WO2004104535A1

WO2004104535A1 - Temperature measuring system and temperature measuring method

Info

Publication number: WO2004104535A1
Application number: PCT/JP2004/007096
Authority: WO
Inventors: Isamu Nakatou
Original assignee: Tokyo Electron Limited
Priority date: 2003-05-26
Filing date: 2004-05-25
Publication date: 2004-12-02
Also published as: TW200507142A; JP2006234382A

Abstract

A temperature measuring system (100) comprises a first temperature measuring body (101) for measuring the temperature of an object to be measured (APM), a second temperature measuring body (102) for measuring the temperature of the object to be measured (APM), and a monitor unit (120) for monitoring respective temperatures measured by the first temperature measuring body (101) and the second temperature measuring body (102). By monitoring the difference between the temperature measured by the first temperature measuring body (101) and the temperature measured by the second temperature measuring body (102) using the monitor unit (120), it can be detected if there is a problem with the first temperature measuring body (101) or the second temperature measuring body (102).

Description

Specification

Temperature measurement system and temperature measurement method

Technical field

The present invention relates to a system for measuring the temperature of a liquid, a gas, or the like for processing a substrate such as a semiconductor wafer or glass for an LCD substrate.

Background art

[0002] For example, in a semiconductor device manufacturing process, a semiconductor wafer (hereinafter, referred to as a "wafer") is washed with a processing solution such as a predetermined chemical solution or pure water to remove particles, organic contaminants, and organic contaminants attached to the wafer surface. A cleaning device for removing contamination such as metal impurities is used. Among them, wet type cleaning equipment, which sequentially immerses wafers in a processing tank filled with a processing liquid to perform cleaning processing, is widely used.

[0003] In a powerful cleaning apparatus, it is preferable that the processing liquid in the processing tank has a predetermined temperature in order to perform a preferable cleaning process. Therefore, during the processing, the processing liquid adjusted to the predetermined temperature is continuously supplied into the processing tank, and the used and used processing liquid overflows from the processing tank to adjust the processing tank to the predetermined temperature. It has been replaced with the treated solution. In addition, a RTD for measuring temperature is placed in the processing solution in the processing bath, and a temperature measurement system equipped with a controller that monitors the temperature measured by the RTD is installed. The temperature of the liquid is controlled based on the temperature measured by the temperature resistor to prevent the temperature of the liquid from dropping or overheating (see, for example, JP-A-2001-296186). . Such a resistance temperature detector is made of a metal material such as platinum (Pt) whose electrical resistance changes with temperature, and the temperature of the processing solution can be detected from the resistance of the resistance temperature detector.

[0004] However, in the conventional temperature measurement system, the failure of the resistance thermometer sometimes could not be determined. For example, failures such as a break in the RTD or a break in the electrical cord that connects the RTD to the controller become evident through monitoring of the controller because it is impossible to detect the temperature. It was difficult to determine the deviation of the resistance value of the resistor. In this case, based on the measured temperature at which the error becomes larger than the actual temperature, The temperature of the processing liquid is controlled, and the processing is performed with a processing liquid at a temperature higher or lower than a desired temperature, which has a problem that the processing accuracy of the wafer is adversely affected. In addition, it was not possible to detect early a defect in the resistance value of the RTD.

[0005] The present invention has been made in view of the above circumstances, and an object of the present invention is to provide a temperature measurement system capable of determining a malfunction of a temperature measuring body.

Disclosure of the invention

[0006] In order to achieve the above object, the invention described in claim 1 is a system for measuring temperature, comprising: a first temperature measuring element for measuring the temperature of an object to be measured; A second temperature measuring element for measuring the temperature of the object to be measured; and a monitoring section for monitoring each temperature measured by the first temperature measuring element and the second temperature measuring element. The unit monitors the difference between the temperature measured by the first temperature sensor and the temperature measured by the second temperature sensor, thereby detecting the first temperature sensor or the second temperature sensor. It is characterized by detecting that there is a defect in the warm body. Here, “thermometer” is a resistance thermometer or a thermocouple. According to this temperature measurement system, it is possible to detect that the error in the measured temperature of either V or deviation has increased. That is, a defect in which the resistance value of one of the resistance temperature detectors has changed can be detected.

[0007] The invention set forth in claim 2 is the output or output of the first temperature measuring element between the first temperature measuring element and the second temperature measuring element and the monitoring unit. An arithmetic unit for calculating a temperature from an output of the second temperature measuring element is provided. The invention according to claim 3 is characterized in that the arithmetic unit includes a first arithmetic unit provided between the first temperature measuring element and the monitoring unit, and the second temperature measuring unit. A second calculation unit provided between the body and the monitoring unit. In this way, if the error in the measured temperature increases due to an error in one of the arithmetic units, the difference between the two measured temperatures is monitored, and there is an error in one of the arithmetic units. The possibility can be determined.

[0008] The invention described in claim 4 is characterized in that the measurement object of the first temperature measuring element and the measurement object of the second temperature measuring element are the same. Further, in the invention set forth in claim 5, the object to be measured is a processing liquid stored in a processing tank for processing a substrate, and is based on a temperature measured by the first temperature measuring element. Temperature control mechanism to adjust the temperature of the processing solution. Features. In this case, by controlling the liquid temperature, it is possible to perform suitable processing with high processing accuracy.

[0009] The invention according to claim 6, wherein the monitoring unit sets a difference between the temperature measured by the first temperature measuring element and the temperature measured by the second temperature measuring element. If the allowable value exceeds the allowable value, it is determined that there is a defect in the first temperature measuring element or the second temperature measuring element.

[0010] In the invention according to claim 7, the monitoring unit recognizes a temperature instability time of the object to be measured, and in the instability time, the temperature is measured by the first temperature measuring element. Even if the difference between the measured temperature and the temperature measured by the second temperature measuring element exceeds a set allowable value, the temperature of the first temperature measuring element or the second temperature measuring element may be reduced. It does not judge that there is a problem.

[0011] The invention described in claim 8 provides a third temperature measuring element for measuring the temperature of the second object to be measured, and a third temperature measuring element for measuring the temperature of the second object to be measured. A fourth temperature measuring element is further provided, the third temperature measuring element is connected to the second calculating section, and the fourth temperature measuring element is connected to another calculating section other than the second calculating section. To the third temperature measuring element or the fourth temperature measuring element by monitoring the difference between the temperature measured by the third temperature measuring element and the temperature measured by the fourth temperature measuring element. It is characterized by detecting that there is a defect in the warm body.

[0012] The invention described in claim 9 is a step of measuring the temperature of the same object to be measured with different temperature measuring bodies, and calculating a difference between respective temperature data measured by the different temperature measuring bodies. The comparing step is characterized in that, if the difference between the respective temperature data exceeds a preset allowable value, it is determined that a malfunction has occurred in any of the different temperature measuring bodies and an alarm is issued.

[0013] The invention according to claim 10 further comprises a step of recognizing a temperature instability time during which the temperature of the object to be measured is unstable. Even if the difference exceeds the allowable value, any of the temperature measuring couples is judged to be defective and no alarm is issued and an alarm is not issued.

[0014] The invention according to claim 11 is characterized in that the object to be measured is a processing liquid for processing an object to be processed in a processing tank. BRIEF DESCRIPTION OF THE FIGURES

FIG. 1 is a perspective view showing an outline of a cleaning system to which the present invention is applied.

FIG. 2 is an explanatory view showing an outline of a wafer cleaning apparatus to which the present invention is applied.

FIG. 3 is an explanatory diagram showing an outline of a temperature measurement system according to the present invention applied to a wafer cleaning apparatus.

FIG. 4 is an explanatory diagram showing an outline of a temperature measurement system according to another embodiment. BEST MODE FOR CARRYING OUT THE INVENTION

Hereinafter, a preferred embodiment of the present invention will be described with reference to FIGS. 1 to 4.

FIG. 1 is a perspective view of a cleaning system 1 including a temperature measuring system according to the present embodiment. This cleaning system 1 is configured to carry out loading of wafers W as substrates in units of carrier C, cleaning of wafers W, drying of wafers W, and unloading of wafers W in units of carriers C. Have been.

In the cleaning system 1, the loading / unloading section 2 carries out operations from loading the carrier C containing 25 wafers W before cleaning to transferring the wafers W to cleaning. That is, the carrier C mounted on the loading stage 5 is transported, for example, two by two to the loader 7 by the transfer device 6, and the loader 7 takes out the wafer W from the carrier C.

The cleaning / drying processing section 10 includes a wafer chuck cleaning / drying apparatus 11 for cleaning and drying the wafer chucks 30a, 30a of the transfer apparatus 30 for transferring the wafer W in order from the loading / unloading section 2 side. Wafer cleaning equipment for cleaning wafer W using various chemicals and cleaning liquids such as pure water 12-19, Wafer chuck cleaning / drying equipment for cleaning and drying wafer chucks 33a and 33a of transfer device 33 20 And a drying device 21 for drying the wafer W cleaned by the wafer cleaning device 12-19 using, for example, isopropyl alcohol (IPA) vapor. Further, on the front side of the washing / drying processing section 10 (on the front side in FIG. 1), transport devices 30, 31, 32, and 33 are provided.

In accordance with a general cleaning process, the wafer cleaning devices 12, 14, 16, and 18 are configured to perform the chemical cleaning so that the chemical cleaning and the rinsing cleaning can be performed alternately. , 19 are configured to perform rinsing. As an example, in the wafer cleaning apparatus 12, an SPM (a mixture of H 2 SO / HO), which is a cleaning liquid mainly containing a sulfuric acid component, is used. PM cleaning is performed to remove impurities such as organic contaminants adhering to the surface of the wafer W. In addition, the wafer cleaning apparatus 14 performs SCI cleaning using APM (a mixed solution of NH OH / HO / HO), which is a cleaning liquid mainly containing an ammonia component, for example.

4 2 2 2

To remove impurities such as organic contaminants and particles adhering to the surface of the substrate. In the wafer cleaning device 16, HPM (HC1 / H O / H

twenty two

SC2 cleaning using a mixture of O and O.

Two

And remove other parts. In addition, the wafer cleaning unit 18 performs DHF cleaning using DHF (a mixture of HFZH〇), which is a cleaning liquid mainly composed of hydrofluoric acid, to form a wafer on the surface of the wafer W.

Two

The removed oxide film and the like are removed. In wafer cleaning units 13, 15, 17, and 19, rinsing of wafer W is performed using pure water. The configuration of the wafer cleaning device 1219 will be described later in detail.

[0021] The above arrangement and the combination of the respective wafer cleaning devices 12-19 are applied to the wafer W.

It can be arbitrarily combined depending on the type of cleaning process to be performed. For example, the number of cleaning devices may be reduced, or conversely, a wafer cleaning device may be provided for cleaning the wafer W with another type of chemical.

The loading / unloading unit 40 loads 25 wafers W cleaned and dried in the cleaning / drying processing unit 10 into the carrier C, and then unloads them in the carrier C unit. That is, the carrier C in which the washed wafer W is stored by the unloader 41 is transported to the unloading section 42 by the transfer device (not shown).

[0023] The configurations of the wafer cleaning apparatuses 12, 14, 16, and 18 for performing chemical cleaning are almost the same as each other except that the cleaning liquid is different. Therefore, a description will be given below using the wafer cleaning apparatus 14 that performs SC1 cleaning as a representative.

As shown in FIG. 2, the wafer cleaning apparatus 14 includes a cleaning tank 45 for storing APM adjusted to a predetermined temperature (for example, 80 ° C.) as a cleaning liquid. The washing tank 45 is composed of a box-shaped inner tank 46 having a size large enough to store the W, and an outer tank 47 formed so as to surround the upper opening of the inner tank 46. .

[0025] In the inner tank 46, a wafer guide 63 for holding the wafer W is provided. Three parallel holding members 63a, 63b, 63c are mounted on the wafer guide 63 in a horizontal posture. The holding members 63a, 63b, and 63c hold 50 wafers W arranged at equal intervals.

[0026] A circulation circuit 65 for circulating APM during cleaning is connected between the inner tank 46 and the outer tank 47. The inlet of the circulation circuit 65 is connected to the bottom of the outer tub 47. In the circulation circuit 65, a pump 67, a damper 68, a heater 69, and a filter 70 are sequentially arranged. The outlet of the circulation circuit 65 is connected to a jet nozzle (not shown) arranged in a pair below the inner tank 46.

[0027] That is, the cleaning liquid overflowing from the inner tank 46 to the outer tank 47 flows into the circulation circuit 65, and is operated by the pump 67 to flow in the order of the damper 68, the heater 69, and the filter 70, thereby adjusting the temperature and cleaning. After that, it is supplied again into the inner tank 46 through the jet nozzle, and the flow is returned. In this way, APM is reused to reduce its consumption. A drain pipe 72 is connected to the circulation circuit 65 via an on-off valve 71 so that the cleaning liquid in the outer tank 47 is drained. A drain pipe 74 is connected to the bottom of the inner tank 46 via an on-off valve 73 so that the cleaning liquid in the inner tank 46 is drained.

Further, the wafer cleaning apparatus 14 is provided with a replenishing mechanism 80 for replenishing the cleaning liquid to the cleaning tank 45. The replenishing mechanism 80 is configured, for example, to first fill the empty cleaning tank 45 with the cleaning liquid, or to appropriately replenish the cleaning tank 45 that has become insufficient.

[0029] The replenishment mechanism 80 includes an ammonia replenishment system 81, a hydrogen peroxide water replenishment system 82, a pure water replenishment system 83, and a controller 84. The ammonia replenishment system 81 is provided with a tank 85 that stores an aqueous ammonia solution (NHOH) adjusted to a predetermined concentration, and a pump 86.

Four

. Hydrogen peroxide water replenishment system 82 stores hydrogen peroxide solution (H 2 O) adjusted to a predetermined concentration.

A storage tank 87 and a pump 88 are provided. The pure water replenishment system 83 is provided with a tank 89 for storing pure water (DIW), a tank heater 90 for heating the pure water in the tank 89, and a valve 91. The controller 84 is configured to control the operation rates of the pumps 86 and 88 and the opening of the valve 91. Under the control of the controller 84, a predetermined amount of each of the aqueous ammonia solution, hydrogen peroxide solution, and pure water is supplied, and APM having a predetermined component ratio is supplied to the cleaning tank 45 as a cleaning liquid.

Next, a temperature measuring system 10 according to the present embodiment for measuring the temperature in the cleaning tank 45 is described. 0 will be described. The temperature measuring system 100 includes a first temperature measuring resistor 101 and a second temperature measuring resistor 102 for measuring the temperature of the cleaning liquid stored in the cleaning tank 45 to be measured. Have. The first resistance temperature detector 101 and the second resistance temperature sensor 102 are provided in the inner tank 46.

[0031] Although not shown, the first resistance temperature detector 101 and the second resistance temperature sensor 102 are formed in a very fine line shape from a metal material such as, for example, platinum (Pt), and have a temperature of APM. The electrical resistance changes with the change. The first and second resistance temperature detectors 101 and 102 are covered with a coating member that protects the first or second resistance temperature detector 101 or 102 from physical impact. Further, they are installed in the inner tank 46 while being inserted into quartz glass tubes (not shown).

[0032] The gas in the quartz glass tube (not shown) immersed in the cleaning liquid has the same temperature as the APM, and depending on the temperature of this gas, the first resistance temperature sensor 101 or the second temperature measurement element The electric resistance value (output) of the resistor 102 changes. Therefore, electricity is passed through the first resistance thermometer 101 or the second resistance thermometer 102, and the electrical resistance value of the first resistance thermometer 101 or the second resistance thermometer 102 is detected. As a result, the temperature of the gas in the quartz glass tube, that is, the temperature of the cleaning liquid, can be measured.

[0033] To the first resistance bulb 101, an electric cord 103 for passing electricity through the first resistance bulb 101 is connected. The electric cord 103 is connected to a temperature controller 105 that performs calculation and control for adjusting the temperature of the cleaning liquid in the cleaning tank 45. On the other hand, an electric cord 106 for passing electricity through the second resistance bulb 102 is connected to the second resistance bulb 102. As shown in FIG. 3, the electric cord 106 is connected to a temperature calculator 108 as a second calculator provided in the wafer cleaning device 15 adjacent to the wafer cleaning device 14. The temperature calculator 108 will be described later.

As shown in FIG. 2, the temperature controller 105 includes a calculation unit (first calculation unit) 111 for calculating the temperature of the cleaning liquid from the electric resistance value as the output of the first resistance temperature detector 101, A heater power adjusting unit 112 for adjusting the output of the heater 69 is provided. The relation between the electric resistance value and the temperature is stored in advance in the computing unit 111, and the electric resistance value of the first resistance temperature detector 101 is detected via the electric cord 103, and the electric resistance value and the temperature are detected. Calculation to calculate the temperature based on the relationship Do. The heater power adjustment unit 112 adjusts the power of the heaters 69 based on the temperature calculated by the calculation unit 111 so that the temperature of the cleaning liquid is maintained at a predetermined value, and controls the heating amount of the heater 69. Is to be controlled. As described above, the first resistance temperature sensor 101, the temperature controller 105, and the heater 69 constitute the temperature adjustment mechanism 113 for adjusting the temperature of the cleaning liquid. The temperature of the cleaning solution is adjusted based on the temperature.

Further, as shown in FIG. 3, the calculation unit 111 of the temperature controller 105 monitors each measured temperature measured by the first resistance temperature detector 101 and the second resistance temperature detector 102. It is connected to a block controller 120 as a monitoring unit. That is, the calculation unit 111 is connected between the first resistance temperature detector 101 and the block controller 120. Then, the temperature calculated by the arithmetic unit 111 is input to the block controller 120 and monitored.

Although not shown, the wafer cleaning apparatus 14 includes a temperature measuring device for measuring the temperature at various places in addition to the first resistance temperature detector 101 and the second resistance temperature detector 102. A resistor or thermocouple is provided. For example, a temperature measuring resistor or thermocouple for measuring the temperature of the drainage is provided in the drain pipe 72 or the drain pipe 74, and the drainage temperature from the inner tank 46 and the drainage from the outer tank 47 are provided. The liquid temperature is measured. A temperature measuring resistor (not shown) for measuring the drainage temperature is supplied to a temperature calculator 125 that calculates the temperature from the electric resistance value as the output of the temperature measuring resistor or the thermoelectromotive force as the output of the thermocouple. It is connected.

[0037] The temperature computing unit 125 is provided with, for example, four connection sections 130 for connecting an electric cord. The electric cord connected to the resistance temperature detector or the like is connected to one of the connection sections 130. Thus, the output of the resistance temperature detector or the like can be input to the temperature calculator 125. That is, it is possible to input the outputs of one to four resistance temperature detectors to the temperature calculator 125, and to calculate the temperature from each output.

[0038] The temperature calculator 125 is connected to a converter 131 that enables the temperature calculator 125 to communicate with other devices. The converter 131 is connected to a controller 133 that monitors each temperature measured by a resistance temperature detector or the like (not shown) for measuring the drainage temperature, and calculates the temperature calculated by the temperature calculator 125. Is input to the controller 133 via the converter 131 and is monitored. The tank heater 90 is connected to a temperature monitor 135 connected to the block controller 120. The temperature monitor 135 displays the temperature of the tank heater 90 and sends the temperature data to the block controller 120. The heating amount of the tank heater 90 is controlled in accordance with a control signal input from the temperature monitor 135 to the block controller 120. If the current temperature detected by the temperature monitor 135 is higher than the set temperature, the block controller 120 switches off the power of the tank heater 90 to lower the temperature to the set temperature. Conversely, if the current temperature is lower than the set temperature, the block controller 120 switches the power supply of the tank heater 90 to 〇N to increase the temperature to the set temperature. That is, the heating amount is adjusted and controlled by the control signal (ON / OFF signal) from the block controller 120 so that the temperature becomes constant.

[0040] The wafer cleaning apparatus 15 provided adjacent to the wafer cleaning apparatus 14 and performing rinsing cleaning of the wafer W using pure water has a cleaning tank 145 having substantially the same configuration as the cleaning tank 45, and the cleaning tank 145 described above. A temperature calculator 108 is provided as a second calculation unit. The temperature calculator 108 has almost the same function as the temperature calculator 125. That is, the temperature calculator 108 calculates the temperature of the cleaning liquid from the electric resistance value (output) of the second resistance temperature detector 102, and further calculates the electric resistance value of two or more resistance temperature It is possible to calculate the temperature from the pair of thermoelectromotive forces.

The temperature calculator 108 is provided with, for example, four connection portions 150 that are substantially the same as the connection portion 130. The electric cord 106 of the above-mentioned wafer cleaning device 14 is connected to one of the connection parts 150. The temperature calculator 108 is connected to the converter 131. That is, the temperature calculated by the temperature calculator 108 is input to the controller 133 via the converter 131 and is monitored.

[0042] Two or more temperature calculators 108 and 125 are connected to the converter 131, and the temperature is calculated from the outputs of eight or more resistance temperature detectors provided in the wafer cleaning devices 14 and 15, respectively. In this way, eight or more temperatures may be monitored by the controller 133.

[0043] Further, the controller 133 and the block controller 120 are connected by an interface circuit 155, so that data can be transmitted from the controller 133 to the block controller 120. That is, between the second resistance bulb 102 and the block controller 120 Are connected to a temperature calculator 108 and a converter 131. Each temperature calculated by the temperature calculator 108 is input to the block controller 120 and monitored.

[0044] The block controller 120 measures the temperature measured by the first resistance temperature detector 101, the temperature measured by the second resistance temperature sensor 102, and the temperature measured by the first resistance temperature sensor 101. The difference between the temperature and the temperature measured by the second resistance bulb 102 is monitored.

The tolerance between the temperature measured by the first resistance temperature detector 101 and the temperature measured by the second resistance temperature detector 102 can be stored in the block controller 120 in advance. The block controller 120 measures the temperature of the cleaning liquid with the first resistance temperature detector 101 when it is necessary to maintain the temperature of the cleaning liquid at a predetermined value before or during immersion of the wafer W in the cleaning tank 45. The difference between the measured temperature and the temperature measured by the second resistance bulb 102 is compared with the set tolerance. Then, when the difference between the measured temperatures becomes larger than the tolerance, one of the first resistance temperature detector 101, the second resistance temperature detector 102, the calculation unit 111, and the temperature calculation unit 108 The system determines that there is a problem and generates an alarm. This prevents the temperature of the cleaning liquid from being controlled based on an incorrect measurement temperature.

That is, when the resistance value of the first resistance temperature sensor 101 or the second resistance temperature sensor 102 is normal, the temperature measured by the first resistance temperature sensor 101 and the second resistance temperature The temperature measured by the resistance temperature detector 102 is substantially the same. However, the resistance value of the first resistance temperature sensor 101 or the second resistance temperature sensor 102 changes, and the temperature measured by the first resistance temperature sensor 101 or the second resistance temperature sensor 102 is changed. When the error increases, the difference between the temperature measured by the first resistance temperature detector 101 and the temperature measured by the second resistance temperature detector 102 increases. That is, the difference between the temperature measured by the first resistance temperature detector 101 and the temperature measured by the second resistance temperature detector 102 is monitored by the block controller 120, so that the first resistance temperature detector 101 or A failure in which the resistance value of the second resistance bulb 102 has changed can be detected.

[0047] Even if the first resistance temperature detector 101 or the second resistance temperature detector 102 is normal, the operation unit An error in the calculation function of the temperature calculator 111 or the temperature calculator 108 may cause a large error in the calculated temperature. In such a case, the temperature measured by the first resistance temperature detector 101 and calculated by the calculation unit 111 and the temperature measured by the second resistance temperature sensor 102 and calculated by the temperature calculator 108 are also used. By comparison, the difference between the two measured temperatures is larger. Therefore, by monitoring the difference between the temperature measured by the first resistance temperature detector 101 and the temperature measured by the second resistance temperature detector 102 by the block controller 120, the calculation unit 111 or the temperature calculation unit 108 It is possible to determine the possibility that there is an abnormality. That is, when the difference between the temperature measured by the first resistance temperature detector 101 and the temperature measured by the second resistance temperature detector 102 becomes large, the first resistance temperature detector 101 and the second resistance temperature detector It is considered that any one of the resistance temperature detector 102, the operation unit 111, and the temperature operation unit 108 has an abnormality.

[0048] In the present embodiment, the temperature measurement system 100 includes a first resistance temperature detector 101, an electric code 103, a temperature controller 105, a block controller 120, a second resistance temperature sensor 102, an electric code 106, a temperature calculator 108, a converter 131, a controller 133, and an interface circuit 155.

[0049] The configuration of the wafer cleaning devices 12, 16, and 18 for performing chemical cleaning has almost the same configuration as the wafer cleaning device 14, except that the type of liquid supplied in the replenishment mechanism 80 is different. The configuration of the wafer cleaning devices 13, 17, and 19 for rinsing the wafer W using pure water has almost the same configuration as the wafer cleaning device 15. In addition, the wafer cleaning devices 12 and 13, the wafer cleaning devices 16 and 17, and the wafer cleaning devices 18 and 19 are each provided with a temperature measurement system 100 as appropriate.

The block controllers 120 provided in the wafer cleaning devices 12 and 13, the wafer cleaning devices 16 and 17, and the wafer cleaning devices 18 and 19 are connected to the main controller 160. The main controller 160 transmits data relating to the process of processing to each block controller 120.

Next, processing using the cleaning system 1 configured as described above will be described. First, before the processing of the wafer W in the cleaning system 1 is started, each of the wafer cleaning apparatuses 12 to 19 is filled with the cleaning liquid. Since the filling of the cleaning solution in each of the wafer cleaning apparatuses 12, 14, 16, and 18 is performed in substantially the same procedure, the filling of the wafer cleaning apparatus 14 is typically performed. Will be described.

Before supplying the cleaning liquid to the cleaning tank 45, the tolerance of the measured temperature is input to the block controller 120 and stored in advance. In the wafer cleaning apparatus 14, a predetermined amount of an aqueous ammonia solution, hydrogen peroxide solution, and pure water are supplied to the outer tank 47 of the empty cleaning tank 45 under the control of the controller 84, and a predetermined component ratio is obtained. Supply cleaning solution. The cleaning liquid supplied to the outer tank 47 passes through the circulation circuit 65 and is discharged into the inner tank 46 from a jet nozzle (not shown) disposed below the inner tank 46. The washing tank 45 overflows the upper part of the inner tank 46, is received by the outer tank 47, and flows from the outer tank 47 into the circulation circuit 65 again. Thus, the cleaning liquid is circulated in the order of the outer tank 47, the circulation circuit 65, and the inner tank 46, and the cleaning tank 45 is filled with the cleaning liquid.

When the cleaning liquid is stored in the inner tank 46, the first resistance temperature detector 101 and the second resistance temperature detector 102 are immersed in the cleaning liquid, and the temperature of the cleaning liquid can be measured. When the cleaning liquid is filled in the cleaning tank 45, the heater 69 is heated while the cleaning liquid is circulated in the order of the outer tank 47, the circulation circuit 65, and the inner tank 46, and the cleaning liquid passing through the circulation circuit 65 is heated. The electric resistance value of the first resistance temperature sensor 101 and the second resistance temperature sensor 102 changes according to the temperature of the cleaning liquid. The magnitude of the current flowing through the electric cords 103 and 106 and the voltage are the temperature of the cleaning liquid. Varies according to The temperature controller 105 adjusts the heating amount of the heater 69 while calculating the temperature from the electric resistance value of the first resistance temperature detector 101, and controls the temperature to rise to a predetermined value. In this way, a predetermined amount of the cleaning liquid at a predetermined temperature is filled in the cleaning tank 45. After the cleaning bath 45 is filled with a predetermined amount and a predetermined temperature of the cleaning liquid, the temperature controller 105 calculates the temperature from the electric resistance value of the first temperature-measuring resistor 101 while controlling the heating amount of the heater 69. Adjust the temperature so that the temperature is maintained at the specified value.

The temperature controller 105 transmits the calculated temperature to the block controller 120 while controlling the temperature of the cleaning liquid. The temperature transmitted to the block controller 120 is monitored by the block controller 120. Further, the temperature calculator 108 of the wafer cleaning apparatus 15 calculates the temperature from the electric resistance value of the second resistance temperature detector 102, and the calculated temperature is transmitted to the controller 133 via the converter 131. , Transmitted from the controller 133 to the block controller 120 and monitored by the block controller 120. After raising the temperature of the cleaning liquid in the cleaning tank 45 to a predetermined temperature based on the temperature measured by the first resistance temperature detector 101, the block controller 120 receives the input from the temperature controller 105. The temperature measured by the first resistance temperature detector 101 is compared with the temperature measured by the second resistance temperature sensor 102 input from the controller 133, and the difference between the measured temperatures is calculated according to the set tolerance. If it gets bigger, an alarm should be generated.

That is, while the cleaning liquid is filled in the cleaning tank 45 or the temperature of the cleaning liquid is not uniform, the first temperature measuring resistor 101 and the second temperature measuring resistor 102 are not uniform. Even if the calculation unit 111 and the temperature calculator 108 are normal, the difference between the temperature measured by the first RTD 101 and the temperature measured by the second RTD 102 is set. May be larger than the tolerance. On the other hand, if the difference between the temperature measured by the first RTD 101 and the temperature measured by the second RTD 102 increases while maintaining the cleaning solution at a predetermined temperature, There is a possibility that the electric resistance value of the first resistance bulb 101 or the second resistance bulb 102 has changed. Although the electrical resistance of the first resistance temperature detector 101 and the electrical resistance of the second resistance temperature detector 102 are normal, there is a possibility that the arithmetic unit 111 or the temperature calculator 108 has an abnormal force S. . When the error in the temperature calculated by the arithmetic unit 111 becomes large, the temperature controller 105 adjusts the heating amount of the heater 69 based on the measured temperature having a large error, and the actual temperature of the cleaning liquid also becomes a predetermined value. Value power will be greatly shifted. If the wafer W is immersed in the cleaning liquid in this state, the processing accuracy will be adversely affected, such as a decrease in processing accuracy. To prevent such adverse effects, an alarm is generated when the difference between the temperature measured by the first RTD 101 and the temperature measured by the second RTD 102 becomes larger than the tolerance. Therefore, the processing of the wafer W is not started.

[0057] When the alarm is generated, the worker checks the first resistance temperature sensor 101 and the second resistance temperature sensor 102 and checks the first resistance temperature sensor 101 or the second resistance temperature sensor 102. Try to replace body 102 with a new one. In addition, the arithmetic unit 111 and the temperature arithmetic unit 108 are checked, and if there is any abnormality, the arithmetic unit 111 or the temperature arithmetic unit 108 is repaired. After inspection, replacement, restoration, etc., the cleaning liquid is filled into the cleaning tank 45, the temperature of the cleaning liquid is adjusted, and the processing of the wafer W is started. This makes it possible to obtain a highly reliable measurement temperature with little error. Furthermore, the temperature of the cleaning solution can be accurately controlled based on the measurement temperature with little error, and the processing accuracy can be improved. And a suitable process can be performed.

The filling of pure water in each of the wafer cleaning apparatuses 13, 15, 17, and 19 is almost the same as the filling of the wafer cleaning apparatus 14, except that the pure water does not need to be heated to a predetermined temperature.

[0059] As described above, in the cleaning system 1 in which the cleaning liquid is filled in each of the wafer cleaning apparatuses 12 to 19, the transfer robot is still cleaned, the wafer is not cleaned, and the wafer W is not cleaned. For example, a plurality of carriers C each containing 25 pieces are loaded on the loading stage 5 of the loading / unloading section 2. Then, the loading / unloading unit 2 takes out, for example, 50 wafers W for two carriers C from the carrier C, and the transfer device 30 collectively holds the wafers W in units of 50 wafers. Then, the wafer W is immersed in the cleaning tank 45 of the wafer cleaning device 12 by the transfer device 30, and SPM cleaning is performed for a predetermined time. After that, the wafer W is pulled up from the cleaning tank 45 of the wafer cleaning device 12 by the transfer device 30 and is immersed in the cleaning tank 145 of the wafer cleaning device 13 for rinsing. Next, the wafer W is lifted from the cleaning tank 145 of the wafer cleaning device 13 by the transfer device 31, and the wafer W is immersed in the cleaning tank 45 of the wafer cleaning device 14 by the transfer device 31, and APM cleaning for a predetermined time is performed. Do. After that, the wafer W is pulled up from the cleaning tank 45 of the wafer cleaning apparatus 14 by the transfer apparatus 31 and is immersed in the cleaning tank 145 of the wafer cleaning apparatus 15 for rinsing. Next, the wafer W is lifted from the cleaning tank 145 of the wafer cleaning device 15 by the transfer device 32, and the wafer W is immersed in the cleaning tank 45 of the wafer cleaning device 16 by the transfer device 32, and SC2 cleaning is performed for a predetermined time. . After that, the wafer W is pulled up from the cleaning tank 45 of the wafer cleaning device 16 by the transfer device 32, and is immersed in the cleaning tank 145 of the wafer cleaning device 17 for rinsing. Next, the wafer W is lifted from the cleaning tank 145 of the wafer cleaning device 17 by the transfer device 33, and the wafer W is immersed in the cleaning tank 45 of the wafer cleaning device 18 by the transfer device 33, and DHF cleaning for a predetermined time is performed. Do. After that, the wafer W is lifted from the cleaning tank 45 of the wafer cleaning device 18 by the transfer device 33, and is immersed in the cleaning tank 145 of the wafer cleaning device 19 for rinsing. Thus, cleaning is performed to remove impurities such as particles adhering to the surface of W.

Here, the processing of the wafer cleaning apparatus 14 will be described. Cleaning tank by transfer device 31

The wafer W is lowered into 45, and the wafer W is transferred from the transfer device 31 to the wafer guide 48. When lowering the wafer W into the cleaning solution, the temperature of the cleaning solution is likely to be unstable. , Even if the first RTD 101, the second RTD 102, the operation unit 111, and the temperature calculator 108 are normal, the temperature measured by the first RTD 101 and the second The temperature difference measured by the resistance temperature detector 102 may change. Therefore, even if the difference between the temperature measured by the first resistance temperature detector 101 and the temperature measured by the second resistance temperature detector 102 is larger than the set tolerance, an alarm is not generated. I do.

[0061] During the cleaning, the temperature of the cleaning liquid is adjusted and purified by circulating the cleaning liquid in the cleaning tank 45 by the circulation circuit 65, and the cleaning liquid is always adjusted to a predetermined temperature in the cleaning tank 45 by the cleaned cleaning liquid. Fill.

[0062] During the cleaning of the wafer W, the block controller 120 controls the temperature measured by the first resistance temperature detector 101 and input from the temperature controller 105, and the temperature measured by the second resistance temperature detector 102 and the controller. The temperature input from 133 is compared, and if the measured temperature difference exceeds the set tolerance, an alarm is generated.

That is, when the difference between the temperature measured by the first resistance thermometer 101 and the temperature measured by the second resistance thermometer 102 increases, the first resistance thermometer 101 Alternatively, the electric resistance value of the second resistance temperature detector 102 may have changed. Although the electrical resistance of the first resistance temperature detector 101 and the electrical resistance of the second resistance temperature detector 102 are normal, there is a possibility that the arithmetic unit 111 or the temperature arithmetic unit 108 is abnormal. . If the error of the measurement temperature by the first resistance temperature detector 101 becomes large, the temperature controller 105 adjusts the heating amount of the heater 69 based on the measurement temperature with a large error, and the actual temperature of the cleaning liquid is adjusted. Also greatly deviates from the predetermined value. If the wafer W is processed in this state, the processing accuracy will be adversely affected, such as a decrease in processing accuracy. To prevent such adverse effects, if the difference between the temperature measured by the first RTD 101 and the temperature measured by the second RTD 102 becomes larger than the tolerance, an alarm is issued. Generate and stop processing.

When an alarm occurs, the wafer W is pulled up from the cleaning tank 45. The worker should check the first and second RTDs 101 and 102 and replace the first or second RTD 102 or 102 with a new one. To In addition, the arithmetic unit 111 and the temperature arithmetic unit 108 are checked, and if there is any abnormality, the arithmetic unit 111 or the temperature arithmetic unit 108 is repaired. After the inspection, replacement, repair, etc. are performed in this manner, the processing of the wafer W is restarted. This As a result, it is possible to obtain a highly reliable measurement temperature with few errors. Furthermore, the temperature of the cleaning solution can be accurately controlled based on the measurement temperature with few errors, and high processing accuracy and suitable processing can be performed.

When a predetermined time has elapsed without generating an alarm, the wafer W is lifted by the transfer device 31 inside the cleaning tank 45. Then, the wafer W subjected to the APM processing in the wafer cleaning device 14 is transferred to the wafer cleaning device 15. When raising the wafer W from the cleaning solution, the temperature of the cleaning solution is likely to be unstable, so that the first RTD 101, the second RTD 102, the operation unit 111, and the temperature calculator 108 are normal. However, if the difference between the temperature measured by the first resistance temperature detector 101 and the temperature measured by the second resistance temperature detector 102 changes, there is a force S. Therefore, even if the difference between the temperature measured by the first resistance temperature detector 101 and the temperature measured by the second resistance temperature detector 102 is larger than the set tolerance, an alarm is not generated. I do.

When the wafer W is pulled up from the cleaning tank 45, the cleaning liquid in the cleaning tank 45 gradually decreases because the cleaning liquid adheres to the wafer W. When the cleaning liquid decreases, the cleaning liquid is replenished from the replenishing mechanism 80 into the cleaning tank 45 while the replenishing mechanism 80 is controlled by the controller 84. At this time, the cleaning liquid supplied from the replenishing mechanism 80 is supplied in a state where the temperature is controlled by the tank heater 90. However, since the temperature of the cleaning liquid in the cleaning tank 45 tends to be unstable, the first temperature measuring resistance is used. The temperature measured by the first resistance temperature detector 101 and the second resistance temperature detector 102 are maintained even when the body 101, the second resistance temperature detector 102, the calculation unit 111, and the temperature calculator 108 are normal. Therefore, the difference between the measured temperatures may change. Therefore, even if the difference between the temperature measured by the first RTD 101 and the temperature measured by the second RTD 102 becomes larger than the set tolerance, an alarm is not generated. Is preferable.

[0067] The processing in each of the wafer cleaning apparatuses 12, 14, 16, and 18 is performed by using a cleaning liquid and processing time.

, Except that the processing temperature is different.

[0068] The wafer W from which impurities have been removed by the wafer cleaning device 12-19 is transferred to the drying device 21 by the transfer device 33 and subjected to a drying process. Thereafter, the wafer W is transferred to the loading / unloading section 40, the wafer W is stored in the carrier C, and is unloaded from the cleaning system 1.

[0069] According to the force and Karuru temperature measurement system 100, the temperature was measured by the first resistance temperature detector 101. By monitoring the difference between the temperature and the temperature measured by the second resistance temperature detector 102 by the block controller 120, the electric resistance value of the first resistance temperature sensor 101 or the second resistance temperature sensor 102 is monitored. Can be detected at an early stage when there is a change in the electrical resistance value of the device, or at an early stage when there is an abnormality in the function of the arithmetic unit 111 or the temperature arithmetic unit 108. This can prevent the temperature of the cleaning liquid from deviating from a predetermined value and prevent the processing accuracy of the wafer W from deteriorating. Therefore, it is possible to improve the reliability of temperature measurement and perform suitable processing with high processing accuracy.

[0070] Although an example of the preferred embodiment of the present invention has been described above, the present invention is not limited to the mode described here. For example, the measurement object is a cleaning liquid for processing a substrate, but is not limited to such a liquid. For example, a liquid or gas other than the cleaning liquid for processing a substrate may be used. Although the first and second resistance temperature detectors 101 and 102 are resistance temperature detectors, they may be thermocouples. The substrate is not limited to a semiconductor wafer, but may be other glass for LCD substrates, a CD substrate, a printed substrate, a ceramic substrate, or the like.

[0071] In the present embodiment, wafer cleaning apparatuses 12, 14, 16, and 18 have been described as including cleaning tanks for performing chemical solution treatment. More than one type of chemicals and pure water are alternately supplied and drained into one washing tank for each treatment, and multiple washing treatments are performed in a single tank. You may use a washing tank of the type. The wafer cleaning units 13, 15, 17, and 19 have been described as including cleaning tanks that perform rinsing using pure water. However, the wafer cleaning units 13, 15, 17, and 19 perform cleaning that performs chemical treatment. Tank I or a POU washing tank may be used.

In the present embodiment, the temperature measured by first resistance temperature detector 101 is calculated by operation unit 111 built in temperature controller 105, and is measured by second resistance temperature sensor 102. The temperature is calculated by the temperature calculator 108, but is not limited to the force and the form. Further, the liquid temperature of the cleaning liquid may not be controlled, and only the liquid temperature may be monitored. For example, by connecting the electric cord 106 to a temperature calculator 125 provided in the wafer cleaning apparatus 14, the temperature measured by the second resistance temperature detector 102 may be calculated by the temperature calculator 125. good. In addition, the temperature measured by the second resistance bulb 102 is measured by a temperature calculator provided in the wafer cleaning devices 12, 13, 16-19 other than the wafer cleaning device 15. The configuration may be such that the calculation is performed by 108 or the temperature calculator 125.

[0073] Also, the electric cord 103 is connected to the temperature calculator 108 or the temperature calculator 125, and the temperature calculator 108 or the temperature calculator 125 or the like is connected to the temperature controller 105 and to the first resistance temperature detector 101. Therefore, the liquid temperature may be controlled by transmitting the measured temperature or the temperature measured by the second resistance bulb 102.

[0074] Further, for example, when the cleaning tank 45 is a P 槽 U cleaning tank, the temperature is not adjusted by the temperature controller 105, so the temperature controller 105 is not provided, and the electric code 103 is connected to the temperature calculator 125. It is preferable that the temperature is measured by the first RTD 101 and the temperature calculator 125 is used to calculate the temperature. That is, the temperature measured by the first resistance temperature detector 101 and calculated by the temperature calculator 125 is input from the controller 133 to the block controller 120 and monitored. In addition, the first RTD 101 and the second RTD 102 are both connected to a temperature calculator 125, and the temperature measured by the first RTD 101 and the second RTD are measured. The temperature measured by the body 102 may be calculated by the temperature calculator 125, and the block controller 120 may monitor the difference between the measured temperatures. In the case of a POU cleaning tank, monitoring and alarm generation by the block controller 120 may be performed only when water is supplied.

As shown in FIG. 4, in the cleaning tank 145 of the wafer cleaning apparatus 15, a third resistance temperature detector 161 having pure water in the cleaning tank 145 as a second measurement target, and a fourth temperature measuring element A resistor 162 may be provided. Further, the difference between the temperature measured by the third resistance temperature detector 161 and the temperature measured by the fourth resistance temperature detector 162 may be monitored. In this case, it is possible to detect that there is a defect in the third resistance bulb 161 or the fourth resistance bulb 162. For example, an electric cord 163 is connected to the third resistance bulb 161, and the electric cord 163 is connected to one of the connection parts 150 of the temperature calculator 108. The electric cord 164 is connected to the fourth resistance temperature detector 162, and the electric cord 164 is connected to one of the connection parts 130 of the temperature calculator 125. Thus, the third resistance temperature detector 161 is connected to the temperature calculator 108, and the fourth resistance temperature detector 162 is connected to a calculation unit other than the temperature calculator 108 (temperature calculator 125). Note that the third resistance temperature sensor 161 and the fourth resistance temperature sensor 162 have substantially the same configuration as the first resistance temperature sensor 101 and the second resistance temperature sensor 102. The temperature measured by the third resistance thermometer 161 The temperature calculated by the degree calculator 108 is input from the controller 133 to the block controller 120 via the converter 131 and monitored. The temperature measured by the fourth resistance temperature detector 162 and calculated by the temperature calculator 125 is input from the controller 133 to the block controller 120 via the converter 131 and monitored. Then, the difference between the temperature measured by the third resistance temperature detector 161 and the temperature measured by the fourth resistance temperature detector 162 is monitored by the block controller 120. In this case, it is possible to detect that there is a failure in the third resistance temperature detector 161, the fourth resistance temperature detector 162, the temperature calculator 108, or the temperature calculator 125.

In the present embodiment, the temperature calculators 108 and 125 are configured to be able to calculate each temperature from the electric resistance values of a plurality of resistance temperature detectors and the thermoelectromotive force of a thermocouple. The invention is not limited to the equipment, and may be one that calculates only the temperature measured by the second resistance bulb 102.

According to the present invention, by monitoring the difference between the temperature measured by the first temperature measuring element and the temperature measured by the second temperature measuring element, the first temperature measuring element or the second temperature measuring element can be monitored. It can detect that there is a failure in the temperature measuring element 2 or that there is an abnormality in the function of the calculation unit that calculates the temperature from the output of the temperature measuring element. Therefore, the reliability of the temperature measurement can be improved. Also, when controlling the temperature of the measurement target, it is possible to prevent the temperature of the measurement target from deviating from a predetermined value.

Claims

The scope of the claims

[1] A temperature measuring system,

A first temperature measuring element for measuring the temperature of the measuring object;

A second temperature measuring element for measuring the temperature of the measuring object;

A monitoring unit that monitors each temperature measured by the first temperature measuring element and the second temperature measuring element;

The monitoring section monitors the difference between the temperature measured by the first temperature measuring element and the temperature measured by the second temperature measuring element, thereby detecting the first temperature measuring element or the second temperature measuring element. A temperature measurement system that detects a defect in a temperature measuring element.

[2] A temperature is calculated between the output of the first temperature measuring element or the output of the second temperature measuring element between the first temperature measuring element, the second temperature measuring element, and the monitoring unit. 2. The temperature measurement system according to claim 1, wherein a calculation unit for performing the measurement is provided.

[3] The arithmetic unit includes a first arithmetic unit provided between the first temperature measuring element and the monitoring unit, and a first arithmetic unit provided between the second temperature measuring element and the monitoring unit. 3. The temperature measurement system according to claim 2, wherein the temperature measurement system has two operation units.

[4] The method according to any one of claims 1 to 3, wherein the measurement object of the first temperature measuring element and the measurement object of the second temperature measuring element are the same. Temperature measurement system.

[5] The object to be measured is a processing liquid stored in a processing tank for processing a substrate,

The power supply according to any one of claims 1 to 4, further comprising a temperature adjusting mechanism for adjusting the temperature of the processing liquid based on the temperature measured by the first temperature measuring element. The indicated temperature measurement system.

[6] The monitoring unit, when the difference between the temperature measured by the first temperature measuring element and the temperature measured by the second temperature measuring element exceeds a set allowable value, The temperature measuring system according to any one of claims 1 to 5, wherein it is determined that there is a defect in the temperature measuring element or the second temperature measuring element.

[7] The monitoring unit recognizes the temperature instability time of the object to be measured, and at this instability time, the temperature measured by the first temperature measuring element and the temperature measured by the second temperature measuring element. Even if the difference from the measured temperature exceeds the set tolerance, the first temperature sensor or 7. The temperature measuring system according to claim 6, wherein it is not determined that there is a defect in the second temperature measuring body.

[8] a third temperature measuring element for measuring the temperature of the second measuring object;

A fourth temperature measuring element for measuring the temperature of the second object to be measured, wherein the third temperature measuring element is connected to the second calculating section;

Connecting the fourth temperature measuring element to another operation unit other than the second operation unit,

By monitoring the difference between the temperature measured by the third temperature measuring element and the temperature measured by the fourth temperature measuring element, a fault in the third temperature measuring element or the fourth temperature measuring element is detected. The temperature measurement system according to any one of claims 1 to 7, wherein the temperature measurement system detects the presence of a temperature.

[9] a step of measuring the temperature of the same object with different temperature measuring elements,

Comparing the difference between the respective temperature data measured by the different temperature sensors; and if the difference between the respective temperature data exceeds a preset allowable value, one of the different temperature sensors. A temperature measurement method characterized by determining that a failure has occurred in a vehicle and issuing an alarm.

[10] The method further includes a step of recognizing a temperature instability time during which the temperature of the measurement object is unstable, wherein the temperature data difference exceeds the allowable value during the temperature instability time. 10. The temperature measuring method according to claim 9, wherein it is determined that no malfunction has occurred in any of the temperature measuring bodies and no alarm is issued.

11. The temperature measuring method according to claim 9, wherein the object to be measured is a processing liquid for processing an object to be processed in a processing tank.