WO2003081631A1 - Source de rayons x ayant un foyer de petite taille - Google Patents

Source de rayons x ayant un foyer de petite taille Download PDF

Info

Publication number
WO2003081631A1
WO2003081631A1 PCT/DE2003/001004 DE0301004W WO03081631A1 WO 2003081631 A1 WO2003081631 A1 WO 2003081631A1 DE 0301004 W DE0301004 W DE 0301004W WO 03081631 A1 WO03081631 A1 WO 03081631A1
Authority
WO
WIPO (PCT)
Prior art keywords
target
target device
radiation
carrier
carrier material
Prior art date
Application number
PCT/DE2003/001004
Other languages
German (de)
English (en)
Inventor
Lothar Frey
Christoph Lehrer
Randolf Hanke
Peter Schmitt
Original Assignee
Fraunhofer-Gesellschaft Zur Foerderung Der Angewandten Forschung E.V.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fraunhofer-Gesellschaft Zur Foerderung Der Angewandten Forschung E.V. filed Critical Fraunhofer-Gesellschaft Zur Foerderung Der Angewandten Forschung E.V.
Priority to DE10391780T priority Critical patent/DE10391780D2/de
Publication of WO2003081631A1 publication Critical patent/WO2003081631A1/fr

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J35/00—X-ray tubes
    • H01J35/02—Details
    • H01J35/04—Electrodes ; Mutual position thereof; Constructional adaptations therefor
    • H01J35/08—Anodes; Anti cathodes
    • H01J35/112—Non-rotating anodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2235/00—X-ray tubes
    • H01J2235/08—Targets (anodes) and X-ray converters
    • H01J2235/081—Target material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J35/00—X-ray tubes
    • H01J35/02—Details
    • H01J35/04—Electrodes ; Mutual position thereof; Constructional adaptations therefor
    • H01J35/08—Anodes; Anti cathodes
    • H01J35/112—Non-rotating anodes
    • H01J35/116—Transmissive anodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J35/00—X-ray tubes
    • H01J35/02—Details
    • H01J35/16—Vessels; Containers; Shields associated therewith
    • H01J35/18—Windows
    • H01J35/186—Windows used as targets or X-ray converters

Definitions

  • the invention relates to an X-ray source, which serves as a target device to convert a strongly focused electron beam at its point of impact of the target device into high-frequency useful radiation, which can be X-ray radiation that is highly focused.
  • X-ray radiation is generated with industrial X-ray tubes by braking electrons in a target (a target device). X-rays are generated during the burning of the electrons, but less than 1% of the electron energy. This is emitted by the target (at the point of impact in the target device). The remaining energy is essentially converted into heat.
  • a target a target device
  • X-rays are generated during the burning of the electrons, but less than 1% of the electron energy. This is emitted by the target (at the point of impact in the target device). The remaining energy is essentially converted into heat.
  • there are two different microfocus X-ray tube techniques which can be divided into a closed and an open system. Within these techniques, further subdivisions are possible with respect to the target arrangement, which essentially differ in the directions of the electron and X-ray beams. With a transmission target, these beams are parallel. With an angular target, the electron beam and the X-ray beam are directed differently, that is to say they have different beam angles.
  • the arrangement with the angular target has the advantage that the target material can be attached to a solid support surface and thus higher X-ray powers (X-ray photons per time) can be generated.
  • X-ray powers X-ray photons per time
  • Open systems allow the exchange of all components within the tube, such as target, filament, etc.
  • the vacuum is generated by appropriate pumps. This cannot be done with closed systems, which after their manufacture (for example as closed metal-ceramic or glass tubes) do not allow a non-destructive and recoverable intervention into the interior.
  • Microfocus focal spots produced according to the described prior art are generated by a possibly multistage electromagnetic focusing of an accelerated electron beam on the target (the target device).
  • the target is a high-Z material applied flatly on a suitable carrier material, for example beryllium as carrier material and tungsten as target material.
  • the layer thickness of the target is of the order of a few ⁇ m.
  • the electron focal spots can be focused on sizes significantly smaller than 1 ⁇ m, due to scattering effects of the electrons within the point of impact (the target of the target device) focal spot sizes are clear below 1 ⁇ m but no longer realistic.
  • the maximum power that can be absorbed by the target correlates with the size of the focal spot and is now essentially 1 watt / ⁇ m focal spot diameter in the technology shown.
  • the applied high-Z material also extends beyond the extent of the focal spot. It is therefore more extensive than the focal spot actually created on a small section of this special target layer.
  • a microfocus X-ray device is also accessible in the prior art, cf. in addition EP 815 582 B1 (Medixtec).
  • an X-ray source is described in detail, which irradiates a focused electron beam onto a target that consists of two layers, a braking layer (there 32) and a carrier layer (there 33).
  • the strongly focused electron beams have a reshaping effect on the brake layer and in FIG. 4A there, in comparison to FIG. 4 there, it is proposed to reshape the brake layer in favor of an embedded braking point which, as doping, has only such a dimension that the electron beam has while reducing its Diameter used as the braking volume.
  • a further reduction in the volume of the radiation source can thus be achieved, which is below the braking volume (designated 40 there), which is also referred to as the scattering volume or scattering zone of the particle beam.
  • This doping is described in detail in the carrier material and the reduction in volume in the paragraphs there [020] to [023], there columns 5 and 6.
  • the small doping zones as the X-ray source are melted off by the high current density and either the beam is passed through with the target device stationary a deflection device (there 19) is deflected and fed to another doping zone, or the target itself is changed in its spatial position with a motor device (there 35), each controlled by an offset control (there 34).
  • the current density is increased in order to obtain the same yield of X-ray photons per time, cf. there the "target material doping" 41 and the increase in current given there in the sense of an "electron beam density", cf. there column 6, lines 25 to 27.
  • the previously described change in the point of impact is used.
  • the aim, starting point and task of the invention is to further reduce the focal spot size, but in particular to design the resolution of the focal spot so that the shape and orientation can be optimized for an application, in particular the intensity and resolution is formed in one direction, such as eg through a line-shaped source.
  • the x-ray source can be installed in an x-ray device which works with an electron beam device as described in the B1 patent document described at the beginning.
  • Other beam sources are also possible.
  • the focus is to be placed on the beam source, which relates to the target or the target device, on which the conversion of the electron beam is converted into a high-frequency, in particular X-ray-frequency, radiation component. Only a very small proportion of the energy of the electron beam is actually converted.
  • the generation of X-rays by means of industrial X-ray tubes takes place by braking in the target, in accordance with the proposal referred to here, in such an area that is delimited by the target.
  • the small active focal spot is therefore not affected by the scattering effect of the electron beam (as an example of the
  • Particle beam limited, but is limited by a target material that has a defined dimension in the lateral and vertical directions (claim 1).
  • the dimensions determine the lateral resolution of the focal spot.
  • the shape and orientation (of the target material or focal spot) is optimized for the application.
  • the target material which is limited in its extent (vertical and lateral direction), is not a planarly applied high-Z material, the dimension of which is considerably larger than the size of the focal spot. Rather, the extent of the target is essentially limited to the size of the focal spot.
  • a focal spot is not only to be understood as a "spot" in the sense of a possibly irregular circle or a square, but also those geometric shapes that are optimized for use in their shape as a line, point or ring or line (bar) are.
  • the lateral and vertical extension is not only carried out by doping in a low-Z material, as "target material doping", but instead as an essentially completely steel-producing high-Z target material Space of the total lateral and vertical extension of this target material is the low-Z material in the case of embedding (claim 6), or is applied as a target material limited in its extent to the carrier material (claim 4 or 17).
  • the target is located on or in a carrier, which can be described as a carrier material and which takes over the properties of a mechanical holding of the target and the dissipation of heat generated by the conversion into X-rays.
  • the carrier material is designed in such a way that as few X-rays as possible are to be formed, which should originate solely or mainly from the high-Z target material, which essentially generates the entire volume of the beam. This (X-ray frequency) useful radiation should be weakened as little as possible by the carrier material.
  • Suitable materials for the high-Z target material are e.g. Tungsten.
  • a suitable material for the carrier material is beryllium.
  • Other materials with a high atomic number Z can be used for the target material, cf. plus the
  • EP 815 582 B1 column 3, lines 23 to 26.
  • Other materials for the carrier material are described after the passage cited, column 3, lines 27 to 29.
  • the carrier material is a low X-ray absorption in the desired wavelength range, e.g. due to a low atomic number, high thermal and mechanical strength as well as good thermal conductivity.
  • diamond and silicon carbide (SiC) are recommended.
  • the geometric shape and orientation of the target can be adapted to the application. Different geometric shapes are e.g. Line, point or different sizes, in particular on a common carrier, so that different beam characteristics, resolution and / or intensities of the X-rays can be realized with one and the same arrangement (claim 2).
  • the delimited target can be arranged at several locations on the carrier, for example on the surface, directly below the surface, covered by a cover layer or entirely within the carrier material (embedded without being exposed to the surface).
  • Structures can be introduced on the back of the carrier, which have local intensity increase or beam shaping property (claim 3).
  • the manufacture of the described target device with its structures can be achieved by direct writing methods with which material is removed or material is deposited, for example by means of ion, electron or laser beams.
  • the new X-ray sources with their limited extent of full-surface or full-volume target material can also be implemented as so-called multiple target arrangements.
  • These have N targets on one carrier, e.g. controlled by suitable deflection of the electron beam, which enables the selection of a specific one of the N targets.
  • the usability of the arrangement can thereby be increased. It is increased by a factor of N in the service life.
  • applications can also be used in which the sample is irradiated under different geometric arrangements (angles) without the sample, the X-ray tube or the detector having to be moved.
  • the multiple targets on the same carrier need not be made of the same material, so they can consist of different materials.
  • the various geometric shapes described above can also be used.
  • Designs of the carrier also locally increase the intensities or the beam shaping, such as structures on the back of a carrier for local intensity increase or beam shaping.
  • a trench or an X-ray optical structure are examples of such structures which are arranged on, in or in immediate succession to the rear.
  • Alternatives are corresponding structures which allow scattered electrons to emerge from the carrier by exposing the target (the spatially / geometrically limited target) without further generation of X-rays.
  • the spatial / geometric limitation of the target extension can be pronounced in various designs, which are explained below using examples. What they all have in common is that they have defined dimensions in the lateral and vertical directions, which determine the lateral resolution of the focal spot. This also means that the point of impact of the particle beam (for example the electron beam) can be greater than the limited lateral extent of the target material. After the carrier material but little or hardly
  • the major portion of the small focal spot is defined by the extent of the target material.
  • This extension can also result in a design of the focal spot in the designs described deviates from a punctiform formation.
  • the current of the electron beam does not need to be increased. Nevertheless, focussing of significantly less than 1 ⁇ m is achieved, which extends into the nanostructuring in a specific embodiment.
  • the geometric design be it the lateral and vertical extension and / or the geometric design as a special shape, determines
  • Beam characteristic in the sense of an intensity distribution of the X-ray source is a Beam characteristic in the sense of an intensity distribution of the X-ray source.
  • those beam sources that deviate from a point-like impact point are optimized for a special adaptation to the target object (the desired application).
  • Geometric shapes of this kind cannot be produced by the "electron bulb" previously used for beam formation.
  • This not only reduces the dimension of the focal spot in order to optically detect reduced sizes, but the shape of the focal spot can be optimized for certain applications.
  • Figure 1 is a first embodiment of a target device 21, in which the target is applied to a carrier B (on the surface).
  • Figure 2 illustrates a second embodiment (design) of a
  • Target device 22 in which the target is built into the carrier layer B.
  • FIG. 3 illustrates a third embodiment 23, in which a cover layer D is provided in addition to the embodiment according to FIG.
  • FIG. 4 illustrates a fourth embodiment 24, in which the target A is produced buried in the carrier.
  • FIG. 5 illustrates a further embodiment 25, in which at least one of the shapes of FIGS. 1 to 4 described above is used and a geometric shape is selected for the target material A (here A "or A *).
  • FIG. 6 illustrates a sixth embodiment 26 with a target material A embedded in strip form 40 in the carrier material B.
  • FIG. 7 illustrates a further embodiment 27 with a structure on the back of the carrier material 30, for increasing the local intensity or
  • Beam formation here a trench 30 as a structure.
  • FIG. 5 there is a special geometric configuration such that an annular one Structure (perpendicular to the paper plane) can be given.
  • FIG. 6 the designs that were explained for FIGS. 1 to 4 and 7 are possible.
  • the x-ray source described is shown as target devices 21 to 27, which are realized in a transmission arrangement or in an angular arrangement with a small active focal spot, which are not limited by scattering effects of the electron beam, but are limited by the target material A itself, which is in each case in extends laterally and in the vertical direction (has a defined dimension).
  • the lateral resolution of the focal spot as an X-ray source with the emitted X-ray radiation R is determined by this target material and its spatial / geometric dimension.
  • FIG. 5 by irradiating the X-rays onto a lower-lying layer 50, which is applied to a second carrier material and in which an annular design is to be irradiated by X-rays, shows a possibility of the shape and orientation of the laterally and vertically defined focal spot on the application.
  • this application will be optimized, so that FIG. 5 is only used as an example, which also gives corresponding guidelines for understanding the other exemplary embodiments for implementation that is optimized for the application.
  • the optimization is based in particular on the intensity and resolution in one direction, such as by strip or line sources, which are explained below.
  • Target A consisting of target material A as the high-Z material, scatters more than the low-Z materials that are used as carrier materials. Examples of the formation of these materials were initially given in the general part and are not to be repeated here.
  • the target is located on or in a carrier material B, which can have different configurations according to FIGS. 1 to 7.
  • the carrier fulfills the function of a mechanical holder for the target. At the same time, it forms a window for the X-ray tube for transmitting arrangements.
  • the carrier and the carrier material are responsible for dissipating the heat generated on the focal spot and for this purpose has the highest possible thermal conductivity.
  • the material of the carrier B consists of such a low-Z material which generates little X-radiation and weakens the useful radiation (the X-ray radiation R) generated by the target material as little as possible.
  • a target material A is applied rectangularly to a carrier material B in the side view.
  • This target material is irradiated with an electron beam e.
  • the target material 11 itself has a transverse extension a1 and a thickness a2. These dimensions in the lateral and vertical directions determine the shape (intensity distribution) of the X-ray radiation R.
  • This X-ray radiation R falls out in the direction perpendicular to the surface of the carrier material B from the high-Z material A, directed downward and in the example shown is a filter disc C passed, which suppresses interference radiation of the carrier B.
  • This filter C can be designed as a single component which is narrow in the vertical direction with respect to the carrier B or as part of the carrier, for example as a layer on the underside of the carrier material B.
  • a target material A is provided in FIG. 2 in spatial / geometric extension 12, which appears rectangular in a sectional view shown here.
  • the sectional view shows that the target material is built into the carrier layer B, e.g. to achieve improved thermal loads (heat dissipation) and mechanical properties.
  • the filter (or the filter C) likewise shown corresponds to that of FIG. 1.
  • FIG. 2 it is arranged directly on the underside of the carrier, which is possible as a layer on the underside or as a separately placed filter disk.
  • Ion beam structuring or local deposition e.g. by means of an ion beam, an electron beam or a laser beam.
  • FIG. 2 can be produced as an embodiment by producing a trench which is filled with the target material 12. There is no doping here, but an introduction of the target material as a solid material into the predetermined spatial / geometric dimension, which is predetermined by the trench in the example described.
  • Methods that use etching techniques or ion beams can produce the trench in depth a2 and width a1 and subsequently one can be carried out by means of large-area coating and etching back or by means of local deposition
  • the trench is filled, for example by means of ion beams, electron beams or laser beams.
  • FIG. 3 Another design according to FIG. 3 is similar to that of FIG. 2 when the corresponding manufacturing techniques are used. Here is also an embedding of the
  • Target material A is provided, the spatial / geometric configuration 13 of which results in a specific spatial / geometric configuration of the X-ray beam R obtained.
  • a cover layer D is applied, which produces an improved mechanical support and an improvement in the thermal operating conditions.
  • the cover layer D is substantially thinner than the support layer B, in the example shown essentially in the order of the depth a2 of the target A. Even at elevated operating temperatures, the target A can be operated with the cover layer D after improved heat dissipation also in the vicinity of the Targets A is reached. Operation in the liquid state is also possible, or with an increased vapor pressure.
  • Layer D preferably has a high thermal conductivity and good mechanical stability.
  • FIG. 4 Another embodiment 24 is FIG. 4.
  • a target 14 is produced from target material A buried in carrier material B.
  • the target 14 can be installed during the manufacture of the carrier B, or can be produced in the finished carrier B by ion implantation.
  • a parting plane 52 shows one possibility of generation, in which the target 14 is initially generated as described in FIG. 1.
  • a layer is then applied over a large area above surface 52, which produces target A buried.
  • the layer above the level 52 corresponds to the material from which the carrier B is made anyway below this layer.
  • FIG. 5 a further design in which the target A is given a preferred geometric shape.
  • a special beam characteristic is generated, for example as a line target or as a ring shape or in the form of several individual (spaced) target areas, which result in a multi-point radiation source. They enable phase contrast and holography applications.
  • Shown in Figure 5 is specifically a ring arrangement, which is shown in section. The two sections shown can also be line targets or in the form of individual target areas, which is why the third dimension of the representation is omitted in the graphical representation.
  • a larger area irradiation by an electron beam is also possible after the limitation of the X-ray beam R "and R * in the target arrangement 25 according to FIG. 5 is determined by the geometric dimension and lateral extent of the target material.
  • FIG. 7 A further design of a target device 27 is shown in FIG. 7.
  • a structure is provided on the back for local intensity increase or beam shaping, for example a trench 30 or other X-ray optical structures or structures which are arranged on, in or in direct succession to the back.
  • structures can be used which allow scattered electrons to emerge from the holder (carrier material B) by exposing the target 17 without further generation of X-rays. These were explained using FIG. 5.
  • the trench 30 shows an exposure of the target 17 with the lateral extension r.
  • This X-ray optical structure is introduced on the surface facing away from the point of impact of the electron beam (the flat plane of the back) by ablative machining. It extends in its depth to the underside of target material A and exposes it in so far.
  • the target materials A described preferably have a high atomic number Z.
  • the carrier material B is low
  • X-ray absorption in the desired wavelength range desired e.g. through the choice of materials B with a low atomic number, high thermal and mechanical strength as well as good thermal conductivity.
  • materials B with a low atomic number, high thermal and mechanical strength as well as good thermal conductivity.
  • examples of such materials are beryllium, silicon, aluminum, carbon.
  • the corresponding structures are formed in the nanometer range in order to generate the smallest possible beam extensions in the lateral direction.
  • Particularly preferred are beam extensions in the lateral direction that deviate from a point-shaped (circular) impact point and move in the area on the edge, such as through lines, strips or bars. According to FIG. 5, more complex geometries are also possible as a ring.
  • FIG. 6 Special designs of the structures are shown side by side in FIG. 6, which can be used both in combination and individually as target materials A or A '.
  • the target material A is inclined into the strip
  • the carrier material B which is also irradiated by the electron beam e in the vicinity of this formation of the target material 40 hardly contributes to the formation of the X-ray beam R.
  • a filter disc C according to one of the preceding examples in FIGS. 1 or 2 can be used.
  • the embodiment in FIG. 6 is an "elongated" strip-shaped lowering of a target material into the carrier material, in which the lateral direction of extent, at least in one of the two surface directions, is narrower than the depth.
  • a narrow design of an X-ray beam can also be achieved in the beam direction S2 if the target material A according to design 16 in FIG. 6 is applied to the carrier material B.
  • the beam direction is parallel to
  • This configuration is an angular arrangement in which X-rays propagate perpendicular to the radiation of the electron beam e (not shown here).
  • the trench 30 can be at least partially filled by a further material E, preferably such a material that has a small atomic number.
  • This material is located where the X-ray beam emerges. Compared to the carrier material B, it can have a physical property which differs in terms of thermal conductivity, mechanical stability or the generation of useful beams.

Landscapes

  • X-Ray Techniques (AREA)

Abstract

L'invention concerne un dispositif cible destiné à une source de rayonnement destinée à émettre un rayonnement R haute fréquence, notamment à fréquence de rayons X, à partir du dispositif cible (21,...,26) qui est exposé à un faisceau de particules (e) afin d'émettre le rayonnement haute fréquence (R) à partir d'un point d'incidence (12,11) de ce dispositif cible. Une source du rayonnement haute fréquence (R) est placée dans la zone du point d'incidence du faisceau de particules du dispositif cible. Un matériau cible (A) qui freine les particules du faisceau de particules et provoque ainsi le rayonnement haute fréquence est associé à un matériau porteur (B) dans la zone du point d'incidence (12,11,15,40) de telle manière que la localisation spatiale du matériau cible, dans une direction latérale et verticale (a1,a2,r), comporte sensiblement uniquement la zone qui agit comme source principale du rayonnement haute fréquence (R). La résolution latérale ou la dimension d'un foyer formé par le faisceau de particules (e) est déterminée et essentiellement limitée au matériau cible (A).
PCT/DE2003/001004 2002-03-26 2003-03-26 Source de rayons x ayant un foyer de petite taille WO2003081631A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
DE10391780T DE10391780D2 (de) 2002-03-26 2003-03-26 Röntgenstrahlquelle mit einer kleinen Brennfleckgrösse

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE10213496 2002-03-26
DE10213496.0 2002-03-26

Publications (1)

Publication Number Publication Date
WO2003081631A1 true WO2003081631A1 (fr) 2003-10-02

Family

ID=28050861

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/DE2003/001004 WO2003081631A1 (fr) 2002-03-26 2003-03-26 Source de rayons x ayant un foyer de petite taille

Country Status (2)

Country Link
DE (1) DE10391780D2 (fr)
WO (1) WO2003081631A1 (fr)

Cited By (31)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1783809A2 (fr) * 2005-11-07 2007-05-09 COMET GmbH Tube à rayons X aux foyer nanometrique
DE102005053324A1 (de) * 2005-11-07 2007-05-16 Comet Gmbh Target für eine Mikrofocus- oder Nanofocus-Röntgenröhre
DE102010009276A1 (de) * 2010-02-25 2011-08-25 Dürr Dental AG, 74321 Röntgenröhre sowie System zur Herstellung von Röntgenbildern für die zahnmedizinische oder kieferorthopädische Diagnostik
US20150092924A1 (en) * 2013-09-04 2015-04-02 Wenbing Yun Structured targets for x-ray generation
US9390881B2 (en) 2013-09-19 2016-07-12 Sigray, Inc. X-ray sources using linear accumulation
US9449781B2 (en) 2013-12-05 2016-09-20 Sigray, Inc. X-ray illuminators with high flux and high flux density
US9448190B2 (en) 2014-06-06 2016-09-20 Sigray, Inc. High brightness X-ray absorption spectroscopy system
US9570265B1 (en) 2013-12-05 2017-02-14 Sigray, Inc. X-ray fluorescence system with high flux and high flux density
US9594036B2 (en) 2014-02-28 2017-03-14 Sigray, Inc. X-ray surface analysis and measurement apparatus
EP2757570A3 (fr) * 2013-01-18 2017-08-09 Canon Kabushiki Kaisha Cible à rayons x du type à transmission et tube de génération de rayonnement comprenant celle-ci
US9823203B2 (en) 2014-02-28 2017-11-21 Sigray, Inc. X-ray surface analysis and measurement apparatus
EP3399304A1 (fr) * 2017-05-02 2018-11-07 FEI Company Source de rayons x innovante destinée à être utilisée dans l'imagerie tomographique
US10247683B2 (en) 2016-12-03 2019-04-02 Sigray, Inc. Material measurement techniques using multiple X-ray micro-beams
US10269528B2 (en) 2013-09-19 2019-04-23 Sigray, Inc. Diverging X-ray sources using linear accumulation
US10295486B2 (en) 2015-08-18 2019-05-21 Sigray, Inc. Detector for X-rays with high spatial and high spectral resolution
US10295485B2 (en) 2013-12-05 2019-05-21 Sigray, Inc. X-ray transmission spectrometer system
US10297359B2 (en) 2013-09-19 2019-05-21 Sigray, Inc. X-ray illumination system with multiple target microstructures
US10304580B2 (en) 2013-10-31 2019-05-28 Sigray, Inc. Talbot X-ray microscope
US10349908B2 (en) 2013-10-31 2019-07-16 Sigray, Inc. X-ray interferometric imaging system
US10352880B2 (en) 2015-04-29 2019-07-16 Sigray, Inc. Method and apparatus for x-ray microscopy
US10401309B2 (en) 2014-05-15 2019-09-03 Sigray, Inc. X-ray techniques using structured illumination
US10416099B2 (en) 2013-09-19 2019-09-17 Sigray, Inc. Method of performing X-ray spectroscopy and X-ray absorption spectrometer system
US10520454B2 (en) 2017-05-02 2019-12-31 Fei Company Innovative X-ray source for use in tomographic imaging
US10578566B2 (en) 2018-04-03 2020-03-03 Sigray, Inc. X-ray emission spectrometer system
US10656105B2 (en) 2018-08-06 2020-05-19 Sigray, Inc. Talbot-lau x-ray source and interferometric system
US10658145B2 (en) 2018-07-26 2020-05-19 Sigray, Inc. High brightness x-ray reflection source
US10845491B2 (en) 2018-06-04 2020-11-24 Sigray, Inc. Energy-resolving x-ray detection system
US10962491B2 (en) 2018-09-04 2021-03-30 Sigray, Inc. System and method for x-ray fluorescence with filtering
USRE48612E1 (en) 2013-10-31 2021-06-29 Sigray, Inc. X-ray interferometric imaging system
US11056308B2 (en) 2018-09-07 2021-07-06 Sigray, Inc. System and method for depth-selectable x-ray analysis
US11152183B2 (en) 2019-07-15 2021-10-19 Sigray, Inc. X-ray source with rotating anode at atmospheric pressure

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102018201245B3 (de) * 2018-01-26 2019-07-25 Carl Zeiss Industrielle Messtechnik Gmbh Target für eine Strahlungsquelle, Strahlungsquelle zum Erzeugen invasiver elektromagnetischer Strahlung, Verwendung einer Strahlungsquelle und Verfahren zum Herstellen eines Targets für eine Strahlungsquelle

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR984432A (fr) * 1943-09-23 1951-07-05 Tubix Sa Tube pour rayons x de grande longueur d'onde
GB1249341A (en) * 1968-10-08 1971-10-13 Rigaku Denki Company Ltd Improvements in or relating to x-ray tubes
US5148462A (en) * 1991-04-08 1992-09-15 Moltech Corporation High efficiency X-ray anode sources
EP0815582B1 (fr) * 1995-03-20 1999-09-22 Medixtec GmbH Medizinische Geräte Installation radiographique a microfoyer
JP2001035428A (ja) * 1999-07-22 2001-02-09 Shimadzu Corp Ｘ線発生装置

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR984432A (fr) * 1943-09-23 1951-07-05 Tubix Sa Tube pour rayons x de grande longueur d'onde
GB1249341A (en) * 1968-10-08 1971-10-13 Rigaku Denki Company Ltd Improvements in or relating to x-ray tubes
US5148462A (en) * 1991-04-08 1992-09-15 Moltech Corporation High efficiency X-ray anode sources
EP0815582B1 (fr) * 1995-03-20 1999-09-22 Medixtec GmbH Medizinische Geräte Installation radiographique a microfoyer
JP2001035428A (ja) * 1999-07-22 2001-02-09 Shimadzu Corp Ｘ線発生装置
US6377660B1 (en) * 1999-07-22 2002-04-23 Shimadzu Corporation X-ray generator

Cited By (40)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102005053324B4 (de) * 2005-11-07 2012-08-02 Diamond Materials Gmbh Target für eine Mikrofocus- oder Nanofocus-Röntgenröhre
DE102005053324A1 (de) * 2005-11-07 2007-05-16 Comet Gmbh Target für eine Mikrofocus- oder Nanofocus-Röntgenröhre
EP1783809A3 (fr) * 2005-11-07 2008-06-18 COMET GmbH Tube à rayons X aux foyer nanometrique
DE102005053386A1 (de) * 2005-11-07 2007-05-16 Comet Gmbh Nanofocus-Röntgenröhre
EP1783809A2 (fr) * 2005-11-07 2007-05-09 COMET GmbH Tube à rayons X aux foyer nanometrique
DE102010009276A1 (de) * 2010-02-25 2011-08-25 Dürr Dental AG, 74321 Röntgenröhre sowie System zur Herstellung von Röntgenbildern für die zahnmedizinische oder kieferorthopädische Diagnostik
WO2011104011A2 (fr) 2010-02-25 2011-09-01 DüRR DENTAL AG Tube à rayons x et système permettant de produire des images aux rayons x pour la médecine dentaire ou le diagnostic d'orthopédie des mâchoires
EP2757570A3 (fr) * 2013-01-18 2017-08-09 Canon Kabushiki Kaisha Cible à rayons x du type à transmission et tube de génération de rayonnement comprenant celle-ci
US20150092924A1 (en) * 2013-09-04 2015-04-02 Wenbing Yun Structured targets for x-ray generation
US10976273B2 (en) 2013-09-19 2021-04-13 Sigray, Inc. X-ray spectrometer system
US9390881B2 (en) 2013-09-19 2016-07-12 Sigray, Inc. X-ray sources using linear accumulation
US10297359B2 (en) 2013-09-19 2019-05-21 Sigray, Inc. X-ray illumination system with multiple target microstructures
US10269528B2 (en) 2013-09-19 2019-04-23 Sigray, Inc. Diverging X-ray sources using linear accumulation
US10416099B2 (en) 2013-09-19 2019-09-17 Sigray, Inc. Method of performing X-ray spectroscopy and X-ray absorption spectrometer system
US10653376B2 (en) 2013-10-31 2020-05-19 Sigray, Inc. X-ray imaging system
USRE48612E1 (en) 2013-10-31 2021-06-29 Sigray, Inc. X-ray interferometric imaging system
US10304580B2 (en) 2013-10-31 2019-05-28 Sigray, Inc. Talbot X-ray microscope
US10349908B2 (en) 2013-10-31 2019-07-16 Sigray, Inc. X-ray interferometric imaging system
US10295485B2 (en) 2013-12-05 2019-05-21 Sigray, Inc. X-ray transmission spectrometer system
US9570265B1 (en) 2013-12-05 2017-02-14 Sigray, Inc. X-ray fluorescence system with high flux and high flux density
US9449781B2 (en) 2013-12-05 2016-09-20 Sigray, Inc. X-ray illuminators with high flux and high flux density
US9823203B2 (en) 2014-02-28 2017-11-21 Sigray, Inc. X-ray surface analysis and measurement apparatus
US9594036B2 (en) 2014-02-28 2017-03-14 Sigray, Inc. X-ray surface analysis and measurement apparatus
US10401309B2 (en) 2014-05-15 2019-09-03 Sigray, Inc. X-ray techniques using structured illumination
US9448190B2 (en) 2014-06-06 2016-09-20 Sigray, Inc. High brightness X-ray absorption spectroscopy system
US10352880B2 (en) 2015-04-29 2019-07-16 Sigray, Inc. Method and apparatus for x-ray microscopy
US10295486B2 (en) 2015-08-18 2019-05-21 Sigray, Inc. Detector for X-rays with high spatial and high spectral resolution
US10247683B2 (en) 2016-12-03 2019-04-02 Sigray, Inc. Material measurement techniques using multiple X-ray micro-beams
US10466185B2 (en) 2016-12-03 2019-11-05 Sigray, Inc. X-ray interrogation system using multiple x-ray beams
US10520454B2 (en) 2017-05-02 2019-12-31 Fei Company Innovative X-ray source for use in tomographic imaging
EP3399304A1 (fr) * 2017-05-02 2018-11-07 FEI Company Source de rayons x innovante destinée à être utilisée dans l'imagerie tomographique
US10578566B2 (en) 2018-04-03 2020-03-03 Sigray, Inc. X-ray emission spectrometer system
US10845491B2 (en) 2018-06-04 2020-11-24 Sigray, Inc. Energy-resolving x-ray detection system
US10989822B2 (en) 2018-06-04 2021-04-27 Sigray, Inc. Wavelength dispersive x-ray spectrometer
US10658145B2 (en) 2018-07-26 2020-05-19 Sigray, Inc. High brightness x-ray reflection source
US10991538B2 (en) 2018-07-26 2021-04-27 Sigray, Inc. High brightness x-ray reflection source
US10656105B2 (en) 2018-08-06 2020-05-19 Sigray, Inc. Talbot-lau x-ray source and interferometric system
US10962491B2 (en) 2018-09-04 2021-03-30 Sigray, Inc. System and method for x-ray fluorescence with filtering
US11056308B2 (en) 2018-09-07 2021-07-06 Sigray, Inc. System and method for depth-selectable x-ray analysis
US11152183B2 (en) 2019-07-15 2021-10-19 Sigray, Inc. X-ray source with rotating anode at atmospheric pressure

Also Published As

Publication number Publication date
DE10391780D2 (de) 2005-02-17

Similar Documents

Publication Publication Date Title
WO2003081631A1 (fr) Source de rayons x ayant un foyer de petite taille
DE112010002512B4 (de) Röntgenstrahlerzeugungsvorrichtung und Untersuchungsvorrichtung, die diese verwendet
EP0815582B1 (fr) Installation radiographique a microfoyer
EP1946088B1 (fr) Dispositif de tomosynthese aux rayons x
EP1783809A2 (fr) Tube à rayons X aux foyer nanometrique
DE2727907C2 (fr)
EP2038642B1 (fr) Système pour générer un rayonnement électromagnétique et procédé pour faire fonctionner ce système
EP2667384B1 (fr) Appareil d'analyse par rayons X avec diaphragme à rayon X monocristallin et procédé de fabrication d'un diaphragme à rayon X monocristallin
DE60217083T2 (de) Austrittsfenster für eine quelle zur emission von elektronenstrahlen
DE102009003673A1 (de) Elektronenquelle auf der Basis von Feldemittern mit minimierten Strahl-Emittanzwachstum
DE202012013222U1 (de) Kontaktelement
EP1447656A1 (fr) Echantillons pour microscope électronique à transmission
DE112009001604T5 (de) Thermionenemitter zur Steuerung des Elektronenstrahlprofils in zwei Dimensionen
DE19544203A1 (de) Röntgenröhre, insbesondere Mikrofokusröntgenröhre
DE112019003777T5 (de) Röntgenreflexionsquelle mit hoher helligkeit
DE112014003782T5 (de) lonenstrahlvorrichtung und Emitterspitzenausformverfahren
DE102012103974A1 (de) Vorrichtung und Verfahren zur Erzeugung zumindest eines Röntgenstrahlen abgebenden Brennflecks
DE60033374T2 (de) Röntgenmikroskop mit einer röntgenstrahlungsquelle für weiche röntgenstrahlungen
DE102013220189A1 (de) Röntgenquelle und Verfahren zur Erzeugung von Röntgenstrahlung
WO2008006552A1 (fr) Cible refroidie par liquide pour générer un rayonnement électromagnétique
EP2461332B1 (fr) Convertisseur point-trait
DE102005053324B4 (de) Target für eine Mikrofocus- oder Nanofocus-Röntgenröhre
DE102016120902B4 (de) Vielstrahl-Teilchenmikroskop
DE102020109906B4 (de) Röntgenquelle sowie System und Verfahren zur Erzeugung von Röntgenstrahlung
DE102023101453B3 (de) Verfahren und vorrichtung zur erzeugung von sekundärstrahlung, insbesondere euv-strahlung, mit wenigstens einem laser

Legal Events

Date Code Title Description
AK Designated states

Kind code of ref document: A1

Designated state(s): DE US

AL Designated countries for regional patents

Kind code of ref document: A1

Designated state(s): AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IT LU MC NL PT RO SE SI SK TR

121 Ep: the epo has been informed by wipo that ep was designated in this application
DFPE Request for preliminary examination filed prior to expiration of 19th month from priority date (pct application filed before 20040101)
REF Corresponds to

Ref document number: 10391780

Country of ref document: DE

Date of ref document: 20050217

Kind code of ref document: P

WWE Wipo information: entry into national phase

Ref document number: 10391780

Country of ref document: DE

122 Ep: pct application non-entry in european phase