WO2019064503A1 - Dispositif à faisceau d'électrons, système optique d'éclairage, et procédé de fabrication de dispositif - Google Patents

Dispositif à faisceau d'électrons, système optique d'éclairage, et procédé de fabrication de dispositif Download PDF

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Publication number
WO2019064503A1
WO2019064503A1 PCT/JP2017/035522 JP2017035522W WO2019064503A1 WO 2019064503 A1 WO2019064503 A1 WO 2019064503A1 JP 2017035522 W JP2017035522 W JP 2017035522W WO 2019064503 A1 WO2019064503 A1 WO 2019064503A1
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WIPO (PCT)
Prior art keywords
optical system
light
illumination
electron beam
optical axis
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PCT/JP2017/035522
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English (en)
Japanese (ja)
Inventor
達郎 西根
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株式会社ニコン
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Priority to PCT/JP2017/035522 priority Critical patent/WO2019064503A1/fr
Priority to TW107133978A priority patent/TW201929028A/zh
Publication of WO2019064503A1 publication Critical patent/WO2019064503A1/fr

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34

Definitions

  • the present invention relates to an electron beam apparatus and a device manufacturing method, and in particular to an electron beam apparatus which irradiates light to a photoelectric element and irradiates an electron generated from the photoelectric element to a target as an electron beam, and a device using the electron beam apparatus. It relates to the manufacturing method.
  • complementary lithography has been proposed in which an immersion exposure technique using an ArF light source and a charged particle beam exposure technique (for example, an electron beam exposure technique) are used complementarily.
  • a simple line and space pattern (hereinafter, appropriately abbreviated as an L / S pattern) is formed by utilizing double patterning or the like in immersion exposure using an ArF light source.
  • line patterns are cut or vias are formed through exposure using an electron beam.
  • an electron beam exposure apparatus provided with a multi-beam optical system that turns on and off a beam using a plurality of blanking apertures can be used (see, for example, Patent Document 1).
  • Patent Document 1 an electron beam exposure apparatus as well as the blanking aperture system.
  • an electron beam apparatus which emits light to a photoelectric element and irradiates an electron beam generated from the photoelectric element to a target
  • An illumination optical system for illuminating the first surface
  • a pattern generator having a plurality of reflecting elements disposed on the first surface, and generating a plurality of light beams by the light from the illumination optical system
  • a projection optical system for projecting the plurality of light beams from the pattern generator onto a photoelectric conversion surface of the photoelectric element;
  • the illumination optical system condenses a first light beam emitted from an illumination pupil along a first direction and a second light beam emitted from the illumination pupil along a second direction different from the first direction.
  • Oblique incident illumination is performed to the first surface, which includes a condensing optical system and is disposed such that the normal is inclined with respect to the optical axis of the illumination optical system;
  • the focusing optical system includes a focusing point adjusting member that makes the focusing position in the optical axis direction of the first light beam different from the focusing position in the optical axis direction of the second light beam.
  • an electron beam apparatus which emits light to a photoelectric element and irradiates an electron beam generated from the photoelectric element to a target
  • An illumination optical system for illuminating the first surface
  • a pattern generator having a plurality of reflecting elements disposed on the first surface, and generating a plurality of light beams by the light from the illumination optical system
  • a projection optical system for projecting the plurality of light beams from the pattern generator onto a photoelectric conversion surface of the photoelectric element
  • the illumination optical system includes a condensing optical system which condenses a first luminous flux reaching a first position on the first surface and a second luminous flux reaching a second position on the first surface, the illumination Oblique illumination of the first surface, which is arranged such that the normal is inclined with respect to the optical axis of the optical system
  • the focusing optical system includes a focusing point adjusting member that makes the focusing position in the optical axis direction of the first light beam different from the focusing
  • an electron beam apparatus which emits light to a photoelectric element and irradiates an electron beam generated from the photoelectric element to a target
  • An illumination optical system for illuminating the first surface;
  • a pattern generator having a plurality of reflecting elements disposed on the first surface, and generating a plurality of light beams by the light from the illumination optical system;
  • a projection optical system for projecting the plurality of light beams from the pattern generator onto a photoelectric conversion surface of the photoelectric element;
  • the illumination optical system condenses a first light beam emitted from an illumination pupil along a first direction and a second light beam emitted from the illumination pupil along a second direction different from the first direction.
  • the focusing optical system includes a focusing point adjusting member that makes the focusing position in the optical axis direction of the first light beam different from the focusing position in the optical axis direction of the second light beam.
  • an electron beam apparatus which emits light to a photoelectric element and irradiates an electron beam generated from the photoelectric element to a target
  • An illumination optical system for illuminating the first surface
  • a pattern generator having a plurality of reflecting elements disposed on the first surface, and generating a plurality of light beams by the light from the illumination optical system
  • a projection optical system for projecting the plurality of light beams from the pattern generator onto a photoelectric conversion surface of the photoelectric element
  • the illumination optical system may be provided with an electron beam apparatus for obliquely incidentally illuminating the first surface arranged such that a normal is inclined with respect to an optical axis of the projection optical system.
  • an illumination optical system for illuminating a surface to be illuminated with light from a light source, A first light beam emitted from the illumination pupil along a first direction to a first position and a second position on the surface to be illuminated, the normal position of which is arranged to be inclined with respect to the optical axis of the illumination optical system; A focusing optical system for focusing the second light flux emitted from the illumination pupil along a second direction different from the first direction;
  • the illumination optical system includes a condensing point adjusting member which makes the condensing position of the first luminous flux different from the condensing position of the second luminous flux in the optical axis direction.
  • an illumination optical system for illuminating a surface to be illuminated with light from a light source, A first light beam which is emitted from the illumination pupil and reaches a first position on the surface to be illuminated which is disposed so that the normal is inclined with respect to the optical axis of the illumination optical system; And a focusing optical system for focusing the second luminous flux reaching the second position on the illuminated surface,
  • the illumination optical system includes a condensing point adjusting member which makes the condensing position of the first luminous flux different from the condensing position of the second luminous flux in the optical axis direction.
  • an illumination optical system for illuminating a surface to be illuminated with light from a light source
  • the first light flux emitted along the first direction from the illumination pupil and the second position different from the first direction are emitted from the illumination pupil to the first position and the second position on the illuminated surface.
  • a focusing optical system for focusing each of the The illumination optical system includes a condensing point adjusting member which makes the condensing position of the first luminous flux different from the condensing position of the second luminous flux in the optical axis direction.
  • an illumination optical system for illuminating a surface to be illuminated with light from a light source
  • a collector that collects a first light beam emitted from an illumination pupil and reaching a first position on the illuminated surface, and a second light beam emitted from the illumination pupil and reaching a second position on the illuminated surface
  • the illumination optical system includes a condensing point adjusting member which makes the condensing position of the first luminous flux different from the condensing position of the second luminous flux in the optical axis direction.
  • an illumination optical system for illuminating a surface to be illuminated with light from a light source
  • An optical integrator having a plurality of wavefront splitting elements disposed in parallel in an optical path of light from the light source and forming a plurality of light source images elongated in a first direction in an illumination pupil;
  • a condensing optical system that condenses light fluxes from the plurality of light source images on the surface to be illuminated
  • An illumination optical system for forming a plurality of rectangular illumination fields elongated in the first direction at intervals in the second direction by forming interference fringes in the second direction orthogonal to the first direction on the surface to be illuminated.
  • the illumination optical system of the fifth aspect, the sixth aspect, the seventh aspect, the eighth aspect or the ninth aspect A pattern generator having a plurality of individually controllable reflective elements; And a projection optical system in which a light receiving surface on which the plurality of reflective elements are disposed and a photoelectric conversion surface of a photoelectric element are optically conjugated.
  • the light receiving surface disposed on the light receiving surface is obliquely incident illuminated by the illumination optical system, and light from the light receiving surface is emitted to the photoelectric element through the projection optical system to generate light from the photoelectric element
  • An electron beam apparatus for irradiating an electron beam onto a target is provided.
  • a device manufacturing method comprising a lithography process, comprising: Forming the line and space pattern on the target; Using the electron beam apparatus of the first aspect, the second aspect, the third aspect, the fourth aspect or the tenth aspect, cutting of a line pattern constituting the line and space pattern
  • a device manufacturing method includes:
  • FIG. 1 schematically shows a configuration of an exposure apparatus according to a first embodiment. It is a perspective view which shows the electron beam optical unit of FIG. 1 in cross section. It is a longitudinal cross section which shows an electron beam optical unit.
  • FIGS. 4A to 4C are diagrams (parts 1 to 3) for describing the configuration of the photoelectric capsule and the procedure for attaching the lid member to the main body of the photoelectric capsule manufacturer in a factory.
  • FIG. 16 is a diagram (part 1) for describing a part of the assembly procedure of the electron beam optical unit; It is a figure (2) for demonstrating a part of assembly procedure of an electron beam optical unit.
  • FIG. 17 is a third diagram illustrating the part of the assembly procedure of the electron beam optical unit; FIG.
  • FIG. 8A is a partly omitted longitudinal sectional view showing a photoelectric device provided in a photoelectric capsule
  • FIG. 8B is a partly omitted plan view showing the photoelectric device. It is the partially omitted top view which shows a lid storage plate.
  • FIG. 5 shows a plurality of pattern projection devices in an optical unit with an electron beam optical unit.
  • FIG. 11A is a view showing the configuration of the light irradiation apparatus as viewed from the + X direction
  • FIG. 11B is a view showing the configuration of the light irradiation apparatus as viewed from the ⁇ Y direction.
  • FIG. 12A is a perspective view showing a light diffraction type light valve
  • FIG. 12B is a side view showing the light diffraction type light valve.
  • FIG. 14A is a view showing the configuration of the electron beam optical system as viewed from the + X direction
  • FIG. 14B is a view showing the configuration of the electron beam optical system as viewed from the ⁇ Y direction.
  • FIGS. 15A to 15C are diagrams for explaining the correction of the reduction ratio in the X-axis direction and the Y-axis direction by the first electrostatic lens. It is a perspective view which shows the external appearance of the 45 electron beam optical system supported by the base plate in the suspended state.
  • FIG. 20A and FIG. 20B are diagrams for explaining the correction of the shape change (rounding of four corners) of the cut pattern caused by the blur caused by the optical system and the resist blur.
  • FIGS. 20A and FIG. 20B are diagrams for explaining the correction of the shape change (rounding of four corners) of the cut pattern caused by the blur caused by the optical system and the resist blur.
  • FIGS. 21A and 21B are diagrams for explaining the correction of distortion common to a plurality of electron beam optical systems. It is a top view showing an example of a pattern generator which has a ribbon row for backup.
  • FIGS. 23A and 23B are diagrams for explaining a ribbon array for correction.
  • FIGS. 24 (A) to 24 (D) are diagrams showing configuration examples of various types of optical pattern forming units.
  • FIG. 25 (A) is an explanatory view showing a method without using an aperture
  • FIG. 25 (B) is an explanatory view showing a method using an aperture. It is a figure showing roughly the composition of the exposure device concerning a 2nd embodiment.
  • FIGS. 28A to 28E are views showing various configuration examples of the aperture integrated photoelectric device.
  • FIG. 29 is a diagram for describing a method of compensating a field curvature which an electron beam optical system has as an aberration. It is a figure which shows an example of the multi-pitch type aperture integrated photoelectric element in which the aperture row
  • 31 (A) to 31 (C) are diagrams showing a procedure for forming a cut pattern for cutting line patterns having different pitches by using the aperture integrated photoelectric device of FIG. FIG.
  • FIG. 32A is a view for explaining an example of the configuration of the separate aperture type photoelectric device
  • FIGS. 32B to 32E are views showing various configuration examples of the aperture plate.
  • FIG. 1 schematically shows a configuration of a projection optical system according to a first type of configuration.
  • FIG. 6 schematically shows a configuration of a projection optical system according to a second type of configuration. It is a figure explaining that a coma aberration generate
  • FIG. 41 is a diagram for explaining a problem that occurs when the surface to be illuminated is not perpendicular to the optical axis in the illumination optical system shown in FIG. 40.
  • FIG. 1 schematically shows the structure of an exposure apparatus 100 according to the first embodiment. Since the exposure apparatus 100 is provided with a plurality of electron beam optical systems as described later, hereinafter, the Z axis is parallel to the optical axis of the electron beam optical system, and the exposure will be described later in a plane perpendicular to the Z axis.
  • the scanning direction in which the wafer W is moved is taken as the Y-axis direction
  • the direction orthogonal to the Z-axis and Y-axis is taken as the X-axis direction
  • the rotational (tilting) directions about the X-axis, Y-axis and Z-axis are respectively ⁇ x, ⁇ y
  • the description will be made as the and ⁇ z directions.
  • the exposure apparatus 100 is supported by the stage chamber 10 installed on the floor surface F of the clean room, the stage system 14 disposed in the exposure chamber 12 inside the stage chamber 10, and the frame 16 on the floor surface F. And an optical system 18 disposed above the stage system 14.
  • the stage chamber 10 is a vacuum chamber capable of evacuating the inside thereof although illustration of both end portions in the X-axis direction is omitted in FIG. 1.
  • the stage chamber 10 includes a bottom wall 10a parallel to the XY plane disposed on the floor surface F, the above-described frame 16 which doubles as an upper wall (ceiling wall) of the stage chamber 10, and a periphery of the bottom wall 10a.
  • a peripheral wall 10b (only a part of the + Y side portion thereof is shown in FIG. 1) for supporting the frame 16 horizontally from below is provided.
  • the frame 16 and the bottom wall 10a are both formed of a plate member having a rectangular shape in a plan view, and the frame 16 is formed with an opening 16a having a circular shape in a plan view in the vicinity of the central portion thereof.
  • the second portion 19b having a small diameter of the casing 19 of the stepped electron beam optical unit 18A with a stepped external appearance of the optical system 18 is inserted into the opening 16a from above, and the first portion 19a having a large diameter of the casing 19 is , Is supported from below on the upper surface of the frame 16 around the opening 16a.
  • a seal member seals between the inner circumferential surface of the opening 16 a and the second portion 19 b of the housing 19.
  • a stage system 14 is disposed on the bottom wall 10 a of the stage chamber 10.
  • the stage system 14 is supported by a platen 22 supported on the bottom wall 10a via a plurality of vibration isolation members 20, and supported by the weight cancellation device 24 on the platen 22 and is predetermined in the X-axis direction and the Y-axis direction.
  • the wafer stage WST is movable with a stroke of, for example, 50 mm, and can be finely moved in the remaining four degrees of freedom (Z-axis, .theta.x, .theta.y and .theta.z directions), and a stage drive system 26 (FIG. In part 1, only part of them is shown (see FIG. 18) and position measurement system 28 (not shown in FIG. 1, refer to FIG. 18) for measuring positional information in the direction of 6 degrees of freedom of wafer stage WST. .
  • Wafer stage WST adsorbs and holds wafer W via an electrostatic chuck (not shown) provided on the upper surface thereof.
  • wafer stage WST is a motor having XZ cross section rectangular frame shaped members, and having YZ cross section rectangular frame shaped yoke and magnet (not shown) on the bottom of the inside (hollow portion) thereof.
  • the 30 movers 30a are integrally fixed, and a stator 30b of a motor 30 formed of a coil unit extending in the Y-axis direction is inserted into the inside (hollow portion) of the mover 30a. Both ends in the longitudinal direction of the stator 30 b are connected to an X stage (not shown) that moves in the X axis direction on the surface plate 22.
  • the X stage has a predetermined stroke in the X-axis direction integrally with the wafer stage WST by an X-stage drive system 32 (see FIG. 18) configured by a single-axis drive mechanism without magnetic flux leakage, for example, a feed screw mechanism using a ball screw.
  • the X stage drive system 32 may be configured by a uniaxial drive mechanism provided with an ultrasonic motor as a drive source. In any case, the influence of the magnetic field fluctuation due to the magnetic flux leakage on the positioning of the electron beam is negligible.
  • the motor 30 can move the mover 30a in the Y-axis direction with a predetermined stroke, for example, 50 mm, relative to the stator 30b, and can finely drive the X-axis direction, the Z-axis direction, the ⁇ x direction, the ⁇ y direction, and the ⁇ z direction Closed magnetic field type and moving magnet type motor.
  • a wafer stage drive system that drives wafer stage WST in the direction of six degrees of freedom by motor 30 is configured.
  • the wafer stage drive system will be referred to as wafer stage drive system 30 using the same reference numerals as motor 30.
  • the X stage drive system 32 and the wafer stage drive system 30 drive the wafer stage WST in the X-axis direction and the Y-axis direction with a predetermined stroke, for example, 50 mm, and the remaining four degrees of freedom (Z-axis, ⁇ x,
  • the above-described stage drive system 26 is finely driven in the ⁇ y and ⁇ z directions).
  • the X stage drive system 32 and the wafer stage drive system 30 are controlled by the main controller 110 (see FIG. 18).
  • a magnetic shield member (not shown) with an inverted U-shaped XZ cross section is provided on both ends of the X stage in the X axis direction (not shown) so as to cover the upper surface of the motor 30 and both side surfaces in the X axis direction. It is constructed between the departments.
  • the magnetic shield member is inserted into the hollow portion of wafer stage WST without interfering with the movement of mover 30a relative to stator 30b.
  • the magnetic shield member covers the upper surface and the side surface of motor 30 over the entire length of the moving stroke of mover 30a and is fixed to the X stage, so that the entire range of movement of wafer stage WST and X stage is Leakage of the magnetic flux to the upper side (the electron beam optical system side described later) can be almost certainly prevented.
  • the weight cancellation device 24 includes a metal bellows type air spring (hereinafter abbreviated as an air spring) 24a whose upper end is connected to the lower surface of the wafer stage WST and a flat plate member connected to the lower end of the air spring 24a. And a base slider 24b.
  • the base slider 24b is provided with a bearing (not shown) for spouting the air inside the air spring 24a to the upper surface of the platen 22, and the bearing surface of the pressurized air ejected from the bearing and the upper surface of the platen 22.
  • the weight cancellation device 24, the wafer stage WST (including the mover 30a), and the own weight of the wafer W are supported by the static pressure (pressure in the gap) between them.
  • compressed air is supplied to the air spring 24 a through a pipe (not shown) connected to the wafer stage WST.
  • the base slider 24b is supported in a non-contact manner on the surface plate 22 via a kind of differential pumping type of static air bearing, and the air ejected toward the surface plate 22 from the bearing portion ) Are prevented from leaking out.
  • a pair of pillars are provided sandwiching air spring 24a in the Y-axis direction, and a plate spring provided at the lower end of the pillar is connected to air spring 24a.
  • the optical system 18 includes the electron beam optical unit 18A held by the frame 16 and the optical unit 18B mounted on the electron beam optical unit 18A.
  • the electron beam optical unit 18A is shown in a perspective view in cross section. Further, FIG. 3 shows a longitudinal sectional view of the electron beam optical unit 18A. As shown in these figures, the electron beam optical unit 18A includes a housing 19 having an upper first portion 19a and a lower second portion 19b.
  • the first portion 19a of the housing 19 has a cylindrical shape with a low height, as apparent from FIG.
  • a first vacuum chamber 34 is formed inside the first portion 19 a.
  • the first vacuum chamber 34 is formed of a first plate 36 consisting of a plate member having a circular shape in plan view constituting an upper wall (ceiling wall), and a plate member having the same diameter as the first plate 36. It is divided from a second plate (hereinafter referred to as a base plate) 38 constituting a bottom wall, a cylindrical side wall portion 40 surrounding the periphery of the first plate 36 and the base plate 38, and the like.
  • a plurality of through holes 36a in the vertical direction circular in plan view are arranged at predetermined intervals in the XY two-dimensional direction.
  • the main body portion 52 of the photo capsule to be described next is inserted from above into these 45 through holes 36a with almost no gap.
  • the photoelectric capsule 50 has a cylindrical shape having an opening 52c at one end surface (lower end surface in FIG. 4A) and a hollow portion 52b inside.
  • the main body 52 is provided with a flange 52a at the other end (upper end in FIG. 4A), and a lid member 64 capable of closing the opening 52c.
  • the hollow portion 52b is a hollow portion having a shape obtained by forming a round hole with a predetermined depth from the lower end surface of the main body portion 52 and further forming a substantially conical recess on the bottom surface of the round hole.
  • the upper surface of the main body 52 including the flange 52a is a square in plan view, and the center of the square coincides with the central axis of the hollow 52b.
  • a photoelectric device 54 is provided on the top of the main body 52 at the center thereof.
  • the photoelectric device 54 is a transparent plate member (for example, quartz glass) forming the uppermost surface of the main body 52 which also serves as a vacuum partition as shown in the longitudinal sectional view of FIG. 56, and a light shielding film (aperture film) 58 made of, for example, chromium deposited on the lower surface of the plate member 56, and an alkaline photoelectric film (photoelectric conversion film) formed on the lower surface side of the plate member 56 and the light shielding film 58).
  • a transparent plate member for example, quartz glass
  • a light shielding film (aperture film) 58 made of, for example, chromium deposited on the lower surface of the plate member 56, and an alkaline photoelectric film (photoelectric conversion film) formed on
  • Alkaline photoelectric conversion layer (alkali photoelectric layer)) 60 A large number of apertures 58 a are formed in the light shielding film 58. Although only a part of the photoelectric element 54 is shown in FIG. 8A, in practice, a large number of apertures 58a are formed in the light shielding film 58 in a predetermined positional relationship (FIG. B) see). The number of apertures 58a may be the same as the number of multi beams described later, or may be more than the number of multi beams.
  • the alkaline photoelectric layer 60 is also disposed inside the aperture 58a, and the plate member 56 and the alkaline photoelectric layer 60 are in contact with each other at the aperture 58a. In the present embodiment, the plate member 56, the light shielding film 58, and the alkaline photoelectric layer 60 are integrally formed, and at least a part of the photoelectric element 54 is formed.
  • the alkali photoelectric layer 60 is a multi-alkali photocathode using two or more types of alkali metals.
  • the multialkali photocathode is a photocathode characterized by high durability, capable of generating electrons with green light having a wavelength of 500 nm band, and high quantum efficiency QE of the photoelectric effect of about 10%.
  • a material having a high conversion efficiency of 10 [mA / W] is used.
  • the electron emission surface of the alkali photoelectric layer 60 is the lower surface in FIG. 8A, that is, the surface on the opposite side to the upper surface of the plate member 56.
  • annular recessed groove with a predetermined depth is formed on the lower end surface of the annular portion of the main body 52 in plan view, and a kind of sealing member is formed in the recessed groove.
  • the O-ring 62 which is a part of the O-ring 62, is attached in a state of being partially accommodated in the recessed groove.
  • the lid member 64 is a plate member having a circular shape in plan view similar to the outer peripheral edge (outline) of the lower end face of the main body 52, and is removed in vacuum as described later. , And closes the open end of the main body 52 (see FIG. 5). That is, since the closed space (hollow portion 52 b) inside the main body 52 closed by the lid member 64 is a vacuum space, the lid member 64 is crimped to the main body 52 by the atmospheric pressure acting on the lid member 64. It is done.
  • a pair of vacuum-compatible actuators 66 are arranged in three directions of the X axis, Y axis and Z axis.
  • a lid storage plate 68 driven by the In the lid storage plate 68 as shown in FIG. 5, the round holes 68a of 45 predetermined depths are formed on the upper surface in an arrangement corresponding to the arrangement of 45 photo capsules 50, and the inside of each round hole 68a A circular through hole 68 b is formed on the bottom surface.
  • the number of round holes 68 a may not be the same as the number of photoelectric capsules 50.
  • the lid member 64 may be supported by the lid storage plate 68 without providing the round hole 68 a.
  • the lid storage plate 68 further includes an optical beam path (electrons) between the round holes 68a and the round holes 68a.
  • a circular opening 68c is formed, which may be called a beam path.
  • the opening 68c may not be provided as long as the lid storage plate 68 can be retracted from the electron beam passage.
  • the base plate 38 is formed with 45 concave portions 38a having a predetermined depth, the centers of which are positioned on the central axes of the main portions 52 of the 45 photo capsules 50, respectively.
  • the recesses 38a have a predetermined depth from the upper surface to the lower surface of the base plate 38, and a through hole 38b functioning as a throttling portion is formed on the inner bottom surface.
  • the through hole 38b is also referred to as a narrowed portion 38b.
  • the throttling portion 38b will be further described later.
  • 45 electron beam optical systems 70 whose optical axes AXe are positioned on the central axes of the main portions 52 of the 45 photoelectric capsules 50 are fixed in a suspended state.
  • the support of the electron beam optical system 70 is not limited to this, and for example, 45 electron beam optical systems 70 are supported by a support member different from the base plate 38, and the support member is the second portion 19 b of the housing 19. You may support it.
  • the electron beam optical system 70 will be described in more detail later.
  • the second portion 19b of the housing 19 has a cylindrical shape with a smaller diameter and a somewhat higher height than the first portion.
  • a second vacuum chamber 72 (see FIGS. 1 and 3) for accommodating 45 electron beam optical systems 70 is formed inside the second portion 19b.
  • the second vacuum chamber 72 includes the above-described base plate 38 forming an upper wall (ceiling wall), and a thin plate-like cooling plate 74 having a circular plan view shape forming a bottom wall.
  • a cylindrical peripheral wall portion 76 having an outer diameter substantially the same as the diameter of the cooling plate 74 and fixed to the lower end surface of the cooling plate 74.
  • the cooling plate 74 has a function of suppressing fogging, which will be described later, in addition to the cooling function.
  • the first vacuum chamber 34 and the second vacuum chamber 72 can evacuate their respective interiors (see open arrows in FIG. 2).
  • a second vacuum pump for evacuating the second vacuum chamber 72 may be provided, or a common vacuum pump may be used to perform the first process.
  • the vacuum chamber 34 and the second vacuum chamber 72 may be evacuated.
  • the degree of vacuum of the first vacuum chamber 34 and the degree of vacuum of the second vacuum chamber 72 may be different.
  • one of the first vacuum chamber 34 and the second vacuum chamber 72 may be an atmospheric pressure space, and the other may be a vacuum space.
  • the throttling portion 38 b can be provided to make the degree of vacuum of the first vacuum chamber 34 different from that of the second vacuum chamber 72, but without providing the throttling portion 38 b or the like,
  • the vacuum chamber 32 and the second vacuum chamber 72 may substantially constitute one vacuum chamber.
  • the optical unit 18B includes a lens barrel (housing) 78 mounted on the electron beam optical unit 18A, and 45 light irradiation devices (optical system and the like housed in the lens barrel 78). Can also be called) 80).
  • the 45 light irradiation devices 80 are disposed in the XY plane in an arrangement corresponding to each of the main portions 52 of the 45 photoelectric capsules 50.
  • the inside of the lens barrel 78 is an atmospheric pressure space.
  • Each of the 45 light irradiators 80 is provided corresponding to 45 photo capsules 50 (photoelectric element 54), and at least one light beam from the light irradiator 80 is alkali through the aperture 58a of the photoelectric element 54.
  • the light is irradiated to a photoelectric layer (hereinafter abbreviated as a photoelectric layer) 60.
  • the number of light irradiation devices 80 and the number of photoelectric capsules 50 may not be equal.
  • each of the 45 light irradiators 80 includes an illumination system 82, a pattern generator 84 that generates patterned light, and a projection optical system 86.
  • the pattern generator 84 may be referred to as a spatial light modulator that spatially modulates and emits the state of amplitude, phase, and polarization of light traveling in a predetermined direction.
  • the pattern generator 84 can generate, for example, an optical pattern composed of light and dark patterns.
  • FIGS. 11A and 11B show an example of the configuration of the light irradiation device 80 together with the main body 52 of the corresponding photoelectric capsule 50.
  • FIG. 11 (A) shows a configuration as viewed from the + X direction
  • FIG. 11 (B) shows a configuration as viewed from the ⁇ Y direction.
  • the illumination system 82 includes a light source unit 82a that generates illumination light (laser light) LB, and one or more X-axes of the illumination light LB.
  • a shaping optical system 82b for shaping the beam into a rectangular beam having a long cross section in the direction.
  • the light source unit 82a is a laser diode 88 that continuously oscillates a visible light as a light source or a laser light of a wavelength near, for example, a wavelength of 365 nm, and an AO deflector (AOD or light deflection element disposed on the light path of the laser light). Called) 90).
  • the AO deflector 90 functions as a switching element, and is used to intermittently emit laser light. That is, the light source unit 82a is a light source unit capable of intermittently emitting a laser beam (laser beam) LB having a wavelength of 365 nm.
  • the duty ratio of light emission of the light source unit 82a can be changed, for example, by controlling the AO polarizer 90.
  • the switching element is not limited to the AO polarizer, and may be an AOM (acousto-optic modulator).
  • the laser diode 88 itself may emit light intermittently.
  • the shaping optical system 82b includes a diffractive optical element (also referred to as DOE) 92, an illuminance distribution adjusting element 94, and a condensing element sequentially disposed on the optical path of a laser beam (hereinafter abbreviated as a beam as appropriate) LB from the light source section 82a.
  • the lens 96 is included.
  • the diffractive optical element 92 When the laser beam from the AO deflector 90 is incident on the diffractive optical element 92, a plurality of the laser beams are long in the X-axis direction at predetermined intervals in the Y-axis direction on the predetermined surface on the exit surface side of the diffractive optical element 92 The in-plane intensity distribution of the laser beam is converted such that the light intensity has a large distribution in the rectangular area (in the present embodiment, an elongated slit-like area).
  • the diffractive optical element 92 receives a plurality of rectangular beams (slit-like beams) having a rectangular cross section long in the X-axis direction aligned at predetermined intervals in the Y-axis direction by the incidence of the laser beam from the AO deflector 90.
  • a number of slit-shaped beams are generated according to the configuration of the pattern generator 84.
  • the element for converting the in-plane intensity distribution of the laser beam is not limited to the diffractive optical element, and may be a refractive optical element or a reflective optical element, or may be a spatial light modulator.
  • the illuminance distribution adjustment element 94 can adjust the illuminance separately for each divided area in each divided area obtained by dividing the light receiving surface of the pattern generator 84 into a plurality of parts when the pattern generator 84 is irradiated with a plurality of beams. It is In this embodiment, as the illuminance distribution adjusting element 94, a crystal having a non-linear optical effect in which the refractive index changes according to the applied voltage, for example, lithium tantalate (lithium tantalate (abbreviation: LT) single crystal) An element configured by arranging in parallel in a plane parallel to each other and arranging polarizers on the incident side and the outgoing side is used. In this embodiment, as schematically shown in the circle of FIG.
  • lithium tantalite crystals 94a are formed in a matrix of 2 rows and 12 columns in the XY plane at 1 mm pitch, for example.
  • the arranged illuminance distribution adjustment element 94 is used.
  • symbol 94b shows an electrode.
  • the polarizer on the output side passes only a predetermined polarization component, and thus changes the polarization state of light incident on the crystal through the polarizer on the incident side, for example, linearly polarized light By changing it to circularly polarized light, it is possible to change the intensity of the light emitted from the output side polarizer.
  • the change in polarization state can be made variable by controlling the voltage applied to the crystal. Therefore, by controlling the voltage applied to each crystal, it is possible to adjust the illuminance for each region corresponding to each crystal (a region surrounded by a two-dot chain line in FIG. 13) (see FIG. 11A). ).
  • the illuminance distribution adjusting element 94 is not limited to lithium tantalate, and can be configured using other light intensity modulation crystal (electro-optical element) such as lithium niobate (lithium niobate (abbr .: LN) single crystal). .
  • the illuminance distribution The adjusting element 94 may not be provided.
  • a spatial light modulator that spatially modulates the amplitude, phase, and polarization state of light to be emitted may be used as the illuminance distribution adjustment element 94, and a transmissive liquid crystal element, a reflective liquid crystal element, or the like may be used as an example.
  • a mirror 98 for bending an optical path is disposed on the light emission side below the condenser lens 96.
  • the condenser lens 96 condenses the plurality of cross-sectional rectangular (slit-like) beams generated by the diffractive optical element 92 in the Y-axis direction and irradiates the mirror 98.
  • the condensing lens 96 for example, a cylindrical lens long in the X-axis direction can be used.
  • the condenser lens 96 may be composed of a plurality of lenses.
  • a reflective optical member such as a focusing mirror or a diffractive optical element may be used.
  • the mirror 98 is not limited to a plane mirror, and may have a shape having a curvature. If the mirror 98 has a curvature (having a finite focal length), the function of the condenser lens 96 can also be used.
  • the mirror 98 is disposed at a predetermined angle with respect to the XY plane, and reflects a plurality of irradiated slit-like beams in the upper left direction in FIG.
  • the pattern generator 84 is disposed on the reflected light path of the plurality of slit-like beams reflected by the mirror 98. More specifically, the pattern generator 84 is disposed on the ⁇ Z side of the circuit board 102 disposed between the condenser lens 96 and the mirror 98 in the Z-axis direction.
  • the circuit board 102 is formed with an opening 102 a which becomes an optical path of a plurality of slit-like beams from the condenser lens 96 to the mirror 98.
  • the pattern generator 84 is configured by a light diffraction type light valve (GLV (registered trademark)) which is a kind of programmable spatial light modulator.
  • the light diffraction type light valve GLV is a minute structure of silicon nitride film called “ribbon” on a silicon substrate (chip) 84 a (hereinafter referred to as “ribbon”).
  • the space light modulator is formed by several thousands of scales).
  • the driving principle of GLV is as follows.
  • the GLV By electrically controlling the deflection of the ribbon 84b, the GLV functions as a programmable diffraction grating, and has high resolution, high speed (responsiveness 250 kHz to 1 MHz), high accuracy, dimming, modulation, and laser light Enable switching. GLVs are classified as micro-electro-mechanical systems (MEMS).
  • the ribbon 84 b is made of an amorphous silicon nitride film (Si 3 N 4 ) which is a kind of high temperature ceramic having strong characteristics in hardness, durability, and chemical stability. Each ribbon has a width of 2 to 4 ⁇ m and a length of 100 to 300 ⁇ m.
  • the ribbon 84b is covered with an aluminum thin film, and has the function of both a reflector and an electrode.
  • the ribbon is stretched across the common electrode 84c, and when a control voltage is supplied to the ribbon 84b from a driver (not shown in FIGS. 12A and 12B), the ribbon is bent toward the substrate 84a by static electricity. .
  • the control voltage is lost, the ribbon 84b returns to its original state due to the high tension inherent to the silicon nitride film. That is, the ribbon 84b is a kind of movable reflective element.
  • GLV GLV
  • an active ribbon whose position changes with the application of voltage
  • a bias ribbon falling to the ground is alternately arranged with a universal position
  • a type in which all are active ribbons is used in the form.
  • a pattern made of GLV on the -Z side surface of the circuit board 102 shown in FIG. A generator 84 is attached.
  • the circuit board 102 is provided with a CMOS driver (not shown) for supplying a control voltage to the ribbon 84 b.
  • CMOS driver not shown
  • a pattern generator 84 including a CMOS driver is referred to.
  • the pattern generator 84 used in the present embodiment has a ribbon row 85 having, for example, 6000 ribbons 84b, the Y axis with the longitudinal direction (the direction in which the ribbons 84b are aligned) as the X axis direction. For example, 12 rows are formed on the silicon substrate at predetermined intervals in the direction.
  • the ribbons 84b of each ribbon row 85 are stretched on the common electrode.
  • each ribbon 84 b is driven mainly by switching (on / off) of the laser light by applying and releasing the constant level voltage.
  • the applied voltage may be adjusted, for example, when the intensity of at least a part of the plurality of beams from the pattern generator 84 needs to be adjusted as described later. Fine-tuned. For example, when light of the same intensity is incident on each ribbon, a plurality of light beams having different intensities can be generated from pattern generator 84.
  • twelve slit-like beams are generated by the diffractive optical element 92, and the twelve beams form the ribbon array 85 via the illuminance distribution adjustment element 94 a, the condenser lens 96, and the mirror 98.
  • a slit-shaped beam LB long in the X-axis direction is irradiated at the center.
  • the irradiation area of the beam LB to each ribbon 84b is a square area.
  • the irradiation area of the beam LB to each ribbon 84b may not be a square area. It may be a rectangular area long in the X axis direction or long in the Y axis direction.
  • the irradiation area (illumination area of the illumination system 82) of the 12 beams on the light receiving surface of the pattern generator 84 has a length in the X axis direction of S mm and a length in the Y axis direction of T mm. It can be said that it is a rectangular area.
  • 72000 apertures 58 a are formed in the light shielding film 58 of the photoelectric element 54 of the photoelectric capsule 50 so that 72000 beams generated by the pattern generator 84 can be individually irradiated. There is.
  • the number of apertures 58a need not be the same as, for example, the number of beams that can be irradiated by the pattern generator 84.
  • a photoelectric element 54 includes apertures 58a to which 72000 beams (laser beams) correspond.
  • the number of movable elements (ribbons 84 b) included in the pattern generator 84 may be different from the number of beams generated by the pattern generator 84. For example, using a type in which an active ribbon whose position is changed by application of a voltage and a bias ribbon which is dropped to the ground and which has a universal position are alternately arranged, one by a plurality of (two) movable elements (ribbons) The beam switching may be performed. Further, the number of pattern generators 84 and the number of photoelectric capsules 50 may not be equal.
  • the projection optical system 86 has an objective lens including lenses 86a and 86b sequentially disposed on the optical path of the light beam from the pattern generator 84, as shown in FIGS. 11 (A) and 11 (B).
  • a filter 86c is disposed between the lens 86a and the lens 86b.
  • the projection magnification of the projection optical system 86 is, for example, about 1 ⁇ 4.
  • the aperture 58a is assumed to be rectangular, but may be square, or may be another shape such as a polygon or an ellipse.
  • each of the lenses 86a and 86b may be configured of a plurality of lenses.
  • the projection optical system is not limited to the refractive optical system, and may be a reflective optical system or a catadioptric optical system.
  • the projection optical system 86 projects the light from the pattern generator 84 onto the photoelectric element 54 so that light beams transmitted through at least one of the plurality of, here, 72000 apertures 58 a are transmitted to the photoelectric layer 60. Irradiated. That is, the turned-on beam from the pattern generator 84 is irradiated to the photoelectric layer 60 through the corresponding aperture 58a, and the turned-off beam is not irradiated to the corresponding aperture 58a and the photoelectric layer 60.
  • the projection optical system 86 may also be referred to as an imaging optical system. it can.
  • the projection optical system 86 is provided with an optical characteristic adjustment device 87 capable of adjusting the optical characteristic of the projection optical system 86.
  • the optical characteristic adjustment device 87 can change at least the projection magnification (magnification) in the X-axis direction by moving some of the optical elements constituting the projection optical system 86, for example, the lens 86a.
  • the optical characteristic adjustment device 87 for example, a device for changing the air pressure in the hermetic space formed between the plurality of lenses constituting the projection optical system 86 may be used.
  • the optical characteristic adjustment device 87 a device for deforming an optical member constituting the projection optical system 86 or a device for giving a heat distribution to an optical member constituting the projection optical system 86 may be used. Although it is shown in FIG. 10 that the optical characteristic adjustment device 87 is juxtaposed to only one light irradiation device 80 in the figure, in fact, all of the 45 light irradiation devices 80 have optical characteristics. An adjusting device 87 is also provided. The 45 optical characteristic adjustment devices 87 are controlled by the control unit 11 based on the instruction of the main control device 110 (see FIG. 18).
  • an intensity modulation element capable of changing the intensity of at least one of a plurality of beams generated by the pattern generator 84 and irradiated to the photoelectric layer 60 may be provided inside the projection optical system 86.
  • the changing of the intensities of the plurality of beams applied to the photoelectric layer 60 includes nulling the intensity of some of the plurality of beams.
  • the projection optical system 86 may include a phase modulation element, a polarization modulation element, or the like capable of changing the phase or polarization of at least one of the plurality of beams irradiated to the photoelectric layer 60.
  • the optical axis AXi of the optical system of the illumination system 82 and the optical axis of the projection optical system 86 are both parallel to the Z axis, but deviated (offset) by a predetermined distance in the Y axis direction.
  • the optical axis AXi of the optical system of the illumination system 82 may not be parallel to the optical axis AXo of the projection optical system.
  • FIG. 14 (A) shows a configuration as viewed from the + X direction
  • FIG. 14 (B) shows a configuration as viewed from the ⁇ Y direction
  • the electron beam optical system 70 includes an objective lens consisting of a lens barrel 104 and a pair of electromagnetic lenses 70a and 70b held by the lens barrel 104, and an electrostatic lens And a multipole 70c.
  • the objective lens of the electron beam optical system 70 and the electrostatic multipole 70 c irradiate a plurality of beams LB to the photoelectric element 54 to emit a beam of electrons (electron beams EB) emitted by photoelectric conversion of the photoelectric element 54. It is arranged on the street.
  • the pair of electromagnetic lenses 70a and 70b are disposed in the vicinity of the upper end and the lower end in the lens barrel 104, respectively, and they are separated in the vertical direction.
  • An electrostatic multipole 70c is disposed between the pair of electromagnetic lenses 70a and 70b.
  • the electrostatic multipole 70c is disposed in the beam waist portion on the beam path of the electron beam EB focused by the objective lens. For this reason, the plurality of beams EB passing through the electrostatic multipole 70c may repel each other by the coulomb force acting between them, and the magnification may change.
  • An electrostatic multipole 70 c having a second electrostatic lens 70 c 2 is provided inside the electron beam optical system 70.
  • the first electrostatic lens 70c 1 is intended to correct a change in magnification caused by the Coulomb effect caused by a change in the total amount of current, and is shown in FIG. Such biased magnification changes due to local Coulomb effects are not to be corrected.
  • Figure 15 assumes adoption of the pattern generation rule magnification change as shown in (C) is in no utmost, the Coulomb effect occurring thereon is corrected by using the first electrostatic lens 70c 1.
  • the second electrostatic lens 70c 2 corrects (bright pixel among the optical pattern, i.e. the projection position deviation of the cut pattern to be described later) irradiation position shift of the beam caused by various vibrations or the like in a batch.
  • the second electrostatic lens 70c 2 is deflection control of the beam for performing the following control for the wafer W of the beam during exposure, i.e., it is also used for the irradiation position control of the beam.
  • deflection control of the electron beam is possible instead of the electrostatic multipole 70c. It is also possible to use an electrostatic deflection lens consisting of an electrostatic lens.
  • the reduction magnification of the electron beam optical system 70 is, for example, 1/50 in design without performing magnification correction.
  • Other scaling factors such as 1/30 and 1/20 may be used.
  • FIG. 16 is a perspective view showing the appearance of the 45 electron beam optical system 70 supported in a suspended state on the base plate 38.
  • An exit 104a of the electron beam is formed at the exit end of the lens barrel 104 as shown in FIGS. 14A and 14B, and the backscattered electron detection device 106 is formed below the exit 104a. Is arranged.
  • the backscattered electron detection device 106 is disposed inside a circular (or rectangular) opening 74 a formed in the cooling plate 74 so as to face the above-described outlet 104 a. More specifically, the optical axis AXe of the electron beam optical system 70 (which coincides with the central axis of the above-mentioned photo capsule 50 and the optical axis AXo of the projection optical system 86 (see FIG.
  • each of the two pairs of backscattered electron detectors 106 is constituted by, for example, a semiconductor detector, and detects a reflected component generated from a detection target mark such as an alignment mark or a reference mark on a wafer.
  • the detection signal corresponding to the detected backscattered electrons is sent to the signal processing device 108 (see FIG. 18).
  • the signal processing unit 108 amplifies the detection signals of the plurality of backscattered electron detection units 106 by an amplifier (not shown) and performs signal processing, and sends the processing result to the main control unit 110 (see FIG. 18).
  • the backscattered electron detection device 106 may or may not be provided only on a part (at least one) of the 45 electron beam optical systems 70.
  • the backscattered electron detectors 106 x 1 , 106 x 2 , 106 y 1 , 106 y 2 may be fixed to the lens barrel 104 or may be attached to the cooling plate 74.
  • the base plate 38 is formed with the above-described diaphragm 38b on the optical axis AXe.
  • the throttling portion 38 b is formed of a rectangular hole elongated in the X-axis direction and formed on the inner bottom surface of the recess 38 a having a circular (or rectangular) shape in plan view and formed at a predetermined depth on the upper surface of the base plate 38.
  • the center of the arrangement region of the large number of apertures 58a provided on the upper side of the photoelectric layer 60 (here, coincides with the central axis of the main body 52 of the photoelectric capsule 50) substantially .
  • the diaphragm 38 b is formed on the base plate 38 so as to individually face the optical axis AXe of the electron beam optical system 70 of 45 as shown in FIG.
  • an extraction electrode 112 for accelerating electrons emitted from the photoelectric layer 60 is disposed between the base plate 38 and the photoelectric element 54.
  • the extraction electrode 112 can be provided, for example, around the circular opening 68c of the lid storage plate 68.
  • the extraction electrode 112 may be provided on a member other than the lid storage plate 68.
  • the lens barrel 78, the first portion 19a of the housing 19, the second portion 19b, and the stage chamber 10 are provided with an opening / closing unit for maintenance.
  • the lid member 64 is moved upward to close the opening 52c, as indicated by the upward white arrow in FIG. 4A.
  • the lid member 64 is brought into contact with the main portion 52 of the photoelectric capsule 50.
  • an upward force (pretension) is applied to the lid member 64 using a spring or other biasing member 122 in the vacuum chamber 120.
  • the O-ring 62 provided on the lower end surface of the main body 52 is completely crushed by the action of pressurization.
  • FIG. 4C shows a state in which this pressurization has been released.
  • the main body 52 and the lid member 64 are integrated to form the photo capsule 50 (the photo capsule 50 is shielded at atmospheric pressure).
  • the plurality of (at least 45) photoelectric capsules 50 are transported to the factory of the exposure apparatus manufacturer while maintaining the state of FIG. 4C.
  • annular recessed groove may be formed on the surface of the lid member 64 facing the main body 52, and the O-ring 62 may be partially embedded in the recessed groove.
  • the sealing member such as the O-ring 62 may not be provided as long as the vacuum state of the space inside the photoelectric capsule can be maintained even in the air space.
  • the vacuum compatible actuator 66 makes the lid member 64 partially inside the round hole 68a of a predetermined depth 45 of the lid storage plate 68, as shown in FIG.
  • the lid storage plate 68 is driven upward to a position where it enters.
  • evacuation of the inside of the first portion 19a and the inside of the second portion 19b of the housing 19 is performed in parallel (see FIG. 2). Also, in parallel with this, vacuuming of the inside of the stage chamber 10 is performed.
  • the lid member 64 is separated from the main body 52 by its own weight as shown in FIG. Completely housed inside the 68a.
  • the photoelectric elements 54 included in the plurality of photoelectric capsules 50 are the first vacuum chamber 34 and the outside thereof (outside of the housing 19). It functions as a partition (vacuum partition) which separates from space.
  • the outside of the first vacuum chamber 34 is at atmospheric pressure, or at a pressure slightly positive than atmospheric pressure.
  • the inside of the second portion 19b of the housing 19 may be evacuated until the high vacuum state at the same level as the first portion 19a is obtained, but the degree of vacuum is lower than that of the first portion 19a (pressure is high).
  • the vacuum may be performed up to the level of medium vacuum. In the present embodiment, this is possible because the inside of the first portion 19a and the inside of the second portion 19b are substantially separated by the narrowed portion 38b.
  • the inside of the second portion 19 a becomes the second vacuum chamber 72.
  • the inside of the second portion 19 b is evacuated to a medium vacuum state, the time required for the evacuation can be shortened.
  • the inside of the stage chamber 10 is evacuated at the same level as the inside of the second portion 19b.
  • the lid accommodating plate 68 is driven in the XY plane (and the Z-axis direction) by the vacuum compatible actuator 66, and 45 circular openings 68c formed in the lid accommodating plate 68 are It is positioned on the optical axis AXe of 45 electron beam optical systems 70, respectively.
  • FIG. 3 shows a state where the circular opening 68c is positioned on the optical axis AXe in this manner. Thereafter, necessary adjustments are made, and the assembly of the electron beam optical unit 18A is completed.
  • an optical unit 18B assembled separately is mounted on the assembled electron beam optical unit 18A (first plate 36).
  • the optical unit 18B is arranged such that each of the 45 light irradiation devices 80 inside the lens barrel 78 corresponds to each of the 45 photoelectric elements 54, that is, the optical axis AXo of the projection optical system 86 Are substantially aligned with the optical axis AXe of the electron beam optical system 70.
  • the necessary adjustment of each part mentioned above includes adjustment for achieving optical accuracy for various optical systems, adjustment for achieving mechanical accuracy for various mechanical systems, and electrical accuracy for various electric systems. Adjustments to achieve are included.
  • the length S mm in the X axis direction and the Y axis direction on the light receiving surface of the pattern generator 84 at the time of exposure is irradiated inside a rectangular area of length T mm, and the light from the pattern generator 84 is irradiated to the photoelectric element 54 by the projection optical system 86 having a reduction ratio of 1 ⁇ 4 by this irradiation, and the light is generated by this irradiation.
  • the electron beam is irradiated onto a rectangular area (exposure field) on the image plane (wafer surface aligned with the image plane) through an electron beam optical system 70 having a reduction ratio of 1/50.
  • the optical system of the exposure apparatus 100 of the present embodiment is a multi-column electron beam optical system having 45 reduction optical systems with a reduction ratio of 1/200.
  • a 300 mm wafer having a diameter of 300 mm is to be exposed, and 45 electron beam optical systems 70 are disposed to face the wafer, so the arrangement interval of the optical axes AXe of the electron beam optical system 70 is an example.
  • the exposure area handled by one electron beam optical system 70 is a rectangular area of 43 mm ⁇ 43 mm at maximum, so as described above, the movement stroke of wafer stage WST in the X-axis direction and Y-axis direction is 50 mm is enough.
  • the number of electron optical systems 70 is not limited to 45, and can be determined based on the diameter of the wafer, the stroke of the wafer stage WST, and the like.
  • FIG. 18 is a block diagram showing the input / output relationship of the main controller 110 that mainly configures the control system of the exposure apparatus 100.
  • Main controller 110 centrally controls components of exposure apparatus 100 including a microcomputer and the like shown in FIG.
  • the light irradiation device 80 connected to the control unit 11 is a laser diode 88 controlled by the control unit 11 based on an instruction from the main control unit 110, an AO deflector 90, a diffractive optical element 92, and An illumination distribution adjustment element 94 is included.
  • the electron beam optical system 70 connected to the control unit 11 is a pair of electromagnetic lenses 70 a and 70 b and electrostatic multipoles 70 c controlled by the control unit 11 based on an instruction from the main control device 110 (first The electrostatic lens 70 c 1 and the second electrostatic lens 70 c 2 ) are included.
  • reference numeral 500 indicates an exposure unit configured to include the multi-beam optical system 200 described above, the control unit 11, and the signal processing device 108. In the exposure apparatus 100, an exposure unit 500 is provided.
  • the exposure apparatus 100 adopts a rectangular (rectangular) exposure field instead of a square for the following reason.
  • FIG. 19 a square field SF and a rectangular field RF are illustrated in a circle indicating the effective area (aberration effective area) of the diameter D of the electron beam optical system.
  • the square field SF is preferable if it is intended to maximize the effective area of the electron beam optical system.
  • the field width is lost by about 30% (1 / ⁇ 2).
  • the effective area is approximately the field width. This is a great advantage for multi-columns.
  • there is a merit that mark detection sensitivity at the time of detecting an alignment mark is improved.
  • the rectangular field has a higher current density than the square field, since the total amount of electrons irradiated in the field is the same, so even if the mark is placed in a smaller area on the wafer It can detect with sufficient detection sensitivity. Also, rectangular fields are easier to manage as compared to square fields.
  • the exposure fields of both the square field SF and the rectangular field RF are set to include the optical axis AXe of the electron beam optical system.
  • the present invention is not limited to this, and the exposure field may be set within the aberration effective area so as not to include the optical axis AXe.
  • the exposure field may be set to a shape other than a rectangle (including a square), for example, an arc.
  • the illuminance unevenness in the exposure field is controlled by the main controller 110 using the illuminance distribution adjustment element 94 at the time of exposure to be described later to perform variable control of the polarization state for each crystal by controlling the applied voltage.
  • the light intensity (illuminance) for each corresponding area area on the light receiving surface of the pattern generator 84 corresponding to each crystal
  • the in-plane on the electron emission surface of the photoelectric layer 60 is consequently obtained.
  • the illuminance distribution and the corresponding illuminance distribution in the exposure field RF on the wafer surface are adjusted. That is, the intensities of the plurality of electron beams irradiated to the exposure field RF are properly adjusted.
  • the main controller 110 can generate halftones by the pattern generator 84 itself, and thus the photoelectric layer 60 is irradiated. Adjustment of the intensity distribution of the light beam on the electron emission surface of the photoelectric layer 60 and the corresponding distribution of the intensity distribution in the exposure field RF on the wafer surface, ie, dose control. It can also be done.
  • the main control device 110 may adjust the in-plane illuminance distribution on the electron emission surface of the photoelectric layer 60 by using the illuminance distribution adjusting element 94 and the pattern generator 84 in combination.
  • the intensities of the plurality of electron beams generated from the electron emission surface of the photoelectric layer 60 by photoelectric conversion is performed so that the amount of current
  • the adjustment of the beam intensity may be performed in the illumination system 82, may be performed by the pattern generator 84, or may be performed in the projection optical system 86.
  • the beam intensity may be adjusted.
  • the resist layer formed on the wafer is not affected only by the in-plane illuminance distribution on the electron emission surface of the photoelectric layer 60, and other factors such as forward scattering, back scattering, or fogging of electrons And so on.
  • forward scattering refers to a phenomenon in which electrons incident on the inside of the resist layer on the wafer surface are scattered in the resist layer before reaching the wafer surface
  • back scattering refers to the wafer via the resist layer It means that the electrons reaching the surface are scattered at or inside the wafer surface, re-incident in the resist layer, and scattered around.
  • “fogging” refers to a phenomenon in which reflected electrons from the surface of the resist layer are re-reflected on the bottom surface of the cooling plate 74, for example, and a dose is applied to the periphery.
  • exposure apparatus 100 adopts different correction methods for forward scattering and backscattering and fogging. ing.
  • the main controller 110 allows the pattern generator 84 (and / or the illuminance distribution adjusting element via the control unit 11 in anticipation of the influence of the forward scattered component). Adjust the in-plane illuminance distribution using 94).
  • the main controller 110 controls the illuminance distribution adjusting element 94 via the control unit 11. Use it to adjust the in-plane illuminance distribution at a certain spatial frequency.
  • the exposure apparatus 100 is used, for example, in complementary lithography.
  • a wafer on which an L / S pattern is formed is used as an exposure target by using double patterning or the like in immersion exposure using an ArF light source, and is used for forming a cut pattern for cutting the line pattern.
  • Be In the exposure apparatus 100 it is possible to form a cut pattern corresponding to each of 72000 apertures 58a formed in the light shielding film 58 of the photoelectric element 54.
  • the flow of processing on a wafer in the present embodiment is as follows.
  • the wafer W before exposure to which the electron beam resist has been applied is placed on the wafer stage WST in the stage chamber 10 and is attracted by the electrostatic chuck.
  • each electron beam optical system 70 For at least one alignment mark formed on a scribe line (street line) corresponding to each of, for example, 45 shot areas formed on wafer W on wafer stage WST, each electron beam optical system 70 The electron beam is irradiated, and the backscattered electrons from at least one alignment mark are detected by at least one of backscattered electron detectors 106 x 1 , 106 x 2 , 106 y 1 , 106 y 2 , and all points alignment measurement of wafer W 1 is performed.
  • the plurality of shot areas on the wafer W 1 exposure using a 45 exposure unit 500 (multi-beam optical system 200) is started.
  • the number of exposure units 500 and the number of shot areas are the same, but may be different. For example, the number of exposure units 500 may be smaller than the number of shot areas.
  • the exposure using the ribbon row A is started on a continuous 6000-pixel region of a certain row (referred to as a K-th row) aligned in the X-axis direction on the wafer.
  • a K-th row a continuous 6000-pixel region of a certain row aligned in the X-axis direction on the wafer.
  • the beam reflected by the ribbon row A is at the home position.
  • the exposure to the same 6000 pixel region is continued while deflecting the beam in the + Y direction (or -Y direction) by making the scan of the wafer W in the + Y direction (or -Y direction) from the start of exposure follow.
  • wafer stage WST advances at a velocity V [nm / s], for example Ta x V [nm].
  • V [nm / s] for example Ta x V [nm].
  • Ta ⁇ V 96 [nm].
  • the beam is returned to the home position while the wafer stage WST scans at 24 nm in the + Y direction at a velocity V. At this time, the beam is turned off so that the resist on the wafer is not actually exposed. The turning off of the beam is performed using an AO deflector 90.
  • the continuous 6000 pixel area on the (K + 12) th row has the same position as the 6000 pixel area on the Kth row at the start of exposure. It is in.
  • the continuous (6000 K) pixel region on the (K + 12) th row is exposed while deflecting the beam to the wafer stage WST.
  • the exposure apparatus 100 is used for complementary lithography and is used for forming a cut pattern for an L / S pattern formed on the wafer W, for example, with the X-axis direction as the periodic direction.
  • a beam reflected by an arbitrary ribbon 84b can be turned on to form a cut pattern.
  • 72000 beams may or may not be simultaneously turned on.
  • main scanning drive 110 controls stage drive system 26 based on the measurement values of position measurement system 28 during scanning exposure to wafer W based on the above-described exposure sequence.
  • the light irradiation device 80 and the electron beam optical system 70 are controlled via the control unit 11 of each exposure unit 500. At this time, based on an instruction from the main control unit 110, the control unit 11 performs the above-described dose control as necessary.
  • the dose control described above is dose control performed by controlling the illuminance distribution adjusting element 94 or the pattern generator 84, or the illuminance distribution adjusting element 94 and the pattern generator 84, it can be said that the dose control is dynamic. .
  • the dose control that can be adopted by the exposure apparatus 100 is not limited to this, and the following dose control can also be adopted.
  • the cut pattern (resist pattern) CP that should be originally square (or rectangular) on the wafer is, for example, 4 due to optical system-induced blur (blur) and / or resist blur.
  • a corner may be rounded to look like a cut pattern CP '.
  • the light beam is photoelectrically transferred through a non-rectangular aperture 58a 'in which auxiliary patterns 58c are provided at four corners of the aperture 58a formed in the light shielding film 58.
  • an electron beam generated by photoelectric conversion is irradiated onto the wafer through the electron beam optical system 70 to form an irradiation area of the electron beam having a shape different from that of the non-rectangular aperture 58a 'on the wafer.
  • the shape of the irradiation area of the electron beam and the shape of the cut pattern CP to be formed on the wafer may be the same or different.
  • the shape of the aperture 58a ' is set so that the shape of the electron beam irradiation area is substantially the same as the shape of the desired cut pattern CP (for example, rectangular or square). You should decide.
  • the auxiliary pattern 58c need not be provided at all four corners of the rectangular aperture 58a, and the auxiliary pattern 58c may be provided at at least a part of the four corners of the aperture 58a.
  • the auxiliary pattern 58c may be provided at all four corners of the rectangular aperture 58a only in a part of the plurality of apertures 58a 'formed in the light shielding film 58.
  • some of the plurality of apertures formed in the light shielding film 58 may be apertures 58a ', and the remaining may be apertures 58a.
  • the shape of each aperture is determined so as to suppress rounding of the corner of the irradiation area on the wafer (target).
  • the influence of the forward scattering component can also be reduced by the aperture shape.
  • the shape of the aperture 58a ′ may be the same as the shape of the irradiation region of the electron beam.
  • the exposure apparatus 100 has a plurality of electron beam optical systems 70, for example 45, but the 45 electron beam optical systems 70 are manufactured through the same manufacturing process so as to satisfy the same specifications.
  • inherent distortion disortion aberration
  • the distortion common to the plurality of electron beam optical systems 70 cancels the distortion, as schematically shown in FIG. 21B, in the arrangement of the apertures 58a on the light shielding film 58 located on the photoelectric layer 60.
  • the correction may be made in such an arrangement as to reduce or reduce.
  • the circle in FIG. 21A indicates the aberration effective area of the electron beam optical system 70.
  • each aperture 58a is shown not as a rectangle but as a parallelogram etc. for clarity in FIG. 21 (B), in fact, the aperture 58a on the light shielding film 58 is formed as a rectangle or a square. Be done.
  • This example shows a case where barrel distortion inherent to the electron beam optical system 70 is canceled or reduced by arranging a plurality of apertures 58a on the photoelectric layer 60 along the pincushion distortion shape.
  • the distortion of the electron beam optical system 70 is not limited to the barrel distortion, and, for example, when the distortion of the electron beam optical system is pincushion distortion, a plurality of distortions may be canceled or reduced.
  • the apertures 58a may be arranged in a barrel distortion shape. Further, the positions of the plurality of light beams from the projection optical system 86 may or may not be adjusted according to the arrangement of the respective apertures 58a.
  • the exposure apparatus 100 includes the exposure unit 500 configured to include the multi-beam optical system 200, the control unit 11, and the signal processing device 108 (see FIG. 18).
  • the multi-beam optical system 200 includes a light irradiation device 80 and an electron beam optical system 70.
  • the light irradiation device 80 includes a pattern generator 84 capable of providing a plurality of individually controllable light beams, an illumination system 82 for irradiating the pattern generator 84 with illumination light, and photoelectric elements of the plurality of light beams from the pattern generator 84
  • the electron beam optical system 70 irradiates a plurality of light beams to the photoelectric element 54 and emits electrons emitted from the photoelectric element 54 to the wafer W as a plurality of electron beams. Irradiate. Therefore, according to the exposure apparatus 100, since there is no blanking aperture, the source of generation of complex distortion due to charge-up and magnetization is fundamentally eliminated and waste electrons (reflected electrons) not contributing to the exposure of the target become zero. So it becomes possible to eliminate long-term instability factors.
  • main controller 110 performs scanning (movement) of wafer stage WST holding wafer W in the Y-axis direction via stage drive system 26. Control.
  • the main control unit 110 passes n (for example, 72000) apertures 58 a of the photoelectric element 54 for each of the m (for example, 45) multi-beam optical systems 200 of the exposure unit 500.
  • the irradiation state (on state and off state) of the n beams is changed for each aperture 58a, and the illuminance distribution adjustment element 94 is used for each divided region corresponding to each crystal, or the pattern generator 84 is used. And adjust the intensity of the light beam for each beam.
  • the first electrostatic lens 70c 1 of the electrostatic multipole 70c caused by changes in the total current amount, reduction in the X-axis direction and the Y-axis direction due to the Coulomb effect magnification (changes in) Correct, fast, and individually.
  • the second electrostatic lens 70c 2 correction (light pixels of the optical pattern, i.e. the projection position deviation of the cut pattern to be described later) irradiation position shift of the beam caused by various vibrations or the like in a batch Do.
  • a desired line of a fine line-and-space pattern in which the X-axis direction formed in advance in each of, for example, 45 shot areas on the wafer by double patterning using an ArF immersion exposure apparatus, for example. It becomes possible to form a cut pattern at a desired position on the top, and high precision and high throughput exposure is possible.
  • any of the plurality of apertures 58 a in each multi-beam optical system 200 Even when the beam passing through the aperture 58a is in the on state, in other words, regardless of the combination of the beams in the on state, X formed in advance on each of, for example, 45 shot areas on the wafer It is possible to form a cut pattern at a desired X position on a desired line of a fine line and space pattern in which the axial direction is a periodic direction.
  • the transportation of the photoelectric element 54 is easy, and the electron beam optical unit 18A of the photoelectric element 54 to the housing 19 It is easy to assemble.
  • the lid member 64 of each of the plurality of photoelectric capsules 50 is separated from the main body 52 by its own weight simply by evacuating the inside of the first vacuum chamber 34, and simultaneously by the lid storage plate 68 driven by the vacuum compatible actuator 66. Since it can be received and stored in the round hole 68a, the lid members 64 of the plurality of photoelectric capsules 50 can be removed in a short time.
  • a plurality of lid members 64 separately stored in the plurality of round holes 68a of the lid storage plate 68 simultaneously Only when the inside of the first vacuum chamber 34 is open to the atmosphere while pressing against the pressure 52, the pressure difference between the inside (vacuum) and the outside (atmospheric pressure) of the photoelectric capsule 50 causes the respective lid members 64 to correspond to each other. It can be integrated with the part 52. This can reliably prevent the photoelectric layer 60 from being exposed to air. Further, in a state where the lid member 64 is attached to the main body 52, the main body 52 is releasable from the first plate 36 which releasably supports the main body 52.
  • a pattern generator 184 having 13 ribbon rows 85 shown in FIG. 22 is used instead of the pattern generator 84 having 12 ribbon rows 85 shown in FIG. Also good.
  • the ribbon row located at the top in FIG. 22 (indicated as 85a for identification in FIG. 22) is any of 12 ribbon rows (main ribbon rows) 85 which are usually used.
  • the ribbon row for backup is used in place of the ribbon row 85 in which the defect has occurred.
  • a plurality of ribbon rows 85a for backup may be provided.
  • each divided partial area A ribbon row for backup may be provided.
  • the ribbons 84b of the pattern generator correspond to the apertures 58a of the photoelectric element 54 at 1: 1, that is, the ribbons 84b and the electron beam irradiated on the wafer are at 1: 1. It corresponded.
  • the present invention is not limited to this, and the light beam from one ribbon 84b of the main ribbon row 85, for example, one ribbon 84b included in the ribbon row adjacent to the backup ribbon row 85a is irradiated to the photoelectric element 54.
  • the electron beam generated thereby is irradiated to a target area (referred to as a first target area) on the wafer which is a target, and one of the ribbons 84b contained in the ribbon array 85a or the main ribbon array 85 is
  • An electron beam generated by irradiating the photoelectric device 54 with a light beam from one ribbon 84b included in another ribbon row may be configured to be able to irradiate the first target area on the wafer. That is, the electron beams generated by the photoelectric element 54 due to the irradiation of the light beams from the two ribbons 84b respectively contained in different ribbon rows may be overlapped and irradiated onto the same target area on the wafer. By this, for example, the dose amount of the target region may be in a desired state.
  • the main ribbon row 85 is less than one time the width of the ribbon 84b (the array pitch of the ribbon 84b). It is also possible to use a pattern generator to which a ribbon array 85b for correction, which is arranged shifted by a distance of.
  • the ribbon array 85b for correction shown in FIG. 23 (A) is a half of the width of the ribbon 84b (FIG. 23 (B) shown by enlarging the vicinity in the circle B of FIG. 23 (A).
  • the ribbons 84b are arranged by being shifted by half (1 ⁇ m) of the arrangement pitch of the ribbons 84b.
  • Subtle dose adjustment such as PEC (Proximity Effect Correction) may be performed using the ribbon array 85b for correction.
  • PEC Proximity Effect Correction
  • the pattern generator may have, in addition to the main ribbon row 85, a ribbon row 85a for backup and a ribbon row 85b for correction.
  • the pattern generator 84 is exemplified by the GLV.
  • the pattern generator 84 may be a reflective liquid display element or a digital micromirror device. It may be configured using a reflective spatial light modulator having a plurality of movable reflective elements such as PLV (Planer Light Valve). Alternatively, depending on the configuration of the optical system inside the light irradiation device 80, the pattern generator may be configured by various transmissive spatial light modulators.
  • the pattern generator 84 is a pattern generator capable of providing a plurality of light beams that can be individually controlled, it is not limited to the spatial light modulator, and it is possible to adjust the intensity and change the size as well as turning the beam on and off A pattern generator can be used. Also, the pattern generator 84 does not have to be capable of beam control (on / off, intensity adjustment, resizing, etc.) for individual light beams, but only for some beams or multiple beams. It may be possible for each beam.
  • FIG. 24 shows an example of the configuration of various types of optical units.
  • the optical unit shown in FIG. 24A can be called an L-type reflection type, and includes an illumination system unit IU including a plurality of illumination systems two-dimensionally arranged in a predetermined positional relationship on an XZ plane, and an XY plane.
  • a plurality of pattern generators 84 two-dimensionally arranged in a positional relationship corresponding to a plurality of illumination systems individually on one surface of the base BS inclined 45 degrees with respect to a plurality of pattern generators 84 and corresponding photoelectric elements
  • an optical unit IMU including a plurality of projection optical systems two-dimensionally arranged on the XY plane in a positional relationship.
  • the optical axes of the plurality of imaging optical systems are not shown but coincide with the optical axes of the corresponding electron beam optical systems.
  • the pattern generator 84 is configured by a reflective spatial light modulator as in the above embodiment.
  • This L-shaped reflection type has the advantage that access to the pattern generator is easy, and the restriction on the size of the light receiving surface of the pattern generator is loose as compared with the above-described embodiment and the like.
  • the optical unit shown in FIG. 24B can be called a U-shaped reflection type, and includes an illumination system unit IU including a plurality of illumination systems two-dimensionally arranged in a predetermined positional relationship on the XY plane, and an XY plane.
  • optical axes of the plurality of projection optical systems are not shown but coincide with the optical axes of the corresponding electron beam optical systems.
  • the optical unit shown in FIG. 24 (C) can be referred to as a straight cylinder transmission type, and an optical system in which an illumination system, a pattern generator 84 and a projection optical system are disposed on the same optical axis 80A) are arranged in an XY two-dimensional manner in the same housing (lens barrel) 78 in a predetermined positional relationship corresponding to a plurality of photoelectric elements.
  • the optical axes of the plurality of light irradiation devices 80A coincide with the optical axis of the corresponding electron beam optical system.
  • the pattern generator 84 it is necessary to use a transmission type spatial light modulator such as a transmission type liquid crystal display element.
  • the straight cylinder transmission type is easy to guarantee the accuracy for each axis, has a compact lens barrel size, and can cope with both of the two methods described later using FIG. 25 (A) and FIG. 15 (B) respectively. There is a merit that there is.
  • FIG. 24D schematically shows an optical unit of the same type as the optical unit 18B employed in the exposure apparatus 100 of the above embodiment.
  • the optical unit shown in FIG. 24 (D) can be called a straight cylinder reflection type, and has the same merit as the straight cylinder transmission type.
  • the light pattern image formed by the pattern generator is projected onto the photoelectric element, and further converted into an electronic image by the photoelectric element to be reduced and imaged on the wafer surface. It is good.
  • the aperture and the photoelectric layer may be integrally formed as in the above-described embodiment, or may be disposed to face each other via a predetermined clearance (a gap, a gap).
  • the photoelectric layer 60 can be arranged in various ways.
  • the extraction electrode 112 is provided around the circular opening 68c of the lid storage plate 68, but instead of or in addition to this, the position of the electron beam is measured on the lid storage plate 68 At least one of the measurement member and the sensor for detecting the electron beam may be provided.
  • a measuring member for measuring the position of the beam of the former a combination of a reflecting surface having an aperture and a detecting device for detecting reflected electrons from the reflecting surface, or a reflecting surface having a mark formed on the surface and the mark A combination with a detection device that detects reflected electrons can be used.
  • FIG. 26 schematically shows the arrangement of an exposure apparatus 1000 according to the second embodiment.
  • the same reference numeral is used, and the description thereof is omitted.
  • the exposure apparatus 1000 divides the first vacuum chamber 34 by the through holes 36 a of the first plate 36 into which the main body 52 of the photoelectric capsule 50 has been inserted.
  • the point closed in an airtight state to the outside by a vacuum partition 132 made of quartz glass or the like and the internal configuration of the first portion 19a of the housing 19 where the first vacuum chamber 34 is formed are the first Is different from the exposure apparatus 100 according to the embodiment. The following description will focus on the differences.
  • FIG. 27 shows the internal configuration of the housing 19 corresponding to one electron beam optical system 70 of the exposure apparatus 1000 according to the second embodiment.
  • the photoelectric element 136 is disposed below the vacuum barrier 132 by a predetermined distance.
  • the photoelectric conversion elements 136 are arranged in the same order as the photoelectric conversion elements 54 described above, and are made of quartz (S i O 2 ) integrally formed by the same method.
  • a light shielding film 58 and a photoelectric layer 60 are provided. At least 72000 apertures 58 a are formed in the light shielding film 58 of the photoelectric element 136 in the same arrangement as described above.
  • the extraction electrode 112 a is disposed below the photoelectric element 136 in the first vacuum chamber 34.
  • the lid housing plate 68 and the vacuum compatible actuator 66 are not provided in the first vacuum chamber 34 (see FIGS. 26 and 27).
  • the electron beam optical unit 18A according to the second embodiment includes the base plate 38, and the lower structure includes the electron beam optical system 70 inside the second vacuum chamber 72, and the first embodiment described above. It is the same as the exposure apparatus 100.
  • the configuration other than the electron beam optical unit 18A is the same as that of the exposure apparatus 100 described above.
  • the photoelectric element 136 is provided separately from the vacuum barrier 132. , May have additional features such as:
  • the field curvature component of the electron beam optical system becomes remarkable.
  • the electron beam optical system has a curvature of field as schematically shown in FIG. 29 as its aberration, as schematically shown in FIG. 29, the photoelectric layer 60 (correctly, the entire photoelectric element 136) Is bent so that a curvature in the opposite phase to the curvature component of the image plane is generated in the photoelectric layer 60, that is, the electron emission surface of the photoelectric layer 60 is curved (non-planar).
  • the amount of curvature of the electron emission surface of the photoelectric layer 60 may be variable.
  • the amount of curvature of the electron emission surface may be changed according to a change in optical characteristics (aberration, for example, curvature of field) of the electron beam optical system 70. Therefore, the amount of curvature of the electron emission surface may be made different among the plurality of photoelectric elements 136 according to the optical characteristics of the corresponding electron beam optical system. Further, FIG.
  • the photoelectric element 136 (photoelectric layer 60) is not limited to bending in one direction, but may of course be deformed three-dimensionally such as bending four corners downward. By changing the way of deformation of the photoelectric element 136, positional deviation, deformation and the like of the optical pattern image due to the spherical aberration can be effectively suppressed.
  • the position of the portion (for example, the central portion) of the electron emission surface and the other portion (for example, the peripheral portion) with respect to the direction of the optical axis AXe of the electron beam optical system 70 It will be different from each other.
  • the thickness of the photoelectric layer 60 may have a distribution so that the positions of a part (for example, the central part) of the electron emission surface and the other part (for example, the peripheral part) in the direction of the optical axis AXe may be different.
  • the electron emission surface of the photoelectric layer 60 may be curved (non-planar) even when the photoelectric element also serves as a vacuum barrier.
  • an actuator capable of driving the aperture integrated photoelectric element in the XY plane is provided. Also good.
  • an aperture integrated photoelectric element as shown in FIG. 30, a multi-pitch type in which a row of apertures 58a of pitch a and a row of apertures 58b of pitch b are formed every other row.
  • the aperture integrated photoelectric device 136a may be used.
  • a zoom function of changing the projection magnification (magnification) in the X-axis direction is used in combination with the above-described optical characteristic adjustment device 87.
  • the beam has a pitch a of a row of apertures 58a and a pitch of b It is possible to switch to the row of the apertures 58b of the light source to irradiate.
  • each of the plurality of beams may be irradiated to the area on the photoelectric element 136a including the corresponding apertures 58a or 58b. That is, the size of each of the plurality of apertures 58a or 58b on the photoelectric element 136a may be smaller than the size of the cross section of the corresponding beam.
  • a row of three or more types of apertures having different pitches is formed on the light shielding film 58 of the photoelectric conversion element in the photoelectric element 136a, and exposure is performed in the same procedure as described above, thereby cutting patterns of three or more pitches. It may be possible to cope with the formation of
  • the intensity of the beam per unit area in the surface to be irradiated of the beam (laser beam) is changed.
  • the relationship with the change may be determined, and the beam intensity may be changed (adjusted) based on the relationship.
  • the intensity of a part of the beam when the magnification is changed may be detected by a sensor, and the intensity of the beam may be changed (adjusted) based on the information of the detected intensity. In the latter case, for example, as shown in FIG.
  • the sensor 135 is provided at one end of the upper surface of the base of the photoelectric element 136, and the actuator 135 described above drives the photoelectric element 136 to make the sensor 135 desired in the XY plane. It may be configured to be movable to the position of.
  • the photoelectric element 136 is movable not only in the XY plane but also in the Z-axis direction parallel to the optical axis AXe, tiltable with respect to the XY plane, and rotatable about the Z axis parallel to the optical axis AXe You may configure it.
  • the photoelectric layer 60 has a certain area, there is no guarantee that the in-plane photoelectric conversion efficiency is uniform, and the photoelectric layer 60 has an in-plane photoelectric conversion efficiency. It is practical to think of having a distribution. Therefore, in accordance with the in-plane distribution of the photoelectric conversion efficiency of the photoelectric layer 60, the intensity of the light beam irradiated to the photoelectric element may be adjusted. That is, assuming that the photoelectric layer 60 has the first portion of the first photoelectric conversion efficiency and the second portion of the second photoelectric conversion efficiency, based on the first photoelectric conversion efficiency and the second photoelectric conversion efficiency, respectively.
  • the intensity of the beam irradiated to the first portion and the intensity of the beam irradiated to the second portion may be adjusted.
  • the intensity of the light beam irradiated to the first portion and the intensity of the light beam irradiated to the second portion are adjusted to compensate for the difference between the first photoelectric conversion efficiency and the second photoelectric conversion efficiency. Also good.
  • the aperture integrated photoelectric device 136 may be replaced by a so-called separate aperture type photoelectric device in which the aperture plate (aperture member) is separate from the photoelectric device.
  • the photoelectric device 140 having the photoelectric layer 60 formed on the lower surface (light emitting surface) of the substrate 134 and the upper side of the substrate 134 of the photoelectric device 140
  • an aperture plate 142 made of a light shielding member in which a large number of apertures 58a are formed at predetermined light (1 ⁇ m or less) clearances (gaps).
  • a drive mechanism capable of driving the aperture plate 142 in the XY plane In the case of using a separate aperture type photoelectric device, it is desirable to provide a drive mechanism capable of driving the aperture plate 142 in the XY plane.
  • a multi-pitch type aperture similar to the aperture integrated photoelectric device 136a described above is formed in the aperture plate 142, the magnification magnification function of the projection optical system 86, the photoelectric device 140 and the aperture plate 142
  • a drive mechanism capable of driving the photoelectric element 140 in the XY plane may be provided.
  • the lifetime of the photoelectric layer 60 can be increased by shifting the relative position between the aperture plate 142 and the photoelectric element 140 in the XY plane.
  • the projection optical system 86 may be configured to be movable in the XY plane with respect to the aperture plate 142.
  • the aperture plate 142 is movable not only in the XY plane but also in the Z-axis direction parallel to the optical axis AXe, tiltable with respect to the XY plane, and rotatable about the Z axis parallel to the optical axis AXe
  • the gap between the photoelectric device 140 and the aperture plate 142 may be adjustable.
  • a drive mechanism for moving the photoelectric device 140 may be provided in the case of using the separate aperture type photoelectric device. Also in this case, the lifetime of the photoelectric layer 60 can be increased by moving the photoelectric element 140 in the XY plane. Further, also when using the integrated photoelectric device described in the first embodiment, a drive mechanism for moving the photoelectric device 54 may be provided. Also in this case, the lifetime of the photoelectric layer 60 can be increased by moving the photoelectric element 54 in the XY plane.
  • the aperture of the aperture plate described above may be used in combination with the aperture of the photoelectric element. That is, an aperture plate may be disposed on the light beam incident side of the aperture integrated photoelectric device described above, and a beam passing through the aperture of the aperture plate may be incident on the photoelectric layer through the aperture of the aperture integrated photoelectric device. .
  • the aperture plate may be replaced when the above-described separate aperture type photoelectric device is used.
  • a plurality of apertures may be formed using a spatial light modulator such as a transmissive liquid crystal element instead of the aperture plate.
  • a device may be provided to change the pitch of the plurality of beams respectively illuminated onto the plurality of apertures of the same array of apertures of the integrated photoelectric element 136a or the aperture plate 142.
  • a plurality of parallel flat plates can be disposed in the optical path between the projection optical system 86 and the photoelectric element, and the pitches of the plurality of beams can be changed by changing the tilt angles.
  • the aperture integrated photoelectric element is not limited to the type shown in FIG. 28A, and for example, as shown in FIG. 28B, in the photoelectric element 136 of FIG. It is also possible to use a photoelectric device 136 b of a type in which the space is filled with the transparent film 144. In the photoelectric element 136b, instead of the transparent film 144, a part of the substrate may be filled in the space in the aperture 58a.
  • a light shielding film 58 having an aperture 58a is formed on the upper surface (light incident surface) of the substrate 134 by vapor deposition of chromium, and the lower surface (light emission surface) of the substrate 134
  • the photoelectric element 136c of the type in which the photoelectric layer 60 is formed or as shown in FIG. 28D, in the photoelectric element 136c of FIG. 28C, the type in which the space in the aperture 58a is filled with the transparent film 144.
  • the photoelectric device 136 d of can also be used.
  • FIG. 28E there is a photoelectric device 136e of a type in which the photoelectric layer 60 is formed on the lower surface of the base material 134 and the chromium film 58 having the apertures 58a is formed on the lower surface of the photoelectric layer 60.
  • the chromium film 58 in FIG. 28E has a function of shielding electrons, not light.
  • the base material 134 is not only made of quartz but also a laminate of quartz and a transparent film (single layer or multilayer) You may configure.
  • the aperture plate can be used together with the photoelectric device 140 to form the separate-aperture type photoelectric device together with the photoelectric device 140 shown in FIG. 32A, for example.
  • the aperture plate has a light shielding member having an aperture like the aperture plate 142
  • a light shielding film 58 having an aperture 58a is formed by vapor deposition of chromium on the lower surface (light emitting surface) of a base 144 made of quartz, for example.
  • the aperture plate 142a as shown in FIG.
  • a base 150 composed of a plate member 146 made of quartz and a transparent film 148, and an aperture formed by deposition of chromium on the lower surface (light emitting surface) of the base 150.
  • the aperture plate 142b has a light shielding film 58 having 58a, an aperture plate 142c in which the space in the aperture 58a is filled with the transparent film 148 in the aperture plate 142a, FIG.
  • E in the aperture plate 142a, the space in the aperture 58a is filled with a portion of the substrate 144.
  • has an aperture plate 142d can be used.
  • the aperture plates 142, 142a, 142b, 142c, 142d can be used upside down.
  • a vacuum partition is provided in the main body 52 instead of the photoelectric element 54 which also serves as the vacuum partition of the main body 52 of the photoelectric capsule 50, and a predetermined clearance is provided under the vacuum partition.
  • the various types of aperture integrated photoelectric elements or separate aperture type photoelectric elements described above may be disposed and housed inside the main body 52.
  • a drive mechanism for the aperture integrated photoelectric device 136 (136a to 136d) or a drive mechanism for moving at least one of the photoelectric device 140 and the aperture plate 142 (142a to 142d) may be provided.
  • the sizes of all the plurality of apertures 58a may not be the same, and the shapes may not be the same for all the apertures 58a.
  • the aperture 58a may be smaller than the size of the corresponding beam so that the corresponding beam is irradiated on the entire area.
  • the aperture plate 142 may not be used.
  • the wafer W is exposed by scanning exposure in which the electron beam is irradiated while moving in the Y-axis direction.
  • a first state in which a plurality of light beams can be irradiated onto the photoelectric layer 60 through the base 134 of the photoelectric element 140 at a first pitch (for example, a pitch (distance) a) in the X axis direction;
  • a second pitch for example, a pitch (space) b).
  • the function of changing the magnification of the projection optical system 86 may be used in combination.
  • an apparatus for changing the pitch (interval) of the plurality of beams emitted from the projection optical system 86 to the photoelectric element 140 may be provided. For example, by arranging a plurality of parallel flat plates in the optical path between the projection optical system 86 and the photoelectric element and changing the tilt angle, it is possible to change the pitch (distance) of the plurality of beams. Also in this case, it may be possible to cope with the formation of a cut pattern of three or more pitches.
  • the optical system provided in the exposure apparatus 100, 1000 is a multi-column type provided with a plurality of multi-beam optical systems 200
  • the present invention is not limited to this, and the optical system may be a single column type multi-beam optical system.
  • the photoelectric element or the aperture plate is used to perform the dose control, magnification control, correction of pattern imaging position deviation, correction of various aberrations such as distortion, etc. described above. The correction of various elements used, the extension of the life of the photoelectric layer, and the like are applicable.
  • an opening may be provided in the peripheral wall portion 76, and the second vacuum chamber 72 and the inside of the stage chamber 10 may be one vacuum chamber.
  • the cooling plate 74 may be removed while leaving only a part of the upper end portion of the peripheral wall portion 72, and the second vacuum chamber 72 and the inside of the stage chamber 10 may be one vacuum chamber.
  • the wafer W is independently carried on the wafer stage WST, and the wafer W is irradiated with a beam from the multi-beam optical system 200 to perform exposure while moving the wafer stage WST in the scanning direction.
  • the exposure apparatus 100 has been described, the present invention is not limited to this, and the above embodiments may be applied to the type of exposure apparatus in which the wafer W is integrated with a table (holder) that can be transported integrally with the wafer called shuttle. (Except for wafer stage WST) can be applied.
  • position measurement system 28 for measuring the position information of wafer stage WST may also be capable of measuring the position information in the direction of three degrees of freedom in the XY plane.
  • the optical system 18 is supported on the floor via the frame 16 forming the ceiling of the stage chamber 10.
  • the ceiling surface of the may be suspended and supported at, for example, three points by a suspension support mechanism having a vibration isolation function.
  • the exposure technology constituting the complementary lithography is not limited to the combination of the liquid immersion exposure technology using an ArF light source and the charged particle beam exposure technology, and, for example, the line and space pattern can be other ArF light source, KrF, etc. It may be formed by a dry exposure technique using a light source.
  • the exposure apparatuses 100 and 1000 according to each of the above embodiments form a fine pattern on a glass substrate to form a mask. It can be suitably applied when manufacturing.
  • An electronic device such as a semiconductor element is a step of designing function and performance of the device, a step of fabricating a wafer from a silicon material, exposure of the wafer by the electron beam exposure apparatus and its exposure method
  • a lithography step for drawing a pattern according to designed pattern data a development step for developing an exposed wafer, an etching step for removing exposed members in portions other than a portion where a resist remains, and etching And a resist removing step for removing the unnecessary resist, a device assembly step (including a dicing step, a bonding step, and a packaging step), an inspection step, and the like.
  • a device pattern is formed on the wafer by executing the above-described exposure method using any of the exposure apparatuses 100 and 1000 of the above-described embodiments in the lithography step.
  • the above-described complementary lithography is performed in the lithography step, and at this time, the above-described exposure method is performed using any of the exposure apparatuses 100 and 1000 of the above-described embodiments, to obtain a more highly integrated micro device. It will be possible to manufacture.
  • an exposure apparatus using an electron beam has been described.
  • the present invention is not limited to the exposure apparatus, but an apparatus that performs at least one of predetermined processing and predetermined processing on a target using an electron beam such as welding
  • the electron beam apparatus of the above embodiment can be applied to an inspection apparatus using an electron beam.
  • the photoelectric layer 60 is formed of an alkaline photoelectric conversion film.
  • the photoelectric layer is not limited to the alkaline photoelectric conversion film.
  • the photoelectric device may be configured using a photoelectric conversion film of a type.
  • shapes such as a member, an opening, and a hole, may be demonstrated using circular, a rectangle, etc., it is needless to say that it is not restricted to these shapes.
  • the reflection type pattern generator 84 since the reflection type pattern generator 84 is used, the light receiving surface of the pattern generator 84 is obliquely incident illuminated by the illumination system 82. In this case, it is required that the light reflected obliquely to the vertical direction (Z direction) in the paper surface (YZ plane) of FIG. 11A on the light receiving surface of the pattern generator 84 be effectively taken by the projection optical system 86 . In other words, it is necessary to effectively guide the reflected light from the light receiving surface of the pattern generator 84 to the photoelectric conversion surface of the photoelectric element (photoelectric conversion element) 54 via the projection optical system 86.
  • the basic configuration of a projection optical system capable of effectively capturing the reflected light from the light receiving surface of the pattern generator 84 illuminated obliquely is described below.
  • FIG. 33 schematically shows a construction of a projection optical system according to a first type of construction.
  • the same general coordinates (X, Y, Z) as in FIG. 11A are used, and the paper surface of FIG. 33 and the paper surface of FIG. 11A are the same XY plane.
  • the same global coordinates (X, Y, Z) as in FIG. 11A are used unless otherwise specified.
  • the Z direction of the general coordinates (X, Y, Z) coincides with the vertical direction of the space
  • the XY plane coincides with the horizontal plane of the space.
  • the normal to the light receiving surface 84d of the pattern generator 84 is inclined relative to the optical axis AXo of the projection optical system 86A on the paper surface (YZ plane) of FIG.
  • the normal to the photoelectric conversion surface 54a of the element 54 is also inclined to the optical axis AXo of the projection optical system 86A in the plane of FIG.
  • the light receiving surface 84d and the photoelectric conversion surface 54a are disposed optically conjugately via the projection optical system 86A, and the photoelectric conversion surface 54a is disposed horizontally.
  • the projection optical system 86A satisfies the shine proof condition with respect to the light receiving surface 84d corresponding to the object surface and the photoelectric conversion surface 54a corresponding to the image surface.
  • the light receiving surface 84d is a surface on which the reflecting surfaces of a plurality of reflective elements (corresponding to the ribbon 84b in the above embodiment) in the reference state are disposed.
  • the light receiving surface 84 d of the pattern generator 84 may be referred to as an arrangement surface on which the reflection surfaces of the plurality of reflective elements included in the pattern generator 84 are arranged.
  • the optical axis AXo of the projection optical system 86A is inclined with respect to the vertical direction (Z direction) in the plane of FIG. 33, and the light receiving surface 84d is inclined with respect to the horizontal direction (Y direction) in the plane of FIG.
  • the normal line of the light receiving surface 84d of the pattern generator 84 may be inclined with respect to the optical axis AXo of the projection optical system 86A in a plane obtained by rotating the YZ plane in FIG. 33 about the Y axis (in the ⁇ y direction). .
  • the normal line of the photoelectric conversion surface 54a of the photoelectric element 54 is also inclined with respect to the optical axis AXo of the projection optical system 86A in the plane obtained by rotating the YZ plane in FIG. Good.
  • the normal to the light receiving surface 84d of the pattern generator 84 is the Z axis in FIG. 33 rotated about the X axis (in the ⁇ x direction) and rotated about the Y axis (in the ⁇ y direction) It is also good.
  • the normal line of the photoelectric conversion surface 54a of the photoelectric element 54 may also be one in which the Z axis in FIG. 33 is rotated about the Y axis (in the ⁇ y direction).
  • the optical axis AXo of the projection optical system 86A need only be inclined from the vertical direction by a predetermined angle around the X axis (that is, in the ⁇ x direction). There is no need to make any changes to Specifically, when the magnification of the projection optical system 86A is 1/6, the inclination angle of the optical axis AXo of the projection optical system 86A is about 1.7 degrees. Further, since the photoelectric conversion surface 54a is disposed along the horizontal plane (XY plane), if the photoelectric conversion surface 54a is set perpendicular to the optical axis AXe of the subsequent electron optical system (electron beam optical system) 70.
  • the optical axis AXe of the electron optical system 70 can be made to coincide in the vertical direction, and the installation of the electron optical system 70 is easy. In this case, since the photoelectric conversion surface 54a is set perpendicular to the optical axis AXe of the electron optical system 70, the burden of aberration correction of the electron optical system 70 can be reduced.
  • a mirror 98 for bending an optical path is disposed on the incident side (light incident side) of the pattern generator 84.
  • a wedge prism 182e having a predetermined included angle (apex angle) is disposed on the incident side of the mirror 98.
  • the optical axis AXo of the projection optical system 86A is inclined to the vertical direction, but as shown in FIG. 34, the optical axis AXo of the projection optical system 86B is in the vertical direction (Z direction)
  • a configuration is also possible in which both the light receiving surface 84 d and the photoelectric conversion surface 54 a are arranged to be inclined with respect to the horizontal direction (Y direction).
  • the second type of configuration shown in FIG. 34 is obtained by simply rotating the first type of configuration shown in FIG. 33 by a predetermined angle around the X axis. Therefore, the light receiving surface 84 d and the photoelectric conversion surface 54 a are disposed optically conjugately via the projection optical system 86 B.
  • a plurality of lenses are disposed between the pattern generator 84 and the aperture stop AS.
  • a plurality of lenses are disposed between the aperture stop AS and the photoelectric conversion surface 54 a of the photoelectric element 54.
  • the projection optical system 86B satisfies the shine proof condition with respect to the light receiving surface 84d corresponding to the object surface and the photoelectric conversion surface 54a corresponding to the image surface.
  • the optical axis AXo extends in the vertical direction, installation of the projection optical system 86B is easy.
  • the photoelectric conversion surface 54a is inclined with respect to the horizontal plane (XY plane)
  • the photoelectric conversion surface 54a is set perpendicular to the optical axis AXe of the subsequent electron optical system 70, the light of the electron optical system 70 is obtained.
  • the axis AXe is inclined relative to the vertical direction.
  • the chief ray Ch of light incident on the photoelectric conversion surface (corresponding to the photoelectric conversion surface of the alkaline photoelectric layer 60 in the above embodiment) 54a provided on the lower side of FIG. 35 is at the position of the photoelectric conversion surface 54a. They are at the same angle without depending on one another, but are not perpendicular to the photoelectric conversion surface 54a.
  • the light shielding film (pinhole) 58 provided between the transparent substrate 56 and the photoelectric conversion surface 54a is omitted for the sake of clarity of the drawing.
  • the optical path length in the transparent substrate 56 is different between the upper marginal ray UPML, the lower marginal ray UNML, and the chief ray Ch, so that coma aberration occurs.
  • the incident side of the transparent substrate 56a is used to correct coma aberration caused due to oblique incidence on the photoelectric conversion surface 54a.
  • the plane (the plane on the right side in FIG. 36) may be orthogonal to the optical axis AXo of the projection optical systems 86A and 86B to form the transparent substrate 56a in a nonparallel plane plate shape, that is, in a wedge prism shape.
  • FIG. 36 the incident side of the transparent substrate 56a is used to correct coma aberration caused due to oblique incidence on the photoelectric conversion surface 54a.
  • the plane (the plane on the right side in FIG. 36) may be orthogonal to the optical axis AXo of the projection optical systems 86A and 86B to form the transparent substrate 56a in a nonparallel plane plate shape, that
  • a window glass 56A for a vacuum partition having a form of a parallel flat plate is disposed on the incident side of the transparent substrate 56a.
  • the incident side surface of the transparent substrate 56a is not limited to be orthogonal to the optical axis AXo of the projection optical systems 86A and 86B, and the incident side surface of the transparent substrate 56a is the surface on the emission side of the transparent substrate 56a (photoelectric It may be non-parallel to the conversion surface 54a).
  • the surface on the incident side of the transparent substrate 56b and the surface on the emission side in parallel, for vacuum barriers arranged on the incident side of the transparent substrate 56b with a space.
  • the surface on the incident side of the window glass 56B (the surface on the right in FIG. 37) is orthogonal to the optical axis AXo of the projection optical systems 86A and 86B, and the normal to the surface on the emission side (the surface on the left in FIG. 37) It may be formed to be inclined with respect to the optical axis AXo in the paper of 37.
  • the transparent substrate 56b in a plane-parallel plate shape and forming the window glass 56B in a wedge prism shape.
  • the window glass 56A, 56B which is the second transparent substrate, is located at the boundary between the vacuum space of the electron optical system 70 and the external atmosphere. Note that, even when it is not necessary to configure the incident side surface of the transparent substrate 56b and the emission side surface in parallel, the incident side surface of the window glass 56B for a vacuum partition is the same as that of the projection optical systems 86A and 86B. It is also possible to make it perpendicular to the optical axis AXo, and to make the normal of the surface on the exit side (the surface on the left side in FIG. 37) inclined with respect to the optical axis AXo in the paper of FIG.
  • an aspheric optical surface having a shape capable of correcting coma aberration generated due to oblique incidence to the photoelectric conversion surface 54a may be introduced into the projection optical systems 86A and 86B.
  • the number of aspheric optical surfaces is not limited to one.
  • the coma aberration generated due to the oblique incidence on the photoelectric conversion surface 54a may be corrected by combining the method and the method of introducing the aspheric optical surface into the projection optical systems 86A and 86B.
  • the light receiving surface 84d of the pattern generator 84 is such that the normal is inclined with respect to the optical axis AXo of the projection optical system 86C in the paper surface (YZ plane) of FIG.
  • the photoelectric conversion surface 54a is disposed orthogonal to the optical axis AXo of the projection optical system 86C. Specifically, the optical axis AXo of the projection optical system 86C extends in the vertical direction (Z direction), and the photoelectric conversion surface 54a is disposed along the horizontal plane (XY plane).
  • the projection optical system 86C has at least one optical member 86Ca eccentrically arranged with respect to the optical axis AXo.
  • the projection optical system 86C has at least one optical member 86Ca eccentrically arranged with respect to the optical axis AXo.
  • a plurality of lenses are disposed between the pattern generator 84 and the aperture stop AS.
  • a plurality of lenses are disposed between the aperture stop AS and the photoelectric conversion surface 54 a of the photoelectric element 54.
  • the optical member 86Ca is decentered with respect to the optical axis AXo of the projection optical system 86C.
  • the optical axis of the optical member 86Ca may be deviated from the optical axis AXo of the projection optical system 86C (e.g., decentered in the Y direction) or may be inclined with respect to the optical axis AXo of the projection optical system 86C. It may be combined.
  • the optical axis AXo extends in the vertical direction, installation of the projection optical system 86C is easy.
  • the photoelectric conversion surface 54a is disposed along the horizontal surface, if the photoelectric conversion surface 54a is set perpendicular to the optical axis AXe of the subsequent electron optical system 70, the optical axis AXe of the electron optical system 70 is The alignment can be made in the vertical direction, and the installation of the electron optical system 70 is easy. In this case, since the photoelectric conversion surface 54a is set perpendicular to the optical axis AXe of the electron optical system 70, the burden of aberration correction of the electron optical system 70 can be reduced. In FIG.
  • the optical member 86Ca disposed eccentrically with respect to the optical axis AXo of the projection optical system 86C is an optical member between the aperture stop AS and the photoelectric conversion surface 54a of the photoelectric element 54.
  • the optical member between the light receiving surface 84d of the pattern generator 84 and the aperture stop AS may be decentered with respect to the optical axis AXo of the projection optical system 86C.
  • the number of optical members disposed eccentrically is not limited to one, and a plurality of optical members may be eccentrically disposed.
  • the light receiving surface 84d and the photoelectric conversion surface 54a of the pattern generator 84 have normals parallel to the optical axis AXo of the projection optical system 86D and the projection optical system 86D They are arranged separately from the optical axis AXo in the Y direction.
  • the plurality of reflective elements (eg, ribbon 84b) of the pattern generator 84 has the normal of its reflective surface parallel to the optical axis AXo of the projection optical system 86D and includes the optical axis AXo of the projection optical system 86D. It is disposed away from the optical axis AXo of the projection optical system 86D in the YZ plane.
  • the optical axis AXo of the projection optical system 86D extends in the vertical direction (Z direction), and both the light receiving surface 84d and the photoelectric conversion surface 54a are disposed along a horizontal plane (XY plane).
  • the light receiving surface 84 d and the photoelectric conversion surface 54 a are disposed optically conjugately via the projection optical system 86 D.
  • a plurality of lenses are disposed between the pattern generator 84 and the aperture stop AS.
  • a plurality of lenses are disposed between the aperture stop AS and the photoelectric conversion surface 54 a of the photoelectric element 54.
  • the projection optical system 86D is telecentric on the exit side (photoelectric conversion surface 54a side) but is non-telecentric on the incident side (light receiving surface 84d side), so the pattern generator 84 and hence the light receiving surface 84d are in the Z direction.
  • the magnification of the projection optical system 86D can be corrected (adjusted) by moving it to Further, since the photoelectric conversion surface 54a is disposed along the horizontal surface, if the photoelectric conversion surface 54a is set perpendicular to the optical axis AXe of the subsequent electron optical system 70, the optical axis AXe of the electron optical system 70 is The alignment can be made in the vertical direction, and the installation of the electron optical system 70 is easy. In this case, since the photoelectric conversion surface 54a is set perpendicular to the optical axis AXe of the electron optical system 70, the burden of aberration correction of the electron optical system 70 can be reduced.
  • the projection optical systems 86A to 86D according to the first to fourth types of configurations have a plurality of reflective elements, and a plurality of light beams from the pattern generator 84 that generate a plurality of light beams with light from the illumination optical system. Is projected onto the photoelectric conversion surface 54 a of the photoelectric element 54. In other words, the projection optical systems 86A to 86D make the light receiving surface 84d of the pattern generator 84 and the photoelectric conversion surface 54a optically conjugate to make a plurality of light beams from the pattern generator 84 photoelectric conversion surfaces 54a. Project to
  • the normal to the light receiving surface 84d of the pattern generator 84 is inclined with respect to the optical axis AXo in the YZ plane including the optical axis AXo of the projection optical systems 86A to 86C.
  • the pattern generator 84 is disposed away from the optical axis AXo of the projection optical system 86D.
  • the chief ray on the side of the pattern generator 84 that is, the chief ray of the reflected light from the pattern generator 84 is received in the YZ plane including the optical axis AXo of the projection optical system 86A to 86D.
  • the first to fourth types of configurations are common in that the chief ray of light incident on the photoelectric conversion surface 54a has a constant angle without depending on the position of the photoelectric conversion surface 54a.
  • the displacement of the photoelectric conversion surface 54a has less influence on the imaging performance of the projection optical systems 86A to 86D. It can be suppressed.
  • the photoelectric conversion surface 54a is displaced in the direction of the optical axis AXo, it is possible to suppress the collapse of the light pattern formed on the photoelectric conversion surface 54a.
  • the shape of the irradiation region of the electron beam formed on the wafer through the electron optical system 70 can be made into a desired shape.
  • the chief ray of light incident on the photoelectric conversion surface 54a is perpendicular to the photoelectric conversion surface 54a without depending on the position of the photoelectric conversion surface 54a.
  • the projection optical systems 86C and 86D are telecentric on the exit side, the influence of the positional deviation of the photoelectric conversion surface 54a on the imaging performance of the projection optical systems 86C and 86D can be further reduced.
  • the photoelectric conversion surface 54a is disposed along the horizontal surface. This means that the optical axis Ae of the subsequent electron optical system 70 can be aligned in the vertical direction, and the optical axis AXe can be set perpendicular to the photoelectric conversion surface 54a. As a result, the burden of aberration correction in the electron optical system 70 can be reduced, the design can be facilitated, and the mechanism can be simplified.
  • the illumination system 82 for illuminating the light receiving surface 84 d of the pattern generator 84 at oblique incidence will be described.
  • a GLV is used as the pattern generator 84, and a rectangular illumination field (slit-like illumination field) elongated in the X direction orthogonal to the paper surface (YZ plane) of FIG. It is necessary to form a plurality of) at intervals in a direction orthogonal to the X direction (Y direction when the light receiving surface 84d is disposed along the XY plane). Then, in order to perform electron beam processing, for example, electron beam exposure well, uniform illumination from an oblique direction is required without depending on the position on the light receiving surface 84 d of the pattern generator 84.
  • uniform illumination of the light receiving surface 84d means making the illuminance in each slit-like illumination field substantially uniform, making the shape of each illumination field into a desired slit shape, and illumination intensity among all the illumination fields.
  • Shape, illumination NA, etc. are meant to be uniform. It goes without saying that the illuminance, the shape, the illumination NA and the like may be dispersed within a predetermined error range among all the illumination fields.
  • the z1 axis is along the optical axis AXi of the illumination optical system 182A
  • the y1 axis is vertical to the paper surface of FIG. 40 in the plane orthogonal to the optical axis AXi Is set.
  • the x1, y1, z1 axes correspond to the X, Y, Z axes, respectively. There is.
  • the light source unit 82a has a rectangular light emitting unit elongated in the x1 direction orthogonal to the paper surface (y1z1 plane) of FIG.
  • a high coherence semiconductor laser light source can be used as the light source unit 82a.
  • the light source section 82a includes, for example, a laser diode 88 that continuously oscillates a laser beam of wavelength 365 nm and an AO deflector 90, and intermittently emits a laser beam (laser beam) of wavelength 365 nm
  • the light source part which can emit light can be used.
  • the light source unit 82a it is possible to use a light source unit that causes the laser diode 88 itself to emit light intermittently.
  • the light source unit 82a may continuously supply laser light. In this case, a shutter may be provided on the light emission side of the light source unit 82a.
  • the illumination optical system 182A includes a collimator optical system 182a for condensing light from the light source unit 82a in order from the light source unit 82a to the irradiated surface 82c orthogonal to the optical axis AXi, and an x1y1 plane orthogonal to the optical axis AXi.
  • An optical integrator 182b having a plurality of wavefront dividing elements (for example, microlenses) 182ba arranged in parallel along the optical axis and a light flux from an illumination pupil on the exit side of the optical integrator 182b are condensed to overlap on the illuminated surface 82c.
  • a Fourier transform optical system 182c The optical integrator 182b may be referred to as a fly eye lens system.
  • the Fourier transform optical system 182c may also be referred to as a focusing optical system.
  • the light from the light source unit 82a enters the optical integrator 182b as a substantially parallel light flux through the collimator optical system 182a.
  • the light flux incident on the optical integrator 182 b is wave front split by the plurality of wave front split elements 182 ba, and one light source image is formed on the emission side of each of the wave front split elements 182 ba. That is, a rectangular light source image elongated in the x1 direction is formed on the illumination pupil on the exit side of each wavefront dividing element 182ba of the optical integrator 182b. That is, a plurality of rectangular light source images elongated in the x1 direction are formed on the illumination pupil of the illumination optical system 182A.
  • the plurality of light source images formed on the illumination pupil of the illumination optical system 182A is not limited to the elongated rectangular shape, and may be, for example, an oval shape or an elliptical shape.
  • the light beams from the plurality of light source images formed on the illumination pupil of the illumination optical system 182A are condensed so as to be superimposed on the illuminated surface 82c via the Fourier transform optical system 182c. That is, the Fourier transform optical system 182c constitutes a condensing optical system which condenses the light flux from the plurality of light source images formed on the illumination pupil on the illuminated surface 82c.
  • the light beams passing through each wavefront dividing element 182ba form interference fringes in the y1 direction, and as shown in FIG. 41, a plurality of slit-shaped illumination fields 82ca elongated in the x1 direction are spaced apart in the y1 direction. It is formed.
  • the light source unit 82a has a light emitting unit whose length in the x1 direction is longer than that in the y1 direction, and its coherence is higher in the y1 direction than in the x1 direction.
  • a wavefront splitting type optical integrator 182b is used, but as shown in FIG. 42, a configuration using a diffractive optical element 182d instead of the optical integrator 182b is also possible.
  • the diffractive optical element 182 d is an optical element that diffracts the light from the light source unit 82 a and emits a plurality of light beams having discrete angles with respect to the optical axis AXi of the illumination optical system 182 B.
  • a diffractive optical element such as a Dammann diffraction grating (dammann diffraction grating) can be used.
  • the light from the light source 82a becomes a substantially parallel light flux through the collimator optical system 182a and is incident on the diffractive optical element 182d.
  • the light having passed through the diffractive optical element 182 d and a plurality of light fluxes having discrete angles with respect to the optical axis AXi are condensed at different positions on the illuminated surface 82 c by the Fourier transform optical system 182 c.
  • the Fourier transform optical system 182c constitutes a condensing optical system that condenses the plurality of light beams from the diffractive optical element 182d onto the illuminated surface 82c.
  • a plurality of slit-shaped illumination fields 82ca elongated in the x1 direction are formed at intervals in the y1 direction.
  • the diffractive optical surface of the diffractive optical element 182d is designed to form a plurality of slit-like illumination fields in the far-field region (far-field region) when substantially parallel incident light beams are incident.
  • a plurality of slit-shaped illumination areas formed in the far-field area (far-field area) are surfaces of a finite distance from the diffractive optical element, Typically, it is formed on the irradiated surface.
  • a plurality of slit-shaped illumination fields 82ca as shown in FIG. 41 are formed on the illuminated surface 82c.
  • the illuminated surface 82c is orthogonal to the optical axis AXi of the illumination optical systems 182A and 182B, it is possible to uniformly illuminate the illuminated surface 82c while forming a plurality of slit-shaped illumination areas 82ca as shown in FIG. It is relatively easy.
  • uniform illumination of the light receiving surface 84d of the pattern generator 84 from the oblique direction by the illumination system 82 is required.
  • FIG. 43 is a view for explaining the inconvenience that occurs when the illuminated surface 82c is non-perpendicular to the optical axis AXi in the illumination optical system 182A shown in FIG.
  • FIG. 43 shows the configuration from the optical integrator 182 b to the irradiated surface 82 c for clarity of the drawing, and the illustration of the collimator optical system 182 a is omitted.
  • the omission of the illustration of the collimator optical system 182a is the same in FIGS. 44 and 46 to 49 as well.
  • a position P3 at which a light beam group 303 emitted from a plurality of light source images in parallel with the optical axis AXi (emitted at a third angle) is collected coincides with the direction of the optical axis AXi.
  • the plane including the positions P1 to P3 is perpendicular to the optical axis AXi.
  • the condensing position P3 is on the irradiated surface 82c whose normal direction is inclined with respect to the optical axis AXi of the illumination optical system 182A
  • the condensing position P1 is on the rear side (or front side)
  • the condensing position P2 is located on the front side (or rear side) of the light receiving surface 82c.
  • the width of the slit-like illumination field 82ca formed at the light collecting position P3 of the illuminated surface 82c (the dimension in the y2 axis direction orthogonal to the x1 axis on the illuminated surface 82c: y2 axis is not shown)
  • the width of the slit-shaped illumination field 82ca formed at the position corresponding to the light collection positions P1 and P2 of the surface 82c to be irradiated may become large.
  • the illuminance of the slit-shaped illumination field 82ca formed at the positions corresponding to the focusing positions P1 and P2 is smaller than the illuminance of the slit-shaped illumination field 82ca formed at the condensing position P3.
  • the illuminated surface 82c can not be uniformly illuminated in terms of shape and illuminance.
  • the pupil intensity distribution related to the light flux reaching the light collecting positions P1 and P2 will be a pupil intensity distribution blurred compared to the pupil intensity distribution related to the light flux reaching the light collecting position P3.
  • the position of the condensing point of the light incident on the irradiation surface 82c should be close to the irradiation surface 82c, the irradiation surface 82c It is required to align the position of the light condensing point of the light incident on the light receiving surface 82c. In other words, it is required to make the plane defined by the condensing point of the light incident on the illuminated surface 82c coincide with the illuminated surface 82c.
  • FIG. 44 by placing a wedge prism 182e in the optical path between the Fourier transform optical system 182c and the illuminated surface 82c in the illumination optical system 182A shown in FIG. 43, the position of the condensing point approaches the illuminated surface 82c.
  • FIG. 44 by placing a wedge prism 182e in the optical path between the Fourier transform optical system 182c and the illuminated surface 82c in the illumination optical system 182A shown in FIG. 43, the position of the condensing point approaches the illuminated surface 82c.
  • the wedge prism 182e has a plane on the incident side orthogonal to the optical axis AXi and is a right angle having an index of refraction n and an included angle (apex angle) of ⁇ .
  • a triangular wedge prism 182 f is used. In this case, as shown in FIG. 45A, the illuminated surface 82c is inclined with respect to the extension axis AXx of the optical axis AXi of the illumination optical system by an amount corresponding to the depression angle ⁇ of the wedge prism 182f.
  • ⁇ ′ arcsin (n ⁇ sin ⁇ )
  • a wedge prism having a depression angle corresponding to the inclination of the illuminated surface 82c with respect to the optical axis AXi in the optical path between the Fourier transform optical system 182c and the illuminated surface 82c.
  • having a depression angle according to the inclination of the surface to be irradiated 82c with respect to the optical axis AXi may have a refractive index and a depression angle according to the inclination of the surface to be irradiated 82c with respect to the optical axis AXi.
  • the illumination optical system 182A brings the plane defined by the condensing point of each light beam closer to the illuminated surface 82c by the wedge prism 182e in the optical path between the Fourier transform optical system 182c and the illuminated surface 82c. Can.
  • the wedge prism 182e brings the position of the condensing point of the light incident on the illuminated surface 82c through the optical integrator 182b and the Fourier transform optical system 182c closer to the illuminated surface (and consequently the light receiving surface 84d of the pattern generator 84)
  • a focusing point adjusting member is configured.
  • the Fourier transform optical system 182c and the wedge prism 182e constitute a focusing optical system 182j for focusing the light flux from the plurality of light source images formed on the illumination pupil on the exit side of the optical integrator 182b onto the illuminated surface 82c. doing.
  • the wedge prism 182e as the focusing point adjusting member has a wedge angle corresponding to the inclination of the light receiving surface 82c with respect to the optical axis AXi of the illumination optical system 182A. Then, the wedge prism 182e is configured to make the position of the condensing point of each light flux approach the illuminated surface 82c, the illumination pupil of the first light flux emitted along the first direction from the illumination pupil on the exit side of the optical integrator 182b. And the light path length from the illumination pupil to the light receiving surface 82c, and the light path length from the illumination pupil to the light receiving surface 82c of the second light flux emitted from the illumination pupil along the second direction different from the first direction.
  • the thickness along the optical axis AXi of the illumination optical system 182A is the sheet of FIG.
  • a step plate 182g which changes stepwise in the vertical direction (y1 direction) of (y1z1 plane) can be used as a focusing point adjustment member.
  • the Fourier transform optical system 182c and the step plate 182g are configured to focus the light collecting optical system 182j for collecting the light flux from the plurality of light source images formed on the illumination pupil on the exit side of the optical integrator 182b.
  • the condensing point adjusting member can also be configured by combining the wedge prism 182 e and the step plate 182 g as needed.
  • the Fourier transform optical system in place of or in addition to the provision of the wedge prism 182e or the step plate 182g, the Fourier transform optical system so that the condensing point of light incident on the illuminated surface 82c approaches the illuminated surface 82c. It is also possible to eccentrically arrange 182c in the vertical direction (y1 direction) of the paper surface (y1z1 plane) of FIG. Alternatively, although not shown, the incident side surface of each of the wavefront dividing elements 182ba of the optical integrator 182b is set to the central method so that the positions of the light condensing points of the light source images approach the irradiated surface 82c. The line may be formed to be inclined with respect to the optical axis AXi of the illumination optical system 182A in the plane of FIG.
  • an illumination pupil space including the illumination pupil on the emission side of the optical integrator 182b in the light path between the optical integrator 182b and the Fourier transform optical system 182c in front of the Fourier transform optical system 182c.
  • a first aberration generating member 182ha that generates astigmatism and a second aberration generating member 182hb that generates coma are attached.
  • the first aberration generating member 182ha uses, for example, an aspheric optical surface defined by a Zernike function represented by Z5 to correct astigmatism generated due to the wedge prism 182e.
  • the second aberration generating member 182hb uses the aspheric optical surface defined by the Zernike function represented by Z7, for example, to correct the coma aberration generated due to the ⁇ prism 182e.
  • the Zernike function represented by Z5 is a function of the fifth term in the Zernike polynomial using a polar coordinate system
  • the Zernike function represented by Z7 is a function of the seventh term in the Zernike polynomial It is.
  • the first aberration generation member 182ha, the second aberration generation member 182hb, the Fourier transform optical system 182c, and the wedge prism 182e are a plurality of light source images formed in the illumination pupil on the exit side of the optical integrator 182b.
  • a condensing optical system 182 j is configured to condense the light flux from the light source on the light receiving surface 84 d of the pattern generator 84, which is the irradiated surface.
  • a haze prism 182e is used. It corrects both coma and astigmatism that are caused due to it.
  • the light condensed on the light receiving surface 84d of the pattern generator 84 which is the surface to be irradiated, forms a point image spot, and the width of each slit-like illumination field 82ca can be narrowed to a desired size and made uniform. it can.
  • the first aberration generation member 182ha and the second aberration generation member 182hb are provided in the illumination pupil space in the configuration shown in FIG. 48
  • the first aberration generation member 182ha and the second aberration generation member 182hb are separate spaces.
  • it may be provided between a plurality of optical members constituting the Fourier transform optical system 182c or between the Fourier transform optical system 182c and the illuminated surface 82c.
  • at least one optical surface of the plurality of optical members constituting the Fourier transform optical system 182c may be a surface shape that generates astigmatism, and an optical member having this optical surface may be used as the first aberration generation member 182ha.
  • At least one optical surface of the plurality of optical members constituting the Fourier transform optical system 182c has a surface shape for generating coma aberration, and the optical member having this optical surface may be used as the second aberration generation member 182hb.
  • the afocal optical system 182k arranged (or decenterable) is used. That is, as the second aberration correction member, the afocal optical system 182k further includes an illumination pupil on the exit side of the optical integrator 182b in the optical path between the optical integrator 182b and the Fourier transform optical system 182c. It is arranged in the pupil space.
  • the afocal optical system 182k further includes an illumination pupil on the exit side of the optical integrator 182b in the optical path between the optical integrator 182b and the Fourier transform optical system 182c. It is arranged in the pupil space.
  • the second aberration correction member 182k, the Fourier transform optical system 182c, and the wedge prism 182e are surfaces to be illuminated with light beams from a plurality of light source images formed on the illumination pupil on the exit side of the optical integrator 182b.
  • a condensing optical system 182 j for condensing light on the light receiving surface 84 d of the pattern generator 84 is configured.
  • the second aberration correction member consisting of the decentering afocal optical system 182k that generates coma aberration.
  • the light condensed on the light receiving surface 84d of the pattern generator 84 which is the irradiation surface, forms an elongated linear image spot in a direction (direction x1) orthogonal to the paper surface of FIG. It can be narrowed to a desired size and made uniform.
  • At least one of the optical members constituting the Fourier transform optical system 182c is decentered from the optical axis AXi, or with respect to the optical axis AXi It may be tilted to generate the required coma.
  • the decentering afocal optical system 182k shown in FIG. 49 may be used in combination with the second aberration correction member 182hb shown in FIG. 48.
  • the aberration correction member 182ha may be used in combination.
  • FIGS. 43, 44, and 46 to 49 the functions of the focusing point adjusting member and the aberration correcting member are described based on the illumination optical system 182A using the wavefront splitting type optical integrator 182b.
  • the above-described focusing point adjusting member and aberration correcting member can be applied to the illumination optical system 182B using the diffractive optical element 182d as well.
  • the wavefront-splitting optical integrator 182b in FIGS. 43, 44, and 46 to 49 may be replaced with a diffractive optical element 182d.
  • the illumination optical systems 182A and 182B include the first light beam (for example, the light beam group 301 in FIG. 43) emitted along the first direction from the illumination pupil on the exit side of the optical integrator 182b; 43 includes a focusing optical system 182 j for focusing the second light beam (for example, the light beam group 302 or 303 in FIG. 43) emitted along the second direction different from the one direction, and the normal is inclined with respect to the optical axis AXi
  • the light-receiving surface 84d of the pattern generator 84 arranged as described above is obliquely incident.
  • the focusing optical system 182 j has a focusing point adjusting member 182 e (such as 182 g) that makes the focusing position in the optical axis AXi direction of the first light flux different from the focusing position in the optical axis AXi direction of the second light flux.
  • the focusing optical system 182 j adjusts the focusing point to bring the plane including the focusing position in the optical axis AXi direction of the first light flux and the focusing position in the optical axis AXi direction of the second light flux closer to the irradiated surface. It has a member 182e.
  • the first light flux and the second light flux from the focusing optical system 182 j are focused at a second point different from the first point and the first point on the light receiving surface 84 d.
  • a wedge prism 182e having a depression angle corresponding to the inclination of the light receiving surface 84d with respect to the optical axis AXi can be used.
  • the wedge prism 182e has a function of reducing the difference between the optical path length of the first light beam from the illumination pupil on the exit side of the optical integrator 182b to the light receiving surface 84d and the optical path length of the second light beam from the illumination pupil to the light receiving surface 84d.
  • a step plate 182g in which the thickness along the optical axis AXi differs in a direction crossing the optical axis AXi (eg, y1 direction in FIG. 46) Can be used.
  • the condensing optical system 182 j includes an aberration correction member 182 h (or 182 k) that corrects an aberration generated due to a condensing point adjustment member such as the wedge prism 182 e or the step plate 182 g.
  • the aberration correction member 182h (182ha, 182hb) has an aspheric optical surface that generates at least one of coma and astigmatism.
  • the aberration correction member 182k has an afocal optical system decentered in a direction transverse to the optical axis AXi.
  • the condensing optical system 182 j is decentered with respect to the optical axis AXi so that the condensing position in the optical axis AXi direction of the first luminous flux and the condensing position in the optical axis AXi of the second luminous flux are different.
  • the center normal of the surface on the incident side of each wavefront dividing element 182ba of the optical integrator 182b is inclined with respect to the optical axis AXi at a predetermined surface (the y1z1 plane in FIG. 47).
  • the focusing position in the direction of the optical axis AXi of one light beam may be different from the focusing position in the direction of the optical axis AXi of the second light beam.
  • the illumination optical systems 182A and 182B condense the first light flux reaching the first position on the light receiving surface 84d of the pattern generator 84 and the second light flux reaching the second position on the light receiving surface 84d.
  • the light receiving surface 84d is arranged to be obliquely incident on the light receiving surface 84d that is disposed so that the normal is inclined with respect to the optical axis AXi.
  • the focusing optical system 182 j is a focusing point adjusting member that makes the focusing position in the direction of the optical axis AXi of the first light flux different from the focusing position in the direction of the optical axis AXi of the second light flux.
  • the illumination optical systems 182A and 182B have a first light flux emitted from the illumination pupil on the exit side of the optical integrator 182b along the first direction, and a second light flux different from the illumination pupil in the first direction.
  • Light condensing optical system 182 j which condenses the second light flux emitted along the direction, and the light condensing optical system 182 j is disposed in a space including the light receiving surface 84 d of the pattern generator 84, and the light of the first light flux
  • a focusing point adjusting member 182e (such as 182g) is provided to make the focusing position in the direction of the axis AXi different from the focusing position in the optical axis direction AXi of the second light flux.
  • the focusing optical system 182j makes the focusing position in the optical axis AXi direction of the first light beam different from the focusing position in the optical axis direction AXi of the second light beam. Since the member 182e (182g and the like) is provided, the condensing position of each light beam can be brought closer to the light receiving surface 84d of the pattern generator 84 by the action of the condensing point adjusting member 182e (182g and the like). It is possible to uniformly illuminate the light-receiving surface 84d disposed to be inclined with respect to the light-emitting surface, and thus to perform good electron beam processing, for example, electron beam exposure.
  • an aberration correction member that corrects an aberration caused due to the wedge prism 182e or the step plate 182g
  • the light source unit 82a, the illumination optical system 182A (or 182B), the pattern generator 84, and the projection optical system 86A (or 86B, 86C, 86D) are for emitting light to the photoelectric element 54.
  • the light irradiation device 80 is configured. That is, the illumination optical system 182A (or 182B) and the projection optical system 86A (or 86B, 86C, 86D) are optically connected with the pattern generator 84 interposed therebetween.
  • FIG. 50 schematically shows how the first to third types of projection optical systems 86A (86B, 86C) are connected to the illumination optical systems 182A (182B) according to a so-called V-shaped bending type.
  • the light from the illumination optical system 182A (182B) (not shown) is reflected by the mirror 98 for bending the optical path, and then obliquely illuminates the light receiving surface 84d of the pattern generator 84.
  • the light reflected by the light receiving surface 84d is reflected by the second light path bending mirror 99, and then irradiated to the photoelectric conversion surface 54a of the photoelectric element 54 through the projection optical system 86A (86B, 86C). .
  • the light path of light reflected by the mirror 98 and incident on the light receiving surface 84d and the light path of light reflected on the light receiving surface 84d and incident on the mirror 99 form a V-shape.
  • the mirror 99 is a deflection member disposed between the pattern generator 84 and the projection optical system 86A (86B, 86C).
  • the mirror 98 has a first reflecting surface disposed between the illumination optical system 182A (182B) and the pattern generator 84, and the mirror 99 is between the pattern generator 84 and the projection optical system 86A (86B, 86C).
  • the first reflection surface that bends the illumination light from the illumination optical system 182A (182B) to be incident on the pattern generator 84 deflects the light path of the illumination optical system non-perpendicularly, so the light receiving surface of the pattern generator 84
  • the surface to be illuminated is illuminated from a direction oblique to the normal to the light receiving surface (surface to be illuminated).
  • the second reflection surface for guiding a plurality of beams from the pattern generator 84 to the projection optical system 86A (86B, 86C) also deflects the optical path of the projection optical system non-perpendicularly.
  • FIG. 51 schematically shows how the fourth type of projection optical system 86D is connected to the illumination optical system 182A (182B) according to the V-shaped bending type.
  • FIG. 52 schematically shows how the first to third types of projection optical system 86A (86B, 86C) are connected to the illumination optical system 182A (182B) according to a so-called N-fold type.
  • the light from the illumination optical system 182A (182B) (not shown) is reflected by the mirror 98 for bending the optical path, and then obliquely illuminates the light receiving surface 84d of the pattern generator 84.
  • the light reflected by the light receiving surface 84d is incident on the projection optical system 86A (86B, 86C), and then is irradiated to the photoelectric conversion surface 54a of the photoelectric element 54.
  • An optical path of light incident on 86A (86B, 86C) forms an N-shape.
  • the mirror 98 is a deflection member disposed between the illumination optical system 182A (182B) and the pattern generator 84.
  • FIG. 53 schematically shows how the fourth type of projection optical system 86D is connected to the illumination optical system 182A (182B) according to the N-fold type.
  • the present invention can be suitably modified without departing from the scope and spirit of the invention which can be read from the claims and the entire specification, and an electron beam apparatus, an electron beam exposure apparatus and an electron beam with such modifications.
  • An inspection apparatus, an electron beam processing apparatus and a device manufacturing method using the electron beam apparatus are also included in the technical concept of the present invention.
  • Stage chamber 34 34 First vacuum chamber 50 Photoelectric capsule 52 Main body 54 Photoelectric element 58 Light shielding film 58a Aperture 58b Aperture 60 Photoelectric layer 62 O ring , 64: lid member, 66: vacuum-compatible actuator, 68: lid storage plate, 68c: circular opening, 70: electron beam optical system, 72: second vacuum chamber, 82: illumination system, 82b: molded optical system, 84 ... pattern generator, 86 ... projection optical system, 88 ... laser diode, 98 ... mirror, 100 ... exposure device, 102 ... circuit board, 102 a ... opening, 110 ... main controller, 112 ... extraction electrode, 134 ... base material, 136 ...

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  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)

Abstract

La présente invention concerne un dispositif à faisceau d'électrons permettant de réduire au minimum le nombre d'électrons perdus qui ne contribuent pas au traitement d'une cible. Le dispositif à faisceau d'électrons, qui expose un élément photoélectrique à la lumière et expose la cible à un faisceau d'électrons produit par l'élément photoélectrique, comprend : un système optique d'éclairage qui éclaire une première surface ; un générateur de motifs qui comprend une pluralité d'éléments réfléchissants placés sur la première surface et qui produit une pluralité de faisceaux lumineux à l'aide de la lumière provenant du système optique d'éclairage ; et un système optique de projection permettant de projeter la pluralité de faisceaux lumineux depuis le générateur de motifs sur la surface de conversion photoélectrique de l'élément photoélectrique. Le système optique d'éclairage comprend un système optique de focalisation permettant de faire converger un premier faisceau émis depuis une pupille d'éclairage dans une première direction et un second faisceau émis depuis la pupille d'éclairage dans une seconde direction différente de la première direction, le système optique d'éclairage éclairant obliquement la première surface qui est agencée de sorte que la ligne normale est inclinée par rapport à l'axe optique du système optique d'éclairage. Le système optique de focalisation comprend un élément de réglage de point focal qui établit une position focale dans la direction d'axe optique du premier faisceau différente d'une position focale dans la direction d'axe optique du second faisceau.
PCT/JP2017/035522 2017-09-29 2017-09-29 Dispositif à faisceau d'électrons, système optique d'éclairage, et procédé de fabrication de dispositif WO2019064503A1 (fr)

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TW107133978A TW201929028A (zh) 2017-09-29 2018-09-27 電子束裝置、照明光學系統、以及元件製造方法

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CN113340927A (zh) * 2020-02-18 2021-09-03 Ict半导体集成电路测试有限公司 具有用于高度测量的干涉仪的带电粒子束装置
US11798783B2 (en) 2020-01-06 2023-10-24 Asml Netherlands B.V. Charged particle assessment tool, inspection method

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WO2006123447A1 (fr) * 2005-05-17 2006-11-23 Kyoto University Dispositif d'exposition d'un faisceau d'electrons
JP2010014765A (ja) * 2008-07-01 2010-01-21 Nikon Corp 投影光学系、露光装置、およびデバイス製造方法
JP2016188953A (ja) * 2015-03-30 2016-11-04 株式会社ニコン 照明光学系、照明方法、露光装置、露光方法、およびデバイス製造方法
JP2017054131A (ja) * 2013-11-22 2017-03-16 カール・ツァイス・エスエムティー・ゲーエムベーハー マイクロリソグラフィ投影露光装置の照明系
JP2017083903A (ja) * 2008-08-28 2017-05-18 株式会社ニコン 照明光学系、露光装置、露光方法、およびデバイス製造方法

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WO2006123447A1 (fr) * 2005-05-17 2006-11-23 Kyoto University Dispositif d'exposition d'un faisceau d'electrons
JP2010014765A (ja) * 2008-07-01 2010-01-21 Nikon Corp 投影光学系、露光装置、およびデバイス製造方法
JP2017083903A (ja) * 2008-08-28 2017-05-18 株式会社ニコン 照明光学系、露光装置、露光方法、およびデバイス製造方法
JP2017054131A (ja) * 2013-11-22 2017-03-16 カール・ツァイス・エスエムティー・ゲーエムベーハー マイクロリソグラフィ投影露光装置の照明系
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Publication number Priority date Publication date Assignee Title
US11798783B2 (en) 2020-01-06 2023-10-24 Asml Netherlands B.V. Charged particle assessment tool, inspection method
US11984295B2 (en) 2020-01-06 2024-05-14 Asml Netherlands B.V. Charged particle assessment tool, inspection method
CN113340927A (zh) * 2020-02-18 2021-09-03 Ict半导体集成电路测试有限公司 具有用于高度测量的干涉仪的带电粒子束装置

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