WO2003067641A1

WO2003067641A1 - Polishing pad, polishing device, and polishing method

Info

Publication number: WO2003067641A1
Application number: PCT/JP2003/001305
Authority: WO
Inventors: Shunichi Shibuki
Original assignee: Sony Corporation
Priority date: 2002-02-07
Filing date: 2003-02-07
Publication date: 2003-08-14
Also published as: US20070190911A1; JP3843933B2; US20050153633A1; TW200307588A; KR20040079965A; CN100365773C; TWI266673B; JP2003300149A; CN1628374A

Abstract

A polishing pad capable of easily removing polished matter from the surface thereof after polishing, reducing the consumption of polishing fluid used for the polishing, and lowering the production cost thereof, wherein a plurality of elongated holes (11) passing through a first polishing pad (1) in thickness direction are provided in the first polishing pad (1) for polishing the polished matter, the elongated holes (11) are desirably formed so that the lengths thereof in longitudinal direction are 20 mm or shorter and the pitches thereof in lateral direction are less than 100 mm, and small holes (unshown) may be provided in the first polishing pad (1) in addition to the elongated holes (11).

Description

Description ^: Polishing pad, polishing apparatus and polishing method

The present invention relates to a polishing pad, a polishing apparatus, and a polishing method, and more particularly, to a polishing pad provided with a plurality of long holes, a polishing apparatus using the polishing pad, and a polishing method using the polishing pad. Background art

As prior art 1, a polishing pad having a groove on its surface is commercially available. For example, there is a polishing pad IC 1000-A22 manufactured by Mouth Dale Yutta. As shown in FIG. 9, this polishing pad 61 has a polishing pad surface 61S in which grooves 62 each having a width of 2 mm are formed in a lattice pattern at a pitch of about 2 cm. The illustration of the groove 62 is omitted in the plan view.

As prior art 2, there is a commercially available polishing pad provided with a plurality of small holes (for example, small holes having a diameter of 1.8 mm) on the surface. As one example, a polishing pad IC 1000 (p) manufactured by Kuchi Dale Nitta is known.

As prior art 3, as shown in FIG. 10, there is disclosed a polishing pad 71 in which a plurality of holes 72 and a plurality of grooves 73 are provided on the surface 71S. Illustration of 73 is omitted. Japanese Patent No. 3042593 does not describe the hole diameter, but generally a polishing pad in which 3 to 5 holes having a diameter of 1.8 mm are formed at a density of about Zcm ² is often used. Note that, in Japanese Patent No. 3042593, the groove width must be smaller than the hole diameter. In addition, it is described that the groove depth may be about 0.3 mm, and that the groove depth is up to 0.5 mm (for example, see Patent Document 1). In the polishing pad, since the holes are provided, an increase in polishing resistance can be suppressed. Further, the formation of grooves on the surface of the polishing pad reduces the hermeticity between the polishing pad and the semiconductor wafer, thereby making it difficult to generate a negative pressure. For this reason, it is easy to remove the semiconductor wafer from the polishing pad surface after polishing is completed. In addition, the polishing pad of the prior art 3 suppresses a decrease in the strength of the hard layer, thereby reducing the load on the soft layer and reducing deterioration over time, compared to a polishing pad having a normal groove. It has the feature of being.

In addition, chemical mechanical polishing (hereinafter referred to as CMP, which stands for Chemical Mechanical Polishing) is a process used to planarize the surface of an insulating film in the manufacturing process of semiconductor devices, and to form excess copper wiring and tungsten plugs. It is used when removing materials.

Conventionally, a CMP apparatus that has been widely used has a polishing surface of a polishing pad which is flat, and a polishing surface of a wafer and a polishing surface of a polishing pad are arranged in parallel, and the polishing surface is rotated and brought into contact with each other. Polishing is performed (for example, see Patent Document 2).

Further, a belt-type CMP device (for example, see Patent Document 3), (for example, see Patent Document 4), a linear swing type CMP device (for example, see Patent Document 5), a ring-shaped polishing pad For example, a CMP apparatus having the following (for example, see Patent Document 6) and a roller-type CMP apparatus are known (for example, see Patent Document 7). In any of the above polishing apparatuses, the polishing surface of the polishing pad that is in contact with the surface to be polished is planar.

Patent Literature 1 Japanese Patent Application Laid-Open No. Hei 9-1117785 (Page 4, Figure 1, Figure 5) Patent Literature 2 Japanese Patent Application Laid-Open No. 2000-210185 (Pg. 4, FIG. 5) Patent Document 3 Japanese Patent Application Laid-Open No. 2000-21885 (Pg. 4, (Fig. 6) Patent Literature 4 Japanese Patent Laid-Open Publication No. Hei 8-5 2 652 (Pages 5-6, Fig. 1)

Patent Literature 5 Japanese Patent Application Laid-Open No. H8_5262 52 (Page 8, FIG. 10) Patent Literature 6 Japanese Patent Application Laid-Open No. H11-31671 (Page 5, FIG. 1) Patent Literature 7 Japanese Unexamined Patent Publication No. Hei 2 (1995) -1399-172 (Pages 3-5, Fig. 1-3)

However, the polishing pad of the prior art 1 requires a large amount of polishing liquid because the polishing liquid flows out through the groove during polishing. Also, since the grooves are formed by cutting, the manufacturing cost of the polishing pad is higher than that of a polishing pad in which holes are formed by punching.

In the polishing pad according to the prior art 2 described above, a negative pressure is generated between the polishing pad and the object to be polished, so that the polishing resistance increases. Furthermore, it is difficult to remove the object after polishing is completed. A detailed description of this phenomenon is also described in Japanese Patent Application Laid-Open No. Hei 9-111785.

The polishing pad of the prior art 3 requires a manufacturing cost because it requires forming holes by punching and then forming grooves by cutting when manufacturing the polishing pad.

The polishing apparatus and the polishing method using the polishing pad as described in the above conventional technique cannot solve the problem of the polishing pad. Disclosure of the invention

The present invention is a polishing pad, a polishing apparatus, and a polishing method made to solve the above problems. 4. The first polishing pad of the present invention is a polishing pad for polishing an object to be polished, wherein a plurality of long holes penetrating the polishing pad in a thickness direction are provided.

Since the first polishing pad has a plurality of long holes penetrating the polishing pad in the thickness direction, the hermeticity between the surface to be polished and the surface of the polishing pad is reduced, so that a negative pressure hardly occurs. Become. Therefore, it is easy to remove the object to be polished from the polishing pad surface after the polishing is completed. Further, since the long holes formed in the polishing pad of the present invention can be formed by punching, the manufacturing cost is lower than that of a polishing pad having grooves formed by cutting.

The second polishing pad of the present invention is a polishing pad for polishing an object to be polished, wherein a plurality of holes penetrating the polishing pad in a thickness direction are provided, and a part of the plurality of holes is a long hole. It consists of

In the second polishing pad, a plurality of holes penetrating the polishing pad in the thickness direction are formed, and some of the plurality of holes are formed as long holes. Similarly to the above, the long hole reduces the hermeticity between the surface to be polished and the surface of the polishing pad, so that a negative pressure hardly occurs. Therefore, it is easy to remove the object to be polished from the polishing pad surface after the polishing is completed. Further, since a plurality of holes other than the long holes are provided, an increase in polishing resistance is suppressed. Further, since the grooves are not formed unlike the conventional polishing pad, the polishing liquid does not flow out of the polishing pad through the grooves. The long holes formed in the polishing pad of the present invention retain the polishing liquid therein, so that the amount of the polishing liquid to be used can be reduced. Further, since a plurality of holes including long holes formed in the polishing pad of the present invention can be formed by one punching process, the manufacturing cost is lower than that of a polishing pad having a groove formed by cutting. Becomes cheaper. Furthermore, the long hole is in the thickness direction of the polishing pad. The long holes are not lost even when the polishing pad is worn due to the progress of polishing. For this reason, the pad life can be extended as compared with a polishing pad having a groove.

The polishing apparatus of the present invention uses the polishing pad of the present invention, which can reduce the manufacturing cost of the polishing pad. As described above, the use of the polishing pad of the present invention reduces the operating cost of the polishing apparatus. Furthermore, the polishing pad of the present invention has a longer pad life than the conventional polishing pad having grooves, so that the frequency of replacement of the polishing pad is reduced.

The polishing method of the present invention uses the polishing pad of the present invention, which can reduce the production cost of the polishing pad. As described above, the use of the polishing pad of the present invention reduces the polishing cost. Further, since the polishing pad of the present invention has a longer pad life than the conventional polishing pad having grooves, the frequency of replacement of the polishing pad is reduced. BRIEF DESCRIPTION OF THE FIGURES

FIG. 1 is a plan view and a partially enlarged view showing a first embodiment of a first polishing pad of the present invention.

FIG. 2 is a plan view and a partially enlarged view showing the first embodiment of the second polishing pad of the present invention.

FIG. 3 is a plan view showing an embodiment of a long hole formed in the first and second polishing pads of the present invention.

FIG. 4 is a plan view showing an embodiment of a long hole formed in the first and second polishing pads of the present invention.

FIG. 5 is a plan view showing a second embodiment of the first polishing pad of the present invention. FIG. 6 is a plan view and a partially enlarged view showing a second embodiment of the second polishing pad of the present invention.

FIG. 7 is a schematic configuration perspective view showing an embodiment of the first polishing apparatus of the present invention.

FIG. 8 is a schematic configuration perspective view showing an embodiment of the second polishing apparatus of the present invention.

FIG. 9 is a plan view, a partially enlarged view, and a cross-sectional view taken along the line AA ′ showing the polishing pad of Conventional Technique 1.

FIG. 10 is a plan view, a partially enlarged view, and a cross-sectional view taken along the line BB ′ showing the polishing pad of Prior Art 3. BEST MODE FOR CARRYING OUT THE INVENTION

A first embodiment of the first polishing pad of the present invention will be described with reference to a plan view and a partially enlarged view of FIG.

As shown in FIG. 1, the first polishing pad 1 is provided with a plurality of long holes 11 penetrating the first polishing pad 1 in the thickness direction, which are aligned in the row direction and the column direction. is there. The polishing pad 1 is made of, for example, a resin such as foamed polyurethane or urethane. Its thickness is about the same as the thickness of a general polishing pad, for example, about 0.5 mm to 3.0 mm. The long hole 11 fits in the polishing pad 1 and has a length L in the longitudinal direction of 20 mm or more, and the long hole 11 has a length in the short direction (hereinafter referred to as a width) W It is formed with a pitch p that is at least twice as large as less than 100 mm. In addition, the interval d in the longitudinal direction of the long holes 11 is appropriately set, but here, it is set to 10 mm as an example. Further, the elongated holes 11 may be formed so as to be shifted in one or both of the row direction and the column direction. Since the first polishing pad 1 has the plurality of elongated holes 11 penetrating the first polishing pad 1 in the thickness direction, the hermeticity between the surface to be polished and the surface of the polishing pad 1 is improved. Since the pressure is reduced and a negative pressure is less likely to be generated, it is easy to remove the object to be polished from the surface of the polishing pad 1 after the polishing is completed. Further, since the long holes 11 formed in the first polishing pad 1 of the present invention can be formed by punching, the manufacturing cost is lower than that of a polishing pad having grooves formed by cutting. Become. Further, since the elongated hole 11 is formed so as to penetrate in the thickness direction of the first polishing pad 1, the elongated hole 11 does not disappear even if the first polishing pad 1 is worn. For this reason, the pad life can be extended as compared with a conventional polishing pad having a groove.

Next, a first embodiment of the second polishing pad of the present invention will be described with reference to a plan view and a partially enlarged view of FIG. The small holes are not shown in the plan view.

As shown in FIG. 2, the second polishing pad 2 has elongated holes 11 that penetrate the second polishing pad 2 in the thickness direction like the first polishing pad 1, for example, are aligned in the row direction and the column direction. And a plurality of holes (hereinafter, referred to as small holes) 21 having a diameter D of 10 mm or less, preferably 5 mm or less, penetrating the second polishing pad 2 in the thickness direction. . That is, the long hole 11 fits into the polishing pad 1 and has a length L of 20 mm or more, and the long hole 11 has a width of twice or more and less than 100 mm. It is formed with a pitch pi. The distance d between the long holes 11 in the longitudinal direction is appropriately set, but is set to 10 mm here as an example. Further, the elongated holes 11 may be formed so as to be shifted in one or both of the row direction and the column direction.

Further, the small holes 21 are formed of holes having a diameter D = 1.8 mm, for example, and are uniformly arranged in a lattice point at a pitch {2} = ρ2y = 5 mm. The small holes 21 are preferably formed so as not to overlap with the long holes 11. In addition, the arrangement of the small holes 21 is not limited to the lattice point shape, but may be any as long as it is formed on the entire surface of the polishing pad at a predetermined pitch.

In the second polishing pad 2, since a plurality of long holes 11 and small holes 21 penetrating the second polishing pad 2 in the thickness direction are provided, similar to the first polishing pad 1, The long hole 11 reduces the hermeticity between the surface to be polished and the surface of the second polishing pad 2 and makes it difficult to generate a negative pressure. Therefore, it is easy to remove the object to be polished from the surface of the second polishing pad 2 after the polishing is completed. Further, since the polishing liquid is retained inside the long hole 11, the amount of the polishing liquid to be used can be reduced.

Further, since a plurality of small holes 21 are provided in addition to the long holes 11, an increase in polishing resistance can be suppressed. Further, since the grooves are not formed unlike the conventional polishing pad, the polishing liquid does not flow out of the polishing pad through the grooves.

Further, since the long hole 11 and the small hole 21 formed in the second polishing pad 2 of the present invention can be formed by one punching process, the polishing pad having a groove formed by the cutting process Furthermore, since the long hole 11 and the small hole 21 are formed so as to penetrate in the thickness direction of the second polishing pad 2, the polishing proceeds and the second polishing pad Even when 2 is worn, the long holes 11 and small holes 21 are not lost. For this reason, the pad life can be extended as compared with a polishing pad having a groove. Next, using the above-mentioned first and second polishing pads 1 and 2, the probability of occurrence of trouble during transport was investigated by changing the length of the long hole, the width of the long hole, and the pitch in the width direction of the long hole. . The distance d in the longitudinal direction between the long holes 11 shown in FIGS. 1 and 2 was fixed to 10 mm. In each polishing, a silicon oxide solid film formed on the surface of a silicon wafer was used as a polishing object, and the silicon oxide film was coated. It was polished for 1 minute as a polished surface, and it was checked 10 times whether or not the silicon wafer could be transported. Table 1 summarizes the results.

Long hole long hole long hole IC1000 single layer IC1000 single layer 101000 / IC1000 / IC1000 / IC1000 / length width pitch • no small hole • with small hole

(mm) (mm) (mm • Without small hole • With small hole • Without small hole • With small hole

'Long holes are also • long holes and small holes • long holes are both • long holes and small holes

IC1000 only IC1000 only IC1000 / IC1000 /

SUBA400 penetration SUBA400 penetration

10 2 40 0.3 0.8 0.4 1 0.4 1

0.5 10 0 0 0 0 0 0

1 20 0 0 0 0 0 0

100 0 0.2 0 0.3 0 0.4

20 40 0 0 0 0 0 0

2 25 0 0 0 0 0 0

20 0 0 0 0 0 0

10 0 0 0 0 0 0

30 2 0 0 0 0 0 0

40 2 40 0 0 0 0 0 0

50 2 0 0 0 0 0 0

No slot 0.2 0.7 0.2 1 0.1 1

In the above survey, the first and second polishing pads 1 and 2 were made of foamed polyurethane (for example, 1 of 2111111 thickness (1: 100 single-layer product manufactured by Kuchidell) , And a laminate in which the upper layer is made of foamed polyurethane and the lower layer is made of PET (polyethylene terephthalate) (for example, the upper layer is made of Rodell Co., The lower layer used was a stacked polishing pad made of SUBA400 with a thickness of 1.2 mm manufactured by the company.

To bond the first and second polishing pads 1 and 2 to a polishing platen (not shown), a double-sided adhesive tape was used in the case of a single-layer polishing pad. In the above investigation, the first and second polishing pads 1 and 2 were punched to form long holes 11 and small holes 21 in order to prevent the slurry from directly touching the polishing platen. It was adhered to the polishing platen using an adhesive tape. After applying the double-sided adhesive tape to the first and second polishing pads 1 and 2, the first and second polishing pads 1 and 2 are punched together with the double-sided adhesive tape to form a long hole 11 and a small hole 2. If 1 is formed, a double-sided adhesive tape having holes formed therein can be obtained. Even if the long holes 11 and the small holes 21 are formed on the double-sided adhesive tape, the effect of the present invention is not affected.

On the other hand, in the laminated product, one having a hole penetrating only IC100 and one having a hole penetrating both IC100 and SUBA400 were prepared. SUBA400 is bonded with double-sided tape, so if it is formed after punching holes in IC100 before bonding, it can be obtained by punching holes only in IC100. If a hole is formed by the method described above, one having both holes penetrated can be easily manufactured.

A double-sided adhesive tape was used for bonding IC1.00 to SUBA400. At this time, if only the IC 100 is made to pass through the hole, if the punching process is performed before the double-sided adhesive tape is applied to the IC 100, a double-sided adhesive tape without holes can be obtained. If you punch it after pasting JP03 / 01305

12 A double-sided adhesive tape with holes formed is obtained. Regarding the hole of the double-sided adhesive tape, the presence or absence of the hole has no effect on the effect of the present invention. However, this time, since there is no slurry permeation into the lower layer SUB A400, the hole was formed in the double-sided adhesive tape. Those that were not formed were used.

In the case where holes were made to penetrate both the IC1000 and SUBA400, a double-sided adhesive tape was used for adhesion to the polishing platen. If punching is performed before applying the double-sided adhesive tape, a hole is not formed in the double-sided adhesive tape. can get. Regarding the hole of the double-sided adhesive tape, the presence or absence of the hole has no effect on the effect of the present invention.However, in this case, the hole is not formed in the double-sided adhesive tape because the polishing platen has no direct contact with the slurry. The thing was produced and used.

From Table 1 above, in the case of the first polishing pad 1 made of a single-layer product of IC100, when the long hole 11 having a length of 20 mm or more was formed, the wafer transfer error was 0. . However, in the case of the second polishing pad 2 in which the small holes 21 were formed together with the long holes 11, a transport error occurred when the pitch p of the long holes 11 was 100 mm or more.

It also consists of a laminate of IC100 and SUBA400.

In the first polishing pad 1 in which the long hole 11 was formed only in C1000, the wafer transfer error was 0 when the long hole 11 having a length of 20 mm or more was formed. However, in the case of the second polishing pad 2 in which the small holes 21 were formed together with the long holes 11, a transport error occurred when the pitch p of the long holes 11 was 100 mm or more.

Further, in the first polishing pad 1 formed of a laminated product of IC1000 and SUBA400, and formed with a long hole 11 penetrating IC100 and SUBA400, the long polishing When a long hole 11 of 20 mm or more is formed, ゥ The transport error of 八 8 was 0. However, in the case of the second polishing pad 2 in which the small holes 21 were formed together with the long holes 11, a transport error occurred when the pitch p of the long holes 11 was 100 mm or more.

The bottom row of Table 1 shows, as a comparative example, the results obtained with a polishing pad in which the long holes 11 were not formed. As a result, a wafer transport error occurred regardless of the polishing pad configuration, regardless of whether the product was a single-layer product or a laminate product, and whether or not there were small holes. This indicates that the long hole 11 is effective for preventing a wafer transfer error.

Therefore, it was found that the long hole 11 needs to have a length of 2 O mm or more. Further, it was found that the pitch p in the width direction of the long holes had to be less than 100 mm. In addition, the lower limit of the width of the long hole 11 is set to be at least twice the width of the long hole 11 in consideration of the rigidity of the polishing pad between the long holes 11.

Next, an embodiment of a long hole formed in the first and second polishing pads of the present invention will be described with reference to a plan view of FIG.

As shown in FIG. 3, elongated holes 11 may be formed in the first polishing pad 1 (second polishing pad 2) so as to be radially arranged. Although the drawing shows one elongated hole 11 formed in the radial direction, a plurality of elongated holes may be formed in the radial direction. Although the illustration of the small holes 21 is omitted in FIG. 3, the small holes 21 may be formed as described with reference to FIG. The arrangement of the small holes 21 is not limited to the lattice point shape, but may be any as long as it is formed on the entire surface of the polishing pad at a predetermined pitch.

In the polishing pad having the above configuration, the length of the long hole 11 is set to be sufficiently longer than, for example, the radius of the object to be polished (for example, a wafer), and is arranged radially so that a negative pressure on the wafer is less likely to be generated. can do. One of the advantages of the present configuration is that by forming such a long hole 11 by punching, it can be formed into a relatively free shape as compared with a groove. 03 01305

14 Next, an embodiment of a long hole formed in the first and second polishing pads of the present invention will be described with reference to a plan view of FIG.

As shown in FIG. 4, the first polishing pad 1 (the second polishing pad 2) may be formed with, for example, arc-shaped long holes 11 arranged in a circle. Although the drawings show the case where two rows of elongated holes 11 are formed concentrically, they may be formed in three or more rows. Although the illustration of the small holes 21 is omitted in FIG. 4, the small holes 21 may be formed as described in FIG. The arrangement of the small holes 21 is not limited to the lattice point shape, but may be any as long as it is formed at a predetermined pitch on the entire surface of the polishing pad.

In the polishing pad having the above configuration, for example,

(E.g., a wafer) is sufficiently larger than the radius of the wafer, and by forming the long holes 11 in an arc shape, it is possible to make a structure in which negative pressure on the wafer is less likely to occur, and in a parallel or radial arrangement. As compared with the method, the retention of slurry is improved, so that the amount of slurry used can be reduced. One of the advantages of this configuration is that by forming the long hole 11 and the small hole 21 by punching as described above, it can be formed into a relatively free shape as compared with the groove.

Next, a second embodiment of the first polishing pad of the present invention will be described with reference to the plan view of FIG. FIG. 5 shows a square polishing pad as used in a belt type polishing apparatus. The small holes are not shown in the plan view.

As shown in FIG. 5, the polishing pad 5 is provided with a plurality of elongated holes 11 penetrating the polishing pad 5 in the thickness direction, aligned in the row direction and the column direction. The polishing pad 5 is made of, for example, a resin such as urethane foam or urethane. The thickness of the polishing pad is substantially the same as that of a general polishing pad, and is, for example, about 0.5 mm to 3.0 mm. The slot 11 fits into the polishing pad 5 and has a length L in the longitudinal direction of 2 130S

Fifteen

0 mm or more, and the long holes 11 are formed at a pitch p that is twice or more and less than 100 mm of a length (hereinafter, referred to as a width) W in a short side direction. The distance d in the longitudinal direction of the holes 11 is set as appropriate, but is set to 10 mm here as an example. Further, the elongated holes 11 may be formed so as to be shifted in one or both of the row direction and the column direction.

Next, a second embodiment of the second polishing pad of the present invention will be described with reference to a plan view and a partially enlarged view of FIG. The small holes are not shown in the plan view. The reference numerals used in the following description are the same as those used in FIG. 2 and FIG.

As shown in FIG. 6, a polishing pad 6 according to the second embodiment has a polishing pad 5 described with reference to FIG. 5 and a small hole 21 similar to that described with reference to FIG. It is. That is, the elongated holes 11 penetrating the polishing pad 6 in the thickness direction are formed, for example, aligned in the row direction and the column direction, and penetrate the polishing pad 6 in the thickness direction, and have a diameter D of 10 mm. Hereinafter, a plurality of small holes 21 preferably having a size of 5 mm or less are provided. That is, the long hole 11 fits in the polishing pad 6 and has a length L of 2 O mm or more, and the long hole 11 has a width of 2 times or more and less than 10 O mm. It is formed with a pitch p1. The length d of the elongated holes 11 in the longitudinal direction is appropriately set, but is set to 1 Omm as an example here. Further, the long holes 11 may be formed so as to be shifted in one or both of the row direction and the column direction.

Further, the small holes 21 are constituted by holes having a diameter D = 1.8 mm, for example, and are uniformly arranged at lattice points P2x = p2y = 5 mm. The small holes 21 are preferably formed so as not to overlap with the long holes 11. Further, the arrangement of the small holes 21 is not limited to the lattice point shape. It is sufficient that the small holes 21 are formed on the entire surface of the polishing pad at a predetermined pitch. JP03 / 01305

16 In the above configuration, the long holes 11 are formed in parallel with the belt driving direction. However, the arrangement direction of the long holes 11 may be oblique to the belt driving direction, and It may be.

In the above-described embodiment, it has been described that the long hole 11 and the small hole 21 are formed by a single punching process. However, the long hole 11 and the small hole 21 are independently formed. It may be formed by punching. As a case where the production of the polishing pad is facilitated by this method, for example, there is a case where it is desired to make the width of the long hole 11 wider than the pitch of the small hole 21. Specifically, as an example, there may be a case where the pitch of the small holes 21 is 5 mm and a long hole 11 of 7 mm width is desired to be formed. Alternatively, there may be a portion where the long hole 11 overlaps the small hole 21. Specifically, there are cases where the small holes 21 are arranged in a lattice point shape and the long holes 11 are arranged in a radial or arc shape.

When a window for optical end point detection is formed in the polishing pad, it is advantageous that no hole is formed in the window because it does not block light incident on the wafer, but a hole is formed in the window. Even so, the effectiveness of the present invention does not change.

In the above embodiment, IC 100 is used as an example of the polishing pad. However, regardless of the material of the polishing pad, such as a commercially available polishing pad made of a nonwoven fabric, a suede-shaped polishing pad, and a polishing pad made of a resin material. Thus, the same effects as described above can be obtained. Further, even if the polishing pad contains fixed abrasive grains, the effect of the present invention is not changed, and the same effects as described above can be obtained.

Next, the polishing apparatus of the present invention will be described with reference to the schematic configuration perspective views shown in FIGS. 7 and 8.

The first polishing apparatus includes one of the polishing pads 1 to 4, wherein the polishing pad comes into contact with the surface to be polished of the material to be polished and polishes the surface to be polished by performing relative frictional movement. It is. That is, as shown in FIG. 7, the first polishing apparatus 101 is provided with a polishing platen 11 which is rotatable, for example, in a direction indicated by an arrow a. The polishing platen 111 is rotated via a rotating shaft 112 connected to a rotation driving device (not shown). Further, on the polishing platen 111, one of the polishing pads 1 to 4 described with reference to FIGS. 1 to 4 is mounted. Here, the polishing pad 1 was attached. Hereinafter, the polishing pad 1 will be described. The mounting method is based on a general polishing pad mounting method, for example, a method using an adhesive sheet (including an adhesive tape) or an adhesive. Specifically, the method described above is used.

A polishing head 115 is provided so as to face a position facing the polishing platen 111 on which the polishing pad 1 is mounted, usually a position where the rotation center of the polishing platen 111 is removed. ing. The polishing head 1 15 is configured to be able to move up and down freely. Further, the polishing head 115 is rotated, for example, in a direction indicated by an arrow A via a rotary shaft 116 connected to a rotation driving device (not shown). The surface of the polishing head 1 15 facing the polishing platen 11 1 is designed to be mounted with the object to be polished 301. Various methods such as vacuum suction, electrostatic suction, adhesion using an adhesive, and adhesion using an adhesive sheet can be adopted as a method of mounting the object to be polished. Further, a nozzle 1 2 1 for supplying a polishing slurry 13 1 (indicated by an arrow for convenience) on the polishing pad 1 is provided above the polishing platen 1 1 1 and in the vicinity of the polishing head 1 15. Provided. The polishing slurry 131 is supplied so as to enter between the polishing pad 1 and the object 301 as the polishing platen 111 rotates.

The first polishing method of the present invention will be described below. As an example, a method of performing polishing using the first polishing apparatus 101 will be described. First, a desired polishing pad among the polishing pads 1 to 4 is mounted on the polishing platen 111. An object to be polished 301 is mounted on the polishing head 115. Then, nozzle 1 2 1 The polishing slurry 1 3 1 is supplied onto the polishing pad 1 and the polishing table 1 1 1 is rotated. The polishing head 1 15 is also rotated. Then, the object to be polished 301 is brought into contact with the polishing pad 1 so as to obtain a desired processing pressure, and the surface to be polished of the object to be polished 301 is polished. As an example of the polishing conditions, for example, a polishing slurry of potassium hydroxide (KOH) based fumed silica-based slurry is used as the polishing slurry 13, the processing pressure is 300 gZcm ² , and the number of rotations is an object to be polished (eg, a wafer). The peripheral speed of the polishing pad was set to 6 OmZ min. After the polishing is completed, the object to be polished 301 is separated from the polishing pad 1, the supply of the polishing slurry 13 1 is stopped, and the polishing platen 1 1 1 and the polishing head 1 15 are turned. Stop motion. After that, the object to be polished 301 may be removed from the polishing head 115. Note that the surface to be polished of the object to be polished 301 may be washed before the desorption.

The second polishing apparatus includes a belt provided with one of the polishing pads 5 to 6, which is configured to contact the surface to be polished of the material to be polished with the polishing pad and perform the relative frictional movement to polish the surface to be polished. It is a polishing device of the type.

That is, as shown in FIG. 8, the second polishing apparatus 201 includes rotatable rollers 211, 212 disposed in parallel with each other. 12 is provided with a belt-type polishing pad 5 or 6 described with reference to FIG. 5 or FIG. Here, the polishing pad 5 was used as an example. Hereinafter, the polishing pad 5 will be described. The polishing pad 5 is stretched so as not to be bent by the mouthpieces 2 1 1 and 2 1 2. Also, between the rollers 2 1 1 and 2 12, the polishing pad is bent inward. It is preferable to provide a guide (not shown) that slides the polishing pad so that the polishing pad can slide in the direction of the polishing head 215 from the inside. Also, at least one of the above rollers 211 and 212 One of them is rotated in the direction of an arrow force, for example, by a rotation driving device. This causes the polishing pad 4 to rotate in the direction indicated by the arrow.

A polishing head 215 is provided so as to face the polishing surface of the polishing pad 5. The polishing head 2 15 is configured to be vertically movable. Further, the polishing head 215 is rotated via a rotation shaft 216 connected to a rotation driving device (not shown). The surface of the polishing head 2 15 facing the polishing pad 5 is adapted to be mounted with the object 301 to be polished. Various methods, such as electrostatic adsorption, bonding using an adhesive, and bonding using an adhesive sheet, can be employed. Further, a nozzle 2 21 for supplying a polishing slurry 23 1 (indicated by an arrow for convenience) on the polishing pad 5 is provided above the polishing pad 5 and near the polishing head 2 15. ing. Then, the polishing slurry 231 is supplied so as to enter between the polishing pad 5 and the object to be polished 301 with the rotation of the openings 211 and 212.

The second polishing method of the present invention will be described below. As an example, a method of performing polishing using the second polishing apparatus 201 will be described. First, a desired polishing pad is selected from the polishing pads 5 and 6. Here, a polishing pad 5 was used. Therefore, in the following description, the polishing pad 5 will be described. An object to be polished 301 is mounted on the polishing head 215. Thereafter, the polishing slurry 2 3 1 is supplied from the nozzle 2 2 1 onto the polishing pad 5 and the polishing pad 5 is rotated by rotating the rollers 2 1 1 and 2 12. The grinding head 2 15 is also rotated. Then, the object to be polished 301 is brought into contact with the polishing pad 5 so that a desired processing pressure is obtained. The surface to be polished of the object to be polished 301 is polished. As an example of the polishing conditions, for example, a polished slurry based on potassium hydroxide (KOH) is used as the polishing slurry 231, the processing pressure is 300 g Z cm ² , and the number of rotations is set to the object to be polished. (For example, 8) The peripheral speed of the polishing pad with respect to was set to be 6 Om / min. After the polishing is completed, the object to be polished 301 is separated from the polishing pad 5. The supply of the polishing slurry 2 3 1 is stopped, and the polishing pad 5 (opening 2 1 1, 2 1 2) and polishing are stopped. Stop rotation of head 2 15. Then, the object to be polished 301 may be removed from the polishing head 215. Note that the surface to be polished of the object to be polished 301 may be washed before the desorption.

The above-described polishing method is an example, and the polishing conditions can be appropriately changed depending on the object to be polished. Conventional polishing conditions can also be used.

As described above, according to the first polishing pad of the present invention, since a plurality of long holes penetrating the polishing pad in the thickness direction are provided, the sealing between the surface to be polished and the surface of the polishing pad is provided. The negative pressure can be hardly generated by lowering the performance. Therefore, the object to be polished can be easily removed from the polishing pad surface after the polishing is completed. In addition, since the long holes can be formed by punching, the manufacturing cost is lower than that of a conventional polishing pad using a polishing pad having a groove formed by conventional cutting. Furthermore, since the long holes are formed so as to penetrate in the thickness direction of the polishing pad, the long holes do not disappear even if the polishing pad is worn, so that the pad life is extended longer than the polishing pad having grooves. Can be.

According to the second polishing pad of the present invention, a plurality of holes penetrating the polishing pad in the thickness direction are provided, and some of the plurality of holes are formed as long holes. 1 The same effect as the polishing pad can be obtained. Further, since a plurality of holes other than the long holes are provided, an increase in polishing resistance can be suppressed. Further, since the polishing liquid can be retained in the elongated holes, the amount of the polishing liquid can be reduced as compared with a polishing pad having a conventional groove. Also, multiple holes including long holes can be formed by one punching process. Therefore, the manufacturing cost is lower than using a conventional polishing pad having grooves formed by cutting. Furthermore, since the long holes are formed so as to penetrate in the thickness direction of the polishing pad, the long holes do not disappear even if the polishing pad is worn, so that the pad life is extended more than the polishing pad having the groove. I can do it.

According to the polishing apparatus of the present invention, the manufacturing cost of the polishing pad can be reduced. Since the polishing pad of the present invention is mounted, the operating cost of the polishing apparatus can be reduced. Further, since the polishing pad of the present invention has a longer pad life than a conventional polishing pad having grooves, the frequency of replacement of the polishing pad can be reduced. As a result, the operating cost of the polishing apparatus can be reduced. At the same time, the effects of the polishing pad of the present invention can be obtained.

Since the polishing method of the present invention uses the polishing pad of the present invention, which can reduce the production cost of the polishing pad, the polishing cost can be reduced. Further, since the polishing pad of the present invention has a longer pad life than the conventional polishing pad having grooves, the frequency of replacement of the polishing pad can be reduced. As a result, polishing costs can be reduced. At the same time, the function and effect of the polishing pad of the present invention can be obtained.

Claims

The scope of the claims

1. A polishing pad for polishing an object to be polished, wherein a plurality of long holes penetrating the polishing pad in a thickness direction are provided.

2. The polishing according to claim 1, wherein the long hole is formed so as to fit in the polishing pad, and the length of the long hole in the longitudinal direction is 20 mm or more. pad.

3. The pitch of the long hole in the short direction is formed to be twice or more and less than 100 mm of the length of the long hole in the short direction.

The polishing pad according to item 1.

4. A polishing pad for polishing an object to be polished, wherein a plurality of holes penetrating the polishing pad in a thickness direction are provided, and a part of the plurality of holes is formed of a long hole. Polishing pad.

5. The polishing according to claim 4, wherein the long hole is formed so as to fit in the polishing pad, and the length of the long hole in the longitudinal direction is 20 mm or more. pad.

6. The pitch according to claim 4, wherein the pitch in the short direction of the long hole is formed to be twice or more and less than 100 mm of the length in the short direction of the long hole. Polishing pad.

7. A polishing apparatus for polishing a surface to be polished by bringing the polishing pad into contact with the surface to be polished of the material to be polished and performing relative frictional movement, wherein the polishing pad comprises: A polishing apparatus characterized by having a long hole.

8. The polishing according to claim 7, wherein the long hole is formed so as to fit in the polishing pad, and the length of the long hole in the longitudinal direction is 20 mm or more. apparatus.

9. The pitch according to claim 7, wherein the pitch of the long holes in the short direction is formed to be twice or more and less than 100 mm of the length of the long holes in the short direction. Polishing equipment.

10. The polishing pad contacts the surface to be polished of the material to be polished,

In a polishing apparatus for polishing a surface to be polished by relatively frictional movement,

The polishing pad is provided with a plurality of holes penetrating the polishing pad in a thickness direction, and a part of the plurality of holes is a long hole.

A polishing apparatus characterized in that:

11. The eleventh aspect of the present invention, wherein the long hole is formed so as to fit in the polishing pad, and the length of the long hole in the longitudinal direction is 20 mm or more. The polishing apparatus according to any one of the preceding claims.

12. The pitch in the short direction of the long hole is formed to be twice or more and less than 100 mm of the length in the short direction of the long hole. The polishing apparatus according to the above.

1 3. The polishing pad comes into contact with the surface to be polished

In a polishing method for polishing a surface to be polished by relatively frictional movement between the surface to be polished and a polishing pad,

The polishing pad is provided with a plurality of long holes penetrating the polishing pad in a thickness direction.

A polishing method characterized by the fact that:

14. The polishing method according to claim 13, wherein the long hole is formed so as to fit in the polishing pad, and the length of the long hole in the longitudinal direction is 20 mm or more. Method.

15. The polishing method according to claim 13, wherein a pitch in the short direction of the long hole is formed to be twice or more and less than 100 mm of a length in the short direction of the long hole.

16. The polishing pad comes into contact with the surface to be polished

A polishing method characterized by the above-mentioned.

17. The polishing method according to claim 16, wherein the long hole is formed so as to fit in the polishing pad, and has a length in the longitudinal direction of the long hole of 20 mm or more. Method.

18. The polishing method according to claim 16, wherein the pitch of the long holes in the short direction is formed to be at least twice the length of the long holes in the short direction and less than 100 mm.