WO2003019633A1 - Method of surface-processing components of vacuum processing device - Google Patents

Method of surface-processing components of vacuum processing device Download PDF

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Publication number
WO2003019633A1
WO2003019633A1 PCT/JP2002/008534 JP0208534W WO03019633A1 WO 2003019633 A1 WO2003019633 A1 WO 2003019633A1 JP 0208534 W JP0208534 W JP 0208534W WO 03019633 A1 WO03019633 A1 WO 03019633A1
Authority
WO
WIPO (PCT)
Prior art keywords
processing
components
processing device
vacuum
onto
Prior art date
Application number
PCT/JP2002/008534
Other languages
French (fr)
Japanese (ja)
Inventor
Noboru Miyagawa
Satoshi Wakabayashi
Original Assignee
Tokyo Electron Limited
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Limited filed Critical Tokyo Electron Limited
Publication of WO2003019633A1 publication Critical patent/WO2003019633A1/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4404—Coatings or surface treatment on the inside of the reaction chamber or on parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge

Abstract

A vacuum processing device (20) and a method of surface-processing the components of a vacuum processing device, the device capable of performing such a processing that unnecessary deposit such as reactive byproduct is adhered onto the surface of at least a part of the components, for example, capable of performing a film forming processing onto a processed body (W) comprising a vacuum processing container (22) and components including a shower head (26); the method for surface processing comprising the step of applying a chemical polishing processing, an electrolytic processing, or a fluid polishing processing to the components (22, 26, ...) of the processing device (20) beforehand to increase the adhesion of deposit onto the surface of the components (22, 26) so as to suppress the occurrence of particles by the separation of the components.
PCT/JP2002/008534 2001-08-24 2002-08-23 Method of surface-processing components of vacuum processing device WO2003019633A1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2001-255264 2001-08-24
JP2001255264A JP4982931B2 (en) 2001-08-24 2001-08-24 Semiconductor processing apparatus and method for cleaning the component

Publications (1)

Publication Number Publication Date
WO2003019633A1 true WO2003019633A1 (en) 2003-03-06

Family

ID=19083272

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2002/008534 WO2003019633A1 (en) 2001-08-24 2002-08-23 Method of surface-processing components of vacuum processing device

Country Status (2)

Country Link
JP (1) JP4982931B2 (en)
WO (1) WO2003019633A1 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7145194B2 (en) 2003-02-21 2006-12-05 Renesas Technology Corp. Semiconductor integrated circuit device and a method of manufacturing the same

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5440109B2 (en) * 2009-11-13 2014-03-12 豊田合成株式会社 Method for producing compound semiconductor
TW201737297A (en) 2014-12-26 2017-10-16 Ａ Ｓａｔ股份有限公司 Electrode for plasma etching device
JP6398827B2 (en) * 2015-03-24 2018-10-03 三菱マテリアル株式会社 Method for manufacturing electrode plate for plasma processing apparatus
JP6829649B2 (en) * 2017-04-27 2021-02-10 大陽日酸株式会社 Sediment removal method and sediment removal equipment
EP4023349A4 (en) * 2019-08-28 2022-10-19 Shinryo Corporation Washing method of semiconductor manufacturing device component having gas holes

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06151328A (en) * 1992-11-11 1994-05-31 Mitsubishi Alum Co Ltd Gas pipe for semiconductor
JPH07126828A (en) * 1993-11-04 1995-05-16 Kobe Steel Ltd Production of high corrosion resistant austenitic stainless steel member for semiconductor producing device
JPH07136925A (en) * 1993-11-22 1995-05-30 Mitsubishi Corp Grinding method and grinding device
JPH09245994A (en) * 1996-03-08 1997-09-19 Nagano Keiki Seisakusho Ltd Electrode for processing device utilizing plasma, and manufacture of same electrode
JP2000303180A (en) * 1999-04-16 2000-10-31 Hitachi Ltd Processor
JP2000349027A (en) * 1999-05-27 2000-12-15 Applied Materials Inc Semiconductor manufacture device
JP2001032075A (en) * 1999-07-19 2001-02-06 Kanegafuchi Chem Ind Co Ltd Plasma cvd device, and film forming method using it
US6187102B1 (en) * 1998-11-26 2001-02-13 Tokyo Electron Limited Thermal treatment apparatus

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06151328A (en) * 1992-11-11 1994-05-31 Mitsubishi Alum Co Ltd Gas pipe for semiconductor
JPH07126828A (en) * 1993-11-04 1995-05-16 Kobe Steel Ltd Production of high corrosion resistant austenitic stainless steel member for semiconductor producing device
JPH07136925A (en) * 1993-11-22 1995-05-30 Mitsubishi Corp Grinding method and grinding device
JPH09245994A (en) * 1996-03-08 1997-09-19 Nagano Keiki Seisakusho Ltd Electrode for processing device utilizing plasma, and manufacture of same electrode
US6187102B1 (en) * 1998-11-26 2001-02-13 Tokyo Electron Limited Thermal treatment apparatus
JP2000303180A (en) * 1999-04-16 2000-10-31 Hitachi Ltd Processor
JP2000349027A (en) * 1999-05-27 2000-12-15 Applied Materials Inc Semiconductor manufacture device
JP2001032075A (en) * 1999-07-19 2001-02-06 Kanegafuchi Chem Ind Co Ltd Plasma cvd device, and film forming method using it

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7145194B2 (en) 2003-02-21 2006-12-05 Renesas Technology Corp. Semiconductor integrated circuit device and a method of manufacturing the same

Also Published As

Publication number Publication date
JP4982931B2 (en) 2012-07-25
JP2003068653A (en) 2003-03-07

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