WO2002041369A3 - Planarisation par polissage électrolytique et traitement chimio-mécanique - Google Patents
Planarisation par polissage électrolytique et traitement chimio-mécanique Download PDFInfo
- Publication number
- WO2002041369A3 WO2002041369A3 PCT/US2001/043368 US0143368W WO0241369A3 WO 2002041369 A3 WO2002041369 A3 WO 2002041369A3 US 0143368 W US0143368 W US 0143368W WO 0241369 A3 WO0241369 A3 WO 0241369A3
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- electropolishing
- chemical mechanical
- mechanical planarization
- substrate
- electrolyte
- Prior art date
Links
- 239000000758 substrate Substances 0.000 abstract 4
- 239000003792 electrolyte Substances 0.000 abstract 3
- 238000005498 polishing Methods 0.000 abstract 3
- 239000002184 metal Substances 0.000 abstract 2
- 150000002500 ions Chemical class 0.000 abstract 1
- 238000011176 pooling Methods 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/32115—Planarisation
- H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23H—WORKING OF METAL BY THE ACTION OF A HIGH CONCENTRATION OF ELECTRIC CURRENT ON A WORKPIECE USING AN ELECTRODE WHICH TAKES THE PLACE OF A TOOL; SUCH WORKING COMBINED WITH OTHER FORMS OF WORKING OF METAL
- B23H5/00—Combined machining
- B23H5/06—Electrochemical machining combined with mechanical working, e.g. grinding or honing
- B23H5/08—Electrolytic grinding
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/046—Lapping machines or devices; Accessories designed for working plane surfaces using electric current
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25F—PROCESSES FOR THE ELECTROLYTIC REMOVAL OF MATERIALS FROM OBJECTS; APPARATUS THEREFOR
- C25F3/00—Electrolytic etching or polishing
- C25F3/16—Polishing
- C25F3/30—Polishing of semiconducting materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/32115—Planarisation
- H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
- H01L21/32125—Planarisation by chemical mechanical polishing [CMP] by simultaneously passing an electrical current, i.e. electrochemical mechanical polishing, e.g. ECMP
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
- H01L21/32134—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by liquid etching only
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Electrochemistry (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Power Engineering (AREA)
- Mechanical Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Weting (AREA)
- Electrical Discharge Machining, Electrochemical Machining, And Combined Machining (AREA)
Abstract
La présente invention concerne un procédé d'enlèvement de métal d'un substrat de semi-conducteur par dissolution des ions du métal dans un électrolyte. A cet effet, on mène de front trois opérations: d'une part application d'une tension entre un tampon de polissage et le substrat, d'autre part apport d'un électrolyte de polissage électrolytique à l'interface entre le substrat et le tampon de polissage, et enfin, accumulation de l'électrolyte autour du substrat au niveau du tampon de polissage.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US24999500P | 2000-11-20 | 2000-11-20 | |
US60/249,995 | 2000-11-20 |
Publications (2)
Publication Number | Publication Date |
---|---|
WO2002041369A2 WO2002041369A2 (fr) | 2002-05-23 |
WO2002041369A3 true WO2002041369A3 (fr) | 2004-01-08 |
Family
ID=22945867
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US2001/043368 WO2002041369A2 (fr) | 2000-11-20 | 2001-11-20 | Planarisation par polissage électrolytique et traitement chimio-mécanique |
Country Status (2)
Country | Link |
---|---|
US (1) | US20020104764A1 (fr) |
WO (1) | WO2002041369A2 (fr) |
Families Citing this family (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7153195B2 (en) * | 2000-08-30 | 2006-12-26 | Micron Technology, Inc. | Methods and apparatus for selectively removing conductive material from a microelectronic substrate |
US7192335B2 (en) * | 2002-08-29 | 2007-03-20 | Micron Technology, Inc. | Method and apparatus for chemically, mechanically, and/or electrolytically removing material from microelectronic substrates |
US7153410B2 (en) * | 2000-08-30 | 2006-12-26 | Micron Technology, Inc. | Methods and apparatus for electrochemical-mechanical processing of microelectronic workpieces |
US7078308B2 (en) | 2002-08-29 | 2006-07-18 | Micron Technology, Inc. | Method and apparatus for removing adjacent conductive and nonconductive materials of a microelectronic substrate |
US7112121B2 (en) * | 2000-08-30 | 2006-09-26 | Micron Technology, Inc. | Methods and apparatus for electrical, mechanical and/or chemical removal of conductive material from a microelectronic substrate |
US7094131B2 (en) * | 2000-08-30 | 2006-08-22 | Micron Technology, Inc. | Microelectronic substrate having conductive material with blunt cornered apertures, and associated methods for removing conductive material |
US7134934B2 (en) * | 2000-08-30 | 2006-11-14 | Micron Technology, Inc. | Methods and apparatus for electrically detecting characteristics of a microelectronic substrate and/or polishing medium |
US7220166B2 (en) * | 2000-08-30 | 2007-05-22 | Micron Technology, Inc. | Methods and apparatus for electromechanically and/or electrochemically-mechanically removing conductive material from a microelectronic substrate |
US7074113B1 (en) * | 2000-08-30 | 2006-07-11 | Micron Technology, Inc. | Methods and apparatus for removing conductive material from a microelectronic substrate |
US7129160B2 (en) | 2002-08-29 | 2006-10-31 | Micron Technology, Inc. | Method for simultaneously removing multiple conductive materials from microelectronic substrates |
US7160176B2 (en) * | 2000-08-30 | 2007-01-09 | Micron Technology, Inc. | Methods and apparatus for electrically and/or chemically-mechanically removing conductive material from a microelectronic substrate |
US20070290166A1 (en) * | 2001-03-14 | 2007-12-20 | Liu Feng Q | Method and composition for polishing a substrate |
US7160432B2 (en) * | 2001-03-14 | 2007-01-09 | Applied Materials, Inc. | Method and composition for polishing a substrate |
US20040235297A1 (en) * | 2003-05-23 | 2004-11-25 | Bih-Tiao Lin | Reverse electroplating for damascene conductive region formation |
US6848977B1 (en) | 2003-08-29 | 2005-02-01 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Polishing pad for electrochemical mechanical polishing |
US7112122B2 (en) * | 2003-09-17 | 2006-09-26 | Micron Technology, Inc. | Methods and apparatus for removing conductive material from a microelectronic substrate |
US7153777B2 (en) | 2004-02-20 | 2006-12-26 | Micron Technology, Inc. | Methods and apparatuses for electrochemical-mechanical polishing |
US7566391B2 (en) | 2004-09-01 | 2009-07-28 | Micron Technology, Inc. | Methods and systems for removing materials from microfeature workpieces with organic and/or non-aqueous electrolytic media |
US7998335B2 (en) * | 2005-06-13 | 2011-08-16 | Cabot Microelectronics Corporation | Controlled electrochemical polishing method |
US7435162B2 (en) * | 2005-10-24 | 2008-10-14 | 3M Innovative Properties Company | Polishing fluids and methods for CMP |
CN115179187A (zh) * | 2021-04-06 | 2022-10-14 | 广州集成电路技术研究院有限公司 | 晶片保护电路和化学机械平坦化设备 |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4140598A (en) * | 1976-06-03 | 1979-02-20 | Hitachi Shipbuilding & Engineering Co., Ltd. | Mirror finishing |
US5911619A (en) * | 1997-03-26 | 1999-06-15 | International Business Machines Corporation | Apparatus for electrochemical mechanical planarization |
WO2000026443A2 (fr) * | 1998-11-03 | 2000-05-11 | Nutool, Inc. | Procede et appareil de depot electro-chimico-mecanique |
US6121152A (en) * | 1998-06-11 | 2000-09-19 | Integrated Process Equipment Corporation | Method and apparatus for planarization of metallized semiconductor wafers using a bipolar electrode assembly |
WO2000059682A1 (fr) * | 1999-04-03 | 2000-10-12 | Nutool, Inc. | Procede et appareil de revetement et de polissage d'un substrat semiconducteur |
EP1104013A2 (fr) * | 1999-11-29 | 2001-05-30 | Applied Materials, Inc. | Polissage avancée de plaquettes metalliques assistée par polissage électrolytique |
-
2001
- 2001-11-20 US US09/989,338 patent/US20020104764A1/en not_active Abandoned
- 2001-11-20 WO PCT/US2001/043368 patent/WO2002041369A2/fr not_active Application Discontinuation
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4140598A (en) * | 1976-06-03 | 1979-02-20 | Hitachi Shipbuilding & Engineering Co., Ltd. | Mirror finishing |
US5911619A (en) * | 1997-03-26 | 1999-06-15 | International Business Machines Corporation | Apparatus for electrochemical mechanical planarization |
US6121152A (en) * | 1998-06-11 | 2000-09-19 | Integrated Process Equipment Corporation | Method and apparatus for planarization of metallized semiconductor wafers using a bipolar electrode assembly |
WO2000026443A2 (fr) * | 1998-11-03 | 2000-05-11 | Nutool, Inc. | Procede et appareil de depot electro-chimico-mecanique |
WO2000059682A1 (fr) * | 1999-04-03 | 2000-10-12 | Nutool, Inc. | Procede et appareil de revetement et de polissage d'un substrat semiconducteur |
EP1104013A2 (fr) * | 1999-11-29 | 2001-05-30 | Applied Materials, Inc. | Polissage avancée de plaquettes metalliques assistée par polissage électrolytique |
Also Published As
Publication number | Publication date |
---|---|
US20020104764A1 (en) | 2002-08-08 |
WO2002041369A2 (fr) | 2002-05-23 |
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