WO2003026013A1 - Dispositif semi-conducteur - Google Patents

Dispositif semi-conducteur Download PDF

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Publication number
WO2003026013A1
WO2003026013A1 PCT/JP2002/009384 JP0209384W WO03026013A1 WO 2003026013 A1 WO2003026013 A1 WO 2003026013A1 JP 0209384 W JP0209384 W JP 0209384W WO 03026013 A1 WO03026013 A1 WO 03026013A1
Authority
WO
WIPO (PCT)
Prior art keywords
fets
fet
resistors
reduced
buffer layer
Prior art date
Application number
PCT/JP2002/009384
Other languages
English (en)
French (fr)
Inventor
Tadayoshi Nakatsuka
Toshiharu Tambo
Takahiro Kitazawa
Akiyoshi Tamura
Katsushi Tara
Original Assignee
Matsushita Electric Industrial Co., Ltd.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co., Ltd. filed Critical Matsushita Electric Industrial Co., Ltd.
Priority to KR10-2003-7007232A priority Critical patent/KR100517531B1/ko
Priority to US10/416,261 priority patent/US7012285B2/en
Priority to EP02765528A priority patent/EP1427017A4/en
Publication of WO2003026013A1 publication Critical patent/WO2003026013A1/ja

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/095—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being Schottky barrier gate field-effect transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0605—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits made of compound material, e.g. AIIIBV
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
    • H01L27/0617—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type
    • H01L27/0629—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type in combination with diodes, or resistors, or capacitors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/0802—Resistors only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/0805—Capacitors only
    • H01L27/0811—MIS diodes

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Electronic Switches (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
PCT/JP2002/009384 2001-09-14 2002-09-12 Dispositif semi-conducteur WO2003026013A1 (fr)

Priority Applications (3)

Application Number Priority Date Filing Date Title
KR10-2003-7007232A KR100517531B1 (ko) 2001-09-14 2002-09-12 반도체 장치
US10/416,261 US7012285B2 (en) 2001-09-14 2002-09-12 Semiconductor device
EP02765528A EP1427017A4 (en) 2001-09-14 2002-09-12 SEMICONDUCTOR DEVICE

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2001280061A JP2003086767A (ja) 2001-09-14 2001-09-14 半導体装置
JP2001-280061 2001-09-14

Publications (1)

Publication Number Publication Date
WO2003026013A1 true WO2003026013A1 (fr) 2003-03-27

Family

ID=19104125

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2002/009384 WO2003026013A1 (fr) 2001-09-14 2002-09-12 Dispositif semi-conducteur

Country Status (5)

Country Link
US (1) US7012285B2 (ja)
EP (1) EP1427017A4 (ja)
JP (1) JP2003086767A (ja)
KR (1) KR100517531B1 (ja)
WO (1) WO2003026013A1 (ja)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005006072A (ja) 2003-06-12 2005-01-06 Matsushita Electric Ind Co Ltd 高周波スイッチ装置および半導体装置
JP4559772B2 (ja) * 2004-05-31 2010-10-13 パナソニック株式会社 スイッチ回路
JP4854980B2 (ja) * 2005-03-30 2012-01-18 住友電工デバイス・イノベーション株式会社 スイッチ回路及び半導体装置の製造方法
JP5112620B2 (ja) * 2005-05-31 2013-01-09 オンセミコンダクター・トレーディング・リミテッド 化合物半導体装置
JP4538016B2 (ja) * 2007-03-23 2010-09-08 パナソニック株式会社 高周波スイッチ装置および半導体装置
US11239802B2 (en) 2019-10-02 2022-02-01 Wolfspeed, Inc. Radio frequency transistor amplifiers having engineered instrinsic capacitances for improved performance

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05259192A (ja) * 1992-03-13 1993-10-08 Toshiba Corp ヘテロ接合型電界効果トランジスタおよびその製造方法
JPH06132310A (ja) * 1992-10-15 1994-05-13 Hitachi Ltd 半導体装置およびそれを用いた集積回路
EP0613191A2 (en) * 1993-02-26 1994-08-31 Sumitomo Electric Industries, Limited Channel structure for field effect transistor
EP0700161A2 (en) * 1994-08-29 1996-03-06 Hitachi, Ltd. Low distortion switch
JPH11283995A (ja) * 1998-03-30 1999-10-15 Hitachi Ltd 半導体装置およびその製造方法

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61272964A (ja) * 1985-05-28 1986-12-03 Fujitsu Ltd 半導体抵抗素子
JPH01171279A (ja) * 1987-12-25 1989-07-06 Mitsubishi Monsanto Chem Co 半導体装置
US5196358A (en) * 1989-12-29 1993-03-23 The United States Of America As Represented By The Secretary Of The Navy Method of manufacturing InP junction FETS and junction HEMTS using dual implantation and double nitride layers
WO1995034913A1 (en) * 1994-06-16 1995-12-21 Anadigics, Inc. Bootstrapped-gate field effect transistors and circuits thereof
JP2687897B2 (ja) * 1994-10-13 1997-12-08 日本電気株式会社 電界効果型トランジスタ及びその製造方法
US5903178A (en) * 1994-12-16 1999-05-11 Matsushita Electronics Corporation Semiconductor integrated circuit
JPH08204530A (ja) * 1995-01-23 1996-08-09 Sony Corp スイツチ回路
JP3485711B2 (ja) * 1996-02-29 2004-01-13 三洋電機株式会社 スイッチ回路装置
JPH11136111A (ja) * 1997-10-30 1999-05-21 Sony Corp 高周波回路
JP2000277703A (ja) * 1999-03-25 2000-10-06 Sanyo Electric Co Ltd スイッチ回路装置
AU2001243426A1 (en) * 2000-03-03 2001-09-17 Alpha Industries, Inc. Electronic switch

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05259192A (ja) * 1992-03-13 1993-10-08 Toshiba Corp ヘテロ接合型電界効果トランジスタおよびその製造方法
JPH06132310A (ja) * 1992-10-15 1994-05-13 Hitachi Ltd 半導体装置およびそれを用いた集積回路
EP0613191A2 (en) * 1993-02-26 1994-08-31 Sumitomo Electric Industries, Limited Channel structure for field effect transistor
EP0700161A2 (en) * 1994-08-29 1996-03-06 Hitachi, Ltd. Low distortion switch
JPH11283995A (ja) * 1998-03-30 1999-10-15 Hitachi Ltd 半導体装置およびその製造方法

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
INAMORI M. ET AL.: "A new GaAs variable-gain amplifier MMIC with a widw-dynamic-range and low-voltage-operation linear attenuation circuit", IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, vol. 48, no. 2, February 2000 (2000-02-01), pages 182 - 186, XP000906145 *
See also references of EP1427017A4 *

Also Published As

Publication number Publication date
JP2003086767A (ja) 2003-03-20
KR100517531B1 (ko) 2005-09-28
US7012285B2 (en) 2006-03-14
KR20030082933A (ko) 2003-10-23
EP1427017A4 (en) 2006-10-18
EP1427017A1 (en) 2004-06-09
US20040026742A1 (en) 2004-02-12

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