WO2003030237A1 - Procede de gravure - Google Patents

Procede de gravure Download PDF

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Publication number
WO2003030237A1
WO2003030237A1 PCT/JP2002/009129 JP0209129W WO03030237A1 WO 2003030237 A1 WO2003030237 A1 WO 2003030237A1 JP 0209129 W JP0209129 W JP 0209129W WO 03030237 A1 WO03030237 A1 WO 03030237A1
Authority
WO
WIPO (PCT)
Prior art keywords
film layer
gas
etching method
hard mask
forming
Prior art date
Application number
PCT/JP2002/009129
Other languages
English (en)
French (fr)
Inventor
Akitoshi Harada
Koichiro Inazawa
Original Assignee
Tokyo Electron Limited
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Limited filed Critical Tokyo Electron Limited
Priority to US10/490,107 priority Critical patent/US7125806B2/en
Publication of WO2003030237A1 publication Critical patent/WO2003030237A1/ja

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31105—Etching inorganic layers
    • H01L21/31111—Etching inorganic layers by chemical means
    • H01L21/31116—Etching inorganic layers by chemical means by dry-etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
    • H01L21/76807—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics for dual damascene structures
    • H01L21/76811—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics for dual damascene structures involving multiple stacked pre-patterned masks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
    • H01L21/76807—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics for dual damascene structures
    • H01L21/76813—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics for dual damascene structures involving a partial via etch

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Drying Of Semiconductors (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Electrodes Of Semiconductors (AREA)
PCT/JP2002/009129 2001-09-26 2002-09-06 Procede de gravure WO2003030237A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US10/490,107 US7125806B2 (en) 2001-09-26 2002-09-06 Etching method

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2001295186A JP5038567B2 (ja) 2001-09-26 2001-09-26 エッチング方法
JP2001-295186 2001-09-26

Publications (1)

Publication Number Publication Date
WO2003030237A1 true WO2003030237A1 (fr) 2003-04-10

Family

ID=19116662

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2002/009129 WO2003030237A1 (fr) 2001-09-26 2002-09-06 Procede de gravure

Country Status (3)

Country Link
US (1) US7125806B2 (ja)
JP (1) JP5038567B2 (ja)
WO (1) WO2003030237A1 (ja)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2004095551A1 (en) * 2003-03-31 2004-11-04 Tokyo Electron Limited Method and apparatus for multilayer photoresist dry development
WO2005088693A1 (en) * 2004-03-10 2005-09-22 Lam Research Corporation Line edge roughness control
US7344991B2 (en) 2002-12-23 2008-03-18 Tokyo Electron Limited Method and apparatus for multilayer photoresist dry development
US7547635B2 (en) 2002-06-14 2009-06-16 Lam Research Corporation Process for etching dielectric films with improved resist and/or etch profile characteristics
US8048325B2 (en) 2003-03-31 2011-11-01 Tokyo Electron Limited Method and apparatus for multilayer photoresist dry development
US8635971B2 (en) 2006-03-31 2014-01-28 Lam Research Corporation Tunable uniformity in a plasma processing system

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4295730B2 (ja) 2003-04-28 2009-07-15 富士通マイクロエレクトロニクス株式会社 半導体装置の製造方法
US7517801B1 (en) * 2003-12-23 2009-04-14 Lam Research Corporation Method for selectivity control in a plasma processing system
US7153778B2 (en) * 2004-02-20 2006-12-26 Micron Technology, Inc. Methods of forming openings, and methods of forming container capacitors
US8222155B2 (en) 2004-06-29 2012-07-17 Lam Research Corporation Selectivity control in a plasma processing system
JP4250584B2 (ja) * 2004-11-30 2009-04-08 アンリツ株式会社 半導体装置の製造方法
US8193096B2 (en) 2004-12-13 2012-06-05 Novellus Systems, Inc. High dose implantation strip (HDIS) in H2 base chemistry
JP4694249B2 (ja) * 2005-04-20 2011-06-08 株式会社日立ハイテクノロジーズ 真空処理装置及び試料の真空処理方法
US7244313B1 (en) * 2006-03-24 2007-07-17 Applied Materials, Inc. Plasma etch and photoresist strip process with intervening chamber de-fluorination and wafer de-fluorination steps
US7718543B2 (en) * 2006-12-08 2010-05-18 Applied Materials, Inc. Two step etching of a bottom anti-reflective coating layer in dual damascene application
US7563719B2 (en) * 2007-03-15 2009-07-21 Taiwan Semiconductor Manufacturing Co., Ltd. Dual damascene process
US7894927B2 (en) * 2008-08-06 2011-02-22 Tokyo Electron Limited Using Multi-Layer/Multi-Input/Multi-Output (MLMIMO) models for metal-gate structures
US8110342B2 (en) * 2008-08-18 2012-02-07 United Microelectronics Corp. Method for forming an opening
US8591661B2 (en) * 2009-12-11 2013-11-26 Novellus Systems, Inc. Low damage photoresist strip method for low-K dielectrics
SG178435A1 (en) * 2009-08-25 2012-03-29 Silverbrook Res Pty Ltd Method of removing photoresist and etch-residues from vias
US20110143548A1 (en) 2009-12-11 2011-06-16 David Cheung Ultra low silicon loss high dose implant strip
US8323877B2 (en) * 2010-11-16 2012-12-04 United Microelectronics Corp. Patterning method and method for fabricating dual damascene opening
TWI489550B (zh) * 2010-11-30 2015-06-21 United Microelectronics Corp 圖案化方法以及雙重金屬鑲嵌開口的製造方法
US9613825B2 (en) 2011-08-26 2017-04-04 Novellus Systems, Inc. Photoresist strip processes for improved device integrity
JP6177601B2 (ja) * 2013-06-25 2017-08-09 東京エレクトロン株式会社 クリーニング方法及び基板処理装置
JP2014131086A (ja) * 2014-04-10 2014-07-10 Hitachi High-Technologies Corp プラズマ処理方法
US9514954B2 (en) 2014-06-10 2016-12-06 Lam Research Corporation Peroxide-vapor treatment for enhancing photoresist-strip performance and modifying organic films
JP6339961B2 (ja) * 2015-03-31 2018-06-06 東京エレクトロン株式会社 エッチング方法

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000036484A (ja) * 1998-05-11 2000-02-02 Tokyo Electron Ltd プラズマ処理方法
EP1030353A1 (fr) * 1999-02-17 2000-08-23 France Telecom Procédé de gravure anisotrope par plasma gazeux d'un matériau polymère diélectrique organique
US6180518B1 (en) * 1999-10-29 2001-01-30 Lucent Technologies Inc. Method for forming vias in a low dielectric constant material
JP2001118825A (ja) * 1999-10-19 2001-04-27 Tokyo Electron Ltd エッチング方法
US6251774B1 (en) * 1998-11-10 2001-06-26 Mitsubishi Denki Kabushiki Kaisha Method of manufacturing a semiconductor device

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6683002B1 (en) * 2000-08-10 2004-01-27 Chartered Semiconductor Manufacturing Ltd. Method to create a copper diffusion deterrent interface
US6632707B1 (en) * 2001-01-31 2003-10-14 Advanced Micro Devices, Inc. Method for forming an interconnect structure using a CVD organic BARC to mitigate via poisoning
US6841483B2 (en) * 2001-02-12 2005-01-11 Lam Research Corporation Unique process chemistry for etching organic low-k materials
US6617257B2 (en) * 2001-03-30 2003-09-09 Lam Research Corporation Method of plasma etching organic antireflective coating
US6605545B2 (en) * 2001-06-01 2003-08-12 United Microelectronics Corp. Method for forming hybrid low-K film stack to avoid thermal stress effect

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000036484A (ja) * 1998-05-11 2000-02-02 Tokyo Electron Ltd プラズマ処理方法
US6251774B1 (en) * 1998-11-10 2001-06-26 Mitsubishi Denki Kabushiki Kaisha Method of manufacturing a semiconductor device
EP1030353A1 (fr) * 1999-02-17 2000-08-23 France Telecom Procédé de gravure anisotrope par plasma gazeux d'un matériau polymère diélectrique organique
JP2001118825A (ja) * 1999-10-19 2001-04-27 Tokyo Electron Ltd エッチング方法
US6180518B1 (en) * 1999-10-29 2001-01-30 Lucent Technologies Inc. Method for forming vias in a low dielectric constant material

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
MASANAGA FUKASAWA ET AL.: "Organic Low-k film etching using N-H plasma", PROC. OF SYMPOSIUM ON DRY PROCESS, 1999, pages 221 - 226, XP002963473 *

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7547635B2 (en) 2002-06-14 2009-06-16 Lam Research Corporation Process for etching dielectric films with improved resist and/or etch profile characteristics
US7344991B2 (en) 2002-12-23 2008-03-18 Tokyo Electron Limited Method and apparatus for multilayer photoresist dry development
WO2004095551A1 (en) * 2003-03-31 2004-11-04 Tokyo Electron Limited Method and apparatus for multilayer photoresist dry development
US8048325B2 (en) 2003-03-31 2011-11-01 Tokyo Electron Limited Method and apparatus for multilayer photoresist dry development
WO2005088693A1 (en) * 2004-03-10 2005-09-22 Lam Research Corporation Line edge roughness control
US8635971B2 (en) 2006-03-31 2014-01-28 Lam Research Corporation Tunable uniformity in a plasma processing system

Also Published As

Publication number Publication date
JP5038567B2 (ja) 2012-10-03
US20040209469A1 (en) 2004-10-21
US7125806B2 (en) 2006-10-24
JP2003100718A (ja) 2003-04-04

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