WO2002089205A2 - Support de raccordement pour composant electronique et procede de production de ce support - Google Patents
Support de raccordement pour composant electronique et procede de production de ce support Download PDFInfo
- Publication number
- WO2002089205A2 WO2002089205A2 PCT/DE2002/001279 DE0201279W WO02089205A2 WO 2002089205 A2 WO2002089205 A2 WO 2002089205A2 DE 0201279 W DE0201279 W DE 0201279W WO 02089205 A2 WO02089205 A2 WO 02089205A2
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- base body
- component
- underside
- contacts
- connection carrier
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 10
- 239000004020 conductor Substances 0.000 claims abstract description 24
- 239000011810 insulating material Substances 0.000 claims abstract description 9
- 239000002184 metal Substances 0.000 claims description 18
- 239000011248 coating agent Substances 0.000 claims description 11
- 238000000576 coating method Methods 0.000 claims description 11
- 229920000642 polymer Polymers 0.000 claims description 10
- 238000000034 method Methods 0.000 claims description 7
- 150000001875 compounds Chemical class 0.000 claims description 3
- 230000015572 biosynthetic process Effects 0.000 claims description 2
- 238000003856 thermoforming Methods 0.000 claims description 2
- 238000004382 potting Methods 0.000 claims 1
- 238000007493 shaping process Methods 0.000 claims 1
- 238000005553 drilling Methods 0.000 abstract description 4
- 238000003754 machining Methods 0.000 abstract description 2
- 238000001746 injection moulding Methods 0.000 description 6
- 239000000758 substrate Substances 0.000 description 6
- 239000000463 material Substances 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000005266 casting Methods 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 210000004072 lung Anatomy 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000004080 punching Methods 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 125000006850 spacer group Chemical group 0.000 description 1
- 238000010897 surface acoustic wave method Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49827—Via connections through the substrates, e.g. pins going through the substrate, coaxial cables
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/12—Mountings, e.g. non-detachable insulating substrates
- H01L23/13—Mountings, e.g. non-detachable insulating substrates characterised by the shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4814—Conductive parts
- H01L21/4846—Leads on or in insulating or insulated substrates, e.g. metallisation
- H01L21/486—Via connections through the substrate with or without pins
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49811—Additional leads joined to the metallisation on the insulating substrate, e.g. pins, bumps, wires, flat leads
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Definitions
- the invention relates to a connection carrier for at least one electronic component with a three-dimensional molded from insulating material, the surface on its top surface for the component and internal contacts for electrical connection of component connections of the component and the molded on its underside of insulating material, at least partially for formation has bumps coated with contact metal from external contacts, the internal contacts being connected via conductor tracks to respectively assigned external contacts.
- the invention also relates to a method for producing such a connection carrier.
- an intermediate carrier for electrical components formed from insulating material is known, on the underside of which a large number of crenellated bumps are circumferentially arranged, which serve as external contacts with a metal coating.
- a chip is arranged on the upper side in the middle area, the connections of which are connected to conductor tracks via bond wires, which run in the form of rays in groove-like depressions in the base body to the outer edge and are connected there to the external contacts via vertical grooves or through holes.
- This intermediate carrier has a very large expansion compared to the actual component, which is justified if a component, for example an IC, has to be contacted with a very large number of connections.
- An injection-molded, three-dimensional substrate made of an electrically insulating polymer is also known from EP 0 782 765, on the underside of which polymer bumps formed during injection molding are arranged in a flat manner.
- This technology is called PSGA (Polymer Stud Grid Array) net.
- the polymer bumps are provided with a solderable end surface and thus form external connections which are connected via integrated conductor tracks to internal connections for a semiconductor component arranged on the substrate.
- the polymer bumps serve as elastic spacers of the module compared to a printed circuit board and are thus able to compensate for different expansion between the printed circuit board and the intermediate carrier.
- the semiconductor component can either be contacted on the underside of the intermediate carrier via bond wires and connected via conductor tracks to the polymer bumps formed on the same side.
- Micro-holes with a diameter of less than 200 ⁇ m are provided for the plated-through hole, which are coated with a conductive surface. Since such micro bores can hardly be produced with mechanical drills anymore, it has started to be produced by laser drilling. However, injection molding can only be used to form base bodies with a certain minimum thickness, which up to now has not allowed the economical use of a laser to make the necessary micro-holes.
- EP 0 645 953 A1 also discloses a method for producing a substrate, in which the substrate is provided with a depression in which the component is sunk in order to keep the overall thickness of the module small.
- the through bores for electrical the connection of the different substrate planes lies in the area of the full thickness of the substrate, while below the component there are only relatively wide holes for heat dissipation formed during injection molding.
- connection carrier of the type mentioned at the outset and a manufacturing method for this indicate sen terminal carrier, on the one hand has the rule due to its geometric ⁇ design of the required stability and reliability by an appropriate wall thickness, but on the other hand a simple and economical production of the conductor patterns and via holes, in particular by means of laser machining possible.
- the connection carrier should also require as little additional space as possible with regard to the component to be contacted.
- connection carrier mentioned at the outset in that the base body has at least one via section with reduced thickness due to at least one depression in its underside and / or top side, and in the region of the via section at least one via contact between the top side and the underside Microbore is provided and that each microbore is connected on the upper side via a conductor track with an internal contact and on the underside via a conductor track with an external contact, the conductor tracks in the area of the recess each being guided over a bevelled side wall of this recess.
- connection carrier Due to the geometry of the connection carrier according to the invention, this can generally have a wall thickness, as is required for injection molding or other reasons, while this wall thickness is only partially reduced in the areas in which a through-connection is to take place.
- the micro bores in the area of the reduced wall thickness are not only much easier and more economical to produce, but the contact coating to be applied is also easier and more reliable to produce because of the shorter length of the bores.
- the depression also preferably has a beveled side wall all around, but at least on one side, which not only means easier injection molding, but above all also the production of the conductor tracks to the microbores relieved. These can thus be produced over the entire length, for example by laser structuring of a metal layer previously applied over the entire surface.
- An advantageous, inventive method for the manufacture ⁇ lung of a connection carrier is that a flat base body is produced from plastic by thermoforming, wherein at least a partial area by forming a recess with at least one inclined side wall from the upper side and / or the lower side a receives less thickness than the rest of the base body, and wherein polymer bumps are integrally formed on the underside of the base body from the same material that micro-holes in the area of the smaller thickness are still produced by irradiation with a laser and then formed with contact material that both The upper side and the underside of the base body including the polymer bumps are at least partially coated with contact metal, so that the contact layers are structured with a laser beam, with internal contacts on the upper side and external contacts on the bumps on the underside e, to form and isolate conductor tracks between the inner contacts and the through holes on the top and between the through holes and the outer contacts on the bottom.
- the depression is preferably provided on the underside of the base body. It can then be filled with casting compound in a simple manner, even after the component has been applied, as a result of which the microbores are sealed.
- the internal contacts are formed by metal coating of cams, which are integrally formed on the top of the base body and each have at least one obliquely sloping flank over which a conductor track is guided.
- cams which are integrally formed on the top of the base body and each have at least one obliquely sloping flank over which a conductor track is guided.
- These sloping flanks of the inner contacts Cams have the same purpose as the sloping walls of the recess. In this case, too, it is possible to isolate the individual conductor tracks of the entire upper side of the base body from one another by laser structuring.
- the internal contacts are expediently arranged in the area between the support surface for the component and the lateral edge of the base body. If it is a component with relatively few connections, it is sufficient if the internal contacts are only arranged on one side. However, it is entirely possible to arrange corresponding internal contacts on two or more sides, in each case between the component and the lateral edge.
- the base body has peripheral side walls on its upper side, which enclose the component and the internal contacts, so that the base body forms the lower part of a housing in the form of a trough.
- This housing can be closed off by a cover or by simply pouring out the space enclosed by the side walls.
- connection carrier is to accommodate a component which requires a cavity of a certain height on its upper side, this cavity can be created by correspondingly high side walls and a cover. If the side walls of the base body are designed high enough, a flat lid is sufficient. However, it is also possible to put on a cap-like cover, which thus itself forms part of the side walls. However, the free space above and next to the component can also be filled, if appropriate, by pouring out a material which, for example, has certain wave propagation properties.
- FIG. 1 shows a connection carrier designed according to the invention with a lid, in which an invisible component is arranged
- FIG. 2 shows a view from above of the connection carrier of FIG. 1 (without component),
- FIG. 3 shows a view of the underside of the connection carrier from FIG. 1,
- Figure 4 shows a section IN-IN through the connection carrier with component in Figure 1
- Figure 5 is a sectional view N-V from Figure 4 and
- FIG. 6 shows an enlarged detail VI from FIG. 4 (without component).
- connection carrier shown in the drawing consists of a base body 1, which is injection molded three-dimensionally from a polymeric plastic.
- this base body has side walls 2 running laterally towards the upper side. These cusps are provided at least on their end faces with connection contacts 4 in the form of a metal coating. In addition, they are at least partially metallized on their flanks in order to form conductor tracks to be described later.
- the base body 1 has a support surface 5 for a component 6 (see FIGS. 4 and 5), which can be, for example, a surface acoustic wave filter or some other electronic component.
- a component 6 see FIGS. 4 and 5
- cams 7 are provided in each case in a number corresponding to the number of component connections between the support surface 5 for the component 5 and a side wall 2.
- the cams 7 have at least one sloping side flank 7a.
- the cams 7 are each provided with internal contacts 8 in the form of a metal coating.
- the metal coating extends in the form of a conductor track at least over one of the inclined side flanks 7a to the base of the support surface 5.
- the base body 1 has in its central region on the underside a depression 9 which has sloping side walls 9a and thus forms a through-contact region 10 in the base of the base body 1, the thickness d2 of which is considerably less than the thickness d1 of the actual base body
- a row of micro-bores 11 is provided, the inner walls of which are provided with a contact coating 12, which continues at the lower end in the form of a conductor track 13 over the oblique side wall 9a of the depression 9 and on the underside of the base body 1 to an associated one Hump 3 or extends to the external contact 4 carried by the hump.
- this contact coating 12 continues in the form of a conductor track 14 to an associated internal contact 8 on a cam 7.
- the base body is first molded by injection molding, including the side walls 2, the bumps 4 and the depression 9 on the underside and the cams 7 on the top side.
- the required micro-bores 11 are then produced in the region of the depression 9 or the via region 10 by means of a laser bore.
- These micro bores or vias have a diameter of 200 ⁇ m or preferably less, for example.
- the micro-holes are then lined with a coating of contact metal.
- both the top and the bottom of the base body 1 are coated with contact metal.
- these metal layers on the top and on the underside of the base body are structured with a laser in such a way that interconnects 13 and 14 which are insulated from one another and the internal contacts 8 on the cams 7 and the external contacts 4 the humps 3 are saved and isolated from each other.
- This structuring can be done with a laser alone.
- a known method is also possible in which the metal layer is initially covered with an etching resist, the conductor track structures are exposed with the laser by removing the etching resist, and metal regions which are not required are etched away.
- the component 6 is then placed on the support surface 5 of the base body, and its component connections are connected to associated internal contacts 8 via bonding wires 15. As can be seen from FIGS. 4 and 5, the side walls 2 of the base body are higher than the component 6 to be inserted. This keeps a predetermined cavity 16 free above the component, which is closed off with a cover 17.
- the cavity 16 can, however, also be filled with a material with predetermined properties, for example for a specific wave propagation. In this case, the termination at the desired height above the component could also be obtained without an additional cover 17.
- the recess 9 on the underside can also be filled with a sealing compound and sealed.
- a corresponding depression on the top side of the base body 1 could be provided.
- the component in flip-chip technology can be placed directly with its component connections down on the internal contacts, so that there is no space claim next to the component. It is also conceivable to produce the microbores using a suitable mechanical punching or drilling method instead of the laser drilling described.
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing Of Electrical Connectors (AREA)
- Coupling Device And Connection With Printed Circuit (AREA)
Abstract
L'invention concerne un support de raccordement qui comprend un corps de base tridimensionnel en matière isolante, ce corps de base comprenant sur sa face supérieure une surface porteuse destinée à supporter le composant, ainsi que des contacts intérieurs pour le raccordement électrique à des connexions d'éléments du composant et, sur sa face inférieure, des excroissances en matière isolante destinées à former des contacts extérieurs. Les contacts intérieurs sont reliés aux contacts extérieurs sur la face inférieure par l'intermédiaire de pistes conductrices et de connexions transversales. Ces connexions transversales sont réalisées par des microperçages dans une zone de connexion transversale, de préférence par perçage par faisceau laser, l'épaisseur de paroi du corps de base étant réduite dans la zone de connexion transversale par un évidement. Les microperçages et le support de raccordement entier peuvent ainsi être produits de façon rapide et rentable par usinage laser.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE10120257.1 | 2001-04-25 | ||
DE2001120257 DE10120257A1 (de) | 2001-04-25 | 2001-04-25 | Anschlußträger für ein elektronisches Bauelement und Verfahren zu dessen Herstellung |
Publications (2)
Publication Number | Publication Date |
---|---|
WO2002089205A2 true WO2002089205A2 (fr) | 2002-11-07 |
WO2002089205A3 WO2002089205A3 (fr) | 2003-08-07 |
Family
ID=7682669
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/DE2002/001279 WO2002089205A2 (fr) | 2001-04-25 | 2002-04-08 | Support de raccordement pour composant electronique et procede de production de ce support |
Country Status (2)
Country | Link |
---|---|
DE (1) | DE10120257A1 (fr) |
WO (1) | WO2002089205A2 (fr) |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5355283A (en) * | 1993-04-14 | 1994-10-11 | Amkor Electronics, Inc. | Ball grid array with via interconnection |
WO1998027588A1 (fr) * | 1996-12-19 | 1998-06-25 | Telefonaktiebolaget Lm Ericsson (Publ) | Structure de trou d'interconnexion |
US6107109A (en) * | 1997-12-18 | 2000-08-22 | Micron Technology, Inc. | Method for fabricating a semiconductor interconnect with laser machined electrical paths through substrate |
US6114240A (en) * | 1997-12-18 | 2000-09-05 | Micron Technology, Inc. | Method for fabricating semiconductor components using focused laser beam |
WO2001082372A1 (fr) * | 2000-04-20 | 2001-11-01 | Siemens Aktiengesellschaft | Matrice a bossage polymere (polymer stud grid array) comprenant des trous d'interconnexion et procede de production d'un substrat pour une telle matrice a bossage polymere |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0953210A1 (fr) * | 1996-12-19 | 1999-11-03 | TELEFONAKTIEBOLAGET L M ERICSSON (publ) | Structure de montage de puces a bosses comportant des contacts elastiques |
TW420853B (en) * | 1998-07-10 | 2001-02-01 | Siemens Ag | Method of manufacturing the wiring with electric conducting interconnect between the over-side and the underside of the substrate and the wiring with such interconnect |
-
2001
- 2001-04-25 DE DE2001120257 patent/DE10120257A1/de not_active Withdrawn
-
2002
- 2002-04-08 WO PCT/DE2002/001279 patent/WO2002089205A2/fr not_active Application Discontinuation
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5355283A (en) * | 1993-04-14 | 1994-10-11 | Amkor Electronics, Inc. | Ball grid array with via interconnection |
WO1998027588A1 (fr) * | 1996-12-19 | 1998-06-25 | Telefonaktiebolaget Lm Ericsson (Publ) | Structure de trou d'interconnexion |
US6107109A (en) * | 1997-12-18 | 2000-08-22 | Micron Technology, Inc. | Method for fabricating a semiconductor interconnect with laser machined electrical paths through substrate |
US6114240A (en) * | 1997-12-18 | 2000-09-05 | Micron Technology, Inc. | Method for fabricating semiconductor components using focused laser beam |
WO2001082372A1 (fr) * | 2000-04-20 | 2001-11-01 | Siemens Aktiengesellschaft | Matrice a bossage polymere (polymer stud grid array) comprenant des trous d'interconnexion et procede de production d'un substrat pour une telle matrice a bossage polymere |
Also Published As
Publication number | Publication date |
---|---|
DE10120257A1 (de) | 2002-11-14 |
WO2002089205A3 (fr) | 2003-08-07 |
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