TWI693104B - Substrate processing device and parts inspection method of substrate processing device - Google Patents

Substrate processing device and parts inspection method of substrate processing device Download PDF

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TWI693104B
TWI693104B TW107120772A TW107120772A TWI693104B TW I693104 B TWI693104 B TW I693104B TW 107120772 A TW107120772 A TW 107120772A TW 107120772 A TW107120772 A TW 107120772A TW I693104 B TWI693104 B TW I693104B
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橋詰彰夫
平田大輔
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日商斯庫林集團股份有限公司
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    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H01L21/67057—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing with the semiconductor substrates being dipped in baths or vessels

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Abstract

本發明之基板處理裝置係藉由處理液進行基板處理者；其具有對構成該基板處理裝置之經樹脂塗佈之金屬性零件之劣化進行檢查之檢查手段，上述檢查手段具備：測量手段，其係對與檢查對象之零件接觸之液體中之既定金屬濃度進行測量；及劣化判定手段，其係藉由利用該測量手段所測量之金屬濃度與既定之臨限值之對比，來判定檢查對象之零件之劣化程度。 The substrate processing apparatus of the present invention performs substrate processing with a processing liquid; it has an inspection means for inspecting the deterioration of resin-coated metal parts constituting the substrate processing apparatus, the inspection means includes: a measuring means, which It is to measure the predetermined metal concentration in the liquid that is in contact with the parts of the inspection object; and the deterioration judgment means, which judges the inspection object by comparing the metal concentration measured by the measurement method with the predetermined threshold value The degree of deterioration of parts.

Description

基板處理裝置及基板處理裝置之零件檢查方法 Substrate processing device and parts inspection method of substrate processing device

本發明係關於一種處理基板之基板處理裝置。更具體而言，係關於一種具備零件之檢查手段之基板處理裝置、及檢查基板處理裝置之零件之方法。此外，本說明書中所述之基板例如包括半導體晶圓、液晶顯示器用基板、電漿顯示器用基板、有機EL(Electroluminescence，電致發光)用基板、光碟用基板、磁碟用基板、磁光碟用基板、光罩基板、陶瓷基板、太陽能電池用基板等。 The invention relates to a substrate processing device for processing substrates. More specifically, it relates to a substrate processing apparatus provided with a part inspection method, and a method of inspecting parts of the substrate processing apparatus. In addition, the substrates described in this specification include, for example, semiconductor wafers, substrates for liquid crystal displays, substrates for plasma displays, substrates for organic EL (Electroluminescence), substrates for optical discs, substrates for magnetic discs, and magneto-optical discs Substrates, photomask substrates, ceramic substrates, solar cell substrates, etc.

作為此種裝置，習知以來廣為人知有將處理液貯存於處理槽中，使用保持基板之升降器將基板浸漬於該處理槽中進行基板清洗的所謂批次式裝置；及水平地保持基板並使之旋轉，自噴嘴對該旋轉之基板表面噴出處理液之所謂單片式裝置(例如專利文獻1、專利文獻2)。 As such a device, it is widely known from the past that there is a so-called batch-type device that stores a processing liquid in a processing tank and uses a lifter that holds the substrate to immerse the substrate in the processing tank to clean the substrate; The so-called monolithic device that ejects the processing liquid from the nozzle on the surface of the rotating substrate (for example, Patent Document 1 and Patent Document 2).

對於該等裝置之構成零件，為了防止由基板處理中所用之藥液引起之腐蝕，而實施有PTFE(聚四氟乙烯)、PFA(四氟乙烯‧全氟烷基乙烯基醚共聚合體)等樹脂塗佈。例如於批次式裝置之情形時，浸漬於藥液中之升降器係對包含石英之零件本體在設置金屬製之 基底(底材)後實施上述樹脂塗佈，而防止由藥液引起之零件本體之劣化。另外，於單片式裝置之情形時，亦存在為了防止起因於金屬製之零件(例如洗滌器裝置中之鈦盤等)的基板之金屬污染、及防止顆粒產生等，而於金屬製零件實施上述樹脂塗佈之情況。 For the components of these devices, PTFE (polytetrafluoroethylene), PFA (tetrafluoroethylene•perfluoroalkyl vinyl ether copolymer), etc. are implemented in order to prevent corrosion caused by the chemicals used in substrate processing Resin coating. For example, in the case of a batch-type device, the lifter immersed in the chemical liquid is made of metal on the body of the part containing quartz After the substrate (substrate), the above resin coating is performed to prevent the deterioration of the part body caused by the chemical solution. In addition, in the case of a monolithic device, there are also implemented in metal parts in order to prevent metal contamination of the substrate caused by metal parts (such as titanium discs in the washer device, etc.), and to prevent the generation of particles. The case of the above resin coating.

上述樹脂塗佈因長期使用而產生針孔等異常，由此，存在因樹脂之剝離而產生顆粒、或樹脂塗佈下之金屬(包括基底部分)溶出而產生金屬污染之問題。 The resin coating described above has abnormalities such as pinholes due to long-term use. As a result, particles due to peeling of the resin or metal (including the base portion) under the resin coating elutes to cause metal contamination.

因此，習知以來，藉由定期地進行使用實際基板之檢查運轉，對因該檢查運轉而產生之顆粒之量等進行測量而測量零件之劣化度，於發現異常(塗佈剝落)之情形時，採取進行零件之替換、再塗佈處理等對策。 Therefore, since the conventional practice, by periodically performing an inspection operation using an actual substrate, measuring the amount of particles generated by the inspection operation, etc. to measure the degree of deterioration of the parts, when an abnormality (coating peeling) is found , Take measures such as replacement of parts and recoating.

然而，此種方法存在僅為了檢查而需要運轉裝置，裝置運轉率降低等問題。另一方面，若為了抑制裝置運轉率降低而使實施檢查運轉之間隔變長，則難以適時地檢測零件異常，因此存在自裝置零件實際產生異常起至藉由檢查而檢測出異常為止之期間，於零件存在異常之狀態下進行基板處理之問題。 However, this method has a problem that the device needs to be operated only for inspection, and the device operation rate is reduced. On the other hand, if the interval between inspection operations is made longer in order to suppress a decrease in the device operation rate, it is difficult to detect component abnormalities in a timely manner. Therefore, there is a period from when the device component actually generates an abnormality until the abnormality is detected by inspection, The problem of substrate processing when the parts are abnormal.

此外，例如若在處理裝置設置攝影機器，使用拍攝對象零件而獲得之圖像來檢測零件之異常，則亦可實施即時性優異之檢查而又無需為了檢查而運轉裝置。然而，難以自圖像檢測裝置之零件表面中之微細之針孔等，從而難以藉由此種檢查方法適當地檢測出裝置 零件之異常。 In addition, for example, if a photographic machine is installed in the processing device and an image obtained by photographing the target part is used to detect the abnormality of the part, it is possible to perform an inspection with excellent instantaneousness without operating the device for inspection. However, it is difficult to detect fine pinholes in the surface of the parts of the image detection device, making it difficult to properly detect the device by this inspection method Abnormal parts.

[先前技術文獻] [Prior Technical Literature] [專利文獻] [Patent Literature]

[專利文獻1]日本專利特開2002-96012號公報 [Patent Document 1] Japanese Patent Laid-Open No. 2002-96012

[專利文獻2]日本專利特開2003-92343號公報 [Patent Document 2] Japanese Patent Laid-Open No. 2003-92343

本發明鑒於上述各種問題，其目的在於提供一種能夠於使用處理液之基板處理裝置中不降低裝置之運轉率，而在裝置之構成零件產生異常(樹脂剝落)之情形時迅速地檢測到該異常並進行應對之手段。 In view of the above-mentioned various problems, the present invention aims to provide a substrate processing device that uses a processing liquid without rapidly reducing the operating rate of the device, but can detect the abnormality quickly when an abnormality (resin peeling) occurs in the component parts of the device And the means of coping.

為了達成上述目的，本發明採用以下構成。 In order to achieve the above object, the present invention adopts the following configuration.

本發明之基板處理裝置係藉由處理液進行基板處理者；其特徵在於，具有對構成該基板處理裝置之經樹脂塗佈之金屬性零件之劣化進行檢查之檢查手段，上述檢查手段具備：測量手段，其係對與檢查對象之零件接觸之液體中的既定金屬濃度進行測量；及劣化判定手段，其係藉由利用該測量手段所測量之金屬濃度與既定臨限值之對比，來判定檢查對象之零件之劣化程度。 The substrate processing apparatus of the present invention performs substrate processing with a processing liquid; it is characterized by having an inspection means for inspecting the deterioration of resin-coated metal parts constituting the substrate processing apparatus, the inspection means including: measuring Means, which measures the predetermined metal concentration in the liquid in contact with the parts to be inspected; and deterioration judgment means, which determines the inspection by comparing the measured metal concentration with the predetermined threshold using the measurement method The degree of deterioration of the target parts.

藉由如此設為具備對與檢查對象零件接觸之液體之金屬濃度進行測量的手段之裝置構成，可於進行半導體處理之通常之處理流程中進行零件之檢查，可無需特意實施檢查運轉即可檢查零件之劣化。藉此，可有助於裝置之運轉率提高。另外，於檢查中由於進行使用臨限值之判定，故而可無關操作員之知識水平、熟練度等而實施均質且具有即時性之檢查。 By configuring the device with the means for measuring the metal concentration of the liquid in contact with the parts to be inspected in this way, parts can be inspected in the normal processing flow of semiconductor processing, and inspection can be performed without specifically performing inspection operations Deterioration of parts. With this, it can contribute to the improvement of the operation rate of the device. In addition, because the judgment of the use threshold is performed during the inspection, it is possible to implement a homogeneous and immediate inspection regardless of the operator's knowledge level, proficiency, and the like.

另外，上述測量手段可為對上述液體之排液中之上述金屬濃度進行測量者。若為此種構成，則藉由在排液之流路設置金屬濃度計，例如即便是單片式裝置亦可容易地測量與裝置零件接觸之液體之金屬濃度。 In addition, the measuring means may be a person who measures the concentration of the metal in the discharge of the liquid. With such a configuration, by installing a metal concentration meter in the discharge channel, for example, even a single-chip device can easily measure the metal concentration of the liquid in contact with the device parts.

另外，上述液體中可含有清洗上述基板處理裝置內部之裝置清洗液。若為此種構成，則於進行基板處理裝置之清洗時，亦可比如說順便進行裝置零件之檢查，從而可有助於裝置之運轉率之提高。 In addition, the liquid may contain a device cleaning liquid for cleaning the inside of the substrate processing device. With such a configuration, when cleaning the substrate processing apparatus, for example, inspection of device parts can also be performed, which can contribute to the improvement of the operation rate of the apparatus.

另外，上述液體中可含有上述處理液。若為此種構成，則於所處理之基板不含金屬成分之情形時，可一面為了處理基板而運轉裝置一面進行裝置零件之檢查，從而可有助於裝置之運轉率之提高。 In addition, the liquid may contain the treatment liquid. With such a configuration, when the substrate to be processed does not contain a metal component, the device parts can be inspected while the device is operated for processing the substrate, thereby contributing to the improvement of the operation rate of the device.

另外，上述基板處理裝置可為進而具有貯存上述處理液之處理液槽，上述測量手段設置於該處理液槽內。於所謂之批次式基板處理裝置中，只要在處理槽中預設置測量手段，就可對實際處理之基板所暴露之環境之金屬濃度進行測量，可更準確地進行考慮到對處 理對象基板之影響之檢查。 In addition, the substrate processing apparatus may further include a processing liquid tank that stores the processing liquid, and the measurement means is provided in the processing liquid tank. In the so-called batch-type substrate processing apparatus, as long as the measuring means is pre-installed in the processing tank, the metal concentration of the environment to which the substrate actually processed is exposed can be measured, and the position can be more accurately considered. Check the influence of the target substrate.

另外，上述基板處理裝置可為批次式裝置，上述檢查對象之零件可為升降器。批次式裝置之升降器在大多數情況下暴露於藥液中，若金屬溶出至處理槽內之處理液中，則會以批次單位對基板產生不良影響，因此藉由應用能夠進行穩定且即時之檢查之本發明，可獲得更明顯之效果。 In addition, the substrate processing apparatus may be a batch type apparatus, and the part to be inspected may be a lifter. In most cases, the lifter of the batch-type device is exposed to the chemical liquid. If the metal is eluted into the processing liquid in the processing tank, the substrate will be adversely affected in batch units, so it can be stabilized and applied by the application. The instant inspection of the present invention can obtain more obvious effects.

另外，上述基板處理裝置亦可為單片式裝置，上述檢查對象之零件亦可為旋轉夾頭。於單片式裝置中，由於藉由旋轉夾頭(更具體而言，為旋轉基座、夾頭銷)支撐處理對象基板，故而若該零件之樹脂塗佈發生剝落，則會直接對處理對象基板產生不良影響。因此，藉由應用能夠進行穩定且即時之檢查之本發明，可獲得更明顯之效果。 In addition, the substrate processing apparatus may be a monolithic apparatus, and the part to be inspected may be a rotary chuck. In a monolithic device, the substrate to be processed is supported by a rotating chuck (more specifically, a rotating base, a chuck pin), so if the resin coating of the part peels off, the processing object will be directly The substrate has an adverse effect. Therefore, by applying the present invention capable of performing stable and real-time inspection, a more obvious effect can be obtained.

另外，上述臨限值可根據上述基板處理裝置之規格、上述基板處理之製程、上述液體之供給條件等裝置條件或處理條件之不同而設為不同之臨限值。原因在於：若該等條件不同，則樹脂塗佈之劣化之進行程度亦會不同。每個條件各自之最佳之臨限值例如可獲取樣品構件之劣化程度之資料，並以該資料為基礎而藉由實驗確定。藉由對每個條件分別預先設定臨限值，可實施精度更高之檢查。 In addition, the threshold value may be set to a different threshold value according to different device conditions or processing conditions such as the specifications of the substrate processing apparatus, the process of the substrate processing, and the supply conditions of the liquid. The reason is that if these conditions are different, the degree of deterioration of resin coating will also be different. The optimal threshold value of each condition can be obtained by, for example, the data of the degree of deterioration of the sample component, and based on this data, it is determined by experiment. By setting threshold values for each condition in advance, a more accurate inspection can be implemented.

另外，上述測量手段可為比電阻計。於檢查中，由於只要知曉是否自對象液體中檢測出(重)金屬成分即可，故而藉由使用比電阻 計進行基於液體之導電性之測量，可迅速且容易地判定液體中之金屬成分之有無。所謂比電阻計，可藉由在液體中將電極隔開特定間隔，並測量該液體之電阻值而求出。電極之面積、或將電極隔開之間隔由於會對電阻之值之大小產生影響，故而嚴格地設定。此外，作為測量液體中之金屬濃度之方法，亦可測量液體之導電率(或電傳導率)代替測量比電阻。 In addition, the above measurement means may be a specific resistance meter. During the inspection, it is only necessary to know whether the (heavy) metal component is detected from the target liquid, so by using the specific resistance The meter performs measurement based on the conductivity of the liquid to quickly and easily determine the presence or absence of metal components in the liquid. The so-called specific resistance meter can be obtained by separating electrodes in a liquid at specific intervals and measuring the resistance value of the liquid. The area of the electrodes, or the interval between the electrodes, has an effect on the value of the resistance, so it is strictly set. In addition, as a method of measuring the metal concentration in the liquid, the electrical conductivity (or electrical conductivity) of the liquid can also be measured instead of measuring the specific resistance.

上述檢查裝置進而具有輸出藉由上述劣化判定手段所判定之劣化程度的輸出手段，上述輸出手段可為於藉由上述劣化判定手段所判定之劣化程度超過既定基準之情形時輸出警告信號者。根據此種構成，可防止繼續使用發生樹脂剝落之非正常零件之情況。 The inspection device further has output means for outputting the degree of deterioration determined by the deterioration determination means. The output means may be a person who outputs a warning signal when the degree of deterioration determined by the deterioration determination means exceeds a predetermined standard. According to such a configuration, it is possible to prevent the continued use of abnormal parts where resin peeling occurs.

另外，本發明之基板處理裝置之零件檢查方法係對構成使用處理液進行基板處理之基板處理裝置的經樹脂塗佈之零件之劣化進行檢查之方法；其特徵在於具有：液體供給步驟，其係將液體供給至裝置中，使該液體與檢查對象之零件接觸；測量步驟，其係對與該檢查對象之零件接觸之液體中的既定金屬濃度進行測量；及劣化判定步驟，其係基於相對於該所測量之金屬濃度之既定臨限值，對檢查對象之零件之劣化程度進行判定；上述各步驟係於使用上述基板處理裝置進行之基板處理之步驟內實施。 In addition, the component inspection method of the substrate processing apparatus of the present invention is a method for inspecting the deterioration of resin-coated parts constituting the substrate processing apparatus that uses a processing liquid for substrate processing; it is characterized by having: a liquid supply step, which is Supplying liquid to the device to bring the liquid into contact with the parts to be inspected; the measuring step, which measures the predetermined metal concentration in the liquid in contact with the parts to be inspected; and the deterioration judgment step, which is based on the relative The predetermined threshold of the measured metal concentration determines the degree of deterioration of the parts to be inspected; the above steps are carried out in the step of substrate processing using the above substrate processing device.

另外，上述零件檢查方法中之上述臨限值可根據包含上述基板處理裝置之規格、上述基板處理之製程、上述液體之供給條件中之至少一者的測量條件之不同而設定。 In addition, the threshold value in the component inspection method may be set according to different measurement conditions including at least one of the specifications of the substrate processing apparatus, the process of the substrate processing, and the supply conditions of the liquid.

另外，上述零件檢查方法可進而具有：判定結果輸出步驟，其係輸出上述劣化判定步驟中所判定之零件之劣化程度；進而，可進而具有：警告步驟，其係於上述劣化判定步驟中所判定之劣化程度超過既定基準之情形時輸出警告信號。 In addition, the above-mentioned parts inspection method may further include: a determination result output step, which outputs the degree of deterioration of the parts determined in the above-mentioned deterioration determination step; and, may further have: a warning step, which is determined in the above-mentioned deterioration determination step The warning signal is output when the degree of deterioration exceeds a predetermined standard.

另外，上述測量步驟中之上述既定金屬濃度之測量可藉由對上述液體中之比電阻進行測量而進行。 In addition, the measurement of the predetermined metal concentration in the measurement step can be performed by measuring the specific resistance in the liquid.

另外，上述零件檢查方法可為上述各步驟於以批次單位之基板處理之前及/或之後實施者。根據此種檢查方法，可於以批次單位之基板處理之間之待機時間內實施零件之檢查，因此可有助於基板處理裝置之運轉率之提高。 In addition, the above component inspection method may be implemented before and/or after the above steps are processed in batch units of substrate processing. According to such an inspection method, parts can be inspected within the standby time between substrate processing in batch units, which can contribute to the improvement of the operation rate of the substrate processing apparatus.

另外，上述零件檢查方法亦可為每當結束一片基板之處理時就實施上述各步驟者。若如此針對每一基板實施零件之檢查，則可防止使用產生樹脂剝落之非正常之零件來實施基板之處理之情況。 In addition, the above-mentioned component inspection method may be such that the above-mentioned steps are performed whenever the processing of one substrate is finished. If the parts are inspected for each substrate in this way, it is possible to prevent the use of abnormal parts that cause resin peeling to perform the processing of the substrate.

另外，上述零件檢查方法亦可為於基板處理中實施上述各步驟者。若如此於基板處理中實施檢查，則於基板處理之例程中亦可實施裝置之零件檢查，因此可非常有效率地實施零件之檢查，從而可有助於裝置運轉率之提高。 In addition, the above-described component inspection method may be implemented by performing the above steps in the substrate processing. If the inspection is carried out in the substrate processing in this way, the inspection of the parts of the device can also be carried out in the routine of the substrate processing, so the inspection of the parts can be carried out very efficiently, which can contribute to the improvement of the operation rate of the device.

另外，上述零件檢查方法中之上述液體可為上述基板處理所使 用之處理液、及/或清洗上述基板處理裝置內部之裝置清洗液。 In addition, the liquid in the part inspection method may be used by the substrate processing The used processing liquid and/or the device cleaning liquid for cleaning the inside of the substrate processing device.

根據本發明，能夠於使用處理液之基板處理裝置中不降低裝置之運轉率，而在裝置之構成零件產生異常(樹脂剝落)之情形時迅速地檢測到該異常並進行應對。 According to the present invention, it is possible to quickly detect and respond to an abnormality (resin peeling) of the component parts of the device without reducing the operation rate of the device in the substrate processing device using the processing liquid.

100、200‧‧‧基板檢查裝置 100、200‧‧‧Substrate inspection device

110‧‧‧處理槽 110‧‧‧Treatment tank

111‧‧‧浸漬槽 111‧‧‧Immersion tank

112‧‧‧溢流槽 112‧‧‧Overflow tank

120‧‧‧處理液噴出噴嘴 120‧‧‧Processing liquid spray nozzle

125‧‧‧處理液供給源 125‧‧‧Process liquid supply source

130‧‧‧升降器 130‧‧‧Lift

131‧‧‧升降驅動源 131‧‧‧Elevating drive source

132‧‧‧升降器臂 132‧‧‧lifter arm

133‧‧‧板部 133‧‧‧ Board Department

134‧‧‧中央保持構件(基板保持構件) 134‧‧‧ Central holding member (substrate holding member)

135A、135B‧‧‧側方保持構件(基板保持構件) 135A, 135B ‧‧‧ side holding member (substrate holding member)

140、250‧‧‧比電阻計 140, 250‧‧‧ Specific resistance meter

150、245‧‧‧排液回收部 150, 245‧‧‧ Drainage recovery department

160、260‧‧‧控制裝置 160、260‧‧‧Control device

161‧‧‧判定部 161‧‧‧ Judgment Department

162‧‧‧信號處理部 162‧‧‧Signal Processing Department

163‧‧‧檢查基準記憶部 163‧‧‧ Inspection Standard Memory Department

164‧‧‧輸出部 164‧‧‧ Output

210‧‧‧腔室 210‧‧‧ chamber

211‧‧‧側壁 211‧‧‧Side wall

212‧‧‧頂壁 212‧‧‧Top wall

213‧‧‧地板 213‧‧‧ Floor

214‧‧‧風扇過濾單元 214‧‧‧Fan filter unit

215‧‧‧排氣管 215‧‧‧Exhaust pipe

220‧‧‧旋轉夾頭 220‧‧‧Rotating chuck

221‧‧‧旋轉基座 221‧‧‧rotating base

222‧‧‧旋轉馬達 222‧‧‧rotating motor

223‧‧‧外罩構件 223‧‧‧Housing components

224‧‧‧旋轉軸 224‧‧‧rotation axis

226‧‧‧夾頭銷 226‧‧‧ Chuck pin

230‧‧‧處理液噴嘴 230‧‧‧treatment liquid nozzle

231‧‧‧噴嘴頭 231‧‧‧ nozzle head

232‧‧‧噴嘴支臂 232‧‧‧ nozzle support arm

240‧‧‧杯 240‧‧‧ cup

241‧‧‧外壁 241‧‧‧Outer wall

242‧‧‧防濺板 242‧‧‧Splash proof board

242a‧‧‧上端 242a‧‧‧top

243‧‧‧傾斜部 243‧‧‧inclined part

244‧‧‧引導部 244‧‧‧Guide Department

261‧‧‧判定部 261‧‧‧Judgment Department

263‧‧‧檢查基準記憶部 263‧‧‧ Inspection Standard Memory Department

264‧‧‧輸出部 264‧‧‧ Output

W‧‧‧基板 W‧‧‧Substrate

K‧‧‧梳齒部 K‧‧‧Comb

X‧‧‧旋轉軸線 X‧‧‧rotation axis

圖1係表示實施例1之基板處理裝置之構成之概略圖。 FIG. 1 is a schematic diagram showing the configuration of the substrate processing apparatus of the first embodiment.

圖2係表示實施例1之處理槽之主要部分構成之概略前視圖。 Fig. 2 is a schematic front view showing the configuration of the main part of the processing tank of the first embodiment.

圖3係實施例1之基板處理裝置之局部俯視圖。 3 is a partial plan view of the substrate processing apparatus of Embodiment 1. FIG.

圖4係表示實施例1之控制裝置之功能之方塊圖。 4 is a block diagram showing the function of the control device of the first embodiment.

圖5係表示處理液之金屬濃度與比電阻值之相關關係之曲線圖。 Fig. 5 is a graph showing the correlation between the metal concentration of the treatment liquid and the specific resistance value.

圖6係表示在實施例1中設定檢查基準時之處理之流程的流程圖。 6 is a flowchart showing the flow of processing when setting an inspection standard in the first embodiment.

圖7係表示在實施例1中實施對零件之劣化進行判定之處理的時點之一例之流程圖。 FIG. 7 is a flowchart showing an example of a point in time when the process of determining the deterioration of the parts is implemented in the first embodiment.

圖8係表示在實施例1中實施對零件之劣化進行判定之處理的時點之一例之流程圖。 FIG. 8 is a flowchart showing an example of a point in time when the process of determining the deterioration of parts is implemented in the first embodiment.

圖9係表示實施例2之基板處理裝置之構成之概略圖。 9 is a schematic diagram showing the configuration of the substrate processing apparatus of the second embodiment.

圖10係表示實施例2之控制裝置之功能之方塊圖。 10 is a block diagram showing the function of the control device of Embodiment 2.

圖11係表示在實施例2中設定檢查基準時之處理之流程的流程圖。 11 is a flowchart showing the flow of processing when setting the inspection standard in the second embodiment.

圖12係表示在實施例2中實施對零件之劣化進行判定之處理的時點之一例之流程圖。 FIG. 12 is a flowchart showing an example of a point in time when the process of determining the deterioration of parts is implemented in the second embodiment.

以下，參照圖式基於實施例例示性地詳細說明用以實施本發明之形態。但，關於該實施例中所記載之構成零件之尺寸、材質、形狀、其相對配置等，只要無特別說明，則未意圖將本發明之範圍僅限於其等。 Hereinafter, the form for implementing the present invention will be exemplarily described in detail based on the embodiments with reference to the drawings. However, the size, material, shape, relative arrangement, etc. of the component parts described in this embodiment are not intended to limit the scope of the present invention to them unless otherwise specified.

<實施例1> <Example 1>

圖1係表示本實施例之基板處理裝置100之概略剖視圖，圖2係表示基板處理裝置100之處理槽110之主要部分構成之概略前視圖。基板處理裝置100係將處理液貯存於處理槽110中，使用保持基板W之升降器130，將基板浸漬於該處理槽110中而進行基板W之清洗處理等的所謂之批次式裝置。於基板處理裝置100中，藉由搬送機械臂(未圖示)將複數個基板W(以下，亦將一組之複數個基板W稱為批次)搬入搬出至裝置內外。此外，基板處理裝置100可為每種處理液使用不同之處理槽之多層式裝置，亦可為能夠在將基板W保持於處理槽內之情況下替換處理液之單層式裝置。 1 is a schematic cross-sectional view showing the substrate processing apparatus 100 of the present embodiment, and FIG. 2 is a schematic front view showing the configuration of the main part of the processing tank 110 of the substrate processing apparatus 100. The substrate processing apparatus 100 is a so-called batch type apparatus that stores a processing liquid in a processing tank 110 and uses a lifter 130 that holds the substrate W to immerse the substrate in the processing tank 110 to perform cleaning processing of the substrate W and the like. In the substrate processing apparatus 100, a plurality of substrates W (hereinafter, a plurality of substrates W in a group is also referred to as a batch) is carried in and out of the apparatus by a transfer robot (not shown). In addition, the substrate processing apparatus 100 may be a multi-layer apparatus using different processing tanks for each processing liquid, or a single-layer apparatus capable of replacing the processing liquid while holding the substrate W in the processing tank.

如圖1、及圖2所示般，基板處理裝置100具備：具備浸漬槽111及溢流槽112之處理槽110；配置於處理槽內之處理液噴出噴嘴120；處理液供給源125；升降器130；排液回收部150；及控制裝置160。並且，於浸漬槽111內設置有比電阻計140。 As shown in FIGS. 1 and 2, the substrate processing apparatus 100 includes: a processing tank 110 including an immersion tank 111 and an overflow tank 112; a processing liquid discharge nozzle 120 disposed in the processing tank; a processing liquid supply source 125; Device 130; drain recovery unit 150; and control device 160. In addition, a specific resistance meter 140 is provided in the dipping tank 111.

處理液噴出噴嘴120係設置於浸漬槽111之底部兩側之每一側，且向浸漬槽111內供給各種藥液或純水等處理液之噴嘴。處理液噴出噴嘴120係沿著處理槽110之長度方向延伸之圓筒狀之噴嘴，且具備複數個噴出孔。另外，處理液噴出噴嘴120連接於處理槽110外部之處理液供給源125，而自處理液供給源125供給既定之處理液。此外，關於處理液噴出噴嘴120，亦可設置1個狹縫狀之噴出口代替複數個噴出孔。 The treatment liquid ejection nozzles 120 are nozzles provided on each side of the bottom of the dipping tank 111, and supply various treatment liquids such as chemical liquid or pure water into the dipping tank 111. The processing liquid discharge nozzle 120 is a cylindrical nozzle extending along the longitudinal direction of the processing tank 110, and is provided with a plurality of discharge holes. In addition, the processing liquid discharge nozzle 120 is connected to a processing liquid supply source 125 outside the processing tank 110, and a predetermined processing liquid is supplied from the processing liquid supply source 125. In addition, regarding the processing liquid discharge nozzle 120, one slit-shaped discharge port may be provided instead of a plurality of discharge holes.

此外，作為基板處理所使用之藥液，例如可列舉：SPM(硫酸與過氧化氫水之混合液)、臭氧過氧化氫混合物(臭氧、過氧化氫水之混合液)、SC1(氨水與過氧化氫水之混合液)、SC2(鹽酸與過氧化氫水之混合液)、HF(氫氟酸)、H3PO4(磷酸)、FPM(氫氟酸與過氧化氫水之混合液)、FOM(氫氟酸與臭氧過氧化氫混合物之混合液)等。此外，於本說明書中，所謂「處理液」一詞，係以包含藥液與純水之含義使用。另外，用於成膜處理之光阻劑液等塗佈液、用於去除多餘之膜之藥液、用於蝕刻之藥液等亦屬於「處理液」。 In addition, as the chemical solution used for substrate processing, for example, SPM (mixed solution of sulfuric acid and hydrogen peroxide water), ozone hydrogen peroxide mixture (mixed solution of ozone and hydrogen peroxide water), SC1 (ammonia water and peroxide) Hydrogen oxide water mixture), SC2 (hydrochloric acid and hydrogen peroxide water mixture), HF (hydrofluoric acid), H 3 PO 4 (phosphoric acid), FPM (hydrofluoric acid and hydrogen peroxide water mixture) , FOM (mixture of hydrofluoric acid and ozone hydrogen peroxide mixture), etc. In addition, in this specification, the term "treatment liquid" is used to include chemical liquid and pure water. In addition, coating liquids such as photoresist liquids used for film formation processing, chemical liquids used for removing excess film, and chemical liquids used for etching, etc. also belong to the "processing liquid".

自處理液供給源125供給之處理液自處理液噴出噴嘴120之噴出孔噴出至浸漬槽111內。此處，噴出孔朝向浸漬槽111之中央底部設置，自兩側之處理液噴出噴嘴120噴出之處理液與浸漬槽111之底壁平行地流動，並最終與浸漬槽111底部中央碰撞，其後於浸漬槽111之中央部附近形成朝向上方之處理液之流動。並且，自處理液噴出噴嘴120供給之處理液自浸漬槽111之上部溢出，所溢出之處理 液被回收至與溢流槽112底部相連之排液回收部150。 The treatment liquid supplied from the treatment liquid supply source 125 is discharged into the dipping tank 111 from the discharge hole of the treatment liquid discharge nozzle 120. Here, the injection holes are provided toward the center bottom of the dipping tank 111, and the processing liquid sprayed from the processing liquid spray nozzles 120 on both sides flows parallel to the bottom wall of the dipping tank 111, and finally collides with the center of the bottom of the dipping tank 111, after which A treatment liquid flow upward is formed near the center of the dipping tank 111. Furthermore, the processing liquid supplied from the processing liquid discharge nozzle 120 overflows from the upper part of the dipping tank 111, and the overflowed processing The liquid is recovered to the drain recovery part 150 connected to the bottom of the overflow tank 112.

升降器130係用以使基板W浸漬於浸漬槽111中所貯存之處理液中之零件。升降器130具備升降驅動源131、升降器臂132、連接於升降器臂之板部133、及以懸樑狀設置於板部133且保持基板W之3個基板保持構件(1個中央保持構件134、及2個側方保持構件135A、135B)。其中，中央保持構件134係位於被保持為上下表面位於水平方向之姿勢(以下，亦稱為豎立姿勢)之基板W之中央之鉛直下方而與基板外緣相接並保持基板者。側方保持構件135A、135B係沿著被保持為豎立姿勢之基板W之外緣而中間隔著中央保持構件134在其兩側方配置於距離中央保持構件134均等之距離之位置。並且，中央保持構件134之上端、與側方保持構件135A、135B之下端係以在上下方向產生既定之間隔之方式配置。 The lifter 130 is used to immerse the substrate W in the processing liquid stored in the immersion tank 111. The lifter 130 includes a lift driving source 131, a lifter arm 132, a plate portion 133 connected to the lifter arm, and three substrate holding members (one central holding member 134) provided in the cantilever shape on the plate portion 133 and holding the substrate W , And two side holding members 135A, 135B). Among them, the central holding member 134 is positioned vertically below the center of the substrate W held in a posture in which the upper and lower surfaces are in the horizontal direction (hereinafter, also referred to as an upright posture), and is in contact with the outer edge of the substrate and holds the substrate. The side holding members 135A and 135B are arranged at an equal distance from the center holding member 134 along the outer edge of the substrate W held in the upright posture with the center holding member 134 on both sides. In addition, the upper end of the central holding member 134 and the lower ends of the side holding members 135A and 135B are arranged at a predetermined interval in the vertical direction.

圖3係升降器130之板部133及上述3個基板保持構件之概略俯視圖。如圖3所示般，基板保持構件分別具備梳齒部K，該梳齒部K係在長度方向以既定間隔配設有使基板W之外緣部嵌入而將基板W以豎立姿勢保持之複數個槽。 FIG. 3 is a schematic plan view of the plate portion 133 of the elevator 130 and the above three substrate holding members. As shown in FIG. 3, each of the substrate holding members includes a comb-tooth portion K, which is provided at a predetermined interval in the longitudinal direction to embed the outer edge of the substrate W to hold the substrate W in an upright posture Slots.

此外，升降器臂132、板部133、各基板保持構件134、135A、135B係藉由升降驅動源131而能夠在鉛直方向一體地升降。藉此，升降器130能夠使藉由3個基板保持構件以既定間隔平行地排列並保持之複數個基板W，在浸漬於浸漬槽111中所貯存之處理液中之位置、與處理槽110之上方且與搬送機械臂進行基板交接之位置之 間進行升降。此外，關於升降驅動源131，可採用滾珠螺桿機構、傳送帶機構、氣缸等公知之多種機構。 In addition, the lifter arm 132, the plate portion 133, and the respective substrate holding members 134, 135A, and 135B can be lifted up and down integrally in the vertical direction by the lift drive source 131. Thereby, the lifter 130 can make the positions of the plurality of substrates W arranged and held in parallel by the three substrate holding members at a predetermined interval in parallel in the processing liquid stored in the immersion tank 111, and the position of the processing tank 110 Above and at the position where the substrate is transferred to the transfer robot Between the lift. In addition, as for the lifting drive source 131, various known mechanisms such as a ball screw mechanism, a conveyor belt mechanism, and an air cylinder can be used.

比電阻計140具備測量液體之比電阻值之感測器，該感測器係以在將處理液供給至浸漬槽111中時能夠接觸該處理液之方式(較佳為浸漬於其中之方式)設置於浸漬槽111之內壁。比電阻計140可使用包括市售品在內之既知技術，尤其是感測器部分，較理想為耐化學品性、耐熱性優異之素材。 The specific resistance meter 140 is provided with a sensor for measuring the specific resistance value of the liquid in such a manner that it can contact the processing liquid when the processing liquid is supplied into the immersion tank 111 (preferably a method of immersion in it) It is provided on the inner wall of the dipping tank 111. The specific resistance meter 140 can use a known technology including a commercially available product, especially a sensor part, and is preferably a material excellent in chemical resistance and heat resistance.

於上述構成中，藉由比電阻計140而測量處理液中之比電阻值，該所測量之值被輸入至控制裝置160之信號處理部162中。此外，由於如後所述般處理液中之比電阻值與金屬(離子)濃度之間存在密切之相關關係，故而藉由獲得比電阻值，可掌握液體中之金屬成分之量。 In the above configuration, the specific resistance value in the processing liquid is measured by the specific resistance meter 140, and the measured value is input to the signal processing unit 162 of the control device 160. In addition, since there is a close correlation between the specific resistance value in the treatment liquid and the metal (ion) concentration as described later, the amount of the metal component in the liquid can be grasped by obtaining the specific resistance value.

排液回收部150係回收自浸漬槽111向溢流槽112溢出之處理液。回收至排液回收部150之排液於淨化處理後被送至處理液供給源125進行循環使用。或者，亦可以不進行排液之淨化處理而朝裝置外排出之方式構成。 The drain liquid recovery part 150 recovers the processing liquid overflowing from the immersion tank 111 to the overflow tank 112. The drained liquid recovered to the drained liquid recovery unit 150 is sent to the processing liquid supply source 125 after purification treatment to be recycled. Alternatively, it may be configured to be discharged out of the device without purifying the discharged liquid.

作為控制裝置160之硬體之構成與一般之電腦相同。即，成為具備鍵盤等輸入部、顯示器等輸出部、CPU(Central Processing Unit，中央處理單元)、ROM(Read only memory，唯讀記憶體)、RAM(Random access memory，隨機存取記憶體)、及大容量記憶裝 置等之構成。藉由控制裝置160之CPU執行既定之處理程式，而控制基板處理裝置100之搬送機械臂、處理液噴出噴嘴120、升降器130等各動作機構，從而進行基板處理裝置100中之處理。 The configuration of the hardware as the control device 160 is the same as that of a general computer. That is, it has an input unit such as a keyboard, an output unit such as a display, a CPU (Central Processing Unit), a ROM (Read only memory), a RAM (Random access memory), And large-capacity memory The composition of the wait. The CPU of the control device 160 executes a predetermined processing program to control the transport robot arm of the substrate processing device 100, the processing liquid ejection nozzle 120, and the lifter 130 to perform processing in the substrate processing device 100.

關於以上所說明之構成基板處理裝置100之各零件中至少與處理液(及該處理液之蒸氣)接觸者、例如升降器130之各部及浸漬槽111等，為了抑制由藥液引起之侵蝕而實施樹脂塗佈，從而於表面具有塗層。使用金屬作為該塗佈之基底。於塗佈劣化之情形時，處理液可能會侵入所產生之間隙。另外，由於塗佈膜變薄或在塗佈膜表面產生氣泡，而處理液變得容易浸透至基底。因此，於因由藥液引起之侵蝕導致塗佈剝落、或在表面產生氣泡等情形時，基底之金屬成分溶出至處理液中，而發生基板之金屬污染。 In order to suppress the erosion caused by the chemical solution, the above-mentioned components constituting the substrate processing apparatus 100 are in contact with at least the processing liquid (and the vapor of the processing liquid), such as the parts of the lifter 130 and the dipping tank 111, etc. The resin is applied to have a coating on the surface. Metal is used as the substrate for this coating. When the coating is deteriorated, the treatment liquid may invade the resulting gap. In addition, since the coating film becomes thin or bubbles are generated on the surface of the coating film, the processing liquid becomes easy to penetrate into the substrate. Therefore, when the coating is peeled off due to the erosion caused by the chemical solution, or bubbles are generated on the surface, the metal components of the base are eluted into the processing liquid, and metal contamination of the substrate occurs.

此外，作為塗佈所使用之樹脂，例如可列舉PCTFE(聚氯三氟乙烯)、ECTFE(氯三氟乙烯‧乙烯共聚合體)、PFA(四氟乙烯‧全氟烷基乙烯基醚共聚合體)、PTFE(聚四氟乙烯)等。 In addition, examples of the resin used for coating include PCTFE (polychlorotrifluoroethylene), ECTFE (chlorotrifluoroethylene‧ethylene copolymer), and PFA (tetrafluoroethylene•perfluoroalkyl vinyl ether copolymer). , PTFE (polytetrafluoroethylene), etc.

繼而，對控制裝置160之有關零件檢查之功能進行說明。圖4係表示比電阻計140及控制裝置160之有關零件檢查之功能的方塊圖。圖4所示之判定部161係藉由控制裝置160之CPU執行既定之處理程式而於控制裝置160內實現之功能處理部。詳細內容將於後文敍述，判定部161係基於藉由比電阻計所算出之比電阻值，對構成基板處理裝置100之具有樹脂塗層之零件進行異常有無判定處理(即，零件之檢查)。 Next, the function of the parts inspection of the control device 160 will be described. FIG. 4 is a block diagram showing the function of the specific resistance check of the specific resistance meter 140 and the control device 160. The determination unit 161 shown in FIG. 4 is a function processing unit implemented in the control device 160 by the CPU of the control device 160 executing a predetermined processing program. The details will be described later. Based on the specific resistance value calculated by the specific resistance meter, the determination unit 161 performs abnormality determination processing (that is, inspection of parts) on the resin-coated parts constituting the substrate processing apparatus 100.

檢查基準記憶部163係以上述RAM或磁碟構成，且以與處理裝置之規格、處理液之種類、處理液之供給條件等條件分別對應之態樣，記憶藉由判定部161進行之判定中所使用之判定臨限值。 The inspection reference memory section 163 is composed of the above-mentioned RAM or magnetic disk, and stores the judgment made by the judgment section 161 in accordance with the specifications of the processing device, the type of processing liquid, and the supply conditions of the processing liquid. The judgment threshold used.

輸出部164輸出包含檢查結果之各種資訊。資訊之輸出目的地典型而言為顯示器等顯示裝置，亦可對印刷裝置輸出資訊，或自揚聲器輸出訊息或警報，或對使用者之終端以電子郵件等形式發送訊息，或對外部電腦發送資訊。 The output unit 164 outputs various information including the inspection result. The output destination of information is typically a display device such as a display, and can also output information to a printing device, or output a message or alarm from a speaker, or send a message to the user's terminal in the form of e-mail, or send information to an external computer .

(關於劣化判定處理方法) (About deterioration judgment processing method)

其次，對藉由上述判定部161進行之零件之劣化判定處理進行說明。如上所述般，判定部161係對於檢查對象零件是否存在異常(樹脂剝落)，而基於藉由比電阻計140所獲得之處理液之比電阻值進行檢查。即，若金屬成分溶出至處理液中，則處理液之金屬離子濃度上升，相應地，處理液之比電阻值減少。將關於此種金屬離子濃度與比電阻值之相關關係之具體例示於以下。 Next, the deterioration judgment process of the parts by the judgment unit 161 will be described. As described above, the determination unit 161 checks whether the inspection target component is abnormal (resin peeling) based on the specific resistance value of the processing liquid obtained by the specific resistance meter 140. That is, when the metal component is eluted into the treatment liquid, the metal ion concentration of the treatment liquid increases, and accordingly, the specific resistance value of the treatment liquid decreases. Specific examples of the correlation between such metal ion concentration and specific resistance value are shown below.

圖5係表示處理液之金屬離子濃度與比電阻值之關係性之曲線圖。分別為，縱軸表示金屬離子濃度，橫軸表示比電阻值。自圖5亦可知，處理液中之金屬濃度變得越高，比電阻值變得越低。藉由預先掌握如圖5所例示之表示處理液之金屬離子濃度與比電阻值之關係性之資料或關係式，可自所測量之比電阻值推定出處理液中之金屬離子濃度之值。 Fig. 5 is a graph showing the relationship between the concentration of metal ions and the specific resistance value of the treatment liquid. Respectively, the vertical axis represents the metal ion concentration, and the horizontal axis represents the specific resistance value. It can also be seen from FIG. 5 that the higher the metal concentration in the treatment liquid, the lower the specific resistance value. By preliminarily grasping the data or the relational expression indicating the relationship between the metal ion concentration of the treatment liquid and the specific resistance value as illustrated in FIG. 5, the value of the metal ion concentration in the treatment liquid can be estimated from the measured specific resistance value.

於本實施例中，進而以成為檢查對象之升降器130為例進行說明。如上所述，於升降器130實施有樹脂塗佈，該塗佈因藥液而慢慢劣化，產生樹脂塗層之表面呈水泡狀在各處隆起之現象(氣泡)。另外，關於樹脂塗佈已剝落之部分，露出用作塗佈之基底之金屬部分(底材)。若成為此種狀態，則於將升降器130浸漬於處理液中時，底材之成分溶出至該處理液中，處理液之金屬離子濃度上升。如此，則與該處理液之金屬離子濃度成反比地，處理液之比電阻值減少。 In this embodiment, the lifter 130 to be inspected will be described as an example. As described above, resin coating is applied to the lifter 130, and the coating gradually deteriorates due to the chemical solution, resulting in a phenomenon in which the surface of the resin coating swells up in various places (bubbles). In addition, regarding the peeled off portion of the resin coating, the metal portion (substrate) used as the base of the coating is exposed. In this state, when the lifter 130 is immersed in the processing liquid, the components of the substrate are eluted into the processing liquid, and the metal ion concentration of the processing liquid increases. In this way, the specific resistance value of the processing liquid decreases in inverse proportion to the metal ion concentration of the processing liquid.

根據以上內容，可基於金屬離子濃度與比電阻值之相關關係，預先設定所容許之與金屬離子濃度對應之比電阻值之臨限值，藉由利用比電阻計140所獲得之比電阻值與該臨限值之對比，來檢測經樹脂塗佈之零件之異常(判定異常之有無)。 According to the above, based on the correlation between the metal ion concentration and the specific resistance value, the allowable threshold value of the specific resistance value corresponding to the metal ion concentration can be set in advance, and the specific resistance value obtained by using the specific resistance meter 140 and The comparison of the threshold values is used to detect abnormalities of resin-coated parts (determination of abnormalities).

另外，於判定零件存在異常之情形時，只要自輸出部164發出警告即可。藉此，可防止繼續使用非正常之零件之情況。此外，所謂自輸出部164發出之警告，可為顯示於顯示器之錯誤畫面，亦可為自揚聲器發出之警報音，亦可為警報燈之閃爍等。 In addition, when it is determined that the part has an abnormality, it is sufficient to issue a warning from the output unit 164. In this way, it is possible to prevent the continued use of abnormal parts. In addition, the warning from the output unit 164 may be an error screen displayed on the display, an alarm sound from the speaker, or a flashing alarm light.

圖6係表示設定此種判定基準(臨限值)時之處理之流程之流程圖。如圖6所示般，於新啟動裝置時或將零件替換成新產品時，在浸漬槽111中貯存處理液並於其中浸漬升降器130，於該狀態下使藉由電阻計140對浸漬槽111中所貯存之處理液之比電阻值進行測量 (步驟S101)。自比電阻計140獲得比電阻值之控制裝置160於檢查基準記憶部163中將該比電阻值之資料作為初始比電阻值而進行保存(步驟S102)。 FIG. 6 is a flowchart showing the flow of processing when setting such a determination criterion (threshold value). As shown in FIG. 6, when the device is newly started or when the part is replaced with a new product, the treatment liquid is stored in the dipping tank 111 and the lifter 130 is dipped therein. In this state, the dipping tank is controlled by the resistance meter 140 The specific resistance value of the treatment liquid stored in 111 is measured (Step S101). The control device 160 that obtains the specific resistance value from the specific resistance meter 140 stores the data of the specific resistance value as the initial specific resistance value in the inspection reference memory unit 163 (step S102).

然後，基於該初始比電阻值，將減去既定範圍所得之值設為樹脂剝落臨限值，並登錄至檢查基準記憶部163中(步驟S103)。 Then, based on the initial specific resistance value, the value obtained by subtracting the predetermined range is set as the resin peeling threshold value, and registered in the inspection reference storage unit 163 (step S103).

然而，自處理液所獲得之比電阻值越是為接近初始比電阻值之值，則對象零件之金屬溶出之程度越小。因此，例如於欲自發出警報起至進行零件之替換等應對為止具有充裕之時間等情形時，樹脂剝落臨限值可設為比較接近初始比電阻值之值。 However, the closer the specific resistance value obtained from the treatment liquid is to a value close to the initial specific resistance value, the less the metal of the target part is eluted. Therefore, for example, when there is sufficient time from when an alarm is issued to when parts are replaced, etc., the resin peeling threshold can be set to a value relatively close to the initial specific resistance value.

(檢查實施之時點) (Check the implementation time)

繼而，對零件之異常判定(即檢查)之實施之時點進行說明。基板處理裝置100中之基板W之通常動作之概略係將由搬送機械臂自外部接收之未處理之基板W之批次載置於升降器130，將其浸漬於貯存有處理液之浸漬槽111中既定時間後，由搬送機械臂接收，將已處理之批次搬出而返還至外部。因此，可如以下所示般以各種時點實施檢查。 Next, the timing of implementation of the abnormal judgment (ie inspection) of the parts will be described. The outline of the normal operation of the substrate W in the substrate processing apparatus 100 is to place a batch of unprocessed substrates W received from the outside by the transfer robot arm in the elevator 130 and immerse it in the immersion tank 111 storing the processing liquid After a predetermined time, it is received by the transfer robot and the processed batch is removed and returned to the outside. Therefore, the inspection can be performed at various timings as shown below.

圖7係表示實施零件之異常判定處理的時點之一例之流程圖。如圖7所示般，首先，於基板處理裝置100中，在開始批次單位之基板處理之前之空閒時間內，於浸漬槽111中貯存處理液，並浸漬未搭載基板之升降器130(步驟S111)。於該狀態下，藉由比電阻計140 測量處理液中之比電阻值，將該值輸入至控制裝置160(步驟S112)。其次，判定部161對檢查基準記憶部163中所保存之臨限值與所獲得之比電阻值進行比較(步驟S113)，於該比電阻值不低於臨限值之情形時，實施1批次量之基板處理(S114)。另一方面，於步驟S113中，於比電阻值低於臨限值之情形時，自輸出部164發出報告零件之異常之警告信號(步驟S115)。 FIG. 7 is a flowchart showing an example of the timing of performing abnormality determination processing of a part. As shown in FIG. 7, first, in the substrate processing apparatus 100, the processing liquid is stored in the immersion tank 111 in an idle time before starting the substrate processing of the batch unit, and the lifter 130 without the substrate is immersed (step S111). In this state, by the specific resistance meter 140 The specific resistance value in the processing liquid is measured, and the value is input to the control device 160 (step S112). Next, the determination unit 161 compares the threshold value stored in the inspection reference memory unit 163 with the obtained specific resistance value (step S113), and when the specific resistance value is not lower than the threshold value, one batch is implemented Subsequent substrate processing (S114). On the other hand, in step S113, when the specific resistance value is lower than the threshold value, a warning signal to report the abnormality of the component is issued from the output unit 164 (step S115).

圖8係表示實施零件之異常判定處理的時點之其他例之流程圖。如圖8所示般，於基板處理裝置100中，在1批次量之基板處理結束後，於浸漬槽111中貯存處理液，並浸漬升降器130(步驟S121、S122)。於該狀態下，藉由比電阻計140測量處理液中之比電阻值，將該值輸入至控制裝置160(步驟S123)。其次，由判定部161對檢查基準記憶部163中所保存之臨限值與所獲得之比電阻值進行比較(步驟S124)，於該比電阻值不低於臨限值之情形時，直接結束本流程。另一方面，於步驟S124中，於比電阻值低於臨限值之情形時，自輸出部164發出報告零件之異常之警告信號(步驟S125)。藉由以此種時點進行檢查，亦可對已經處理之批次驗證是否存在故障(不良之產生程度)。 FIG. 8 is a flowchart showing another example of the timing of performing abnormality determination processing of a part. As shown in FIG. 8, in the substrate processing apparatus 100, after the batch processing of the substrate is completed, the processing liquid is stored in the immersion tank 111, and the lifter 130 is immersed (steps S121, S122). In this state, the specific resistance value in the processing liquid is measured by the specific resistance meter 140, and the value is input to the control device 160 (step S123). Next, the judging unit 161 compares the threshold value stored in the inspection reference memory unit 163 with the obtained specific resistance value (step S124), and when the specific resistance value is not lower than the threshold value, it directly ends This process. On the other hand, in step S124, when the specific resistance value is lower than the threshold value, a warning signal to report the abnormality of the component is issued from the output unit 164 (step S125). By checking at this point in time, it is also possible to verify whether the batches that have been processed are faulty (the degree of occurrence of defects).

此外，於批次單位之基板處理之間隔較長地空開等之情形時，亦可為了以防萬一而在批次單位之基板處理之前與之後之任一時點皆實施零件之異常判定處理。此外，於所處理之基板中含有金屬成分之情形時，藉由在基板處理之前或之後進行零件之判定處理，可較在基板處理中進行零件之判定處理以更高之精度實施異常判 定處理。原因在於：於基板中含有金屬成分之情形時，即便在處理液中確認到金屬之溶出，亦無法區分是零件之金屬溶出者或是基板之金屬溶出者，因此難以進行基板處理中之(藉由用於處理基板之處理液進行之)零件之異常判定。 In addition, in the case where the substrate processing of the batch unit is opened at a long interval, etc., in order to prevent abnormalities, the abnormal judgment processing of the parts can be performed at any time before and after the substrate processing of the batch unit . In addition, in the case where the processed substrate contains a metal component, by performing the judgment processing of the parts before or after the substrate processing, the abnormal judgment can be performed with higher accuracy than the judgment processing of the parts during the substrate processing 定处理。 Processing. The reason is that, when the substrate contains a metal component, even if the metal elution is confirmed in the processing liquid, it is impossible to distinguish between the metal elution of the part and the metal elution of the substrate, so it is difficult to perform substrate processing (by The abnormality determination of the parts by the processing liquid for processing the substrate.

另外，於基板中不含金屬成分之情形時，於基板處理之執行中亦可進行零件之異常判定處理。即，於基板中不含金屬成分之情形時，以實際載置有基板W之狀態將升降器130浸漬於貯存有處理液之浸漬槽111中，在正在實施基板之清洗處理之過程中使用比電阻計140測量該處理液之比電阻值。 In addition, when there is no metal component in the substrate, the abnormality determination process of the parts can also be performed during the execution of the substrate process. That is, when there is no metal component in the substrate, the lifter 130 is immersed in the immersion tank 111 storing the processing liquid in a state where the substrate W is actually placed, and the ratio is used during the cleaning process of the substrate The resistance meter 140 measures the specific resistance value of the treatment liquid.

藉由如上所說明之實施例1之構成，於使用實施了樹脂塗佈之零件之基板處理裝置中，可在基板處理之待機時間內檢查上述零件之異常(樹脂剝落)，從而可提高裝置之運轉率。另外，於構成裝置之零件發生劣化之情形時，可迅速地檢測到該劣化並進行應對。 With the configuration of Embodiment 1 as described above, in a substrate processing apparatus using resin-coated parts, the abnormality of the above-mentioned parts (resin peeling) can be checked during the standby time of the substrate processing, so that the device can be improved Operating rate. In addition, when the components constituting the device are deteriorated, the deterioration can be quickly detected and dealt with.

(變形例) (Modification)

此外，在上述實施例1中，比電阻計140設置於處理槽110之浸漬槽111中，但亦可在除此以外之位置設置比電阻計140。例如，可於處理槽110之溢流槽112之底部設置，亦可於排液回收部150內設置。即，只要成為能夠對與檢查對象之零件接觸之液體中之比電阻值進行測量之構成即可。 In addition, in the first embodiment described above, the specific resistance meter 140 is provided in the immersion tank 111 of the treatment tank 110, but the specific resistance meter 140 may be provided at other positions. For example, it may be installed at the bottom of the overflow tank 112 of the processing tank 110, or may be installed in the drain recovery unit 150. In other words, it suffices to have a configuration capable of measuring the specific resistance value in the liquid in contact with the parts to be inspected.

<實施例2> <Example 2>

其次，對本發明之第2實施例進行說明。圖9係表示本實施例之基板處理裝置200之構成之概略剖視圖。基板處理裝置200係一片一片地處理半導體用途之基板W之所謂單片式之噴霧式清洗裝置。使圓形之矽基板W高速旋轉，將藥液及純水之液滴以霧狀噴霧至該基板W，去除基板W上之顆粒等。 Next, the second embodiment of the present invention will be described. 9 is a schematic cross-sectional view showing the structure of the substrate processing apparatus 200 of this embodiment. The substrate processing apparatus 200 is a so-called single-piece spray cleaning apparatus that processes the substrate W for semiconductor use one by one. The circular silicon substrate W is rotated at high speed, and droplets of the chemical liquid and pure water are sprayed onto the substrate W in a mist state to remove particles and the like on the substrate W.

如圖9所示般，基板處理裝置200於箱形之腔室210內具備作為主要元件而水平地保持基板W之旋轉夾頭220、用以對保持於旋轉夾頭220之基板W之上表面供給處理液之液滴之處理液噴嘴230、及包圍旋轉夾頭220之周圍之杯240。另外，除此以外亦具備控制裝置260、及未圖示之將基板W搬入至腔室210或自腔室210搬出之搬送機械臂。 As shown in FIG. 9, the substrate processing apparatus 200 includes a rotary chuck 220 as a main element for horizontally holding the substrate W in a box-shaped chamber 210, and a substrate W held on the rotary chuck 220 on the upper surface The processing liquid nozzle 230 that supplies the liquid droplets of the processing liquid, and the cup 240 surrounding the rotating chuck 220. In addition, it also includes a control device 260 and a transport robot arm (not shown) that transports the substrate W into or out of the chamber 210.

腔室210具備沿著鉛直方向包圍外周之側壁211、將由側壁211所包圍之空間之上側封閉之頂壁212、及將下側封閉之地板213。由側壁211、頂壁212及地板213所包圍之空間成為基板W之處理空間。另外，於腔室210之側壁211之一部分，設置有用以由搬送機械臂對腔室210搬入搬出基板W之搬入搬出口及開關該搬入搬出口之擋板(省略圖示)。 The chamber 210 includes a side wall 211 that surrounds the outer periphery in the vertical direction, a top wall 212 that closes the upper side of the space surrounded by the side wall 211, and a floor 213 that closes the lower side. The space surrounded by the side wall 211, the top wall 212, and the floor 213 becomes the processing space of the substrate W. In addition, a part of the side wall 211 of the chamber 210 is provided with a loading/unloading outlet for loading and unloading the substrate W into the chamber 210 by the transport robot and a shutter (not shown) for opening and closing the loading/unloading outlet.

於腔室210之頂壁212，設置有用以將空氣淨化後供給至腔室210內之處理空間的風扇過濾單元214。風扇過濾單元214具備吸入設置有基板處理裝置200之無塵室內之空氣而送出至腔室210內之風扇及過濾器，於腔室210內之處理空間形成經淨化之空氣之降 流。並且，由風扇過濾單元214送入之空氣於腔室210之下方，自例如為側壁211之一部分且設置於地板213之附近之排氣管215排出至裝置外。 The top wall 212 of the chamber 210 is provided with a fan filter unit 214 for purifying the air and supplying it to the processing space in the chamber 210. The fan filter unit 214 is equipped with a fan and a filter that sucks the air in the clean room where the substrate processing device 200 is installed and sends it out into the chamber 210, and forms a drop of purified air in the processing space in the chamber 210 flow. In addition, the air sent by the fan filter unit 214 is discharged below the chamber 210 from the exhaust pipe 215 which is a part of the side wall 211 and provided near the floor 213 to the outside of the device.

旋轉夾頭220具備固定於沿著鉛直方向延伸之旋轉軸224之上端的圓板形狀之旋轉基座221，於該旋轉基座221之下方設置有使旋轉軸224旋轉之旋轉馬達222。旋轉馬達222經由旋轉軸224使旋轉基座221於水平面上旋轉。此外，旋轉馬達222之驅動係藉由控制裝置260而進行。另外，以包圍旋轉馬達222及旋轉軸224之周圍之方式設置有外罩構件223。該外罩構件223之上端位於旋轉基座221之正下方，下端固定於腔室210之地板213。 The rotating chuck 220 includes a disk-shaped rotating base 221 fixed to the upper end of the rotating shaft 224 extending in the vertical direction, and a rotating motor 222 that rotates the rotating shaft 224 is provided below the rotating base 221. The rotation motor 222 rotates the rotation base 221 on a horizontal plane via the rotation shaft 224. In addition, the driving of the rotary motor 222 is performed by the control device 260. In addition, a cover member 223 is provided so as to surround the rotation motor 222 and the rotation shaft 224. The upper end of the cover member 223 is located directly below the rotating base 221, and the lower end is fixed to the floor 213 of the chamber 210.

上述旋轉基座221係鈦製之盤，表面由PCTFE、ECTFE、PFA、PTFE等樹脂塗佈。旋轉基座221之上表面成為與應保持之基板W之下表面整面對向，旋轉基座221之外徑變得比保持於旋轉夾頭220之圓形之基板W之直徑略大。並且，於旋轉基座221之上表面之周緣部，以向上方突出之方式設置有複數根(於本實施例中為6根)夾頭銷226。複數個夾頭銷226沿著與圓形之基板W之外周圓對應之圓周上空開均等間隔(於本實施例中以60°之間隔)配置。 The rotating base 221 is a titanium disk, and its surface is coated with resins such as PCTFE, ECTFE, PFA, and PTFE. The upper surface of the rotating base 221 faces the lower surface of the substrate W to be held, and the outer diameter of the rotating base 221 becomes slightly larger than the diameter of the circular substrate W held by the rotating chuck 220. In addition, a plurality of (six in this embodiment) chuck pins 226 are provided on the peripheral portion of the upper surface of the rotating base 221 so as to protrude upward. The plurality of chuck pins 226 are arranged at regular intervals along the circumference corresponding to the outer circumference of the circular substrate W (at 60° intervals in this embodiment).

複數個夾頭銷226可藉由將基板W之周緣自側方加以固持，而於旋轉基座221之上方將基板W以接近其之上表面之水平姿勢保持。旋轉馬達222於旋轉夾頭220保持著基板W之狀態下使旋轉軸224旋轉，藉此可繞通過基板W之中心之沿著鉛直方向之旋轉軸線X 使基板W旋轉。 The plurality of chuck pins 226 can hold the periphery of the substrate W from the side, and hold the substrate W in a horizontal posture close to its upper surface above the rotating base 221. The rotary motor 222 rotates the rotary shaft 224 with the rotary chuck 220 holding the substrate W, whereby the rotation axis X along the vertical direction passing through the center of the substrate W can be rotated The substrate W is rotated.

包圍旋轉夾頭220之杯240具備圓筒狀之外壁241、於外壁241之內側包圍旋轉夾頭220之防濺板242、使防濺板242於鉛直方向升降之板升降單元(省略圖示)、及排液回收部245。外壁241固定於腔室210之地板213，防濺板242以能夠相對於杯240之外壁241升降之方式設置。 The cup 240 surrounding the rotating chuck 220 includes a cylindrical outer wall 241, a splash plate 242 surrounding the rotating chuck 220 inside the outer wall 241, and a plate lifting unit (not shown) for raising and lowering the splash plate 242 in the vertical direction 、和排液储部245. The outer wall 241 is fixed to the floor 213 of the chamber 210, and the splash plate 242 is provided so as to be able to rise and fall relative to the outer wall 241 of the cup 240.

排液回收部245設置於杯240之底部，並連接於杯240外之處理液回收機構(省略圖示)。並且，於排液回收部245內配置有比電阻計250。比電阻計250對回收至排液回收部245之處理液或下述腔室內清洗液之比電阻值進行測量，並將該值輸入至控制裝置260。 The drainage recovery part 245 is provided at the bottom of the cup 240, and is connected to a processing liquid recovery mechanism (not shown) outside the cup 240. In addition, a specific resistance meter 250 is arranged in the drain recovery unit 245. The specific resistance meter 250 measures the specific resistance value of the processing liquid recovered to the discharge liquid recovery part 245 or the cleaning liquid in the chamber described below, and inputs the value to the control device 260.

防濺板242具備：具有朝向旋轉軸線X向斜上方延伸之錐形側面之筒狀之傾斜部243；及自傾斜部243之下端部向下方延伸之圓筒狀之引導部244。傾斜部243之上端成為具有大於基板W及旋轉基座221之內徑之圓環狀，相當於防濺板242之上端242a。 The splash plate 242 includes: a cylindrical inclined portion 243 having a tapered side extending obliquely upward toward the rotation axis X; and a cylindrical guide portion 244 extending downward from the lower end of the inclined portion 243. The upper end of the inclined portion 243 has an annular shape having an inner diameter larger than that of the substrate W and the rotating base 221, and corresponds to the upper end 242a of the splash guard 242.

板升降單元於防濺板242之上端242a位於較基板W更靠近下方之下位置、與防濺板242之上端242a位於較基板W更靠近上方之上位置之間，使防濺板242升降(於圖1中，防濺板242配置於上位置)。此外，作為此種升降機構，可採用例如滾珠螺桿機構或氣缸等公知之各種機構，因此省略詳細說明。 The plate lifting unit is located between the upper end 242a of the splash plate 242 and the upper end 242a of the splash plate 242 and the upper end 242a of the splash plate 242 is located above and above the substrate W, so that the splash plate 242 moves up and down In FIG. 1, the splash guard 242 is arranged at the upper position). In addition, as such an elevating mechanism, various known mechanisms such as a ball screw mechanism, a cylinder, or the like can be used, so a detailed description is omitted.

防濺板242於基板W之清洗處理中(即基板W在旋轉中)配置於上位置，用其內周面接擋自基板W向其周圍飛散之處理液。於未進行基板W之清洗處理之期間內，防濺板242於下位置成待機狀態，此時，於搬送機械臂(省略圖示)與旋轉夾頭220之間進行基板W之交接。此外，藉由防濺板242進行接擋等，而集聚於杯底部之處理液經由排液回收部245自杯240排出。 The splash prevention plate 242 is disposed at an upper position during the cleaning process of the substrate W (that is, the substrate W is rotating), and uses its inner peripheral surface to block the processing liquid scattered from the substrate W to the surroundings. While the substrate W is not being cleaned, the splash guard 242 is in a standby state at the lower position. At this time, the substrate W is transferred between the transfer robot (not shown) and the rotary chuck 220. In addition, the splash plate 242 is used for blocking and the like, and the processing liquid collected at the bottom of the cup is discharged from the cup 240 through the drain recovery part 245.

處理液噴嘴230係於噴嘴支臂232之前端安裝噴嘴頭231而構成。噴嘴支臂232之基端側連接於噴嘴基台(省略圖示)，噴嘴基台係以藉由馬達(省略圖示)而能夠繞沿著鉛直方向之軸旋動之方式構成。藉由噴嘴基台旋動，而處理液噴嘴230於旋轉夾頭220之上方之處理液噴出位置與較杯240更靠外側之待機位置之間沿著水平方向呈圓弧狀移動。 The processing liquid nozzle 230 is formed by attaching a nozzle head 231 to the front end of the nozzle arm 232. The base end side of the nozzle arm 232 is connected to a nozzle base (not shown), and the nozzle base is configured to be rotatable around an axis along the vertical direction by a motor (not shown). When the nozzle base rotates, the processing liquid nozzle 230 moves in a horizontal arc along the horizontal direction between the processing liquid ejection position above the rotary chuck 220 and the standby position outside the cup 240.

上表面處理液噴嘴230以被供給處理液(例如SPM)及壓縮氣體之方式構成，且將氣液混合之液滴自噴嘴頭231向保持於旋轉夾頭220之基板W噴出。另外，藉由噴嘴基台之旋動，使得處理液噴嘴230能夠於旋轉基座221之上表面上方擺動，從而可一面將液滴噴出至基板W。 The upper surface treatment liquid nozzle 230 is configured to be supplied with a treatment liquid (for example, SPM) and compressed gas, and discharges droplets mixed with gas and liquid from the nozzle head 231 toward the substrate W held by the rotary chuck 220. In addition, the rotation of the nozzle base enables the processing liquid nozzle 230 to swing above the upper surface of the rotating base 221 so that droplets can be ejected onto the substrate W at the same time.

比電阻計250具備對液體之比電阻值進行測量之感測器，該感測器係在液體被回收至排液回收部245內時能夠接觸地(較理想為以浸漬之方式)設置於該液體中。 The specific resistance meter 250 is provided with a sensor for measuring the specific resistance value of the liquid. The sensor is provided in contact with this liquid (preferably by dipping) when the liquid is recovered in the drain recovery part 245 In the liquid.

根據上述構成，藉由比電阻計250測量排液中之比電阻值，該所測量之值被輸入至控制裝置260。此外，由於液中之比電阻值與金屬(離子)濃度之間存在密切之相關關係，故而藉由獲得比電阻值，可掌握排液中之金屬成分之量。 According to the above configuration, the specific resistance value in the discharged liquid is measured by the specific resistance meter 250, and the measured value is input to the control device 260. In addition, since there is a close correlation between the specific resistance value in the liquid and the metal (ion) concentration, the amount of the metal component in the discharged liquid can be grasped by obtaining the specific resistance value.

作為控制裝置260之硬體之構成與一般之電腦相同。即，成為具備鍵盤等輸入部、顯示器等輸出部、CPU、ROM、RAM及大容量記憶裝置等之構成。藉由使控制裝置260之CPU執行既定之處理程式，而由控制裝置260控制基板處理裝置200之各動作機構，進行基板處理裝置200中之處理。 The configuration of the hardware as the control device 260 is the same as that of a general computer. That is, it is configured to include an input unit such as a keyboard, an output unit such as a display, a CPU, ROM, RAM, a mass storage device, and the like. The CPU of the control device 260 executes a predetermined processing program, and the control device 260 controls each operation mechanism of the substrate processing device 200 to perform processing in the substrate processing device 200.

繼而，對控制裝置260之有關零件檢查之功能進行說明。圖10係表示比電阻計250及控制裝置260之有關零件檢查之功能之方塊圖。圖10所示之判定部261係藉由使控制裝置260之CPU執行既定之處理程式而於控制裝置260內實現之功能處理部。詳細內容將於後文敍述，判定部261係基於藉由比電阻計所算出之比電阻值，關於構成基板處理裝置200之具有樹脂塗層之零件進行異常有無判定處理(即，零件之檢查)。 Next, the function of the parts inspection of the control device 260 will be described. FIG. 10 is a block diagram showing the functions of the specific resistance check of the specific resistance meter 250 and the control device 260. The determination unit 261 shown in FIG. 10 is a function processing unit implemented in the control device 260 by causing the CPU of the control device 260 to execute a predetermined processing program. The details will be described later. Based on the specific resistance value calculated by the specific resistance meter, the determination unit 261 performs abnormality determination processing (ie, inspection of parts) on the resin-coated parts constituting the substrate processing apparatus 200.

檢查基準記憶部263係由上述RAM或磁碟所構成，將藉由判定部261進行之判定中所使用之判定臨限值，以與處理裝置之規格、處理液之種類、處理液之供給條件等條件分別對應之態樣進行記憶。 The inspection reference memory section 263 is composed of the above-mentioned RAM or magnetic disk, and the judgment threshold value used in the judgment by the judgment section 261 depends on the specifications of the processing apparatus, the type of processing liquid, and the supply conditions of the processing liquid The corresponding conditions are memorized correspondingly.

輸出部264輸出包含檢查結果之各種資訊。資訊之輸出目的地 典型而言為顯示器等顯示裝置，亦可對印刷裝置輸出資訊，或自揚聲器輸出訊息或警報，或向使用者之終端以電子郵件等形式發送訊息，或對外部之電腦發送資訊。 The output unit 264 outputs various information including the inspection result. Information output destination Typically, it is a display device such as a display. It can also output information to a printing device, or output a message or alarm from a speaker, or send a message to the user's terminal in the form of e-mail, or send information to an external computer.

(關於劣化判定處理方法) (About deterioration judgment processing method)

其次，對藉由上述判定部261進行之零件之劣化判定處理進行說明。如上所述般，判定部261係關於檢查對象零件是否存在異常(樹脂剝落)，基於藉由比電阻計250所獲得之處理液之比電阻值進行檢查。即，若金屬成分溶出至處理液中，則處理液之金屬離子濃度上升，與其成反比例地，處理液之比電阻值減少。 Next, the deterioration judgment process of the parts by the judgment unit 261 will be described. As described above, the determination unit 261 checks whether the inspection target component is abnormal (resin peeling) based on the specific resistance value of the processing liquid obtained by the specific resistance meter 250. That is, when the metal component is eluted into the processing liquid, the metal ion concentration of the processing liquid increases, and inversely proportional thereto, the specific resistance value of the processing liquid decreases.

於本實施例中，進而以成為檢查對象之旋轉基座221為例進行說明。如上所述，旋轉基座221為鈦製且於表面實施有樹脂塗佈，但該塗佈因藥液而慢慢劣化，發生樹脂塗佈剝落之現象。如此，則鈦(即金屬成分)自塗佈之剝落部分露出。若成為此種狀態，則在處理液與旋轉基座221接觸時，在該處理液中溶出金屬成分，處理液之金屬離子濃度上升。如此，則與其成反比例地，處理液之比電阻值減少。 In this embodiment, the rotating base 221 to be inspected will be described as an example. As described above, the spin base 221 is made of titanium and a resin coating is applied to the surface. However, this coating gradually deteriorates due to the chemical solution, and the resin coating peels off. In this way, titanium (that is, the metal component) is exposed from the peeled portion of the coating. In this state, when the processing liquid comes into contact with the rotating base 221, a metal component is eluted in the processing liquid, and the metal ion concentration of the processing liquid increases. In this way, the specific resistance value of the treatment liquid decreases in inverse proportion to it.

根據以上內容，可基於金屬離子濃度與比電阻值之相關關係，預先設定所容許之與金屬離子濃度對應之比電阻值之臨限值，藉由利用比電阻計250所獲得之比電阻值與既定臨限值之對比，來檢測經樹脂塗佈之零件之異常(判定異常之有無)。 Based on the above, based on the correlation between the metal ion concentration and the specific resistance value, the allowable threshold value of the specific resistance value corresponding to the metal ion concentration can be set in advance, and the specific resistance value obtained by using the specific resistance meter 250 and Comparison of established thresholds to detect abnormalities of resin-coated parts (determination of abnormalities).

另外，於判定零件存在異常之情形時，只要自輸出部264發出警告即可。藉此，可防止繼續使用非正常之零件之情況。此外，所謂自輸出部264發出之警告，可為顯示於顯示器之錯誤畫面，亦可為自揚聲器發出之警報音，亦可為警報燈之閃爍等。 In addition, when it is determined that the component has an abnormality, it is sufficient to issue a warning from the output unit 264. In this way, it is possible to prevent the continued use of abnormal parts. In addition, the warning from the output unit 264 may be an error screen displayed on the display, an alarm sound from the speaker, or a flashing alarm light.

圖11係表示在設定此種判定基準(臨限值)時之處理之流程的流程圖。如圖11所示般，於新啟動裝置時或將零件替換成新產品時，執行使用清洗液對腔室210內進行清洗之腔室清洗配方(recipe)(步驟S201)。此時，亦對旋轉基座221充分地注入清洗液。腔室清洗所使用之清洗液由於經由杯240內之排液回收部245而被回收，故而此時藉由比電阻計250對通過排液回收部245之排液之比電阻值進行測量(步驟S202)。自比電阻計250獲得比電阻值之控制裝置260於檢查基準記憶部263中將該比電阻值之資料作為初始比電阻值而保存(步驟S203)。 FIG. 11 is a flowchart showing the flow of processing when setting such a determination criterion (threshold value). As shown in FIG. 11, when a device is newly started or when a part is replaced with a new product, a chamber cleaning recipe for cleaning the chamber 210 using a cleaning liquid is performed (step S201). At this time, the rotating base 221 is also sufficiently filled with the cleaning liquid. The cleaning liquid used for chamber cleaning is recovered through the liquid recovery part 245 in the cup 240, so at this time, the specific resistance value of the liquid discharged through the liquid recovery part 245 is measured by the specific resistance meter 250 (step S202 ). The control device 260 that obtains the specific resistance value from the specific resistance meter 250 saves the data of the specific resistance value as the initial specific resistance value in the inspection reference memory unit 263 (step S203).

並且，將基於該初始比電阻值減去所容許之誤差之量所獲得之值設為樹脂剝落臨限值，並登錄至檢查基準記憶部263中(步驟S204)。 Then, the value obtained based on the initial specific resistance value minus the allowable error is set as the resin peeling threshold value, and is registered in the inspection reference storage unit 263 (step S204).

(檢查實施之時點) (Check the implementation time)

繼而，對零件之異常判定(即檢查)之實施之時點進行說明。圖12係表示實施零件之異常判定處理的時點之一例之流程圖。如圖12所示般，首先於基板處理裝置200中在開始基板處理之前，執行腔室清洗配方(步驟S211)，藉由比電阻計250測量該清洗液之排液之比 電阻值(步驟S212)。然後，判定部261對所測量之比電阻值、與檢查基準記憶部263中所保存之臨限值進行比較(步驟S213)，於不低於臨限值之情形時，實施基板處理(步驟S214)。並且，若1片基板處理結束，則又返回步驟S211，重複該處理(步驟S215)。另一方面，於步驟S213中，於所測量之比電阻值低於臨限值之情形時，自輸出部264發送報告零件之劣化之警告信號(步驟S216)。 Next, the timing of implementation of the abnormal judgment (ie inspection) of the parts will be described. FIG. 12 is a flowchart showing an example of the timing of performing abnormality determination processing of a part. As shown in FIG. 12, first, in the substrate processing apparatus 200, before starting the substrate processing, the chamber cleaning recipe is executed (step S211), and the ratio of the discharge of the cleaning liquid is measured by the specific resistance meter 250 Resistance value (step S212). Then, the determination unit 261 compares the measured specific resistance value with the threshold value stored in the inspection reference memory unit 263 (step S213), and when not less than the threshold value, performs substrate processing (step S214) ). In addition, when the processing of one substrate is completed, the process returns to step S211 to repeat the process (step S215). On the other hand, in step S213, when the measured specific resistance value is lower than the threshold value, a warning signal reporting the deterioration of the component is sent from the output unit 264 (step S216).

另外，亦可不針對每一片基板實施檢查，而於基板之批次單位之處理之前後實施零件之異常判定處理。即，於基板處理裝置200中，在開始批次單位之基板處理之前的空閒時間內執行腔室清洗配方，測量清洗排液之比電阻值。然後，控制裝置160之判定部161對檢查基準記憶部163中保存之臨限值與所獲得之比電阻值進行比較，於比電阻值不低於臨限值之情形時，實施1批次量之基板處理。另一方面，於比電阻值低於臨限值之情形時，自輸出部164發送報告零件之異常之警告信號。 In addition, instead of performing inspection for each substrate, an abnormality determination process of parts may be performed before and after processing in batch units of the substrate. That is, in the substrate processing apparatus 200, the chamber cleaning recipe is executed in an idle time before starting the substrate processing in batch units, and the specific resistance value of the cleaning and discharging liquid is measured. Then, the determination unit 161 of the control device 160 compares the threshold value stored in the inspection reference storage unit 163 with the obtained specific resistance value, and when the specific resistance value is not lower than the threshold value, one batch Substrate processing. On the other hand, in the case where the specific resistance value is lower than the threshold value, a warning signal to report the abnormality of the component is sent from the output unit 164.

另外，於處理對象之基板W不含金屬成分之情形時，亦可在基板處理之執行中進行零件之異常判定處理。 In addition, when the substrate W to be processed does not contain a metal component, an abnormality determination process of parts may be performed during the execution of the substrate process.

<其他> <other>

此外，上述各實施例僅例示性地說明本發明，本發明並不限於上述具體態樣。本發明可於其技術思想之範圍內進行各種變形。例如，可將上述實施例1與實施例2之技術分別進行組合、或替換而使用。具體而言，於上述各實施例中，配置於裝置中之比電阻計為一 個，但亦可使用複數個比電阻計來測量多處之比電阻值。藉此，可實施精度更高之檢查。 In addition, the above-mentioned embodiments only exemplarily illustrate the present invention, and the present invention is not limited to the above-mentioned specific aspects. The present invention can be variously modified within the scope of its technical idea. For example, the techniques of the above-mentioned Embodiment 1 and Embodiment 2 may be combined or replaced, respectively, and used. Specifically, in the above embodiments, the specific resistance arranged in the device is calculated as one However, a plurality of specific resistance meters can also be used to measure specific resistance values at multiple locations. With this, inspections with higher accuracy can be implemented.

另外，於設定用以檢查之臨限值時，亦可根據檢查對象零件之種類、供配置檢查對象零件之場所、裝置之用途(所使用之藥液)等檢查條件之不同而使用資料表進行設定。 In addition, when setting the threshold for inspection, the data table can also be used according to the different inspection conditions such as the type of inspection target parts, the location for configuring the inspection target parts, the purpose of the device (the chemical solution used), etc. set up.

100‧‧‧基板檢查裝置 100‧‧‧Substrate inspection device

110‧‧‧處理槽 110‧‧‧Treatment tank

111‧‧‧浸漬槽 111‧‧‧Immersion tank

112‧‧‧溢流槽 112‧‧‧Overflow tank

120‧‧‧處理液噴出噴嘴 120‧‧‧Processing liquid spray nozzle

125‧‧‧處理液供給源 125‧‧‧Process liquid supply source

130‧‧‧升降器 130‧‧‧Lift

131‧‧‧升降驅動源 131‧‧‧Elevating drive source

132‧‧‧升降器臂 132‧‧‧lifter arm

133‧‧‧板部 133‧‧‧ Board Department

140‧‧‧比電阻計 140‧‧‧specific resistance meter

150‧‧‧排液回收部 150‧‧‧Drainage Recycling Department

160‧‧‧控制裝置 160‧‧‧Control device

W‧‧‧基板 W‧‧‧Substrate

Claims (19)

一種基板處理裝置，其係藉由處理液進行基板處理者；其特徵在於，具有對構成該基板處理裝置之經樹脂塗佈之金屬性零件之劣化進行檢查之檢查手段，上述檢查手段具備：測量手段，其係對與檢查對象之零件接觸之液體中之既定金屬濃度進行測量；及劣化判定手段，其係藉由利用該測量手段所測量之金屬濃度與既定臨限值之對比，來判定檢查對象之零件之劣化程度。 A substrate processing apparatus which performs substrate processing with a processing liquid; characterized in that it has an inspection means for inspecting the deterioration of resin-coated metal parts constituting the substrate processing apparatus, the inspection means comprising: measuring Means, which measures the predetermined metal concentration in the liquid in contact with the parts to be inspected; and degradation judgment means, which determines the inspection by comparing the measured metal concentration with the predetermined threshold using the measurement method The degree of deterioration of the target parts. 如請求項1之基板處理裝置，其中，上述測量手段係對上述液體之排液中之上述金屬濃度進行測量。 The substrate processing apparatus according to claim 1, wherein the measurement means measures the concentration of the metal in the discharge of the liquid. 如請求項1或2之基板處理裝置，其中，上述液體包含清洗上述基板處理裝置內部之裝置清洗液。 The substrate processing apparatus according to claim 1 or 2, wherein the liquid includes a device cleaning liquid for cleaning the inside of the substrate processing apparatus. 如請求項1或2之基板處理裝置，其中，上述液體包含上述處理液。 The substrate processing apparatus according to claim 1 or 2, wherein the liquid includes the processing liquid. 如請求項4之基板處理裝置，其中，上述基板處理裝置進而具有貯存上述處理液之處理液槽，上述測量手段設置於該處理液槽內。 The substrate processing apparatus according to claim 4, wherein the substrate processing apparatus further includes a processing liquid tank storing the processing liquid, and the measurement means is provided in the processing liquid tank. 如請求項1或2之基板處理裝置，其中，上述基板處理裝置為批次式裝置，上述檢查對象之零件為升降器。 The substrate processing apparatus according to claim 1 or 2, wherein the substrate processing apparatus is a batch type apparatus, and the part to be inspected is a lifter. 如請求項1或2之基板處理裝置，其中，上述基板處理裝置為單片式裝置，上述檢查對象之零件為旋轉夾頭。 The substrate processing apparatus according to claim 1 or 2, wherein the substrate processing apparatus is a monolithic apparatus, and the part to be inspected is a rotary chuck. 如請求項1或2之基板處理裝置，其中，上述既定臨限值係根據包含基板處理裝置之規格、基板處理之製程、液體之供給條件中之至少一者之測量條件的不同而設定。 The substrate processing apparatus according to claim 1 or 2, wherein the predetermined threshold value is set according to a measurement condition including at least one of a specification of the substrate processing apparatus, a process of substrate processing, and a supply condition of liquid. 如請求項1或2之基板處理裝置，其中，上述測量手段為比電阻計。 The substrate processing apparatus according to claim 1 or 2, wherein the measurement means is a specific resistance meter. 如請求項1或2之基板處理裝置，其進而具有輸出藉由上述劣化判定手段所判定之劣化程度之輸出手段，上述輸出手段於藉由上述劣化判定手段所判定之劣化程度超過既定基準之情形時，輸出警告信號。 The substrate processing apparatus according to claim 1 or 2, further has output means for outputting the degree of deterioration determined by the above-mentioned deterioration determination means, when the degree of deterioration determined by the above-mentioned deterioration determination means exceeds a predetermined standard , A warning signal is output. 一種基板處理裝置之零件檢查方法，其係對構成使用處理液進行基板處理之基板處理裝置的經樹脂塗佈之零件之劣化進行檢查之方法；其特徵在於具有：液體供給步驟，其係將液體供給至裝置中，使該液體與檢查對象之零件接觸；測量步驟，其係對與該檢查對象之零件接觸之液體中的既定金屬濃度進行測量；及劣化判定步驟，其係基於相對於該所測量之金屬濃度之既定臨限值，對檢查對象之零件之劣化程度進行判定。 A part inspection method for a substrate processing apparatus, which is a method for inspecting the deterioration of resin-coated parts constituting a substrate processing apparatus that uses a processing liquid to perform substrate processing; it is characterized by having: a liquid supply step, which is a liquid Supplied to the device to bring the liquid into contact with the parts to be inspected; the measuring step, which measures the predetermined metal concentration in the liquid in contact with the parts to be inspected; and the deterioration judgment step, which is based on The predetermined threshold of the measured metal concentration determines the degree of deterioration of the parts to be inspected. 如請求項11之基板處理裝置之零件檢查方法，其中，上述既定臨限值係根據包含基板處理裝置之規格、基板處理之製程、液體之供給條件中之至少一者的測量條件之不同而設定。 The method for inspecting parts of a substrate processing apparatus according to claim 11, wherein the predetermined threshold value is set according to a measurement condition including at least one of a specification of the substrate processing apparatus, a process of substrate processing, and a supply condition of liquid . 如請求項11或12之基板處理裝置之零件檢查方法，其進而具有： 判定結果輸出步驟，其係輸出上述劣化判定步驟中所判定之零件之劣化程度。 If the part inspection method of the substrate processing apparatus of claim 11 or 12, it further has: The determination result output step is to output the degree of deterioration of the parts determined in the above-mentioned deterioration determination step. 如請求項11或12之基板處理裝置之零件檢查方法，其進而具有：警告步驟，其係於上述劣化判定步驟中所判定之劣化程度超過既定基準之情形時，輸出警告信號。 The component inspection method of the substrate processing apparatus according to claim 11 or 12, further includes: a warning step, which outputs a warning signal when the degree of deterioration determined in the above-mentioned deterioration determination step exceeds a predetermined standard. 如請求項11或12之基板處理裝置之零件檢查方法，其中，上述測量步驟中之上述既定金屬濃度之測量係藉由對上述液體中之比電阻進行測量而進行。 The component inspection method of the substrate processing apparatus according to claim 11 or 12, wherein the measurement of the predetermined metal concentration in the measurement step is performed by measuring the specific resistance in the liquid. 如請求項11或12之基板處理裝置之零件檢查方法，其中，上述各步驟係於以批次單位之上述基板處理之前及/或之後實施。 A part inspection method of a substrate processing apparatus according to claim 11 or 12, wherein the above steps are performed before and/or after the above substrate processing in batch units. 如請求項11或12之基板處理裝置之零件檢查方法，其中，上述各步驟係每當結束一上述基板處理時實施。 The method for inspecting parts of a substrate processing apparatus according to claim 11 or 12, wherein the above steps are performed every time the above substrate processing is ended. 如請求項11或12之基板處理裝置之零件檢查方法，其中，上述各步驟係於基板處理中實施。 The method for inspecting parts of a substrate processing apparatus according to claim 11 or 12, wherein the above steps are implemented in substrate processing. 如請求項11或12之基板處理裝置之零件檢查方法，其中，上述液體為上述基板處理所使用之處理液、及/或清洗上述基板處理裝置內部之裝置清洗液。 The component inspection method of a substrate processing apparatus according to claim 11 or 12, wherein the liquid is a processing liquid used for the substrate processing, and/or a device cleaning liquid for cleaning the inside of the substrate processing apparatus.
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