WO2004032147B1 - Nanoparticles used as a charge carrier sink in resistive storage elements - Google Patents

Nanoparticles used as a charge carrier sink in resistive storage elements

Info

Publication number
WO2004032147B1
WO2004032147B1 PCT/DE2003/002993 DE0302993W WO2004032147B1 WO 2004032147 B1 WO2004032147 B1 WO 2004032147B1 DE 0302993 W DE0302993 W DE 0302993W WO 2004032147 B1 WO2004032147 B1 WO 2004032147B1
Authority
WO
WIPO (PCT)
Prior art keywords
resistive
element according
memory element
nanoparticles
dielectric
Prior art date
Application number
PCT/DE2003/002993
Other languages
German (de)
French (fr)
Other versions
WO2004032147A1 (en
Inventor
Guenter Schmid
Hagen Klauk
Marcus Halik
Andreas Walter
Original Assignee
Infineon Technologies Ag
Guenter Schmid
Hagen Klauk
Marcus Halik
Andreas Walter
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Infineon Technologies Ag, Guenter Schmid, Hagen Klauk, Marcus Halik, Andreas Walter filed Critical Infineon Technologies Ag
Publication of WO2004032147A1 publication Critical patent/WO2004032147A1/en
Publication of WO2004032147B1 publication Critical patent/WO2004032147B1/en

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0009—RRAM elements whose operation depends upon chemical change
    • G11C13/0014—RRAM elements whose operation depends upon chemical change comprising cells based on organic memory material
    • G11C13/0016—RRAM elements whose operation depends upon chemical change comprising cells based on organic memory material comprising polymers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0009—RRAM elements whose operation depends upon chemical change
    • G11C13/0014—RRAM elements whose operation depends upon chemical change comprising cells based on organic memory material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/011—Manufacture or treatment of multistable switching devices
    • H10N70/021—Formation of switching materials, e.g. deposition of layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors
    • H10N70/25—Multistable switching devices, e.g. memristors based on bulk electronic defects, e.g. trapping of electrons
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/821—Device geometry
    • H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/20—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having two electrodes, e.g. diodes

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Memories (AREA)

Abstract

The invention relates to a resistive storage element containing a dielectric as the storage medium, in which isolated nanoparticles are arranged. The dielectric is preferably configured from an organic polymer. The storage element exhibits a resistive hysteresis effect. Below a voltage Vhold, the storage element is switched to a slightly conductive state, whereas above a voltage Vkrit, the storage element changes over into a conductive state. The conductive state of the storage element can be read out by applying a voltage that lies between Vhold and Vkrit.

Claims

24GEÄNDERTE ANSPRÜCHE[beim Internationalen Büro am 21 April 2004 (21.04.04) eingegangen; ursprünglicher Anspruch 1 bis 11 durch neue Ansprüche 1 bis 10 ersetzt]Geänderte Patentansprüche nach Art. 19 AMENDED CLAIMS [received at the International Bureau on 21 April 2004 (21.04.04); original claim 1 to 11 replaced by new claims 1 to 10] Amended claims according to Art. 19
1. Resistives Speiσherelement mit einer Speicherzelle, welche zumindest einen ansteuerbaren ersten Kontakt, einen zweiten Kontakt und ein zwischen erstem und zweitem Kontakt angeordnetes, Nanopartikel enthaltendes Speichermedium umfasst, d a d u r c h g e k e n n z e i c h n e t , dass das Speichermedium aus einem Dielektrikum gebildet ist, welches isoliert zueinander angeordnete oberflächenmodifizierte Nanopartikel und/oder Nanopartikelcluster enthält.1. Resistive Speiσherelement with a memory cell, which comprises at least one controllable first contact, a second contact and arranged between the first and second contact, nanoparticles containing storage medium, characterized in that the storage medium is formed of a dielectric, which isolated to each other arranged surface-modified nanoparticles and / or contains nanoparticle clusters.
2. Resistives Speicherelement nach Anspruch 1, d a d u r c h g e k e n n z e i c h n e t , dass das Dielektrikum, aus einem anorganischen Isolator gebildet ist .2. Resistive memory element according to claim 1, characterized in that the dielectric is formed of an inorganic insulator.
3. Resistives Speicherelement nach Anspruch 1, d a d u r c h g e k e n n z e i c h n e t , dass das Dielektrikum aus einem organischen Polymer gebildet ist.3. A resistive memory element according to claim 1, characterized in that the dielectric is formed from an organic polymer.
4. Resistives Speiσherelement nach einem der vorhergehenden Ansprüche, d a d u r c h g e k e n n z e i c h n e t , dass die Nanopartikel aus einem Metall aufgebaut sind.4. Resistive storage element according to one of the preceding claims, characterized in that the nanoparticles are composed of a metal.
5. Resistives Speicherelement nach einem der Ansprüche 1 bis 3, d a d u r c h g e k e n n z e i c h n e t , dass die Nanopartikel aus einem anorganischen Halbleitermaterial aufgebaut sind.5. The resistive memory element according to claim 1, wherein the nanoparticles are composed of an inorganic semiconductor material.
6. Resistives Speicherelement nach Anspruch 5, d a d u r c h g e k e n n z e i c h n e t , dass die oberflächenmodifizierten Nanopartikel auf ihrer Oberfläche organische Reste tragen. 6. Resistive memory element according to claim 5, characterized in that the surface-modified nanoparticles carry on their surface organic radicals.
7. Resistives Speiσherelement nach einem der vorhergehenden Ansprüche, d a d u r c h g e k e n n z e i c h n e t , dass erster und zweiter Kontakt aus einem unterschiedlichen Material aufgebaut sind.7. The resistive storage element according to claim 1, wherein the first and second contacts are made of a different material.
8. Resistives Speicherelement nach einem der vorhergehenden Ansprüche, d a d u r c h g e k e n n z e i c h n e t , dass erster und zweiter Kontakt aus einem Metall aufgebaut sind.8. A resistive memory element according to one of the preceding claims, characterized in that the first and second contacts are made of a metal.
9. Resistives Speicherelement nach einem der vorhergehenden Ansprüche, d a d u r c h g e k e n n z e i c h n e t , dass ein konstanter Widerstand vorgesehen ist, welcher in Serie zum resistiven Speiσherelement geschaltet ist.9. Resistive memory element according to one of the preceding claims, characterized in that a constant resistance is provided, which is connected in series with the resistive Speiσherelement.
10. Speicherfeld, umfassend zumindest zwei zwischen zwei In- forraationszuständen schaltbare Speicherelemente nach einem der Ansprüche 1 bis 9, wobei eine Steuereinrichtung vorgesehen' ist, mit welcher der Informationszustand jedes Speiσherelements gesteuert werden kann. 10. Memory array, comprising at least two switchable between two Inforraationszuständen memory elements according to one of claims 1 to 9, wherein a control means is provided ' , with which the information state of each Speiσherelements can be controlled.
PCT/DE2003/002993 2002-09-30 2003-09-09 Nanoparticles used as a charge carrier sink in resistive storage elements WO2004032147A1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE10245554A DE10245554B4 (en) 2002-09-30 2002-09-30 Nanoparticles as charge carrier sinks in resistive storage elements
DE10245554.6 2002-09-30

Publications (2)

Publication Number Publication Date
WO2004032147A1 WO2004032147A1 (en) 2004-04-15
WO2004032147B1 true WO2004032147B1 (en) 2004-07-22

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/DE2003/002993 WO2004032147A1 (en) 2002-09-30 2003-09-09 Nanoparticles used as a charge carrier sink in resistive storage elements

Country Status (2)

Country Link
DE (1) DE10245554B4 (en)
WO (1) WO2004032147A1 (en)

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US7602069B2 (en) 2004-03-31 2009-10-13 Universität Duisburg-Essen Micro electronic component with electrically accessible metallic clusters
DE102004046392A1 (en) * 2004-09-24 2006-04-06 Infineon Technologies Ag Semiconductor memory
DE502005001746D1 (en) * 2005-07-26 2007-11-29 Univ Duisburg Essen Microelectronic component
DE102005035445B4 (en) * 2005-07-28 2007-09-27 Qimonda Ag Non-volatile, resistive memory cell based on metal oxide nanoparticles, as well as processes for their preparation and corresponding memory cell arrangement
FI122009B (en) * 2007-06-08 2011-07-15 Teknologian Tutkimuskeskus Vtt Structures based on nanoparticles and process for their preparation
US20130197122A1 (en) * 2010-03-02 2013-08-01 Total Petrochemicals Research Feluy Nanocomposites with improved homogeneity

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DE2501842A1 (en) * 1974-12-12 1976-06-16 Du Pont ELECTRICAL ELEMENT FOR CHANGEABLE ROM MEMORY MATRICES
JP2813428B2 (en) * 1989-08-17 1998-10-22 三菱電機株式会社 Field effect transistor and liquid crystal display device using the field effect transistor
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EP1051762A1 (en) * 1998-02-02 2000-11-15 Uniax Corporation X-y addressable electric microswitch arrays and sensor matrices employing them
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WO2000044507A1 (en) * 1999-01-28 2000-08-03 The Board Of Regents For Oklahoma State University Thin films of core-shell nanoparticles
US6072716A (en) * 1999-04-14 2000-06-06 Massachusetts Institute Of Technology Memory structures and methods of making same
US6402903B1 (en) * 2000-02-04 2002-06-11 Steag Hamatech Ag Magnetic array for sputtering system
DE10059357A1 (en) * 2000-11-29 2002-06-13 Forschungszentrum Juelich Gmbh Method for generating a tunnel contact and device comprising means for generating a tunnel contact
US6410934B1 (en) * 2001-02-09 2002-06-25 The Board Of Trustees Of The University Of Illinois Silicon nanoparticle electronic switches
DE10219121A1 (en) * 2002-04-29 2003-11-27 Infineon Technologies Ag Silicon particles as additives to improve charge carrier mobility in organic semiconductors
DE10219120A1 (en) * 2002-04-29 2003-11-20 Infineon Technologies Ag Semiconductor device, e.g. transistor or diode, has semiconductor zone(s) of semiconductor particles surface-modified with monomolecular ligand layer and contacts for injecting and extracting charge carriers into and from the zone

Also Published As

Publication number Publication date
WO2004032147A1 (en) 2004-04-15
DE10245554A1 (en) 2004-04-15
DE10245554B4 (en) 2008-04-10

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