WO2003094212A1 - Systeme d'alignement, procede d'alignement et procede de production pour dispositif semi-conducteur - Google Patents

Systeme d'alignement, procede d'alignement et procede de production pour dispositif semi-conducteur Download PDF

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Publication number
WO2003094212A1
WO2003094212A1 PCT/JP2003/005275 JP0305275W WO03094212A1 WO 2003094212 A1 WO2003094212 A1 WO 2003094212A1 JP 0305275 W JP0305275 W JP 0305275W WO 03094212 A1 WO03094212 A1 WO 03094212A1
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WIPO (PCT)
Prior art keywords
alignment
optical axis
wafer
optical
optical system
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PCT/JP2003/005275
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English (en)
Japanese (ja)
Inventor
Shinichi Mizuno
Hiroki Hane
Kaoru Koike
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Sony Corporation
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Publication of WO2003094212A1 publication Critical patent/WO2003094212A1/fr

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7049—Technique, e.g. interferometric
    • G03F9/7053—Non-optical, e.g. mechanical, capacitive, using an electron beam, acoustic or thermal waves

Definitions

  • the present invention relates to an alignment apparatus and an alignment method for performing relative alignment between an exposure mask and a wafer as an object to be exposed during a lithographic process in a semiconductor device manufacturing process, and a method of manufacturing a semiconductor device.
  • a method of manufacturing a semiconductor device is about. Background technique
  • EB In the contact exposure apparatus and the X-ray exposure apparatus, an alignment apparatus that detects and positions the relative position between the exposure mask and the wafer in real time is used. This is because it is necessary to perform real-time alignment (alignment) because the exposure mask and the wafer may be misaligned during exposure.
  • real-time alignment alignment
  • the EB contact exposure apparatus since exposure is performed in a vacuum, positional drift due to thermal strain, position fluctuation due to vibration of the apparatus, and the like occur, and the possibility of the above-described relative displacement increases.
  • Reasons for the occurrence of position drift and position fluctuation include the following 1 to 1.
  • the alignment optical system using long-wavelength light is roughly classified into (1) so-called image formation, which forms an alignment mark written on an exposure mask and wafer and performs image processing to detect the mark position. And (2) the so-called interference method in which the phase of the diffracted wave by the grating written on the mask and wafer is detected by a laser interferometer.
  • image formation which forms an alignment mark written on an exposure mask and wafer and performs image processing to detect the mark position.
  • the so-called interference method in which the phase of the diffracted wave by the grating written on the mask and wafer is detected by a laser interferometer.
  • LEEPL Low energy electron beam roximity projection 1 i thogr aphy ⁇
  • LEEPL Low energy electron beam roximity projection 1 i thogr aphy ⁇
  • NA numerical aperture
  • the optical axis must be tilted to about 40 °, which is limited to about NA 0.35. It is difficult to illuminate from an appropriate direction such that the alignment mark becomes a dark-field illumination from a direction in which the alignment mark is observed brightly, for example, Japanese Patent No. 2955566, Patent No. 30.
  • FIG. 8 shows a specific example of the arrangement of the alignment mark and the optical system when performing the alignment.
  • epi-illumination is performed at an incident angle of, for example, 40 °, and the alignment mark 51 is observed in a dark field.
  • the alignment in the direction perpendicular to the incident surface and the alignment between the exposure mask and the wafer are performed.
  • the term “incident surface” as used herein refers to a surface where the optical axis of the objective lens 52 and the normal of the mask and the wafer come together.
  • the optical axis of the illumination light to the alignment mark 51 must be greatly inclined in order to prevent the alignment optical system from interfering with the exposure EB, the exposure X-ray, and the like. The following problems may occur.
  • the alignment mark 51 must be observed in the dark field with light scattered laterally at a large angle of 80 °, and the resulting image The strength becomes small.
  • the alignment mark 51 is rectangular and comprises a first edge 51 a perpendicular to the plane of incidence and a second edge 5 lb parallel to the first edge 51 a. If the alignment mark 51 is sufficiently smaller than the wavelength, both the diffracted light from the first edge 51a and the diffracted light from the second edge 51b are isotropically spread.
  • the diffracted light by the first edge 51 a perpendicular to the optical axis spreads isotropically in the incident surface, but the second edge 5 parallel to the incident surface
  • the diffracted light by 1b has a distribution having directivity in the regular reflection direction opposite to the objective lens 52. For this reason, the amount of scattered light incident on the objective lens 52 becomes larger in the diffracted light by the first edge 51 a than in the diffracted light by the second edge 51 b, and the image intensity of the first edge 51 a is increased. Becomes stronger than the image intensity of the second edge 51b.
  • the image intensity distribution of the first edge 51a is marked 'Since the shape is easily changed by the shape distortion of the corner, the intensity distribution of the mark image is also easily changed by the shape distortion of the mark corner, and as a result, a detection error may increase.
  • first edges 5la are arranged and these are averaged. This is because the position of the first edge 51a is averaged in the length direction so that the mark position can be detected with high accuracy.
  • many arrangements of the first edges 51a are not preferable because the alignment marks 51 become complicated and large, and the processing load increases due to averaging and the like.
  • the interference method when the interference method is applied to LEEPL, even a narrow laser beam with a convergence angle of 0.1 rad or less can be detected, so that the alignment optical system becomes small and interferes with the components of the exposure apparatus and the exposure EB. Less. Therefore, it is considered that the incident angle can be made smaller and the amount of detected light can be made larger than in the case of the imaging method.
  • the distance between the mask and the wafer may not be aligned. In the direction perpendicular to the incidence plane, the position is uncertain by an integral multiple of the grating period, so a coarse alignment device different from this alignment device is required. Alignment can be performed with high accuracy by detecting with an interferometer.
  • the diffracted light may be reduced depending on the shape of the grating, and in that case, the phase of the diffracted light may not be detected.
  • This problem can be solved by using a plurality of lasers with different wavelengths or by using a tunable laser.However, the structure of the alignment optical system is complicated, and it is expensive. Therefore, it is not suitable.
  • LEEPL masks typically have lattice beams to reinforce the strength, and the beams divide the mask into cells. Therefore, if the optical axis is greatly inclined, the beam is blocked by the beam, so that the area where the alignment mark 51 can be arranged is limited to the area not affected by the beam. Specifically, for example, as shown in FIG. 9, since the optical axis is inclined, the presence of the beam 53 a perpendicular to the optical axis causes the beam 53 a near the beam 53 b facing the objective lens 52. The write area is limited, and the write area is limited near the center of each cell by the beam 53 c parallel to the optical axis.
  • the present invention enables the position of an alignment mark to be detected without interfering with the exposure EB, the exposure X-ray, and the like without greatly tilting the optical axis. It is an object of the present invention to provide an alignment apparatus and an alignment method capable of detecting an alignment at a high speed, and consequently realizing high precision alignment. Disclosure of the invention
  • the present invention has been devised to achieve the above object, and comprises an optical system for optically detecting an alignment mask disposed on each of an exposure mask and a wafer as an object to be exposed.
  • An alignment apparatus for performing relative positioning between the exposure mask and the wafer based on a detection result by an optical system, comprising: a slit on the optical path of the optical system for narrowing a light beam of the optical path; and the slit.
  • Optical axis converting means for bending the optical axis direction of the optical path after the passage.
  • the present invention provides a method devised to achieve the above object, using an exposure mask and an optical system for optically detecting an alignment mark arranged on each of a wafer as an object to be exposed, Based on the detection result of the optical system
  • An alignment method for performing relative alignment between the exposure mask and the laser beam wherein a light beam of the optical path is narrowed by a slit provided on an optical path of the optical system, and the light beam is narrowed by the slit.
  • the optical path of the bent optical path is bent, and the bent optical path reaches the wafer to detect the alignment mark.
  • the alignment apparatus having the above configuration and the alignment method having the above procedure
  • the optical system uses an objective lens having an NA of about 0.35
  • only the mirrors and prisms are used in consideration of the light beam diameter. It is difficult to bend the optical axis, but even in this case, the slit on the optical path of the optical system narrows the luminous flux of the optical path, so the optical axis direction of the optical path after the luminous flux is narrowed is mirrored. It can be easily bent using an optical axis conversion means such as a prism or a prism.
  • the alignment can be performed while avoiding interference with the exposure EB, the exposure X-ray, or mechanical parts such as a mask stage without greatly inclining the incident angle with respect to the alignment mark.
  • the position of the mark can be detected.
  • the resolution of the optical system does not decrease in the alignment direction in which the relative alignment is performed, so that the alignment accuracy does not decrease.
  • FIG. 1A to 1C are schematic diagrams showing an example of a schematic configuration of a first embodiment of an alignment apparatus according to the present invention.
  • FIG. 1A is a side view of a schematic configuration of an optical system portion.
  • FIG. 1B is a plan view of an essential part thereof, and
  • FIG. 1C is a plan view showing an alignment mark.
  • FIGS. 2A to 2C are schematic diagrams showing another example of the schematic configuration of the alignment device according to the first embodiment of the present invention, and FIG. 2A is an optical device.
  • PC brutality 75 is an optical device.
  • FIG. 7 A side view of the schematic configuration of the academic system
  • Fig. 2B is a plan view of the main part
  • Fig. 2C is a plan view showing the alignment mark.
  • FIG. 3A to 3B are explanatory diagrams showing specific examples of the point image intensity distribution.
  • FIG. 3A shows a case of a circular pupil having no slit
  • FIG. 3B shows a slit. It is a figure showing the case where a rectangle has a rectangular pupil.
  • FIG. 4A to 4B are explanatory diagrams showing a specific example of the image intensity distribution of an edge
  • FIG. 4A is a diagram showing a case of a circular pupil having no slit
  • FIG. It is a figure showing the case of a certain rectangular pupil.
  • FIG. 5 is a schematic diagram showing an example of a schematic configuration of an alignment apparatus according to a second embodiment of the present invention.
  • FIG. 6 is a schematic diagram showing an example of a main configuration of an alignment apparatus according to a third embodiment of the present invention.
  • FIG. 7 is a schematic diagram showing an example of a schematic configuration of an alignment apparatus according to an eighth embodiment of the present invention.
  • FIG. 8 is a schematic diagram (part 1) showing a specific example of the arrangement of the alignment mark and the optical system when performing the alignment (positioning).
  • FIG. 9 is a schematic diagram (part 2) showing a specific example of the arrangement of the alignment mark and the optical system when performing alignment (positioning).
  • FIG. 10 is a flowchart of a method for manufacturing a semiconductor device according to the present invention.
  • FIGS. 1A to 1C are schematic diagrams showing an example of a schematic configuration of the alignment device according to the first embodiment of the present invention.
  • the alignment apparatus described here uses, for example, an EB contact exposure apparatus (not shown) used in the lithography process to determine the relative position between the exposure mask 1 and the wafer 2. It is used to detect and align in real time.
  • the alignment mark written on the exposure mask 1 and the wafer 2 is imaged, the image processing is performed to detect the mark position, and based on the detection result, one of the exposure mask 1 and the wafer 2 is detected. One or both are moved in the direction perpendicular to the plane of incidence (see Fig. 8) to align them.
  • one alignment device performs alignment in one direction perpendicular to the incident surface.
  • the EB contact exposure apparatus is equipped with a plurality of alignment apparatuses (for example, for four directions), and by these, the X-Y direction, the rotation direction, and the magnification between the exposure mask 1 and the wafer 2 are provided. And so on.
  • each alignment apparatus includes an optical device for optically detecting an alignment mark disposed on each of the exposure mask 1 and the wafer 2.
  • It has cameras 24 a and 24, a slit 31, and a prism 32.
  • Parts other than the optical system such as an image processing system that processes the detection result of the alignment mark, and an adjustment stage system that moves one or both of the exposure mask 1 and the wafer 2 are almost the same as conventional ones. Therefore, illustration and detailed description thereof in the drawings are omitted here.
  • the illumination optical system composed of the light source 11, the field stop unit 12, the condenser lens 13 and the beam splitter 14 is almost the same as the conventional one.
  • Koehler illumination using a white xenon lamp, an alkali halide lamp, or the like can be used as the light source 11.
  • the exposure device performs EB exposure in a vacuum
  • the light source 11 is placed outside the vacuum container, and the irradiation light is emitted into the vacuum container using a light guide made of, for example, a fiber bundle. It is desirable to be configured to guide.
  • the observation optical system including the objective lens 21, the beam splitter 22, the imaging lenses 23a and 23b, and the CCD cameras 24a and 24b is almost the same as the conventional one.
  • the two imaging lenses 23a and 23b and the two CCD cameras 24a and 24b are provided for the following reasons.
  • the alignment mark on the exposure mask 1 hereinafter, referred to as “mask mark”
  • the alignment mark on the wafer 2 hereinafter, “wafer mark”
  • the beam splitter 22 separates the light into two optical paths, and forms the imaging lenses 23a and 23b and the CCD camera 24a.
  • the alignment device described in the present embodiment has a great feature in that the optical system includes a slit 31 and a prism 32.
  • the slit 31 is disposed between the beam splitter 14 and the objective lens 21 and has a rectangular opening through which light emitted from the illumination optical system is transmitted. It narrows the beam diameter of the light path from the camera. However, in the slit 31, the longitudinal direction of the rectangular opening is such that the relative movement direction at the time of aligning the exposure mask 1 and the wafer 2, that is, perpendicular to the incident surface of the illumination optical system. They are distributed along the direction.
  • the prism 32 is disposed between the objective lens 21 and the exposure mask 1, and bends the optical axis of the optical path by deflecting the optical path after passing through the slit 31. That is, the prism 32 functions as an optical axis conversion unit that bends the optical axis direction of the optical path. However, the prism 32 need not necessarily be provided as long as it functions as an optical axis conversion means. For example, as shown in FIGS. 2A to 2C, a plurality of mirrors 3 may be used.
  • these prisms 32 or mirrors 33a and 33b are arranged near the exposure mask 1, they interfere with EB exposure (in some cases, X-ray exposure) to the exposure mask 1. It is arranged so as not to be directly above the exposure mask 1 so that it does not occur.
  • the mask mark and wafer mark detected using the optical system having the above-described configuration are arranged in advance on the exposure mask 1 and the wafer 2 so as to individually correspond to the respective alignment devices on the exposure apparatus.
  • at least the size L in the direction orthogonal to the alignment direction is ⁇ to 5 ⁇ (where ⁇ is the wavelength of the irradiation light). Long). More specifically, when the wavelength of the irradiation light is ⁇ and the irradiation angle of the irradiation light is ⁇ , it is desirable that the size L satisfies L ⁇ «A / (2 ⁇ ) (4) . With such a size, light easily returns to the objective lens 21, and the influence of the directivity of light upon detection can be eliminated as much as possible, and an extra large space is required for arrangement. Because there is nothing.
  • the slit 31 and the prism 32 or the mirrors 33a and 33b are provided on the optical path of the optical system.
  • the light beam diameter is reduced by the slit 31, then the light beam is bent by the prism 32 or the mirrors 33 a, 33 b, and the bent light beam reaches the exposure mask 1 and the wafer 2.
  • the mask mark and the wafer mark are imaged on the CCD cameras 24a and 24b via the microscope, and their positions are determined by image processing to detect the amount of displacement between the exposure mask 1 and the wafer 2. I do.
  • the prism 32 or the mirrors 33a and 33b are simply placed between the objective lens 21 and the exposure mask 1. It is difficult to bend the optical axis simply by placing it, considering the beam diameter.
  • the slit 31 is placed on the pupil of the objective lens 21 of the microscope to reduce the beam diameter in the direction perpendicular to the incident surface, so that the prism 32 or the mirror 33a, 33 b can easily bend the direction of the optical axis.
  • the optical axis direction it is possible to reduce the inclination angle of the optical axis with respect to the mask mark and the wafer mark. That is, by bending the optical axis direction, the prism 32 or the mirror 33a, 33b is formed.
  • the optical axis for the mask mark and the wafer mark can be made closer to vertical while not obstructing EB exposure and the like. Then, as the optical axis with respect to the mask mark and the wafer mark approaches vertical, the second edge 51b (see FIG. 8) of the mask mark and the wafer mark is parallel to the incident surface. The intensity of the diffracted light from the edge also increases.
  • FIG. 3A to 3B are explanatory diagrams showing a specific example of the point image intensity distribution.
  • FIG. 3A shows a circular pupil without a slit 31
  • FIG. 3B shows a rectangular pupil with a slit 31.
  • the pupil shape is approximated as a rectangle, assuming that the slit 31 is sufficiently smaller than the pupil diameter.
  • 4A to 4B show a specific example of the image intensity distribution of the edge.
  • 4A shows a circular pupil
  • FIG. 4B shows a rectangular pupil.
  • the edge length is 1 m
  • the magnification 100 times.
  • the optical axis with respect to the mask mark and the wafer mark can be made closer to the vertical.
  • the image intensity of the mask mark and the wafer mark is increased, and as a result, the position detection accuracy of the mask mark and the wafer mark is improved.
  • the averaging can improve the position detection accuracy.
  • the resolution of the detection result at this time is such that since the longitudinal direction of the rectangular opening in the slit 31 is arranged along the direction perpendicular to the incident surface, the luminous flux diameter is reduced in the incident surface direction. Even if it is reduced by reduction, it is reduced in the direction perpendicular to the incident surface, that is, in the alignment direction. None. Therefore, even if the slit 31 allows bending in the optical axis direction, the slit 31 does not lower the alignment accuracy.
  • the beam is used by the beam. Obstruction is reduced, and a large area can be observed. Therefore, it is possible to secure a wide position where the mask mark and the wafer mark can be written.
  • the beam is less likely to be blocked by the beam, it is possible to use the objective lens 21 having a large NA, and it is expected that the resolving power will be improved accordingly.
  • FIG. 5 is a schematic diagram showing an example of a schematic configuration of an alignment apparatus according to a second embodiment of the present invention.
  • the alignment apparatus described here differs from the first embodiment in that the optical axis of the microscope is perpendicular to the exposure mask 1 and the wafer 2.
  • the optical system for detecting the alignment mark includes a light guide 15 connected to a light source, a collimator lens 16, a beam splitter 17, and an objective lens.
  • a lens 21, an imaging lens 23, a CCD camera 24, a piezo stage 25, a slit 31, and mirrors 33 a and 33 b are provided.
  • the alignment device described in the present embodiment has a great feature in the arrangement of the slits 31.
  • the mask mark and the wafer mark are observed in a bright field. If at least one of them has a concavo-convex structure, the observation becomes very difficult. That is, with respect to an alignment mark having a concave-convex structure, it is easier to detect the alignment mark by performing dark-field observation such as when the optical axis is inclined.
  • the rectangular opening in the slit 31 is arranged so as to be off the center of the optical axis of the microscope in the optical system. More specifically, the rectangular opening in the slit 31 is arranged so as to be located only on one half of the pupil of the objective lens 21. At this time, it is desirable that the edge of the rectangular aperture coincides with the center of the pupil of the objective lens 21 (see FIG. 5).
  • the slits 31 By arranging the slits 31 in this manner, it is possible to perform a dark field observation of the mask mark and the wafer mark.
  • the alignment mark of the uneven structure is darkened. It can be observed in a visual field. Therefore, even when the angle of incidence with respect to the alignment mark of the uneven structure is substantially perpendicular, the image intensity is low. As a result, detection becomes easier, and as a result, the position detection accuracy of the mask mark and the wafer mark is improved. That is, it is possible to prevent the alignment accuracy from being lowered by realizing dark field observation.
  • FIG. 6 is a schematic diagram showing an example of a main configuration of an alignment apparatus according to a third embodiment of the present invention.
  • the alignment device described here differs from the first or second embodiment in that a coherent laser light source 11 such as a semiconductor laser (Laser Diode; LD) is used as a light source lamp.
  • a coherent laser light source 11 such as a semiconductor laser (Laser Diode; LD) is used as a light source lamp.
  • LD Laser Diode
  • the aperture is narrowed by the slit 31 and the brightness of the image is reduced.
  • a light source that irradiates a laser beam for example, a coherent light source such as a semiconductor laser is used as a light source having higher luminance than the white lamp.
  • the coherent laser light source 11 when used, there is a possibility that the scattering noise may cause an error. Therefore, in such a case, it is necessary to remove speckle noise and prevent a detection error from occurring by applying any one or more of the following items 1 to 4 as appropriate. That is, 1 the laser beam is divided into a plurality of light beams, each of them is given an optical path length difference greater than the wave length, and the light beams are overlapped again ⁇ Or (1) Move the diffuser placed in the illumination optical system. Or 3 Super luminescent diode with short coherent length (Super
  • Luminescent Diode S LD
  • S LD Luminescent Diode
  • a Littman laser (Litow) laser Sacher Lasertechnik GmbH, Germany
  • an external resonator type LD and an oscillation spectrum width of 10 nm or more.
  • use 5 L D to superimpose high frequency white noise on the drive power supply.
  • both lens arrays 18a are vibrated using a vibration stage 18b at a frequency sufficiently higher than the field frequency of the CCD camera 24, and both the lens arrays 18a are vibrated.
  • the phase difference should be about ⁇ 2 or more or different frequencies so that the vibrations from the vibration stage 18b are not synchronized.
  • Oscillation amplitude (f a / f obj) (A / NA obj) than large enough, and shall be sufficiently smaller than the element lens diameter of the lens array 1 8 a.
  • f a is the focal length of the element lenses that make up the lens array 18 a
  • ⁇ is the wavelength
  • NA is the NA of the objective lens 21.
  • a cylindrical lens 19 may be placed immediately after the laser light source 11 to shape the light beam.
  • the laser light source 11 when used as the light source lamp, even if the aperture is narrowed by the slit 31 on the pupil of the objective lens 21, the image is Thus, it is possible to avoid a decrease in the brightness of the image, and as a result, the image intensity is increased and its detection is facilitated. That is, it is possible to improve the position detection accuracy of the mask mark and the wafer mark, and to prevent the alignment accuracy from being lowered.
  • the amount of light applied to the thin film mask it is possible to prevent the temperature of the thin film mask from rising, and as a result, the thermal expansion of the mask is reduced, thereby improving the accuracy of drawing the exposure pattern.
  • the alignment device described here uses, in addition to the case of the third embodiment, a dye laser capable of tunable wavelength, a titanium sapphire laser, an Alexandrite laser, or the like as the laser light source 11.
  • a dye laser capable of tunable wavelength a titanium sapphire laser, an Alexandrite laser, or the like as the laser light source 11.
  • the point is a big feature. This makes it very easy to appropriately select a laser having a wavelength that maximizes the image intensity of the wafer mark.
  • the mirrors 33a and 33b (see FIGS. 2A to 2C and FIG. 5) described in the first or second embodiment can be changed in tilt angle.
  • MEM S Micro Electro Mechanical
  • the mirrors 3 3 a and 3 3 b have a deflection adjustment function that adjusts the bending angle in addition to the function to bend the optical axis direction, such as a metal thin film mirror that can control the tilt angle by electrostatic force.
  • a deflection adjustment function that adjusts the bending angle in addition to the function to bend the optical axis direction, such as a metal thin film mirror that can control the tilt angle by electrostatic force.
  • the tilt angle of the mirrors 33 a and 33 b is adjusted so that the upper surface of the exposure mask 1 is adjusted.
  • the observation position on the wafer 2 can be arbitrarily moved. More specifically, the observation position can be moved one-dimensionally when the tilt angle is variable in one direction, and two-dimensionally when the tilt angle is variable in two directions. Also, two mirrors 33 a and 33 b If the tilt angle can be changed in each case, it is possible to adjust the tilt angle in only one direction. By making the adjustment directions orthogonal to each other, the observation position can be two-dimensionally adjusted. You will be able to move.
  • the mirrors 33a and 33b are provided with a deflection adjusting function, the degree of freedom in arranging the mask mark and the wafer mark is increased, and the versatility and flexibility of observation for these can be secured. Therefore, it is very suitable for improving the position detection accuracy of mask marks and wafer marks.
  • the mirrors 33a and 33b (see FIGS. 2A to 2C and FIG. 5) described in the first or second embodiment are used for focusing adjustment.
  • a major feature is that it is a MEMS default mirror that can be used. That is, the mirrors 33a and 33b are made of, for example, a mirror coated or pasted on a bimorph made of a piezoelectric sheet, or a metal thin film mirror whose curvature is controlled by electrostatic force.
  • a focus adjustment function of adjusting the focal position of the optical axis is provided.
  • the mirrors 33 a and 33 b capable of adjusting the focus are used, by adjusting the focus position, it is possible to cope with mask marks and wafer marks arranged at different positions. Become like More specifically, because the microscope optical axis is tilted, the observation position can be changed by changing the focus position, and as a result, the observation position on the exposure mask 1 and wafer 2 can be moved arbitrarily. become. Therefore, if the mirrors 33a and 33b are provided with a focus adjustment function, the degree of freedom in arranging the mask and the wafer mark is increased, and the versatility and flexibility of observation for these are also increased. Therefore, it is very suitable for improving the accuracy of detecting the position of a mask mark and a wafer mark.
  • the MEMS deformable mirror with the focus adjustment function may be provided as mirrors 33a and 33b for bending the optical axis direction. Alternatively, for example, it may be placed between the objective lens 21 and the CCD cameras 24a and 24b.
  • the alignment device described here is one of the mirrors 33a, 33b (see FIGS. 2A to 2C and FIG. 5) described in the first or second embodiment.
  • a major feature is that one is the MEMS tilt mirror described in the fifth embodiment, and the other is the deformable mirror described in the sixth embodiment. That is, in addition to the function of bending the optical axis direction, the mirrors 33a and 33b have a deflection adjustment function for adjusting the bending angle and a focus adjustment function for adjusting the focal position of the optical axis. .
  • the tilt mirror and the deformable mirror are used in combination, even when the deflection due to the tilt mirror becomes large and the defocus occurs, it is possible to perform the focusing with the deformable mirror. It will be possible to respond to this appropriately. That is, it is very easy to arbitrarily move the observation positions on the exposure mask 1 and the wafer 2. Therefore, it is more suitable for improving the position detection accuracy of the mask mark and the wafer mark.
  • FIG. 7 is a schematic diagram showing an example of a schematic configuration of an alignment apparatus according to an eighth embodiment of the present invention.
  • the alignment device described here includes a galvanomirror 3 in front of the pupil of the objective lens 21 in addition to the case of the first embodiment.
  • a major feature is that the position of the alignment mark is scanned by the galvano mirror 34. That is, the deflection adjusting function is realized by the galvanomirror 34. In this case, the galvanomirror 34 and the pupil of the objective lens 21 become conjugate by the relay lenses 35a and 35b.
  • the galvanomirror 34 As described above, even when the galvanomirror 34 is used, by scanning with the galvanomirror 34, the observation position on the exposure mask 1 and the wafer 2 can be arbitrarily moved. Becomes possible. Therefore, it is very suitable for improving the position detection accuracy of mask marks and wafer marks. If two galvanometer mirrors 34 and relay lenses 35a and 35b are arranged and the scanning directions are orthogonal to each other, the observation position can be moved two-dimensionally. It is even more suitable for improving detection accuracy.
  • FIG. 10 shows a flowchart of a method for manufacturing a semiconductor device according to the present invention.
  • An optical system for optically detecting an alignment mark disposed on each of an exposure mask and a wafer as an object to be exposed is used, and a light beam in the optical path is stopped down by a slit provided on the optical path of the optical system (S 1 0 1), the optical axis direction of the optical path after the light beam is narrowed by the slit is bent (S 102), and the bent optical path reaches the wafer to detect the alignment mark (S 102). 103)
  • the relative position between the exposure mask and the wafer is adjusted based on the detection result by the optical system (S104), and the object to be exposed is exposed via the exposure mask.
  • the method includes at least a step of exposing with a charged particle beam or radiation, X-ray, ultra-short ultraviolet light, ultraviolet light, or light (S105), and performs a subsequent semiconductor device manufacturing process (S106) )
  • a method for manufacturing a semiconductor device By including at least a step of exposing an object to be exposed to an electron beam, a charged particle beam such as an ion particle beam, radiation, X-rays, ultrashort ultraviolet light, ultraviolet light, or light rays through an exposure mask, It is suitable to manufacture the device.
  • the position of the alignment mark can be detected without interfering with exposure EB such as electron beam or ion particle beam or exposure X-ray.
  • the present invention can be a means of manufacturing a semiconductor device which is more effective at the time of exposure using a LEEPL mask such as a stencil mask.
  • the slit narrows the light beam of the optical system, the optical axis direction can be easily bent. Therefore, through the bending of the optical axis, the position of the alignment mark can be detected without interfering with the exposure EB, the exposure X-ray, and the like without greatly tilting the optical axis. Moreover, since the light beam is narrowed by the slit, the resolution does not decrease in the alignment direction. In addition, since the optical axis does not need to be greatly inclined, there is a grid-like beam such as a LEEPL mask. Even if it is present, it is possible to minimize the limitation on the writing area of the alignment mark. From these facts, according to the present invention, the mark position can be detected with high accuracy without complicating the alignment mark, and as a result, the alignment accuracy can be improved. It can be said that it can be done.

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Length Measuring Devices By Optical Means (AREA)
  • Electron Beam Exposure (AREA)

Abstract

L'invention concerne un système d'alignement et un procédé d'alignement permettant d'obtenir un alignement de précision élevée, à l'aide d'une position de marque d'alignement détectée sans interférer avec un EB d'exposition, et sans qu'il soit nécessaire d'avoir recours à une inclinaison importante de l'axe optique. Le système d'alignement est doté d'un système optique pour détecter optiquement des marques d'alignement situées respectivement sur un masque d'exposition (1) et sur une plaquette (2), utilisée en tant qu'élément à exposer, et aligne respectivement le masque d'exposition et la plaquette (2), en fonction du résultat de détection obtenu par le système optique. Une fente (31) permettant de restreindre un flux lumineux sur une trajectoire lumineuse, et un moyen de conversion d'axe lumineux permettant d'incurver la direction de l'axe lumineux de la trajectoire lumineuse sont situés sur la trajectoire lumineuse du système optique. Il est ainsi possible de détecter des positions de marque d'alignement sans interférer avec un EB d'exposition ou analogue, car l'inclinaison obtenue par le moyen de conversion d'axe lumineux fait qu'il n'est plus nécessaire d'avoir recours à un angle incident considérablement incliné par rapport aux marques d'alignement.
PCT/JP2003/005275 2002-05-01 2003-04-24 Systeme d'alignement, procede d'alignement et procede de production pour dispositif semi-conducteur WO2003094212A1 (fr)

Applications Claiming Priority (2)

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JP2002129508A JP2003324057A (ja) 2002-05-01 2002-05-01 アライメント装置およびアライメント方法
JP2002-129508 2002-05-01

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WO2003094212A1 true WO2003094212A1 (fr) 2003-11-13

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JP (1) JP2003324057A (fr)
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Publication number Priority date Publication date Assignee Title
US7573580B2 (en) 2003-11-17 2009-08-11 Asml Holding N.V. Optical position measuring system and method using a low coherence light source
JP2005262260A (ja) * 2004-03-17 2005-09-29 Takeji Arai レーザ加工装置及びレーザ加工制御プログラム
TW201317373A (zh) * 2011-10-31 2013-05-01 Au Optronics Corp 蒸鍍設備以及蒸鍍方法
JP2013175684A (ja) * 2012-02-27 2013-09-05 Canon Inc 検出器、インプリント装置及び物品を製造する方法
CN110320757A (zh) * 2018-03-30 2019-10-11 华润微电子（重庆）有限公司 晶圆曝光机
JP7278138B2 (ja) * 2019-04-18 2023-05-19 キヤノン株式会社 基板処理装置、物品製造方法、基板処理方法、基板処理システム、管理装置、およびプログラム

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53121472A (en) * 1977-03-31 1978-10-23 Toshiba Corp Exposure unit
JPS60119722A (ja) * 1983-12-01 1985-06-27 Hitachi Ltd 半導体露光装置用ウエハパタ−ン検出方法及びその装置
JPS6489328A (en) * 1987-09-29 1989-04-03 Matsushita Electric Ind Co Ltd Aligner
JPH01125823A (ja) * 1987-11-10 1989-05-18 Nikon Corp アライメント装置
JPH03291504A (ja) * 1989-12-21 1991-12-20 Toshiba Corp 相対位置合せ方法及び装置、並びにアライメント光学装置
JPH0412523A (ja) * 1990-05-01 1992-01-17 Canon Inc 位置検出装置
JPH06224101A (ja) * 1993-01-26 1994-08-12 Fujitsu Ltd 二重焦点レンズ及び位置合せ装置
US5831272A (en) * 1997-10-21 1998-11-03 Utsumi; Takao Low energy electron beam lithography

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53121472A (en) * 1977-03-31 1978-10-23 Toshiba Corp Exposure unit
JPS60119722A (ja) * 1983-12-01 1985-06-27 Hitachi Ltd 半導体露光装置用ウエハパタ−ン検出方法及びその装置
JPS6489328A (en) * 1987-09-29 1989-04-03 Matsushita Electric Ind Co Ltd Aligner
JPH01125823A (ja) * 1987-11-10 1989-05-18 Nikon Corp アライメント装置
JPH03291504A (ja) * 1989-12-21 1991-12-20 Toshiba Corp 相対位置合せ方法及び装置、並びにアライメント光学装置
JPH0412523A (ja) * 1990-05-01 1992-01-17 Canon Inc 位置検出装置
JPH06224101A (ja) * 1993-01-26 1994-08-12 Fujitsu Ltd 二重焦点レンズ及び位置合せ装置
US5831272A (en) * 1997-10-21 1998-11-03 Utsumi; Takao Low energy electron beam lithography

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JP2003324057A (ja) 2003-11-14

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