WO2002101828A3 - Verfahren zum umschmelzen von auf verbindungsstellen aufgebrachtem lotmaterial - Google Patents

Verfahren zum umschmelzen von auf verbindungsstellen aufgebrachtem lotmaterial Download PDF

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Publication number
WO2002101828A3
WO2002101828A3 PCT/EP2002/005312 EP0205312W WO02101828A3 WO 2002101828 A3 WO2002101828 A3 WO 2002101828A3 EP 0205312 W EP0205312 W EP 0205312W WO 02101828 A3 WO02101828 A3 WO 02101828A3
Authority
WO
WIPO (PCT)
Prior art keywords
solder material
connection points
melting down
down solder
semiconductor product
Prior art date
Application number
PCT/EP2002/005312
Other languages
English (en)
French (fr)
Other versions
WO2002101828A2 (de
Inventor
Peter Grambow
Thomas Gutt
Marc Tornow
Original Assignee
Infineon Technologies Ag
Peter Grambow
Thomas Gutt
Marc Tornow
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Infineon Technologies Ag, Peter Grambow, Thomas Gutt, Marc Tornow filed Critical Infineon Technologies Ag
Publication of WO2002101828A2 publication Critical patent/WO2002101828A2/de
Publication of WO2002101828A3 publication Critical patent/WO2002101828A3/de

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/10—Bump connectors ; Manufacturing methods related thereto
    • H01L24/11—Manufacturing methods
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/0556—Disposition
    • H01L2224/05568—Disposition the whole external layer protruding from the surface
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/05573—Single external layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/13001—Core members of the bump connector
    • H01L2224/13099—Material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01005—Boron [B]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01006—Carbon [C]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01023—Vanadium [V]
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    • H01—ELECTRIC ELEMENTS
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    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01058—Cerium [Ce]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01075—Rhenium [Re]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01079—Gold [Au]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01082—Lead [Pb]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
    • H01L2924/0132—Binary Alloys
    • H01L2924/01322—Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
    • H01L2924/014—Solder alloys
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/102—Material of the semiconductor or solid state bodies
    • H01L2924/1025—Semiconducting materials
    • H01L2924/1026—Compound semiconductors
    • H01L2924/1032—III-V
    • H01L2924/10329—Gallium arsenide [GaAs]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1306—Field-effect transistor [FET]
    • H01L2924/13063—Metal-Semiconductor Field-Effect Transistor [MESFET]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1306—Field-effect transistor [FET]
    • H01L2924/13064—High Electron Mobility Transistor [HEMT, HFET [heterostructure FET], MODFET]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/14—Integrated circuits
    • H01L2924/141—Analog devices
    • H01L2924/1423—Monolithic Microwave Integrated Circuit [MMIC]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/35—Mechanical effects
    • H01L2924/351—Thermal stress
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
    • H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
    • H05K3/34—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by soldering
    • H05K3/3494—Heating methods for reflowing of solder

Abstract

Bei dem erfindungsgemäßen Verfahren wird ein Lotmaterial mittels eines RTP-Verfahrens in vergleichsweise kurzer Zeit umgeschmolzen. Dadurch wird die thermische Belastung bereits vorhandener Strukturen verringert. Nach dem Umschmelzen ist das Lotmaterial metallurgisch exakt definiert und das Halbleiterprodukt kann nach dieser Prozedur ohne Qualitäts- und Zuverlässigkeitsrisiko über längere Zeiträume gelagert werden, bis das Verloten des Halbleiterprodukts mit einem Träger erfolgt.
PCT/EP2002/005312 2001-06-08 2002-05-14 Verfahren zum umschmelzen von auf verbindungsstellen aufgebrachtem lotmaterial WO2002101828A2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE10127889A DE10127889A1 (de) 2001-06-08 2001-06-08 Verfahren zum Umschmelzen von auf Verbindungsstellen aufgebrachtem Lotmaterial
DE10127889.6 2001-06-08

Publications (2)

Publication Number Publication Date
WO2002101828A2 WO2002101828A2 (de) 2002-12-19
WO2002101828A3 true WO2002101828A3 (de) 2003-09-12

Family

ID=7687658

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/EP2002/005312 WO2002101828A2 (de) 2001-06-08 2002-05-14 Verfahren zum umschmelzen von auf verbindungsstellen aufgebrachtem lotmaterial

Country Status (2)

Country Link
DE (1) DE10127889A1 (de)
WO (1) WO2002101828A2 (de)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102005051330B4 (de) 2005-10-25 2015-04-02 Infineon Technologies Ag Verfahren zum Herstellen und Reinigen von oberflächenmontierbaren Außenkontaktsockeln
CN101197296B (zh) * 2006-12-04 2010-08-11 中芯国际集成电路制造(上海)有限公司 无助焊剂的凸点回流工艺
US20080197493A1 (en) * 2007-02-16 2008-08-21 Stefan Geyer Integrated circuit including conductive bumps

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1996016442A1 (de) * 1994-11-17 1996-05-30 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Kernmetall-lothöcker für die flip-chip-technik
US5665639A (en) * 1994-02-23 1997-09-09 Cypress Semiconductor Corp. Process for manufacturing a semiconductor device bump electrode using a rapid thermal anneal
EP0955676A2 (de) * 1997-11-20 1999-11-10 Texas Instruments Incorporated Scheibenbereichsanordnung von Packungen in Chip-Grösse
US6239013B1 (en) * 1998-02-19 2001-05-29 Texas Instruments Incorporated Method for transferring particles from an adhesive sheet to a substrate

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4333155A1 (de) * 1993-09-29 1995-03-30 Siemens Ag RTP-Verfahren mit erhöhter Reaktionsrate
DE19504350C2 (de) * 1995-02-10 1997-04-10 Fraunhofer Ges Forschung Verfahren zum Herstellen eines Kontakthöckers durch Umschmelzen einer Kontaktflächenmetallisierung
DE19839092A1 (de) * 1998-08-27 2000-03-09 Wacker Siltronic Halbleitermat Verfahren und Vorrichtung für die Wärmebehandlung von Halbleiterplatten
DE19920252A1 (de) * 1999-05-03 2000-11-16 Rena Sondermaschinen Gmbh Anlage zur thermischen Behandlung von Substraten
US6312830B1 (en) * 1999-09-02 2001-11-06 Intel Corporation Method and an apparatus for forming an under bump metallization structure

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5665639A (en) * 1994-02-23 1997-09-09 Cypress Semiconductor Corp. Process for manufacturing a semiconductor device bump electrode using a rapid thermal anneal
WO1996016442A1 (de) * 1994-11-17 1996-05-30 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Kernmetall-lothöcker für die flip-chip-technik
EP0955676A2 (de) * 1997-11-20 1999-11-10 Texas Instruments Incorporated Scheibenbereichsanordnung von Packungen in Chip-Grösse
US6239013B1 (en) * 1998-02-19 2001-05-29 Texas Instruments Incorporated Method for transferring particles from an adhesive sheet to a substrate

Also Published As

Publication number Publication date
WO2002101828A2 (de) 2002-12-19
DE10127889A1 (de) 2002-12-19

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