WO2002055760A1 - Reacteur anodique et son unite reactionnelle - Google Patents

Reacteur anodique et son unite reactionnelle Download PDF

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Publication number
WO2002055760A1
WO2002055760A1 PCT/KR2002/000028 KR0200028W WO02055760A1 WO 2002055760 A1 WO2002055760 A1 WO 2002055760A1 KR 0200028 W KR0200028 W KR 0200028W WO 02055760 A1 WO02055760 A1 WO 02055760A1
Authority
WO
WIPO (PCT)
Prior art keywords
workpiece
reaction unit
electrode
insulator
anodic reactor
Prior art date
Application number
PCT/KR2002/000028
Other languages
English (en)
Inventor
Choong-Mo Nam
Original Assignee
Telephus, Inc.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from KR10-2001-0079334A external-priority patent/KR100453454B1/ko
Application filed by Telephus, Inc. filed Critical Telephus, Inc.
Publication of WO2002055760A1 publication Critical patent/WO2002055760A1/fr

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D11/00—Electrolytic coating by surface reaction, i.e. forming conversion layers
    • C25D11/02—Anodisation
    • C25D11/32—Anodisation of semiconducting materials

Definitions

  • the present invention relates to an anodic reactor.
  • Anodization is a technique for forming a porous layer on a
  • a workpiece such as a metal or a semiconductor substrate
  • FIG. 1 is a schematic view showing a conventional anodic
  • a reactor body 10 includes a cylindrical
  • the upper and base bodies 1 1 and 12 define a reaction chamber.
  • the reaction chamber In the reaction chamber,
  • a pair of platinum electrodes 16 and 17 are arranged for applying an
  • the first electrode 16 is installed in the upper body 1 1 so as to
  • substrate 15 is fixedly mounted on an upper surface of the second
  • a sealing ring 13 is interposed between a lower end surface of
  • the reaction chamber is
  • silicon substrate 15 is anodized while the electric current flows from
  • electrolyte including the HF can leak when the sealing rings are mis ⁇
  • the silicon substrate 15 In this case of electrolyte leakage, the silicon substrate 15
  • the present invention has been made in an effort to solve the above
  • anodic reactor capable of preventing the anodic reactor from
  • invention comprises a reaction tank for containing electrolyte, a reaction tank for containing electrolyte, a reaction tank for containing electrolyte, a reaction tank for containing electrolyte, a reaction tank for containing electrolyte, a reaction tank for containing electrolyte, a reaction tank for containing electrolyte, a reaction tank for containing electrolyte, a reaction tank for containing electrolyte, a reaction tank for containing electrolyte, a reaction tank for containing electrolyte, a reaction tank for containing electrolyte, a reaction tank for containing electrolyte, a reaction tank for containing electrolyte, a reaction tank for containing electrolyte, a reaction tank for containing electrolyte, a reaction tank for containing electrolyte, a reaction tank for containing electrolyte, a reaction tank for containing electrolyte, a reaction tank for containing electrolyte, a reaction tank for containing electrolyte,
  • the electrolyte will leak and reach the metal electrode, before
  • reaction unit is detached from the reaction tank and the silicon
  • FIG. 1 is a schematic view showing a conventional anodic
  • FIG. 2 is a schematic view showing an anodic reactor
  • FIG. 3 is an elevational view illustrating a reaction unit of the
  • FIG. 4 is a schematic view for illustrating leakage of electrolyte in the anodic reactor of FIG. 2;
  • FIG. 5 is an elevational view illustrating a reaction unit of the
  • FIG. 6 is a schematic view illustrating an anodic reactor
  • FIG. 2 is a schematic view illustrating an anodic reactor
  • FIG. 3 is an enlarged view illustrating a reaction unit of the anodic
  • reaction units 30 are provided. As shown in FIG. 2, a plurality of reaction units 30 are
  • the reaction tank 20 is divided into a plurality of electrolyte sections by means of platinum meshes 23.
  • Each platinum mesh 23 is supported by a first bar 21
  • platinum mesh 23 is applied with a negative voltage via the first or
  • Each electrolyte section can accommodate at least one
  • reaction unit 30 and two reaction units 30 are depicted in several
  • the reaction unit 30 holds a silicon substrate 28 and is applied
  • reaction unit 30 the silicon substrate 28, the electrolyte, and the
  • the reaction unit 30 comprises a vertically
  • the electrode hook 31 acts as a
  • a workpiece such as a
  • silicon substrate to be treated is mounted. It is preferred that the
  • metal electrode is made from brass.
  • the electrode hook 31 is provided with a first insulator 33,
  • the first insulator 33 is provided with a gas inlet 51 for
  • the electrode hook 31 and the first insulator 33 are tightly connected
  • the metal electrode 32 is provided with a second insulator 34
  • the second insulator 34 is formed in such a way that the
  • second insulator 34 wraps the metal electrode 32 except at a surface
  • the second insulator 34 is provided with a coupling
  • the latches 42 push the silicon substrate 28 so it is tightly fixed to the
  • the first insulator 33 and the second insulator 34 are coupled by
  • An elastic ring can be used for complete sealing between the first insulator 33 and the second insulator 34.
  • a first sealing ring 38 is interposed between the silicon
  • FIG. 4 is a schematic view for illustrating an electrolyte
  • the nitrogen gas passes through the gas passage 52 formed between the electrode hook 31 and the first insulator 33. If there is
  • Leakage can be checked by seeing if bubbles 43 are generated in the
  • auxiliary metal layer can also be used.
  • FIG. 5 is an elevational view illustrating a reaction unit of the
  • reaction unit 30 is provided with a corrosion
  • the corrosion resistance layer 61 prevents the metal
  • FIG. 6 is a schematic view illustrating an annotation reactor
  • the platinum meshes 23 are installed in
  • reaction tank 20 at predetermined angles relative to the surface of
  • each reaction unit 30 is installed in a corresponding section of the
  • reaction tank 20 at the same angle as the platinum mesh 23. It is
  • the platinum meshes 23 and the reaction units 30 are identical to the platinum meshes 23 and the reaction units 30.
  • reaction unit 20 is
  • silicon substrate 28 is mounted faces the surface of the electrolyte 29.
  • reaction unit 20 By arranging the reaction unit 20 in this manner, there are some
  • reaction unit arrangement angle can be varied to as far as an angle
  • reaction units 30 depicted in FIG. 2 and FIG. 5 can be used.
  • reaction tank such that a plurality of silicon
  • substrates can be anodized during each anodization cycle, resulting

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)

Abstract

La présente invention concerne un réacteur anodique comprenant un réservoir réactionnel (20) contenant un électrolyte (29), une pluralité de grilles (23) montées dans le réservoir réactionnel et auxquelles est appliquée une tension négative, et au moins une unité réactionnelle servant à maintenir une pièce dans l'électrolyte et à laquelle est appliquée une tension positive. L'unité réactionnelle du réacteur anodique comprend un conducteur, une électrode servant à recevoir une pièce, et, relié à elle, un premier isolant (33) entourant le conducteur et présentant une entrée de gaz et un passage d'acheminement de gaz, un deuxième isolant (34) servant à isoler l'électrode et la pièce afin d'exclure une surface de la pièce à anodiser, et un élément de fixation monté au niveau du deuxième isolant afin de fixer la pièce sur l'électrode (32).
PCT/KR2002/000028 2001-01-09 2002-01-08 Reacteur anodique et son unite reactionnelle WO2002055760A1 (fr)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
KR2001/1166 2001-01-09
KR20010001166 2001-01-09
KR2001/79334 2001-12-14
KR10-2001-0079334A KR100453454B1 (ko) 2001-01-09 2001-12-14 양극화 반응 장치 및 단위 양극화 반응기

Publications (1)

Publication Number Publication Date
WO2002055760A1 true WO2002055760A1 (fr) 2002-07-18

Family

ID=26638711

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/KR2002/000028 WO2002055760A1 (fr) 2001-01-09 2002-01-08 Reacteur anodique et son unite reactionnelle

Country Status (1)

Country Link
WO (1) WO2002055760A1 (fr)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2427914A1 (fr) * 2009-05-05 2012-03-14 Solexel, Inc. Equipement de haut niveau de productivité pour la fabrication de semi-conducteurs poreux
US9076642B2 (en) 2009-01-15 2015-07-07 Solexel, Inc. High-Throughput batch porous silicon manufacturing equipment design and processing methods
US9401276B2 (en) 2010-02-12 2016-07-26 Solexel, Inc. Apparatus for forming porous silicon layers on at least two surfaces of a plurality of silicon templates
CN106661755A (zh) * 2014-04-30 2017-05-10 赛峰直升机发动机 用于实现阳极处理的装置和阳极处理
US10829864B2 (en) 2009-01-15 2020-11-10 Trutag Technologies, Inc. Apparatus and methods for uniformly forming porous semiconductor on a substrate

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4026781A (en) * 1969-08-07 1977-05-31 Scionics Of California Inc. Anodizing means and techniques
US4131520A (en) * 1977-11-10 1978-12-26 Sprague Electric Company Two-stage anodization of capacitor electrodes
US5441627A (en) * 1993-06-02 1995-08-15 The Furukawa Electric Co., Ltd Metal foil manufacturing method and an anodized film forming apparatus used therefor

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4026781A (en) * 1969-08-07 1977-05-31 Scionics Of California Inc. Anodizing means and techniques
US4131520A (en) * 1977-11-10 1978-12-26 Sprague Electric Company Two-stage anodization of capacitor electrodes
US5441627A (en) * 1993-06-02 1995-08-15 The Furukawa Electric Co., Ltd Metal foil manufacturing method and an anodized film forming apparatus used therefor

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9076642B2 (en) 2009-01-15 2015-07-07 Solexel, Inc. High-Throughput batch porous silicon manufacturing equipment design and processing methods
US10829864B2 (en) 2009-01-15 2020-11-10 Trutag Technologies, Inc. Apparatus and methods for uniformly forming porous semiconductor on a substrate
EP2427914A1 (fr) * 2009-05-05 2012-03-14 Solexel, Inc. Equipement de haut niveau de productivité pour la fabrication de semi-conducteurs poreux
CN102460716A (zh) * 2009-05-05 2012-05-16 速力斯公司 高生产率多孔半导体制造设备
JP2012526398A (ja) * 2009-05-05 2012-10-25 ソレクセル、インコーポレイテッド 生産性が高い多孔質半導体層形成装置
EP2427914A4 (fr) * 2009-05-05 2013-06-05 Solexel Inc Equipement de haut niveau de productivité pour la fabrication de semi-conducteurs poreux
US8999058B2 (en) 2009-05-05 2015-04-07 Solexel, Inc. High-productivity porous semiconductor manufacturing equipment
US9401276B2 (en) 2010-02-12 2016-07-26 Solexel, Inc. Apparatus for forming porous silicon layers on at least two surfaces of a plurality of silicon templates
CN106661755A (zh) * 2014-04-30 2017-05-10 赛峰直升机发动机 用于实现阳极处理的装置和阳极处理
CN106661755B (zh) * 2014-04-30 2019-01-18 赛峰直升机发动机 用于实现阳极处理的装置和阳极处理

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