WO2003007046A1 - Systeme optique et appareil d'exposition equipe du systeme optique - Google Patents

Systeme optique et appareil d'exposition equipe du systeme optique Download PDF

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Publication number
WO2003007046A1
WO2003007046A1 PCT/JP2002/006964 JP0206964W WO03007046A1 WO 2003007046 A1 WO2003007046 A1 WO 2003007046A1 JP 0206964 W JP0206964 W JP 0206964W WO 03007046 A1 WO03007046 A1 WO 03007046A1
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Prior art keywords
crystal
axis
optical
optical system
crystal axis
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PCT/JP2002/006964
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English (en)
Japanese (ja)
Inventor
Naomasa Shiraishi
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Nikon Corporation
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Priority to JP2003512756A priority Critical patent/JPWO2003007046A1/ja
Publication of WO2003007046A1 publication Critical patent/WO2003007046A1/fr

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/7095—Materials, e.g. materials for housing, stage or other support having particular properties, e.g. weight, strength, conductivity, thermal expansion coefficient
    • G03F7/70958—Optical materials or coatings, e.g. with particular transmittance, reflectance or anti-reflection properties
    • G03F7/70966—Birefringence

Definitions

  • the present invention relates to an optical system and an exposure apparatus provided with the optical system, and more particularly to a projection optical system suitable for an exposure apparatus used when a micro device such as a semiconductor device or a liquid crystal display device is manufactured by a photolithography process. It is. Background art
  • the pattern of the photomask (also called a reticle) drawn by enlarging the pattern to be formed by about 4 to 5 times is projected.
  • a method of performing reduced exposure transfer onto a photosensitive substrate (substrate to be exposed) such as Jehachi using an exposure apparatus is used.
  • the exposure wavelength keeps shifting to shorter wavelengths in order to cope with miniaturization of semiconductor integrated circuits.
  • the exposure wavelength of 248 nm of KrF excimer laser is the mainstream. ⁇ , but 19.3 nm of shorter wavelength ArF excimer laser is also entering the stage of practical use.
  • the A r 2 laser having a wavelength of 1 5 7 nm of F 2 laser one and the wavelength 1 2 6 nm proposed a projection exposure equipment that uses the light source for supplying light in a wavelength band so-called vacuum ultraviolet region Is being done.
  • high resolution can be achieved by increasing the numerical aperture (NA) of the projection optical system, not only development of a shorter exposure wavelength but also development of a projection optical system with a larger numerical aperture Has also been made.
  • Optical materials with good transmittance and uniformity for exposure light in the ultraviolet region having such a short wavelength are limited.
  • synthetic quartz glass can be used as a lens material, but chromatic aberration cannot be sufficiently corrected with one type of lens material.
  • Calcium fluoride crystals (fluorite) are used for the lenses. Meanwhile, projecting as a light source an F 2 laser In shadow optics, the usable lens materials are effectively limited to calcium fluoride crystals (fluorite).
  • the present invention has been made in view of the above-described problems. For example, even when a birefringent crystal material such as fluorite is used, good optical performance is obtained without being substantially affected by birefringence. It is an object of the present invention to provide an optical system that can be secured and an exposure apparatus including the optical system.
  • the present invention provides a micro device manufacturing apparatus capable of manufacturing a high performance micro device according to a high resolution exposure technology using an exposure apparatus equipped with an optical system having good optical performance using a crystalline material. It aims to provide a method.
  • an optical system including a plurality of crystal optical elements formed of crystals belonging to a cubic system
  • the plurality of crystal optical elements include: a crystal optical element having a first crystal axis set to substantially coincide with an optical axis of the optical system; and a second crystal axis different from the first crystal axis corresponds to the optical axis. With a crystal optical element set to substantially match,
  • a direction of a predetermined crystal axis in a plane perpendicular to the optical axis is an angle P about the optical axis with respect to a direction of a predetermined axis in the plane.
  • an angle formed by the specific light ray with the direction of the optical axis is 0 j
  • an angle formed by the specific light ray with the direction of the predetermined axis is ⁇ . j
  • the optical path length of the specific light beam is L j
  • the first constant for a first predetermined polarization determined by a sex constant, a crystal axis substantially coincident with the optical axis, the angle P j, the angle 0 j, the angle ⁇ ′′ ′, and the optical path length L j.
  • the amount ⁇ R j and the second total evaluation amount ⁇ S j, which is the sum of the second evaluation amounts S j for the plurality of crystal optical elements, are on the image plane or the object plane of the optical system.
  • an optical system characterized in that light rays in an image forming light beam condensed at at least one arbitrary point have a predetermined relationship.
  • the first evaluation amount Rj is optical path length change information for the first predetermined polarization
  • the second evaluation amount Sj is the second evaluation amount Rj.
  • This is optical path length change information for a fixed polarization.
  • the first predetermined polarized light is an R-polarized light having a polarization direction in a radial direction of a circle centered on the optical axis
  • the second predetermined polarized light is a circular polarized light centered on the optical axis. It is preferably 0-polarized light having a polarization direction in the circumferential direction.
  • the predetermined relationship is a relationship in which the sum of the first evaluation amounts Rj is substantially equal for light rays in an imaged light beam condensed on at least any one point on an image plane or an object plane of the optical system.
  • the sum of the evaluation amounts Rj of the optical system and the second total evaluation amount ⁇ Sj are substantially equal to each other with respect to the light rays in the imaged light flux converged on at least one point on the image plane or the object plane of the optical system. It is preferred to include equal relationships.
  • the crystal optical element G j is set such that the optical axis and the crystal axis [11 1] or the crystal axis and the optically equivalent crystal axis substantially coincide with each other.
  • Rj CKXLjX [56X ⁇ l-cos (40 j) ⁇
  • the crystal optical element G j set so that the optical axis and the crystal axis [001] or the crystal axis and the optical axis equivalent to the crystal axis substantially coincide with each other.
  • the second evaluation quantity S j is
  • Rj CK XLj X ⁇ 1-cos (0 j) ⁇ X ⁇ -84-12 ⁇ 8 ( ⁇ ]) ⁇ / / 192
  • the crystal optical element Gj set so that the optical axis and the crystal axis [01 1] or the crystal axis that is optically equivalent to the crystal axis substantially coincide with each other.
  • the predetermined crystal axis is a crystal axis [100] or a crystal axis optically equivalent to the crystal axis.
  • Rj a XLj X [U—cos (40j) ⁇ X ⁇ 21-9Xcos (4 j) —84Xcos (2 oj) ⁇
  • the physical property constant of the crystal is a crystal axis [01 1] or a crystal optically equivalent to the crystal axis in a crystal forming each crystal optical element Gj.
  • the refractive index n100 of light having a polarization direction in the direction of the crystal axis [100 ° or a crystal axis optically equivalent to the crystal axis];
  • the difference from the refractive index n 011 of light having a polarization direction in the direction of the crystal axis optically equivalent to the crystal axis is a crystal axis [01 1] or a crystal optically equivalent to the crystal axis in a crystal forming each crystal optical element Gj.
  • the absolute value of the difference between the first total evaluation amount ⁇ R j and the second total evaluation amount ⁇ S j is determined on the image plane or the object plane of the optical system.
  • the light ray in the image light beam is set to be smaller than ⁇ 2.
  • an absolute value of a difference between the first total evaluation amount ⁇ R j and a predetermined value is expressed on an image plane of the optical system.
  • the value of ⁇ ⁇ 2 is set to be smaller than ⁇ ⁇ 2 for the light beam in the imaged light beam focused on at least one arbitrary point on the object surface.
  • the absolute value of the difference between the second total evaluation amount ⁇ S j and a predetermined value is at least an arbitrary value on the image plane or the object plane of the optical system. It is preferable that the light beam in the imaging light beam condensed at one point is set to be smaller than ⁇ Z 2.
  • the optical system is set such that the optical axis substantially matches a crystal axis [111] or a crystal axis optically equivalent to the crystal axis.
  • ⁇ is an integer of 3 or more
  • crystal optical elements wherein the ⁇ crystal optical elements have a crystal axis [1-10] in a plane perpendicular to the optical axis or an optical axis
  • the directions of the crystal axes which are equivalent to the above have a rotational positional relationship about (120ZM) degrees apart from each other about the optical axis.
  • the optical system is set such that the optical axis substantially matches a crystal axis [001] or a crystal axis optically equivalent to the crystal axis.
  • ⁇ is an integer of 3 or more).
  • the ⁇ crystal optical elements have a crystal axis [100] in a plane perpendicular to the optical axis or an optically equivalent to the crystal axis.
  • the directions of the crystal axes have a rotational positional relationship of about (90 °) degrees apart from each other about the optical axis.
  • the optical system is configured such that the optical axis and the crystal axis [01 1] or a crystal axis optically equivalent to the crystal axis are set substantially equal to each other.
  • L is an integer of 3 or more) crystal optical elements, wherein the L crystal optical elements are a crystal axis [100] in a plane perpendicular to the optical axis or optically equivalent to the crystal axis.
  • the directions of the various crystal axes have a rotational positional relationship about (180 / L) apart from each other about the optical axis.
  • the optical system is set such that the optical axis and a crystal axis [01 1] or a crystal axis optically equivalent to the crystal axis substantially coincide with each other.
  • P is an integer of 2 or more
  • crystal optical elements and the P crystal optical elements have a crystal axis [100] in a plane perpendicular to the optical axis or the crystal axis and the optical axis.
  • the directions of the crystal axes, which are equivalent to each other, have a rotational positional relationship about (90 / P) degrees apart from each other about the optical axis.
  • M is an integer of 3 or more crystal optical elements set so that the optical axis and the crystal axis [1 11] or the crystal axis optically equivalent to the crystal axis substantially coincide with each other;
  • directions of crystal axes [1-10] lying in a plane perpendicular to the optical axis or crystal axes optically equivalent to the crystal axes are almost mutually centered on the optical axis.
  • 120ZM Provided is an optical system having a rotational positional relationship separated by degrees.
  • N is an integer of 3 or more crystal optical elements set so that the optical axis and the crystal axis [001] or the crystal axis optically equivalent to the crystal axis substantially coincide with each other.
  • the N crystal optical elements may have a crystal axis [100] in a plane perpendicular to the optical axis or a direction of a crystal axis optically equivalent to the crystal axis. (90 / N) An optical system characterized by having a rotational positional relationship separated by degrees.
  • L (L is an integer of 3 or more) crystal optical elements set so that the optical axis and the crystal axis [0 11] or the crystal axis optically equivalent to the crystal axis substantially coincide with each other;
  • the L crystal optical elements may have a crystal axis [100] in a plane perpendicular to the optical axis or a crystal axis optically equivalent to the crystal axis.
  • L Provide an optical system characterized by having a rotational position Offer.
  • the present invention provides, as a fifth invention, an optical system including a plurality of crystal optical elements formed of crystals belonging to a cubic system,
  • P is an integer of 2 or more crystal optical elements set so that the optical axis and the crystal axis [0 1 1] or a crystal axis optically equivalent to the crystal axis substantially coincide with each other,
  • the P crystal optical elements may have a crystal axis [100] in a plane perpendicular to the optical axis or a crystal axis optically equivalent to the crystal axis.
  • two or three or more crystal optical elements have a rotation error of ⁇ 4 degrees or less, or an angle error between the crystal axis and the optical axis that should coincide with the optical axis. Is preferably ⁇ 4 degrees or less.
  • the crystal is preferably a calcium fluoride crystal or a barium fluoride crystal. Further, it is preferable to further include at least one concave reflecting mirror. Further, it is preferable that the optimally aberration correction with respect to A r F excimer laser optimally or are aberration correction with respect to the oscillation wavelength of, or F 2 laser oscillation wave length.
  • an illumination system for illuminating a mask, and the optical system of the first to fifth aspects for forming an image of a pattern formed on the mask on a photosensitive substrate.
  • An exposure apparatus is provided.
  • an exposure step of exposing the pattern of the mask on the photosensitive substrate using the exposure apparatus of the sixth aspect, and a developing step of developing the photosensitive substrate exposed in the exposure step The present invention provides a method for producing microdeposits, comprising: BRIEF DESCRIPTION OF THE FIGURES
  • FIG. 1 is a view schematically showing a configuration of an exposure apparatus having a projection optical system according to each embodiment of the present invention.
  • FIG. 2 is a diagram schematically showing a configuration of a projection optical system according to the first embodiment of the present invention. It is.
  • FIG. 3 is a diagram for explaining names of crystal axes in a cubic crystal such as fluorite.
  • 4A to 4C are diagrams for explaining the definition of a rotation angle about the optical axis of the crystal lens.
  • FIG. 5 is a diagram for explaining the definition of an angle 0 formed by the imaging light rays in the crystal lens G j with the Z-axis direction and an angle formed by the X-axis direction.
  • FIG. 6 is a diagram schematically showing a configuration of a projection optical system according to a second embodiment of the present invention.
  • FIG. 7 is a flowchart of a method for obtaining a semiconductor device as a micro device.
  • FIG. 8 is a flowchart of a method for obtaining a liquid crystal display element as a micro device.
  • FIG. 1 is a view schematically showing a configuration of an exposure apparatus having a projection optical system according to each embodiment of the present invention.
  • the present invention is applied to a projection optical system mounted on an exposure apparatus.
  • an exposure apparatus includes a light source 1 such as an ArF excimer laser or a two laser.
  • the light beam supplied from the light source 1 is guided to the illumination optical system 3 via the light transmission system 2.
  • the illumination optical system 3 is composed of bending mirrors 3a and 3b as shown, an optical integrator (not shown) (illuminance equalizing element), and the like, and illuminates the reticle (mask) 101 with substantially uniform illumination.
  • Reticle 101 is held by reticle holder 14 by, for example, vacuum suction, and is configured to be movable by the action of reticle stage 5.
  • the light beam transmitted through the reticle 101 is condensed through the projection optical system 300 to form a projected image of the pattern on the reticle 101 on a photosensitive substrate such as a semiconductor wafer 102.
  • . ⁇ C 102 is also held by the wafer holder 7 by, for example, vacuum suction, and is configured to be movable by the action of the wafer stage 8. In this way, by performing the batch exposure while moving the wafer 102 in steps, the pattern projection image of the reticle 101 can be sequentially transferred to each exposure area of the wafer 102.
  • the reticle 101 is placed on each exposure area of the wafer 102. Can be sequentially transferred.
  • An alignment microscope 10 for accurately detecting the position of the position detection mark on the device 102 is mounted.
  • the light source 1 When using a F 2 laser one and A r F excimer laser (or the like A r 2 laser having a wavelength of 1 2 6 eta m) as the light source 1, light transmitting system 2, the illumination optical system 3 and the projection optical science system 3 0 0
  • the light path is purged with an inert gas such as, for example, nitrogen.
  • an inert gas such as, for example, nitrogen.
  • the reticle 1 0 1 the reticle holder one 4 and the reticle stage 5 is isolated from the outside atmosphere by the casing 6, the Ke - internal space also inert gas Thing 6 Has been purged.
  • FIG. 2 is a diagram schematically showing a configuration of a projection optical system according to the first embodiment of the present invention.
  • the Z axis is parallel to the optical axis AX 100 of the projection optical system 100 (corresponding to the projection optical system 300 in FIG. 1), and in a plane perpendicular to the Z axis.
  • the X axis is set parallel to the plane of FIG. 2 and the Y axis is set perpendicular to the plane of FIG. 2 in a plane perpendicular to the Z axis.
  • the + Z axis is downward in the figure, the + X axis is rightward in the figure, the + Y axis is forward in the page, and the XYZ coordinate system as a whole is a right-handed coordinate system (hereinafter simply referred to as “hand system”). ").
  • the present invention is applied to a refractive projection optical system in which aberration correction is optimized for an ArF laser having a wavelength of 193 nm.
  • Projection light of the first embodiment In the science system 100, a light beam emitted from one point on the reticle 101 is focused on one point on the semiconductor wafer 102 as a photosensitive substrate via lenses 103 to 110 arranged along the optical axis AX100. Collect light. Thus, a projected image of the pattern drawn on reticle 101 is formed on wafer 102.
  • the lenses 105, 106, 109 and 110 are formed of calcium fluoride crystals (fluorite), and the other lenses are formed of synthetic quartz glass.
  • a lens made of fluorite is called a “crystal lens”.
  • the pupil plane PP is almost an optical Fourier transform plane with respect to the reticle 101 and the wafer (photosensitive substrate) 102, and an aperture stop can be arranged here.
  • fluorite has birefringence for short-wavelength light beams.
  • birefringence difference in refractive index between two light beams having orthogonal polarization planes
  • the crystal axis [111] or [100] of the crystal lens is set to coincide with the optical axis AX 100 of the projection optical system 100 (therefore, the optical axis of the crystal lens).
  • the birefringence is maximized.
  • the imaging light flux emitted from one point on the reticle 101 and condensed on the wafer 102 is within the range of the imaging light flux defined by the maximum incident angle 100 on the wafer 102 (in FIG. (The range from L to 100 R) and passes through lenses 103 to 110 constituting the projection optical system 100.
  • the optical path 1 in the crystal lens 105 05m, the optical path 106m in the crystal lens 106, the optical path 109m in the crystal lens 109, and the optical path 110m in the crystal lens 110 are not parallel to the optical axis AX100.
  • the imaging ray 10 Om It is subject to optical path length fluctuation (optical path length change) due to birefringence of fluorite crystals.
  • imaging light rays in the imaging light flux also undergo optical path length fluctuations due to the birefringence of the fluorite crystal when passing through the crystal lens 105, 106, 109, 110 .
  • the optical path length in each crystal lens and the angle formed with the optical axis AX100 for the other imaging light rays are different from the case of the imaging light ray 10 Om in general.
  • the optical path length will be affected.
  • each of the imaging light beams in the imaging light flux (100 L to 100 R) undergoes a different optical path length variation, that is, a wavefront aberration occurs in the imaging light flux, and the solution of the projection optical system 100 This leads to lower image performance.
  • Such a birefringence amount can be accurately determined based on the exposure wavelength ⁇ , the relationship between the crystal direction of the fluorite and the traveling direction of the light beam, and the polarization direction of the light beam. However, it can only be obtained by using a second-order tensor determined by the crystal direction of the fluorite and the traveling direction of the luminous flux, and a number of rotation matrices for rotating the tensor in three-dimensional space. However, it was an extremely complicated calculation method to use as an index for optical design. The present inventor has found that the above-mentioned birefringence amount can be represented by a simple formula described below. Then, they have found that by performing optical design so as to satisfy this equation, it is possible to design an optical system in which the adverse effect of birefringence does not substantially occur even if a crystal lens is used.
  • the formula for calculating the amount of birefringence differs depending on which crystal axis of the crystal lens substantially coincides with the optical axis of the optical system (hereinafter, also referred to as “axis”).
  • axis optical axis of the optical system
  • the names of crystal axes in cubic crystals such as fluorite will now be described with reference to FIG.
  • the cubic system is a crystal structure in which unit cells of a cube are periodically arranged in the direction of each side of the cube. Each side of the cube is orthogonal to each other, and these are defined as Xa axis, Ya axis, and Za axis.
  • the + direction of the Xa axis is the direction of the crystal axis [100]
  • the + direction of the Ya axis is the direction of the crystal axis [010]
  • the + direction of the Za axis is the crystal.
  • the direction is the crystal axis [X1, y1, z1].
  • Direction For example, the orientation of the crystal axis [1 1 1] matches the orientation of the azimuth vector (1, 1, 1). Also, the direction of the crystal axis [1 1 1 2] coincides with the direction of the azimuth vector (1, 1, -2).
  • the Xa axis, the Ya axis, and the Za axis are completely equivalent optically and mechanically to each other, and cannot be distinguished in actual crystals.
  • Notation by changing the code and array position, such as [1 10].
  • the notation [01 1], [0—11], [1 10], etc. a plurality of optically equivalent crystal axes are collectively represented. The same applies to other crystal axes other than the crystal axis [01 1] such as the crystal axis [001] and [11 1].
  • the crystal axis [001], the crystal axis [01 1], or the crystal axis' [1 1 1] should almost coincide with the optical axis (Z axis). It is good to set. This is because by making these crystal axes coincide with the optical axis, the rotational symmetry of the birefringence with respect to the optical axis can be set optimally.
  • the crystal axes [00 1] is made to coincide with the Z axis, the crystal axes [100], [010], [1 10], [1] are in a plane perpendicular to the Z axis (XY plane). -1 10] and so on.
  • the crystal axes [100], [-100], [01-1], etc. exist in the XY plane. Furthermore, when the crystal axis [1 1 1] is made to coincide with the Z axis, the crystal axes [1 10], [1 1 -2], etc. exist in the XY plane.
  • the crystal axis [001], [Oil], and [1 1 1] coincides with the optical axis (Z axis).
  • the crystal axis [11 1] coincides with the optical axis AX 100 of the projection optical system 100.
  • FIGS. 4A to 4C are diagrams for explaining the definition of a rotation angle about the optical axis of the crystal lens.
  • the + Z axis is directed toward the front of the drawing and coincides with the optical axis AX100 of the projection optical system 100.
  • the crystal lens G j one of the crystal lenses 105 and 106 whose crystal axis [00 1] coincides with the optical axis (Z axis)
  • pj be the amount of rotation (rotation angle) from the X-axis direction to the Y-axis direction around the Z-axis of the crystal axis [100] in the XY plane.
  • the XY The amount of rotation of the crystal axis [1-11] in the plane from the X-axis direction to the Y-axis direction around the Z-axis is defined as ⁇ 0 j.
  • the crystal lens G j in which the crystal axis [01 1] coincides with the optical axis (Z axis) is, as shown in FIG.
  • FIG. 5 is a diagram for explaining the definition of an angle 0 formed by the imaging light rays in the crystal lens G j with the Z-axis direction and an angle formed by the X-axis direction.
  • FIG. 5 shows that the angle 0 formed by the imaging optical path (105m, 106m, 109m, 110m) in the crystal lens G j (crystal lens 105, 106, 109, 110) with the Z axis direction and the X axis direction
  • the angle ⁇ is shown.
  • the Z and Z axes are axes that are parallel-shifted from the optical Z axis to the position of the starting point I of the vector L jm, and the direction is naturally While equal to the direction of the Z axis.
  • the angle between the vector L j m and the Z axis is defined as 0.
  • this angle is 0 j.
  • the position at which the end point P of the vector L j m is projected on the Z ′ axis is defined as the origin ⁇
  • the angle between the line segment extending from the origin O to the end point P and the X ′ axis is defined as ⁇ .
  • the angle is ⁇ i> j for the j-th crystal lens Gj.
  • the X and X axes are also obtained by shifting the X axis in parallel, and the direction is naturally equal to the direction of the X axis.
  • the Y 'axis is also a parallel shift of the Y axis, and its direction is naturally equal to the Y axis direction.
  • R-polarized light polarized light having an electric field plane in a plane including the vector L jm representing the traveling direction of the light beam and the Z ′ axis
  • 0 polarized light Polarized light with an electric field
  • R-polarized light represents polarized light whose polarization direction is substantially coincident with the radial direction of a circle centered on the optical axis AX100.
  • the 0-polarized light represents polarized light whose polarization direction is substantially coincident with the circumferential direction of a circle centered on the optical axis AX100.
  • the evaluation amount representing the effect of the amount of birefringence on the light flux in the j-th crystal lens G j is an evaluation amount R j (first evaluation amount) representing the amount of change in the refractive index of R polarized light, and the refractive index of ⁇ polarized light.
  • the evaluation amount S j (the second evaluation amount) representing the variation amount.
  • the first evaluation amount R j and the second evaluation amount S j are Equations (1) and (2) respectively.
  • Rj aXLjX [56X ⁇ l-cos (40j) ⁇
  • R j a X L j X [ ⁇ l-cos (40 j) ⁇ X ⁇ 21-9 X cos (4 oj) -84X cos (2 ⁇ ] ') ⁇
  • the physical property constant a of a crystal represents the birefringence generated for light traveling in the direction of the crystal axis [01 1], and the refractive index n of light having a polarization direction (electric field direction) in the direction of the crystal axis [100]. It is the difference between 100 and the refractive index n 0 11 of light having a polarization direction in the direction of the crystal axis [0-11].
  • the optical path length L j is the length of the imaging optical path in the crystal lens Gj (eg, the optical path 105 m).
  • the terms including cos and sin after that are dimensionless, and the evaluation quantities R j and S j represent the change in the optical path length of the transmitted light (optical path length information) due to birefringence.
  • a plurality of (four in the present embodiment) crystal lenses Gj are present on the imaging light beam 100m from one point on the reticle 101 to one point on the wafer 102.
  • S j is obtained for each of the plurality of crystal lenses G j.
  • the first total evaluation amount ⁇ R j ( ⁇ is a multiplication symbol representing the integration for different j), which is the sum total of the first evaluation amounts R j
  • the second total evaluation amount S j is the sum total of the second evaluation amounts S j
  • the total evaluation amount 2 S j of 2 is obtained.
  • the total evaluation quantities ⁇ R j and ⁇ S j are the imaging rays It is an index indicating the effect of birefringence of the entire projection optical system 100 on 100 m (change in the optical path length of transmitted light due to birefringence). That is, if the value of the total evaluation amount ⁇ Rj is equal to the value of the total evaluation amount ⁇ Sj, the change in the optical path length between the R-polarized light and the zero-polarized light is equal, and accordingly, the wavefronts also match.
  • the crystal axis [001] of the crystal lenses 105 and 106 coincides with the optical axis AX100, the optical path length L j and the angles 0 j and ⁇ of the imaging optical paths 105 m and 106 m are determined. j, and substituting them into equations (3) and (4), the evaluation quantities R j and S j of each crystal lens 105, 106 are obtained, respectively. Since the crystal axis [111] of the crystal lenses 109 and 110 coincides with the optical axis AX100, the optical path length Lj and the angles 0j and ⁇ j of the imaging optical paths 109m and 11Om are calculated.
  • the wavefront aberration in the imaged light flux (100L to 10OR) from one point on the reticle 101 to one point on the wafer 102 that is, the optical path length difference between the imaged light beams. It is necessary to determine ⁇ Rj and ⁇ Sj for each of the imaging light rays passing through different positions on the pupil plane PP. Then, if ⁇ R j and ⁇ S j are constant for all the imaging rays, and if ⁇ R j and ⁇ S j are equal to each other for all the imaging rays, the imaging luminous flux (100L ⁇ 10 OR) has no wavefront aberration.
  • the projection optics is such that ⁇ R j and ⁇ S j are constant for all imaging rays and ⁇ R j and ⁇ S j are equal to each other for all imaging rays.
  • ⁇ R j and ⁇ S j are applied to all imaging rays. It is difficult to make them completely constant and make ⁇ R j and ⁇ S j completely equal to each other for all imaging rays.
  • an optical system which is not practically affected by birefringence can be realized by suppressing the range of variation of ⁇ R j and ⁇ S j to about 1/2 or less of the exposure wavelength ⁇ .
  • the absolute value of the difference between ⁇ R j and the predetermined value and the absolute value of the difference between ⁇ S j and the predetermined value are focused on at least one arbitrary point on the image plane or the object plane.
  • For the middle ray keep it smaller than ⁇ ⁇ 2 and calculate the absolute value of the difference between ⁇ R j and ⁇ S j in at least one point on the image plane or object plane.
  • the scale! 'Pobi 3' ' has a term proportional to sin (3 ⁇ j), so it rotates three times with respect to the rotation of the lens.
  • Has symmetric values. This means that the amount of change in the optical path length given by R j and S j fluctuates with a cycle of 120 degrees of lens rotation. Therefore, if two lenses with the crystal axis [11 1] as the optical axis are used, the other lens rotates relative to one lens by 60 or 180 degrees ( 60 + 120) around the optical axis.
  • R j and S j have a term proportional to cos (4 ⁇ j), so the value is four times rotationally symmetric with respect to the rotation of the lens. have.
  • both crystal axes [100] are set to be angularly separated by 45 or 135 degrees in the XY plane, the four-fold rotationally symmetric components of both lenses cancel each other out, and ⁇ R j and ⁇ This is convenient for making S j equal.
  • R j and S j have both a term proportional to cos (4 ⁇ j) and a term proportional to cos (2 ⁇ j).
  • R j and S j have both a term proportional to cos (4 ⁇ j) and a term proportional to cos (2 ⁇ j).
  • four lenses with the crystal axis [01 1] as the optical axis are used, and each lens is rotated by 45 degrees around the optical axis, and each crystal axis [100] is 45 degrees in the XY plane. Setting them apart from each other cancels the rotational asymmetry of each lens, which is convenient for equalizing ⁇ R j and ⁇ S j for each imaging light flux.
  • the rotational symmetric component cancellation by the two lens pairs and the rotational asymmetric cancellation by the four lens pairs described above are limited to application to two lenses ⁇ four lenses. Not only. Therefore, while adjusting the rotation angle, thickness, radius of curvature, spacing, etc. of the plurality of crystal lenses around the optical axis, and the thickness, radius of curvature, spacing, etc. of the other lenses, as a whole, ⁇ R j and ⁇ It goes without saying that S j should be set to be equal.
  • the rotationally asymmetric period of one lens is 120 degrees as described above. Therefore, the three lenses have a rotational positional relationship of 40 degrees apart from each other about the optical axis, that is, the direction of the crystal axis [1-10] in the plane perpendicular to the optical axis is centered on the optical axis.
  • the rotational asymmetries of the three lenses overlap each other with a positional shift of 1/3 cycle.
  • the direction of the crystal axis [1-10] of the second lens is a predetermined direction about the optical axis with respect to the direction of the crystal axis [1-10] of the first lens.
  • the direction of the crystal axis [1-10] of the third lens is the same as the direction of the crystal axis [1-10] of the second lens around the optical axis. It has a positional relationship rotated by 40 degrees in a predetermined direction. In other words, the rotation angle of the crystal axis [1-10] of each lens is 0 degrees, 40 degrees, and 80 degrees with respect to one of the three lenses (20 degrees).
  • Equation (21), (22), and (23) are given for the following lens.
  • the unit of the argument of sin is [degree].
  • equations (22) and (23) can be transformed as shown in the following equations (22 ') and (23').
  • Equation (24) Hcos (120 cos (240) and sin (120) + sin (240) are both 0. Therefore, the sum of Equations (21), (22) and (23), that is, the value of Equation (24), is 0.
  • the birefringence is reduced by the canceling action.
  • the rotationally asymmetric component can be removed, and it can be seen that using such a set of three lenses is advantageous for equalizing ⁇ Rj and ⁇ Sj for each imaging light flux.
  • the rotationally asymmetric component of birefringence by using three lenses of approximately the same thickness with the crystal axis [001] as the optical axis.
  • the period of the rotational asymmetry in one lens is 90 degrees as described above. Therefore, the three lenses have a rotational positional relationship of 30 degrees apart from each other about the optical axis, that is, the directions of the crystal axes [100] in a plane perpendicular to the optical axis are alternated about the optical axis.
  • the rotational asymmetry of the three lenses will be displaced by 1 to 3 periods and overlap each other.
  • equations (32) and (33) can be transformed as shown in the following equations (32 ') and (33,).
  • Equation (34) the sum of Equations (31), (32), and (33) is expressed by the following Equation (34).
  • equation (34) l + cos (120) + cos (240) ⁇ Xcos (4col) — ⁇ sin (120) + sin (240) ⁇ Xcos (4col) (34)
  • equation (34) l + cos (120) + cos (240) and sin (120) + sin (240) are both zero. Therefore, the sum of equations (3 1), (32), and (33), that is, the value of equation (34) is zero.
  • the three lenses with the crystal axis [00 1] as the optical axis so as to have a rotational positional relationship of 30 degrees apart from each other about the optical axis, the birefringence of the two lenses is canceled out by the canceling action.
  • the rotationally asymmetric component can be removed. Then, it can be seen that even if such a set of three lenses is used, it is convenient to make ⁇ Rj and ⁇ Sj equal for each imaging light flux.
  • the method of reducing rotationally asymmetric birefringence for the lens having the crystal axis [111] as the optical axis and the lens having the crystal axis [001] as the optical axis is based on the above two lenses or three lenses.
  • the present invention is not limited to cancellation of rotationally asymmetric components due to mutual rotation of the lenses.
  • the crystal lens has a rotational asymmetry with a period of 3 degrees
  • a rotationally asymmetric component of birefringence can be removed by its canceling action.
  • the M lenses are mutually (1207 M) centered on the optical axis.
  • the rotationally asymmetric component of birefringence can be removed by the canceling action.
  • N is an arbitrary integer of 3 or more crystals whose optical axis is the crystal axis [00 1]
  • the N lenses are set so as to have a rotational positional relationship separated by (90 ZN) degrees about the optical axis, so that the birefringent rotationally asymmetric component is canceled out by the canceling action. Can be removed.
  • the rotation angle of each crystal lens may be a value obtained by adding the rotation asymmetric period 3 to each of the above values (120 / M, 90 / N), as in the above-described embodiment.
  • the number of lenses for canceling the birefringent rotationally asymmetric component may be two, but in the above method, any three or more lenses are used to cancel the birefringent rotationally asymmetric component. Therefore, the restriction on the lens design is reduced compared to the case of two lenses, which is convenient. That is, a lens group including a large number of crystal lenses can be used to make ⁇ Rj and ⁇ Sj equal for each imaged light beam.
  • the above-described cancellation effect is most effectively obtained. It goes without saying that an offset effect can be obtained.
  • L is an arbitrary integer of 3 or more crystal lenses with the crystal axis [01 1] as the optical axis.
  • the L lenses may be set so as to have a rotational positional relationship of (180 / L) degrees apart from each other about the optical axis.
  • the number of lenses for canceling the rotationally asymmetric term proportional to cos (2c j) can be selected to an arbitrary value. This is convenient because the restrictions on the lens design are reduced.
  • the rotationally asymmetric term proportional to cos (4 j) uses two lenses that are rotated 45 degrees about the optical axis, similar to a lens that uses the crystal axis [00 1] as the optical axis. It is possible to offset by. Furthermore, from the same considerations as above, it is possible to cancel out the rotationally asymmetric birefringent component by using three lenses of approximately equal thickness with the crystal axis [01 1] as the optical axis. In this case, the three lenses have a rotational positional relationship of 30 degrees apart from each other about the optical axis, that is, the direction of the crystal axis [100] in the plane perpendicular to the optical axis is the center of the optical axis. It is possible to cancel the rotationally asymmetric component of birefringence by setting the rotation position relationship so as to be 30 degrees apart from each other (30-degree rotation three-lens group).
  • P is an arbitrary integer of 2 or more crystal lenses with the crystal axis [01 1] as the optical axis.
  • the P lenses may be set so as to have a rotational positional relationship of (907P) degrees apart from each other about the optical axis.
  • the number of lenses for canceling the rotationally asymmetric term proportional to cos (4c j) can be selected to an arbitrary value. This is convenient because the restrictions on the lens design are reduced.
  • the above L lenses arranged close to each other along the optical axis are used.
  • the number of lens groups for canceling the rotationally asymmetric term proportional to cos (4o) j) is not limited to two, and three or more lens groups can be used. This is convenient because the restrictions on the lens design are reduced.
  • the number of lenses for canceling the rotationally asymmetric component of birefringence may be two, but in the above method, three or more arbitrary lenses are used. Since the rotationally asymmetric component of refraction can be canceled out, the restriction on the lens design is reduced as compared with the case of two lenses, which is preferable.
  • the rotation direction of each of the multiple lenses should be within ⁇ 4 degrees with respect to the predetermined angle. It is desirable to suppress it. If the rotation angle setting error is larger than the allowable value, there is a problem that the effect of eliminating birefringence according to the present invention is reduced, and the residual birefringence deteriorates the imaging performance. It is also desirable that the direction error of the specified crystal axis, which should be substantially coincident with the optical axis, with the optical axis be kept within about ⁇ 4 degrees. If the setting error of the angle between the specified crystal axis and the optical axis becomes larger than this allowable value, there is a problem that the imaging performance is deteriorated due to the residual birefringence, as in the case described above.
  • the directional error between the specified crystal axis and the optical axis needs to be smaller than the above-mentioned angle error range.
  • both of these angle errors be ⁇ 2 degrees or less.
  • the optical system targets a pattern with a k 1 factor of about 0.5, Even if both of these angle errors are reduced to about ⁇ 6 degrees, practically sufficient imaging performance can be obtained.
  • the crystal lattice constants in the manufacturing process of the crystal material which is the material of the crystal lens, and the processing (grinding and polishing) of the crystal lens are required. It is preferable to irradiate the crystal with X-rays having a near wavelength and measure the diffraction pattern to confirm the crystal axis direction, that is, to provide crystal axis direction confirmation means.
  • the first evaluation amount Rj ′ and the second evaluation amount Sj j is represented by the following equations (9) and (10), respectively.
  • the first evaluation amount R j ′ and the second The evaluation quantity S j ′ is expressed by the following equations (11) and (12), respectively.
  • the crystal axis [11 1] is within the lens group having the optical axis.
  • the sum of the optical path lengths ⁇ L 11 1 of the lens group, the sum of the optical path lengths ⁇ L 001 in the lens group whose crystal axis [001] is the optical axis, and the optical path in the lens group whose crystal axis [01 1] is the optical axis When the relationship shown in the following expression (13) is satisfied with the sum of lengths ⁇ L 011, both ⁇ Rj and ⁇ S j can be set to 0.
  • the crystal axis and rotation of each crystal lens are adjusted so that the variation of ⁇ R j and ⁇ S j falls within the range of ⁇ ⁇ 2 or ⁇ ⁇ 20 as described above.
  • a method of removing the adverse effect of birefringence in the entire optical system by a combination of lens groups in which rotational asymmetry is canceled is a method of reducing the adverse effect of birefringence in the present invention.
  • this is only an example. That is, the first total evaluation amount ⁇ ⁇ ⁇ ⁇ ⁇ R j and the second total evaluation amount ⁇ S j of the optical system as a whole are not limited to the combination of the rotating lens groups as described above. It goes without saying that any other method may be used as long as the light flux condensed at any one of the above points is set to be equal.
  • FIG. 6 is a diagram schematically showing a configuration of a projection optical system according to a second embodiment of the present invention.
  • the wavelength is applying the present invention to 1 5 7 nm of F 2 catadioptric projection optical system is aberration correction is optimized for laser scratch.
  • the projection optical system 200 (corresponding to the projection optical system 300 in FIG. 1) of the second embodiment, one point on the reticle 201 (corresponding to the reticle 101 in FIG. 1) is emitted.
  • the light beam enters a mirror block 203 as an optical path changing means via a lens 204 arranged along an optical axis AX200a.
  • the light beam reflected by the mirror 203 of the mirror block 203 is passed through the lenses 205 and 206 arranged along the optical axis AX200b to form the concave M mirror 2 It is incident on 20.
  • the light beam reflected by the concave reflecting mirror 220 enters the mirror block 203 again through the lenses 206 and 205.
  • the luminous flux reflected by the flat mirror 203 b of the mirror block 203 is transmitted to the wafer 2 via the lenses 207 to 212 arranged along the optical axis AX200a. 0 2 (corresponding to wafer 102 in Fig. 1) Focus on one point above.
  • reticle 201 is drawn
  • the projected image of the pattern is formed.
  • all the lenses 204 to 212 are formed of calcium fluoride crystals (fluorite).
  • the influence of the birefringence of the projection optical system 200 can be calculated by the total evaluation amounts ⁇ ⁇ R j and ⁇ S j of the present invention. Based on the amounts ⁇ R j and ⁇ S j, it is possible to minimize the adverse effect of the birefringence of the projection optical system 200.
  • the reflection refractive optical system according to the second embodiment, some crystal lenses are arranged on an optical axis different from the other crystal lenses, and the plane mirrors 203 a and 203 b and concave surfaces Due to the reflection action of the reflector 220, the direction of the X axis, which is the reference for the rotation angle around the optical axis of each crystal lens, also fluctuates, and the crystal lenses 205, 206 form an image.
  • the difference between the first embodiment and the first embodiment is that the light path reciprocates in the path.
  • the setting of the XYZ axes in the catadioptric projection optical system 200 will be described.
  • X 0 Y 0 The Z0 coordinate system is set. That is, the downward direction along the optical axis AX200a, which is the traveling direction of the exposure light, is defined as the direction of the + Z0 axis, the horizontal rightward direction is defined as the direction of the + X0 axis on the plane of FIG.
  • the forward direction is set as + Y0 axis direction.
  • the X0Y0Z0 coordinate system is a right-handed system.
  • the above-mentioned angles 0j, pj, and ⁇ j are obtained with reference to the X0Y0Z0 coordinate system, and these are substituted into equations (1) to (6).
  • the evaluation amounts R j and S j are calculated.
  • the traveling direction of the light beam is rightward in the figure, so that the traveling direction of this light beam is the + Z1 axis and the X1Y1Z1 coordinate is used.
  • the X 1 Y 1 Z 1 coordinate system is transformed into a left-handed coordinate system (hereinafter simply referred to as “left-handed system”) by the reflection effect of the plane mirror 203 a.
  • the rightward direction along the optical axis AX200b which is the traveling direction of the exposure light, is the direction of the + Z1 axis
  • the downward direction in the figure is the direction of the + X1 axis
  • the forward direction of the drawing is the + Y1 axis direction.
  • the XIYlZ1 coordinate system is a left-handed system, it is necessary to pay attention to the sign of the angles pj and ⁇ j shown in FIGS. 4 and 5.
  • the Y-axis And the Y 'axis is opposite to the direction in FIGS. 4 and 5.
  • the rotation angle pj and the angle ⁇ j is defined as the positive direction of rotation from the X axis (X 'axis) to the Y axis ( ⁇ ' axis), in the left-handed X 1 ⁇ 1 ⁇ 1 coordinate system .
  • the forward direction of rotation is also opposite to the direction shown in FIGS. 4 and 5. However, the rotation direction from the X1 axis to the ⁇ 1 axis direction is still positive.
  • the traveling direction of the light beam is directed leftward in the figure, so that the ⁇ 2 ⁇ 2 ⁇ 2 coordinate system is set with the traveling direction of this light beam as the + ⁇ 2 axis.
  • the ⁇ 2 ⁇ 2 ⁇ 2 coordinate system returns to the right-handed system due to the reflecting action of the concave reflecting mirror 220. That is, the leftward direction along the optical axis ⁇ 200b, which is the direction of travel of the exposure light, is set as the + Z2 axis direction, the upward direction in the figure is set as the + X2 axis direction, and the depth direction of the paper is set as the + Y2 axis direction. I do.
  • the crystal axis [0 0 1] (or the crystal axes [1 1 1] and [0 1 1]) coincides with the traveling direction of the light flux. It should be noted that the sign of each crystal axis is reversed between the case where the light beam travels rightward and the case where it travels leftward in the lenses 205, 206. In other words, the crystal axis that was [1 1 1] when the light beam travels to the right is treated as the crystal axis [1-1-1-1] when the light beam travels to the left. Similarly, the crystal axis [100] is treated as the crystal axis [_100], and the crystal axis [1-100] is treated as the crystal axis [-110].
  • the traveling direction of the light beam is set with the traveling direction of this light beam as the + Z 3 axis.
  • the X3Y3Z3 coordinate system is converted again into a left-handed system by the reflection operation of the plane mirror 203b. That is, the downward direction along the optical axis A X200a, which is the traveling direction of the exposure light, is defined as the direction of + Z3 axis, the rightward direction in the figure is defined as the direction of + X3 axis, and the depth direction of the paper is defined as the direction of + Y3 axis.
  • the angles 0 j, pj, and j are determined with reference to the X 3 Y 3 Z 3 coordinate system, and are substituted into the equations (1) to (6).
  • the total evaluation amounts ⁇ Rj and ⁇ Sj obtained by adding the evaluation amounts Rj and Sj of the respective crystal lenses obtained in this manner are respectively calculated as the influence of the birefringence in the catadioptric projection optical system 200. What can be used as an index is the same as in the case of the refraction type projection optical system 100 according to the first embodiment. Also, for all the imaging rays in the imaging luminous flux that emits one point on the reticle 201 and converges to one point on the wafer 202, the predetermined values of the total evaluation amounts ⁇ R j and ⁇ S j are centered.
  • the crystal axis and the rotation angle of each crystal lens are adjusted so that the variation within the range falls within the range of ⁇ / 2 or ⁇ / 20, for example. oj, by setting the thickness, radius of curvature, spacing, etc. of all lenses, it is possible to realize an optical system that minimizes the adverse effects of birefringence. This is the same as the case of the refraction type projection optical system 100.
  • the crystal axis [1 1 1] of fluorite is made to coincide with the optical axis AX200b.
  • the crystal axis [1-10] is arranged to be rotated relative to the optical axis by 60 degrees or 180 degrees.
  • the crystal axis [01 1] of the fluorite is aligned with the optical axis AX 200a, and the crystal axis [100] is 45 degrees around the optical axis. Rotate them relative to each other.
  • the fluorite crystal axis [001] is Align with the axis AX 200a and the direction of the crystal axis [100].
  • the crystal axis [001] of the fluorite is made to coincide with the optical axis AX200a, and the direction of the crystal axis [100] is changed to the crystal axis of the crystal lenses 211 and 212.
  • the values of the total evaluation amounts ⁇ R j and ⁇ S j are set within a predetermined range. Setting is easy.
  • calcium fluoride crystal (fluorite) is used as the birefringent optical material.
  • the present invention is not limited to this, and other uniaxial crystals, for example, barium fluoride may be used.
  • other crystal materials that are transparent to ultraviolet light can be used.
  • barium fluoride crystals have already been developed for large crystal materials exceeding 200 mm in diameter, and are promising as lens materials. In this case, it is preferable that the crystal axis orientation such as parium fluoride (BaF 2 ) is also determined according to the present invention.
  • the present invention is applied to the projection optical system.
  • the present invention is not limited to this, and may be applied to an optical system for inspecting the projection optical system, for example, an optical system for measuring aberration. Can also be applied.
  • the optical system from the object plane to the pupil plane and the parallel light beam are different. In some cases, the configuration of an optical system for condensing light on the image plane is used.
  • the reticle 101 (20 1) An imaging light flux from one point on the wafer 102 to one point on the wafer 102 (202) cannot exist, but this imaging light flux is focused from one point on the object plane to the pupil plane. It is apparent that the present invention can be applied in the same manner as in the above-described embodiment by treating it as an image light beam or an image light beam condensed at one point on the image plane.
  • the reticle (mask) is illuminated by the illumination device (illumination step), and the transfer pattern formed on the mask is exposed on the photosensitive substrate using the projection optical system.
  • a micro device semiconductor element, imaging element, liquid crystal display element, thin film magnetic head, etc.
  • FIG. 7 refers to the flowchart of FIG. 7 for an example of a technique for obtaining a semiconductor device as a microdevice by forming a predetermined circuit pattern on a wafer or the like as a photosensitive substrate using the exposure apparatus of each embodiment. I will explain.
  • a metal film is deposited on one lot of wafers.
  • a photoresist is applied on the metal film on the one lot of wafers.
  • the pattern image on the mask is sequentially exposed and transferred to each shot area on the single wafer through the projection optical system. Is done.
  • step 304 after the photoresist on the one lot of wafers is developed, in step 305, etching is performed on the one lot of wafers using the resist pattern as a mask. As a result, a circuit pattern corresponding to the pattern on the mask is formed in each shot area on each wafer.
  • a device such as a semiconductor element is manufactured by forming a circuit pattern of an upper layer and the like.
  • a semiconductor device manufacturing method a semiconductor device having an extremely fine circuit pattern can be obtained with high throughput.
  • steps 301 to 305 a metal is vapor-deposited on the wafer, a resist is applied on the metal film, and the respective steps of exposure, development, and etching are performed.
  • a resist may be applied on the silicon oxide film, and each step of exposure, development, etching and the like may be performed.
  • a liquid crystal display device as a micro device can be obtained by forming a predetermined pattern (circuit pattern, electrode pattern, etc.) on a plate (glass substrate).
  • a predetermined pattern circuit pattern, electrode pattern, etc.
  • a plate glass substrate
  • FIG. 8 a so-called photolithography step is performed in which a pattern of a mask is transferred and exposed to a photosensitive substrate (a glass substrate coated with a resist or the like) using the exposure apparatus of each embodiment. Is executed.
  • a predetermined pattern including a large number of electrodes and the like is formed on the photosensitive substrate.
  • the exposed substrate is subjected to various processes such as a developing process, an etching process, a resist stripping process, etc., so that a predetermined pattern is formed on the substrate, and the process proceeds to the next color filter forming process 402.
  • a large number of sets of three dots corresponding to R (Red), G (Green), and B (Blue) are arranged in a matrix, or R, G , B.
  • a plurality of sets of three stripe filters are arranged in the horizontal scanning line direction to form a color filter.
  • a cell assembling step 403 is performed.
  • the substrate having the predetermined pattern obtained in the pattern forming step 401, the color filter obtained in the color filter forming step 402, and the like are used. Assemble the liquid crystal panel (liquid crystal cell). In the cell assembling step 403, for example, between the substrate having a predetermined pattern obtained in the pattern forming step 401 and the color filter obtained in the color forming step 402, for example. Injects liquid crystal to manufacture liquid crystal panels (liquid crystal cells).
  • a module assembling step 404 components such as an electric circuit and a pack light for performing a display operation of the assembled liquid crystal panel (liquid crystal cell) are attached to complete a liquid crystal display element.
  • components such as an electric circuit and a pack light for performing a display operation of the assembled liquid crystal panel (liquid crystal cell) are attached to complete a liquid crystal display element.
  • the present invention is applied to the projection optical system mounted on the exposure apparatus.
  • the present invention is not limited to this, and may be applied to other general optical systems.
  • the present invention can also be applied.
  • a 1 9 3 nm F 2 laser primary light source for supplying wavelength light
  • a r F excimer laser primary light source and 1 5 7 nm supplying wave wavelength light of which
  • the present invention is not limited to this.
  • an Ar laser light source that supplies light having a wavelength of 126 nm can be used.

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Abstract

Système optique présentant des performances optiques favorables sans être sensiblement influencé par la biréfringence, même si une matière de cristal biréfringent, p. ex. fluorite, est utilisée. Le système (100) optique comporte des éléments optiques cristallins se composant de cristaux d'un système cubique. Les dispositifs optiques cristallins comprennent des éléments (105, 106) optiques cristallins dont les premiers axes cristallins sont alignés sur l'axe optique, et d'autres éléments (109, 110) optiques cristallins dont les deuxièmes axes cristallins sont alignés sur l'axe optique. Afin d'éviter sensiblement un effet dû à la biréfringence, il est fait en sorte qu'une première valeur d'évaluation totale ΣRj, représentant le total de premières valeurs d'évaluation Rj relatives aux éléments optiques cristallins, présente une relation prédéterminée, par rapport aux rayons lumineux du faisceau lumineux imageur focalisé sur au moins un point donné du plan d'image du système optique ou sur un objet, avec une deuxième valeur d'évaluation totale ΣSj, représentant le total de deuxièmes valeurs d'évaluation Sj relatives aux éléments optiques cristallins.
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US6995908B2 (en) 2001-10-30 2006-02-07 Asml Netherlands B.V. Methods for reducing aberration in optical systems
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JPH1154411A (ja) * 1997-07-29 1999-02-26 Canon Inc 投影光学系及びそれを用いた投影露光装置
WO2000041226A1 (fr) * 1999-01-06 2000-07-13 Nikon Corporation Systeme optique de projection, procede de fabrication associe et appareil d'exposition par projection utilisant ce systeme
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US6947192B2 (en) 2001-06-01 2005-09-20 Asml Netherlands B.V. Correction of birefringence in cubic crystalline optical systems
US7009769B2 (en) 2001-06-01 2006-03-07 Asml Netherlands B.V. Correction of birefringence in cubic crystalline optical systems
US7075696B2 (en) 2001-06-01 2006-07-11 Asml Netherlands B.V. Correction of birefringence in cubic crystalline optical systems
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US6995908B2 (en) 2001-10-30 2006-02-07 Asml Netherlands B.V. Methods for reducing aberration in optical systems
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