WO2003030270A1 - Dispositif recepteur de lumiere a fentes et lecteur de disque optique dans lequel il est integre - Google Patents

Dispositif recepteur de lumiere a fentes et lecteur de disque optique dans lequel il est integre Download PDF

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Publication number
WO2003030270A1
WO2003030270A1 PCT/JP2002/008338 JP0208338W WO03030270A1 WO 2003030270 A1 WO2003030270 A1 WO 2003030270A1 JP 0208338 W JP0208338 W JP 0208338W WO 03030270 A1 WO03030270 A1 WO 03030270A1
Authority
WO
WIPO (PCT)
Prior art keywords
type
receiving device
optical disc
disc drive
split light
Prior art date
Application number
PCT/JP2002/008338
Other languages
English (en)
French (fr)
Inventor
Shigeki Hayashida
Tatsuya Morioka
Yoshihiko Tani
Mototaka Taneya
Isamu Ohkubo
Original Assignee
Sharp Kabushiki Kaisha
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Kabushiki Kaisha filed Critical Sharp Kabushiki Kaisha
Publication of WO2003030270A1 publication Critical patent/WO2003030270A1/ja

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/12—Heads, e.g. forming of the optical beam spot or modulation of the optical beam
    • G11B7/13—Optical detectors therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0216—Coatings
    • H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H01L31/02168—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells the coatings being antireflective or having enhancing optical properties for the solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells

Landscapes

  • Physics & Mathematics (AREA)
  • Sustainable Development (AREA)
  • Engineering & Computer Science (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Sustainable Energy (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Optics & Photonics (AREA)
  • Light Receiving Elements (AREA)
  • Optical Head (AREA)
PCT/JP2002/008338 2001-09-13 2002-08-19 Dispositif recepteur de lumiere a fentes et lecteur de disque optique dans lequel il est integre WO2003030270A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2001-278118 2001-09-13
JP2001278118A JP2003086828A (ja) 2001-09-13 2001-09-13 分割型受光素子およびそれを用いた光ディスク装置

Publications (1)

Publication Number Publication Date
WO2003030270A1 true WO2003030270A1 (fr) 2003-04-10

Family

ID=19102531

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2002/008338 WO2003030270A1 (fr) 2001-09-13 2002-08-19 Dispositif recepteur de lumiere a fentes et lecteur de disque optique dans lequel il est integre

Country Status (2)

Country Link
JP (1) JP2003086828A (ja)
WO (1) WO2003030270A1 (ja)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108231918A (zh) * 2017-12-30 2018-06-29 河北英沃泰电子科技有限公司 倒装砷化镓太阳能电池及其制备方法
CN108258062A (zh) * 2017-12-30 2018-07-06 河北英沃泰电子科技有限公司 砷化镓太阳能电池及其制备方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57155785A (en) * 1981-03-23 1982-09-25 Toshiba Corp Semiconductor photo-receiving element photodetector
JPS63151085A (ja) * 1986-12-16 1988-06-23 Sony Corp 受光装置
JPH02284478A (ja) * 1989-04-26 1990-11-21 Hamamatsu Photonics Kk 光電変換装置
JP2002141490A (ja) * 2000-11-02 2002-05-17 Nec Corp 固体撮像素子及びその製造方法

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08222755A (ja) * 1995-02-10 1996-08-30 Matsushita Electron Corp 光半導体装置およびその製造方法
JP3428828B2 (ja) * 1996-09-05 2003-07-22 シャープ株式会社 回路内蔵受光素子

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57155785A (en) * 1981-03-23 1982-09-25 Toshiba Corp Semiconductor photo-receiving element photodetector
JPS63151085A (ja) * 1986-12-16 1988-06-23 Sony Corp 受光装置
JPH02284478A (ja) * 1989-04-26 1990-11-21 Hamamatsu Photonics Kk 光電変換装置
JP2002141490A (ja) * 2000-11-02 2002-05-17 Nec Corp 固体撮像素子及びその製造方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108231918A (zh) * 2017-12-30 2018-06-29 河北英沃泰电子科技有限公司 倒装砷化镓太阳能电池及其制备方法
CN108258062A (zh) * 2017-12-30 2018-07-06 河北英沃泰电子科技有限公司 砷化镓太阳能电池及其制备方法

Also Published As

Publication number Publication date
JP2003086828A (ja) 2003-03-20

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