WO2003083952A2 - Dispositif et capteur servant a enregistrer des signaux lumineux et procede de production - Google Patents

Dispositif et capteur servant a enregistrer des signaux lumineux et procede de production Download PDF

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Publication number
WO2003083952A2
WO2003083952A2 PCT/DE2002/004655 DE0204655W WO03083952A2 WO 2003083952 A2 WO2003083952 A2 WO 2003083952A2 DE 0204655 W DE0204655 W DE 0204655W WO 03083952 A2 WO03083952 A2 WO 03083952A2
Authority
WO
WIPO (PCT)
Prior art keywords
wafer
filter
sensor
detector
light signals
Prior art date
Application number
PCT/DE2002/004655
Other languages
German (de)
English (en)
Other versions
WO2003083952A3 (fr
Inventor
Christian Krummel
Original Assignee
Robert Bosch Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Robert Bosch Gmbh filed Critical Robert Bosch Gmbh
Publication of WO2003083952A2 publication Critical patent/WO2003083952A2/fr
Publication of WO2003083952A3 publication Critical patent/WO2003083952A3/fr

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0216—Coatings
    • H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/02162—Coatings for devices characterised by at least one potential jump barrier or surface barrier for filtering or shielding light, e.g. multicolour filters for photodetectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0203—Containers; Encapsulations, e.g. encapsulation of photodiodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched

Definitions

  • the invention relates to a device according to the preamble of the main claim. It is common knowledge for
  • Recording light signals in particular narrow-band light signals, to use combinations of a filter and a detector.
  • the version usually consists of a housing in whose cover the filter is glued.
  • the detector is glued to the lower part of the housing.
  • the device according to the invention, the sensor according to the invention and the method according to the invention for production with the features of the independent claims have the advantage that the number of sealing surfaces and the number of necessary process steps are reduced and in particular an increased tightness of the device is achieved.
  • the wafers are connected to one another by means of a wafer bonding process.
  • a hermetic seal between the two wafers is possible in a particularly simple manner.
  • this also means that the manufacturing costs are low.
  • the second wafer is made of an infrared-transmissive material. This makes it possible to use the device according to the invention in particular for pyroelectric sensors.
  • a first side (rear side) of the second wafer is connected to a first side (front side) of the first wafer and the filter in the form of a filter layer on a second side (front side) of the second opposite the first side
  • Wafers is provided. This makes the filter particularly simple, especially as an interference filter
  • an opaque material in particular a gel
  • a translucent material is provided on the side next to the first wafer and / or the second wafer. This effectively reduces the influence of scattered light effects. This is particularly the case when the opaque material, for example as a gel, is introduced into the housing, or also housing, of a sensor which comprises a device according to the invention.
  • Figure 1 shows the structure of a sensor according to the prior art
  • Figure 2 shows the structure of a sensor according to the invention or the device according to the invention
  • FIG. 3 shows an improved version of the sensor according to the invention with anti-scatter protection
  • the structure of a known sensor is shown in FIG.
  • the reference numeral 210 denotes a filter which is provided glued in the cover of a housing 230.
  • Detector 220 is provided in the lower part of housing 230, for example glued or bonded.
  • a TO housing is often used as housing 230.
  • a device 10 according to the invention is shown in FIG.
  • the device 10 comprises a first wafer 40 and a second wafer 80.
  • the second wafer 80 is shown in the upper part of FIG. 2 and the first wafer 40 is shown in the lower part of FIG. 2; thus the Top of the first wafer 40 and the bottom of the second wafer 80 shown connected together.
  • the top of the first wafer 40 is also referred to below as the first side of the first wafer 40 and the bottom of the second wafer 80 is also referred to below as the first side of the second wafer 80.
  • the second wafer 80 comprises a second side opposite this first side, which thus corresponds to the top side of the second wafer 80 in the illustration selected in FIG. 2.
  • the first wafer 40 comprises a second side, which lies opposite its first side (top side) and thus corresponds to its underside.
  • the detector can of course also have a greater depth extension into the first wafer 40, if this appears reasonable. All common detectors are possible as detectors or detector principles, in particular photodiodes or phototransistors, for example for visible light, and thermopiles or pyroelectric sensors for light in the infrared range. Depending on the detector principle, e.g. a thermopile can be created in a bulk micro-machining process (BMM process). This means, for example, that the detector has a cavern in FIG. the second side, the first wafer 40 and the sensitive layer 45 on the top, i.e. the first side, the first wafer 40. According to the invention, however, it is also possible to provide a detector which is manufactured using surface micromechanics.
  • the second wafer 80 carries the filter, which is shown in FIG. 2 as filter layer 85. According to the invention, the use of
  • the filter layer 85 is according to the invention in particular on the top of the second wafer 80, ie provided on its second side.
  • Second wafer 80 i.e. on its side to be connected to the first side of the first wafer 40, to provide a cavern provided with the reference number 81.
  • the contact area of the first two sides of the two wafers 40, 80 is smaller than if no cavern is provided. This enables better adjustment of the wafers and the connecting means connecting them.
  • the filter layer is provided as follows: e.g. Interference filter from layer systems such as silicon / silicon oxide silicon / silicon nitride
  • the second wafer 80 is in particular made of an infrared-transmissive material, such as silicon or glass
  • the second wafer 80 also for others
  • spectral ranges of electromagnetic radiation permeable as infrared radiation for example for visible light.
  • the term light signals is used here both for visible light and for other spectral ranges relevant to the respective application of the device according to the invention, in particular the infrared range.
  • the filter layer 85 is applied to the second wafer 80 either before the wafer bonding process or after the wafer bonding process, i.e. either before or after the connection of the two wafers 40, 80 to the second wafer 80 and there in particular to the top, i.e. his second side, upset.
  • the device 10 is manufactured in a wafer process. This means that, as a rule, a multiplicity of devices 10 are processed simultaneously. in the
  • the interconnected wafers which generally have a multiplicity of devices 10 according to the invention, are “sawn”, ie the devices are separated from one another or separated
  • a sawing method is used in particular, although another separation method is of course also possible according to the invention.
  • the device 10 according to the invention is used in particular in a sensor 15 which is shown in FIG. 3.
  • the two wafers 40, 80 are again indicated and provided with reference numerals.
  • the opaque material is provided both next to the first wafer 40 and next to the second wafer 80. According to the invention, the opaque material serves to avoid scattered light effects.
  • the opaque material is provided in particular in the form of an opaque gel, in particular e.g. Silicone gels.
  • the essence of the invention is to propose a cost-effective connection technology for a device and a sensor according to the invention, in particular comprising a light detector and a filter, with as few sealing surfaces as possible.
  • the detector and the filter or the wafers 40, 80 carrying these two elements are connected to one another directly, in particular via a wafer bonding process. This reduces the number of sealing surfaces and the number of process steps required.

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Photometry And Measurement Of Optical Pulse Characteristics (AREA)
  • Solid State Image Pick-Up Elements (AREA)

Abstract

L'invention concerne un dispositif (10) servant à enregistrer des signaux lumineux, un capteur (15) ainsi qu'un procédé de production d'un dispositif (10) et d'un capteur (15). Un détecteur (45) est ménagé sur une première plaquette (40) et un filtre (85) est disposé sur une seconde plaquette (80), la première plaquette (40) et la seconde plaquette (80) étant reliées l'une à l'autre de manière hermétique.
PCT/DE2002/004655 2002-04-03 2002-12-19 Dispositif et capteur servant a enregistrer des signaux lumineux et procede de production WO2003083952A2 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE10214769A DE10214769A1 (de) 2002-04-03 2002-04-03 Vorrichtung und Sensor zur Aufnahme von Lichtsignalen sowie Herstellungsverfahren
DE10214769.8 2002-04-03

Publications (2)

Publication Number Publication Date
WO2003083952A2 true WO2003083952A2 (fr) 2003-10-09
WO2003083952A3 WO2003083952A3 (fr) 2004-07-22

Family

ID=28051079

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/DE2002/004655 WO2003083952A2 (fr) 2002-04-03 2002-12-19 Dispositif et capteur servant a enregistrer des signaux lumineux et procede de production

Country Status (2)

Country Link
DE (1) DE10214769A1 (fr)
WO (1) WO2003083952A2 (fr)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102004002163B4 (de) 2004-01-15 2019-12-24 Robert Bosch Gmbh Gassensormodul und ein Verfahren zu seiner Herstellung
DE102004032176A1 (de) * 2004-07-02 2006-01-26 Robert Bosch Gmbh Beschichteter mikromechanischer Strahler

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4668374A (en) * 1986-07-07 1987-05-26 General Motors Corporation Gas sensor and method of fabricating same
EP0632508A2 (fr) * 1993-07-01 1995-01-04 Sharp Kabushiki Kaisha Photodétecteur avec un filtre multi couche et méthode pour sa fabrication
US5861545A (en) * 1997-04-30 1999-01-19 Honeywell Inc. Micromachined inferential opto-thermal gas sensor
US6124145A (en) * 1998-01-23 2000-09-26 Instrumentarium Corporation Micromachined gas-filled chambers and method of microfabrication
WO2001056921A2 (fr) * 2000-02-02 2001-08-09 Raytheon Company Fabrication avec encapsulation sous vide de dispositifs de systeme mecanique microelectrique comprenant des composants de circuits integres

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0989773A (ja) * 1995-09-20 1997-04-04 Horiba Ltd 赤外線ガス分析計

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4668374A (en) * 1986-07-07 1987-05-26 General Motors Corporation Gas sensor and method of fabricating same
EP0632508A2 (fr) * 1993-07-01 1995-01-04 Sharp Kabushiki Kaisha Photodétecteur avec un filtre multi couche et méthode pour sa fabrication
US5861545A (en) * 1997-04-30 1999-01-19 Honeywell Inc. Micromachined inferential opto-thermal gas sensor
US6124145A (en) * 1998-01-23 2000-09-26 Instrumentarium Corporation Micromachined gas-filled chambers and method of microfabrication
WO2001056921A2 (fr) * 2000-02-02 2001-08-09 Raytheon Company Fabrication avec encapsulation sous vide de dispositifs de systeme mecanique microelectrique comprenant des composants de circuits integres

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
PATENT ABSTRACTS OF JAPAN vol. 1997, no. 08, 29. August 1997 (1997-08-29) -& JP 09 089773 A (HORIBA LTD), 4. April 1997 (1997-04-04) *

Also Published As

Publication number Publication date
WO2003083952A3 (fr) 2004-07-22
DE10214769A1 (de) 2003-10-16

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