JP2004216503A - Device and method for polishing - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To attach a polishing pad to a rotating body such as a drum not to remain air bubbles. <P>SOLUTION: A plurality of through-holes 34a passed through a drum wall 21 of a polishing drum 20 are provided as air discharging passages 34. When the adhesive sheet side of the polishing pad is press-pasted on the circumferential surface 20a of the polishing drum 20, air bitten in is released from the drum wall outer circumferential surface 21a side of the through-holes 34a to a drum wall inner circumferential surface 21b side. As a result, the polishing pad is pasted without remaining air bubbles. The through-holes may be provided in the polishing pad. <P>COPYRIGHT: (C)2004,JPO&NCIPI

Description

[0001]
TECHNICAL FIELD OF THE INVENTION
The present invention relates to a wafer polishing technique, and more particularly, to a technique effective when applied to edge polishing of a wafer.
[0002]
[Prior art]
The technology described below has been studied by the inventor when researching and completing the present invention, and the outline thereof is as follows.
[0003]
A wafer formed by slicing a single crystal ingot into a disk shape is formed as a semiconductor device by writing a large number of fine electric circuits on its surface.
[0004]
A wafer formed by slicing an ingot is called an as-cut wafer, and an outer peripheral portion (hereinafter, sometimes referred to as an edge portion) of the ingot remains rough as it is when cut out. I have. Such a fine convex portion of the edge portion is very easily chipped, and is easily broken even if it is lightly hit.
[0005]
For this reason, if the wafer is supplied to a subsequent process while the edge portion is kept in a rough state, for example, when a circuit is formed by performing precision processing on the wafer surface, the uneven portion of the edge portion is missing during the process. As a result, a serious obstacle of contaminating the wafer surface is caused.
[0006]
Therefore, the edge of the wafer is chamfered and mirror-polished so as not to cause such contamination. In the chamfering, the edge of the as-cut wafer is polished with a diamond grindstone or the like into an arc shape or the like.
[0007]
After the end of the chamfering, the edge portion is mirror-polished in an edge polishing step. The mirror polishing is performed by, for example, bringing the rotating wafer into contact with a polishing pad provided on the surface of a rotating body formed in a drum shape while rotating the polishing pad. Slurry is supplied to the contact position between the polishing pad and the edge portion, and mirror polishing is performed with fine abrasive grains contained in the slurry.
[0008]
The polishing pad is composed of a polishing member and an adhesive provided on the back surface thereof. The attachment of the polishing pad to the rotary drum is performed, for example, by bringing the adhesive side into close contact with the peripheral surface of the rotary drum while rolling the rotary body on a polishing pad placed with the adhesive side up. .
[0009]
As a method of attaching the polishing pad, which is different from edge polishing, in the field of CMP (Chemical Mechanical Polishing), which is a technique for flattening a wafer surface, a method of attaching the polishing pad to a rotating platen so that no air bubbles remain. Has been proposed.
[0010]
For example, in a CMP polishing apparatus that flattens a wafer surface provided on the other surface plate surface by using a polishing pad provided on one surface surface surface that rotates relative to the polishing pad, There has been proposed a technique of attaching a polishing pad to a surface of a surface plate, in which air trapped at the time of attachment to the surface of the surface plate is released, so that no air bubbles remain (for example, see Patent Document 1).
[0011]
Further, as a technique for eliminating bubbles remaining when the polishing pad is provided on the surface of the platen, a polishing pad constituting the polishing pad is provided as an independent island on the surface of the surface of the platen, or the polishing cloth or the surface of the surface of the platen. Also, a configuration in which grooves are provided at predetermined intervals has been proposed (for example, see Patent Document 2).
[0012]
[Patent Document 1]
JP-A-2002-205258 (paragraph 0018, FIG. 2)
[0013]
[Patent Document 2]
JP-A-7-142430 (paragraph 0032, FIG. 2)
[0014]
[Problems to be solved by the invention]
However, the present inventor has found that the above-described edge polishing technique has the following problems.
[0015]
In the wafer edge polishing operation, a chipping failure at the edge portion occurred. As a result of a detailed study of the cause of such a failure, it was found that the orientation flat portion of the rotating wafer cut into the bulging portion of the polishing pad, and at that time, edge chipping occurred.
[0016]
It is considered that the swollen portion of the polishing pad is generated when air bubbles enter between the surface of the adhesive sheet of the polishing pad and the polishing drum when the polishing pad is attached to the polishing drum of the edge polishing apparatus.
[0017]
However, up to now, sufficient technical measures have not been taken against bulging due to residual air bubbles in the polishing pad of the edge polishing apparatus.
[0018]
An object of the present invention is to prevent the generation of air bubbles when attaching a polishing pad to a rotating body such as a drum.
[0019]
The above and other objects and novel features of the present invention will become apparent from the description of the present specification and the accompanying drawings.
[0020]
[Means for Solving the Problems]
The following is a brief description of an outline of typical inventions disclosed in the present application.
[0021]
That is, in the present invention, when the polishing pad is attached, the exhaust path for releasing the air caught between the attachment surface and the polishing pad is provided, so that the polishing pad can be attached without generating swelling or the like based on the remaining air bubbles. It can be performed.
[0022]
BEST MODE FOR CARRYING OUT THE INVENTION
Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings. In all the drawings for describing the embodiments, members having the same functions are denoted by the same reference numerals, and repeated description thereof may be omitted.
[0023]
(Embodiment 1)
FIG. 1 is an explanatory diagram schematically showing a configuration of an edge polishing apparatus according to the present invention. FIG. 2 is an explanatory diagram showing a state of attaching the polishing pad to the rotating drum.
[0024]
In the edge polishing apparatus 10, as shown in FIG. 1, two polishing stations 11 are provided opposite to each other, and each polishing station 11 is provided with one polishing drum 20 as a rotating body. Rotating heads 12 are provided on both sides of the rotating head 20 to rotatably support the wafer.
[0025]
A wafer transfer robot 13 is provided between the opposing polishing stations 11 to supply the wafer stored in the load cassette 14 to the wafer rotating head 12. Further, the wafer after the edge polishing is completed is also stored in the unloading water tank 15 from the wafer rotating head 12 by the wafer transfer robot 13.
[0026]
The polishing drum 20 is configured to be able to rotate at a high speed by a motor while moving up and down by an elevating mechanism (not shown) during edge polishing of a wafer.
[0027]
As shown in FIG. 2, the polishing drum 20 has a polishing pad 30 wound around its peripheral surface 20a. The polishing pad 30 has a configuration in which a polishing cloth 31 and an adhesive sheet 32 are attached to each other, and is attached such that the surface of the adhesive sheet 32 is wound around the peripheral surface 20 a of the rotating drum 20.
[0028]
As the polishing cloth 31, for example, a nonwoven fabric or the like can be used. In addition to the nonwoven fabric, use of a nonwoven fabric processed with a synthetic resin, or a synthetic resin foam, synthetic leather, or the like can be considered.
[0029]
As shown in FIGS. 3A to 3D, the polishing pad 30 has a through hole 33 a having a small diameter from the surface of the polishing cloth 31 to the surface of the adhesive sheet 32 for removing air trapped at the time of sticking. Are provided as a plurality of exhaust passages 33. FIG. 3A is an enlarged view of a part of the polishing pad 31 shown in FIG. 3B. The diameter of the through hole 33a is set so that the edge portion is not caught by the polishing cloth side opening 33b of the through hole 33a during edge polishing of the wafer.
[0030]
For example, if the diameter is set to be equal to or less than the joint distance between both ends of the polishing pad 30, it is considered that there is no trouble in catching the edge of the wafer. Incidentally, the joint of the polishing pad 30 is normally set to be about 2 mm or less as a range that does not hinder polishing, and the maximum diameter can be specified to be about 2 mm using the joint interval as a guide.
[0031]
As shown in FIG. 3 (c), the through-hole 33 a is provided so as to penetrate the adhesive sheet 32 along the thickness direction of the polishing pad 30, that is, in the direction perpendicular to the surface of the polishing pad 31. Good. FIG. 3C is an enlarged view of a part of the cross-sectional structure of the polishing pad 31 shown in FIG.
[0032]
The direction of the through-hole 33a does not need to be limited to the vertical direction, and may be set in any direction.
[0033]
However, when special consideration is required for the crushing of the polishing pad 30 at the time of edge polishing, the crushing is more difficult when the through-hole direction is set to the above-described vertical direction than when the polishing pad 30 is obliquely penetrated. It can be said that it can be done.
[0034]
At the time of edge polishing, the edge of the wafer is somewhat pressed against the polishing cloth 31 side. However, assuming that the material of the polishing cloth 31 and the pressing force are the same, an oblique crossing of the direction of the pressing force is performed. The provision of the through holes makes the polishing pad more easily crushed. Although the degree of crushing varies depending on the degree, it is supposed that the pressing force of the edge portion on the polishing pad during edge polishing is easily changed, which may hinder stable polishing. Also, it can be said that the drilling workability is easier in the vertical direction.
[0035]
In order to attach the polishing pad 30 having such a configuration to the peripheral surface 20a of the polishing drum 20, for example, the polishing pad 30 is placed with the adhesive sheet 32 facing upward, and the peripheral surface 20a of the polishing drum 20 is placed on the adhesive sheet 32. The polishing pad 31 may be wound around the peripheral surface 20a so that it is mounted so as to be held and pressed and rotated from the end in that state.
[0036]
When the polishing pad 31 is wound, the air that has been trapped passes through the adhesive sheet-side opening 33c of the through hole 33a near the biting position, passes through the polishing cloth-side opening 33b, and remains as much air bubbles as to cause a failure. It is possible to paste the polishing pad 31 having no gap on the rotating drum 20.
[0037]
Since the biting air can be exhausted by the through-hole 33a, it can be said that the through-hole 33a is preferably as large as possible. However, as described above, at the time of edge polishing of the wafer, the through-hole 33a has a polishing cloth side opening 33b. The density must be set so that the edges are not scratched.
[0038]
The pitch P between the adjacent through-holes 33a may be set wider than the gap L between the edge portions of the wafer W and the polishing pad 30 during edge polishing, as shown in FIG. 3E, for example.
[0039]
As shown in FIG. 3A, the through holes 33a may be arranged in a line in the vertical and horizontal directions along the surface of the polishing pad 31, as shown in FIG. Absent. The staggered arrangement is particularly preferable when the pitch P is smaller than the biting interval L. In FIG. 3A, for simplicity of illustration, the display of the through-holes 33a is partially omitted and is indicated by dots.
[0040]
The edge portion of the wafer is polished as follows using the edge polishing apparatus 10 having the polishing pad 31 having such a configuration. As shown in FIG. 1 described above, the wafer is taken out of the load cassette 14 by the wafer transfer robot 13 and supplied to the wafer rotating head 12 provided in the polishing station 11 while being positioned by the wafer positioning mechanism 16. You.
[0041]
The wafer rotating head 12 holds the wafer W supplied by the wafer transfer robot 13 by surface suction. In the held state, as shown in FIG. 4, the wafer is rotated while being inclined at a predetermined angle, for example, 45 ° with respect to the surface of the polishing pad 30 of the rotating drum 20.
[0042]
At the same time, the rotary drum 20 having the polishing pad 30 provided with a large number of through-holes 33a having the above configuration is also rotated, and the wafer rotary head 12 is brought closer to the rotary drum 20 side, and the weight 12a provided on the wafer rotary head 12 is provided. Is adjusted, the edge portion of the wafer W is brought into contact with the polishing pad 30 at a predetermined pressure. As shown by the up and down arrows in FIG. 4, the rotating drum 20 automatically moves up and down during edge polishing, that is, repeats automatic up and down movement.
[0043]
Incidentally, the rotation of the wafer head 12 is set to be slower than the rotation of the polishing drum 20. For example, if the rotation speed of the polishing drum 20 is 800 rpm, it is set to about one rotation every three minutes. The lifting speed of the polishing drum 20 may be set to, for example, about 50 mm / min. The contact pressure of the wafer W to the polishing pad 30 may be set to about 1.8 kg in the above-described rotation setting.
[0044]
As shown in FIG. 4, a slurry containing fine abrasive grains is supplied to the contact area between the rotary pad 31 and the edge of the wafer W. The slurry is supplied from a slurry tank 17 provided in the edge polishing apparatus 10 through a slurry supply path 17a, as shown in FIG.
[0045]
As the slurry, for example, an aqueous dispersion of colloidal silica may be used, and a buffer, a dispersant, and the like may be appropriately added.
[0046]
In this way, edge polishing of the wafer is performed. When the edge polishing on one surface is completed, the wafer rotating head 12 is separated from the rotating drum 20 side, the holding posture of the wafer W is returned to the original position, the rotation is stopped, and the wafer W is inverted by the wafer transfer robot 13. The wafer rotating head 12 holding the inverted wafer W performs edge polishing on the other surface in the same manner as described above.
[0047]
In the edge polishing of the wafer W, as described above, the polishing pad 30 is attached to the peripheral surface 20a of the rotating drum 20 so as not to be caught by air, and the swelling of the polishing pad 30 due to the remaining air bubbles is reduced. Therefore, even if the rotating wafer W comes into contact with the orientation flat portion of the wafer W, the orientation flat does not cut into the bulge as in the past, and the chipping of the wafer can be effectively prevented.
[0048]
By performing edge polishing twice for each side in this manner, both sides of the edge portion of the wafer W are mirror-polished, and the edge polishing is completed. The wafer W after the edge polishing is stored in the unloading water tank 15 and temporarily stored by the wafer transfer robot 13 from the wafer rotating head 12 in the state in which the posture has been returned to the original position, as described above.
[0049]
(Embodiment 2)
In the present embodiment, unlike the first embodiment, a configuration in which an exhaust path is provided on the polishing drum side will be described.
[0050]
As shown in FIGS. 5A and 5B, the polishing drum 20 is provided with a plurality of through holes 34a as exhaust passages 34 on the peripheral surface 20a. As shown in FIGS. 5C and 5D, the through hole 34a directs the drum wall 21 of the cylindrical polishing drum 20 from the drum wall outer peripheral surface 21a side to the drum wall inner peripheral surface 21b. Through holes.
[0051]
The diameter and the installation density of the through hole 34a may be set in the manner of the through hole 33a provided in the polishing pad 30 described in the first embodiment.
[0052]
Incidentally, FIG. 5A is an enlarged view of a portion surrounded by a square in FIG. 5B, and FIG. 5C is an enlarged view of a portion surrounded by a square in FIG. 5D.
[0053]
If the polishing drum 20 is provided with the through holes 34a in this manner, when the polishing pad 30 is attached to the peripheral surface 21 of the polishing drum 20, for example, the polishing pad 30 is placed with the adhesive sheet 32 side facing up, The peripheral surface 20a of the polishing drum 20 is placed on the adhesive sheet 32 so as to be pressed firmly, and the polishing pad 31 is wound around the peripheral surface 20a while rotating from the end in that state. And attaching the polishing pad 30 having no serious air bubbles to the rotating drum 20 by passing through the opening of the through hole 34a on the drum wall outer peripheral surface 21a side to the opening on the drum wall inner peripheral surface 21b side. Can be.
[0054]
If the configuration of the present embodiment is adopted, the configuration on the polishing pad 30 side, which is usually used as a consumable, does not need to be changed at all, and only the configuration on the polishing drum 20 side is required. It can be handled at low cost.
[0055]
(Embodiment 3)
In the present embodiment, a case will be described in which the exhaust path provided in the polishing drum is formed in a groove, unlike the third embodiment.
[0056]
As shown in FIGS. 6A and 6B, a plurality of grooves 35 a are provided on the peripheral surface 20 a of the polishing drum 20 along the vertical direction of the peripheral surface 20 a as the exhaust path 35. As shown in FIG. 6B, the groove 35a is provided vertically with respect to the peripheral surface 20a, and only the lower end side is opened. In FIG. 6B, for simplicity of illustration, the groove 35a is omitted except for a part thereof, but the groove 35a is provided on the entire peripheral surface.
[0057]
In the above description, the opening of the groove 35a is set only on the lower end side. However, if an opening is provided on the upper end side, slurry or water during edge polishing is likely to enter, so this is a measure to prevent this. is there. Needless to say, when it is not necessary to consider such a point, the openings may be provided at the upper and lower ends, or may be provided only at the upper end.
[0058]
Although the shape of the groove 35a may be any shape, for example, it is linear as shown in FIGS. 6 (a) and 6 (b) and shown in FIGS. 6 (c) and 6 (d). Thus, the cross section may be formed in a semicircular shape.
[0059]
The size and the set density of the groove 35a may be set so that a concave portion based on the groove 35a does not occur on the surface of the rotating pad 30 provided on the peripheral surface 20a.
[0060]
The groove 35a having such a configuration may be formed by forming a groove on the outer peripheral surface 21a of the drum wall. However, it may be simply formed by attaching a corrugated plate to the outer peripheral surface 21a of the drum.
[0061]
By providing the groove 35a in this manner, when attaching the polishing pad 30 to the polishing drum 20, it is possible to eliminate the trapped air and perform the attachment without leaving any bubbles.
[0062]
Further, the groove 35a may be formed in a lattice shape or a mesh shape in which the vertical groove and the horizontal groove cross each other on the peripheral surface 20a.
[0063]
(Embodiment 4)
In the present embodiment, a case will be described in which the configuration described above is applied to a CMP polishing apparatus used for flattening a wafer surface, unlike the edge polishing technique.
[0064]
The CMP polishing apparatus 40 has a rotatable polishing platen 41, for example, as shown in FIG. 7, and a polishing pad 42 is provided on the upper surface thereof. The polishing pad 42 has a configuration in which a polishing cloth and an adhesive sheet are laminated, and is configured by attaching the adhesive sheet side to the upper surface of the polishing platen 41.
[0065]
A wafer carrier 43 that faces the polishing pad 42 and moves on the surface of the polishing pad 42 while rotating is provided so that the polishing surface of the wafer can be supported while being pressed against the polishing cloth of the polishing pad 42 with a predetermined pressure. Has become. In addition, a pad conditioner 44 for cutting the upper surface of the polishing cloth to regenerate a polishing function is also provided so as to be able to move on the surface of the polishing pad 42 while rotating in order to ensure the flatness and uniformity of polishing. ing.
[0066]
In the configuration of the CMP polishing apparatus 40, as shown in FIGS. 8A and 8B, a large number of through holes 45 a are provided from the upper surface of the polishing platen 41 as exhaust paths 45 through the inside of the polishing platen 41. I have.
[0067]
If such a configuration is adopted, when the polishing pad 42 is attached to the upper surface of the polishing platen 41, the trapped air is exhausted through the through-hole 45 a, and the air on the polishing platen 41 of the polishing pad 42 having no air bubbles remains. Can be attached to Therefore, the flatness of the surface of the polishing pad 42 provided on the polishing platen 41 is enhanced, and the polishing quality of the wafer surface can be improved accordingly.
[0068]
As shown in FIGS. 8C and 8D, the through hole 45a as the exhaust passage 45 may be provided on the polishing pad 42 side. That is, the polishing pad 42 may be provided so as to pass from the adhesive sheet side to the polishing cloth side.
[0069]
(Embodiment 5)
In the present embodiment, by changing the configuration of the adhesive sheet of the polishing pad, the configuration of the polishing pad, the polishing drum, etc., which has been used so far, is used as it is, so that no bubbles remain when the polishing pad is attached. A case in which an escape path for the trapped air is formed will be described.
[0070]
All of the first to fourth embodiments are configurations devised on the premise that the pressure-sensitive adhesive sheet is laminated on the entire back surface of the polishing pad. The remaining air bubbles are generated because the surroundings of the trapped air are surrounded by a close contact portion between the adhesive sheet and the polishing drum or the polishing platen, so that there is no room for the air to escape.
[0071]
Therefore, the present inventor has conceived that the escape route can be secured by forming a part of the periphery of the bitten air in the non-contact portion.
[0072]
That is, as shown in FIGS. 9A and 9B, in the present embodiment, the adhesive sheet 32 is coated on one surface of the sheet substrate 32a with the adhesive material 36 entirely, and the other surface is coated with the adhesive material. The material 36 was provided in a scattered manner.
[0073]
As shown in FIG. 9C, the pressure-sensitive adhesive sheet 32 having such a configuration is such that the side on which the pressure-sensitive adhesive 36 is entirely applied is attached to the back surface of the polishing pad 31 and the side on which the pressure-sensitive adhesive 36 is provided in a scattered manner. It is used in such a manner that it is attached to the peripheral surface 20a of the drum wall 21 of the polishing drum 20.
[0074]
In this manner, between the polishing pad 30 and the polishing drum 20, as shown in FIG. 9C, the periphery of the adhesive material 36 provided in a scattered manner is formed in the exhaust path 37.
[0075]
Instead of providing the adhesives 36 in the form of scattered points, the adhesives 36 may be separated by a predetermined distance and provided in parallel in a row. In short, on the side to be adhered to the polishing drum 20, the adhesive material 36 is not applied on the entire surface, and a portion where the adhesive material 36 is not provided is left. It does not matter.
[0076]
Such a configuration can also be applied to an adhesive pressure-sensitive adhesive sheet used when attaching the polishing pad 42 to the polishing platen 41 in the CMP polishing apparatus 40 shown in FIG.
[0077]
As described above, the invention made by the inventor has been specifically described based on the embodiment. However, the present invention is not limited to the embodiment, and various modifications can be made without departing from the gist of the invention. Needless to say.
[0078]
For example, in the above description, the configuration of the through-hole or the groove as the exhaust path has been described by exemplifying a case in which each is independently applied, but these may be used in combination.
[0079]
Further, the case where the configuration of the exhaust path is applied to one of the polishing drum and the polishing pad has been described, but a configuration that applies to both may be adopted.
[0080]
【The invention's effect】
The effects obtained by typical aspects of the invention disclosed in the present application will be briefly described as follows.
[0081]
That is, at the time of attaching the polishing pad, the trapped air can be released so that no air bubbles remain.
[Brief description of the drawings]
FIG. 1 is an explanatory diagram schematically showing an example of the configuration of an edge polishing apparatus according to the present invention.
FIG. 2 is an explanatory diagram showing a state in which a polishing pad is attached to a rotating drum.
3A is a partial plan view showing a through hole provided in a polishing pad, FIG. 3B is a plan view showing a polishing cloth surface, and FIG. 3C is a plan view showing a through hole. It is sectional drawing which shows, (d) is sectional drawing which shows a polishing pad, (e) is explanatory drawing which shows the setting situation of the attachment pitch of a through-hole.
FIG. 4 is an explanatory diagram showing a state of edge polishing of a wafer.
5A is a partial plan view showing a state of a through-hole provided in a polishing drum, FIG. 5B is a perspective view showing a state of a polishing drum, and FIG. 5C is a view showing a state of a through-hole; It is sectional drawing, (d) is a plane sectional view which shows a grinding drum.
6A is a partial plan view showing a groove provided on the peripheral surface of the polishing drum, FIG. 6B is a perspective view showing the state of the polishing drum, and FIG. 6C is a perspective view showing the groove. It is sectional drawing, (d) is a plane sectional view which shows a grinding drum.
FIG. 7 is a perspective view illustrating an example of a configuration of a CMP polishing apparatus.
8A is a partial plan view showing a state of a through hole provided in a polishing platen, FIG. 8B is a plan view showing a polishing platen, and FIG. 8C is a plan view showing a polishing pad attached to the polishing platen. FIG. 4 is a partial plan view showing a state of a through hole provided, and FIG. 4D is a plan view showing a polishing pad.
9A is a cross-sectional view showing a laminated structure of the pressure-sensitive adhesive sheet, FIG. 9B is a plan view of the side where the pressure-sensitive adhesive material is provided in a scattered manner, and FIG. It is a fragmentary sectional view showing the situation where the polish pad using the shown adhesive sheet was stuck on the polish drum.
[Explanation of symbols]
Reference Signs List 10 edge polishing apparatus 11 polishing station 12 wafer rotating head 13 wafer transfer robot 14 load cassette 15 unload water tank 16 wafer positioning mechanism 17 slurry tank 17a slurry supply path 20 polishing drum 20a peripheral surface 21 drum wall 21a drum wall outer peripheral surface 21b drum Inner wall surface 30 Polishing pad 31 Polishing cloth 32 Adhesive sheet 32a Sheet substrate 33 Exhaust path 33a Through hole 33b Polishing cloth side opening 33c Adhesive sheet side opening 34 Exhaust path 34a Through hole 35 Exhaust path 35a Groove 36 Adhesive 37 Exhaust path 40 CMP polishing apparatus 41 Polishing platen 42 Polishing pad 43 Wafer carrier 44 Pad conditioner 45 Exhaust path 45a Through hole L Biting interval P Pitch W Wafer

Claims (5)

A polishing apparatus for polishing the surface of a polishing pad provided on a rotating body by contacting a body to be polished,
The polishing apparatus according to claim 1, wherein the rotating body is provided with a through hole having one end communicating with the back surface of the polishing pad and the other end communicating with the atmosphere. A polishing apparatus for polishing the edge portion by bringing the edge portion of the wafer into contact with the polishing pad wound around the peripheral surface of the rotating body,
A polishing apparatus, characterized in that at least one of the rotating body and the polishing pad is provided with an exhaust passage communicating with a contact portion between the rotating body and the polishing pad. A polishing apparatus for polishing the edge portion by bringing the edge portion of the wafer into contact with the polishing pad wound around the peripheral surface of the rotating body,
The polishing apparatus according to claim 1, wherein the rotating body is provided with a through hole having one end communicating with the peripheral surface and the other end communicating with the atmosphere. A polishing apparatus for polishing the edge portion by bringing the edge portion of the wafer into contact with the polishing pad wound around the peripheral surface of the rotating body,
The polishing apparatus according to claim 1, wherein the polishing pad is provided with a through hole having one end communicating with the peripheral surface and the other end communicating with the atmosphere. A polishing method for performing mirror polishing of the edge portion by bringing the edge portion of the wafer into contact with the polishing pad wound around the peripheral surface of the rotating body,
An exhaust path provided on at least one of the rotating body and the polishing pad and communicating with a contact surface between the rotating body and the polishing pad exhausts air that is caught when the polishing pad is attached to the peripheral surface. Then, the polishing pad is attached to the peripheral surface in which bubbles are suppressed,
A polishing method, characterized in that edge polishing is performed while suppressing cutting of the edge portion during polishing to a bulge of the polishing pad based on remaining air bubbles and preventing chipping of the wafer.

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