WO2002084713A3 - Implanteur ionique a ligne de faisceau d'occlusion - Google Patents

Implanteur ionique a ligne de faisceau d'occlusion Download PDF

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Publication number
WO2002084713A3
WO2002084713A3 PCT/US2002/011292 US0211292W WO02084713A3 WO 2002084713 A3 WO2002084713 A3 WO 2002084713A3 US 0211292 W US0211292 W US 0211292W WO 02084713 A3 WO02084713 A3 WO 02084713A3
Authority
WO
WIPO (PCT)
Prior art keywords
workpiece
ion
occluder
scanning
ion implanter
Prior art date
Application number
PCT/US2002/011292
Other languages
English (en)
Other versions
WO2002084713A2 (fr
Inventor
David S Holbrook
Original Assignee
Varian Semiconductor Equipment
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Varian Semiconductor Equipment filed Critical Varian Semiconductor Equipment
Publication of WO2002084713A2 publication Critical patent/WO2002084713A2/fr
Publication of WO2002084713A3 publication Critical patent/WO2002084713A3/fr

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement
    • H01J37/09—Diaphragms; Shields associated with electron or ion-optical arrangements; Compensation of disturbing fields
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Electron Sources, Ion Sources (AREA)

Abstract

L'invention concerne des systèmes et des procédés d'implantion ionique de matériaux dopants dans des plaquettes à semi-conducteurs. Un implanteur ionique comporte une source permettant de générer un faisceau ionique ; une plaque support permettant de porter une pièce pendant l'implantation ionique ; un mécanisme de balayage permettant de balayer la pièce par rapport au faisceau ionique ; un occluseur permettant d'empêcher au moins une partie du faisceau ionique d'atteindre la pièce pendant au moins une partie du balayage de la pièce, et un translateur d'occluseur permettant la translation de l'occluseur pendant le balayage de la pièce. Le mécanisme de balayage produit la translation de la pièce et la rotation de la pièce autour d'un axe de rotation qui situé au centre ou près du centre de la pièce. L'implanteur ionique peut comporter un système de commande d'uniformité destiné à la commande de la distribution des doses d'ions implantés dans la pièce.
PCT/US2002/011292 2001-04-11 2002-04-10 Implanteur ionique a ligne de faisceau d'occlusion WO2002084713A2 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US28304401P 2001-04-11 2001-04-11
US60/283,044 2001-04-11

Publications (2)

Publication Number Publication Date
WO2002084713A2 WO2002084713A2 (fr) 2002-10-24
WO2002084713A3 true WO2002084713A3 (fr) 2003-03-13

Family

ID=23084247

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2002/011292 WO2002084713A2 (fr) 2001-04-11 2002-04-10 Implanteur ionique a ligne de faisceau d'occlusion

Country Status (2)

Country Link
TW (1) TW552629B (fr)
WO (1) WO2002084713A2 (fr)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10325752B1 (en) * 2018-03-27 2019-06-18 Varian Semiconductor Equipment Associates, Inc. Performance extraction set
CN111063600B (zh) * 2019-12-26 2022-10-28 华虹半导体(无锡)有限公司 一种实时监控离子注入剂量的装置及使用方法

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05128997A (ja) * 1991-11-06 1993-05-25 Nissin Electric Co Ltd イオン注入装置
JPH09245722A (ja) * 1996-03-14 1997-09-19 Fujitsu Ltd 多分割イオン注入装置
JPH11126577A (ja) * 1997-10-23 1999-05-11 Sony Corp イオン注入装置
JPH11339711A (ja) * 1998-05-29 1999-12-10 Ulvac Corp イオン注入装置
JPH11339706A (ja) * 1998-05-26 1999-12-10 Sony Corp イオン注入装置及び方法

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05128997A (ja) * 1991-11-06 1993-05-25 Nissin Electric Co Ltd イオン注入装置
JPH09245722A (ja) * 1996-03-14 1997-09-19 Fujitsu Ltd 多分割イオン注入装置
JPH11126577A (ja) * 1997-10-23 1999-05-11 Sony Corp イオン注入装置
JPH11339706A (ja) * 1998-05-26 1999-12-10 Sony Corp イオン注入装置及び方法
JPH11339711A (ja) * 1998-05-29 1999-12-10 Ulvac Corp イオン注入装置

Non-Patent Citations (4)

* Cited by examiner, † Cited by third party
Title
PATENT ABSTRACTS OF JAPAN vol. 017, no. 501 (E - 1429) 9 September 1993 (1993-09-09) *
PATENT ABSTRACTS OF JAPAN vol. 1998, no. 01 30 January 1998 (1998-01-30) *
PATENT ABSTRACTS OF JAPAN vol. 1999, no. 10 31 August 1999 (1999-08-31) *
PATENT ABSTRACTS OF JAPAN vol. 2000, no. 03 30 March 2000 (2000-03-30) *

Also Published As

Publication number Publication date
WO2002084713A2 (fr) 2002-10-24
TW552629B (en) 2003-09-11

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