WO2003019639A1 - Treating device using treating gas, and method of operating the same - Google Patents

Treating device using treating gas, and method of operating the same Download PDF

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Publication number
WO2003019639A1
WO2003019639A1 PCT/JP2002/008829 JP0208829W WO03019639A1 WO 2003019639 A1 WO2003019639 A1 WO 2003019639A1 JP 0208829 W JP0208829 W JP 0208829W WO 03019639 A1 WO03019639 A1 WO 03019639A1
Authority
WO
WIPO (PCT)
Prior art keywords
gas
treating
operating
same
vessel
Prior art date
Application number
PCT/JP2002/008829
Other languages
French (fr)
Japanese (ja)
Inventor
Kazuya Nagaseki
Yusuke Hirayama
Original Assignee
Tokyo Electron Limited
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Limited filed Critical Tokyo Electron Limited
Publication of WO2003019639A1 publication Critical patent/WO2003019639A1/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F4/00—Processes for removing metallic material from surfaces, not provided for in group C23F1/00 or C23F3/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32816—Pressure
    • H01J37/32834—Exhausting
    • H01J37/32844—Treating effluent gases
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32853—Hygiene
    • H01J37/32862—In situ cleaning of vessels and/or internal parts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02C—CAPTURE, STORAGE, SEQUESTRATION OR DISPOSAL OF GREENHOUSE GASES [GHG]
    • Y02C20/00—Capture or disposal of greenhouse gases
    • Y02C20/30—Capture or disposal of greenhouse gases of perfluorocarbons [PFC], hydrofluorocarbons [HFC] or sulfur hexafluoride [SF6]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Analytical Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • Computer Hardware Design (AREA)
  • Mechanical Engineering (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Materials Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Drying Of Semiconductors (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
  • ing And Chemical Polishing (AREA)

Abstract

A treating device (10) includes a treating vessel (11) for effecting a treatment, such as etching, using a treating gas therein, and a gas feeding mechanism (15) for feeding the treating gas into the treating vessel (11). Further, the treating device (10) includes a gas discharging mechanism (14) for discharging the gas after treatment from the treating vessel (11), and a gas circulating mechanism (21) for returning part of the gas being discharged by this gas discharging mechanism (14) into the treating vessel (11). The gas discharging mechanism (14) and gas circulating mechanism (21) are provided with heaters (22A, 22B) for heating them to prevent accumulation of impurities.
PCT/JP2002/008829 2001-08-31 2002-08-30 Treating device using treating gas, and method of operating the same WO2003019639A1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2001-264529 2001-08-31
JP2001264529A JP4764574B2 (en) 2001-08-31 2001-08-31 Operating method of processing equipment

Publications (1)

Publication Number Publication Date
WO2003019639A1 true WO2003019639A1 (en) 2003-03-06

Family

ID=19091113

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2002/008829 WO2003019639A1 (en) 2001-08-31 2002-08-30 Treating device using treating gas, and method of operating the same

Country Status (2)

Country Link
JP (1) JP4764574B2 (en)
WO (1) WO2003019639A1 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9879359B2 (en) 2013-06-21 2018-01-30 Denso Corporation Silicon carbide semiconductor film-forming apparatus and film-forming method using the same

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102471886A (en) * 2009-08-28 2012-05-23 京瓷株式会社 Apparatus for forming deposited film and method for forming deposited film
JP5041009B2 (en) * 2010-01-14 2012-10-03 東京エレクトロン株式会社 Heat treatment apparatus, heat treatment method and storage medium
JP5689294B2 (en) * 2010-11-25 2015-03-25 東京エレクトロン株式会社 Processing equipment
JP6078354B2 (en) * 2013-01-24 2017-02-08 東京エレクトロン株式会社 Plasma processing equipment
JP5764228B1 (en) * 2014-03-18 2015-08-12 株式会社日立国際電気 Substrate processing apparatus, semiconductor device manufacturing method, program, and recording medium
JP5885870B2 (en) * 2015-04-06 2016-03-16 株式会社日立国際電気 Substrate processing apparatus, semiconductor device manufacturing method, program, and recording medium
JP6763274B2 (en) * 2016-10-14 2020-09-30 東京エレクトロン株式会社 Film forming equipment, cleaning method of film forming equipment and storage medium
JP7190888B2 (en) 2018-12-06 2022-12-16 東京エレクトロン株式会社 Piping heating device and substrate processing device

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0997785A (en) * 1995-09-29 1997-04-08 Matsushita Electric Ind Co Ltd Plasma processing device and plasma cleaning method
JPH10125657A (en) * 1996-10-16 1998-05-15 Ebara Corp Vacuum exhauster
JPH11162943A (en) * 1997-12-02 1999-06-18 Matsushita Electron Corp Semiconductor device and its manufacture
JP2000068212A (en) * 1998-08-21 2000-03-03 Ebara Corp Semiconductor manufacturing method and apparatus having gas circulation mechanism
JP2001185544A (en) * 1999-10-13 2001-07-06 Tokyo Electron Ltd Processor
JP2002217166A (en) * 2001-01-19 2002-08-02 Toshiba Corp Cleaning method of gas processing equipment

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0997785A (en) * 1995-09-29 1997-04-08 Matsushita Electric Ind Co Ltd Plasma processing device and plasma cleaning method
JPH10125657A (en) * 1996-10-16 1998-05-15 Ebara Corp Vacuum exhauster
JPH11162943A (en) * 1997-12-02 1999-06-18 Matsushita Electron Corp Semiconductor device and its manufacture
JP2000068212A (en) * 1998-08-21 2000-03-03 Ebara Corp Semiconductor manufacturing method and apparatus having gas circulation mechanism
JP2001185544A (en) * 1999-10-13 2001-07-06 Tokyo Electron Ltd Processor
JP2002217166A (en) * 2001-01-19 2002-08-02 Toshiba Corp Cleaning method of gas processing equipment

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9879359B2 (en) 2013-06-21 2018-01-30 Denso Corporation Silicon carbide semiconductor film-forming apparatus and film-forming method using the same

Also Published As

Publication number Publication date
JP4764574B2 (en) 2011-09-07
JP2003077897A (en) 2003-03-14

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