WO2003019639A1 - Dispositif de traitement faisant intervenir un gaz de traitement et son mode d'utilisation - Google Patents

Dispositif de traitement faisant intervenir un gaz de traitement et son mode d'utilisation Download PDF

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Publication number
WO2003019639A1
WO2003019639A1 PCT/JP2002/008829 JP0208829W WO03019639A1 WO 2003019639 A1 WO2003019639 A1 WO 2003019639A1 JP 0208829 W JP0208829 W JP 0208829W WO 03019639 A1 WO03019639 A1 WO 03019639A1
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WO
WIPO (PCT)
Prior art keywords
gas
treating
operating
same
vessel
Prior art date
Application number
PCT/JP2002/008829
Other languages
English (en)
Japanese (ja)
Inventor
Kazuya Nagaseki
Yusuke Hirayama
Original Assignee
Tokyo Electron Limited
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Limited filed Critical Tokyo Electron Limited
Publication of WO2003019639A1 publication Critical patent/WO2003019639A1/fr

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F4/00—Processes for removing metallic material from surfaces, not provided for in group C23F1/00 or C23F3/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32816—Pressure
    • H01J37/32834—Exhausting
    • H01J37/32844—Treating effluent gases
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32853—Hygiene
    • H01J37/32862—In situ cleaning of vessels and/or internal parts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02C—CAPTURE, STORAGE, SEQUESTRATION OR DISPOSAL OF GREENHOUSE GASES [GHG]
    • Y02C20/00—Capture or disposal of greenhouse gases
    • Y02C20/30—Capture or disposal of greenhouse gases of perfluorocarbons [PFC], hydrofluorocarbons [HFC] or sulfur hexafluoride [SF6]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Abstract

Cette invention concerne un dispositif de traitement (10) comprenant un récipient de traitement (11) pour l'exécution d'un traitement, par exemple une gravure, au moyen d'un gaz de traitement contenu dans ledit réservoir, et un mécanisme d'alimentation en gaz (15) faisant passer le gaz de traitement dans le récipient de traitement (11). De plus, le dispositif de traitement (10) comprend un mécanisme de décharge du gaz (14) permettant d'évacuer, après traitement, le gaz hors du récipient (11), et un mécanisme de circulation du gaz (21) permettant de ramener dans le récipient (11) une partie du gaz évacué par le mécanisme de décharge de gaz (14). Les mécanismes de décharge du gaz (14) et de circulation du gaz (21) sont chauffés par des dispositifs chauffants (22A, 22B) qui les empêchent d'accumuler des impuretés.
PCT/JP2002/008829 2001-08-31 2002-08-30 Dispositif de traitement faisant intervenir un gaz de traitement et son mode d'utilisation WO2003019639A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2001264529A JP4764574B2 (ja) 2001-08-31 2001-08-31 処理装置の運転方法
JP2001-264529 2001-08-31

Publications (1)

Publication Number Publication Date
WO2003019639A1 true WO2003019639A1 (fr) 2003-03-06

Family

ID=19091113

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2002/008829 WO2003019639A1 (fr) 2001-08-31 2002-08-30 Dispositif de traitement faisant intervenir un gaz de traitement et son mode d'utilisation

Country Status (2)

Country Link
JP (1) JP4764574B2 (fr)
WO (1) WO2003019639A1 (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9879359B2 (en) 2013-06-21 2018-01-30 Denso Corporation Silicon carbide semiconductor film-forming apparatus and film-forming method using the same

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20120100311A1 (en) * 2009-08-28 2012-04-26 Kyocera Corporation Apparatus for forming deposited film and method for forming deposited film
JP5041009B2 (ja) * 2010-01-14 2012-10-03 東京エレクトロン株式会社 熱処理装置、熱処理方法及び記憶媒体
JP5689294B2 (ja) * 2010-11-25 2015-03-25 東京エレクトロン株式会社 処理装置
JP6078354B2 (ja) * 2013-01-24 2017-02-08 東京エレクトロン株式会社 プラズマ処理装置
JP5764228B1 (ja) * 2014-03-18 2015-08-12 株式会社日立国際電気 基板処理装置、半導体装置の製造方法、プログラム及び記録媒体
JP5885870B2 (ja) * 2015-04-06 2016-03-16 株式会社日立国際電気 基板処理装置、半導体装置の製造方法、プログラム及び記録媒体
JP6763274B2 (ja) * 2016-10-14 2020-09-30 東京エレクトロン株式会社 成膜装置、成膜装置のクリーニング方法及び記憶媒体
JP7190888B2 (ja) * 2018-12-06 2022-12-16 東京エレクトロン株式会社 配管加熱装置及び基板処理装置

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0997785A (ja) * 1995-09-29 1997-04-08 Matsushita Electric Ind Co Ltd プラズマ処理装置およびプラズマクリーニング方法
JPH10125657A (ja) * 1996-10-16 1998-05-15 Ebara Corp 真空排気装置
JPH11162943A (ja) * 1997-12-02 1999-06-18 Matsushita Electron Corp 半導体装置の製造方法および製造装置
JP2000068212A (ja) * 1998-08-21 2000-03-03 Ebara Corp ガス循環機構を有する半導体製造方法及び装置
JP2001185544A (ja) * 1999-10-13 2001-07-06 Tokyo Electron Ltd 処理装置
JP2002217166A (ja) * 2001-01-19 2002-08-02 Toshiba Corp ガス処理装置のクリーニング方法

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0997785A (ja) * 1995-09-29 1997-04-08 Matsushita Electric Ind Co Ltd プラズマ処理装置およびプラズマクリーニング方法
JPH10125657A (ja) * 1996-10-16 1998-05-15 Ebara Corp 真空排気装置
JPH11162943A (ja) * 1997-12-02 1999-06-18 Matsushita Electron Corp 半導体装置の製造方法および製造装置
JP2000068212A (ja) * 1998-08-21 2000-03-03 Ebara Corp ガス循環機構を有する半導体製造方法及び装置
JP2001185544A (ja) * 1999-10-13 2001-07-06 Tokyo Electron Ltd 処理装置
JP2002217166A (ja) * 2001-01-19 2002-08-02 Toshiba Corp ガス処理装置のクリーニング方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9879359B2 (en) 2013-06-21 2018-01-30 Denso Corporation Silicon carbide semiconductor film-forming apparatus and film-forming method using the same

Also Published As

Publication number Publication date
JP2003077897A (ja) 2003-03-14
JP4764574B2 (ja) 2011-09-07

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