WO2003019633A1 - Procede de traitement de surface de composants d'un dispositif de traitement sous vide - Google Patents

Procede de traitement de surface de composants d'un dispositif de traitement sous vide Download PDF

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Publication number
WO2003019633A1
WO2003019633A1 PCT/JP2002/008534 JP0208534W WO03019633A1 WO 2003019633 A1 WO2003019633 A1 WO 2003019633A1 JP 0208534 W JP0208534 W JP 0208534W WO 03019633 A1 WO03019633 A1 WO 03019633A1
Authority
WO
WIPO (PCT)
Prior art keywords
processing
components
processing device
vacuum
onto
Prior art date
Application number
PCT/JP2002/008534
Other languages
English (en)
Japanese (ja)
Inventor
Noboru Miyagawa
Satoshi Wakabayashi
Original Assignee
Tokyo Electron Limited
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Limited filed Critical Tokyo Electron Limited
Publication of WO2003019633A1 publication Critical patent/WO2003019633A1/fr

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4404—Coatings or surface treatment on the inside of the reaction chamber or on parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Physics & Mathematics (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Cleaning In General (AREA)
  • Cleaning By Liquid Or Steam (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)

Abstract

L'invention concerne un dispositif de traitement sous vide (20) et un procédé de traitement de surface des composants d'un dispositif de traitement sous vide. Le dispositif permet de réaliser un tel traitement, de manière qu'un dépôt non nécessaire, comme un sous-produit réactif, adhère à la surface d'au moins une partie des composants. Ce dispositif permet, par exemple, de réaliser un traitement de formation de films sur un corps traité (W) comportant un récipient de traitement sous vide (22) et des composants dotés d'une tête de douche (26). Ce procédé de traitement de surface comprend l'étape d'application d'un traitement de polissage chimique, d'un traitement électrolytique ou d'un traitement de polissage avec fluide appliqué aux composants (22, 26 ) du dispositif de traitement (20), avant l'accroissement de l'adhésion du dépôt sur la surface des composants (22, 26), de manière à supprimer l'occurrence des particules par le biais de la séparation des composants.
PCT/JP2002/008534 2001-08-24 2002-08-23 Procede de traitement de surface de composants d'un dispositif de traitement sous vide WO2003019633A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2001-255264 2001-08-24
JP2001255264A JP4982931B2 (ja) 2001-08-24 2001-08-24 半導体処理装置及びこの構成部品の洗浄方法

Publications (1)

Publication Number Publication Date
WO2003019633A1 true WO2003019633A1 (fr) 2003-03-06

Family

ID=19083272

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2002/008534 WO2003019633A1 (fr) 2001-08-24 2002-08-23 Procede de traitement de surface de composants d'un dispositif de traitement sous vide

Country Status (2)

Country Link
JP (1) JP4982931B2 (fr)
WO (1) WO2003019633A1 (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7145194B2 (en) 2003-02-21 2006-12-05 Renesas Technology Corp. Semiconductor integrated circuit device and a method of manufacturing the same

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5440109B2 (ja) * 2009-11-13 2014-03-12 豊田合成株式会社 化合物半導体の製造方法
CN106663625B (zh) 2014-12-26 2019-10-25 A·Sat株式会社 测量方法、电极、再生方法、等离子体蚀刻装置和显示方法
JP6398827B2 (ja) * 2015-03-24 2018-10-03 三菱マテリアル株式会社 プラズマ処理装置用電極板の製造方法
JP6829649B2 (ja) * 2017-04-27 2021-02-10 大陽日酸株式会社 堆積物の除去方法、及び堆積物の除去装置
EP4023349A4 (fr) * 2019-08-28 2022-10-19 Shinryo Corporation Procédé de lavage d'un composant de dispositif de fabrication de semi-conducteur ayant des trous de gaz

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06151328A (ja) * 1992-11-11 1994-05-31 Mitsubishi Alum Co Ltd 半導体用ガス管
JPH07126828A (ja) * 1993-11-04 1995-05-16 Kobe Steel Ltd 半導体製造装置用高耐食性オーステナイト系ステンレス鋼部材の製造方法
JPH07136925A (ja) * 1993-11-22 1995-05-30 Mitsubishi Corp 研磨方法および研磨装置
JPH09245994A (ja) * 1996-03-08 1997-09-19 Nagano Keiki Seisakusho Ltd プラズマ利用の加工装置用電極およびその電極の製造方法
JP2000303180A (ja) * 1999-04-16 2000-10-31 Hitachi Ltd 処理装置
JP2000349027A (ja) * 1999-05-27 2000-12-15 Applied Materials Inc 半導体製造装置
JP2001032075A (ja) * 1999-07-19 2001-02-06 Kanegafuchi Chem Ind Co Ltd プラズマｃｖｄ装置およびそれを用いた成膜方法
US6187102B1 (en) * 1998-11-26 2001-02-13 Tokyo Electron Limited Thermal treatment apparatus

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06151328A (ja) * 1992-11-11 1994-05-31 Mitsubishi Alum Co Ltd 半導体用ガス管
JPH07126828A (ja) * 1993-11-04 1995-05-16 Kobe Steel Ltd 半導体製造装置用高耐食性オーステナイト系ステンレス鋼部材の製造方法
JPH07136925A (ja) * 1993-11-22 1995-05-30 Mitsubishi Corp 研磨方法および研磨装置
JPH09245994A (ja) * 1996-03-08 1997-09-19 Nagano Keiki Seisakusho Ltd プラズマ利用の加工装置用電極およびその電極の製造方法
US6187102B1 (en) * 1998-11-26 2001-02-13 Tokyo Electron Limited Thermal treatment apparatus
JP2000303180A (ja) * 1999-04-16 2000-10-31 Hitachi Ltd 処理装置
JP2000349027A (ja) * 1999-05-27 2000-12-15 Applied Materials Inc 半導体製造装置
JP2001032075A (ja) * 1999-07-19 2001-02-06 Kanegafuchi Chem Ind Co Ltd プラズマｃｖｄ装置およびそれを用いた成膜方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7145194B2 (en) 2003-02-21 2006-12-05 Renesas Technology Corp. Semiconductor integrated circuit device and a method of manufacturing the same

Also Published As

Publication number Publication date
JP2003068653A (ja) 2003-03-07
JP4982931B2 (ja) 2012-07-25

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