WO2003046992A1 - Procede de production d'une tranche de soi - Google Patents
Procede de production d'une tranche de soi Download PDFInfo
- Publication number
- WO2003046992A1 WO2003046992A1 PCT/JP2002/011166 JP0211166W WO03046992A1 WO 2003046992 A1 WO2003046992 A1 WO 2003046992A1 JP 0211166 W JP0211166 W JP 0211166W WO 03046992 A1 WO03046992 A1 WO 03046992A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- layer
- soi
- single crystal
- crystal substrate
- silicon single
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
- H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
- H01L21/76254—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques with separation/delamination along an ion implanted layer, e.g. Smart-cut, Unibond
Definitions
- An object of the present invention is to reduce both the film thickness uniformity within a wafer and the film thickness uniformity between wafers to a sufficiently small level even when the required film thickness level of the SOI layer is very small. It is possible to suppress quality variation and improve manufacturing yield even when processing into ultra-fine or highly integrated CMOS LSIs. It is an object of the present invention to provide a method of manufacturing an SOI wafer. Disclosure of the invention
- a method for producing an SOI wafer of the present invention comprises:
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Weting (AREA)
- Recrystallisation Techniques (AREA)
Abstract
Selon l'invention, une seconde de couche Si (23), une première couche de SiGe (22) et une première couche de Si (21) sont formées de façon à constituer un stratifié épitaxial, dans cet ordre, sur une tranche (2) à souder. Une couche à haute concentration d'hydrogène est formée dans la seconde couche de Si (23) par implantation d'ions d'hydrogène, et un traitement thermique de liaison et une séparation sont effectués. Un corps stratifié, formant une couche épitaxiale à séparer, comprenant la première couche de Si (21), la première couche de SiGe (22) et la seconde couche de Si (23) séparées est formé de façon à constituer une seule pièce liée sur une couche d'oxyde de silicium (3). La seconde couche de Si (23) ainsi séparée est attaquée de façon sélective, la première couche de SiGe (22a) servant de couche d'arrêt d'attaque. Ainsi, une tranche de SOI peut être produite de sorte qu'à la fois l'uniformité d'épaisseur du film d'une tranche et celle de tranches peuvent être réduites à une valeur suffisamment basse, même si l'épaisseur de film requise pour la couche SOI est d'une valeur très basse.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2001-364907 | 2001-11-29 | ||
JP2001364907A JP2003168789A (ja) | 2001-11-29 | 2001-11-29 | Soiウェーハの製造方法 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2003046992A1 true WO2003046992A1 (fr) | 2003-06-05 |
Family
ID=19175028
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2002/011166 WO2003046992A1 (fr) | 2001-11-29 | 2002-10-28 | Procede de production d'une tranche de soi |
Country Status (2)
Country | Link |
---|---|
JP (1) | JP2003168789A (fr) |
WO (1) | WO2003046992A1 (fr) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2006043471A1 (fr) * | 2004-10-20 | 2006-04-27 | Shin-Etsu Handotai Co., Ltd. | Procede de fabrication de tranches semiconductrices |
WO2006051730A1 (fr) * | 2004-11-10 | 2006-05-18 | Shin-Etsu Handotai Co., Ltd. | Procédé de fabrication de plaquette semi-conductrice |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6852652B1 (en) * | 2003-09-29 | 2005-02-08 | Sharp Laboratories Of America, Inc. | Method of making relaxed silicon-germanium on glass via layer transfer |
FR2860340B1 (fr) * | 2003-09-30 | 2006-01-27 | Soitec Silicon On Insulator | Collage indirect avec disparition de la couche de collage |
US7265030B2 (en) * | 2004-07-20 | 2007-09-04 | Sharp Laboratories Of America, Inc. | Method of fabricating silicon on glass via layer transfer |
FR2880988B1 (fr) * | 2005-01-19 | 2007-03-30 | Soitec Silicon On Insulator | TRAITEMENT D'UNE COUCHE EN SI1-yGEy PRELEVEE |
WO2006077216A2 (fr) * | 2005-01-19 | 2006-07-27 | S.O.I.Tec Silicon On Insulator Technologies | Formation et traitement d'une structure en sige |
JP5128761B2 (ja) * | 2005-05-19 | 2013-01-23 | 信越化学工業株式会社 | Soiウエーハの製造方法 |
EP2498280B1 (fr) * | 2011-03-11 | 2020-04-29 | Soitec | DRAM avec des condensateurs en tranchée et transistors logiques à polarisation de substrat intégrés sur un substrat SOI comprenant une couche semiconductrice intrinsèque et procédé de fabrication correspondant |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO1991005366A1 (fr) * | 1989-09-29 | 1991-04-18 | The Government Of The United States Of America, As Represented By The Secretary Of The Department Of The Navy | Procede de fabrication d'une couche mince de silicium sur isolateur |
EP0843344A1 (fr) * | 1996-11-15 | 1998-05-20 | Canon Kabushiki Kaisha | Procédé de transfert d'une couche semiconductrice par l'utilisation de la technologie silicium sur isolant (SOI) |
US5882987A (en) * | 1997-08-26 | 1999-03-16 | International Business Machines Corporation | Smart-cut process for the production of thin semiconductor material films |
JP2001217430A (ja) * | 1999-11-26 | 2001-08-10 | Toshiba Corp | 半導体基板の製造方法およびこれにより製造された半導体基板 |
JP2001284558A (ja) * | 2000-03-31 | 2001-10-12 | Fujitsu Ltd | 積層半導体基板及びその製造方法並びに半導体装置 |
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2001
- 2001-11-29 JP JP2001364907A patent/JP2003168789A/ja active Pending
-
2002
- 2002-10-28 WO PCT/JP2002/011166 patent/WO2003046992A1/fr active Application Filing
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO1991005366A1 (fr) * | 1989-09-29 | 1991-04-18 | The Government Of The United States Of America, As Represented By The Secretary Of The Department Of The Navy | Procede de fabrication d'une couche mince de silicium sur isolateur |
EP0843344A1 (fr) * | 1996-11-15 | 1998-05-20 | Canon Kabushiki Kaisha | Procédé de transfert d'une couche semiconductrice par l'utilisation de la technologie silicium sur isolant (SOI) |
US5882987A (en) * | 1997-08-26 | 1999-03-16 | International Business Machines Corporation | Smart-cut process for the production of thin semiconductor material films |
JP2001217430A (ja) * | 1999-11-26 | 2001-08-10 | Toshiba Corp | 半導体基板の製造方法およびこれにより製造された半導体基板 |
JP2001284558A (ja) * | 2000-03-31 | 2001-10-12 | Fujitsu Ltd | 積層半導体基板及びその製造方法並びに半導体装置 |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2006043471A1 (fr) * | 2004-10-20 | 2006-04-27 | Shin-Etsu Handotai Co., Ltd. | Procede de fabrication de tranches semiconductrices |
JP2006120782A (ja) * | 2004-10-20 | 2006-05-11 | Shin Etsu Handotai Co Ltd | 半導体ウェーハの製造方法 |
JP4617820B2 (ja) * | 2004-10-20 | 2011-01-26 | 信越半導体株式会社 | 半導体ウェーハの製造方法 |
WO2006051730A1 (fr) * | 2004-11-10 | 2006-05-18 | Shin-Etsu Handotai Co., Ltd. | Procédé de fabrication de plaquette semi-conductrice |
JP2006140187A (ja) * | 2004-11-10 | 2006-06-01 | Shin Etsu Handotai Co Ltd | 半導体ウェーハの製造方法 |
US7959731B2 (en) | 2004-11-10 | 2011-06-14 | Shin-Etsu Handotai Co., Ltd. | Method for producing semiconductor wafer |
Also Published As
Publication number | Publication date |
---|---|
JP2003168789A (ja) | 2003-06-13 |
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