WO2003075422A1 - Optical transmitter and optical module - Google Patents
Optical transmitter and optical module Download PDFInfo
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- WO2003075422A1 WO2003075422A1 PCT/JP2003/000731 JP0300731W WO03075422A1 WO 2003075422 A1 WO2003075422 A1 WO 2003075422A1 JP 0300731 W JP0300731 W JP 0300731W WO 03075422 A1 WO03075422 A1 WO 03075422A1
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- Prior art keywords
- optical
- modulated
- semiconductor
- electric signal
- light
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- 230000003287 optical effect Effects 0.000 title claims abstract description 313
- 239000004065 semiconductor Substances 0.000 claims abstract description 175
- 230000005540 biological transmission Effects 0.000 claims abstract description 65
- 239000000758 substrate Substances 0.000 claims abstract description 34
- 238000010521 absorption reaction Methods 0.000 claims abstract description 11
- 238000002347 injection Methods 0.000 claims description 45
- 239000007924 injection Substances 0.000 claims description 45
- 238000012544 monitoring process Methods 0.000 claims description 6
- 230000010355 oscillation Effects 0.000 claims description 4
- 230000008878 coupling Effects 0.000 description 16
- 238000010168 coupling process Methods 0.000 description 16
- 238000005859 coupling reaction Methods 0.000 description 16
- 238000010586 diagram Methods 0.000 description 12
- 230000000694 effects Effects 0.000 description 7
- 239000013307 optical fiber Substances 0.000 description 5
- 238000004891 communication Methods 0.000 description 4
- 230000035945 sensitivity Effects 0.000 description 4
- 239000006185 dispersion Substances 0.000 description 3
- 238000011156 evaluation Methods 0.000 description 3
- 239000000835 fiber Substances 0.000 description 3
- 230000006866 deterioration Effects 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 230000003071 parasitic effect Effects 0.000 description 2
- 230000001419 dependent effect Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000005701 quantum confined stark effect Effects 0.000 description 1
- 238000012552 review Methods 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B10/00—Transmission systems employing electromagnetic waves other than radio-waves, e.g. infrared, visible or ultraviolet light, or employing corpuscular radiation, e.g. quantum communication
- H04B10/50—Transmitters
- H04B10/501—Structural aspects
- H04B10/503—Laser transmitters
- H04B10/505—Laser transmitters using external modulation
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/0121—Operation of devices; Circuit arrangements, not otherwise provided for in this subclass
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B10/00—Transmission systems employing electromagnetic waves other than radio-waves, e.g. infrared, visible or ultraviolet light, or employing corpuscular radiation, e.g. quantum communication
- H04B10/50—Transmitters
- H04B10/564—Power control
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/015—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction
- G02F1/0155—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction modulating the optical absorption
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/3011—Impedance
Definitions
- the present invention relates to an optical transmitter and an optical module using an electro-absorption type semiconductor optical modulator device, which are used in an optical communication system.
- FIG. 9 is an explanatory diagram showing the configuration of a conventional optical transmitter.
- Reference numeral 7 denotes an optical module, which is composed of several elements described below.
- 1 is an electroabsorption type semiconductor optical modulator element
- 2 is a transmission line substrate having a high-frequency transmission line 2a and supplying a modulation signal
- 3 is a termination resistor substrate having a resistor 3a and a through hole 3b.
- 4a is an input coupling optical system that outputs the modulated continuous light to the semiconductor optical modulator element 1
- 4b is an output coupling optical system that outputs the modulated light of the semiconductor optical modulator element 1
- 6 is Reference numeral 5 denotes an input electrode on the semiconductor optical modulator element 1
- reference numeral 5 denotes a wire connecting the input electrode 6 to the transmission line substrate 2 and the terminating resistor substrate 3.
- Reference numeral 9 denotes a semiconductor laser module
- reference numeral 8 denotes a variable optical attenuator for adjusting light intensity.
- continuous laser light is incident on the semiconductor optical modulator element 1 from the semiconductor laser module 9 via the input coupling optical system 4a.
- the continuous laser light is modulated by utilizing the characteristic that the absorption amount of the laser light changes according to the modulated electric signal applied through the transmission line substrate 2, and this modulated optical signal is output.
- the light is transmitted from the coupling optical system 4 to the variable optical attenuator 8.
- the light intensity is adjusted by the variable optical attenuator 8. After being reduced, it is output as the optical transmitter output.
- Non-Patent Document 1 Kiyoshi Nagai and Hiroshi Wada, “Oki Technical Review (40 Gb / s EA Modulator), April 2002, Z No. 190, Vol. 69 No. 2 p. . 6 5
- the conventional optical transmitter when constructing an optical communication system, flexibility of the system is required, and a function of variably controlling the light intensity of the optical transmitter is required. As described above, the conventional optical transmitter also realizes the variable function of the light intensity.
- the variable optical attenuator 8 is an essential component when adjusting the intensity of light output to the outside, and the size of the optical transmitter is variable. There was a problem that it depends on the size. Further, even if the variable optical attenuator 8 is mounted on the optical module 7, the size of the optical module 7 itself becomes large, and reducing the size of the optical transmitter does not provide a solution to the Rayleigh problem. Was.
- an object of the present invention is to provide an optical transmitter and an optical module that are compact and have excellent optical transmission characteristics without sacrificing the size of the optical module 7 and the number of components of the optical transmitter. Disclosure of the invention
- An optical transmitter includes: a semiconductor laser module that outputs a modulated continuous light; and an electric field absorption device that performs a modulation process on the modulated continuous light with a modulated electric signal supplied from a transmission path substrate and outputs a modulated optical signal.
- the semiconductor laser module having the light intensity varying means for variably controlling the intensity of the modulated continuous light can variably control the light intensity of the modulated optical signal by the intensity of the modulated continuous light.
- the modulated continuous light is supplied from the transmission line substrate.
- An optical module including an electroabsorption type semiconductor optical modulator element that performs a modulation process with a modulated electric signal and outputs a modulated optical signal.
- a semiconductor laser element for inputting to the optical modulator element, wherein the semiconductor laser element and the semiconductor optical modulator element are monolithically integrated.
- a semiconductor laser device monolithically integrated with a semiconductor optical modulator device oscillates and outputs laser light that is modulated continuous light, and inputs the oscillating output to a semiconductor light modulation device. can do.
- An optical module according to the next invention is characterized in that, in the above invention, a semiconductor integrated driving means for generating the modulated electric signal and outputting the modulated electric signal to the semiconductor optical modulator element is mounted on the transmission path substrate.
- the semiconductor integrated driving means mounted on the transmission path substrate in the optical module can generate a modulated electric signal and output the modulated electric signal to the semiconductor optical modulator element.
- An optical transmitter is an electro-absorption type semiconductor optical modulator element that modulates the modulated continuous light with a modulated electric signal supplied from a transmission line substrate and outputs a modulated optical signal.
- An optical module comprising: a laser light which is a continuous light; an oscillation output; a laser output which is input to the semiconductor optical modulator; and a semiconductor laser monolithically integrated with the semiconductor optical modulator.
- an injection current control means for controlling an injection current value to the semiconductor laser element.
- the injection current control means controls the injection current to the semiconductor laser device, so that the light intensity of the modulated optical signal can be variably controlled.
- An optical transmitter according to the next invention is the optical transmitter according to the invention described above, further comprising a photodiode element for monitoring back light of the semiconductor laser element, wherein the injection current control means uses a monitor output of the photodiode element. It is characterized by controlling the injection current. According to the present invention, the injection current control means can control the injection current using the monitor output of the photodiode element.
- An optical transmitter according to the next invention is characterized in that, in the above invention, a semiconductor integrated drive unit that generates the modulated electric signal and outputs the modulated electric signal to the semiconductor optical modulator element is mounted on the transmission path substrate. .
- the semiconductor integrated driving means mounted on the transmission path substrate can generate a modulated electric signal and output the modulated electric signal to the semiconductor optical modulator device.
- the optical transmitter according to the next invention is characterized in that, in the above invention, a semiconductor integrated drive unit that generates the modulated electric signal and outputs the modulated electric signal to the semiconductor optical modulator element is mounted on the transmission line substrate.
- the semiconductor integrated driving means mounted on the transmission path substrate can generate a modulated electric signal and output the modulated electric signal to the semiconductor optical modulator device.
- the optical transmitter according to the next invention is the optical transmitter according to the above invention, wherein the offset voltage control means for controlling an offset voltage of a modulation electric signal to the semiconductor optical modulator element based on a monitor current value of the photodiode element. It is characterized by having.
- the offset voltage control means can control the offset voltage of the modulated electric signal to the semiconductor optical modulator device based on the monitor current value of the photodiode device.
- FIG. 1 is an explanatory diagram showing a configuration in Embodiment 1
- FIG. 2 is a graph showing a relationship between a light intensity with respect to an injection current to a semiconductor laser element of a semiconductor laser module
- FIG. Fig. 4 is a graph showing the relationship between the received light intensity and the bit error rate characteristics during optical fiber transmission (90 km) and opposition (proximity) when the light intensity is 0 dBm.
- FIG. 5 is a graph showing the evaluation results of the minimum receiving sensitivity and the power penalty when facing each other when the light intensity is changed
- FIG. 5 is an explanatory diagram showing the configuration of the second embodiment
- FIG. FIG. 9 is an explanatory diagram illustrating a configuration of a third embodiment, FIG.
- FIG. 7 is an explanatory diagram showing the configuration of Embodiment 4
- FIG. 8 is an explanatory diagram showing the configuration of Embodiment 5
- FIG. 9 is a diagram illustrating the configuration of a conventional optical transmitter.
- FIG. 1 is an explanatory diagram showing a configuration in the first embodiment.
- the configuration shown in the figure is a configuration in which the variable optical attenuator 8 is removed from the configuration shown in FIG. 9, and the semiconductor laser module 9 is provided with a light intensity variable means 9a.
- Other configurations are the same as those of the conventional optical transmitter shown in FIG. 9, and the same components are denoted by the same reference numerals. Basically, the same parts as the conventional optical transmitter have the same components and perform the same operations.
- the configuration and operation of the first embodiment will be described in detail below, although there are some overlaps with the contents described above.
- an optical module 7 supplies an electric absorption type semiconductor optical modulator element 1 having a quantum confined Stark effect and a Franz-Keldysh effect, and a high-frequency electric signal as a modulation signal to the semiconductor optical modulator element 1.
- a transmission line substrate 2 having a high-frequency transmission line 2 a for performing impedance matching, a resistor 3 a and a through hole 3 b for impedance matching, a termination resistor substrate 3 having a transmission line connecting these, and An input coupling optical system 4a for outputting an optical signal to the semiconductor optical modulator element 1 and an output coupling optical system 4b for receiving the modulated light output from the semiconductor optical modulator element 1 and outputting the same to the outside.
- a wire 5 connects between the transmission line substrate 2 and the input electrode 6 on the semiconductor optical modulator element 1 and between the input electrode 6 and the terminating resistor substrate 3, respectively.
- a semiconductor laser module 9 having a light intensity variable means 9a for generating continuous light as a modulated signal is provided outside the optical module 7, a semiconductor laser module 9 having a light intensity variable means 9a for generating continuous light as a modulated signal is provided.
- the back surface of the terminating resistor substrate 3 is a ground electrode
- the resistor 3 a is a through hole.
- the semiconductor optical modulator element 1 and the resistor 3a are electrically connected in parallel because the semiconductor optical modulator element 1 is electrically connected to this ground electrode via 3b, and the back surface of the semiconductor optical modulator element 1 is also a ground electrode. It is in the state that is being done.
- the semiconductor optical modulator element 1 since the semiconductor optical modulator element 1 has a high impedance, the resistance value of the resistor 3a eventually becomes the internal impedance of the optical module ⁇ . For this reason, the optical module 7 and the transmission line substrate 2 that supplies the high-frequency modulated electric signal are impedance-matched, enabling efficient optical modulation.
- modulated continuous light which is continuous laser light
- a high-frequency electric signal which is a modulation signal
- the semiconductor optical modulator element 1 via the transmission line substrate 2, and the amount of laser light absorbed changes according to the applied voltage.
- the laser light emitted from the emission end face of the semiconductor optical modulator element 1 is subjected to intensity modulation corresponding to the signal voltage of this electric signal, and is coupled to the output coupling optical system 4b, and the optical modulation signal Output to the outside.
- FIG. 2 is a graph showing the relationship between the light intensity and the current injected into the semiconductor laser element of the semiconductor laser module 9.
- the horizontal axis is the injection current (A) and the vertical axis is the light output (w).
- the injection current exceeds a certain threshold, the light output increases almost in proportion to the increase of the injection current. It is going to go.
- the optical module 7 and the optical transmitter a continuous laser output from the semiconductor laser module 9 is varied by changing the injection current to the semiconductor laser element by the light intensity varying means 9 a provided in the semiconductor laser module 9. Since the light intensity of the light can be controlled, the light intensity of the optical transmitter output signal can be continuously varied.
- the quality of the modulated optical signal output from the optical transmitter depends on the incident light intensity dependent characteristic of the semiconductor optical modulator element 1. Deterioration is a concern. Therefore, as a measure of the quality of the modulated optical signal, using a normal dispersion fiber, which is often used for long-distance transmission, The light transmission characteristics and the minimum light receiving sensitivity when facing each other were evaluated.
- the conditions for evaluating the optical transmission characteristics are as follows:
- the modulated electric signal is 10.7 Gbit / s, PN3 one-stage pseudo-random code NRZ (Not Return to Zero) signal, and a 90 km ordinary dispersion fiber is used for the transmission path.
- the total dispersion of this transmission line is about 1620 p nm.
- the light intensity variable means 9 is adjusted so that the light intensity output from the optical module 7 including the electroabsorption type semiconductor optical modulator element 1 becomes O dBm, 13 dBm, 16 dBm, and 19 dBm.
- the light output of the semiconductor laser module 9 was adjusted by a, and this light output was measured using an optical receiver.
- Figures 3 and 4 show the results.
- Fig. 3 is a graph showing the relationship between the received light intensity and the bit error rate characteristics during optical fiber transmission (90 km) and when facing (close) when the light intensity is 0 dBm.
- the received light intensity at the time of optical fiber transmission is the light intensity at the receiving end during the above-mentioned optical fiber transmission
- the received light intensity at the time of facing is the light intensity at the receiving end when no fiber is used.
- a good relationship between the received light intensity and the code error rate is obtained even when there is only a deterioration of up to about 2 dB in the case of optical fiber transmission as compared with the case of facing.
- Fig. 3 shows the evaluation results of the code error rate characteristics when the light intensity is constant
- Fig. 4 shows the evaluation results of the minimum receiving sensitivity and power penalty when facing each other when the light intensity is changed.
- code error rate is the input light intensity of the light receiver when the 10- 12
- Pawa one ⁇ null tee, bit error rate is 10 _
- the difference between the input light intensity to the optical receiver after transmission at 12 and that at the time of opposition is the difference.
- good optical transmission characteristics with a power penalty of 2 dB or less are obtained when the light intensity output from the optical module 7 is in the range of 19 dBm to 0 dBm.
- the light output from the optical module 7 can be reduced without sacrificing the optical transmission characteristics.
- the light intensity of the modulation signal can be variably controlled.
- the variable optical attenuator 8 is removed, and the semiconductor laser module 9 includes the light intensity variable means 9a.
- FIG. 5 is an explanatory diagram showing the configuration of the second embodiment.
- the optical module 7 shown in the figure is an optical modulator integrated in which an electroabsorption type semiconductor optical modulator element 1 and a semiconductor laser element 10 are monolithically integrated in place of the electroabsorption type semiconductor optical modulator element 1.
- the injection current control electrode 16a is provided on the substrate of the optical module 7.
- the semiconductor laser module 9 and the input coupling optical system 4a are removed.
- Other configurations are the same as those of the first embodiment shown in FIG. 1, and the same components are denoted by the same reference numerals.
- an input coupling optical system 4a is required on the incident side in order to efficiently input a continuous laser beam to the semiconductor optical modulator element 1.
- a separate semiconductor laser module 9 including a semiconductor laser element for generating light was required.
- the optical modulator integrated semiconductor laser element 101 by using the optical modulator integrated semiconductor laser element 101, the number of components such as the input coupling optical system 4a on the incident side and the number of assembly steps are reduced.
- the light intensity of the modulated light incident on the semiconductor optical modulator element 1 can be increased.
- an optical transmitter is configured by the optical module 7, the number of components of the optical transmitter can be reduced.
- the laser light that is the modulated continuous light is oscillated.
- variable optical attenuator 8 as shown in the conventional example of FIG. 9 and the semiconductor laser module 9 and input coupling optics shown in FIG. Since the function of variably controlling the intensity of the modulated optical signal output can be realized without the provision of the system 4a, it is possible to obtain an optical module having a further reduced number of component parts and excellent optical transmission characteristics.
- FIG. 6 is an explanatory diagram showing the configuration of the third embodiment.
- the optical module 7 shown in FIG. 1 includes a semiconductor integrated drive circuit 11 that generates an electric signal that is a modulation signal.
- Other configurations are the same as those of the second embodiment shown in FIG. 5, and the same components are denoted by the same reference numerals.
- the electrical length between the semiconductor integrated drive circuit 11 and the electroabsorption type semiconductor optical modulator device 1 can be shortened. If the S22 characteristic, which is the reflection coefficient of the output section of the semiconductor integrated drive circuit 11, and the S11 characteristic, which is the reflection coefficient of the input section of the semiconductor optical modulator element 1, are insufficient, the transmission line substrate 2 is removed. High-frequency electric signals are multiple-reflected between the semiconductor integrated drive circuit 11 and the semiconductor optical modulator device 1 via the semiconductor device, and high-frequency characteristics may be degraded. However, as described above, when the semiconductor integrated drive circuit 11 is mounted in the optical module 7 and the electric length is shortened, the influence of the multiple reflection described above is eliminated on a higher frequency side than a desired frequency band. It is possible. In addition, since a function of variably controlling the light intensity of the optical transmitter can be realized without having the high-frequency characteristics and without including the variable optical attenuator 8, a small-sized optical module having excellent optical transmission characteristics can be obtained.
- the semiconductor integrated driving means for generating the modulated electric signal and outputting the modulated electric signal to the semiconductor optical modulator element 1 is mounted on the transmission line substrate 2, the high frequency of the modulated electric signal is high. It is possible to obtain a compact optical module having excellent characteristics and reduced number of component parts and having excellent optical transmission characteristics.
- FIG. 7 is an explanatory diagram showing the configuration of the fourth embodiment.
- the optical module 7 shown in FIG. 1 includes a photodiode element 12 for detecting the back light of the semiconductor laser element 10, and further detects the semiconductor laser element 10 based on the monitor current value of the photodiode element 12.
- An injection current control circuit 13 for controlling an injection current value, an injection current control electrode 16a, and a monitor electrode 16b are provided.
- Other configurations are the same as those of the third embodiment shown in FIG. 6, and the same components are denoted by the same reference numerals.
- the photodiode element 12 is provided on the back of the optical modulator integrated semiconductor laser element 101, and the modulated optical signal output from the semiconductor optical modulator element 1 includes: Has no effect. Also, the photodiode element 12 detects the back light of the semiconductor laser element 10 which is completely proportional to the light intensity output from the semiconductor laser element 10 to the semiconductor optical modulator element 1, and the detected light current The value is transmitted to the injection current control circuit 13, and the injection current control circuit 13 can control the injection current value to the semiconductor laser device 10. Further, since the semiconductor laser device 10, the injection current control circuit 13 and the photodiode device 12 constitute a feedback control loop, the light intensity of the modulated optical signal output from the optical module 7 is strictly controlled. Can be controlled. Therefore, it is possible to realize a function of strictly and variably controlling the light intensity of the optical transmitter, and it is possible to obtain an optical transmitter having a small size and excellent optical transmission characteristics.
- the injection current value of the semiconductor laser element 10 is controlled based on the current values of the photodiode element 12 and the photodiode element 12 that monitor the optical output of the semiconductor laser element 10.
- the injection current control circuit 13 is applied to the third embodiment, but the injection current control circuit 13 is used without using the photodiode element 12 for monitoring the optical output of the semiconductor laser element 10. It is also possible to control the light intensity of the modulated optical signal output from the optical module 7 only by using the above.
- the injection current value of the semiconductor laser element 10 is determined based on the currents of the photodiode element 12 and the photodiode element 12 for monitoring the optical output of the semiconductor laser element 10.
- injection current control circuit 13 for controlling voltage As described above, the injection current value of the semiconductor laser device 10 is based on the photodiode 12 and the photodiode 12 monitoring the optical output of the semiconductor laser device 10. It is also possible to apply the injection current control circuit 13 for controlling the second embodiment to the second embodiment.
- the injection current value of the semiconductor laser element 10 is controlled based on the current values of the photodiode element 12 and the photodiode element 12 that monitor the optical output of the semiconductor laser element 10. Also, when the injection current control circuit 13 is applied to the second embodiment, the injection current control circuit 13 only monitors the light output of the semiconductor laser element 10 without using the photodiode 12. It is also possible to control the light intensity of the modulated optical signal output from the optical module 7.
- the injection of the semiconductor laser element 10 based on the current values of the photodiode element 12 and the photodiode element 12 for monitoring the optical output of the semiconductor laser element 10 is performed. Since an injection current control circuit 13 for controlling the current value is provided, it is possible to provide a function of strictly variably controlling the light intensity of the modulated optical signal output from the optical module 7, and it is compact and has excellent optical transmission characteristics. Optical transmitter can be obtained.
- FIG. 8 is an explanatory diagram showing the configuration of the fifth embodiment.
- the optical module 7 shown in the figure has an offset voltage control circuit 15 for controlling the offset voltage of the modulated electric signal input to the semiconductor optical modulator element 1 based on the current value of the photodiode element 12 and An offset voltage control electrode 16 c is provided.
- Other configurations are the same as those of the fourth embodiment shown in FIG. 7, and the same components are denoted by the same reference numerals.
- a photocurrent is generated by converting photons into electrons in accordance with the intensity of the modulated light input to the semiconductor optical modulator device 1. Also, in the semiconductor optical modulator element 1, since a layer having a parasitic resistance component exists above the absorption layer that actually absorbs input light, a photocurrent flows through the parasitic resistance portion. This causes a voltage drop. That is, when the modulated light is input to the semiconductor optical modulator element 1, a photocurrent is generated from the absorption layer, and the offset voltage of the effective modulated electric signal applied to the absorption layer is applied to the semiconductor optical modulator element 1. The value is different from the offset voltage of the applied modulated electric signal.
- the difference in the offset voltage changes depending on the light intensity of the modulated light input to the semiconductor optical modulator element 1.
- the optical waveform and optical transmission characteristics of the modulated optical signal output from the semiconductor optical modulator element 1 are as follows.
- the back light of the semiconductor laser device 10 which is completely proportional to the light intensity output from the semiconductor laser device 10 to the semiconductor optical modulator device 1 is monitored by the photodiode device 12. Since the offset voltage of the modulated electric signal to the semiconductor optical modulator element 1 is feedback-controlled by the offset voltage control circuit 15 based on the current value, the modulated optical signal output from the optical module 7 is Various characteristics can have stable characteristics irrespective of the change of the injection current. Therefore, a function of strictly variably controlling the light intensity of the optical transmitter can be realized, and a small-sized optical transmitter and an optical module having stable optical transmission characteristics can be obtained.
- an offset voltage control circuit 15 that monitors the back light of the semiconductor laser element 10 with the photodiode element 12 and controls the offset voltage of the modulated electric signal based on the current value is implemented.
- the offset voltage of the modulated electric signal is converted to the offset voltage control circuit 1 without using the semiconductor integrated driving means for generating the modulated electric signal and outputting it to the semiconductor optical modulator device 1. It is also possible to perform feedback control by 5.
- the back light of the semiconductor laser element 10 is monitored by the photodiode element 12 and the offset voltage of the modulated electric signal is controlled based on the current value. Therefore, the characteristics of the modulated optical signal output from the optical module 7 have stable characteristics irrespective of the change in the injection current. By realizing the function of strictly controlling the light intensity of the optical transmitter, it is possible to obtain a small-sized optical transmitter having stable optical transmission characteristics.
- the semiconductor laser module having the light intensity variable unit controls the light intensity of the modulated optical signal by the intensity of the modulated continuous light. Without providing a variable optical attenuator in part of the output coupling optical system or outside the optical module, it is possible to realize a function to variably control the intensity of the modulated optical signal output, and to achieve compact optical transmission with excellent optical transmission characteristics. This has the effect of producing a vessel.
- the semiconductor laser device monolithically integrated with the semiconductor optical modulator device oscillates and outputs laser light that is modulated continuous light, and outputs the oscillation output. Since the light is input to the semiconductor optical modulator element, there is no variable optical attenuator provided in a part of the output coupling optical system or outside the optical module, and the semiconductor laser module and the input coupling optical system are provided. Without this, it is possible to realize the function of variably controlling the intensity of the modulated optical signal output, and to obtain an optical module having a small power consumption and excellent optical transmission characteristics with further reduced number of components.
- the semiconductor integrated driving means mounted on the transmission path substrate in the optical module generates a modulated electric signal and outputs the modulated electric signal to the semiconductor optical modulator element
- the injection current control means controls the light intensity of the modulated optical signal variably by controlling the injection current to the semiconductor laser element.
- a function of variably controlling the optical intensity of the modulated optical signal output from the optical transmitter can be provided, and an effect that a small-sized optical transmitter having excellent optical transmission characteristics can be obtained is obtained.
- the injection current control means includes a photodiode.
- the light intensity of the modulated optical signal is variably controlled, so that the light of the modulated optical signal output from the optical module is A function for strictly controlling the intensity can be provided, and an effect is obtained that a compact optical transmitter having excellent optical transmission characteristics can be obtained.
- the semiconductor integrated driving means mounted on the transmission line substrate in the optical module generates a modulated electric signal and outputs the modulated electric signal to the semiconductor optical modulator element.
- the semiconductor integrated driving means mounted on the transmission line substrate in the optical module generates a modulated electric signal and outputs the modulated electric signal to the semiconductor optical modulator element.
- the offset control means controls the offset voltage of the modulated electric signal to the semiconductor optical modulator element based on the monitor current of the photodiode element.
- the characteristics of the modulated optical signal output from the optical module are stable irrespective of the change in the injection current, and the function of strictly variably controlling the optical intensity of the optical transmitter is realized. An effect is obtained that an optical transmitter having a small and stable optical transmission characteristic can be obtained.
- the optical transmitter and the optical module according to the present invention are suitable for the fields of high-speed optical communication and long-distance optical communication as optical devices having small and stable optical transmission characteristics.
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Description
Claims
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
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EP03743504A EP1482610A4 (en) | 2002-03-05 | 2003-01-27 | OPTICAL TRANSMITTER AND OPTICAL MODULE |
US10/832,316 US20040197106A1 (en) | 2002-03-05 | 2004-04-27 | Optical transmitter and optical module |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
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JP2002/59405 | 2002-03-05 | ||
JP2002059405A JP2003258367A (ja) | 2002-03-05 | 2002-03-05 | 光送信器および光モジュール |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US10/832,316 Continuation-In-Part US20040197106A1 (en) | 2002-03-05 | 2004-04-27 | Optical transmitter and optical module |
Publications (1)
Publication Number | Publication Date |
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WO2003075422A1 true WO2003075422A1 (en) | 2003-09-12 |
Family
ID=27784745
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2003/000731 WO2003075422A1 (en) | 2002-03-05 | 2003-01-27 | Optical transmitter and optical module |
Country Status (4)
Country | Link |
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US (1) | US20040197106A1 (ja) |
EP (1) | EP1482610A4 (ja) |
JP (1) | JP2003258367A (ja) |
WO (1) | WO2003075422A1 (ja) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP2372936A1 (en) * | 2010-03-29 | 2011-10-05 | Alcatel Lucent | Photonic integrated transmitter |
US20170250755A1 (en) * | 2016-02-29 | 2017-08-31 | Renesas Electronics Corporation | Semiconductor device |
JP6998691B2 (ja) * | 2017-07-19 | 2022-01-18 | 日本ルメンタム株式会社 | 光送信モジュール |
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- 2003-01-27 EP EP03743504A patent/EP1482610A4/en not_active Ceased
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2004
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Also Published As
Publication number | Publication date |
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JP2003258367A (ja) | 2003-09-12 |
EP1482610A1 (en) | 2004-12-01 |
US20040197106A1 (en) | 2004-10-07 |
EP1482610A4 (en) | 2007-01-03 |
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