WO2003054921A2 - Verfahren zum herstellen von iii-v-laserbauelementen - Google Patents
Verfahren zum herstellen von iii-v-laserbauelementen Download PDFInfo
- Publication number
- WO2003054921A2 WO2003054921A2 PCT/EP2002/012799 EP0212799W WO03054921A2 WO 2003054921 A2 WO2003054921 A2 WO 2003054921A2 EP 0212799 W EP0212799 W EP 0212799W WO 03054921 A2 WO03054921 A2 WO 03054921A2
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- iii
- layer
- substrate
- deposited
- buffer layer
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
- H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/32308—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm
- H01S5/32341—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm blue laser based on GaN or GaP
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02373—Group 14 semiconducting materials
- H01L21/02381—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/02433—Crystal orientation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02455—Group 13/15 materials
- H01L21/02458—Nitrides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02538—Group 13/15 materials
- H01L21/0254—Nitrides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/0206—Substrates, e.g. growth, shape, material, removal or bonding
- H01S5/021—Silicon based substrates
Definitions
- the invention relates to a method for producing III-V laser components, a III-V semiconductor layer being formed on a silicon substrate in a process chamber of a reactor from gaseous starting materials, for example trimethyl gallium, trimethyl indium, trimethyl aluminum, phosphine or arsine. For example, gallium nitride is deposited.
- III-nitride semiconductors on foreign substrates such as Sapphire, silicon carbide or silicon is inexpensive because this substrate material is less expensive than III-V substrate material.
- the lattice mismatch of the layer on the substrate is problematic.
- gallium nitride grows rotated by 30 ° to the sapphire and thus reduces part of the lattice mismatch. Due to this twisted growth, there is no common direction of fracture or splitting of the layer relative to the substrate.
- the break line generally runs along the break line or split line of the substrate, because it is considerably thicker than the layer deposited thereon.
- the invention has for its object to provide an inexpensive method to produce high quality lasers.
- the object is achieved by the invention specified in the claims, the main focus being on first depositing an aluminum-containing buffer layer onto a Si substrate, in particular an Si (III) substrate. This is done using MOCVD.
- This buffer layer can consist of aluminum nitride and can be 20 to 100 ran thick.
- the active III-V layer, preferably a III-nitride layer and particularly preferably a gallium nitride layer or a sequence of such layers for component layers is then deposited onto this buffer layer in the same reactor, preferably without further intermediate steps, in such a way that the lattice plane of the Layer runs parallel to the splitting direction of the substrate.
- the break When the substrate is broken, the break then takes place along a crystallographically suitable surface.
- the break occurs essentially along a plane.
- the fracture or gap lines of the Si (III) substrate can then be selected so that plane-parallel layer fracture surfaces are created. These layer fracture areas then form the laser facets.
- the laser facets thus result from only breaking or splitting. This is possible because the crystallographic fracture direction of the silicon substrate and the gallium nitride-based structure coincide.
- the aluminum-containing germ layer is essential. With a seed layer of this type, it is even possible to deposit gallium nitride adapted to the direction of fracture on Si (001). The only problem here is the lack of a common crystal symmetry.
- electrically active layers can be deposited onto the layer sequence described above. It is essential, however, that the hexagonal crystal of gallium nitride is deposited on the cubic crystal lattice of silicon with a corresponding crystal orientation in such a way that the natural fracture directions of the two crystals are in the plane coincide in such a way that only breaking the substrate along the natural break lines creates plane-parallel laser facets.
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
Description
Claims
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2003555550A JP2005513797A (ja) | 2001-12-21 | 2002-11-15 | Iii−vレーザ構造部品の製作方法 |
KR10-2004-7009461A KR20040068266A (ko) | 2001-12-21 | 2002-11-15 | Ⅲ-ⅴ 레이저 소자의 제조방법 |
EP02805280A EP1459365A2 (de) | 2001-12-21 | 2002-11-15 | Verfahren zum herstellen von iii-v-laserbauelementen |
AU2002356608A AU2002356608A1 (en) | 2001-12-21 | 2002-11-15 | Method for the production of iii-v laser components |
US10/872,902 US20050025909A1 (en) | 2001-12-21 | 2004-06-21 | Method for the production of III-V laser components |
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE10163714 | 2001-12-21 | ||
DE10163714.4 | 2001-12-21 | ||
DE10206750.3 | 2002-02-19 | ||
DE10206750A DE10206750A1 (de) | 2001-12-21 | 2002-02-19 | Verfahren zum Herstellen von III-V-Laserbauelementen |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US10/872,902 Continuation US20050025909A1 (en) | 2001-12-21 | 2004-06-21 | Method for the production of III-V laser components |
Publications (3)
Publication Number | Publication Date |
---|---|
WO2003054921A2 true WO2003054921A2 (de) | 2003-07-03 |
WO2003054921A3 WO2003054921A3 (de) | 2003-12-24 |
WO2003054921B1 WO2003054921B1 (de) | 2004-03-04 |
Family
ID=26010857
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/EP2002/012799 WO2003054921A2 (de) | 2001-12-21 | 2002-11-15 | Verfahren zum herstellen von iii-v-laserbauelementen |
Country Status (5)
Country | Link |
---|---|
US (1) | US20050025909A1 (de) |
EP (1) | EP1459365A2 (de) |
JP (1) | JP2005513797A (de) |
AU (1) | AU2002356608A1 (de) |
WO (1) | WO2003054921A2 (de) |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US11308477B2 (en) | 2005-04-26 | 2022-04-19 | Spriv Llc | Method of reducing fraud in on-line transactions |
US11818287B2 (en) | 2017-10-19 | 2023-11-14 | Spriv Llc | Method and system for monitoring and validating electronic transactions |
US8362503B2 (en) | 2007-03-09 | 2013-01-29 | Cree, Inc. | Thick nitride semiconductor structures with interlayer structures |
US7825432B2 (en) * | 2007-03-09 | 2010-11-02 | Cree, Inc. | Nitride semiconductor structures with interlayer structures |
US11354667B2 (en) | 2007-05-29 | 2022-06-07 | Spriv Llc | Method for internet user authentication |
DE102009051520B4 (de) | 2009-10-31 | 2016-11-03 | X-Fab Semiconductor Foundries Ag | Verfahren zur Herstellung von Siliziumhalbleiterscheiben mit Schichtstrukturen zur Integration von III-V Halbleiterbauelementen |
US11792314B2 (en) | 2010-03-28 | 2023-10-17 | Spriv Llc | Methods for acquiring an internet user's consent to be located and for authenticating the location information |
US9595805B2 (en) | 2014-09-22 | 2017-03-14 | International Business Machines Corporation | III-V photonic integrated circuits on silicon substrate |
US9395489B2 (en) | 2014-10-08 | 2016-07-19 | International Business Machines Corporation | Complementary metal oxide semiconductor device with III-V optical interconnect having III-V epitaxially formed material |
US9344200B2 (en) | 2014-10-08 | 2016-05-17 | International Business Machines Corporation | Complementary metal oxide semiconductor device with III-V optical interconnect having III-V epitaxial semiconductor material formed using lateral overgrowth |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6121121A (en) * | 1997-11-07 | 2000-09-19 | Toyoda Gosei Co., Ltd | Method for manufacturing gallium nitride compound semiconductor |
WO2001043174A2 (en) * | 1999-12-13 | 2001-06-14 | North Carolina State University | Fabrication of gallium nitride layers on textured silicon substrates |
WO2001095380A1 (fr) * | 2000-06-09 | 2001-12-13 | Centre National De La Recherche Scientifique | Procede de preparation d'une couche de nitrure de gallium |
WO2002048434A2 (en) * | 2000-12-14 | 2002-06-20 | Nitronex Corporation | Gallium nitride materials and methods for forming layers thereof |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR0174303B1 (ko) * | 1994-06-24 | 1999-02-01 | 가나이 쯔또무 | 반도체장치 및 그 제조방법 |
JP3557011B2 (ja) * | 1995-03-30 | 2004-08-25 | 株式会社東芝 | 半導体発光素子、及びその製造方法 |
JP3763753B2 (ja) * | 2001-06-05 | 2006-04-05 | 豊田合成株式会社 | Iii族窒化物系化合物半導体素子及びその製造方法 |
JP2003152220A (ja) * | 2001-11-15 | 2003-05-23 | Sharp Corp | 半導体発光素子の製造方法および半導体発光素子 |
-
2002
- 2002-11-15 JP JP2003555550A patent/JP2005513797A/ja active Pending
- 2002-11-15 EP EP02805280A patent/EP1459365A2/de not_active Withdrawn
- 2002-11-15 WO PCT/EP2002/012799 patent/WO2003054921A2/de not_active Application Discontinuation
- 2002-11-15 AU AU2002356608A patent/AU2002356608A1/en not_active Abandoned
-
2004
- 2004-06-21 US US10/872,902 patent/US20050025909A1/en not_active Abandoned
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6121121A (en) * | 1997-11-07 | 2000-09-19 | Toyoda Gosei Co., Ltd | Method for manufacturing gallium nitride compound semiconductor |
WO2001043174A2 (en) * | 1999-12-13 | 2001-06-14 | North Carolina State University | Fabrication of gallium nitride layers on textured silicon substrates |
WO2001095380A1 (fr) * | 2000-06-09 | 2001-12-13 | Centre National De La Recherche Scientifique | Procede de preparation d'une couche de nitrure de gallium |
WO2002048434A2 (en) * | 2000-12-14 | 2002-06-20 | Nitronex Corporation | Gallium nitride materials and methods for forming layers thereof |
Non-Patent Citations (1)
Title |
---|
MARCHAND H ET AL: "METALORGANIC CHEMICAL VAPOR DEPOSITION OF GAN ON SI(111): STRESS CONTROL AND APPLICATION TO FIELD-EFFECT TRANSISTORS" JOURNAL OF APPLIED PHYSICS, AMERICAN INSTITUTE OF PHYSICS. NEW YORK, US, Bd. 89, Nr. 12, 15. Juni 2001 (2001-06-15), Seiten 7846-7851, XP001066072 ISSN: 0021-8979 * |
Also Published As
Publication number | Publication date |
---|---|
AU2002356608A1 (en) | 2003-07-09 |
WO2003054921B1 (de) | 2004-03-04 |
AU2002356608A8 (en) | 2003-07-09 |
WO2003054921A3 (de) | 2003-12-24 |
EP1459365A2 (de) | 2004-09-22 |
JP2005513797A (ja) | 2005-05-12 |
US20050025909A1 (en) | 2005-02-03 |
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