WO2004030423A1 - X線発生装置及び露光装置 - Google Patents
X線発生装置及び露光装置 Download PDFInfo
- Publication number
- WO2004030423A1 WO2004030423A1 PCT/JP2003/009398 JP0309398W WO2004030423A1 WO 2004030423 A1 WO2004030423 A1 WO 2004030423A1 JP 0309398 W JP0309398 W JP 0309398W WO 2004030423 A1 WO2004030423 A1 WO 2004030423A1
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- WO
- WIPO (PCT)
- Prior art keywords
- mirror
- ray
- ray generator
- plasma
- nozzle
- Prior art date
Links
- 230000005540 biological transmission Effects 0.000 claims description 26
- 230000003287 optical effect Effects 0.000 claims description 26
- 239000013077 target material Substances 0.000 claims description 13
- 238000005286 illumination Methods 0.000 claims description 9
- 238000000605 extraction Methods 0.000 claims description 8
- 239000000758 substrate Substances 0.000 claims description 3
- 239000007788 liquid Substances 0.000 abstract description 30
- 239000007789 gas Substances 0.000 description 26
- 239000010408 film Substances 0.000 description 7
- 239000002245 particle Substances 0.000 description 5
- 238000005452 bending Methods 0.000 description 4
- 229910052790 beryllium Inorganic materials 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- ATBAMAFKBVZNFJ-UHFFFAOYSA-N beryllium atom Chemical compound [Be] ATBAMAFKBVZNFJ-UHFFFAOYSA-N 0.000 description 3
- 238000011144 upstream manufacturing Methods 0.000 description 3
- 238000001816 cooling Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 239000011343 solid material Substances 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 229910052724 xenon Inorganic materials 0.000 description 2
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 2
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 230000002238 attenuated effect Effects 0.000 description 1
- INAHAJYZKVIDIZ-UHFFFAOYSA-N boron carbide Chemical compound B12B3B4C32B41 INAHAJYZKVIDIZ-UHFFFAOYSA-N 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 229910052743 krypton Inorganic materials 0.000 description 1
- DNNSSWSSYDEUBZ-UHFFFAOYSA-N krypton atom Chemical compound [Kr] DNNSSWSSYDEUBZ-UHFFFAOYSA-N 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 229910052703 rhodium Inorganic materials 0.000 description 1
- 239000010948 rhodium Substances 0.000 description 1
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 238000004804 winding Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05G—X-RAY TECHNIQUE
- H05G2/00—Apparatus or processes specially adapted for producing X-rays, not involving X-ray tubes, e.g. involving generation of a plasma
- H05G2/001—Production of X-ray radiation generated from plasma
- H05G2/003—Production of X-ray radiation generated from plasma the plasma being generated from a material in a liquid or gas state
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
- G03F7/7015—Details of optical elements
- G03F7/70175—Lamphouse reflector arrangements or collector mirrors, i.e. collecting light from solid angle upstream of the light source
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70975—Assembly, maintenance, transport or storage of apparatus
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05G—X-RAY TECHNIQUE
- H05G2/00—Apparatus or processes specially adapted for producing X-rays, not involving X-ray tubes, e.g. involving generation of a plasma
- H05G2/001—Production of X-ray radiation generated from plasma
- H05G2/003—Production of X-ray radiation generated from plasma the plasma being generated from a material in a liquid or gas state
- H05G2/006—Production of X-ray radiation generated from plasma the plasma being generated from a material in a liquid or gas state details of the ejection system, e.g. constructional details of the nozzle
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05G—X-RAY TECHNIQUE
- H05G2/00—Apparatus or processes specially adapted for producing X-rays, not involving X-ray tubes, e.g. involving generation of a plasma
- H05G2/001—Production of X-ray radiation generated from plasma
- H05G2/008—Production of X-ray radiation generated from plasma involving an energy-carrying beam in the process of plasma generation
Definitions
- the present invention relates to an X-ray generator, an X-ray analyzer, and an X-ray generator provided in an X-ray apparatus such as an X-ray exposure apparatus, and an exposure apparatus including the same.
- the present invention relates to an X-ray generator and an exposure apparatus capable of easily exchanging each element provided in a vacuum chamber.
- FIG. 4 is a sectional view showing an example of a conventional liquid jet X-ray generator.
- the liquid jet X-ray generator of FIG. 4 includes a light source chamber 100.
- the light source chamber 100 is provided with a vacuum pump 102.
- the inside of the light source champer 100 is evacuated by a vacuum pump 102.
- a nozzle 101 is disposed in the light source chamber 100.
- the nozzle 101 is connected to a pipe 103 connected to a liquid gas cylinder (not shown).
- a support member 104 is provided between the pipe 103 and the inner surface of the light source chamber 100 to determine the position of the nozzle 101 and prevent the pipe 103 from shifting.
- the liquid gas cylinder is filled with a mixture of a target gas such as xenon (Xe) and a liquid such as water.
- a target gas such as xenon (Xe)
- a liquid such as water.
- the liquid gas in the liquid gas cylinder is sent to the nozzle 101 via the pipe 103, and is ejected from the tip of the nozzle 101 into the light source chamber 100.
- the ejected liquid gas becomes a target material when generating plasma.
- a mirror (first mirror) 105 is mounted inside the light source chamber 100 Attached via 106.
- the mirror 105 is an elliptical mirror having a mortar-shaped reflecting surface 105a in this example.
- the reflective surface 105a of the mirror 105 is coated with a multilayer film made of Mo / Si, for example.
- X-rays radiated from the plasma X-rays having a wavelength of about 13.4 nm are reflected by the reflecting surface 105a of the mirror 105, and are guided to the subsequent optical system as an X-ray beam.
- a flange member 110 is attached to the outer wall of the light source chamber 100 (upper right side in the figure).
- a light collecting mechanism 108 including a light collecting lens 107 is attached to the outer surface of the flange member 110.
- a laser light source 109 is arranged on the upstream side (right side in the figure) of the light collecting mechanism 108.
- the condenser lens 107 condenses the laser light L emitted from the laser light source 109 to the tip of the nozzle 101. By irradiating the condensed laser beam L to the liquid gas, a plasma P is generated, and X-rays are radiated from the plasma P.
- the mounting of the condenser lens 107 and the condenser mechanism 108 on the outer surface of the flange member 110 is mainly because of its ease of manufacture.
- the flange member 110 also serves as a member for closing an opening for taking out an element such as the mirror 105 out of the chamber 100, and can be attached to and detached from the outer surface of the light source chamber 100.
- an opening 100a for allowing the X-ray beam to pass is formed.
- an X-ray transmission filter 111 is disposed at a position covering the opening 100a.
- the X-ray transmission filter 111 is a thin film made of beryllium (Be) or the like, and cuts visible and ultraviolet light from the plasma.
- an aperture plate 113 is disposed immediately below the X-ray transmission filter 111.
- the aperture plate 113 is a disk having a pinhole 113a at the center.
- the X-ray beam reflected by the mirror 105 passes through the pinhole 113a of the aperture plate 113 and reaches the optical system at the subsequent stage. At this time, the area around the pinhole 113a of the aperture plate 113 blocks scattered X-rays (leakage light).
- liquid gas target And the like become atoms or ionic particles when plasma is generated.
- the liquid gas cannot be normally ejected.
- the reflectance of the mirror 105 decreases.
- the scattered particles also adhere to and deposit on the X-ray transmission filter 111. For this reason, it is necessary to replace the nozzle 101, mirror 105, and X-ray transmission filter 111 in the light source chamber 100 of the X-ray generator with new ones at regular intervals. is there.
- the frequency of replacement is high in the order of nozzle 101, mirror 105, and X-ray transmission filter 111.
- the mirror 105 must be removed before replacing the nozzle 101. In this way, every time the nozzle 101, which is replaced the most frequently, is replaced, the mirror 105, the condenser lens 107, and the condenser mechanism 108, which are replaced less frequently, must be removed. Nara.
- the nozzle 101, mirror 105, condenser lens 107, and condenser mechanism 108 must all be removed.
- an X-ray generator is an X-ray generator that converts a target material into plasma in a vacuum chamber and radiates X-rays from the plasma. It has an element such as a mirror and an X-ray transmission filter on which rays are incident first, and among the elements having a high exchange frequency, an extraction means for extracting the element out of the vacuum chamber is provided by the vacuum. It is characterized by being provided in one chamber.
- the elements are arranged in the vacuum chamber so that the elements can be taken out in descending order of replacement frequency without taking out the least frequently replaced elements. be able to.
- the frequently exchanged element can be taken out without taking out the infrequently exchanged element from the vacuum chamber, so that the element exchange work becomes easier.
- elements can be taken out in the order of replacement frequency without impairing the degree of design freedom and ease of production as much as possible. Can also be arranged as You.
- the extraction means may include an extraction member to which a base end side of the target material supply nozzle is attached.
- the replacement frequency is high in the order of a supply nozzle, a mirror, and an X-ray transmission filter, but according to this embodiment, merely removing the take-out member from the vacuum chamber causes other problems.
- the supply nozzle can be removed without removing the element.
- the take-out means may include a take-out member capable of taking out the mirror without removing the supply nozzle of the target material.
- the mirror can be removed without removing the supply nozzle. Therefore, it is not necessary to remove and position the supply nozzle each time the mirror is removed, and the trouble of adjusting the plasma generation position (alignment of the target material injection position) can be saved.
- the X-ray transmission filter is attached to the outer surface side of the vacuum chamber, and the extracting means includes an extracting member arranged in the exposure chamber connected to the downstream side of the vacuum chamber. Can be provided. In this case, the X-ray transmission filter 1 can be removed from one side of the exposure chamber without removing the elements in the vacuum chamber.
- An X-ray generator for converting a target material into plasma in a vacuum chamber and radiating X-rays from the plasma, wherein elements such as a mirror and an X-ray transmission filter to which X-rays from the plasma enter first.
- a special take-out window is provided in the vacuum chamber for taking out the element having a high replacement frequency from the vacuum chamber.
- a dedicated take-out window is provided for an element that is frequently exchanged, so that another element that does not need to be taken out can be replaced without moving.
- An exposure apparatus includes the above-described X-ray generator, and an X-ray generator.
- An illumination optical system that irradiates the mask with the X-rays obtained, and a projection optical system that projects light reflected from the mask onto a sensitive substrate to form an image.
- the term “element” as used in the present invention refers to all exchange elements that are indispensable for performance as components of a light source system, an illumination system, and a projection system of an exposure apparatus.
- the elements referred to in the present invention include elements (metal fittings, etc.) for attaching each element to a vacuum chamber or the like, and elements constituting a cooling mechanism for cooling a mirror or the like.
- FIG. 1 is a diagram showing an overall configuration of an exposure apparatus according to one embodiment of the present invention.
- FIG. 2 is a view showing an X-ray generator of an exposure apparatus according to a second embodiment of the present invention.
- FIG. 3 is a view showing an X-ray generator of an exposure apparatus according to a third embodiment of the present invention.
- FIG. 4 is a sectional view showing an example of a conventional liquid jet X-ray generator. BEST MODE FOR CARRYING OUT THE INVENTION
- FIG. 1 is a diagram showing an overall configuration of an exposure apparatus according to one embodiment of the present invention.
- an exposure apparatus using a laser plasma light source will be described as an example, but the present invention is also applicable to an exposure apparatus using a discharge plasma light source or the like.
- a liquid jet type X-ray generator 1 is provided at the most upstream side (upper part in the figure) of the optical system of the exposure apparatus shown in FIG.
- the X-ray generator 1 includes a light source chamber 10.
- the light source chamber 110 is provided with a vacuum pump 12.
- the inside of the light source chamber 10 is evacuated by the vacuum pump 12.
- plasma X rays radiated from P are not attenuated.
- a nozzle 11 is disposed in the light source chamber 10.
- the nozzle 11 is connected to a pipe 13 connected to a liquid gas cylinder (not shown).
- a support member 14 is provided between the pipe 13 and the inner surface of the light source chamber 10 to determine the position of the nozzle 11 and prevent the pipe 13 from shifting.
- the liquid gas cylinder is filled with a target gas such as xenon (Xe) and a liquid such as water.
- Xe xenon
- the liquid gas in the liquid gas cylinder is sent to the nozzle 11 via the pipe 13 and is ejected from the tip of the nozzle 11 into the light source chamber 10.
- the ejected liquid gas becomes the target material when generating plasma.
- liquids not only liquids but also gases and solids can be used.
- a solid target such as tin
- a tape winding type in which a solid material is formed on the tape, or a tape is formed from the solid material itself, and a position to be irradiated with the laser is gradually changed can also be used.
- a mirror (first mirror) 15 is mounted via a mount 16 and a slide mechanism 25.
- the mirror 15 is an elliptical mirror having a mortar-shaped reflecting surface 15a in this example.
- the reflective surface 15a of the mirror 15 is coated with a Mo / Si multilayer film, for example.
- X-rays radiated from the plasma X-rays with a wavelength of about 13.4 nm are reflected by the reflecting surface 15a of the mirror 15 and become an X-ray beam, which is a downstream optical system (Fig. Side).
- a flange member (extraction member) 20 is provided on an outer wall portion (lower right side in FIG. 1) of the light source chamber 10.
- the flange member 20 is a member for closing an opening for taking out an element such as the mirror 15 out of the chamber 10 and is attachable to and detachable from the outer surface of the light source chamber 10.
- the flange 13 is provided with the base end side of the pipe 13 of the nozzle 11 described above. By removing the member 20, the nozzle 11 can be taken out of the light source chamber 10. Can be. If the mirror 15 is in the way when removing the nozzle 11, use the slide mechanism 25 to slide the mirror 15 upward in FIG. Then, after removing and replacing the nozzle 11, slide the mirror 15 downward in FIG. 1 to return it to its original position.
- a light collecting mechanism 18 including a light collecting lens 17 is attached to the outer wall of the light source chamber 10 above the flange member 20 (upper right side in FIG. 1).
- a laser light source 19 is disposed on the right side in FIG. 1 of the light collecting mechanism 18.
- the condenser lens 17 condenses the laser light L emitted from the laser light source 19 to the tip of the nozzle 11. When the collected laser light L is irradiated on the liquid gas, plasma P is generated, and X-rays are radiated from the plasma P.
- the lower surface of the light source chamber 10 is provided with an opening 10a for allowing X-ray light to pass therethrough.
- an X-ray transmission filter 21 is disposed at a position covering the opening 10a.
- the X-ray transmission filter 21 is a thin film made of beryllium (Be) or the like, and cuts visible-ultraviolet light from plasma.
- the laser beam L emitted from the laser light source 19 passes through the condenser lens 17 and is focused on the nozzle 11 directly.
- the liquid gas ejected from the nozzle 11 becomes hot due to the energy of the collected laser light L and becomes plasma.
- Generate X-rays are emitted when ions in this plasma transition to a low potential state.
- the X-rays incident on the mirror 15 the X-rays having a wavelength of about 13.4 nm are reflected by the mirror reflecting surface 15 a to become an X-ray luminous flux E, and the light source chamber 1
- the light is guided from the downstream side of 10 to the subsequent optical system.
- the X-ray generator 1 When the X-ray generator 1 has been operated for a certain period of time, particles scattered from the plasma P accumulate on the ejection port of the nozzle 11 and the reflecting surface 15 a of the mirror 15. In this case, it is necessary to replace the nozzle with a new one.
- the most frequently replaced element in a liquid jet X-ray generator is nozzle 11.
- the X-ray generator 1 of the present embodiment when replacing the nozzle 11, it is only necessary to remove the flange member 20, and the mirror 15 and the X-ray transmission filter 1 that are less frequently replaced than the nozzle 11 are replaced. 2 1 or the condenser lens 17 ⁇ It is not necessary to remove the condenser mechanism 18.
- the replacement work of the nozzle 11 is easy. Further, the alignment of the apparatus does not deviate due to the removal of the condenser lens 17 ′ and the condenser mechanism 18 and the like.
- an exposure chamber 140 is provided below the X-ray generator 1.
- An illumination optical system 46 is arranged in the exposure chamber 40.
- the illumination optical system 46 is composed of a condenser mirror, a fly-eye optical mirror, etc., and adjusts the X-rays reflected by the mirror 15 into an arc shape. Irradiate toward.
- An X-ray reflecting mirror 42 is disposed on the left side of the illumination optical system 46 in FIG.
- the X-ray reflecting mirror 42 has a circular shape with a concave reflecting surface 42a on the right side in FIG. 1, and is vertically held by a holding member (not shown).
- the optical path bending reflecting mirror 41 is arranged diagonally.
- a reflection type mask 43 is horizontally disposed so that the reflection surface faces down. The X-rays emitted from the illumination optical system 46 are reflected and converged by the X-ray reflecting mirror 42, and then reach the reflecting surface of the reflective mask 43 via the optical path bending reflecting mirror 41.
- the bases of the reflecting mirrors 41 and 42 are made of a quartz substrate on which the reflecting surface 42a is processed with high precision.
- the reflecting surface 4 2a has the reflecting surface of the mirror 15 of the X-ray generator. 09398
- a multilayer film of Mo / Si is formed.
- substances such as Ru (ruthenium) and R (rhodium), Si, Be (beryllium), B4C (carbon tetraboride), etc. It may be a multilayer film in which the above materials are combined.
- a reflection film made of a multilayer film is also formed on the reflection surface of the reflection type mask 43.
- a mask pattern corresponding to the pattern to be transferred to the wafer 49 is formed on the reflection film.
- the reflection type mask 43 is fixed to a mask stage 45 shown above.
- the mask stage 45 is movable in at least the Y direction, and sequentially irradiates the mask 43 with the X-rays reflected by the optical path bending reflecting mirror 41.
- the projection optical system 47 is composed of a plurality of reflecting mirrors and the like, reduces the X-rays reflected by the reflective mask 43 to a predetermined reduction magnification (for example, 1/4), and forms an image on the wafer 49.
- the wafer 49 is fixed to the wafer stage 44 movable in the XYZ directions by suction or the like.
- the illumination optical system 46 irradiates the reflective surface of the reflective mask 43 with X-rays.
- the reflective mask 43 and the wafer 49 are relatively synchronously scanned with respect to the projection optical system 47 at a predetermined speed ratio determined by the reduction magnification of the projection optical system.
- the entire circuit pattern of the reflective mask 43 is transferred to each of a plurality of shot areas on the wafer 49 by a step-and-scan method.
- the chips of the wafer 49 are, for example, 25 ⁇ 25 mm square.
- FIG. 2 is a view showing an X-ray generator of an exposure apparatus according to a second embodiment of the present invention.
- the X-ray generator 50 shown in Fig. 2 is shown in Fig. 1: Compared with the X-ray generator 1, the X-ray generator 50 is largely different in the following two points.
- the X-ray generator 50 in FIG. 2 is a gas type. That is, the pipe 13 connected to the nozzle 11 is connected to a gas cylinder (not shown). Gaspo The inside of the container is filled with a target gas such as krypton (Kr). The target gas in the gas cylinder is sent to the nozzle 11 via the pipe 13, and is ejected from the tip of the nozzle 11 into the light source chamber 10. The ejected target gas becomes the target material when generating plasma.
- a target gas such as krypton (Kr).
- a second flange member 51 is provided on the upper end surface of the light source chamber 110.
- the flange member 51 is a member (extraction member) for closing an opening on the upper end side of the light source chamber 110, and is attachable to and detachable from the light source chamber 110.
- the mirror 15, the nozzle 11, and the X-ray transmission filter 21 are frequently replaced in this order.
- the X-ray generator 50 of this embodiment by removing the flange member 51 and opening the upper end surface of the light source chamber 110, the mirror 16 which is most frequently replaced can be removed. In that case, there is no need to remove the nozzle 11 and the X-ray transmission filter 21 that are less frequently replaced than the mirror 15, or the condenser lens 17 and the condenser mechanism 18. Therefore, there is no need to remove or reposition the nozzle 11 each time the mirror 15 is removed, and it is possible to save the trouble of adjusting the plasma generation position (positioning the target material for injection). .
- the flange member 51 When the flange member 51 is provided as shown in FIG. 2, even if the aforementioned flange member 20 is not provided, the mirror 15, the nozzle 11, and the X-ray transmission filter 21 are arranged in the order of the light source chamber 10. It can be removed from the upper end side. For this reason, when the easiness of production of the device is impaired, the flange member 20 need not be provided. However, considering the convenience of removing the nozzle 11 and the X-ray transmission filter 21, it is more convenient to use both flange members 51, 20 together. Although the gas-type X-ray generator has been described, the flange member 51 can be installed in the above-described liquid jet-type X-ray generator, and in this case also, the removal operation can be simplified. 2003/009398
- FIG. 3 is a view showing an X-ray generator of an exposure apparatus according to a third embodiment of the present invention.
- the X-ray generator 60 shown in FIG. 3 differs greatly from the X-ray generator 50 shown in FIG. 2 mainly in the following two points.
- the X-ray transmission filter 21 is attached to the outer surface of the light source chamber 110.
- An aperture plate 23 is arranged directly below the X-ray transmission filter 21.
- the aperture plate 23 is a disk having a pinhole 23 a in the center.
- the diameter of the pinhole 23a is about one example.
- the X-ray beam reflected by the mirror 15 passes through the pinhole 23a of the aperture plate 23 and reaches the optical system at the subsequent stage (see FIG. 1). At this time, the portion around the pinhole 23a of the aperture plate 23 blocks scattered X-rays (leakage light).
- the one corresponding to the aperture plate 23 is also present in the apparatus of FIG. 1, but is not shown.
- a third flange member 61 is provided on a side surface of the exposure chamber 40 (see FIG. 1) downstream of the light source chamber 10.
- the flange member 61 is provided so as to be attachable / detachable to / from the exposure chamber 40 upstream of the illumination optical system 46 (see FIG. 1) inside the exposure chamber 140.
- FIG. 3 the same components as those of the X-ray generators 1 and 50 in FIGS. 1 and 2 are denoted by the same reference numerals.
- the flange member 20 is used to remove the nozzle 11
- the flange member 51 is used to remove the mirror 15
- the X-ray transmission filter 21 is used.
- the flange member 61 can be replaced by removing it.
- the flange member corresponding to each element can be removed and carried out from the exclusive take-out window for replacement regardless of the replacement frequency of each element. In this case, there is no need to remove other elements that are not the replacement target.
- the aperture plate 23 basically transmits most of the X-ray beams through the pinhole 23a, the performance does not deteriorate much.
- scattering Replacement is necessary because the area around the pinhole 23a is illuminated by the X-rays (leakage light) and deteriorates. Also in that case, the flange plate 61 can be removed and the opening plate 23 can be replaced. The invention's effect
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- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- General Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Environmental & Geological Engineering (AREA)
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Abstract
Description
Claims
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004539457A JPWO2004030423A1 (ja) | 2002-09-24 | 2003-07-24 | X線発生装置及び露光装置 |
AU2003248107A AU2003248107A1 (en) | 2002-09-24 | 2003-07-24 | X-ray generating device and exposure device |
EP03798368A EP1545168A4 (en) | 2002-09-24 | 2003-07-24 | X-RAY GENERATING DEVICE AND EXPOSURE DEVICE |
US11/084,380 US7145987B2 (en) | 2003-07-24 | 2005-03-18 | X-ray-generating devices and exposure apparatus comprising same |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2002-276967 | 2002-09-24 | ||
JP2002276967 | 2002-09-24 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US11/084,380 Continuation US7145987B2 (en) | 2003-07-24 | 2005-03-18 | X-ray-generating devices and exposure apparatus comprising same |
Publications (1)
Publication Number | Publication Date |
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WO2004030423A1 true WO2004030423A1 (ja) | 2004-04-08 |
Family
ID=32040390
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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PCT/JP2003/009398 WO2004030423A1 (ja) | 2002-09-24 | 2003-07-24 | X線発生装置及び露光装置 |
Country Status (4)
Country | Link |
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EP (1) | EP1545168A4 (ja) |
JP (1) | JPWO2004030423A1 (ja) |
AU (1) | AU2003248107A1 (ja) |
WO (1) | WO2004030423A1 (ja) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007110107A (ja) * | 2005-09-27 | 2007-04-26 | Asml Netherlands Bv | 光学要素上の堆積物の装置外での除去 |
JP2008118020A (ja) * | 2006-11-07 | 2008-05-22 | Komatsu Ltd | 極端紫外光源装置用コレクタミラー交換装置及び交換方法 |
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JP2000047000A (ja) * | 1998-07-31 | 2000-02-18 | Shimadzu Corp | レーザ励起型x線源 |
JP2000091216A (ja) * | 1998-09-17 | 2000-03-31 | Nikon Corp | 露光装置、該露光装置の調整方法、及び露光方法 |
JP2002252162A (ja) * | 2001-02-26 | 2002-09-06 | Nikon Corp | X線反射マスク、その保護方法、x線露光装置及び半導体デバイスの製造方法 |
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US6285743B1 (en) * | 1998-09-14 | 2001-09-04 | Nikon Corporation | Method and apparatus for soft X-ray generation |
US6727980B2 (en) * | 1998-09-17 | 2004-04-27 | Nikon Corporation | Apparatus and method for pattern exposure and method for adjusting the apparatus |
US6190835B1 (en) * | 1999-05-06 | 2001-02-20 | Advanced Energy Systems, Inc. | System and method for providing a lithographic light source for a semiconductor manufacturing process |
-
2003
- 2003-07-24 JP JP2004539457A patent/JPWO2004030423A1/ja not_active Withdrawn
- 2003-07-24 EP EP03798368A patent/EP1545168A4/en not_active Withdrawn
- 2003-07-24 WO PCT/JP2003/009398 patent/WO2004030423A1/ja active Application Filing
- 2003-07-24 AU AU2003248107A patent/AU2003248107A1/en not_active Abandoned
Patent Citations (3)
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JP2000047000A (ja) * | 1998-07-31 | 2000-02-18 | Shimadzu Corp | レーザ励起型x線源 |
JP2000091216A (ja) * | 1998-09-17 | 2000-03-31 | Nikon Corp | 露光装置、該露光装置の調整方法、及び露光方法 |
JP2002252162A (ja) * | 2001-02-26 | 2002-09-06 | Nikon Corp | X線反射マスク、その保護方法、x線露光装置及び半導体デバイスの製造方法 |
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Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007110107A (ja) * | 2005-09-27 | 2007-04-26 | Asml Netherlands Bv | 光学要素上の堆積物の装置外での除去 |
US7767989B2 (en) | 2005-09-27 | 2010-08-03 | Asml Netherlands B.V. | Ex-situ removal of deposition on an optical element |
US8134136B2 (en) | 2005-09-27 | 2012-03-13 | Asml Netherlands B.V. | Ex-situ removal of deposition on an optical element |
US8598550B2 (en) | 2005-09-27 | 2013-12-03 | Asml Netherlands B.V. | Ex-situ removal of deposition on an optical element |
JP2008118020A (ja) * | 2006-11-07 | 2008-05-22 | Komatsu Ltd | 極端紫外光源装置用コレクタミラー交換装置及び交換方法 |
US8477412B2 (en) | 2006-11-07 | 2013-07-02 | Gigaphoton Inc. | Collector mirror exchanging apparatus and method for extreme ultraviolet light source apparatus |
US8804902B2 (en) | 2006-11-07 | 2014-08-12 | Gigaphoton Inc. | Collector mirror exchanging apparatus and method for extreme ultraviolet light source apparatus |
Also Published As
Publication number | Publication date |
---|---|
AU2003248107A1 (en) | 2004-04-19 |
EP1545168A1 (en) | 2005-06-22 |
EP1545168A4 (en) | 2009-04-15 |
JPWO2004030423A1 (ja) | 2006-01-26 |
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