WO2003049166A1 - Procede et appareil pour mesurer l'etat d'une couche de film, dispositif de polissage et procede de fabrication de dispositif semi-conducteur - Google Patents

Procede et appareil pour mesurer l'etat d'une couche de film, dispositif de polissage et procede de fabrication de dispositif semi-conducteur Download PDF

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Publication number
WO2003049166A1
WO2003049166A1 PCT/JP2002/012048 JP0212048W WO03049166A1 WO 2003049166 A1 WO2003049166 A1 WO 2003049166A1 JP 0212048 W JP0212048 W JP 0212048W WO 03049166 A1 WO03049166 A1 WO 03049166A1
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WO
WIPO (PCT)
Prior art keywords
film layer
state
polishing
measuring
film
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PCT/JP2002/012048
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English (en)
Japanese (ja)
Inventor
Kenji Takiguchi
Takehiko Ueda
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Nikon Corporation
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Publication of WO2003049166A1 publication Critical patent/WO2003049166A1/fr

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Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/005—Control means for lapping machines or devices
    • B24B37/013—Devices or means for detecting lapping completion
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B49/00—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
    • B24B49/12—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation involving optical means

Definitions

  • the present invention relates to a method for measuring a state of a film layer, which is used in a process of forming a film on a semiconductor wafer or a removing step such as a polishing process of a film layer on a wafer in a process of manufacturing a semiconductor device such as an LSI.
  • the present invention relates to an apparatus for measuring a state, a polishing apparatus using the apparatus, and a method for manufacturing a semiconductor device using the apparatus.
  • CMP polishing process
  • CMP Chemical Mechanical Polishin or ⁇ j lanarization
  • a slurry in which abrasive particles (typically silica, alumina, cerium oxide, etc.) are dispersed in a solvent for the object to be polished, such as an acid or an alkali.
  • abrasive particles typically silica, alumina, cerium oxide, etc.
  • the pad is pressed against the wafer surface and rubbed by relative motion to advance polishing.
  • pressure and relative By making the movement speed uniform, uniform polishing in the surface becomes possible.
  • a general film thickness measurement device is often used for this detection, and a plank portion without a device pattern of a wafer cleaned after the CMP polishing process is selected as a measurement location, and various methods are used. It was measured in.
  • the present invention has been made in order to solve such a problem, and a method of measuring a film layer state in various processes including a semiconductor manufacturing process as described above.
  • Another object of the present invention is to provide an apparatus for performing the above, a polishing apparatus using the apparatus, and a method for manufacturing a semiconductor device using the polishing apparatus.
  • a first invention for achieving the above object is a multilayer film having a film layer structure, a part of which has a thin film having an antireflection effect by an interference / diffraction effect.
  • a method of measuring during the polishing process of the multilayer film which comprises irradiating the multilayer film with light, measuring reflected light reflected therefrom or transmitted light transmitted therethrough with time, and measuring the reflected light or The intensity of the reflected light or transmitted light after the intensity of the transmitted light deviates from a predetermined range is determined. And measuring the state of the film layer.
  • Si x N Y which is used as a barrier layer, Ta, TaN, as TiN or the like, those having a reflection preventing effect due to interference. Diffraction effects .
  • the influence of the thin film having an anti-reflection effect due to the interference / diffraction effect does not appear until a predetermined amount of polishing is performed from the start of polishing, and the intensity of reflected light or transmitted light is not increased. Is within a predetermined range.
  • a second invention for achieving the above object is the first invention, wherein light used for measurement is monochromatic light.
  • the state of the film layer can be detected very accurately.
  • a monochromatic light source including a light source made monochromatic by a spectroscope
  • a light source having a continuous vector may be used.
  • the reflected light or the transmitted light may be separated by a spectroscope, and one of the spectra may be used.
  • a third invention for achieving the object is the first invention, wherein light having a continuous spectrum is used for measurement, and an average value of reflection intensity or transmission intensity of light in a predetermined range of wavelength or Integral value with the reflected light intensity or transmitted intensity It is characterized by doing.
  • the state of the film layer can be detected very accurately. It varies depending on the film layer structure, the pattern formed on the film layer, and the like.
  • the average value or the integrated value of the reflection intensity or the transmission intensity of the light in the predetermined range is defined as the reflected light intensity or the transmitted light intensity, the diffraction of the lower layer pattern and the like are considered.
  • a fourth invention for achieving the above object is any one of the first invention to the third invention, wherein the film layer state to be measured is the reflection of the multilayer film being polished. It is characterized in that it has a thickness of a thin film having a preventive action.
  • the first to third aspects of the present invention mainly include reflected light or transmitted light from a thin film having an antireflection effect by an interference / diffraction effect, and reflected light or transmitted light from a thin film formed thereon. Since the change in intensity is used, the observed reflected light or transmitted light has a particularly strong relationship with the thickness of the thin film having the antireflection effect. Accordingly, by measuring the intensity of the reflected light or the transmitted light, the thickness of the thin film having the antireflection effect can be determined.
  • a fifth invention for achieving the above object is any one of the first invention to the third invention, wherein the measured film layer state is a polishing end point, and the reflected light intensity is previously determined.
  • the point at which the maximum value is first reached after the value deviates from the prescribed range and the first minimum value is reached is the polishing end point. It is assumed that.
  • polishing is often terminated while leaving the barrier layer by a predetermined thickness.
  • the intensity of the reflected light and the thickness of the barrier layer have a strong correlation due to the interference and diffraction effects. Therefore, if the point at which the reflected light intensity first deviates from the predetermined range and then first reaches the local maximum value and then reaches the first local minimum value is set as the polishing end point, the thickness of the barrier layer can be reliably reduced to the predetermined thickness. The polishing can be terminated when the condition becomes.
  • a sixth invention for achieving the object is any one of the first invention to the third invention, wherein the measured film layer state is a polishing end point, and the transmitted light intensity is previously determined.
  • the feature is characterized in that the point when the first maximum value is reached after the minimum value is first reached after deviating from the predetermined range is the polishing end point.
  • polishing is often terminated while leaving the barrier layer by a predetermined thickness.
  • the interference and diffraction effects cause the intensity of the transmitted light and the thickness of the barrier layer to deviate from a predetermined range, first reach a minimum value, and then to the first maximum value. If the point in time becomes the polishing end point, the polishing can be surely stopped when the thickness of the barrier layer reaches a predetermined thickness.
  • a seventh invention for achieving the above object is any one of the first invention to the third invention, wherein the measured film layer state is a polished state, and the reflected light intensity or the transmitted light The polishing state is measured from the temporal change rate of the reflected light intensity or the transmitted light intensity at a position near a local maximum value or a local minimum value after the intensity deviates from a predetermined range. This is a method for measuring the state of the film layer.
  • the reflected light intensity or transmitted light intensity The temporal change rate of the reflected light intensity or the transmitted light intensity at a position near a local maximum value or a local minimum value after deviating from a predetermined range is large.
  • the intensity or transmitted light intensity is plotted on the vertical axis, the waveform becomes sharp.
  • the temporal change rate of the reflected light intensity or the transmitted light intensity is reduced, and the time axis is represented by the horizontal axis.
  • the waveform becomes gentle. Therefore, the temporal change rate of the reflected light intensity or the transmitted light intensity at a position near the local maximum value or the minimum value after the reflected light intensity or the transmitted light intensity deviates from a predetermined range is calculated. If observed, the polishing state can be measured.
  • the same effect can be obtained by observing the change in the peak height and the peak width of the local maximum value and the local minimum value other than the temporal change rate. This is equivalent to observing the temporal change rate of reflected light intensity or transmitted light intensity.
  • An eighth invention for achieving the above object is a multilayer film having a film layer structure, wherein a part of the multilayer film has a thin film having an antireflection effect by an interference / diffraction effect.
  • An apparatus for irradiating the multilayer film with light a device for temporarily measuring reflected light or transmitted light from the multilayer film; Means for detecting the state of the film layer based on the intensity of the reflected light or the intensity of the transmitted light after the intensity of the transmitted light deviates from a predetermined range.
  • a ninth aspect of the present invention is the eighth aspect of the present invention, wherein the light used for the measurement is monochromatic light.
  • a tenth invention for achieving the above object is the eighth invention, Using light having a continuous spectrum for the measurement, the means for detecting the state of the film layer is characterized in that the average or integral value of the reflection intensity or the transmission intensity of light in a predetermined range of wavelength is determined by the reflected light intensity or the transmission value. It is characterized by being used as light intensity.
  • a eleventh invention for achieving the above object is any one of the eighth invention to the tenth invention, wherein the film layer state to be measured is one of the multilayer films being polished.
  • the thickness of the thin film having the antireflection action is characterized in that:
  • a twenty-second invention for achieving the above object is any one of the eighth to tenth inventions, wherein the measured film layer state is a polishing end point,
  • the means for detecting is characterized in that a point at which the reflected light intensity firstly reaches a maximum value after deviating from a predetermined range and then reaches a first minimum value is a polishing end point. It is.
  • a thirteenth invention for achieving the above object is any one of the eighth invention to the tenth invention, wherein the measured film layer state is a polishing end point, and the film layer state
  • the means for measuring the peak value is characterized in that a point at which the transmitted light intensity first deviates from a predetermined range and then reaches a local minimum value and then reaches a first maximum value is set as a polishing end point. Things.
  • a fourteenth invention for achieving the above object is any one of the eighth invention to the tenth invention, wherein the measured film layer state is a polished state, and the film layer state is detected.
  • These eighth to fourteenth inventions are apparatuses corresponding to the first to seventh inventions, respectively, and each of them is the first to seventh inventions. By implementing the seven inventions, it is possible to achieve the functions and effects described in each invention.
  • a fifteenth invention for achieving the above object is a polishing apparatus comprising the film layer state measuring device according to any one of the eighth invention to the fifteenth invention.
  • the apparatus for measuring a film layer state according to any one of the eighth invention to the fourteenth invention since the apparatus for measuring a film layer state according to any one of the eighth invention to the fourteenth invention is provided, the state of the film layer is measured during the polishing step, and an action corresponding thereto is taken, for example.
  • the polishing conditions can be changed or the polishing can be completed.
  • performing measurement during the polishing process means not only performing measurement while performing polishing, as in so-called in-situ measurement, but also temporarily suspending polishing during a series of polishing processes, It also includes doing. This is because even in this case, the state of change of the reflected light or transmitted light with respect to the polishing time can be observed.
  • a sixteenth invention for achieving the above object has a step of polishing a multilayer film formed on a wafer by using the polishing apparatus of the fifteenth invention. It is a manufacturing method.
  • polishing can be performed while measuring the state of the film layer of the thin film formed on the wafer, so that the polishing can be performed accurately, and as a result, for example, the yield can be improved, It is possible to manufacture semiconductor devices with high accuracy.
  • FIG. 1 is a schematic diagram showing a state in which a film layer state measuring device as an example of an embodiment of the present invention is attached to a CMP polisher.
  • FIG. 2 is a block diagram showing an outline of an optical system of the film layer state measuring device shown in FIG.
  • FIG. 3 is a flowchart showing a semiconductor device manufacturing process as an example of an embodiment of the present invention.
  • FIG. 4 is a schematic diagram of a laminated structure of a wafer to be polished used in the example.
  • FIG. 5 is a diagram illustrating a change over time in the reflectance in the first embodiment.
  • FIG. 6 is a diagram illustrating a change over time in the reflectance in the second embodiment.
  • FIG. 7 is a diagram illustrating a change over time in reflectance in the third embodiment.
  • FIG. 1 is a schematic diagram showing a state in which a film layer state measuring device according to an embodiment of the present invention is attached to a CMP polishing apparatus.
  • FIG. 2 is a diagram showing a film layer state measuring device shown in FIG. It is a block diagram which shows the outline of the optical system of an apparatus.
  • a wafer 2 to be polished is held on a polishing head 1.
  • a polishing pad 3 for polishing the wafer 2 is fixed to a surface plate 4.
  • the platen 4 is rotating at an angular speed W T, and the polishing head 1 is also rotating at an angular speed W H and oscillating 32 while pressing the wafer 2 against the polishing pad 3.
  • the wafer 2 is polished by the polishing pad 3 while the slurry 31 is supplied from the slurry supply mechanism 30.
  • the polishing pad 3 and the surface plate 4 include a light transmitting window 5, and a transparent quartz glass 21 is fitted into the light transmitting window 5 on the side of the polishing pad 3.
  • the optical system 10 of the film layer state measuring device 20 is disposed below the translucent window 5.
  • the optical system 10 omits optical members such as a lens and a diffraction grating ( irradiation light emitted from an irradiation light source 7 is applied to the surface of the wafer 2 through a light-transmitting window 5, and The reflected signal light from 2 is guided to the optical system 10 through the translucent window 5. After being reflected by the beam splitter 12, the light is received by the light receiving unit 6 and its intensity is measured.
  • reference numeral 7 denotes an irradiation light source.
  • a light source emitting a multi-component wavelength is used.
  • a white light source is preferable, and a white LED lamp, a xenon lamp, a halogen lamp, and a tungsten lamp are particularly preferable.
  • the light emitted from the irradiation light source 7 is converted into a parallel light beam by the lens 9, the light beam size is adjusted by the slit 22, and passes through the lens 11. Then, the light is transmitted through the beam splitter 12 and the lens 13 and further transmitted through the transparent quartz glass 21 of the light transmitting window 5 shown in FIG.
  • the optical system is adjusted so that the spatial coherence length is larger than the minimum repeating unit size of the device pattern on the wafer 2.
  • the reflected signal light from the wafer 2 again passes through the transparent glass 21 of the light transmitting window 5 shown in FIG. 1, passes through the lens 13, and is reflected by the beam splitter 12. .
  • the light passes through the lens 14, is reflected by the mirror 15, and is condensed on the opening of the pinhole 17 by the lens 16.
  • the reflected signal light is filtered by the pinhole 17 to remove scattered light, first-order or higher diffracted light, and the like, passes through the lens 18 and is projected on the diffraction grating 19.
  • the light is wavelength-resolved by the diffraction grating 19 so that light of different wavelengths is directed in different directions, enters the linear sensor 6, and the spectral characteristics of the reflected light are detected.
  • This spectral characteristic signal is sent to the signal processing computer 8 shown in FIG. 1, and the signal processing computer 8 observes the reflected light intensity from the spectral characteristic signal and determines a characteristic change thereof.
  • the change in the reflected light intensity may be determined by focusing on the spectroscopic light of a specific wavelength, or the average change in the reflected light intensity in a specific range of wavelengths may be determined.
  • the spectroscope can be omitted.
  • a plurality of monochromatic light sources having different wavelengths may be used as the light source. Instead of measuring through the translucent window 5 as shown in Fig.
  • the amplitude of the swinging motion of the polishing head is increased, the wafer is protruded from the polishing pad, and light is applied to the protruding portion.
  • the reflected light may be measured.
  • the arrangement of the irradiation light source and a part of the optical system may be changed to irradiate illumination light from the back surface of the wafer (in this case, transmitted light may be measured). Good, but in that case an infrared light source is needed.
  • the reflectivity of the wafer surface during polishing changes according to the film thickness.
  • the thin film is composed of one layer, if the surface film thickness is d, the refractive index is n, and the wavelength of irradiation and reflected light is given, the effect of wave photodynamic interference
  • n d ⁇ / 4 '(1)
  • the reflected light intensity is the lowest.
  • the transmittance behaves in the opposite manner to the above-mentioned reflectance, so that when the equation (1) is satisfied, the transmitted light intensity is maximized.
  • the reflected light intensity becomes the minimum at the film thickness of 50 nm. Therefore, it is possible to determine that the film thickness is 50 nm by tracking the change in the reflected light intensity and identifying the lowest saddle part.
  • the film is a multilayer film or a pattern formed on the multilayer film
  • the film includes a thin film having an antireflection effect due to such interference and diffraction phenomena
  • polishing of the thin film or the upper layer film is performed.
  • the residual film thickness can be measured by observing the reflectance or the transmittance.
  • the film layer state measuring device using the above-described measuring method according to the embodiment is provided not only in a polishing apparatus or the like to be used for measuring a process state such as a polishing end point or a remaining film thickness, but also for a wafer or the like alone. It can be used as a film thickness gauge for measuring the film thickness on the substrate. Further, it can also be used for detecting the end point of other removal processes such as ion etching and the like, and the film formation process such as CVD and sputtering.
  • the process end point referred to here includes not only the end point of the process in a general thin film removal process, but also the end point of an intermediate process such as timing at which the removal process proceeds to a different material layer.
  • FIG. 3 is a flowchart showing a semiconductor device manufacturing process.
  • an appropriate processing step is selected from the following steps S201 to S204. According to the selection, the process proceeds to any of steps S201 to S204.
  • Step S201 is an oxidation step of oxidizing the surface of the silicon wafer.
  • Step S202 is a CVD process for forming an insulating film on the surface of the silicon wafer by CVD or the like.
  • Step S203 is a step on the silicon wafer. This is an electrode film forming step of forming an electrode film by a process such as vapor deposition.
  • Step S204 is an ion implantation step of implanting ions into the silicon wafer.
  • Step S209 After the CVD step or the electrode film forming step, the process proceeds to step S209, and it is determined whether the CMP step is performed. If not, proceed to step S206, otherwise, proceed to step S205.
  • Step S205 is a CMP step.
  • the polishing apparatus of the present invention is used to planarize an interlayer insulating film, form a damascene by polishing a metal film on the surface of a semiconductor device, and the like.
  • Step S206 is a photolithography process.
  • a resist is applied to a silicon wafer, a circuit pattern is printed on a silicon wafer by exposure using an exposure apparatus, and development of the exposed silicon wafer is performed.
  • the next step S207 is an etching step of removing portions other than the developed resist image by etching, and then removing the resist to remove unnecessary resist after the etching.
  • step S208 it is determined whether or not all necessary processes have been completed. If not, the process returns to step S200, and the described steps are repeated to form a circuit pattern on the silicon wafer. . If it is determined in step S208 that all the processes have been completed, the process ends.
  • a silicon wafer in which the laminated structure shown in Fig. 4 is formed on a TEG wafer that has been subjected to pattern processing imitating an actual device is polished by a CMP polishing machine as shown in Fig. 1, and the end point of the polishing is detected. Tried.
  • the irradiation light source 7 Using a white LED lamp as the irradiation light source 7 with the CMP polishing machine shown in Fig. 1, the light radiated from the white LED lamp 7 Irradiated at spot diameters of Since the wafer 2 is rotating during the polishing, the acquisition time of the reflected signal light is extended so that the spot of 3 mm ⁇ scans 2 cm inside from the outer periphery of the wafer 2 to cover a wide area on the wafer. The reflected light intensity for various device patterns was measured. A photodiode-type linear sensor (256 elements) was used as the light receiving unit 6, and the measurement wavelength range was 400 nm to 800 nm.
  • the wafer to be measured is an 8-inch silicon wafer on which an ILD or STI structure pattern has been processed.
  • a silicon thermal oxide film SiO 2 layer 4 is formed on the upper surface of the silicon substrate 40. forming a 1 to a thickness of 15Rmi, formed to a thickness of about 150nm the SiN layer 4 2 as a barrier layer thereon, of about 500nm thickness of a Si 0 2 layer 4 3 as TEOS layer thereon to further plasma CVD Was used.
  • polishing pad 3 For polishing, a non-foamed hard polishing pad was used as polishing pad 3, and a polishing agent (slurry) using silica particles dispersed in an alkaline solvent was used, and a polishing pressure of about 350 g / cm 2 was used. Was polished. With the elapse of the polishing time, polishing was progressed in the order of the TEOS layer and the barrier layer.
  • a polishing agent slurry
  • silica particles dispersed in an alkaline solvent was used, and a polishing pressure of about 350 g / cm 2 was used.
  • the target of polishing completion was set when the thickness of the lower layer SiN reached 70 nm.
  • the Si substrate exists below the deposited SiN, and the reflected light component from the Si substrate is the strongest.
  • the barrier layer SiN exhibits an anti-reflection effect by an interference / diffraction effect when the thickness is expressed by the expression (1). Therefore, when the refractive index is known to be 2.0, and when the barrier layer is considered as a thin film, the refractive index is known to be 2.0, so from the relationship shown in the equation (1), the thickness at which the reflection intensity becomes the minimum at the wavelength of 550 nm is: It is 68.75nm and can be seen as almost 70nm.
  • the end point of the polishing can be detected by judging the time when the reflection intensity becomes minimum. Even if the target film thickness is different, the end can be determined by adjusting the observed wavelength according to the relationship shown in (1). Similarly, given a given wavelength, (1) The film thickness can be measured from the relationship of the formula.
  • Figure 5 shows how the reflected signal actually changes at a wavelength of 550 nm.
  • the vertical axis represents the reflected light intensity in the form of reflectivity
  • the horizontal axis represents the progress of the polishing time from left to right. Therefore, the graph shows the change over time of the reflectance at a wavelength of 550 mn. Furthermore, the end point of the process at which the reflectance value becomes the lowest is indicated by an arrow. When the remaining film thickness at this point was separately measured by a film thickness measuring device, it was confirmed that the average film thickness of the SiN layer was polished with the target value of 70 nm as a median value.
  • the reflectance fluctuates due to interference and diffraction caused by the multilayer film and pattern, but the fluctuation width is small, and in the example shown in Fig. 5, , Between 0.17 and 0.19.
  • the polishing approaches the thin film (SiN barrier layer 42) having the anti-reflection effect by the interference and diffraction effect
  • the reflectivity once starts to increase, and the polishing of the thin film having the anti-reflection effect by the interference and diffraction effect proceeds. It continues to rise, eventually reaches a local maximum, and then is processed to the first local minimum. This first minimum corresponds to the polishing end point. Therefore, for example, in the example of Fig.
  • the steepness of the maximum value after exceeding the reflectance range of 0.17 to 0.19 in FIG. 5, that is, the rate of change of the reflectance with respect to time, is a predetermined value during normal polishing. Although it is kept and steep, the results of the experiment show that the polishing becomes gentle when polishing is not performed normally due to wear of the polishing pad. Therefore, by observing the rate of change of the reflectance with respect to time near this maximum value, it is possible to detect whether or not the polishing is normally performed.
  • an LED lamp that emits monochromatic light having a wavelength of 550 nm may be used as the illumination light source 7, and in that case, the spectroscope 19 becomes unnecessary.
  • the target of polishing completion was set when the thickness of the barrier layer SiN became 50 nm, and the temporal change of the reflectance at a wavelength of 400 mn was observed.
  • Figure 6 shows the results.
  • the reflectance fluctuates greatly before reaching the polishing end point, and it is extremely difficult to determine which minimum point is to be the polishing end point. is there.
  • the time-dependent change pattern of the reflectance greatly differs depending on the wavelength used.Therefore, the polishing end point must be determined for each film layer structure and each pattern formed thereon. It is necessary to select an appropriate wavelength to detect.
  • an LED lamp that emits monochromatic light having a wavelength of 400 nm may be used as the illumination light source 7, and in that case, the spectroscope 19 becomes unnecessary.
  • the observation wavelength was set to 400 to 600 nm (center wavelength 500 nm), and the average value of the reflectance values in that range was obtained.
  • Figure 7 shows the change over time.
  • the end point of the polishing process is the barrier layer SiN It was determined that the film thickness was 60 ⁇ .
  • the appearance of the lowest saddle portion is simple and clear compared to the change in the reflectance in the second embodiment, and a result that is hard to be erroneously determined is obtained.
  • the average value and integral value of the reflectance in a predetermined wavelength range are obtained in this way, and the obtained values are used to determine the polishing end point and the polishing end point in the same manner as the method shown in Embodiment 1.
  • the end point detection as shown in Fig. 7 can be clearly performed with light in the same wavelength range. It is known that an easy pattern can be obtained. Therefore, it is more convenient to obtain the average value and the integral value of the reflectance in a predetermined wavelength range and use the obtained value without changing the wavelength used according to the specifications of the wafer.
  • the film layer state measuring method, the film layer state measuring apparatus, and the polishing apparatus of the present invention can be used, for example, in a wafer polishing step in a semiconductor manufacturing process.
  • the method of manufacturing a semiconductor device of the present invention Can be used for manufacturing.

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  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Constituent Portions Of Griding Lathes, Driving, Sensing And Control (AREA)
  • Length Measuring Devices By Optical Means (AREA)

Abstract

L'invention concerne un dispositif de polissage permettant de polir un film multicouche qui comprend des couches minces présentant un pouvoir partiel de limitation de réflexion grâce à des effets d'interférence et de réfraction ; le pouvoir de réflexion de ce film varie très faiblement, même si le polissage est avancé, tant que la surface polie n'atteint pas l'épaisseur dite de film mince ; à mesure que la surface polie approche de cette épaisseur, son pouvoir de réflexion commence à varier fortement, et atteint une valeur maximum à un point spécifique avant d'atteindre ensuite une valeur minimum. Par conséquent, comme il existe une corrélation très étroite entre le pouvoir de réflexion du film et son épaisseur après que le pouvoir de réflexion a commencé à varier fortement, on peut obtenir une mesure de l'épaisseur du film et du point final de polissage en mesurant le pouvoir de réflexion du film.
PCT/JP2002/012048 2001-12-03 2002-11-19 Procede et appareil pour mesurer l'etat d'une couche de film, dispositif de polissage et procede de fabrication de dispositif semi-conducteur WO2003049166A1 (fr)

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JP2001-368120 2001-12-03
JP2001368120A JP2003168666A (ja) 2001-12-03 2001-12-03 膜層状態測定方法、膜層状態測定装置、研磨装置及び半導体デバイスの製造方法

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US7998358B2 (en) 2006-10-31 2011-08-16 Applied Materials, Inc. Peak-based endpointing for chemical mechanical polishing
KR101107507B1 (ko) * 2009-03-23 2012-01-31 에스엔유 프리시젼 주식회사 반사도분포곡선의 모델링방법 및 이를 이용하는 두께 측정방법, 두께 측정 반사계
JP5968783B2 (ja) * 2009-11-03 2016-08-10 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ スペクトルの等高線図のピーク位置と時間の関係を使用する終点方法
JP5581798B2 (ja) * 2010-05-12 2014-09-03 株式会社デンソー 半導体装置の製造方法
TWI566310B (zh) * 2013-08-13 2017-01-11 聯華電子股份有限公司 控制臨界電壓的方法及半導體元件的製造方法
JP6399873B2 (ja) * 2014-09-17 2018-10-03 株式会社荏原製作所 膜厚信号処理装置、研磨装置、膜厚信号処理方法、及び、研磨方法
KR102580487B1 (ko) * 2018-06-18 2023-09-21 주식회사 케이씨텍 패드 모니터링 장치 및 이를 포함하는 패드 모니터링 시스템, 패드 모니터링 방법

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JP2000033562A (ja) * 1998-07-21 2000-02-02 Dainippon Screen Mfg Co Ltd 終点検出装置、終点検出方法
JP2000117623A (ja) * 1998-10-16 2000-04-25 Tokyo Seimitsu Co Ltd ウェーハ研磨装置
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JPH1133901A (ja) * 1997-07-18 1999-02-09 Nikon Corp ウェハ研磨装置
JP2000033562A (ja) * 1998-07-21 2000-02-02 Dainippon Screen Mfg Co Ltd 終点検出装置、終点検出方法
JP2000117623A (ja) * 1998-10-16 2000-04-25 Tokyo Seimitsu Co Ltd ウェーハ研磨装置
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