KR20100048403A - Apparatus for sensing flowmeter, and substrate treating apparatus with it and method for controlling alarm - Google Patents

Apparatus for sensing flowmeter, and substrate treating apparatus with it and method for controlling alarm Download PDF

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Publication number
KR20100048403A
KR20100048403A KR1020080107533A KR20080107533A KR20100048403A KR 20100048403 A KR20100048403 A KR 20100048403A KR 1020080107533 A KR1020080107533 A KR 1020080107533A KR 20080107533 A KR20080107533 A KR 20080107533A KR 20100048403 A KR20100048403 A KR 20100048403A
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KR
South Korea
Prior art keywords
flow rate
alarm
chemical liquid
nozzle
real time
Prior art date
Application number
KR1020080107533A
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Korean (ko)
Inventor
김진섭
박춘희
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세메스 주식회사
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Priority to KR1020080107533A priority Critical patent/KR20100048403A/en
Publication of KR20100048403A publication Critical patent/KR20100048403A/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67253—Process monitoring, e.g. flow or thickness monitoring

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Cleaning Or Drying Semiconductors (AREA)

Abstract

PURPOSE: A flow meter, an apparatus for processing a substrate including the same and a method for controlling the alarm of the same are provided to immediately respond to a process trouble by monitoring the flow rate of a chemical. CONSTITUTION: A supply line(104) supplies a chemical. A flow meter(108) measures the flow rate of the chemical in real time. A control unit(120) monitors the measures flow rate from the flow meter. The control unit is set to generate alarm in case of the abnormality of the measured flow rate. A flow rate control unit(106) is installed in the supply line in order to control the flow rate of a chemical.

Description

FIELD OF SENSING FLOWMETER AND AND SUBSTRATE TREATING APPARATUS WITH IT AND METHOD FOR CONTROLLING ALARM

The present invention relates to a flow rate sensing device, and more particularly to a flow rate sensing device for detecting the discharge flow rate in real time.

The present invention also relates to a substrate processing apparatus having a flow rate sensing device for detecting a discharge flow rate in real time and an alarm control method thereof.

In general, semiconductor manufacturing apparatus are manufactured by repetitive performance of unit processes such as deposition, photolithography, etching, chemical mechanical polishing, cleaning, drying, and the like. Among these unit processes, a cleaning and drying process is a process of removing foreign matter or unnecessary film remaining on the surface of the semiconductor substrate during each unit process.

Substrate processing apparatuses that perform the cleaning and drying processes are classified into a batch type cleaning apparatus for simultaneously cleaning a plurality of substrates and a sheet type cleaning apparatus for cleaning substrates in sheets. Among them, the single wafer cleaning apparatus includes a chuck for supporting the sheet of substrate and at least one nozzle for supplying the treatment chemicals to the substrate processing surface. When the process of the single wafer cleaning apparatus is started, the substrate is placed on the chuck and the nozzle is sequentially sprayed with the cleaning liquid, the rinse liquid and the drying gas to clean and dry the substrate.

A substrate processing apparatus for processing a substrate cleaning process supplies various chemical liquids and gases to a substrate using a nozzle. At this time, the substrate processing apparatus includes a flow rate sensing device for monitoring the flow rate of the chemical liquid supplied from the nozzle.

Generally, the cleaning process consists of a plurality of process steps such as cleaning, rinsing and drying.

For example, referring to FIG. 1, the cleaning process 10 includes first to third process steps 12 to 16, and the first process step 12 is pure water (DIW) for a process time of 20 seconds. To clean the substrate, the second process step 14 to dry the cleaned substrate using a dry gas or the like during the process time 10 seconds, and the third process step 16 to proceed to the subsequent process Wait for 1 second for a time. At this time, the chemical liquid is not used in the second and third process steps 14 and 16.

Referring to FIG. 2, when the first process step 12 is started in step S20, the substrate processing apparatus for processing the cleaning process 10 uses a nozzle for a process time (20 seconds) in step S22 to chemically process the substrate. Discharge. In step S24, it is determined whether the first process step 12 is completed.

When the first process step is completed, in step S26, since the substrate processing apparatus presets a flow rate alarm corresponding to an upper and lower limit level based on the average of the flow rates, the flow rate sensing apparatus performs the first process as shown in FIG. 3. The average of the flow rates is calculated until the time point 40 at which the step 12 is completed.

The average of the flow rates calculated in step S28 is used to determine whether an abnormality has occurred in the discharge flow rates. As a result of the determination, if an abnormality occurs in the discharge flow rate, the flow advances to step S32 to generate a warning and an alarm corresponding to the set level. If no abnormality occurs in the discharge flow rate, the second and third process steps 14 and 16 are sequentially performed in step S30.

As described above, when the chemical liquid is supplied, the chemical liquid is measured, and a supply flow rate of the chemical liquid is measured and an average of the flow rates of the chemical liquid supplied at each time point of the process step is generated to generate a warning and an alarm. However, the flow rate sensing device controls the alarm using the average of the flow rate after the process step is completed, and thus, as shown in FIG. 3, the flow rate sensing device does not detect the section 42 where an abnormality actually occurs during the supply of the chemical liquid. There is a problem.

As a result, accurate flow rate detection is not a cause of process accidents, and follow-up is possible, which can damage the substrate. In addition, since the abnormality of the discharge flow rate is sensed at the time point 40 at which the first process step is completed, the time required to proceed to the subsequent process step is wasted. In addition, since the alarm is controlled by the average of the flow rate, it is impossible to immediately detect even the section 44 in which the chemical liquid is not discharged.

An object of the present invention is to provide a flow rate sensing device for detecting the flow rate of the chemical liquid in real time.

Another object of the present invention is to provide a substrate processing apparatus having a flow rate sensing device for controlling the alarm by sensing the flow rate of the chemical liquid in real time and an alarm control method thereof.

Still another object of the present invention is to provide a substrate processing apparatus and a method for preventing damage to a substrate by sensing the flow rate of the chemical liquid in real time.

In order to achieve the above objects, the flow rate sensing device of the present invention is characterized by monitoring the flow rate of the chemical liquid supplied in real time. In this way, the flow sensor can immediately take action when a flow rate error occurs.

The flow rate sensing device of the present invention comprises: a supply line for supplying a chemical liquid; A flow rate measuring unit for measuring the flow rate of the supplied chemical liquid in real time; And setting information to generate an alarm when an abnormality in flow rate occurs, and receiving and monitoring the flow rate measured by the flow rate measuring unit in real time, and as a result of monitoring, if the measured flow rate is an alarm occurrence condition It includes a control unit for generating an alarm to the outside.

In one embodiment, the flow rate sensing device; It further includes a flow rate adjusting unit for adjusting the flow rate of the chemical solution is installed in the supply line supplied. Here, the control unit controls the flow rate adjusting unit to adjust the supply flow rate of the chemical liquid.

In another embodiment, the setting information includes a time interval for measuring the flow rate of the chemical liquid from the flow rate measuring unit in real time.

In another embodiment, the setting information includes a flow rate value for the upper limit alarm, the lower limit alarm, the upper and lower warning and the lower limit warning according to the flow rate of the chemical liquid. Here, the alarm generation condition corresponds to any one of the measured flow rate is the upper limit alarm, the lower limit alarm, the upper and lower warning and the lower limit warning.

According to another characteristic of this invention, the substrate processing apparatus which measures the discharge flow volume of a chemical liquid in real time is provided. The substrate processing apparatus includes at least one chamber for processing a substrate; At least one nozzle for discharging the chemical liquid to the substrate introduced into the chamber; A chemical liquid supply source supplying the chemical liquid to the nozzle; And a flow rate sensing device provided between the chemical liquid supply source and the nozzle to measure the discharge flow rate of the nozzle in real time, and immediately generate an alarm when an abnormality occurs in the discharge flow rate.

In one embodiment, the flow rate sensing device; A supply line connecting the chemical liquid supply source and the nozzle to supply the chemical liquid to the nozzle; A flow rate measuring unit measuring the discharge flow rate in real time; And setting information to generate an alarm when an abnormality occurs in the discharge flow rate, receiving and monitoring the discharge flow rate measured from the flow rate measuring unit in real time, and if the measured discharge flow rate is an alarm occurrence condition set in the setting information. It includes a control unit for generating an alarm to the outside.

In another embodiment, the flow rate sensing device sets and stores the setting information in the control unit for each chamber and for each nozzle.

In another embodiment, the setting information; A time interval for measuring the flow rate of the chemical liquid from the flow rate measuring unit in real time; It includes flow rate values for the upper limit alarm, the lower limit alarm, the upper and lower warning and the lower limit warning according to the discharge flow rate of the chemical liquid.

According to still another feature of the present invention, an alarm control method of a substrate processing apparatus is provided. Such a method of the present invention sets an alarm generating condition of at least one nozzle for discharging the chemical liquid into at least one chamber for each chamber and for each nozzle. The discharge flow rate of the nozzle is measured in real time. Subsequently, an alarm is generated if the measured discharge flow rate is the alarm generation condition.

In one embodiment, the setting is; A time interval for measuring the discharge flow rate for each chamber and an alarm generation flow rate value of the discharge flow rate are set for each nozzle.

As described above, the flow rate sensing apparatus of the present invention measures the flow rate in real time according to the setting information.

In addition, the flow rate detection device of the present invention measures the flow rate of the chemical liquid supplied in real time, when the flow rate is abnormal, it is possible to take immediate action.

In addition, the substrate processing apparatus of the present invention can prevent damage to the substrate by measuring and monitoring the flow rate of the chemical liquid in real time.

In addition, the substrate processing apparatus of the present invention measures and monitors the flow rate of the chemical liquid in real time, so that when the flow rate is abnormal, immediate action can be prevented to prevent process accidents.

The embodiments of the present invention may be modified in various forms, and the scope of the present invention should not be interpreted as being limited by the embodiments described below. This embodiment is provided to more completely explain the present invention to those skilled in the art. Therefore, the shapes and the like of the components in the drawings are exaggerated in order to emphasize a clearer explanation.

Hereinafter, embodiments of the present invention will be described in detail with reference to FIGS. 4 to 8.

4 is a diagram illustrating a configuration of a substrate processing apparatus according to the present invention.

Referring to FIG. 4, the substrate processing apparatus 100 is, for example, a sheet type cleaning apparatus for processing a cleaning process, and includes a chemical liquid supply source 102 for supplying a chemical liquid, and a substrate processing unit for receiving a chemical liquid from the chemical liquid supply source and processing the substrate. 130 and a flow rate detection device 110 for controlling the alarm by detecting the flow rate of the supplied chemical liquid in real time.

The substrate processor 130 includes at least one chamber 134, a support member 136 for supporting a substrate in the chamber 134, a drive member 138 for vertically moving and rotating the support member 136, and At least one nozzle 132 receives the chemical liquid from the chemical liquid supply unit 102 and discharges the chemical liquid to the substrate seated on the support member 136.

The flow rate sensing device 110 is installed in the supply line 104 and the supply line 104 to connect the chemical liquid supply unit 102 and the nozzle 132 to supply the chemical liquid from the chemical liquid supply unit 102 to the nozzle 132. The flow rate adjusting unit 106 for adjusting the supply flow rate of the chemical liquid, the flow rate measuring unit 108 for measuring the flow rate of the supplied chemical liquid in real time, and controlling the flow rate adjusting unit 106 in response to the process to supply the chemical liquid. Control unit 120 for adjusting the flow rate, receiving the flow rate information measured from the flow rate measuring unit 108 in real time to control the alarm.

As illustrated in FIGS. 7 and 8, the controller 120 includes setting information 200 and 210 for setting alarms by the chamber star 202 and the nozzle star 220. To this end, the control unit 120 includes a user interface (not shown) such as a MMI (Man Machine Interface), through which the chamber star 202, the nozzle star 220, and / or the chemical solution star (not shown). Set the range for the alarm occurrence cause of the discharge flow rate.

For example, the abnormality of the discharge flow rate is caused by the flow rate hunting according to the source pressure hunting, the pressure hunting, and the like. At this time, the warnings and alarms generated due to abnormal discharge flow rate are processed by the respective chambers 202 and the nozzles 220 in correspondence with the setting information 200 and 210 shown in FIGS. 7 and 8. 202 and nozzles 220 are generated corresponding to setting information 200 and 210. Such setting information 200 and 210 may be set according to process conditions, chemical liquid properties, nozzle types, process recipes, and the like.

In the setting information 200 set for each chamber 202, a time interval that is inspected in real time to detect the discharge flow rate, that is, a 'real time inspection' item is set for each chamber. For example, referring to FIG. 7, in the case of the first chamber SCU1 (204), the item “real time test” is set to “3”. This represents detecting the real time scan at 1 second intervals. That is, a value of 1 or more in the 'real-time test' item detects the discharge flow rate at the time interval of the corresponding value. In addition, when the 'real-time inspection' item is set to '0' as in the third chamber SCU3, it means that the function of measuring in real time is not used. As another example, when a certain value (for example, a specific number, symbol, letter, etc.) is entered in the 'real-time check' item, an alarm may be set to occur when the discharge flow rate is out of an allowable range of two consecutive discharges. have.

The setting information 210 set for each nozzle 220 sets the discharge flow rate as the flow rate values for the upper limit alarm 212, the lower limit alarm 214, the upper limit warning 216, and the lower limit warning 218. For example, the lower limit alarm 214 is set to a flow rate value of about 20% relative to the normal discharge flow rate, and the lower limit alert 218 is set to a flow rate value of about 50% level relative to the normal discharge flow rate. Therefore, in the conventional method, the alarm control is managed as a warning 5% and an alarm 10% of the discharge flow rate, the present invention can manage up to about 50% level of the discharge flow rate. Also, setting information can be set for each chemical. The chemical-specific setting information (not shown) sets, for example, an alarm generation range of the discharge flow rate according to the type, temperature and concentration of the chemical liquid.

5 is a flowchart showing a processing procedure of the substrate processing apparatus according to the present invention. This procedure is explained using the first to third process steps 12 to 16 of the cleaning process 10 shown in FIG.

Referring to FIG. 5, when the first process step 12 is started in step S150, the supply flow rate is adjusted by the flow rate adjusting unit 106 during the first process time (20 seconds) in step S152, and the nozzle 132 is controlled. The chemical liquid is discharged through the substrate. In operation S154, the discharge flow rate is measured in real time using the flow rate measuring unit 108 of the flow rate sensing device 110, and then provided to the controller 120. At this time, the controller 120 monitors in real time whether an abnormality occurs in the measured discharge flow rate.

In step S156, it is determined whether an abnormality occurs in the discharge flow rate. If the abnormality occurs in the discharge flow rate as a result of the determination, the flow advances to step S160 to generate a warning and an alarm. That is, as shown in FIG. 6, the discharge flow rate is real-time for the first process time (20 seconds) of the first process step 12, that is, from the time when the chemical liquid is supplied to the time 140 when the chemical liquid is completed. Measure with Therefore, when an abnormality occurs in the discharge flow rate (142), it is possible to immediately check and measure.

If no abnormality occurs in the discharge flow rate, the flow advances to step S158 to determine whether the first process time has elapsed and the first process step 12 is completed. If the first process step 12 is not completed, the flow advances to step S154 to repeat the measurement of the discharge flow rate in real time.

When the first process step 12 is completed, the substrate processing apparatus 100 sequentially advances the second and third process steps 14 and 16 in step S162.

In the above, the configuration and operation of the flow rate sensing apparatus and the substrate processing apparatus having the same according to the present invention have been shown in accordance with the detailed description and the drawings, which are merely described by way of example, and do not depart from the spirit of the present invention. Various changes and modifications are possible within the scope.

1 is a table showing a process recipe according to an embodiment of a general substrate processing apparatus;

2 is a flowchart showing a procedure of processing the process recipe of FIG.

Figure 3 is a waveform diagram of monitoring the chemical liquid discharge flow rate during the progress of the process recipe of Figure 1;

4 is a diagram showing the configuration of a substrate processing apparatus according to the present invention;

5 is a flowchart showing a processing procedure of the substrate processing apparatus according to the present invention;

FIG. 6 is a waveform diagram of real time monitoring of a chemical liquid discharge flow rate of the flow rate detection device shown in FIG. 4; FIG. And

7 and 8 are diagrams showing setting information for real-time monitoring for each chamber and flow rate.

Explanation of symbols on the main parts of the drawings

100 substrate processing apparatus 102 chemical liquid supply source

104: supply line 106: flow control unit

108: flow rate measuring unit 110: flow rate detection device

120: control unit 130: substrate processing unit

132: nozzle 134: chamber

136: support member 138: drive member

200, 210: Setting information

Claims (10)

In the flow sensing device: A supply line for supplying a chemical liquid; A flow rate measuring unit for measuring the flow rate of the supplied chemical liquid in real time; And setting information to generate an alarm when an abnormality in flow rate occurs, and receiving and monitoring the flow rate measured by the flow rate measuring unit in real time, and as a result of monitoring, if the measured flow rate is an alarm occurrence condition Flow rate sensing device comprising a control unit for generating an alarm to the outside. The method of claim 1, The flow sensing device; Further comprising a flow rate adjusting unit for adjusting the flow rate of the chemical solution is installed in the supply line supplied; The control unit is a flow rate sensing device, characterized in that for adjusting the flow rate of the chemical liquid by controlling the flow rate adjusting unit. The method according to claim 1 or 2, The setting information is a flow rate sensing device comprising a time interval for measuring the flow rate of the chemical liquid from the flow rate measuring unit in real time. The method of claim 3, wherein The setting information includes a flow rate value for the upper limit alarm, the lower limit alarm, the upper and lower warning and the lower limit warning according to the flow rate of the chemical liquid; The alarm generating condition is a flow rate sensing device, characterized in that the measured flow rate corresponds to any one of the upper limit alarm, the lower limit alarm, the upper and lower warning and the lower limit warning. In the substrate processing apparatus: At least one chamber for processing a substrate; At least one nozzle for discharging the chemical liquid to the substrate introduced into the chamber; A chemical liquid supply source supplying the chemical liquid to the nozzle; And a flow rate sensing device provided between the chemical liquid supply source and the nozzle, which measures a discharge flow rate of the nozzle in real time and immediately generates an alarm when an abnormality occurs in the discharge flow rate. The method of claim 5, The flow sensing device is; A supply line connecting the chemical liquid supply source and the nozzle to supply the chemical liquid to the nozzle; A flow rate measuring unit measuring the discharge flow rate in real time; And setting information to generate an alarm when an abnormality occurs in the discharge flow rate, receiving and monitoring the discharge flow rate measured from the flow rate measuring unit in real time, and if the measured discharge flow rate is an alarm occurrence condition set in the setting information. Substrate processing apparatus including a control unit for generating an alarm to the outside. The method of claim 6, And the flow rate sensing device sets and stores the setting information in the control unit for each chamber and for each nozzle. The method of claim 7, wherein The setting information; A time interval for measuring the flow rate of the chemical liquid from the flow rate measuring unit in real time; A substrate processing apparatus comprising a flow rate value for an upper limit alarm, a lower limit alarm, an upper and lower warning and a lower limit warning according to the discharge flow rate of the chemical liquid. In the alarm control method of the substrate processing apparatus: Set an alarm generating condition of at least one nozzles for discharging the chemical liquid into at least one chambers for each chamber and for each nozzle, measure the discharge flow rate of the nozzles in real time, and then the measured discharge flow rate generates the alarm. Alarm control method of the substrate processing apparatus, characterized in that to generate an alarm if the condition The method of claim 9, Setting the above; And a time interval for measuring the discharge flow rate for each chamber, and an alarm generation flow rate value of the discharge flow rate for each nozzle.
KR1020080107533A 2008-10-31 2008-10-31 Apparatus for sensing flowmeter, and substrate treating apparatus with it and method for controlling alarm KR20100048403A (en)

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Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20160102126A (en) * 2015-02-19 2016-08-29 도쿄엘렉트론가부시키가이샤 Processing liquid supply device, processing liquid supply method, and storage medium
KR20180015314A (en) * 2016-08-02 2018-02-13 세메스 주식회사 Apparatus for treating substrate and method for monitoring thereof
KR20180053922A (en) * 2016-11-14 2018-05-24 세메스 주식회사 Test method for substrate treating apparatus
KR20190022111A (en) * 2017-08-25 2019-03-06 세메스 주식회사 Apparatus for treating substrate and measurement method of discharging amount
WO2020017707A1 (en) * 2018-07-20 2020-01-23 김영탁 Flow control system for liquid process material and process monitoring system using same
KR20210119726A (en) * 2020-03-25 2021-10-06 무진전자 주식회사 Chemical providing management system of semiconductor process

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20160102126A (en) * 2015-02-19 2016-08-29 도쿄엘렉트론가부시키가이샤 Processing liquid supply device, processing liquid supply method, and storage medium
KR20180015314A (en) * 2016-08-02 2018-02-13 세메스 주식회사 Apparatus for treating substrate and method for monitoring thereof
KR20180053922A (en) * 2016-11-14 2018-05-24 세메스 주식회사 Test method for substrate treating apparatus
KR20190022111A (en) * 2017-08-25 2019-03-06 세메스 주식회사 Apparatus for treating substrate and measurement method of discharging amount
WO2020017707A1 (en) * 2018-07-20 2020-01-23 김영탁 Flow control system for liquid process material and process monitoring system using same
KR20200009809A (en) * 2018-07-20 2020-01-30 김영탁 Flow control system of liquid process material and process monitoring system using it
KR20210119726A (en) * 2020-03-25 2021-10-06 무진전자 주식회사 Chemical providing management system of semiconductor process

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