WO2003076332A1 - Dispositif et procede pour la realisation d'un nanofil conducteur - Google Patents
Dispositif et procede pour la realisation d'un nanofil conducteur Download PDFInfo
- Publication number
- WO2003076332A1 WO2003076332A1 PCT/JP2003/002713 JP0302713W WO03076332A1 WO 2003076332 A1 WO2003076332 A1 WO 2003076332A1 JP 0302713 W JP0302713 W JP 0302713W WO 03076332 A1 WO03076332 A1 WO 03076332A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- electrodes
- substrate
- molecular assembly
- electrode
- voltage
- Prior art date
Links
- 239000002070 nanowire Substances 0.000 title claims abstract description 39
- 238000004519 manufacturing process Methods 0.000 title claims description 65
- 239000003792 electrolyte Substances 0.000 claims abstract description 39
- 239000000758 substrate Substances 0.000 claims description 135
- 239000008151 electrolyte solution Substances 0.000 claims description 57
- 238000000034 method Methods 0.000 claims description 48
- 229910052751 metal Inorganic materials 0.000 claims description 42
- 239000002184 metal Substances 0.000 claims description 42
- 238000010894 electron beam technology Methods 0.000 claims description 39
- 238000005868 electrolysis reaction Methods 0.000 claims description 36
- 239000004020 conductor Substances 0.000 claims description 23
- WEVYAHXRMPXWCK-UHFFFAOYSA-N Acetonitrile Chemical compound CC#N WEVYAHXRMPXWCK-UHFFFAOYSA-N 0.000 claims description 21
- 238000003780 insertion Methods 0.000 claims description 19
- 230000037431 insertion Effects 0.000 claims description 19
- 238000005530 etching Methods 0.000 claims description 18
- 239000012212 insulator Substances 0.000 claims description 17
- 229920002120 photoresistant polymer Polymers 0.000 claims description 15
- 230000001678 irradiating effect Effects 0.000 claims description 12
- 238000011161 development Methods 0.000 claims description 10
- IEQIEDJGQAUEQZ-UHFFFAOYSA-N phthalocyanine Chemical compound N1C(N=C2C3=CC=CC=C3C(N=C3C4=CC=CC=C4C(=N4)N3)=N2)=C(C=CC=C2)C2=C1N=C1C2=CC=CC=C2C4=N1 IEQIEDJGQAUEQZ-UHFFFAOYSA-N 0.000 claims description 8
- 239000000470 constituent Substances 0.000 claims description 5
- 239000003960 organic solvent Substances 0.000 claims description 5
- 238000013459 approach Methods 0.000 claims description 4
- 230000008569 process Effects 0.000 claims description 4
- USFPINLPPFWTJW-UHFFFAOYSA-N tetraphenylphosphonium Chemical compound C1=CC=CC=C1[P+](C=1C=CC=CC=1)(C=1C=CC=CC=1)C1=CC=CC=C1 USFPINLPPFWTJW-UHFFFAOYSA-N 0.000 claims description 4
- 150000002894 organic compounds Chemical class 0.000 claims description 3
- IDUKLYIMDYXQQA-UHFFFAOYSA-N cobalt cyanide Chemical compound [Co].N#[C-] IDUKLYIMDYXQQA-UHFFFAOYSA-N 0.000 claims description 2
- 238000002347 injection Methods 0.000 claims 1
- 239000007924 injection Substances 0.000 claims 1
- 239000013078 crystal Substances 0.000 description 17
- 239000011521 glass Substances 0.000 description 12
- VZSRBBMJRBPUNF-UHFFFAOYSA-N 2-(2,3-dihydro-1H-inden-2-ylamino)-N-[3-oxo-3-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)propyl]pyrimidine-5-carboxamide Chemical compound C1C(CC2=CC=CC=C12)NC1=NC=C(C=N1)C(=O)NCCC(N1CC2=C(CC1)NN=N2)=O VZSRBBMJRBPUNF-UHFFFAOYSA-N 0.000 description 9
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 9
- 150000001875 compounds Chemical class 0.000 description 9
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 9
- 239000000126 substance Substances 0.000 description 9
- 238000010586 diagram Methods 0.000 description 8
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 8
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 7
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 6
- 229910052737 gold Inorganic materials 0.000 description 6
- 239000010931 gold Substances 0.000 description 6
- 239000000243 solution Substances 0.000 description 6
- HMUNWXXNJPVALC-UHFFFAOYSA-N 1-[4-[2-(2,3-dihydro-1H-inden-2-ylamino)pyrimidin-5-yl]piperazin-1-yl]-2-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)ethanone Chemical compound C1C(CC2=CC=CC=C12)NC1=NC=C(C=N1)N1CCN(CC1)C(CN1CC2=C(CC1)NN=N2)=O HMUNWXXNJPVALC-UHFFFAOYSA-N 0.000 description 5
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 description 5
- 238000000429 assembly Methods 0.000 description 5
- 230000000712 assembly Effects 0.000 description 5
- 230000006870 function Effects 0.000 description 5
- -1 organic acid salt Chemical class 0.000 description 5
- 238000005452 bending Methods 0.000 description 4
- 229910052799 carbon Inorganic materials 0.000 description 4
- 239000003153 chemical reaction reagent Substances 0.000 description 4
- 238000000609 electron-beam lithography Methods 0.000 description 4
- 230000003993 interaction Effects 0.000 description 4
- 230000000704 physical effect Effects 0.000 description 4
- 229910052697 platinum Inorganic materials 0.000 description 4
- AYEKOFBPNLCAJY-UHFFFAOYSA-O thiamine pyrophosphate Chemical compound CC1=C(CCOP(O)(=O)OP(O)(O)=O)SC=[N+]1CC1=CN=C(C)N=C1N AYEKOFBPNLCAJY-UHFFFAOYSA-O 0.000 description 4
- 238000007740 vapor deposition Methods 0.000 description 4
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 3
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 3
- 239000003795 chemical substances by application Substances 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 238000000206 photolithography Methods 0.000 description 3
- 150000004032 porphyrins Chemical class 0.000 description 3
- 229910052709 silver Inorganic materials 0.000 description 3
- 239000004332 silver Substances 0.000 description 3
- 239000002887 superconductor Substances 0.000 description 3
- 238000012546 transfer Methods 0.000 description 3
- LDXJRKWFNNFDSA-UHFFFAOYSA-N 2-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)-1-[4-[2-[[3-(trifluoromethoxy)phenyl]methylamino]pyrimidin-5-yl]piperazin-1-yl]ethanone Chemical compound C1CN(CC2=NNN=C21)CC(=O)N3CCN(CC3)C4=CN=C(N=C4)NCC5=CC(=CC=C5)OC(F)(F)F LDXJRKWFNNFDSA-UHFFFAOYSA-N 0.000 description 2
- LZJCVNLYDXCIBG-UHFFFAOYSA-N 2-(5,6-dihydro-[1,3]dithiolo[4,5-b][1,4]dithiin-2-ylidene)-5,6-dihydro-[1,3]dithiolo[4,5-b][1,4]dithiine Chemical class S1C(SCCS2)=C2SC1=C(S1)SC2=C1SCCS2 LZJCVNLYDXCIBG-UHFFFAOYSA-N 0.000 description 2
- WZFUQSJFWNHZHM-UHFFFAOYSA-N 2-[4-[2-(2,3-dihydro-1H-inden-2-ylamino)pyrimidin-5-yl]piperazin-1-yl]-1-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)ethanone Chemical compound C1C(CC2=CC=CC=C12)NC1=NC=C(C=N1)N1CCN(CC1)CC(=O)N1CC2=C(CC1)NN=N2 WZFUQSJFWNHZHM-UHFFFAOYSA-N 0.000 description 2
- IAZDPXIOMUYVGZ-UHFFFAOYSA-N Dimethylsulphoxide Chemical compound CS(C)=O IAZDPXIOMUYVGZ-UHFFFAOYSA-N 0.000 description 2
- MKYBYDHXWVHEJW-UHFFFAOYSA-N N-[1-oxo-1-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)propan-2-yl]-2-[[3-(trifluoromethoxy)phenyl]methylamino]pyrimidine-5-carboxamide Chemical compound O=C(C(C)NC(=O)C=1C=NC(=NC=1)NCC1=CC(=CC=C1)OC(F)(F)F)N1CC2=C(CC1)NN=N2 MKYBYDHXWVHEJW-UHFFFAOYSA-N 0.000 description 2
- JUJWROOIHBZHMG-UHFFFAOYSA-N Pyridine Chemical compound C1=CC=NC=C1 JUJWROOIHBZHMG-UHFFFAOYSA-N 0.000 description 2
- WYURNTSHIVDZCO-UHFFFAOYSA-N Tetrahydrofuran Chemical compound C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 238000002109 crystal growth method Methods 0.000 description 2
- 125000000524 functional group Chemical group 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 238000004943 liquid phase epitaxy Methods 0.000 description 2
- LQNUZADURLCDLV-UHFFFAOYSA-N nitrobenzene Chemical compound [O-][N+](=O)C1=CC=CC=C1 LQNUZADURLCDLV-UHFFFAOYSA-N 0.000 description 2
- 229920006395 saturated elastomer Polymers 0.000 description 2
- YIWGJFPJRAEKMK-UHFFFAOYSA-N 1-(2H-benzotriazol-5-yl)-3-methyl-8-[2-[[3-(trifluoromethoxy)phenyl]methylamino]pyrimidine-5-carbonyl]-1,3,8-triazaspiro[4.5]decane-2,4-dione Chemical compound CN1C(=O)N(c2ccc3n[nH]nc3c2)C2(CCN(CC2)C(=O)c2cnc(NCc3cccc(OC(F)(F)F)c3)nc2)C1=O YIWGJFPJRAEKMK-UHFFFAOYSA-N 0.000 description 1
- JTPNRXUCIXHOKM-UHFFFAOYSA-N 1-chloronaphthalene Chemical compound C1=CC=C2C(Cl)=CC=CC2=C1 JTPNRXUCIXHOKM-UHFFFAOYSA-N 0.000 description 1
- LPZOCVVDSHQFST-UHFFFAOYSA-N 2-[4-[2-(2,3-dihydro-1H-inden-2-ylamino)pyrimidin-5-yl]-3-ethylpyrazol-1-yl]-1-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)ethanone Chemical compound C1C(CC2=CC=CC=C12)NC1=NC=C(C=N1)C=1C(=NN(C=1)CC(=O)N1CC2=C(CC1)NN=N2)CC LPZOCVVDSHQFST-UHFFFAOYSA-N 0.000 description 1
- 239000004215 Carbon black (E152) Substances 0.000 description 1
- NIPNSKYNPDTRPC-UHFFFAOYSA-N N-[2-oxo-2-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)ethyl]-2-[[3-(trifluoromethoxy)phenyl]methylamino]pyrimidine-5-carboxamide Chemical compound O=C(CNC(=O)C=1C=NC(=NC=1)NCC1=CC(=CC=C1)OC(F)(F)F)N1CC2=C(CC1)NN=N2 NIPNSKYNPDTRPC-UHFFFAOYSA-N 0.000 description 1
- AFCARXCZXQIEQB-UHFFFAOYSA-N N-[3-oxo-3-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)propyl]-2-[[3-(trifluoromethoxy)phenyl]methylamino]pyrimidine-5-carboxamide Chemical compound O=C(CCNC(=O)C=1C=NC(=NC=1)NCC1=CC(=CC=C1)OC(F)(F)F)N1CC2=C(CC1)NN=N2 AFCARXCZXQIEQB-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 150000001298 alcohols Chemical class 0.000 description 1
- 239000012298 atmosphere Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000009835 boiling Methods 0.000 description 1
- 239000002041 carbon nanotube Substances 0.000 description 1
- 229910021393 carbon nanotube Inorganic materials 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000011231 conductive filler Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- ZMXDDKWLCZADIW-UHFFFAOYSA-N dimethylformamide Substances CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 150000002391 heterocyclic compounds Chemical class 0.000 description 1
- 229930195733 hydrocarbon Natural products 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 230000002452 interceptive effect Effects 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 230000006386 memory function Effects 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- 238000001451 molecular beam epitaxy Methods 0.000 description 1
- 238000004776 molecular orbital Methods 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- UMJSCPRVCHMLSP-UHFFFAOYSA-N pyridine Natural products COC1=CC=CN=C1 UMJSCPRVCHMLSP-UHFFFAOYSA-N 0.000 description 1
- 238000006479 redox reaction Methods 0.000 description 1
- 230000027756 respiratory electron transport chain Effects 0.000 description 1
- 239000012047 saturated solution Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 150000003384 small molecules Chemical class 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000006557 surface reaction Methods 0.000 description 1
- YLQBMQCUIZJEEH-UHFFFAOYSA-N tetrahydrofuran Natural products C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D9/00—Electrolytic coating other than with metals
- C25D9/02—Electrolytic coating other than with metals with organic materials
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having a potential-jump barrier or a surface barrier
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/20—Carbon compounds, e.g. carbon nanotubes or fullerenes
- H10K85/221—Carbon nanotubes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/30—Coordination compounds
- H10K85/311—Phthalocyanine
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S977/00—Nanotechnology
- Y10S977/70—Nanostructure
- Y10S977/701—Integrated with dissimilar structures on a common substrate
- Y10S977/72—On an electrically conducting, semi-conducting, or semi-insulating substrate
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S977/00—Nanotechnology
- Y10S977/70—Nanostructure
- Y10S977/762—Nanowire or quantum wire, i.e. axially elongated structure having two dimensions of 100 nm or less
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S977/00—Nanotechnology
- Y10S977/84—Manufacture, treatment, or detection of nanostructure
- Y10S977/895—Manufacture, treatment, or detection of nanostructure having step or means utilizing chemical property
- Y10S977/896—Chemical synthesis, e.g. chemical bonding or breaking
- Y10S977/899—Electrolytic
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
- Y10T29/49117—Conductor or circuit manufacturing
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
- Y10T29/49117—Conductor or circuit manufacturing
- Y10T29/49124—On flat or curved insulated base, e.g., printed circuit, etc.
- Y10T29/49155—Manufacturing circuit on or in base
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
- Y10T29/49117—Conductor or circuit manufacturing
- Y10T29/49124—On flat or curved insulated base, e.g., printed circuit, etc.
- Y10T29/49155—Manufacturing circuit on or in base
- Y10T29/49156—Manufacturing circuit on or in base with selective destruction of conductive paths
Definitions
- the present invention relates to a method and an apparatus for producing molecular aggregates such as nanowires and needle-like crystals. More specifically, an electrolytic device for manufacturing nano-level minute molecular assemblies, such as a method for manufacturing conductive nanowires and nano-level needle-like crystals, which applies electrolytic crystal growth to the production of molecular assemblies. And a method for manufacturing an electrolytic device.
- an electrolytic device for manufacturing nano-level minute molecular assemblies such as a method for manufacturing conductive nanowires and nano-level needle-like crystals, which applies electrolytic crystal growth to the production of molecular assemblies.
- Methods for growing molecular aggregates include liquid phase epitaxy (LPE), molecular beam epitaxy (MBE), chemical transport (CyT), and chemical vapor.
- LPE liquid phase epitaxy
- MBE molecular beam epitaxy
- CyT chemical transport
- CVD growth
- a relatively large monomolecular assembly or a monomolecular assembly film can be obtained.
- a method of growing crystals by electrolysis which is a method of growing crystals using an electrolysis reaction (for example, Experimental Chemistry Course 12 Functionality of Substances, 4th edition, pages 40 to 45) Published by Maruzen Bookstore).
- Japanese Patent Publication No. 6-321686 discloses that, in an organic solvent in which a metal organic acid salt and a carbon cluster are dissolved, the compound is formed on the cathode side by the electrolytic molecular assembly growth method.
- molecular nanowires are produced using a molecular vapor deposition method or a molecular beam method in an ultra-high vacuum. Also known are methods for producing molecular nanowires in parallel with dendrimer-closed-shell molecules and methods for producing carbon nanotubes.
- conventional electrolysis aims at obtaining as large a crystal as possible, and does not attempt to obtain a molecular assembly on a nanoscale.
- conventional electrolysis methods require obtaining crystals of high purity in order to obtain crystals on the millimeter scale or higher. Had the problem of being difficult.
- the carbon cluster produced by the method for producing a carbon cluster described in Japanese Patent Application Laid-Open No. 6-321686 also has a size on the order of millimeters and is not controlled on a molecular level.
- the invention described in the same publication aims at obtaining a larger single-molecule aggregate, and does not aim at obtaining a nanoscale molecular aggregate as in the present invention.
- the invention described in the same publication uses an electrolytic crystal growth method to obtain a molecular assembly, but does not use a narrow electrode between electrodes as in the present invention, and has a millimeter-level or a sub-millimeter level. Only molecular assemblies of the size are obtained.
- molecular aggregates are molecular aggregates that have a closed shell structure (a structure in which two electrons are contained in the H OMO (highest occupied orbital)) and have a half-occupied molecular orbital (SOMO).
- H OMO highest occupied orbital
- SOMO half-occupied molecular orbital
- At least one of the above-mentioned objects is determined by the following invention.
- Two electrodes an electrolytic cell holding an electrolyte and the two electrodes, wherein the distance between the two electrodes is lnm to 100 ⁇ m, and the molecular assembly is formed in the electrolytic cell.
- An electrolytic apparatus for producing a molecular assembly by holding an electrolytic solution containing molecules constituting the above, and applying a voltage to the two electrodes in a state where the electrolytic solution is in contact with the two electrodes. This By minimizing the distance between the electrodes as described above, for example, a minute molecular aggregate such as a conductive nanowire can be manufactured.
- a voltage controller for controlling a voltage applied to the two electrodes or a current controller for controlling a current supplied to the two electrodes, or both of them.
- the above two electrodes are formed on a substrate,
- An electrolytic device for producing the molecular assembly according to (1) An electrolytic device for producing the molecular assembly according to (1).
- a voltage controller for producing a molecular assembly comprising: an electrolytic cell comprising: an electrolytic solution holding section for holding an electrolytic solution; and a substrate inserting section for inserting the substrate.
- the two electrodes are present in the middle of each electrode and are protrusions which are convex portions directed toward the other electrode, or at the tip of each electrode and are in the other electrode direction.
- the electrode has a projection formed by bending the electrode, and the distance between the closest parts of the two electrodes provided on the substrate is lnm to 100 (m).
- the electrolyte containing the constituent molecules is held, and the electrolyte and the two Electrolytic apparatus for producing a molecular assembly by in a state where the electrodes are in contact electric current to the two electrodes.
- the respective tips of the projections of the two opposed electrodes are tapered as they face each other in parallel or approach the other projection.
- the electrode has an insulating portion covered with an insulator, and a portion of the substrate insertion portion, which is in contact with the substrate when the substrate is inserted into the substrate insertion portion, is covered with an insulator.
- An electrolyzer for producing the molecular assembly according to item 1).
- An electrolytic cell wherein the electrolytic cell includes: an electrolytic solution holding unit that holds an electrolytic solution; and a substrate inserting unit into which the substrate is inserted. In the substrate inserting unit, the substrate is inserted into the substrate inserting unit. Sometimes contact with substrate The touching portion is covered with an insulator, and the two electrodes are present in the middle of each electrode, and are protrusions that are convex portions toward the other electrode, or each of the two electrodes.
- a protruding portion at the tip of the electrode which is formed by bending the electrode in the direction of the other electrode, and each of the protruding portions of the two opposing electrodes faces in parallel with each other.
- the two electrodes are tapered as they approach the other protrusion, and the two electrodes have an insulating portion covered with an insulator, and are provided on the substrate.
- a voltage control device for controlling a voltage to be applied, and a method for manufacturing an electrolytic device for manufacturing a molecular assembly comprising: a metal film forming step of forming a metal film on the substrate; and the metal film.
- Forming an electrode on a substrate comprising: holding an electrolytic solution containing molecules constituting a molecular assembly in the electrolytic cell; and contacting the two electrodes with the electrolytic solution in contact with the two electrodes.
- a voltage control device for controlling a voltage to be applied comprising: a metal film forming step of forming a metal film on the substrate; A resist layer forming step of forming a resist layer on the metal film deposited in the forming step, and a resist layer formed by the resist layer forming step are desired.
- the interval including Inn! Forming an electrode having a thickness of ⁇ on a substrate, and holding an electrolytic solution containing molecules constituting a molecular assembly in the electrolytic cell, wherein the electrolytic solution and the two electrodes are in contact with each other.
- a voltage control device for controlling a voltage to be applied comprising: a metal film forming step for forming a metal film on the substrate; and A photoresist layer forming step of forming a photoresist layer on the metal film deposited in the forming step; a photosensitive step of exposing the photoresist layer formed in the photoresist layer forming step to a desired pattern; A first development step of developing the photoresist layer exposed by the exposure step; and a first etching step of etching the metal film using the photoresist layer remaining after the first imaging step as a mask.
- an electrode having an interval of 1 ⁇ to 100 ⁇ on the substrate by the step wherein the electrolytic cell holds an electrolytic solution containing molecules constituting a molecular assembly, and the electrolytic solution and the two Contacts Method of manufacturing an electrolytic apparatus for producing a molecular assembly by applying a voltage to the two electrodes while.
- a method for producing a molecular assembly by the method comprising: an electrode adjusting step of setting an interval between the two electrodes to be 1 ⁇ to 100 ⁇ ; and attaching the two electrodes to an electrolytic cell.
- a voltage of 1 nA to 1 mA is applied to the two electrodes, and an electrolysis step is performed in which the potential difference between the two electrodes is 1 OmV to 20 V. Method.
- a molecular assembly containing, as a constituent molecule, an organic conductor composed of an organic compound having a ⁇ -electron system and having a width of 1 ⁇ m to 1 ⁇ and a length of 1 nm to 500 m.
- the constituent molecule means, for example, a phthalocyanine molecule.
- a voltage control device for controlling the electroconductive device using the electrolysis device comprising: A method for manufacturing a wire, wherein the electrolytic cell includes: an electrolytic solution holding unit that holds an electrolytic solution; and a substrate inserting unit into which the substrate is inserted. Of the substrate inserting units, the substrate is inserted into the substrate inserting unit.
- the part that comes into contact with the substrate is covered with an insulator, and the two electrodes are present in the middle of each electrode and are protrusions that are convex parts toward the other electrode, or At the tip of each of the electrodes, a projection is formed by bending the electrode in the direction of the other electrode, and the tips of the projections of the two opposing electrodes face each other in parallel.
- the two electrodes have an insulating portion covered with an insulator, and are provided on the substrate.
- the interval is Inn! A step of connecting the interval of the electronic circuit having a portion of ⁇ with an electrolytic solution containing an organic conductor containing ⁇ electrons; and applying a voltage to the electronic circuit to generate conductive molecules in the interval. Connecting the gaps using an assembly.
- a method for producing an electronic circuit having a connecting portion by a conductive molecular assembly comprising: a step of contacting with an electrolytic solution containing an organic conductor containing: and a step of connecting the intervals by using conductive molecular aggregates generated in the intervals.
- a method for manufacturing an electronic circuit comprising: BRIEF DESCRIPTION OF THE FIGURES
- Figure 1 is a schematic diagram of an electrolysis cell.
- Figures 2 (a) and 2 (b) are schematic diagrams (top views) of the electrolytic cell.
- FIGS. 3 (a), 3 (b) and 3 (c) are schematic diagrams of the electrodes.
- FIGS. 4 (a), 4 (b), and 4 (c) are schematic diagrams of the protrusions (A in FIG. 3, for example).
- FIG. 5 is a diagram illustrating an example of an electrode on a substrate.
- FIG. 5A is a plan view
- FIG. 5B is a cross-sectional view.
- FIG. 6 is a diagram illustrating an example of an electrode on a substrate.
- FIG. 6A is a plan view
- FIG. 6B is a cross-sectional view.
- FIG. 7 is a diagram illustrating an example of an electrode on a substrate.
- FIG. 7A is a plan view
- FIG. 7B is a cross-sectional view.
- FIGS. 8 (a), 8 (b) and 8 (c) are views showing an example of the electronic circuit of the present invention.
- FIG. 9 is a SEM photograph of a molecular assembly in place of the drawing obtained in Example 1-1.
- FIG. 10 is a SEM photograph of a molecular assembly instead of the drawing obtained in Example 1-2.
- FIG. 11 is a SEM photograph of a molecular assembly instead of the drawing obtained in Example 1-3.
- FIG. 12 is a SEM photograph of a molecular assembly replacing the drawing obtained in Example 1-4.
- FIG. 13 is a SEM photograph of a molecular assembly in place of the drawing obtained in Example 15;
- FIG. 14 is a SEM photograph of a molecular assembly instead of the drawing obtained in Examples 1 to 6.
- FIG. 15 is a SEM photograph of a molecular assembly instead of the drawing obtained in Example 17;
- FIG. 16 is an SEM photograph of a molecular assembly in place of the drawing obtained in Example 18-18.
- Figure 16 (a) shows a 80,000-fold SEM photograph and
- Figure 16 (b) shows a 1,100-fold SEM photograph.
- FIG. 17 is a SEM photograph of a molecular assembly instead of the drawing obtained in Example 19-19.
- FIG. 18 is a SEM photograph of a molecular assembly replacing the drawing obtained in Example 2-1.
- FIG. 19 is a SEM photograph of a molecular assembly in place of the drawing obtained in Example 3-1.
- FIG. 20 is a SEM photograph of a molecular assembly instead of the drawing obtained in Example 3-2.
- FIG. 21 is an SEM photograph of a molecular assembly replacing the drawing obtained in Examples 3 to 3.
- FIG. 22 is an SEM photograph of a molecular assembly replacing the drawing obtained in Example 3-4.
- FIG. 23 is a SEM photograph of a molecular assembly replacing the drawing obtained in Example 3-5.
- FIG. 24 is a SEM photograph of a molecular assembly in place of the drawing obtained in Example 4_1.
- BEST MODE FOR CARRYING OUT THE INVENTION FIG. 1 is a schematic diagram of an electrolytic apparatus according to the present invention.
- 1 represents an electrolytic cell
- 2 represents a copper wire
- 3 represents a substrate insertion portion
- 4 represents an electrode
- 5 represents a substrate.
- the electrolysis apparatus of the present invention has two electrodes (4) and an electrolysis cell (1).
- a voltage controller (not shown) for controlling the voltage applied to the two electrodes
- a current controller (not shown) for controlling the current supplied to Z or the two electrodes are provided. It is also desirable.
- the electrolytic cell holds an electrolytic solution containing molecules constituting a molecular assembly, and applies a voltage to the two electrodes while the electrolytic solution is in contact with the two electrodes. (Or supply current To produce a molecular assembly.
- the electrolytic cell includes an electrolytic solution holding section for holding an electrolytic solution (solution), and a substrate insertion section for inserting a substrate.
- an electrolytic solution holding section for holding an electrolytic solution (solution)
- a substrate insertion section for inserting a substrate.
- FIG. 2 (a) it is preferable that, for example, a clay-like insulator is piled up on the substrate insertion portion. This serves to protect the electrodes while holding the substrate. As such an insulator, putty is preferable.
- 2 indicates a copper wire
- 3 indicates a board insertion portion
- 6 indicates an insulator.
- the substrate of the present invention is preferably one on which at least two electrodes can be mounted.
- the material of the substrate include a glass substrate, a silicon substrate, and a plastic substrate. However, the material is not particularly limited as long as it is suitable as a substrate for photolithography and electron beam lithography.
- the shape of the substrate is preferably a rectangular parallelepiped.
- the length of the substrate is preferably from 0.1 mm to 10 cm, more preferably from 1 mm to 5 cm, even more preferably from 1 cm to 4 cm, and particularly preferably from 2 cm to 3 cm.
- the substrate is preferably used after being cleaned so as not to contain impurities.
- the electrode in the present invention is preferably provided on a substrate and includes two electrodes facing each other. As shown in FIGS.
- a part of the two opposing electrodes has an insulating portion covered with an insulator.
- the insulating portion there can be mentioned an insulating portion on the surface of the electrode other than the surface closest to each other as shown in FIGS.5a and 5b. If the electrode has a protruding portion, As shown in FIG. 7 (a) and FIG. 7 (b), a portion other than the projection portion is used as an insulating portion.
- 4 represents an electrode
- 5 represents a substrate
- 15 represents an insulating layer.
- reference numeral 4 denotes an electrode
- 5 denotes a substrate
- 15 denotes an insulating layer
- 16 denotes a gate electrode.
- the gate electrode (16) provided on the substrate (5) is opposed to the gate electrode (16) provided on the insulating layer (15) covering the gate electrode.
- the one including the two electrodes (4) is preferable because it can function as an FET field-effect transistor.
- reference numeral 4 denotes an electrode
- 5 denotes a substrate
- 15 denotes an insulating layer
- 16 denotes a gate electrode.
- Examples of the material of the electrode provided on the substrate include conductive materials such as gold, platinum, copper, and graphite. Of these, gold or platinum is more preferable. There is no particular limitation as long as it is suitable for. It is preferable that at least two electrodes are formed on the substrate.
- the electrolytic cell may be an electrode that plays one of the electrodes. Further, a gate electrode or a reference electrode may be further provided, or an electrode for measuring physical properties of the electrolyte or the like may be further provided.
- the shape of the electrode it is preferable that two electrodes face each other as shown in Fig. 3 (b), and it is located in the middle of each electrode as shown in Fig. 3 (c) and the other electrode There is a protrusion that is a convex part facing the other direction, or a protrusion formed by bending the electrode toward the other electrode at the tip of each of the electrodes as shown in Fig. 3 (a) A.
- An electrode having a portion is preferred. With such a shape, a molecular aggregate such as a conductive nanowire can be effectively generated.
- 4 indicates an electrode
- 11 indicates an interval
- 12 indicates a protrusion.
- the tip of each of the gaps of the two opposing electrodes preferably faces in parallel with each other, as shown in FIG. 4 (a).
- the taper shape becomes closer to the other gap part, and among them, it becomes step-like as shown in Fig. 4 (c).
- the electrode spacing (1 1) is preferably 1 ⁇ to 100 ⁇ , more preferably lnm to l / zm, and lmi! It is more preferable that the length is in the range of 200 nm, but it is not particularly limited as long as it is suitable for the desired length of the nanowire.
- the width of the electrode is preferably 0.5 nm to 1 cm, more preferably 0.5 nm to 200 nm, or 1 to 3 nm.
- the length of the electrode is Inn! ⁇ 25 corrupt is preferred.
- the electrode is immersed in the electrolyte. Is preferred, more preferably 50% or more is soaked, and particularly preferably 80% or more is soaked.
- the voltage applied to the electrodes is controlled by a voltage controller connected to the electrodes. It is more preferable that a reference electrode is provided in the electrolysis cell, the potential difference between the electrodes can be measured, and the voltage applied to the electrode can be controlled according to the measurement result.
- a current control device that controls a current supplied to the electrode together with or instead of the voltage control device may be used.
- the electrodes are preferably formed on a substrate.
- a method of forming an electrode on a substrate include, but are not limited to, a mask evaporation method, a photolithography method, an electron beam lithography method, and a method combining these methods.
- a mask having a shape to be an electrode is cut out over a substrate, and a metal film is deposited thereon. Thereafter, the mask is removed from the substrate. In this way, a metal film is deposited only on the electrode portion, and a microelectrode can be formed.
- a metal film forming step of forming a metal film on a substrate a resist layer forming step of forming a resist layer on the metal film deposited in the metal film forming step, a resist layer forming A photosensitive step of exposing the resist layer formed in the process to a desired pattern, a developing step of developing the exposed resist layer, and an etching step of etching the metal film using the resist layer remaining after the development as a mask.
- the resist for forming the resist layer is not particularly limited as long as it is a so-called photoresist.
- a metal film forming step of forming a metal film on a substrate In making an electrode by one of the electron beam lithography methods, a metal film forming step of forming a metal film on a substrate, a resist layer forming step of forming a resist layer on the metal film deposited in the metal film forming step, a resist layer
- Etching step for etching The resist for forming the resist layer is not particularly limited as long as it is a so-called electron beam resist.
- the production is preferably performed using the above-described electrolytic device.
- a solution electrolytic solution
- a substance to be the molecular assembly molecules constituting the molecular assembly
- an electrolysis method in which a voltage is applied to the electrolytic solution in which a substance to be a molecular assembly is dissolved using the above-mentioned electrode.
- a fine molecular aggregate needlele-shaped crystal or nanowire
- the obtained molecular assembly is also an aggregate of molecules having a closed shell structure. Since the H OMO is packed with two electrons, it is difficult for charge transfer to occur. Conductive and non-conductive molecular aggregates (insulators) I could't help.
- electrolytic crystal growth method electrolytic method of the present invention, electrons are extracted from a part or all of the H OMO of the closed shell molecule, and a part or all of the molecular assembly is SOMQ.
- Examples of the substance that becomes a molecular assembly include an organic conductor, and a compound that forms a conductor by an electrolytic method is more preferable.
- organic conductor examples include organic compounds having ⁇ electrons.
- TTF derivatives including BEDT-TTF derivatives, dmit complexes, porphyrin complexes, and phthalocyanines are preferable.
- TTF derivatives including BEDT-TTF derivatives , Dmit complexes, vorphyrin complexes, and phthalocyanines are preferred, and phthalocyanines and porphyrins are preferred.
- TPP represented by the formula 1 [Co (Pc) (CN) 2 ] is more preferable, and TPP represented by the formula 1 is more preferable.
- [Co (Pc) (CN) 2 ] Tetrafu nylphosphonium disianocobalt (III) phthalocyanine) is preferred.
- phthalocyanines of the formula I compounds having a basic skeleton of a compound represented by the following general formula 2 are preferable.
- porphyrin a compound having a basic skeleton of a compound represented by the following general formula 3 is preferable.
- Solvents for dissolving the substance that forms the formula III molecular assembly include organic solvents, among which acetonitrile, acetone, alcohols, benzene, benzene halide, 1-chloronaphthalene, dimethylsulfoxide, and ⁇ , ⁇ -dimethylformamide, tetrahydrofuran, nitrobenzene, pyridine and the like are preferable, aceto nitrile, acetone, ethanol and methanol are more preferable, and acetone and acetonitrile are further preferable.
- Examples of the ratio of the organic solvent include, but are not particularly limited to, those in which a substance serving as a molecular assembly is saturated.
- the current flowing through the electrode may be a direct current or an alternating current.
- the current applied to the electrode is preferably lnA to lmA, more preferably 100 ⁇ to 10 °.
- the potential difference between the electrodes is preferably 10 mV to 20 V, more preferably 1 V to 5 V, and particularly preferably 2 V to 3 V.
- the frequency is preferably from lmHz to lkHz, and more preferably from 500 mHz to 10 Hz.
- the waveform may be a sine wave, a square wave, a sawtooth wave, or the like, but a sine wave or a square wave is preferable, and a square wave is particularly preferable.
- the amplitude of the alternating current is preferably 10 mV to 20 V, more preferably 1 V to 5 V, and particularly preferably 2.5 V to 5 V.
- the voltage application time is, for example, 10 days or less, preferably from 0.01 second to 10 days, more preferably from 1 second to 2 days. An appropriate time may be set according to the size, type, applied voltage, applied voltage, and the like.
- the temperature of the electrolyte is preferably from -30 ° C to 200 ° C, more preferably from -30 ° C to 120 ° C, and particularly preferably from 15 ° (: to 30 ° C. Those that are not boiling or solidified are preferred. (Molecular assembly)
- Examples of the molecular assembly obtained by the method for producing a molecular assembly according to the present invention include needle-like crystals and conductive nanowires.
- a nanowire refers to a linear substance in which molecules are regularly arranged and have a width of 1 to 1 ⁇ and a length of 2 or more molecules.
- the diameter of the needle-shaped crystal nanowire is from lnm to ⁇ , and more preferably from lnm to 200nm.
- the length of the acicular crystal is, for example, 10 nm to 100 / zm.
- the molecular assembly of the present invention is preferably a ratio (1 / s) of major axis 1 to minor axis s (1 / s) of 1 or more, more preferably 2 or more.
- the obtained molecular assemblies have a diameter of lnm to 100 nm and a length of 10 nm to: % Or more, more preferably 90% or more, even more preferably 95 or more, and particularly preferably 99% or more.
- the molecules constituting the molecular assembly form a molecular assembly in which units arranged regularly in the 1st to 100th rows are repeated, and it is more preferable that the molecule is in the 1st to 50th rows. More preferably, the molecules are in rows 1 to 20, more preferably in the 1, 2, 3, 4, or 5 rows.
- the needle-shaped crystal may be a wire having a certain degree of curvature. Since the oxidation-reduction reaction by electrolysis is used, it is possible to impart conductivity to the small molecule assembly itself. In other words, since it does not have a closed shell structure unlike the conventional micromolecular aggregate, electrons can easily move between the molecules constituting the molecular aggregate, so that it is possible to have high conductivity.
- the conductivity of the molecular assembly is preferably controlled in accordance with the required conductive nanowires, etc., but generally 1 S ⁇ cm ” 1 or more and superconductor or less is preferable. , 1 0 S ⁇ cm- more preferably if one or more superconductor less, 1 0 0 more preferably, if S ⁇ cm- 1 than on superconductors less, superconducting 5 0 0 S ⁇ cm- 1 or more
- the conductivity is preferably 1 X 1 O 100 S ⁇ cm ” 1 or less, or 1 X 10 10 S ⁇ cnf 1 or less. Is selected.
- the shape of the molecular assembly is preferably linear, columnar, cylindrical, or block-shaped, but is not particularly limited as long as the molecules are regularly arranged.
- the molecular aggregate is preferably grown on the substrate, more preferably on the electrode and around the electrode, and particularly preferably between the electrodes, particularly between the gaps.
- the electrolytic cell is preferably left stationary during the growth period.
- the molecular assembly may be used as it is as a conductive nanowire.
- the molecular aggregates may be further bundled to form conductive nanowires, or the molecular aggregates may be subjected to a coupling process, for example, processed for a conductive filler to form conductive nanowires.
- the interval is further increased by Inn! Connecting the gap with an electrolyte containing an organic conductor containing ⁇ electrons; and applying a voltage to the electronic circuit to form a conductive layer generated in the gap.
- a method for manufacturing a functional electronic circuit including the step of connecting the interval using a molecular assembly.
- a method for manufacturing an electronic circuit having a connection portion by a conductive molecular assembly comprising: an electronic circuit having an interval of lnm to: ⁇ and having a portion connected by the conductive molecular assembly,
- a method for producing an electronic circuit comprising: a step of contacting with an electrolytic solution containing an organic conductor containing ⁇ electrons; and a step of connecting the intervals by using a conductive molecular assembly generated in the intervals.
- an electronic circuit having a space as shown in Fig. 8 (a) is manufactured in advance, the circuit is masked, then immersed in an electrolyte (Fig. 8 (b)), and the voltage is applied to the electronic circuit. Apply.
- FIG. 8 (c) conductive molecular aggregates are generated in the space, and the space is connected.
- Fig. 8 (c) By controlling the molecular assembly generated at this time, various characteristics can be imparted to the electronic circuit.
- the electrolytic solution and the electronic circuit are brought into contact with each other, it is preferable to mask portions other than the gaps (particularly, circuit portions of the electronic circuit) so as not to come into direct contact with the electrolytic solution.
- 21 is an electronic circuit
- 22 is an interval
- 23 is a DC / AC power supply
- 25 is an electroconductive solution
- 27 represents a molecular assembly.
- Conductive molecular aggregates that link the gaps in electronic circuits exhibit different physical properties, such as different conductivity, from ordinary electronic circuits.
- a functional electronic circuit is obtained.
- the electronic circuit manufactured by the above manufacturing method can be used as it is as a chip such as an IC.
- Conductive molecular aggregates function as elements such as transistors and tunnel elements Will be done.
- the circuit portion and the conductive molecular assembly have different resistivity. Therefore, by controlling the conductive molecular assembly, an electronic circuit with an appropriate resistance can be obtained.
- the present invention can also be suitably used when the spacing of the electronic circuit is about 1 to 10 molecules.
- the spacing of the electronic circuit is about 1 to 10 molecules.
- only one or two molecules can be used to connect circuits, making a connection device.
- a functional element at a molecular level such as a single electron tunnel element or a single electron transistor, can be manufactured.
- the electrolytic cell shown in FIG. 1 was manufactured using a commercially available reagent bottle. As shown in Fig. 2 (b), the copper wire was connected to the upper part of the electrode with a gold wire. In FIG. 2 (b), 2 represents a copper wire, 7 represents gold, and 8 represents silver paste.
- the conductor part of the reagent bottle was used, and for the substrate insertion part, the cap part of the reagent bottle was modified and used. Putty was put on the board insertion part.
- the diameter of the reagent bottle was 23 mm.
- Electrodes used for the electrolytic molecular assembly growth method were manufactured on a glass plate.
- Electrodes used for the electrolytic molecular assembly growth method were manufactured on a glass plate.
- a 25 x 10 mm glass was prepared and platinum was deposited on a glass substrate.
- a rough mask of the electrode was printed on a 0HP sheet.
- a photoresist agent was spin-coated on a glass substrate on which platinum was deposited.
- the spin coater was rotated at 3000 rpm and spin-coated for 60 seconds.
- the coating was dried at 110 ° C. for 1 minute to form a coating film.
- Photoresist Exposure was performed using a mask aligner of a mercury lamp light source through a glass substrate coated with the agent. Development was performed for 60 seconds using Microposit Developer MF319 (manufactured by Shipley Far East Co., Ltd.). At this time, the unexposed portions were completely dissolved. Then, cleaning was performed using pure water. Thus, an outline of the electrode was created.
- ZEP7000 is used as an electron beam resist on the substrate on which the electrode outline has been created.
- Electron beam drawing was performed on the substrate coated with the electron beam resist. That is, using a Gaussian circular electron beam with an accelerating voltage of 30 kV and an electron beam intensity of 4 ⁇ C ⁇ cm ” 2 and a diameter of 20 nm, the substrate is scanned on the substrate in accordance with the figure data consisting of many dense fine lines, After the exposure, an electron beam resist was developed with ZED500 (manufactured by Zeon Corporation), and an electrode was formed in this manner.
- ZED500 manufactured by Zeon Corporation
- a molecular assembly was obtained in the same manner as in Example 1-1, except that the electrolysis period was set to 100 minutes.
- the molecular assembly thus obtained was in the shape of a plate having a length of 10 ⁇ 111 to 20111 and a length of about 1 ⁇ m to 5 m.
- FIG. 10 shows a SEM photograph of the molecular assembly obtained at this time.
- the molecular assembly obtained in this manner was a block having a length of 6 / ⁇ ⁇ to 10 ⁇ and a width of 2 / zm to 5 / im.
- Figure 11 shows an SEM photograph of the molecular assembly obtained at this time.
- a molecular assembly was obtained in the same manner as in Example 1-1 except that the electrolysis period was set to 193 minutes.
- the molecular assembly thus obtained has a length ⁇ ! It had a columnar shape of ⁇ 50 ⁇ and a width of 500 ⁇ ⁇ 8 ⁇ .
- Figure 12 shows an SEM photograph of the molecular assembly obtained at this time. (Example 11-5)
- a molecular assembly was obtained in the same manner as in Example 1-1, except that the applied voltage was 2.5 V and the electrolysis period was 193 minutes.
- the molecular assembly obtained in this way has a length of 10 ⁇ ! ⁇ 50; um, width 500 ⁇ ⁇ 8 ⁇ .
- Figure 13 shows an SEM photograph of the molecular assembly obtained at this time.
- a molecular assembly was obtained in the same manner as in Example 1-1 except that the applied voltage was 2.5 V and the electrolysis period was 33 minutes.
- the molecular assembly thus obtained was needle-like with a length of 10 ⁇ to 50 ⁇ and a width of 100 nm to 200 nm.
- Figure 14 shows an SEM photograph of the molecular assembly obtained at this time. (Example 11-7)
- a molecular assembly was obtained in the same manner as in Example 1-1, except that the applied voltage was 2.5 V and the electrolysis period was 26 minutes.
- the molecular assembly obtained in this way has a length of 2 ⁇ ! It was a curved wire with a width of ⁇ 10 / m and a width of 200nm ⁇ 300nm.
- Figure 15 shows an SEM photograph of the molecular assembly obtained at this time.
- a molecular assembly was obtained in the same manner as in Example 11 except that the applied voltage was 2.5 V and the electrolysis period was 26 minutes.
- the molecular assembly thus obtained has a length ⁇ ! ⁇ 30 ⁇ , width ⁇ ! Needle shape of ⁇ 300 nm.
- FIG. 16 shows a SEM photograph of the molecular assembly obtained at this time.
- Example 1-9 A molecular assembly was obtained in the same manner as in Example 1-1, except that the applied voltage was 2.5 V and the electrolysis period was 4 minutes.
- the molecular assembly obtained in this way has a length of 5 ⁇ ! Needles were ⁇ 30 / 30 ⁇ , 300 nm ⁇ 3 ⁇ m wide.
- Figure 17 shows an SEM photograph of the molecular assembly obtained at this time.
- nano-spaced electrodes prepared by electron beam lithography were used (Fig. 3a, Fig. 4c), and the procedure was the same as in Example 11 except that the applied voltage was 2.5V and the electrolysis period was 339 minutes. Thus, a molecular assembly was obtained.
- the molecular assembly obtained in this way has a length of 1 ⁇ ⁇ ⁇ 10 ⁇ and a width of 500 ⁇ ! It was a block of ⁇ 3 m.
- Figure 18 shows an SEM photograph of the molecular assembly obtained at this time.
- a molecular assembly was obtained in the same manner as in Example 1-1 except that the alternating current (amplitude: 3.0 V, frequency: 2.0 Hz, square wave) and the electrolysis period were set to 10 seconds.
- the molecular assembly obtained in this way has a length of 30 ⁇ ⁇ 50 ⁇ and a width of 500 ⁇ ! ⁇ ⁇ .
- Fig. 19 shows the S-picture of the molecular assembly obtained at this time.
- Example 3 -A molecular assembly was obtained in the same manner as in 1.
- the molecular assembly thus obtained has a length of 1 II! It was a block with a size of ⁇ 3 ⁇ m and a width of 200-800 nm.
- Fig. 20 shows an SEM photograph of the molecular assembly obtained at this time.
- the molecular assembly obtained in this way has a length 111, width 50 ⁇ ! It was a needle bundle of ⁇ 1 m.
- Figure 21 shows an SEM photograph of the molecular assembly obtained at this time.
- a molecular assembly was obtained in the same manner as in Example 3-1 except that the alternating current (amplitude: 5.0 V, frequency: 0.2 Hz, sine wave) and the electrolysis period were set to 23 minutes.
- the molecular assembly obtained in this way was a needle bundle with a length of l ⁇ m to 3 m and a width of 100 nm to 500 nm.
- Figure 22 shows an SEM photograph of the molecular assembly obtained at this time.
- a molecular assembly was obtained in the same manner as in Example 3-1 except that the alternating current (amplitude: 5.0 V, frequency: 0.1 Hz, square wave) and the electrolysis period were 5 minutes.
- the molecular assembly thus obtained has a length of 10 ⁇ m ⁇ 20 / zm, ⁇ ⁇ 1 ⁇ ! It was needle-shaped of ⁇ 2 m.
- Figure 23 shows an SEM photograph of the molecular assembly obtained at this time.
- the electrode substrate was inserted into the substrate insertion portion, and the electrode substrate was fixed in place using putty.
- a gold wire was passed between the upper part of the electrode and the copper wire of the electrolytic cell, and fixed with silver paste (Fig. 2 (b)).
- a Pasteur pipette a drop of a saturated solution of TPP ⁇ [Co (Pc) (CN) 2 ] in acetonitrile was placed on the substrate so as to cover both electrodes.
- a digital multimeter was connected to the copper wire.
- the molecular assembly thus obtained was needle-like with a length of 10 ⁇ to 50 ⁇ and a width of 200nm to lm.
- Figure 24 shows an SEM photograph of the molecular assembly obtained at this time.
- the molecular assembly of a fine conductive compound can be controlled and manufactured at a molecular level (nano level).
- the electrolytic device and the method for producing a molecular assembly of the present invention it is possible to obtain fine needle-like crystals and nanowires controlled on the order of nanometers.
- the electrolyzer can be manufactured without using a vacuum, the cost can be significantly reduced.
- molecules are self-organized by charge transfer interaction, a molecular assembly / nanowire can be produced without introducing an interactive functional group into the molecule.
- the molecular assembly is grown in a system other than a vacuum such as in a solution, it is possible to avoid a change in physical properties of the molecular assembly when the vacuum is broken.
- the structure of the molecular assembly of the present invention is controlled at the molecular level, and is expected to be applied to various devices.
- the molecular aggregate of the present invention is a molecular aggregate of an organic conductor, it can be applied to a charge control agent, an electron gun, a circuit element, and the like.
- the molecular assembly of the present invention is in a partially oxidized state, for example, when a molecule having SOMO is present, and has high conductivity unlike conventional micromolecular assemblies (such as nanowires). Therefore, it can be used for molecular wiring such as LSI.
- LSI molecular wiring
- a functional element at a molecular level such as a single-electron tunnel element or a single-electron transistor.
- an electronic circuit having a desired function can be easily and simply manufactured at a molecular level, and the function can also be easily controlled.
Description
Claims
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP03744015A EP1496012A4 (en) | 2002-03-08 | 2003-03-07 | DEVICE AND METHOD FOR PRODUCING A CONDUCTIVE NANOTHANE |
US10/506,668 US7351313B2 (en) | 2002-03-08 | 2003-03-07 | Production device and production method for conductive nano-wire |
JP2003574562A JP4691648B2 (ja) | 2002-03-08 | 2003-03-07 | 導電性ナノワイヤーの製造装置および製造方法 |
US11/961,445 US7918982B2 (en) | 2002-03-08 | 2007-12-20 | Production device and production method for conductive nano-wire |
US13/034,122 US20110162968A1 (en) | 2002-03-08 | 2011-02-24 | Production device and production method for conductive nano-wire |
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2002063400 | 2002-03-08 | ||
JP2002-63515 | 2002-03-08 | ||
JP2002063515 | 2002-03-08 | ||
JP2002-63400 | 2002-03-08 |
Related Child Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US10506668 A-371-Of-International | 2003-03-07 | ||
US11/961,445 Division US7918982B2 (en) | 2002-03-08 | 2007-12-20 | Production device and production method for conductive nano-wire |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2003076332A1 true WO2003076332A1 (fr) | 2003-09-18 |
Family
ID=27806945
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2003/002713 WO2003076332A1 (fr) | 2002-03-08 | 2003-03-07 | Dispositif et procede pour la realisation d'un nanofil conducteur |
Country Status (4)
Country | Link |
---|---|
US (3) | US7351313B2 (ja) |
EP (1) | EP1496012A4 (ja) |
JP (3) | JP4691648B2 (ja) |
WO (1) | WO2003076332A1 (ja) |
Cited By (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2005104260A1 (ja) * | 2004-04-20 | 2005-11-03 | Riken | 素子、これを用いた薄膜トランジスタおよびセンサ、ならびに素子の製造方法 |
JP2007000991A (ja) * | 2005-06-27 | 2007-01-11 | National Institute Of Information & Communication Technology | 非導電性ナノワイヤー及びその製造方法 |
JP2007005684A (ja) * | 2005-06-27 | 2007-01-11 | National Institute Of Information & Communication Technology | 導電性ナノワイヤーを用いたトランジスタ |
JP2010045124A (ja) * | 2008-08-11 | 2010-02-25 | National Institute Of Information & Communication Technology | 導電性ナノワイヤによる磁気スイッチング素子 |
WO2010122921A1 (ja) * | 2009-04-23 | 2010-10-28 | Dic株式会社 | フタロシアニンナノワイヤー、それを含有するインキ組成物及び電子素子、並びにフタロシアニンナノワイヤーの製造方法 |
JP2011056617A (ja) * | 2009-09-09 | 2011-03-24 | Japan Science & Technology Agency | 極小ワイヤー状分子集合体及びその製造方法 |
WO2011065133A1 (ja) * | 2009-11-26 | 2011-06-03 | Dic株式会社 | 光電変換素子用材料及び光電変換素子 |
JP2012069946A (ja) * | 2011-09-20 | 2012-04-05 | National Institute Of Information & Communication Technology | 非導電性ナノワイヤー及びその製造方法 |
CN110730760A (zh) * | 2017-03-08 | 2020-01-24 | 耐诺维尔德有限公司 | 提供多个纳米线的装置和方法 |
KR102243520B1 (ko) * | 2019-11-20 | 2021-04-21 | 포항공과대학교 산학협력단 | 신규 프탈로시아닌 나노 와이어 및 이의 용도 |
Families Citing this family (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2003076332A1 (fr) * | 2002-03-08 | 2003-09-18 | Communications Research Laboratory, Independent Administrative Institution | Dispositif et procede pour la realisation d'un nanofil conducteur |
JP4133655B2 (ja) * | 2003-07-02 | 2008-08-13 | 独立行政法人科学技術振興機構 | ナノカーボン材料の製造方法、及び配線構造の製造方法 |
US7181836B2 (en) * | 2003-12-19 | 2007-02-27 | General Electric Company | Method for making an electrode structure |
US7132837B1 (en) * | 2004-08-26 | 2006-11-07 | Arizona Board Of Regents | System and method for measuring conductivity on molecular level |
EP2013611A2 (en) * | 2006-03-15 | 2009-01-14 | The President and Fellows of Harvard College | Nanobioelectronics |
CN100555702C (zh) * | 2006-04-29 | 2009-10-28 | 中国科学院长春应用化学研究所 | 有机半导体晶体薄膜及弱取向外延生长制备方法和应用 |
CA2547183A1 (en) * | 2006-05-17 | 2007-11-17 | Ozomax Inc. | Portable ozone generator for purifying water and use thereof |
WO2008051316A2 (en) * | 2006-06-12 | 2008-05-02 | President And Fellows Of Harvard College | Nanosensors and related technologies |
WO2008147399A1 (en) * | 2006-11-20 | 2008-12-04 | The Regents Of The University Of California | Gated electrodes for electrolysis and electrosynthesis |
US8575663B2 (en) | 2006-11-22 | 2013-11-05 | President And Fellows Of Harvard College | High-sensitivity nanoscale wire sensors |
US7951698B2 (en) * | 2006-12-05 | 2011-05-31 | Electronics And Telecommunications Research Institute | Method of fabricating electronic device using nanowires |
US9297796B2 (en) | 2009-09-24 | 2016-03-29 | President And Fellows Of Harvard College | Bent nanowires and related probing of species |
US9595685B2 (en) | 2011-06-10 | 2017-03-14 | President And Fellows Of Harvard College | Nanoscale wires, nanoscale wire FET devices, and nanotube-electronic hybrid devices for sensing and other applications |
JP5500316B2 (ja) * | 2012-01-30 | 2014-05-21 | 株式会社村田製作所 | 電子部品の製造方法 |
US20220099615A1 (en) * | 2019-01-18 | 2022-03-31 | Universal Sequencing Technology Corporation | Devices, Methods, and Chemical Reagents for Biopolymer Sequencing |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO1993022480A1 (en) * | 1992-04-24 | 1993-11-11 | Isis Innovation Limited | Electrochemical treatment of surfaces |
WO1993025003A1 (en) * | 1992-06-01 | 1993-12-09 | Yale University | Sub-nanoscale electronic systems, devices and processes |
JPH06321686A (ja) | 1993-03-15 | 1994-11-22 | Wako Pure Chem Ind Ltd | 金属原子をドープした炭素クラスター化合物の新規製造法 |
JP2001207288A (ja) * | 2000-01-27 | 2001-07-31 | Canon Inc | 細孔内への電着方法及び構造体 |
US20010018515A1 (en) * | 2000-01-28 | 2001-08-30 | Yoshiaki Kobuke | Poly(porphyrin) having imidazolyl porphyrin metal complex as unit |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61200996A (ja) * | 1985-03-04 | 1986-09-05 | Agency Of Ind Science & Technol | 有機導電体結晶の製造方法 |
US4986886A (en) * | 1990-05-30 | 1991-01-22 | Drexel University | Polymerization of thiophene and its derivatives |
JP2002526354A (ja) * | 1998-09-28 | 2002-08-20 | ザイデックス コーポレイション | Memsデバイスの機能的要素としてのカーボンナノチューブを製造するための方法 |
JP2000284054A (ja) * | 1999-03-31 | 2000-10-13 | Seiko Instruments Inc | 超伝導放射線検出器とその製造方法とそれを用いた装置 |
US6297063B1 (en) * | 1999-10-25 | 2001-10-02 | Agere Systems Guardian Corp. | In-situ nano-interconnected circuit devices and method for making the same |
US6447663B1 (en) * | 2000-08-01 | 2002-09-10 | Ut-Battelle, Llc | Programmable nanometer-scale electrolytic metal deposition and depletion |
US20020061662A1 (en) * | 2000-08-25 | 2002-05-23 | Peter Boggild | Fabrication and application of nano-manipulators with induced growth |
US6755956B2 (en) * | 2000-10-24 | 2004-06-29 | Ut-Battelle, Llc | Catalyst-induced growth of carbon nanotubes on tips of cantilevers and nanowires |
JP3863721B2 (ja) * | 2000-12-07 | 2006-12-27 | 喜萬 中山 | ナノチューブカートリッジの製造方法 |
US6949762B2 (en) * | 2002-01-11 | 2005-09-27 | Xerox Corporation | Polythiophenes and devices thereof |
WO2003076332A1 (fr) * | 2002-03-08 | 2003-09-18 | Communications Research Laboratory, Independent Administrative Institution | Dispositif et procede pour la realisation d'un nanofil conducteur |
US6879143B2 (en) * | 2002-04-16 | 2005-04-12 | Motorola, Inc. | Method of selectively aligning and positioning nanometer-scale components using AC fields |
WO2004015772A1 (en) * | 2002-08-08 | 2004-02-19 | Nanoink, Inc. | Protosubstrates |
-
2003
- 2003-03-07 WO PCT/JP2003/002713 patent/WO2003076332A1/ja active Application Filing
- 2003-03-07 JP JP2003574562A patent/JP4691648B2/ja not_active Expired - Lifetime
- 2003-03-07 US US10/506,668 patent/US7351313B2/en not_active Expired - Fee Related
- 2003-03-07 EP EP03744015A patent/EP1496012A4/en not_active Withdrawn
-
2007
- 2007-12-20 US US11/961,445 patent/US7918982B2/en not_active Expired - Fee Related
-
2008
- 2008-10-03 JP JP2008258472A patent/JP2009079295A/ja active Pending
-
2010
- 2010-12-09 JP JP2010274561A patent/JP5322012B2/ja not_active Expired - Fee Related
-
2011
- 2011-02-24 US US13/034,122 patent/US20110162968A1/en not_active Abandoned
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO1993022480A1 (en) * | 1992-04-24 | 1993-11-11 | Isis Innovation Limited | Electrochemical treatment of surfaces |
WO1993025003A1 (en) * | 1992-06-01 | 1993-12-09 | Yale University | Sub-nanoscale electronic systems, devices and processes |
JPH06321686A (ja) | 1993-03-15 | 1994-11-22 | Wako Pure Chem Ind Ltd | 金属原子をドープした炭素クラスター化合物の新規製造法 |
JP2001207288A (ja) * | 2000-01-27 | 2001-07-31 | Canon Inc | 細孔内への電着方法及び構造体 |
US20010018515A1 (en) * | 2000-01-28 | 2001-08-30 | Yoshiaki Kobuke | Poly(porphyrin) having imidazolyl porphyrin metal complex as unit |
Non-Patent Citations (4)
Title |
---|
"Lectures on Experimental Chemistry 12, Functionality of Substances", MARUZEN, pages: 40 - 45 |
HASEGAWA H. ET AL.: "A highly conducting partially oxideized salt of axially substituted phthalocyanine. Structure and physical properties of TPP(Co(Pc)(CN)2)2(TPP=tetraphenylphosphonium, (Co(Pc)(CN)2)2=dicyano(phthalocyaninato)cobalt (III))", JOURNAL OF MATERIALS CHEMISTRY, vol. 8, no. 7, July 1998 (1998-07-01), pages 1567 - 1570, XP002970070 * |
RUHLMANN L. ET AL.: "A polycationic zinc-5, 15-dichlorooctaethylporphyrinate-viologen Wire", JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, vol. 121, no. 28, 21 July 1999 (1999-07-21), pages 6664 - 6667, XP002970071 * |
See also references of EP1496012A4 |
Cited By (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4878552B2 (ja) * | 2004-04-20 | 2012-02-15 | 独立行政法人理化学研究所 | 素子、これを用いた薄膜トランジスタおよびセンサ、ならびに素子の製造方法 |
WO2005104260A1 (ja) * | 2004-04-20 | 2005-11-03 | Riken | 素子、これを用いた薄膜トランジスタおよびセンサ、ならびに素子の製造方法 |
JP2007000991A (ja) * | 2005-06-27 | 2007-01-11 | National Institute Of Information & Communication Technology | 非導電性ナノワイヤー及びその製造方法 |
JP2007005684A (ja) * | 2005-06-27 | 2007-01-11 | National Institute Of Information & Communication Technology | 導電性ナノワイヤーを用いたトランジスタ |
JP2010045124A (ja) * | 2008-08-11 | 2010-02-25 | National Institute Of Information & Communication Technology | 導電性ナノワイヤによる磁気スイッチング素子 |
WO2010122921A1 (ja) * | 2009-04-23 | 2010-10-28 | Dic株式会社 | フタロシアニンナノワイヤー、それを含有するインキ組成物及び電子素子、並びにフタロシアニンナノワイヤーの製造方法 |
US8470204B2 (en) | 2009-04-23 | 2013-06-25 | Dic Corporation | Phthalocyanine nanowires, ink composition and electronic element each containing same, and method for producing phthalocyanine nanowires |
JP2011056617A (ja) * | 2009-09-09 | 2011-03-24 | Japan Science & Technology Agency | 極小ワイヤー状分子集合体及びその製造方法 |
WO2011065133A1 (ja) * | 2009-11-26 | 2011-06-03 | Dic株式会社 | 光電変換素子用材料及び光電変換素子 |
JP4844701B2 (ja) * | 2009-11-26 | 2011-12-28 | Dic株式会社 | 光電変換素子用材料及び光電変換素子 |
US8629431B2 (en) | 2009-11-26 | 2014-01-14 | Dic Corporation | Material for photoelectric conversion device and photoelectric conversion device |
JP2012069946A (ja) * | 2011-09-20 | 2012-04-05 | National Institute Of Information & Communication Technology | 非導電性ナノワイヤー及びその製造方法 |
CN110730760A (zh) * | 2017-03-08 | 2020-01-24 | 耐诺维尔德有限公司 | 提供多个纳米线的装置和方法 |
CN110730760B (zh) * | 2017-03-08 | 2023-11-21 | 耐诺维尔德有限公司 | 提供多个纳米线的装置和方法 |
KR102243520B1 (ko) * | 2019-11-20 | 2021-04-21 | 포항공과대학교 산학협력단 | 신규 프탈로시아닌 나노 와이어 및 이의 용도 |
Also Published As
Publication number | Publication date |
---|---|
US20050138804A1 (en) | 2005-06-30 |
EP1496012A1 (en) | 2005-01-12 |
EP1496012A4 (en) | 2008-06-18 |
US20110162968A1 (en) | 2011-07-07 |
JP2009079295A (ja) | 2009-04-16 |
JP5322012B2 (ja) | 2013-10-23 |
JPWO2003076332A1 (ja) | 2005-07-07 |
JP2011115942A (ja) | 2011-06-16 |
US7351313B2 (en) | 2008-04-01 |
JP4691648B2 (ja) | 2011-06-01 |
US7918982B2 (en) | 2011-04-05 |
US20080182388A1 (en) | 2008-07-31 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5322012B2 (ja) | 導電性ナノワイヤーの製造方法 | |
JP5153346B2 (ja) | カーボン・ナノチューブを酸化物の表面に選択的に配置する方法 | |
Gubin et al. | Molecular clusters as building blocks for nanoelectronics: the first demonstration of a cluster single-electron tunnelling transistor at room temperature | |
Aliofkhazraei et al. | Graphene science handbook: Fabrication methods | |
WO2004106223A1 (ja) | カーボンナノチューブデバイスおよびその製造方法、並びに、カーボンナノチューブ転写体 | |
Vázquez Sulleiro et al. | Fabrication of devices featuring covalently linked MoS2–graphene heterostructures | |
JP2006342040A (ja) | 筒状分子構造およびその製造方法、並びに前処理基板およびその製造方法 | |
Aswal et al. | Hybrid molecule-on-silicon nanoelectronics: Electrochemical processes for grafting and printing of monolayers | |
US6562633B2 (en) | Assembling arrays of small particles using an atomic force microscope to define ferroelectric domains | |
US7504014B2 (en) | High density interconnections with nanowiring | |
EP3760584A1 (en) | Surface-modified carbon material, and method for producing surface-modified carbon material | |
US10367145B2 (en) | Self-assembly of nanostructures | |
JP5008048B2 (ja) | 導電性ナノワイヤーを用いたトランジスタ | |
KR101358941B1 (ko) | 이온성 액체를 이용한 전도성 탄소나노튜브 및 이를 이용한바이오센서 | |
Kelly et al. | Scanning tunneling microscopy and spectroscopy of dialkyl disulfide fullerenes inserted into alkanethiolate SAMs | |
Hunter et al. | Nanostructured material sensor processing using microfabrication techniques | |
JP5453628B2 (ja) | 非導電性ナノワイヤー及びその製造方法 | |
JPH09129637A (ja) | 微細パターン形成方法 | |
Wang | Investigation of electrical properties of monolayer oxo-functionalized graphene-based two-dimensional materials | |
JP3235120B2 (ja) | 分子配列方法及びその装置 | |
Kisner et al. | In situ fabrication of ultrathin porous alumina and its application for nanopatterning Au nanocrystals on the surface of ion-sensitive field-effect transistors | |
CN116193869A (zh) | 基于片上纳米颗粒结构的自组装单分子层集成芯片 | |
Aldave et al. | All‐Dry Deterministic Transfer of Thin Gold Nanowires for Electrical Connectivity | |
KR100993913B1 (ko) | 원자 힘 현미경 리소그래피를 이용한 금속 나노 패턴의 제조 방법 | |
Li | Nanometer-scale electrochemical synthesis of materials using a scanning tunneling microscope |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
AK | Designated states |
Kind code of ref document: A1 Designated state(s): CN JP KR US |
|
AL | Designated countries for regional patents |
Kind code of ref document: A1 Designated state(s): AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IT LU MC NL PT SE SI SK TR |
|
DFPE | Request for preliminary examination filed prior to expiration of 19th month from priority date (pct application filed before 20040101) | ||
121 | Ep: the epo has been informed by wipo that ep was designated in this application | ||
WWE | Wipo information: entry into national phase |
Ref document number: 2003574562 Country of ref document: JP |
|
WWE | Wipo information: entry into national phase |
Ref document number: 10506668 Country of ref document: US |
|
REEP | Request for entry into the european phase |
Ref document number: 2003744015 Country of ref document: EP |
|
WWE | Wipo information: entry into national phase |
Ref document number: 2003744015 Country of ref document: EP |
|
WWP | Wipo information: published in national office |
Ref document number: 2003744015 Country of ref document: EP |