JP2016207838A - Substrate processing apparatus and substrate processing method - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a substrate processing apparatus capable of detecting an abnormality in a discharge state of a process liquid, and a substrate processing method.SOLUTION: The process liquid is discharged from a process liquid nozzle. A load caused by the process liquid discharged from the process liquid nozzle is detected by a load detection part 220. A temporal change of the load that is detected by the load detection part 220 is acquired by a load change acquisition part 422. Based on the temporal change of the load that is acquired by the load change acquisition part 422, it is discriminated by a discrimination part 425 whether the discharge state of the process liquid from the process liquid nozzle is normal.SELECTED DRAWING: Figure 5

Description

  The present invention relates to a substrate processing apparatus and a substrate processing method for processing a substrate using a processing liquid.

  In the substrate processing apparatus, a substrate supported substantially horizontally is rotated by a motor. In this state, the processing liquid is discharged from the nozzle to the substantially central portion of the upper surface of the substrate. In the substrate processing using such a processing liquid, it is preferable to set the discharge amount of the processing liquid to the minimum necessary in order to reduce the cost while making the film thickness of the processing liquid on the substrate uniform. Therefore, measurement for confirming whether or not the discharge amount of the processing liquid is normal may be performed before the substrate processing.

  The liquid supply apparatus described in Patent Document 1 is provided with a liquid discharge amount inspection mode. In the liquid discharge amount inspection mode, the weight of a container prepared in advance is measured. Next, a resist solution is discharged from the resist nozzle into the container. Thereby, the resist solution is stored in the container. Thereafter, the weight of the container in which the resist solution is stored is measured. By calculating the difference in weight of the container before and after the resist solution is stored, the discharge amount of the resist solution is measured.

JP 2007-329165 A

  According to the conventional inspection method described in Patent Document 1, the amount of the processing liquid stored in the container can be measured. However, abnormalities may occur in the discharge state of the processing liquid from the resist nozzle due to, for example, air mixed into the processing liquid remaining in the resist nozzle and adhesion of foreign matter into the discharge port of the resist nozzle. With the conventional inspection method described above, it is impossible to detect an abnormality in the discharge state of the processing liquid.

  An object of the present invention is to provide a substrate processing apparatus and a substrate processing method capable of detecting an abnormality in a discharge state of a processing liquid.

  (1) A substrate processing apparatus according to a first aspect of the present invention is a substrate processing apparatus that performs processing on a substrate using a processing liquid, a processing liquid nozzle that discharges the processing liquid, and a processing liquid that is discharged from the processing liquid nozzle. And a determination unit that determines whether or not the discharge state of the processing liquid from the processing liquid nozzle is normal based on a time change of the load detected by the load detection unit. .

  In this substrate processing apparatus, the processing liquid is discharged from the processing liquid nozzle. A load due to the processing liquid discharged from the processing liquid nozzle is detected. Here, the time change of the load when the treatment liquid discharge state from the treatment liquid nozzle is abnormal is different from the time change of the load when the treatment liquid discharge state from the treatment liquid nozzle is normal. Therefore, based on the detected time change of the load, it is determined whether or not the discharge state of the processing liquid from the processing liquid nozzle is normal. Thereby, the abnormality of the discharge state of the processing liquid can be detected.

  (2) The substrate processing apparatus further includes a first storage unit that stores, as a reference time change, a time change in the load due to the processing liquid when the discharge state of the processing liquid from the processing liquid nozzle is normal. Whether the discharge state of the processing liquid from the processing liquid nozzle is normal based on the comparison result between the time change of the load detected by the load detection unit and the reference time change stored in the first storage unit May be determined.

  In this case, it is possible to easily determine whether or not the discharge state of the processing liquid from the processing liquid nozzle is normal based on the reference time change stored in the first storage unit.

  (3) The first storage unit may store the time change of the load detected by the load detection unit as a reference time change.

  In this case, the time change of the newly detected load is compared with the time change of the previously detected load. As a result, it is possible to determine whether or not a change has occurred in the discharge state of the newly discharged processing liquid compared to the previous discharge state of the processing liquid.

  (4) The load detection unit includes a plurality of load detection elements that respectively detect loads due to the processing liquid ejected from the processing liquid nozzle, and the determination unit is configured to detect changes in time of the loads detected by the plurality of load detection elements. Based on this, it may be determined whether or not the discharge state of the processing liquid from the processing liquid nozzle is normal.

  In this case, it is possible to determine whether or not the direction or distribution of the treatment liquid discharged from the treatment liquid nozzle is normal based on the time change of the load corresponding to the plurality of load detection elements. As a result, it is possible to detect an abnormality in the discharge direction or distribution of the processing liquid.

  (5) The substrate processing apparatus further includes a load integration unit that calculates an integrated amount of the load in a predetermined period based on a time change of the load detected by the load detection unit, and the determination unit is calculated by the load integration unit. It may be determined whether or not the discharge amount of the processing liquid from the processing liquid nozzle is normal based on the accumulated load amount.

  In this case, it is determined whether or not the discharge amount of the processing liquid is normal based on the integrated amount of load in the predetermined period. Thereby, an abnormality in the discharge amount of the processing liquid can be detected.

  (6) The substrate processing apparatus further includes a second storage unit that stores, as a reference integrated amount, an integrated amount of the load when the discharge amount of the processing liquid from the processing liquid nozzle is normal, and the determination unit includes the integrated load Whether or not the discharge amount of the processing liquid from the processing liquid nozzle is normal is determined based on a comparison result between the integrated load amount calculated by the unit and the reference integrated amount stored in the second storage unit. May be.

  In this case, it is possible to easily determine whether or not the discharge amount of the processing liquid is normal based on the reference integrated amount stored in the second storage unit.

  (7) The second storage unit further stores a relationship between the integrated load amount and the discharge amount of the processing liquid from the processing liquid nozzle, and the substrate processing apparatus stores the integrated load amount calculated by the load integrating unit. And a discharge amount acquisition unit that acquires the discharge amount of the processing liquid from the processing liquid nozzle based on the relationship stored in the second storage unit.

  In this case, the user can numerically recognize the discharge amount of the processing liquid from the processing liquid nozzle.

  (8) The substrate processing apparatus may further include a notification unit that notifies the user of the determination result by the determination unit.

  In this case, the user can easily recognize the determination result as to whether or not the discharge state of the processing liquid from the processing liquid nozzle is normal.

  (9) The substrate processing apparatus further includes a storage unit disposed on the load detection unit, the processing liquid nozzle is provided so that the processing liquid can be discharged into the storage unit, and the load detection unit is discharged into the storage unit. You may detect the load by a process liquid. In this case, the treatment liquid is prevented from adhering to the detection surface of the load detection unit.

  (10) The substrate processing apparatus may further include a cleaning nozzle provided so that a cleaning liquid for cleaning the storage unit can be discharged into the storage unit.

  In this case, the reservoir is cleaned by discharging the cleaning liquid from the cleaning nozzle into the reservoir. Therefore, the maintenance of the substrate processing apparatus can be made easier.

  (11) The load detection unit may be provided in the treatment liquid nozzle so as to be able to detect a load caused by the treatment liquid passing through the treatment liquid nozzle.

  In this case, it is possible to determine whether or not the discharge state of the processing liquid from the processing liquid nozzle is normal during the processing of the substrate using the processing liquid. Thereby, it is possible to detect an abnormality in the discharge state of the processing liquid generated during the processing of the substrate.

  (12) A substrate processing method according to a second aspect of the present invention is a substrate processing method for processing a substrate using a processing liquid, the step of discharging the processing liquid from the processing liquid nozzle, and the discharging from the processing liquid nozzle The method includes a step of detecting a load due to the processing liquid, and a step of determining whether or not the discharge state of the processing liquid from the processing liquid nozzle is normal based on a change with time of the detected load.

  According to this substrate processing method, the processing liquid is discharged from the processing liquid nozzle. A load due to the processing liquid discharged from the processing liquid nozzle is detected. Here, the time change of the load when the treatment liquid discharge state from the treatment liquid nozzle is abnormal is different from the time change of the load when the treatment liquid discharge state from the treatment liquid nozzle is normal. Therefore, based on the detected time change of the load, it is determined whether or not the discharge state of the processing liquid from the processing liquid nozzle is normal. Thereby, the abnormality of the discharge state of the processing liquid can be detected.

  According to the present invention, it is possible to detect an abnormality in the discharge state of the processing liquid.

1 is a schematic plan view of a substrate processing apparatus according to a first embodiment of the present invention. It is a typical side view which shows the internal structure of the application | coating process part of FIG. 1, an application | coating development process part, and a washing-drying process part. It is a top view which shows the structure of a coating process unit. It is a figure which shows the structure of a discharge test | inspection unit. It is a block diagram which shows the structure of a local controller. It is a figure which shows the load change based on the load change data acquired in a discharge test process. It is a flowchart which shows a discharge inspection process. It is a flowchart which shows a discharge inspection process. It is a typical side view which shows the internal structure of the heat processing part and washing | cleaning drying process part of FIG. It is a typical side view which shows the internal structure of a conveyance part. It is a figure which shows the structure of the discharge test | inspection unit in a modification. It is a figure which shows the load change acquired in the discharge test process using the discharge test | inspection unit of FIG. It is a figure which shows the load change acquired in the discharge test process using the discharge test | inspection unit of FIG. It is a longitudinal cross-sectional view of the process liquid nozzle in 2nd Embodiment.

[1] First Embodiment (1) Configuration of Substrate Processing Apparatus Hereinafter, a substrate processing apparatus and a substrate processing method according to a first embodiment of the present invention will be described with reference to the drawings. In the following description, the substrate means a semiconductor substrate, a liquid crystal display substrate, a plasma display substrate, an optical disk substrate, a magnetic disk substrate, a magneto-optical disk substrate, a photomask substrate, or the like.

  FIG. 1 is a schematic plan view of a substrate processing apparatus according to a first embodiment of the present invention. In FIG. 1 and the following predetermined drawings, arrows indicating X, Y, and Z directions orthogonal to each other are attached in order to clarify the positional relationship. The X direction and the Y direction are orthogonal to each other in the horizontal plane, and the Z direction corresponds to the vertical direction. In each direction, the direction in which the arrow points is the + direction, and the opposite direction is the-direction.

  As shown in FIG. 1, the substrate processing apparatus 100 includes an indexer block 11, a first processing block 12, a second processing block 13, a cleaning / drying processing block 14A, and a loading / unloading block 14B. The cleaning / drying processing block 14A and the carry-in / carry-out block 14B constitute an interface block 14. The exposure device 15 is disposed adjacent to the carry-in / carry-out block 14B. In the exposure device 15, the substrate W is subjected to exposure processing by a liquid immersion method.

  As shown in FIG. 1, the indexer block 11 includes a plurality of carrier placement units 111 and a conveyance unit 112. On each carrier placement section 111, a carrier 113 that houses a plurality of substrates W in multiple stages is placed. The transport unit 112 is provided with a main controller 114 and a transport mechanism 115. The main controller 114 controls various components of the substrate processing apparatus 100. The transport mechanism 115 transports the substrate W while holding the substrate W.

  The first processing block 12 includes a coating processing unit 121, a transport unit 122, and a heat treatment unit 123. The coating processing unit 121 and the heat treatment unit 123 are opposed to each other with the conveyance unit 122 interposed therebetween. Between the transport unit 122 and the indexer block 11, substrate platforms PASS1 to PASS4 (see FIG. 10) on which the substrate W is mounted are provided. The transport unit 122 is provided with transport mechanisms 127 and 128 (see FIG. 10) for transporting the substrate W.

  The second processing block 13 includes a coating and developing processing unit 131, a conveying unit 132, and a heat treatment unit 133. The coating and developing processing unit 131 and the heat treatment unit 133 are opposed to each other with the transport unit 132 interposed therebetween. Between the transport unit 132 and the transport unit 122, substrate platforms PASS5 to PASS8 (see FIG. 10) on which the substrate W is placed are provided. The transport unit 132 is provided with transport mechanisms 137 and 138 (see FIG. 10) for transporting the substrate W.

  The cleaning / drying processing block 14 </ b> A includes cleaning / drying processing units 161, 162 and a transport unit 163. The cleaning / drying processing units 161 and 162 are opposed to each other with the conveyance unit 163 interposed therebetween. The transport unit 163 is provided with transport mechanisms 141 and 142.

  Between the transport unit 163 and the transport unit 132, placement and buffer units P-BF1 and P-BF2 (see FIG. 10) are provided. The placement / buffer units P-BF1 and P-BF2 are configured to accommodate a plurality of substrates W.

  Further, a substrate platform PASS9 and a later-described placement and cooling unit P-CP (see FIG. 10) are provided between the transport mechanisms 141 and 142 so as to be adjacent to the carry-in / carry-out block 14B. The placement / cooling unit P-CP has a function of cooling the substrate W (for example, a cooling plate). In the placement / cooling section P-CP, the substrate W is cooled to a temperature suitable for the exposure process.

  A transport mechanism 146 is provided in the carry-in / carry-out block 14B. The transport mechanism 146 carries the substrate W into and out of the exposure apparatus 15. The exposure apparatus 15 is provided with a substrate carry-in portion 15a for carrying in the substrate W and a substrate carry-out portion 15b for carrying out the substrate W.

(2) Coating Processing Unit and Development Processing Unit FIG. 2 is a schematic side view showing the internal configuration of the coating processing unit 121, the coating development processing unit 131, and the cleaning / drying processing unit 161 in FIG. As shown in FIG. 2, the coating processing section 121 is provided with coating processing chambers 21, 22, 23, and 24 in a hierarchical manner. In each of the coating processing chambers 21 to 24, a coating processing unit 129 is provided. The coating development processing unit 131 is provided with development processing chambers 31 and 33 and coating processing chambers 32 and 34 in a hierarchical manner. Each development processing chamber 31, 33 is provided with a development processing unit 139, and each coating processing chamber 32, 34 is provided with a coating processing unit 129.

  FIG. 3 is a plan view showing the configuration of the coating processing unit 129. As shown in FIGS. 2 and 3, each coating processing unit 129 includes a standby unit 20, a plurality of spin chucks 25, a plurality of cups 27, a plurality of processing liquid nozzles 28, a nozzle transport mechanism 29, and a plurality of edge rinse nozzles 30. Is provided. In the present embodiment, two spin chucks 25, cups 27, and edge rinse nozzles 30 are provided in each coating processing unit 129.

  Each spin chuck 25 is rotationally driven by a driving device such as an electric motor (not shown) while holding the substrate W. The cup 27 is provided so as to surround the periphery of the spin chuck 25. At the time of standby, each processing liquid nozzle 28 is inserted into the standby unit 20. Various processing liquids, which will be described later, are supplied to each processing liquid nozzle 28 through a processing liquid pipe from a processing liquid storage unit (not shown).

  Any one of the plurality of processing liquid nozzles 28 is moved above the substrate W by the nozzle transport mechanism 29. The processing liquid is applied onto the rotating substrate W by discharging the processing liquid from the processing liquid nozzle 28 while the spin chuck 25 rotates. Further, the edge rinse nozzle 30 is moved from the predetermined standby position to the vicinity of the peripheral edge of the substrate W. The rinse liquid is discharged from the edge rinse nozzle 30 toward the peripheral edge of the rotating substrate W while the spin chuck 25 rotates, so that the peripheral edge of the processing liquid applied to the substrate W is dissolved. Thereby, the processing liquid at the peripheral edge of the substrate W is removed.

  In the present embodiment, the treatment liquid for the antireflection film (antireflection liquid) is discharged from the treatment liquid nozzles 28 in the coating treatment chambers 22 and 24 of FIG. A processing liquid for the resist film (resist liquid) is discharged from the processing liquid nozzles 28 in the coating processing chambers 21 and 23. A processing liquid for the resist cover film (resist cover liquid) is discharged from the processing liquid nozzles 28 in the coating processing chambers 32 and 34.

  As shown in FIG. 2, the development processing unit 139 includes a plurality of spin chucks 35 and a plurality of cups 37, similarly to the coating processing unit 129. As shown in FIG. 1, the development processing unit 139 includes two slit nozzles 38 that discharge the developer and a moving mechanism 39 that moves the slit nozzles 38.

  In the development processing unit 139, the spin chuck 35 is rotated by a driving device (not shown). Thereby, the substrate W is rotated. In this state, the developer is supplied to each substrate W while the slit nozzle 38 moves. As a result, the resist cover film on the substrate W is removed, and development processing of the substrate W is performed.

  The cleaning / drying processing unit 161 includes a plurality (four in this example) of cleaning / drying processing units SD1. In the cleaning / drying processing unit SD1, the substrate W before the exposure processing is cleaned and dried.

(3) Inspection of Discharge of Treatment Liquid (a) Discharge Inspection Unit Each coating treatment unit 129 in FIG. 3 includes a discharge inspection unit 200 that inspects the discharge state and discharge amount of the treatment liquid discharged from the treatment liquid nozzle 28. Further prepare. In the example of FIG. 3, the discharge inspection unit 200 is disposed between the two cups 27. Further, the development processing unit 139 in FIG. 2 includes a discharge inspection unit 300 having the same configuration as the discharge inspection unit 200 of the coating processing unit 129.

  FIG. 4 is a diagram illustrating a configuration of the discharge inspection unit 200. 4A shows a plan view of the discharge inspection unit 200, and FIG. 4B shows a cross-sectional view of the discharge inspection unit 200 of FIG. 4A taken along the line AA. In FIG. 4A, illustration of the processing liquid nozzle 28 and the cleaning nozzle 240 of FIG. 4B is omitted.

  As shown in FIGS. 4A and 4B, the discharge inspection unit 200 includes a storage unit 210, a load detection unit 220, a storage unit 230, and a cleaning nozzle 240. The accommodating part 210 includes a bottom part 211 and a side part 212 and has a cup shape. A waste liquid port 213 is formed in the bottom surface portion 211 of the storage unit 210.

  In the present embodiment, the load detection unit 220 is configured by a single load detection element 221. The load detection element 221 is, for example, a load cell. The load detection element 221 is disposed at a substantially central portion of the bottom surface portion 211 of the housing portion 210. The storage unit 230 is a container that can store the processing liquid. The storage unit 230 is disposed on the load detection unit 220. The height of the reservoir 230 is relatively small. A cleaning nozzle 240 is disposed above the storage unit 230.

(B) Local Controller FIG. 5 is a block diagram showing the configuration of the local controller. The local controller 400 controls the operation of the discharge inspection unit 200 based on a command from the main controller 114 in FIG. The local controller 400 periodically performs a discharge inspection process before a substrate process described later is performed. In the discharge inspection process, it is inspected whether the discharge state and discharge amount of the processing liquid are normal.

  As shown in FIG. 5, the local controller 400 includes a storage unit 410 and a control unit 420. The storage unit 410 is configured by a random access memory (RAM) or a hard disk. The storage unit 410 stores a program for controlling the operation of the first processing block 12 (FIG. 1) including the discharge inspection unit 200 and various data.

  The control unit 420 includes a central processing unit (CPU). The control unit 420 includes an application processing drive unit 421, a load change acquisition unit 422, a load integration unit 423, a discharge amount acquisition unit 424, a determination unit 425, and a notification unit 426. Functions of the application processing drive unit 421, the load change acquisition unit 422, the load integration unit 423, the discharge amount acquisition unit 424, the determination unit 425, and the notification unit 426 are executed when the control unit 420 executes the program stored in the storage unit 410. Is realized.

  The coating process driving unit 421 controls the operation of the coating process unit 129 of FIG. In the discharge inspection process, the application processing drive unit 421 controls the nozzle transport mechanism 29 (FIG. 3) to store the processing liquid nozzle 28 (FIG. 3) to be inspected from the standby unit 20 (FIG. 3). 230 is moved upward (FIG. 4B). In this state, the coating processing driving unit 421 causes the processing liquid nozzle 28 to discharge the processing liquid into the storage unit 230 a predetermined number of times. As a result, the processing liquid is stored in the storage unit 230.

  The load detection unit 220 detects an impact load (dynamic load) applied to the bottom surface of the storage unit 230 by the processing liquid. The load change acquisition unit 422 acquires load change data indicating the time change of the impact load detected by the load detection unit 220. The load integrating unit 423 calculates the integrated amount of the impact load in a predetermined period based on the load change data acquired by the load change acquiring unit 422.

  The storage unit 410 stores in advance a table or a mathematical expression indicating the relationship between the integrated amount of impact load and the discharge amount of the processing liquid. The discharge amount acquisition unit 424 acquires the discharge amount of the processing liquid based on the integrated amount of the impact load calculated by the load integration unit 423 and the table or formula stored in the storage unit 410.

  In the storage unit 410, load change data used as a comparison target is stored in advance as reference change data. In the present embodiment, the reference change data is data indicating a temporal change in the impact load acquired when the discharge amount of the processing liquid is normal. In addition, the storage unit 410 stores in advance a set amount of processing liquid used for substrate processing.

  The determination unit 425 calculates the absolute value of the difference between the load change data acquired by the load change acquisition unit 422 and the reference change data stored in the storage unit 410. Hereinafter, the absolute value of the difference between the acquired load change data and the stored reference change data is abbreviated as the difference between the acquired load change data and the stored reference change data. The storage unit 410 stores in advance a load tolerance indicating a tolerance between the load change data and the reference change data. When the difference between the load change data calculated by the determination unit 425 and the reference change data is less than the load tolerance stored in the storage unit 410, the determination unit 425 determines that the treatment liquid discharge state is normal. To do.

  Further, the determination unit 425 calculates the absolute value of the difference between the treatment liquid discharge amount acquired by the discharge amount acquisition unit 424 and the treatment liquid set amount stored in the storage unit 410. Hereinafter, the absolute value of the difference between the acquired discharge amount of the processing liquid and the stored setting amount of the processing liquid is abbreviated as the difference between the acquired discharge amount of the processing liquid and the stored setting amount of the processing liquid. In the storage unit 410, a discharge tolerance indicating a tolerance between the discharge amount of the processing liquid and the set amount is stored in advance. When the difference between the calculated discharge amount of the processing liquid and the set amount is less than the discharge tolerance stored in the storage unit 410, the determination unit 425 determines that the discharge amount of the processing liquid is normal.

  The notification unit 426 notifies the user whether or not the processing liquid discharge state and the discharge amount are normal. The notification of the discharge state and the discharge amount may be performed by outputting characters to a display device (not shown). Alternatively, the notification of the discharge state and the discharge amount may be performed by outputting an alarm or sound. Alternatively, the notification of the discharge state and the discharge amount may be performed by turning on or off a light emitting element (not shown).

  After the discharge inspection process is completed, a volatile cleaning liquid is discharged from the cleaning nozzle 240 into the storage unit 230. Thereby, the processing liquid in the storage unit 230 overflows into the storage unit 210 and the storage unit 230 is washed. In this case, the processing liquid in the storage unit 210 is collected from a waste liquid port 213 on the bottom surface part 211 to a waste liquid system (not shown). Thereby, maintenance of the discharge inspection unit 200 can be facilitated. Since the cleaning liquid adhering to the storage unit 230 is then volatilized, the cleaning liquid in the storage unit 230 may not be removed.

  On the other hand, in the discharge inspection process, since the discharge state and discharge amount of the processing liquid are inspected based on the change in the impact load detected by the load detection unit 220, even if the processing liquid remains in the storage unit 230 There is no effect on the inspection of the discharge state and the discharge amount. Therefore, after the discharge inspection process is completed, the processing liquid stored in the storage unit 230 may be left without being actively discharged.

  In addition, since the height of the storage unit 230 is relatively small, when the processing liquid is discharged into the storage unit 230 in a state where a large amount of the processing liquid remains in the storage unit 230, the excessive processing liquid is stored in the storage unit 230. Overflows from the storage unit 210 to the storage unit 210. Even in this case, the inspection of the discharge state and discharge amount of the processing liquid is not affected.

(C) Determination of discharge state and discharge amount FIG. 6 is a diagram illustrating a load change based on load change data acquired in the discharge inspection process. 6A and 6B, the horizontal axis indicates time, and the vertical axis indicates impact load. 6A and 6B, the reference change based on the reference change data is indicated by a dotted line.

  The integrated amount of impact load calculated by the load integrating unit 423 corresponds to the area of the region surrounded by the horizontal axis of FIGS. 6A and 6B and the curve indicating the load change. Corresponds to the discharge amount. The area of the region surrounded by the horizontal axis of FIGS. 6A and 6B and the curve indicating the reference change corresponds to the set amount of the processing liquid.

  In the example of FIG. 6A, the load change substantially matches the reference change, and the difference between the load change data and the reference change data at each time point is less than the load tolerance Δi. Therefore, in this example, it is determined that the treatment liquid discharge state is normal. Further, the area of the region surrounded by the horizontal axis in FIG. 6A and the curve indicating the load change substantially matches the area of the region surrounded by the horizontal axis in FIG. 6A and the curve indicating the reference change. The difference between the discharge amount of the processing liquid and the set amount is less than the discharge tolerance. Therefore, in this example, it is determined that the discharge amount of the processing liquid is normal.

  On the other hand, in the example of FIG. 6B, the load change greatly deviates from the reference change, and the difference between the load change data and the reference change data at a plurality of time points is equal to or greater than the load tolerance Δi. Therefore, in this example, it is determined that the treatment liquid discharge state is abnormal. In addition, the area of the region surrounded by the horizontal axis of FIG. 6B and the curve indicating the load change is significantly different from the area of the region surrounded by the horizontal axis of FIG. 6B and the curve indicating the reference change. The difference between the treatment liquid discharge amount and the set amount is equal to or greater than the discharge tolerance. Therefore, in this example, it is determined that the discharge amount of the processing liquid is abnormal.

  The difference between the load change and the reference change may be calculated at the entire time point in the time domain, or the difference between the load change and the reference change may be calculated at a part of the time domain. For example, the difference between the load change data and the reference change data at a small number of points (about 5 points) may be calculated. In this case, it can be determined at high speed whether or not the discharge state of the processing liquid is normal.

  In the example of FIGS. 6A and 6B, time points t1 to t5 are set in advance. Here, at each time point t1 to t5, a time point allowable width Δt may be set. When the difference between the load change and the reference change is less than the load tolerance Δi within the range of the time tolerance Δt set at each time t1 to t5, it is determined that the treatment liquid is ejected normally. By setting the time point allowable width Δt small and the load tolerance Δi small, the discharge state of the processing liquid can be accurately inspected.

  In the present embodiment, the reference change data indicating the reference change in FIGS. 6A and 6B is data indicating the time change of the impact load acquired when the discharge amount of the processing liquid is normal. However, the present invention is not limited to this. The reference change data may be data indicating the temporal change of the impact load acquired in the previous ejection inspection process. In this case, it is possible to determine whether or not a change has occurred in the discharge state of the newly discharged treatment liquid and discharge amount compared to the previous discharge state and discharge amount of the treatment liquid.

  Specifically, the reference change data may be data indicating the time change of the impact load acquired in the first discharge inspection process, or may indicate the time change of the impact load acquired in the immediately preceding discharge inspection process. It may be data. Or the average etc. of the data which show the time change of the impact load acquired in the previous multiple discharge inspection process may be sufficient.

(D) Discharge Inspection Process FIGS. 7 and 8 are flowcharts showing the discharge inspection process. Hereinafter, the discharge inspection process performed by the control unit 420 of the local controller 400 will be described with reference to FIGS.

  First, the control unit 420 moves the processing liquid nozzle 28 to be inspected above the storage unit 230 (step S1). Next, the control unit 420 discharges the processing liquid from the processing liquid nozzle 28 into the storage unit 230 (step S2). Thereby, the load detection part 220 detects an impact load. Subsequently, the control unit 420 acquires load change data from the load detection unit 220 (step S3). Thereafter, the control unit 420 calculates an integrated amount of impact load in a predetermined period based on the acquired load change data (step S4).

  Next, the control unit 420 acquires the discharge amount of the processing liquid based on the calculated integrated amount of impact load and the table or mathematical formula stored in the storage unit 410 (step S5). Subsequently, the control unit 420 calculates a difference between the acquired discharge amount of the processing liquid and the set amount of the processing liquid stored in the storage unit 410 (step S6). Further, the difference between the acquired load change data and the reference change data stored in the storage unit 410 is calculated (step S7). Either of the processes of steps S6 and S7 may be performed first.

  Here, the control unit 420 determines whether or not the difference between the calculated treatment liquid discharge amount and the set amount is less than the discharge tolerance stored in the storage unit 410 (step S8). When the difference between the processing liquid discharge amount and the set amount is less than the discharge allowable difference, the control unit 420 determines the difference between the calculated load change data and the reference change data at all of a plurality of preset time points. Is less than the load tolerance stored in the storage unit 410 (step S9). If the difference between the load change data and the reference change data at all of the plurality of time points is less than the load tolerance, the control unit 420 ends the discharge inspection process.

  If the difference between the discharge amount of the processing liquid and the set amount is greater than the discharge tolerance in step S8, the control unit 420 notifies the user that the discharge amount of the processing liquid is abnormal (step S10). Then, the discharge inspection process ends. In addition, when the difference between the load change data and the reference change data at any one of the plurality of time points is equal to or greater than the load tolerance in step S9, the control unit 420 indicates that the treatment liquid discharge state is abnormal to the user. To that effect (step S10), and the ejection inspection process is terminated. Either of the processes of steps S8 and S9 may be performed first.

  In the above-described discharge inspection process, notification is performed when the discharge state or discharge amount of the processing liquid is abnormal, and notification is not performed when the discharge state and discharge amount of the processing liquid are normal. Is not limited to this. Notification is performed when the discharge state and discharge amount of the processing liquid are normal, and notification may not be performed when the discharge state or discharge amount of the processing liquid is abnormal. Alternatively, notification indicating normality may be performed when the discharge state and discharge amount of the processing liquid are normal, and notification indicating abnormality may be performed when the discharge state or discharge amount of the processing liquid is abnormal.

(4) Heat treatment part FIG. 9: is a typical side view which shows the internal structure of the heat treatment parts 123 and 133 and the washing-drying process part 162 of FIG. As shown in FIG. 9, the heat treatment part 123 has an upper heat treatment part 301 provided above and a lower heat treatment part 302 provided below. The upper heat treatment section 301 and the lower heat treatment section 302 are provided with a plurality of heat treatment units PHP, a plurality of adhesion reinforcement processing units PAHP, and a plurality of cooling units CP.

  The local controller 400 of FIG. 5 is provided at the top of the heat treatment unit 123. The local controller 400 controls the operation of the discharge inspection unit 200 of FIG. 4 as described above based on the command from the main controller 114 of FIG. Further, the local controller 400 controls operations of the coating processing unit 121, the transport unit 122, and the heat treatment unit 123 based on a command from the main controller 114.

  In the heat treatment unit PHP, the substrate W is heated and cooled. In the adhesion reinforcement processing unit PAHP, adhesion reinforcement processing for improving the adhesion between the substrate W and the antireflection film is performed. Specifically, in the adhesion reinforcement processing unit PAHP, an adhesion enhancing agent such as HMDS (hexamethyldisilazane) is applied to the substrate W, and the substrate W is subjected to heat treatment. In the cooling unit CP, the substrate W is cooled.

  The heat treatment part 133 includes an upper heat treatment part 303 provided above and a lower heat treatment part 304 provided below. The upper heat treatment unit 303 and the lower heat treatment unit 304 are provided with a cooling unit CP, a plurality of heat treatment units PHP, and an edge exposure unit EEW.

  A local controller 500 having the same configuration as the local controller 400 in FIG. 5 is provided at the top of the heat treatment unit 133. The local controller 500 controls the operations of the discharge inspection unit 300 in the development processing chambers 31 and 33 and the discharge inspection unit 200 in the coating processing chambers 32 and 34 based on a command from the main controller 114 in FIG. Further, the local controller 500 controls the operations of the coating and developing processing unit 131, the conveying unit 132, and the heat treatment unit 133 based on a command from the main controller 114.

  In the edge exposure unit EEW, exposure processing (edge exposure processing) of the peripheral edge of the substrate W is performed. By performing the edge exposure process on the substrate W, the resist film on the peripheral edge of the substrate W is removed during the subsequent development process. This prevents the resist film on the peripheral portion of the substrate W from peeling off and becoming particles when the peripheral portion of the substrate W comes into contact with another portion after the development processing.

  The cleaning / drying processing section 162 is provided with a plurality (five in this example) of cleaning / drying processing units SD2. In the cleaning / drying processing unit SD2, the substrate W after the exposure processing is cleaned and dried.

(5) Conveying Unit FIG. 10 is a schematic side view showing the internal configuration of the conveying units 122, 132, and 163. As illustrated in FIG. 10, the transfer unit 122 includes an upper transfer chamber 125 and a lower transfer chamber 126. The transfer unit 132 includes an upper transfer chamber 135 and a lower transfer chamber 136. The upper transfer chamber 125 is provided with a transfer mechanism 127, and the lower transfer chamber 126 is provided with a transfer mechanism 128. The upper transfer chamber 135 is provided with a transfer mechanism 137, and the lower transfer chamber 136 is provided with a transfer mechanism 138.

  The coating processing chambers 21 and 22 (FIG. 2) and the upper thermal processing section 301 (FIG. 9) face each other with the upper transport chamber 125 interposed therebetween, and the coating processing chambers 23 and 24 (FIG. 2) and the lower thermal processing section 302 (FIG. 9). Is opposed to the lower transfer chamber 126. The development processing chamber 31 and the coating processing chamber 32 (FIG. 2) and the upper thermal processing section 303 (FIG. 9) are opposed to each other with the upper transport chamber 135 interposed therebetween, and the developing processing chamber 33 and the coating processing chamber 34 (FIG. 2) are lower thermal processing. It faces the section 304 (FIG. 9) with the lower transfer chamber 136 in between.

  As shown in FIG. 10, substrate platforms PASS <b> 1 and PASS <b> 2 are provided between the transport unit 112 and the upper transport chamber 125, and the substrate platform is placed between the transport unit 112 and the lower transport chamber 126. PASS3 and PASS4 are provided. Substrate platforms PASS5 and PASS6 are provided between the upper transport chamber 125 and the upper transport chamber 135, and substrate platforms PASS7 and PASS8 are provided between the lower transport chamber 126 and the lower transport chamber 136. It is done.

  A placement / buffer unit P-BF1 is provided between the upper transfer chamber 135 and the transfer unit 163, and a placement / buffer unit P-BF2 is provided between the lower transfer chamber 136 and the transfer unit 163. . A substrate platform PASS9 and a plurality of placement / cooling units P-CP are provided so as to be adjacent to the carry-in / carry-out block 14B in the transport unit 163.

  The placement / buffer unit P-BF1 is configured so that the substrate W can be carried in and out by the transport mechanism 137 and the transport mechanisms 141 and 142 (FIG. 1). The placement / buffer unit P-BF2 is configured such that the substrate W can be carried in and out by the transport mechanism 138 and the transport mechanisms 141 and 142 (FIG. 1). Further, the substrate platform PASS9 and the placement / cooling unit P-CP are configured such that the substrate W can be carried in and out by the transport mechanisms 141 and 142 (FIG. 1) and the transport mechanism 146.

  The substrate W transported from the indexer block 11 to the first processing block 12 is placed on the substrate platform PASS1 and the substrate platform PASS3. The substrate W transported from the first processing block 12 to the indexer block 11 is placed on the substrate platform PASS2 and the substrate platform PASS4.

  The substrate W transported from the first processing block 12 to the second processing block 13 is placed on the substrate platform PASS5 and the substrate platform PASS7. The substrate W to be transported from the second processing block 13 to the first processing block 12 is placed on the substrate platform PASS6 and the substrate platform PASS8.

  A substrate W to be transported from the second processing block 13 to the cleaning / drying processing block 14A is placed on the placement / buffer units P-BF1 and P-BF2. The substrate W to be transported from the cleaning / drying processing block 14A to the carry-in / carry-out block 14B is placed on the placement / cooling unit P-CP. The substrate W to be transported from the carry-in / carry-out block 14B to the cleaning / drying processing block 14A is placed on the substrate platform PASS9.

  The transport mechanism 127 delivers the substrate W to the coating processing chambers 21 and 22 (FIG. 2), the substrate platforms PASS1, PASS2, PASS5, PASS6 (FIG. 10), and the upper thermal processing section 301 (FIG. 9). The transport mechanism 126 delivers the substrate W to the coating processing chambers 23 and 24 (FIG. 2), the substrate platforms PASS3, PASS4, PASS7, PASS8 (FIG. 10) and the lower thermal processing section 302 (FIG. 9).

  The transport mechanism 137 includes a development processing chamber 31 (FIG. 2), a coating processing chamber 32 (FIG. 2), a substrate platform PASS5, PASS6 (FIG. 10), a placement / buffer unit P-BF1 (FIG. 10), and an upper stage heat treatment. The substrate W is delivered to the unit 303 (FIG. 9). The transport mechanism 138 includes a development processing chamber 33 (FIG. 2), a coating processing chamber 34 (FIG. 2), a substrate platform PASS7, PASS8 (FIG. 10), a placement / buffer unit P-BF2 (FIG. 10), and a lower heat treatment. The substrate W is delivered to the unit 304 (FIG. 9).

(6) Substrate Processing The substrate processing will be described with reference to FIGS. 1, 2, 9, and 10. A carrier 113 in which an unprocessed substrate W is accommodated is placed on the carrier placement portion 111 (FIG. 1) of the indexer block 11. The transport mechanism 115 transports the unprocessed substrate W from the carrier 113 to the substrate platforms PASS1 and PASS3 (FIG. 10). In addition, the transport mechanism 115 transports the processed substrate W placed on the substrate platforms PASS <b> 2 and PASS <b> 4 (FIG. 10) to the carrier 113.

  In the first processing block 12, the transport mechanism 127 (FIG. 10) applies the unprocessed substrate W placed on the substrate platform PASS <b> 1 to the adhesion reinforcement processing unit PAHP (FIG. 9) and the cooling unit CP (FIG. 9). And it conveys to the coating process chamber 22 (FIG. 2) in order. Next, the transport mechanism 127 transfers the substrate W in the coating processing chamber 22 to the thermal processing unit PHP (FIG. 9), the cooling unit CP (FIG. 9), the coating processing chamber 21 (FIG. 2), the thermal processing unit PHP (FIG. 9), and The substrate is sequentially transferred to the substrate platform PASS5 (FIG. 10).

  In this case, after the adhesion reinforcement processing is performed on the substrate W in the adhesion reinforcement processing unit PAHP, the substrate W is cooled to a temperature suitable for forming the antireflection film in the cooling unit CP. Next, in the coating processing chamber 22, an antireflection film is formed on the substrate W by the coating processing unit 129 (FIG. 2). Subsequently, after the heat treatment of the substrate W is performed in the heat treatment unit PHP, the substrate W is cooled to a temperature suitable for formation of the resist film in the cooling unit CP. Next, in the coating processing chamber 21, a resist film is formed on the substrate W by the coating processing unit 129 (FIG. 2). Thereafter, the substrate W is heat-treated in the heat treatment unit PHP, and the substrate W is placed on the substrate platform PASS5.

  Further, the transport mechanism 127 transports the substrate W after the development processing placed on the substrate platform PASS6 (FIG. 10) to the substrate platform PASS2 (FIG. 10).

  The transport mechanism 128 (FIG. 10) applies the unprocessed substrate W placed on the substrate platform PASS3 to the adhesion reinforcement processing unit PAHP (FIG. 9), the cooling unit CP (FIG. 9), and the coating processing chamber 24 (FIG. 2). ) In order. Next, the transport mechanism 128 transfers the substrate W in the coating processing chamber 24 to the thermal processing unit PHP (FIG. 9), the cooling unit CP (FIG. 9), the coating processing chamber 23 (FIG. 2), the thermal processing unit PHP (FIG. 9), and The substrate is sequentially transferred to the substrate platform PASS7 (FIG. 10).

  Further, the transport mechanism 128 (FIG. 10) transports the substrate W after the development processing placed on the substrate platform PASS8 (FIG. 10) to the substrate platform PASS4 (FIG. 10). The processing contents of the substrate W in the coating processing chambers 23 and 24 (FIG. 2) and the lower thermal processing section 302 (FIG. 9) are the same as those in the coating processing chambers 21 and 22 (FIG. 2) and the upper thermal processing section 301 (FIG. 9). The processing contents of W are the same.

  In the second processing block 13, the transport mechanism 137 (FIG. 10) transfers the substrate W after the resist film formation placed on the substrate platform PASS5 to the edge exposure unit EEW (FIG. 9) and the placement / buffer unit P. -It conveys in order to BF1 (FIG. 10). In this case, the edge exposure processing is performed on the substrate W in the edge exposure unit EEW. The substrate W after the edge exposure processing is placed on the placement / buffer unit P-BF1.

  Further, the transport mechanism 137 (FIG. 10) takes out the substrate W after the exposure processing and after the heat treatment from the heat treatment unit PHP (FIG. 9) adjacent to the cleaning / drying processing block 14A. The transport mechanism 137 transfers the substrate W to the cooling unit CP (FIG. 9), one of the development processing chambers 31 and 32 (FIG. 2), the heat treatment unit PHP (FIG. 9), and the substrate platform PASS6 (FIG. 10). Transport in order.

  In this case, after the substrate W is cooled to a temperature suitable for the development processing in the cooling unit CP, the development processing of the substrate W is performed by the development processing unit 139 in one of the development processing chambers 31 and 32. Thereafter, the substrate W is heat-treated in the heat treatment unit PHP, and the substrate W is placed on the substrate platform PASS6.

  The transport mechanism 138 (FIG. 10) sequentially transfers the substrate W after the resist film formation placed on the substrate platform PASS7 to the edge exposure unit EEW (FIG. 9) and the placement / buffer unit P-BF2 (FIG. 10). Transport.

  Further, the transport mechanism 138 (FIG. 10) takes out the substrate W after the exposure process and after the heat treatment from the heat treatment unit PHP (FIG. 9) adjacent to the interface block 14. The transport mechanism 138 transfers the substrate W to the cooling unit CP (FIG. 9), one of the development processing chambers 33 and 34 (FIG. 2), the heat treatment unit PHP (FIG. 9), and the substrate platform PASS8 (FIG. 10). Transport in order. The processing contents of the substrate W in the development processing chambers 33 and 34 and the lower thermal processing section 304 are the same as the processing contents of the substrate W in the development processing chambers 31 and 32 and the upper thermal processing section 303, respectively.

  In the cleaning / drying processing block 14A, the transport mechanism 141 (FIG. 1) cleans the substrate W placed on the placement / buffer units P-BF1, P-BF2 (FIG. 10), and the cleaning / drying processing unit SD1 (FIG. 2) and It conveys in order to mounting and cooling part P-CP (FIG. 10). In this case, after the cleaning and drying processing of the substrate W is performed in the cleaning / drying processing unit SD1, the substrate W is cooled to a temperature suitable for the exposure processing by the exposure device 15 (FIG. 1) in the placement / cooling unit P-CP. Is done.

  The transport mechanism 142 (FIG. 1) performs cleaning / drying processing unit SD2 (FIG. 9) and the upper thermal processing unit 303 or the lower thermal processing unit 304 on the substrate W after the exposure processing placed on the substrate platform PASS9 (FIG. 10). It conveys in order to heat processing unit PHP (FIG. 9). In this case, after the substrate W is cleaned and dried in the cleaning / drying processing unit SD2, a post-exposure bake (PEB) process is performed in the heat treatment unit PHP.

  In the carry-in / carry-out block 14B, the transport mechanism 146 (FIG. 1) transfers the substrate W before exposure processing placed on the placement / cooling unit P-CP (FIG. 10) to the substrate carry-in unit 15a (FIG. 1) of the exposure apparatus 15. ). The transport mechanism 146 (FIG. 1) takes out the substrate W after the exposure processing from the substrate carry-out portion 15b (FIG. 1) of the exposure apparatus 15, and transports the substrate W to the substrate platform PASS9 (FIG. 10).

  In the present embodiment, the processing of the substrate W in the coating processing chambers 21 and 22, the development processing chambers 31 and 32 and the upper thermal processing units 301 and 303 provided in the upper stage, and the coating processing chambers 23 and 24 provided in the lower stage. The processing of the substrate W in the development processing chambers 33 and 34 and the lower thermal processing units 302 and 304 can be performed in parallel. Thereby, the throughput can be improved without increasing the footprint.

(7) Modification Although the load detection part 220 of the discharge test | inspection unit 200 of FIG. 4 is comprised by a single load detection element, this invention is not limited to this. The load detection unit 220 may be configured by a plurality of load detection elements.

  FIG. 11 is a diagram illustrating a configuration of a discharge inspection unit 200 according to a modification. 11A shows a plan view of the discharge inspection unit 200, and FIG. 11B shows a cross-sectional view of the discharge inspection unit 200 in FIG. In FIG. 11A, illustration of the processing liquid nozzle 28 and the cleaning nozzle 240 of FIG. 11B is omitted. The discharge inspection unit 200 of FIG. 11 has the same configuration as the discharge inspection unit 200 of FIG. 4 except for the following points.

  When the processing liquid is solidified at the tip of the processing liquid nozzle 28, or when the processing liquid nozzle 28 comes into contact with another member or a user, the discharge direction or distribution of the processing liquid may become abnormal. is there. In the discharge inspection unit 200 of FIG. 11, it is possible to determine whether the discharge direction or distribution of the treatment liquid is normal as the discharge state of the treatment liquid.

  As shown in FIGS. 11A and 11B, the load detection unit 220 includes three load detection elements 221, 222, and 223. The load detection elements 221 to 223 are disposed at a substantially central portion of the bottom surface portion 211 of the housing portion 210. The storage unit 230 is arranged so as to be supported substantially evenly on the load detection elements 221 to 223. In this configuration, the sum of the load change data corresponding to the impact load detected by the three load detecting elements 221, 222, and 223 is the load change indicating the change in the solid line in FIGS. 6 (a) and 6 (b). Equivalent to data.

  In this example, the storage unit 410 includes individual reference change data corresponding to each of the load detection elements 221 to 223 in addition to the reference change data indicating the reference change of the dotted line in FIGS. Stored in advance. In addition, when the impact loads detected by the load detection elements 221 to 223 are substantially equal to each other when the treatment liquid discharge state is normal, the storage unit 410 corresponds to one of the load detection elements 221 to 223. Individual reference change data to be stored may be stored in advance.

  The determination unit 425 in FIG. 5 calculates the difference between the load change data corresponding to each of the load detection elements 221 to 223 and the individual reference change data stored in the storage unit 410. The storage unit 410 stores in advance an individual load tolerance indicating a tolerance between the load change data corresponding to each of the load detection elements 221 to 223 and the individual reference change data. If the difference between the load change data corresponding to each of the load detection elements 221 to 223 and the individual reference change data is less than the individual load tolerance stored in the storage unit 410 at a plurality of time points, the determination unit 425 performs processing. It is determined that the direction or distribution of liquid discharge is normal.

  12 and 13 are diagrams showing load changes acquired in the discharge inspection process using the discharge inspection unit 200 of FIG. 12A to 12D and FIGS. 13A to 13D, the horizontal axis represents time, and the vertical axis represents impact load.

  FIG. 12A and FIG. 13A show a load change corresponding to the load detection element 221. FIG. 12B and FIG. 13B show a load change corresponding to the load detection element 222. FIG. 12C and FIG. 13C show a load change corresponding to the load detection element 223. FIG. 12D and FIG. 13D show the total load change corresponding to the load detection elements 221 to 223. Therefore, the total load change in FIGS. 12D and 13D is equivalent to the load change in the solid line in FIGS. 6A and 6B.

  In the example of FIG. 12, the difference between the total load change data and the reference change data in FIG. 12D is less than the load tolerance, and the discharge amount and the set amount of the processing liquid calculated from the total load change data Is less than the discharge tolerance. Also, the load changes in FIGS. 12A to 12C corresponding to the load detection elements 221 to 223 are substantially equal to each other, and the difference between each load change data and the individual reference change data at a plurality of time points is less than the individual load tolerance. It is. Therefore, in this example, it is determined that the discharge amount of the treatment liquid is normal and the discharge state of the treatment liquid including the treatment liquid discharge direction or distribution is normal.

  On the other hand, in the example of FIG. 13, the difference between the sum of the load change data and the reference change data in FIG. 13D is less than the load tolerance, and the discharge amount of the processing liquid calculated from the sum of the load change data It is assumed that the difference from the set amount is less than the discharge tolerance. However, the load change in FIG. 13A and the load change in FIGS. 13B and 13C are remarkably different, and the difference between each load change data and the individual reference change data at a plurality of time points exceeds the individual load tolerance. It is. Therefore, in this example, the discharge amount of the processing liquid is normal, but it is determined that the discharge direction or distribution of the processing liquid is abnormal.

(8) Effect In the substrate processing apparatus 100 according to the present embodiment, the load detection unit 220 detects an impact load due to the processing liquid discharged from the processing liquid nozzle 28. Here, the time change of the impact load when the treatment liquid discharge state from the treatment liquid nozzle 28 is abnormal is the time change of the impact load when the treatment liquid discharge state from the treatment liquid nozzle 28 is normal. Is different.

  Therefore, the time change of the impact load detected by the load detection unit 220 is acquired by the load change acquisition unit 422. Based on the time change of the impact load acquired by the load change acquisition unit 422, the determination unit 425 determines whether or not the processing liquid discharge state from the processing liquid nozzle 28 is normal.

  Further, the integrated amount of impact load in a predetermined period is calculated by the load integrating unit 423. Based on the integrated amount of impact load calculated by the load integrating unit 423, the determining unit 425 determines whether or not the processing liquid discharge amount from the processing liquid nozzle 28 is normal.

  According to this configuration, the determination unit 425 can detect an abnormality in the discharge state of the processing liquid. Further, the notification unit 426 notifies the user of the determination result of whether or not the discharge state and the discharge amount of the processing liquid by the determination unit 425 are normal. Thereby, the user can easily recognize the determination result as to whether or not the discharge state of the processing liquid from the processing liquid nozzle 28 is normal.

  Further, in the above discharge inspection process, the discharge amount of the processing liquid is inspected based on the change in the impact load detected by the load detection unit 220. Therefore, even if the processing liquid volatilizes during the discharge inspection process, the process is performed. The liquid discharge amount is accurately calculated. For this reason, even when the treatment liquid is highly volatile, the discharge amount of the treatment liquid can be accurately inspected.

[2] Second Embodiment In the first embodiment, the load detection unit 220 is provided in the discharge inspection unit 200, but the present invention is not limited to this. The load detection unit 220 may not be provided in the discharge inspection unit 200. Hereinafter, the difference between the substrate processing apparatus 100 according to the second embodiment and the substrate processing apparatus 100 according to the first embodiment will be described.

  FIG. 14 is a vertical cross-sectional view of the processing liquid nozzle in the second embodiment. The substrate processing apparatus 100 according to the present embodiment is not provided with the discharge inspection unit 200. As shown in FIG. 14, the processing liquid nozzle 28 includes a horizontal portion 281 extending substantially horizontally and a vertical portion 282 extending substantially vertically. In the present embodiment, the horizontal portion 281 and the vertical portion 282 are formed of a resin such as Teflon (registered trademark).

  A flow path 283 through which the processing liquid passes is formed inside the horizontal portion 281. The flow path 283 extends substantially horizontally inside the horizontal portion 281 and bends vertically near the end of the horizontal portion 281. The vertical portion 282 is provided so as to protrude downward from one end of the horizontal portion 281. A flow path 284 through which the processing liquid passes is formed inside the vertical portion 282. The flow path 283 of the horizontal portion 281 and the flow path 284 of the vertical portion 282 communicate with each other.

  In the present embodiment, the load detection element 221 of the load detection unit 220 is provided in the vicinity of the bent portion of the flow path 283 inside the horizontal portion 281 of the treatment liquid nozzle 28. A wall 281a having a minute thickness (for example, several μm) is formed between the load detection element 221 and the flow path 283. Thereby, the load detection element 221 and the flow path 283 are separated by a minute distance. Therefore, when the processing liquid passes through the flow path 283, the load detection element 221 detects an impact load due to the processing liquid without directly contacting the processing liquid.

  The load detection unit 220 gives the detected impact load to the local controller 400 of FIG. The operation of the local controller 400 in the present embodiment is the same as the operation of the local controller 400 in the first embodiment. In the present embodiment, since the load detection unit 220 is provided in the processing liquid nozzle 28, it is possible to execute the discharge inspection processing in parallel while executing the substrate processing.

[3] Other Embodiments (a) In the first embodiment, the discharge inspection unit 200 includes the storage section 210, the load detection section 220, and the cleaning nozzle 240, but the present invention is not limited to this. The discharge inspection unit 200 may not include some or all of the storage unit 210, the load detection unit 220, and the cleaning nozzle 240. When the discharge inspection unit 200 does not include the storage unit 230, the processing liquid nozzle 28 discharges the processing liquid onto the load detection unit 220.

  (B) In the modification of the first embodiment, individual reference change data corresponding to at least one load detection element 221 to 223 is stored in the storage unit 410, but the present invention is not limited to this. When it is determined whether or not the direction or distribution of the treatment liquid discharge is normal based on variations in the plurality of impact change data respectively corresponding to the plurality of load detection elements 221 to 223, the individual reference change data is It may not be stored in the storage unit 410.

  (C) In the first and second embodiments, it is preferable that both the discharge state and the discharge amount of the processing liquid are inspected in the discharge inspection process, but the present invention is not limited to this. The discharge state of the processing liquid may be inspected in the discharge inspection process, and the discharge amount of the processing liquid may not be inspected.

  (D) In the first and second embodiments, it is preferable that the discharge amount of the processing liquid is acquired based on the integrated amount of impact load, but the present invention is not limited to this. The discharge amount of the processing liquid may not be acquired. In this case, the integrated amount of load when the discharge amount of the processing liquid from the processing liquid nozzle 28 is normal is stored in the storage unit 410 as the reference integrated amount. The determination unit 425 determines whether or not the discharge amount of the processing liquid is normal based on the reference integrated amount stored in the storage unit 410.

  In this configuration, the storage unit 410 does not store a table or a mathematical expression indicating the relationship between the integrated amount of impact load and the discharge amount of the processing liquid. In addition, the discharge amount acquisition unit 424 is not provided in the control unit 420.

  (E) In the first and second embodiments, the load detection unit 220 detects the impact load (dynamic load) of the processing liquid as the load of the processing liquid, but the present invention is not limited to this. The load detection unit 220 may detect the total of the static load and the dynamic load of the processing liquid as the load of the processing liquid. In this case, the determination unit 425 determines whether or not the discharge state and discharge amount of the processing liquid are normal based on the temporal change of the total static load and dynamic load of the processing liquid.

[4] Correspondence between each constituent element of claim and each element of the embodiment Hereinafter, an example of correspondence between each constituent element of the claim and each element of the embodiment will be described. It is not limited to examples.

  In the above embodiment, the substrate W is an example of a substrate, the substrate processing apparatus 100 is an example of a substrate processing apparatus, the processing liquid nozzle 28 is an example of a processing liquid nozzle, and the load detection unit 220 is a load detection unit. It is an example. The load detection elements 221 to 223 are examples of load detection elements, the determination unit 425 is an example of a determination unit, the storage unit 410 is an example of first and second storage units, and the load integration unit 423 is load integration. It is an example of a part. The discharge amount acquisition unit 424 is an example of a discharge amount acquisition unit, the notification unit 426 is an example of a notification unit, the storage unit 230 is an example of a storage unit, and the cleaning nozzle 240 is an example of a cleaning nozzle.

  As each constituent element in the claims, various other elements having configurations or functions described in the claims can be used.

  The present invention can be effectively used for substrate processing using various processing solutions.

DESCRIPTION OF SYMBOLS 11 Indexer block 12 1st process block 13 2nd process block 14 Interface block 14A Cleaning / drying process block 14B Loading / unloading block 15 Exposure apparatus 15a Substrate carrying-in part 15b Substrate carrying-out part 20 Standby | standby part 21-24, 32, 34 Coating process Chamber 25, 35 Spin chuck 27, 37 Cup 28 Processing liquid nozzle 28a Grasping part 29 Nozzle transport mechanism 30 Edge rinse nozzle 31, 33 Development processing chamber 38 Slit nozzle 39 Moving mechanism 100 Substrate processing apparatus 111 Carrier mounting part 112, 122, 132, 163 Transport unit 113 Carrier 114 Main controller 115, 127, 128, 137, 138, 141, 142, 146 Transport mechanism 121 Coating processing unit 123, 133 Heat treatment unit 125, 135 Upper transport 126, 136 Lower transfer chamber 129 Application processing unit 131 Application development processing unit 139 Development processing unit 161, 162 Cleaning / drying processing unit 200, 300 Discharge inspection unit 210 Storage unit 211 Bottom surface 212 Side surface 213 Waste liquid port 220 Load detection unit 221 223 Load detection element 230 Storage section 240 Cleaning nozzle 281 Horizontal section 281a Wall section 282 Vertical section 283, 284 Flow path 301, 303 Upper heat treatment section 302, 304 Lower heat treatment section 400, 500 Local controller 410 Storage section 420 Control section 421 Coating process Drive unit 422 Load change acquisition unit 423 Load integration unit 424 Discharge amount acquisition unit 425 Determination unit 426 Notification unit CP Cooling unit EEW Edge exposure unit PAHP Adhesion strengthening processing unit PASS1 to PASS9 Substrate mounting unit -BF1, P-BF2 placement 置兼 buffer section P-CP placement 置兼 cooling unit PHP thermal processing unit SD1, SD2 cleaning and drying process unit W substrate

Claims (12)

A substrate processing apparatus for processing a substrate using a processing liquid,
A processing liquid nozzle for discharging the processing liquid;
A load detection unit for detecting a load caused by the processing liquid discharged from the processing liquid nozzle;
A substrate processing apparatus comprising: a determination unit that determines whether or not a discharge state of the processing liquid from the processing liquid nozzle is normal based on a time change of the load detected by the load detection unit. A first storage unit that stores, as a reference time change, a time change in the load due to the treatment liquid when the discharge state of the treatment liquid from the treatment liquid nozzle is normal;
The determination unit determines whether or not the processing liquid is discharged from the processing liquid nozzle based on a comparison result between the time change of the load detected by the load detection unit and the reference time change stored in the first storage unit. The substrate processing apparatus according to claim 1, wherein it is determined whether or not is normal. The substrate processing apparatus according to claim 2, wherein the first storage unit stores a time change of the load detected by the load detection unit as the reference time change. The load detection unit includes a plurality of load detection elements that respectively detect loads due to the processing liquid discharged from the processing liquid nozzle.
The said determination part determines whether the discharge state of the process liquid from the said process liquid nozzle is normal based on the time change of the load each detected by these load detection elements. 4. The substrate processing apparatus according to claim 3. A load integrating unit that calculates an integrated amount of the load in a predetermined period based on a time change of the load detected by the load detecting unit;
The determination unit according to any one of claims 1 to 4, wherein the determination unit determines whether or not a discharge amount of the processing liquid from the processing liquid nozzle is normal based on an integrated amount of the load calculated by the load integration unit. The substrate processing apparatus according to claim 1. A second storage unit that stores the integrated load amount when the discharge amount of the processing liquid from the processing liquid nozzle is normal as a reference integrated amount;
The determination unit discharges the processing liquid from the processing liquid nozzle based on a comparison result between the integrated amount of load calculated by the load integrating unit and the reference integrated amount stored in the second storage unit. The substrate processing apparatus according to claim 5, wherein it is determined whether or not is normal. The second storage unit further stores a relationship between an integrated amount of load and a discharge amount of the processing liquid from the processing liquid nozzle,
The substrate processing apparatus includes:
A discharge amount acquiring unit that acquires the discharge amount of the processing liquid from the processing liquid nozzle based on the integrated amount of the load calculated by the load integrating unit and the relationship stored in the second storage unit; The substrate processing apparatus according to claim 6. The substrate processing apparatus according to claim 1, further comprising a notification unit that notifies a user of a determination result by the determination unit. Further comprising a reservoir disposed on the load detector;
The treatment liquid nozzle is provided so that the treatment liquid can be discharged into the storage unit,
The substrate processing apparatus according to claim 1, wherein the load detection unit detects a load caused by a processing liquid discharged into the storage unit. The substrate processing apparatus according to claim 9, further comprising a cleaning nozzle provided so that a cleaning liquid for cleaning the storage section can be discharged into the storage section. The substrate processing apparatus according to claim 1, wherein the load detection unit is provided in the processing liquid nozzle so as to be able to detect a load due to the processing liquid passing through the processing liquid nozzle. A substrate processing method for processing a substrate using a processing liquid,
Discharging the processing liquid from the processing liquid nozzle;
Detecting a load caused by the processing liquid discharged from the processing liquid nozzle;
Determining whether or not the discharge state of the processing liquid from the processing liquid nozzle is normal based on the detected time change of the load.

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