KR100659842B1 - An apparatus for boat - Google Patents

An apparatus for boat Download PDF

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KR100659842B1
KR100659842B1 KR1020050132550A KR20050132550A KR100659842B1 KR 100659842 B1 KR100659842 B1 KR 100659842B1 KR 1020050132550 A KR1020050132550 A KR 1020050132550A KR 20050132550 A KR20050132550 A KR 20050132550A KR 100659842 B1 KR100659842 B1 KR 100659842B1
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South Korea
Prior art keywords
wafer
temperature
wafers
chemical
heater
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KR1020050132550A
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Korean (ko)
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송훈
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동부일렉트로닉스 주식회사
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H01L21/67057—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing with the semiconductor substrates being dipped in baths or vessels
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67248—Temperature monitoring

Abstract

A temperature maintenance apparatus for a chemical bath is provided to improve the surface uniformity of a wafer by controlling a heater according to the quantity of the wafer. A temperature maintenance apparatus for a chemical bath includes a counter, a heater, and a controller. The counter(150) measures the number of wafers(1) and outputs the corresponding signal. The heater(160) controls the temperature of a chemical bath(100). The controller(170) outputs a heater control signal in accordance with the number of wafers using the corresponding signal from the counter. Thereby, the temperature of the chemical bath is constantly set.

Description

약액조의 온도 유지 장치{An apparatus for boat}An apparatus for maintaining temperature of a chemical liquid tank

도 1은 종래의 기술에 의한 일괄처리형 다조식 세정장치의 배치도. BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a layout diagram of a batch type multi-bath washing apparatus according to a conventional technique. FIG.

도 2는 종래의 기술에 의한 약액조의 일예를 나타내는 도면.2 is a view showing an example of a chemical liquid bath according to a conventional technique;

도 3은 종래의 기술에 의한 약액조에 웨이퍼 투입시 온도 변화를 나타내는 그래프.3 is a graph showing a temperature change when a wafer is put into a chemical solution tank according to a conventional technique.

도 4는 본 발명에 의한 약액조의 온도 유지 장치의 구성을 나타내는 도면.4 is a view showing a configuration of an apparatus for temperature control of a chemical tank according to the present invention.

도 5는 본 발명을 사용하는 경우의 약액조에 웨이퍼 투입시 온도 변화를 나타내는 그래프. 5 is a graph showing a temperature change when a wafer is put into a chemical liquid bath when the present invention is used.

- 도면의 주요부분에 대한 부호의 설명 -Description of the Related Art [0002]

100 : 약액조 150 : 카운터100: chemical solution tank 150: counter

160 : 히터 170 : 제어부 160: heater 170:

본 발명은 웨이퍼 세정 공정에 사용되는 약액조에 관한 것으로서, 특히 약액조에 웨이퍼가 투입될 때 웨이퍼의 투입 수량에 맞추어 히터의 발열량을 제어하여 약액조의 온도 변화가 감소되도록 하는 약액조의 온도 유지 장치에 관한 것이다. BACKGROUND OF THE INVENTION 1. Field of the Invention [0001] The present invention relates to a chemical liquid bath used in a wafer cleaning process, and more particularly, to a chemical liquid bath temperature maintaining apparatus for controlling a heating amount of a heater in accordance with a feed amount of a wafer when a wafer is put into a chemical bath, .

반도체 소자의 고밀도화 추세에 따라 실리콘(Si) 웨이퍼가 200㎜에서 300㎜로 커지고 패턴폭도 0.5㎛, 0.35㎛에 0.25㎛, 0.18㎛으로 미세화됨에 따라 세정기술에 있어서도 해결해야할 문제들이 대두되고 있다. As the density of semiconductor devices becomes higher, silicon (Si) wafers become larger from 200 mm to 300 mm, and pattern widths become smaller to 0.5, 0.35, 0.25, and 0.18 탆.

종래에는 주로 일괄처리(batch)형 다조식(多槽式) 세정장치가 이용되고 있으며, 도 1에 종래의 일괄처리형 다조식 세정장치의 배치도가 개략적으로 도시되어 있다. Conventionally, a batch-type multi-bath type cleaning apparatus has been used. FIG. 1 schematically shows a layout of a conventional batch-type multi-bath cleaning apparatus.

도시되어 있는 바와 같이, 종래의 일괄처리형 다조식 세정장치는 웨이퍼를 로딩하는 웨이퍼 로딩조(LD), 웨이퍼를 SC-1용액으로 세정하는 SC-1약액조, 퀵 덤프 린스(quick dump linse)를 실시하는 QDR조, 웨이퍼를 불산(HF)으로 세척하는 HF약액조, 다시 퀵 덤프 린스를 실시하는 QDR조, 최종적으로 린스로 세정하는 최종린스조(F/R), 웨이퍼를 건조하는 건조조(DRY), 세정공정을 완료된 웨이퍼를 세정장치로부터 배출시키는 웨이퍼 언로딩조(UL)가 순차적으로 배치되어 있다. As shown in the drawing, the conventional batch type multi-bath cleaning apparatus includes a wafer loading tank (LD) for loading wafers, an SC-1 chemical solution tank for cleaning wafers with SC-1 solution, a quick dump linse, , A QDR tank for cleaning the wafer with hydrofluoric acid (HF), a QDR tank for performing a quick dump rinse again, a final rinse tank (F / R) for final rinse cleaning, a drying tank for drying the wafer (DRY), and a wafer unloading tank (UL) for discharging the wafer after the cleaning process from the cleaning device.

이와 같은 종래의 일괄처리형 다조식 세정장치의 조들은 특히, 약액(chemical)을 사용하는 약액조(chemical bath)와, 순수(DI water)를 사용하는 세척조(rinse bath)로 구분될 수 있다. The baths of such a conventional batch type multi-bath washing apparatus can be classified into a chemical bath using a chemical and a rinse bath using DI water.

종래의 일괄처리형 다조식 세정장치에서 SC-1 약액조, HF 약액조는 약액조로 속하며, QDR조, 최종 린스조는 세척조로 구분된다. In the conventional batch-type multi-bath washing apparatus, the SC-1 chemical solution tank and the HF chemical tank tank belong to the chemical solution tank, and the QDR tank and the final rinse tank are classified into the washing tank.

도 2에 종래의 약액조의 일예가 도시되어 있다. 2 shows an example of a conventional chemical liquid bath.

도 2에 도시된 바와 같이, 종래의 약액조(100)는 약액을 공급할 수 있도록 복수개의 약액 공급부(110)가 설치되고, 그 아래에 약액을 저장하는 약액 용기 (120)가 마련되고, 약액 용기(120) 바깥쪽 둘레에 약액 용기(120)를 넘치는 약액을 저장하는 약액 저장용기(130)가 마련되고, 약액 저장용기(130)에 저장된 약액을 약액 용기(120)로 순환시킬 수 있도록 배관(140)이 설치되어 있다. 배관(140) 상에는 통상적으로 펌프(141)와 필터(142)가 마련되어 약액의 순환 및 여과기능이 원활하게 이루어진다. As shown in FIG. 2, a conventional chemical solution tank 100 is provided with a plurality of chemical solution supply units 110 for supplying a chemical solution, a chemical solution container 120 for storing a chemical solution thereunder, A chemical solution storage container 130 for storing a chemical solution overflowing the chemical solution container 120 is provided on the outer circumference of the chemical solution storage container 130 so that the chemical solution stored in the chemical solution storage container 130 can be circulated to the chemical solution container 120 140 are installed. On the piping 140, a pump 141 and a filter 142 are usually provided to smoothly circulate and filter the chemical liquid.

이와 같이 구성된 약액조(100)의 약액 용기(120)에 실리콘 웨이퍼를 담궈 세정공정을 실시하게 된다. A silicon wafer is immersed in the chemical liquid container 120 of the chemical liquid tank 100 constructed as described above to perform a cleaning process.

약액조를 이용하여 세정 공정을 실시하는 경우, 웨이퍼의 식각율이 온도에 따라 변화되기 때문에 약액조의 온도가 변화되는 경우에는 웨이퍼의 공정 조건이 불균일하게 되는 문제점이 있었다.In the case of performing the cleaning process using the chemical solution tank, the etching rate of the wafer changes with the temperature, and therefore, when the temperature of the chemical tank changes, the process conditions of the wafer become uneven.

특히, 웨이퍼가 약액조에 투입되는 순간 약액조의 온도가 저하되고, 이때 온도의 복원이 지체되면 웨이퍼의 조건이 불균형하게 된다. Particularly, when the wafer is put into the chemical liquid bath, the temperature of the chemical liquid bath is lowered, and when the restoration of the temperature is delayed, the condition of the wafer becomes unbalanced.

도 3에 도시되어 있는 바와 같이, 웨이퍼의 투입 숫자가 적은 경우(a)에는 약액조의 온도 변화율이 적고 정상 온도로의 복원도 용이하지만, 웨이퍼의 투입 숫자가 많은 경우(b)에는 약액조의 온도 변화율이 많고 정상 온도로의 복원도 용이하지 않아 웨이퍼의 공정 조건이 불균일하게 되어, 웨이퍼의 수율이 저하되는 문제점이 있었다. As shown in FIG. 3, when the number of injected wafers is small (a), the temperature change rate of the chemical tank is small and the recovery to the normal temperature is easy. However, when the number of wafers to be loaded is large, And restoration to a normal temperature is not easy, so that the process conditions of the wafer become uneven and the yield of the wafer is lowered.

본 발명은 이와 같은 종래의 제반 문제점을 해결하기 위한 것으로서, 웨이퍼를 세정하는 약액조의 온도가 일정하게 유지되도록 하여 균일한 표면 상태를 갖는 웨이퍼를 얻을 수 있는 약액조의 온도 유지 장치를 제공하는 것을 목적으로 한다. The object of the present invention is to provide a temperature maintaining apparatus for a chemical liquid bath capable of obtaining a wafer having a uniform surface state by keeping the temperature of the chemical liquid bath for cleaning the wafer constant. do.

도 4는 본 발명에 의한 약액조의 온도 유지 장치의 구성을 나타내는 도면으로서, 웨이퍼의 세정 공정을 실시하는 약액조에 있어서, 웨이퍼(1)의 갯수를 측정하고 해당하는 신호를 출력하는 카운터(150), 약액조(100)의 온도를 제어하는 히터(160), 상기 카운터(150)에서 출력되는 신호를 이용하여 웨이퍼 갯수에 맞는 히터 제어 신호를 출력하는 제어부(170)로 구성되어 있음을 도시하고 있다. 4 is a view showing a configuration of a temperature maintaining apparatus for a chemical solution tank according to the present invention. In the chemical solution tank for cleaning a wafer, a counter 150 for measuring the number of wafers 1 and outputting corresponding signals, A heater 160 for controlling the temperature of the chemical solution tank 100 and a controller 170 for outputting a heater control signal corresponding to the number of wafers using the signal output from the counter 150. [

상기 제어부(170)는 웨이퍼 투입 갯수가 많아지면 히터의 오프셋 값이 높아지도록 제어한다. The control unit 170 controls the offset value of the heater to be higher when the number of the wafer is increased.

도면을 참조하여 본 발명의 실시예를 설명하면 다음과 같다. Hereinafter, embodiments of the present invention will be described with reference to the drawings.

웨이퍼의 제작 공정 수행중 약액조를 이용한 세정공정을 실시하는 경우, 본 발명을 사용하여 약액조의 온도가 일정하게 유지되도록 한다. In the case of performing the cleaning process using the chemical liquid bath during the production process of the wafer, the temperature of the chemical liquid bath is kept constant by using the present invention.

우선, 공정의 수행을 위해 카운터(150)는 세정 공정에 투입되는 웨이퍼의 갯수를 측정하고 측정된 갯수에 해당하는 신호를 출력한다. First, the counter 150 measures the number of wafers to be supplied to the cleaning process and outputs a signal corresponding to the measured number.

카운터(150)에서 출력되는 신호는 제어부(170)로 입력되고, 제어부(170)는 입력되는 카운터(150)의 신호를 이용하여 웨이퍼(1)의 갯수에 따른 히터의 오프셋(off set)값을 설정하도록 한다. The signal output from the counter 150 is input to the controller 170. The controller 170 calculates an offset value of the heater according to the number of the wafers 1 .

즉, 약액조에 투입되는 웨이퍼의 갯수가 많은 경우에는 약액조의 온도 하강율이 높고 웨이퍼의 갯수가 적은 경우에는 약액조의 온도 하강율이 낮으므로, 제어부(170)는 설정된 오프셋(off set)값에 따라 히터 제어 신호를 출력하여, 히터 (160)에서 발열되는 열을 제어하도록 한다. That is, when the number of wafers to be injected into the chemical liquid bath is large, the temperature lowering rate of the chemical liquid bath is high and the temperature lowering rate of the chemical liquid bath is low when the number of wafers is small. So as to control the heat generated by the heater 160.

즉, 도 5에 도시되어 있는 바와 같이, 웨이퍼의 숫자의 많고 적음에 따라 오프셋 값을 높게 설정하거나(A), 오프셋 값을 낮게 설정(B)하도록 하여, 웨이퍼(1)가 약액조에 투입되기 전에 히터의 발열량을 제어하도록 한다. That is, as shown in FIG. 5, the offset value is set to be high (A) and the offset value is set to be low (B) as the number of wafers is increased or decreased, so that before the wafer 1 is put into the chemical bath Thereby controlling the amount of heat generated by the heater.

웨이퍼(1)가 약액조(100)로 투입되는 초기(A2)에는 약액조(100)의 온도가 저하되지만, 웨이퍼의 수량에 따른 오프셋 값에 의해 히터를 미리 제어하는 경우(BB)에는 오프셋 값을 설정하지 않은 경우(AA)와 비교하였을 때 온도 하강 범위는 낮은 수준임을 알 수 있다. The temperature of the chemical liquid bath 100 is lowered at the initial stage A2 where the wafer 1 is introduced into the chemical liquid bath 100. When the heater is controlled in advance by the offset value corresponding to the number of wafers, (AA), the temperature drop range is low.

초기(A2) 시간이 경과된 후부터는 약액조(100)의 온도는 정상 상태로 복원됨을 알 수 있다. It can be seen that the temperature of the chemical bath 100 is restored to the normal state after the elapse of the initial (A2) time.

도 4에서 도면 부호 141과 142는 각각 펌프와 필터를 나타낸다. 4, reference numerals 141 and 142 denote pumps and filters, respectively.

이상에서는 본 발명을 특정의 바람직한 실시예에 대하여 도시하고 설명하였으나, 본 발명은 이러한 실시예에 한정되지 않으며, 당해 발명이 속하는 기술분야에서 통상의 지식을 가진 자가 특허청구범위에서 청구하는 본 발명의 기술적 사상을 벗어나지 않는 범위내에서 실시할 수 있는 다양한 형태의 실시예들을 모두 포함한다. While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it is to be understood that the invention is not limited to the disclosed exemplary embodiments, And all of the various forms of embodiments that can be practiced without departing from the technical spirit.

이상에서와 같이 본 발명에 의하면, 약액조에 웨이퍼를 투입하는 경우 웨이퍼의 수량에 맞추어 히터의 발열을 제어하여 웨이퍼 투입시에도 약액조의 온도가 일정하게 유지되도록 하여 균일한 표면 상태를 갖는 웨이퍼를 얻을 수 있는 효과를 갖는다. As described above, according to the present invention, when a wafer is put in a chemical solution tank, the heat generation of the heater is controlled according to the number of wafers, so that the temperature of the chemical solution tank is kept constant even when the wafer is supplied, .

Claims (2)

웨이퍼의 세정 공정을 실시하는 약액조에 있어서, 웨이퍼(1)의 갯수를 측정하고 해당하는 신호를 출력하는 카운터(150), 약액조(100)의 온도를 제어하는 히터(160), 상기 카운터(150)에서 출력되는 신호를 이용하여 웨이퍼 갯수에 맞는 히터 제어 신호를 출력하는 제어부(170)를 포함하여 구성되는 것을 특징으로 하는 약액조의 온도 유지 장치.A chemical solution tank for performing a cleaning process of a wafer includes a counter 150 for measuring the number of wafers 1 and outputting a corresponding signal, a heater 160 for controlling the temperature of the chemical solution tank 100, And a controller (170) for outputting a heater control signal corresponding to the number of wafers using a signal output from the controller (170). 제 1 항에 있어서, 상기 제어부(170)는 웨이퍼 투입 갯수가 많아지면 히터의 오프셋 값이 높아지도록 제어하는 것을 특징으로 하는 약액조의 온도 유지 장치. The apparatus according to claim 1, wherein the control unit (170) controls the offset value of the heater to be higher when the number of wafers is increased.
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Publication number Priority date Publication date Assignee Title
US10818526B2 (en) 2017-07-26 2020-10-27 Sk Siltron Co., Ltd Apparatus of controlling temperature in wafer cleaning equipment and method thereof

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR19980019920A (en) * 1996-09-04 1998-06-25 조현기 Semiconductor wafer cleaning liquid indirect circulation heater
JPH10289894A (en) * 1997-04-15 1998-10-27 Tokyo Electron Ltd Cleaning system and method
KR20050003896A (en) * 2003-07-04 2005-01-12 삼성전자주식회사 Cleaning solution circulation apparatus in semiconductor manufacturing equipment

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR19980019920A (en) * 1996-09-04 1998-06-25 조현기 Semiconductor wafer cleaning liquid indirect circulation heater
JPH10289894A (en) * 1997-04-15 1998-10-27 Tokyo Electron Ltd Cleaning system and method
KR20050003896A (en) * 2003-07-04 2005-01-12 삼성전자주식회사 Cleaning solution circulation apparatus in semiconductor manufacturing equipment

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10818526B2 (en) 2017-07-26 2020-10-27 Sk Siltron Co., Ltd Apparatus of controlling temperature in wafer cleaning equipment and method thereof

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