WO2003069631A3 - Cellule memoire a programmation unique - Google Patents
Cellule memoire a programmation unique Download PDFInfo
- Publication number
- WO2003069631A3 WO2003069631A3 PCT/FR2003/000447 FR0300447W WO03069631A3 WO 2003069631 A3 WO2003069631 A3 WO 2003069631A3 FR 0300447 W FR0300447 W FR 0300447W WO 03069631 A3 WO03069631 A3 WO 03069631A3
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- memory cell
- programmable memory
- time programmable
- supply terminal
- terminal
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
- G11C17/14—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/22—Safety or protection circuits preventing unauthorised or accidental access to memory cells
Abstract
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/504,203 US20050162892A1 (en) | 2002-02-11 | 2003-02-11 | One-time programmable memory cell |
AU2003226880A AU2003226880A1 (en) | 2002-02-11 | 2003-02-11 | One-time programmable memory cell |
EP03739528A EP1476879A2 (fr) | 2002-02-11 | 2003-02-11 | Cellule memoire a programmation unique |
JP2003568666A JP2005518063A (ja) | 2002-02-11 | 2003-02-11 | ワンタイムプログラマブルメモリセル |
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR02/01644 | 2002-02-11 | ||
FR0201644A FR2836749A1 (fr) | 2002-02-11 | 2002-02-11 | Cellule memoire a programmation unique |
FR0213557A FR2836752A1 (fr) | 2002-02-11 | 2002-10-29 | Cellule memoire a programmation unique |
FR02/13557 | 2002-10-29 |
Publications (2)
Publication Number | Publication Date |
---|---|
WO2003069631A2 WO2003069631A2 (fr) | 2003-08-21 |
WO2003069631A3 true WO2003069631A3 (fr) | 2004-08-12 |
Family
ID=27736157
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/FR2003/000447 WO2003069631A2 (fr) | 2002-02-11 | 2003-02-11 | Cellule memoire a programmation unique |
Country Status (6)
Country | Link |
---|---|
US (1) | US20050162892A1 (fr) |
EP (1) | EP1476879A2 (fr) |
JP (1) | JP2005518063A (fr) |
AU (1) | AU2003226880A1 (fr) |
FR (1) | FR2836752A1 (fr) |
WO (1) | WO2003069631A2 (fr) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2835947A1 (fr) * | 2002-02-11 | 2003-08-15 | St Microelectronics Sa | Extraction d'un code binaire a partir de parametres physiques d'un circuit integre |
US7136322B2 (en) * | 2004-08-05 | 2006-11-14 | Analog Devices, Inc. | Programmable semi-fusible link read only memory and method of margin testing same |
FR2875329A1 (fr) | 2004-09-15 | 2006-03-17 | St Microelectronics Sa | Lecture de l'etat d'un element de memorisation non volatile |
US7768815B2 (en) | 2005-08-23 | 2010-08-03 | International Business Machines Corporation | Optoelectronic memory devices |
JP2009506577A (ja) | 2005-08-31 | 2009-02-12 | インターナショナル・ビジネス・マシーンズ・コーポレーション | ランダム・アクセス電気的プログラム可能なeヒューズrom |
FR2929750A1 (fr) * | 2008-04-08 | 2009-10-09 | St Microelectronics Sa | Dispositif securise de memoire du type programmable une fois |
US10698628B2 (en) | 2015-06-09 | 2020-06-30 | Ultrata, Llc | Infinite memory fabric hardware implementation with memory |
CN106997782B (zh) * | 2017-03-27 | 2021-01-29 | 上海华力微电子有限公司 | 一种efuse烧写方法及烧写电路 |
Citations (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3863231A (en) * | 1973-07-23 | 1975-01-28 | Nat Res Dev | Read only memory with annular fuse links |
GB2000407A (en) * | 1977-06-27 | 1979-01-04 | Hughes Aircraft Co | Volatile/non-volatile latch |
US4146902A (en) * | 1975-12-03 | 1979-03-27 | Nippon Telegraph And Telephone Public Corp. | Irreversible semiconductor switching element and semiconductor memory device utilizing the same |
US4399372A (en) * | 1979-12-14 | 1983-08-16 | Nippon Telegraph And Telephone Public Corporation | Integrated circuit having spare parts activated by a high-to-low adjustable resistance device |
US4404581A (en) * | 1980-12-15 | 1983-09-13 | Rockwell International Corporation | ROM With redundant ROM cells employing a highly resistive polysilicon film for programming the cells |
FR2523357A1 (fr) * | 1982-03-15 | 1983-09-16 | Thomson Csf | Matrice d'elements a memoire integres, a double couche de silicium polycristallin de haute resistivite et procede de fabrication |
EP0511560A2 (fr) * | 1991-04-30 | 1992-11-04 | International Business Machines Corporation | Elément de mémoire programmable à basse tension |
EP0666572A1 (fr) * | 1994-01-31 | 1995-08-09 | STMicroelectronics S.A. | Bascule bistable non volatile programmable, à état initial prédéfini, notamment pour circuit de redondance de mémoire |
EP0753859A1 (fr) * | 1995-07-14 | 1997-01-15 | STMicroelectronics S.r.l. | Procédé pour le réglage de la tension de seuil d'une cellule de mémoire de référence |
US5936880A (en) * | 1997-11-13 | 1999-08-10 | Vlsi Technology, Inc. | Bi-layer programmable resistor memory |
US6191989B1 (en) * | 2000-03-07 | 2001-02-20 | International Business Machines Corporation | Current sensing amplifier |
Family Cites Families (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4132904A (en) * | 1977-07-28 | 1979-01-02 | Hughes Aircraft Company | Volatile/non-volatile logic latch circuit |
US4175290A (en) * | 1977-07-28 | 1979-11-20 | Hughes Aircraft Company | Integrated semiconductor memory array having improved logic latch circuitry |
US4476478A (en) * | 1980-04-24 | 1984-10-09 | Tokyo Shibaura Denki Kabushiki Kaisha | Semiconductor read only memory and method of making the same |
US4342102A (en) * | 1980-06-18 | 1982-07-27 | Signetics Corporation | Semiconductor memory array |
JPS5856199B2 (ja) * | 1980-09-25 | 1983-12-13 | 株式会社東芝 | 半導体記憶装置 |
US4449203A (en) * | 1981-02-25 | 1984-05-15 | Motorola, Inc. | Memory with reference voltage generator |
US4583201A (en) * | 1983-09-08 | 1986-04-15 | International Business Machines Corporation | Resistor personalized memory device using a resistive gate fet |
US4837520A (en) * | 1985-03-29 | 1989-06-06 | Honeywell Inc. | Fuse status detection circuit |
US4751677A (en) * | 1986-09-16 | 1988-06-14 | Honeywell Inc. | Differential arrangement magnetic memory cell |
NL8901170A (nl) * | 1989-05-10 | 1990-12-03 | Philips Nv | Geintegreerde schakeling met een signaalniveauconverter. |
US5504760A (en) * | 1991-03-15 | 1996-04-02 | Sandisk Corporation | Mixed data encoding EEPROM system |
JPH08125137A (ja) * | 1994-10-28 | 1996-05-17 | Nec Corp | 半導体記憶装置 |
US5689455A (en) * | 1995-08-31 | 1997-11-18 | Micron Technology, Inc. | Circuit for programming antifuse bits |
KR0174501B1 (ko) * | 1995-12-19 | 1999-04-15 | 김광호 | 아날로그 저장매체의 프로그래밍 장치 |
US5926409A (en) * | 1997-09-05 | 1999-07-20 | Information Storage Devices, Inc. | Method and apparatus for an adaptive ramp amplitude controller in nonvolatile memory application |
GB2338808B (en) * | 1998-06-23 | 2002-02-27 | Mitel Semiconductor Ltd | Semiconductor memories |
US6532568B1 (en) * | 2000-10-30 | 2003-03-11 | Delphi Technologies, Inc. | Apparatus and method for conditioning polysilicon circuit elements |
US6960819B2 (en) * | 2000-12-20 | 2005-11-01 | Broadcom Corporation | System and method for one-time programmed memory through direct-tunneling oxide breakdown |
AU2003283684A1 (en) * | 2002-12-12 | 2004-06-30 | Koninklijke Philips Electronics N.V. | One-time programmable memory device |
US7002829B2 (en) * | 2003-09-30 | 2006-02-21 | Agere Systems Inc. | Apparatus and method for programming a one-time programmable memory device |
-
2002
- 2002-10-29 FR FR0213557A patent/FR2836752A1/fr active Pending
-
2003
- 2003-02-11 AU AU2003226880A patent/AU2003226880A1/en not_active Abandoned
- 2003-02-11 EP EP03739528A patent/EP1476879A2/fr not_active Withdrawn
- 2003-02-11 US US10/504,203 patent/US20050162892A1/en not_active Abandoned
- 2003-02-11 WO PCT/FR2003/000447 patent/WO2003069631A2/fr active Application Filing
- 2003-02-11 JP JP2003568666A patent/JP2005518063A/ja not_active Abandoned
Patent Citations (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3863231A (en) * | 1973-07-23 | 1975-01-28 | Nat Res Dev | Read only memory with annular fuse links |
US4146902A (en) * | 1975-12-03 | 1979-03-27 | Nippon Telegraph And Telephone Public Corp. | Irreversible semiconductor switching element and semiconductor memory device utilizing the same |
GB2000407A (en) * | 1977-06-27 | 1979-01-04 | Hughes Aircraft Co | Volatile/non-volatile latch |
US4399372A (en) * | 1979-12-14 | 1983-08-16 | Nippon Telegraph And Telephone Public Corporation | Integrated circuit having spare parts activated by a high-to-low adjustable resistance device |
US4404581A (en) * | 1980-12-15 | 1983-09-13 | Rockwell International Corporation | ROM With redundant ROM cells employing a highly resistive polysilicon film for programming the cells |
FR2523357A1 (fr) * | 1982-03-15 | 1983-09-16 | Thomson Csf | Matrice d'elements a memoire integres, a double couche de silicium polycristallin de haute resistivite et procede de fabrication |
EP0511560A2 (fr) * | 1991-04-30 | 1992-11-04 | International Business Machines Corporation | Elément de mémoire programmable à basse tension |
EP0666572A1 (fr) * | 1994-01-31 | 1995-08-09 | STMicroelectronics S.A. | Bascule bistable non volatile programmable, à état initial prédéfini, notamment pour circuit de redondance de mémoire |
EP0753859A1 (fr) * | 1995-07-14 | 1997-01-15 | STMicroelectronics S.r.l. | Procédé pour le réglage de la tension de seuil d'une cellule de mémoire de référence |
US5936880A (en) * | 1997-11-13 | 1999-08-10 | Vlsi Technology, Inc. | Bi-layer programmable resistor memory |
US6191989B1 (en) * | 2000-03-07 | 2001-02-20 | International Business Machines Corporation | Current sensing amplifier |
Also Published As
Publication number | Publication date |
---|---|
JP2005518063A (ja) | 2005-06-16 |
EP1476879A2 (fr) | 2004-11-17 |
US20050162892A1 (en) | 2005-07-28 |
FR2836752A1 (fr) | 2003-09-05 |
AU2003226880A1 (en) | 2003-09-04 |
WO2003069631A2 (fr) | 2003-08-21 |
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