WO2004032147B1 - Elements de stockage resistifs comprenant des nanoparticules comme puits de porteurs de charge - Google Patents

Elements de stockage resistifs comprenant des nanoparticules comme puits de porteurs de charge

Info

Publication number
WO2004032147B1
WO2004032147B1 PCT/DE2003/002993 DE0302993W WO2004032147B1 WO 2004032147 B1 WO2004032147 B1 WO 2004032147B1 DE 0302993 W DE0302993 W DE 0302993W WO 2004032147 B1 WO2004032147 B1 WO 2004032147B1
Authority
WO
WIPO (PCT)
Prior art keywords
resistive
element according
memory element
nanoparticles
dielectric
Prior art date
Application number
PCT/DE2003/002993
Other languages
German (de)
English (en)
Other versions
WO2004032147A1 (fr
Inventor
Guenter Schmid
Hagen Klauk
Marcus Halik
Andreas Walter
Original Assignee
Infineon Technologies Ag
Guenter Schmid
Hagen Klauk
Marcus Halik
Andreas Walter
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Infineon Technologies Ag, Guenter Schmid, Hagen Klauk, Marcus Halik, Andreas Walter filed Critical Infineon Technologies Ag
Publication of WO2004032147A1 publication Critical patent/WO2004032147A1/fr
Publication of WO2004032147B1 publication Critical patent/WO2004032147B1/fr

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0009—RRAM elements whose operation depends upon chemical change
    • G11C13/0014—RRAM elements whose operation depends upon chemical change comprising cells based on organic memory material
    • G11C13/0016—RRAM elements whose operation depends upon chemical change comprising cells based on organic memory material comprising polymers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0009—RRAM elements whose operation depends upon chemical change
    • G11C13/0014—RRAM elements whose operation depends upon chemical change comprising cells based on organic memory material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/011—Manufacture or treatment of multistable switching devices
    • H10N70/021—Formation of switching materials, e.g. deposition of layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors
    • H10N70/25—Multistable switching devices, e.g. memristors based on bulk electronic defects, e.g. trapping of electrons
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/821—Device geometry
    • H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/20—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having two electrodes, e.g. diodes

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Memories (AREA)

Abstract

L'invention concerne un élément de stockage résistif qui contient comme moyen de stockage un diélectrique dans lequel sont disposées des nanoparticules isolées. Ce diélectrique est formé de préférence d'un polymère organique. L'élément de stockage selon l'invention présente un effet d'hystérésis résistif. En deçà d'une tension Vhold, l'élément de stockage passe dans un état faiblement conducteur, tandis qu'il est transféré dans un état conducteur au-dessus d'une tension Vkrit. Par application d'une tension située entre Vhold et Vkrit., l'état de conduction de l'élément de stockage peut être déterminé.
PCT/DE2003/002993 2002-09-30 2003-09-09 Elements de stockage resistifs comprenant des nanoparticules comme puits de porteurs de charge WO2004032147A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE10245554A DE10245554B4 (de) 2002-09-30 2002-09-30 Nanopartikel als Ladungsträgersenke in resistiven Speicherelementen
DE10245554.6 2002-09-30

Publications (2)

Publication Number Publication Date
WO2004032147A1 WO2004032147A1 (fr) 2004-04-15
WO2004032147B1 true WO2004032147B1 (fr) 2004-07-22

Family

ID=32009985

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/DE2003/002993 WO2004032147A1 (fr) 2002-09-30 2003-09-09 Elements de stockage resistifs comprenant des nanoparticules comme puits de porteurs de charge

Country Status (2)

Country Link
DE (1) DE10245554B4 (fr)
WO (1) WO2004032147A1 (fr)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7602069B2 (en) 2004-03-31 2009-10-13 Universität Duisburg-Essen Micro electronic component with electrically accessible metallic clusters
DE102004046392A1 (de) * 2004-09-24 2006-04-06 Infineon Technologies Ag Halbleiterspeicher
DE502005001746D1 (de) * 2005-07-26 2007-11-29 Univ Duisburg Essen Mikroelektronisches Bauelement
DE102005035445B4 (de) * 2005-07-28 2007-09-27 Qimonda Ag Nichtflüchtige, resistive Speicherzelle auf der Basis von Metalloxid-Nanopartikeln sowie Verfahren zu deren Herstellung und entsprechende Speicherzellenanordnung
FI122009B (fi) * 2007-06-08 2011-07-15 Teknologian Tutkimuskeskus Vtt Nanopartikkeleihin perustuvat rakenteet ja menetelmä niiden valmistamiseksi
US20130197122A1 (en) * 2010-03-02 2013-08-01 Total Petrochemicals Research Feluy Nanocomposites with improved homogeneity

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE214648C (fr) *
JPS5012598B1 (fr) * 1970-04-02 1975-05-13
DE2501842A1 (de) * 1974-12-12 1976-06-16 Du Pont Elektrisches element fuer aenderbare rom-speichermatrizen
JP2813428B2 (ja) * 1989-08-17 1998-10-22 三菱電機株式会社 電界効果トランジスタ及び該電界効果トランジスタを用いた液晶表示装置
EP0460241B1 (fr) * 1989-12-26 1996-03-13 Mitsubishi Rayon Co., Ltd. Appareil optique de production de lumiere polarisee
DE4143405C2 (de) * 1990-03-26 1995-05-04 Murata Manufacturing Co Permanenter ferroelektrischer Speicher mit wahlfreiem Zugriff
US5714766A (en) * 1995-09-29 1998-02-03 International Business Machines Corporation Nano-structure memory device
NO972803D0 (no) * 1997-06-17 1997-06-17 Opticom As Elektrisk adresserbar logisk innretning, fremgangsmåte til elektrisk adressering av samme og anvendelse av innretning og fremgangsmåte
EP1051762A1 (fr) * 1998-02-02 2000-11-15 Uniax Corporation Reseaux de microrupteurs a adressage x-y et matrices de capteurs les utilisant
US6130814A (en) * 1998-07-28 2000-10-10 International Business Machines Corporation Current-induced magnetic switching device and memory including the same
US6294401B1 (en) * 1998-08-19 2001-09-25 Massachusetts Institute Of Technology Nanoparticle-based electrical, chemical, and mechanical structures and methods of making same
WO2000044507A1 (fr) * 1999-01-28 2000-08-03 The Board Of Regents For Oklahoma State University Films minces de nanoparticules a noyau et a couche
US6072716A (en) * 1999-04-14 2000-06-06 Massachusetts Institute Of Technology Memory structures and methods of making same
US6402903B1 (en) * 2000-02-04 2002-06-11 Steag Hamatech Ag Magnetic array for sputtering system
DE10059357A1 (de) * 2000-11-29 2002-06-13 Forschungszentrum Juelich Gmbh Verfahren zur Erzeugung eines Tunnelkontaktes sowie Vorrichtung umfassend Mittel zur Erzeugung eines Tunnelkontaktes
US6410934B1 (en) * 2001-02-09 2002-06-25 The Board Of Trustees Of The University Of Illinois Silicon nanoparticle electronic switches
DE10219121A1 (de) * 2002-04-29 2003-11-27 Infineon Technologies Ag Siliziumpartikel als Additive zur Verbesserung der Ladungsträgermobilität in organischen Halbleitern
DE10219120A1 (de) * 2002-04-29 2003-11-20 Infineon Technologies Ag Oberflächenfunktionalisierte anorganische Halbleiterpartikel als elektrische Halbleiter für mikroelektronische Anwendungen

Also Published As

Publication number Publication date
WO2004032147A1 (fr) 2004-04-15
DE10245554A1 (de) 2004-04-15
DE10245554B4 (de) 2008-04-10

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