WO2002045179A1 - Dispositif emetteur de lumiere et son procede de fabrication et dispositif emetteur de lumiere visible - Google Patents

Dispositif emetteur de lumiere et son procede de fabrication et dispositif emetteur de lumiere visible Download PDF

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Publication number
WO2002045179A1
WO2002045179A1 PCT/JP2001/010361 JP0110361W WO0245179A1 WO 2002045179 A1 WO2002045179 A1 WO 2002045179A1 JP 0110361 W JP0110361 W JP 0110361W WO 0245179 A1 WO0245179 A1 WO 0245179A1
Authority
WO
WIPO (PCT)
Prior art keywords
light
emitting device
layer
type
visible
Prior art date
Application number
PCT/JP2001/010361
Other languages
English (en)
French (fr)
Inventor
Jun-Ya Ishizaki
Masato Yamada
Original Assignee
Shin-Etsu Handotai Co.,Ltd.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shin-Etsu Handotai Co.,Ltd. filed Critical Shin-Etsu Handotai Co.,Ltd.
Priority to US10/432,864 priority Critical patent/US20040051109A1/en
Priority to KR10-2003-7006322A priority patent/KR20030059235A/ko
Priority to EP01998176A priority patent/EP1349217A4/en
Publication of WO2002045179A1 publication Critical patent/WO2002045179A1/ja

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/28—Materials of the light emitting region containing only elements of Group II and Group VI of the Periodic Table
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
    • H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Devices (AREA)
  • Electroluminescent Light Sources (AREA)
  • Inorganic Compounds Of Heavy Metals (AREA)
  • Led Device Packages (AREA)
  • Luminescent Compositions (AREA)
PCT/JP2001/010361 2000-11-30 2001-11-28 Dispositif emetteur de lumiere et son procede de fabrication et dispositif emetteur de lumiere visible WO2002045179A1 (fr)

Priority Applications (3)

Application Number Priority Date Filing Date Title
US10/432,864 US20040051109A1 (en) 2000-11-30 2001-11-28 Light- emitting device and its manufacturing method and visible-light-emitting device
KR10-2003-7006322A KR20030059235A (ko) 2000-11-30 2001-11-28 발광소자 및 그 제조방법, 가시광 발광장치
EP01998176A EP1349217A4 (en) 2000-11-30 2001-11-28 LUMINOUS ELEMENT AND METHOD FOR ITS MANUFACTURE AND VISIBLE LIGHT EMITTING COMPONENT

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2000366118A JP4431925B2 (ja) 2000-11-30 2000-11-30 発光素子の製造方法
JP2000-366118 2000-11-30

Publications (1)

Publication Number Publication Date
WO2002045179A1 true WO2002045179A1 (fr) 2002-06-06

Family

ID=18836787

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2001/010361 WO2002045179A1 (fr) 2000-11-30 2001-11-28 Dispositif emetteur de lumiere et son procede de fabrication et dispositif emetteur de lumiere visible

Country Status (7)

Country Link
US (1) US20040051109A1 (ja)
EP (1) EP1349217A4 (ja)
JP (1) JP4431925B2 (ja)
KR (1) KR20030059235A (ja)
CN (1) CN1264229C (ja)
TW (1) TW515115B (ja)
WO (1) WO2002045179A1 (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1391941A4 (en) * 2001-04-27 2007-06-27 Shinetsu Handotai Kk METHOD FOR PRODUCING LUMINESCENT ELEMENT

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JP2002324919A (ja) * 2001-02-26 2002-11-08 Sharp Corp 発光ダイオードおよびその製造方法
TWI294699B (en) * 2006-01-27 2008-03-11 Epistar Corp Light emitting device and method of forming the same
TW550839B (en) 2001-07-25 2003-09-01 Shinetsu Handotai Kk Light emitting element and method for manufacturing thereof
US20040140474A1 (en) * 2002-06-25 2004-07-22 Matsushita Electric Industrial Co., Ltd. Semiconductor light-emitting device, method for fabricating the same and method for bonding the same
EP1532288B1 (en) * 2002-08-28 2010-11-17 Moxtronics, Inc. Hybrid beam deposition system and method for fabricating zno films
JP3720341B2 (ja) 2003-02-12 2005-11-24 ローム株式会社 半導体発光素子
JP4034208B2 (ja) * 2003-02-25 2008-01-16 ローム株式会社 透明電極
JP2004296796A (ja) 2003-03-27 2004-10-21 Shin Etsu Handotai Co Ltd 発光素子および発光素子の製造方法
KR101034055B1 (ko) * 2003-07-18 2011-05-12 엘지이노텍 주식회사 발광 다이오드 및 그 제조방법
JP4210748B2 (ja) 2003-08-27 2009-01-21 独立行政法人物質・材料研究機構 酸化亜鉛基積層構造体
US20050051781A1 (en) * 2003-09-08 2005-03-10 United Epitaxy Company, Ltd. Light emitting diode and method of making the same
JP5719493B2 (ja) 2003-12-09 2015-05-20 ザ リージェンツ オブ ザ ユニバーシティ オブ カリフォルニア 表面粗化による高効率の（Ｂ，Ａｌ，Ｇａ，Ｉｎ）Ｎベースの発光ダイオード
KR101361630B1 (ko) * 2004-04-29 2014-02-11 오스람 옵토 세미컨덕터스 게엠베하 방사선 방출 반도체 칩의 제조 방법
KR100622823B1 (ko) * 2004-05-07 2006-09-14 엘지전자 주식회사 발광 소자의 제조 방법
KR100624448B1 (ko) * 2004-12-02 2006-09-18 삼성전기주식회사 반도체 발광소자 및 그 제조방법
KR100770491B1 (ko) * 2005-03-16 2007-10-25 최운용 플라즈마 처리를 통한 광반도체 투명 전극 제조
JP2007042985A (ja) * 2005-08-05 2007-02-15 Showa Denko Kk 窒化ガリウム系化合物半導体発光素子及びその実装体
KR100674888B1 (ko) * 2005-08-25 2007-01-29 에피밸리 주식회사 반도체 발광소자
JP4568197B2 (ja) * 2005-09-15 2010-10-27 三洋電機株式会社 酸化物半導体素子
KR100721514B1 (ko) * 2005-11-01 2007-05-23 서울옵토디바이스주식회사 교류용 백색 발광소자
JP2007173404A (ja) * 2005-12-20 2007-07-05 Rohm Co Ltd 酸化物半導体発光素子
KR100774995B1 (ko) * 2006-03-31 2007-11-09 서울옵토디바이스주식회사 Ｚｎ화합물층을 갖는 수직형 발광다이오드와 그 제조방법
WO2008045423A1 (en) * 2006-10-10 2008-04-17 Structured Materials Inc. Self assembled controlled luminescent transparent conductive photonic crystals for light emitting devices
DE102008003953A1 (de) * 2007-02-28 2008-09-04 Fuji Electric Device Technology Co. Ltd. Verfahren zur Herstellung eines Halbleiterelements
KR100885190B1 (ko) * 2007-06-29 2009-02-24 우리엘에스티 주식회사 발광소자와 그의 제조방법
KR101361575B1 (ko) * 2007-09-17 2014-02-13 삼성전자주식회사 발광 다이오드 패키지 및 그 제조방법
DE102007061261A1 (de) * 2007-12-19 2009-07-02 Bayer Materialscience Ag Leuchtkörper mit LED-DIEs und deren Herstellung
DE102008024517A1 (de) * 2007-12-27 2009-07-02 Osram Opto Semiconductors Gmbh Strahlungsemittierender Körper und Verfahren zur Herstellung eines strahlungsemittierenden Körpers
CN101960603A (zh) * 2008-01-08 2011-01-26 莫克斯特尼克公司 高性能异质结构发光装置及方法
FR2932607B1 (fr) * 2008-06-12 2011-01-14 Commissariat Energie Atomique Procede de passivation des centres de recombinaisons non radiatives d'echantillons en zno et echantillons en zno passive ainsi prepares
CN100565941C (zh) * 2008-08-21 2009-12-02 中国科学院长春光学精密机械与物理研究所 制备太阳盲紫外探测器的方法
JP5498723B2 (ja) * 2009-04-10 2014-05-21 スタンレー電気株式会社 酸化亜鉛系半導体素子及びその製造方法
JP2010280826A (ja) * 2009-06-04 2010-12-16 Mitsubishi Gas Chemical Co Inc 積層型ＺｎＯ系単結晶シンチレータおよびその製造方法
JP2011049448A (ja) * 2009-08-28 2011-03-10 Mitsubishi Chemicals Corp 酸化亜鉛系基板及び酸化亜鉛系基板の製造方法
CN105448937A (zh) * 2009-09-16 2016-03-30 株式会社半导体能源研究所 晶体管及显示设备
KR101608923B1 (ko) 2009-09-24 2016-04-04 가부시키가이샤 한도오따이 에네루기 켄큐쇼 산화물 반도체막 및 반도체 장치
KR101600088B1 (ko) * 2009-10-08 2016-03-07 동우 화인켐 주식회사 레이저 다이싱용 보호막 조성물
KR20230007544A (ko) 2009-11-06 2023-01-12 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제작 방법
KR101924656B1 (ko) 2010-11-02 2018-12-03 우베 고산 가부시키가이샤 (아미드아미노알칸) 금속 화합물, 및 당해 금속 화합물을 사용한 금속 함유 박막의 제조 방법
CN103843145B (zh) 2011-09-29 2017-03-29 株式会社半导体能源研究所 半导体装置
KR20130040706A (ko) * 2011-10-14 2013-04-24 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 반도체 장치의 제작 방법
CN104025301B (zh) 2011-10-14 2017-01-18 株式会社半导体能源研究所 半导体装置
RU2639605C2 (ru) * 2012-06-29 2017-12-21 Люмиледс Холдинг Б.В. Светоизлучающий полупроводниковый прибор на основе элементов ii-vi групп
DE102012109028A1 (de) * 2012-09-25 2014-03-27 Osram Opto Semiconductors Gmbh Optoelektronisches Halbleiterbauteil und Verfahren zur Herstellung eines optoelektronischen Halbleiterbauteils
JP6201480B2 (ja) * 2013-07-23 2017-09-27 日亜化学工業株式会社 発光装置及び照明装置
CN106449911B (zh) * 2016-09-06 2019-05-14 华灿光电（浙江）有限公司 一种发光二极管及其制造方法
CN106449930B (zh) * 2016-09-06 2019-05-14 华灿光电（浙江）有限公司 一种发光二极管及其制造方法
EP4258325A3 (en) 2018-06-07 2024-01-24 Silanna UV Technologies Pte Ltd Optoelectronic device
CN111504523B (zh) * 2020-04-15 2021-07-20 深圳第三代半导体研究院 一种自发光式压光电器件及制备方法
CN112420888B (zh) * 2021-01-21 2021-04-23 华灿光电（浙江）有限公司 紫外发光二极管外延片及其制备方法
JP2022135521A (ja) 2021-03-05 2022-09-15 東レエンジニアリング株式会社 転写システム、転写位置決定装置、および転写方法
CN117813695A (zh) * 2021-08-25 2024-04-02 出光兴产株式会社 发光元件用反射电极

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JPH04133418A (ja) * 1990-09-26 1992-05-07 Toshiba Corp ｐ型亜鉛カルコゲナイド結晶の製造方法
JPH07235505A (ja) * 1993-12-28 1995-09-05 Matsushita Electric Ind Co Ltd 半導体層の結晶成長方法
WO1997048138A2 (en) * 1996-06-11 1997-12-18 Philips Electronics N.V. Visible light emitting devices including uv-light emitting diode and uv-excitable, visible light emitting phosphor, and method of producing such devices
JPH09331105A (ja) * 1996-06-10 1997-12-22 Nec Corp 半導体発光素子とその製造方法
JPH1041546A (ja) * 1996-07-22 1998-02-13 Nippon Sanso Kk 発光素子
DE19921987A1 (de) * 1998-05-13 1999-11-18 Toyoda Gosei Kk Licht-Abstrahlende Halbleitervorrichtung mit Gruppe-III-Element-Nitrid-Verbindungen
WO2000016411A1 (fr) * 1998-09-10 2000-03-23 Rohm Co., Ltd. Del a semi-conducteur et son procede de fabrication
JP2001044500A (ja) * 1999-07-26 2001-02-16 Agency Of Ind Science & Technol Ａ面サファイア基板を用いたＺｎＯ系化合物半導体発光素子およびその製法
JP2001044499A (ja) * 1999-07-26 2001-02-16 Agency Of Ind Science & Technol シリコン基板を用いたＺｎＯ系化合物半導体発光素子およびその製法

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WO2001008229A1 (fr) * 1999-07-26 2001-02-01 National Institute Of Advanced Industrial Science And Technology ELEMENT ELECTROLUMINESCENT A SEMI-CONDUCTEUR A BASE D'UN COMPOSE ZnO
JP2002016285A (ja) * 2000-06-27 2002-01-18 National Institute Of Advanced Industrial & Technology 半導体発光素子
TW550839B (en) * 2001-07-25 2003-09-01 Shinetsu Handotai Kk Light emitting element and method for manufacturing thereof

Patent Citations (9)

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Publication number Priority date Publication date Assignee Title
JPH04133418A (ja) * 1990-09-26 1992-05-07 Toshiba Corp ｐ型亜鉛カルコゲナイド結晶の製造方法
JPH07235505A (ja) * 1993-12-28 1995-09-05 Matsushita Electric Ind Co Ltd 半導体層の結晶成長方法
JPH09331105A (ja) * 1996-06-10 1997-12-22 Nec Corp 半導体発光素子とその製造方法
WO1997048138A2 (en) * 1996-06-11 1997-12-18 Philips Electronics N.V. Visible light emitting devices including uv-light emitting diode and uv-excitable, visible light emitting phosphor, and method of producing such devices
JPH1041546A (ja) * 1996-07-22 1998-02-13 Nippon Sanso Kk 発光素子
DE19921987A1 (de) * 1998-05-13 1999-11-18 Toyoda Gosei Kk Licht-Abstrahlende Halbleitervorrichtung mit Gruppe-III-Element-Nitrid-Verbindungen
WO2000016411A1 (fr) * 1998-09-10 2000-03-23 Rohm Co., Ltd. Del a semi-conducteur et son procede de fabrication
JP2001044500A (ja) * 1999-07-26 2001-02-16 Agency Of Ind Science & Technol Ａ面サファイア基板を用いたＺｎＯ系化合物半導体発光素子およびその製法
JP2001044499A (ja) * 1999-07-26 2001-02-16 Agency Of Ind Science & Technol シリコン基板を用いたＺｎＯ系化合物半導体発光素子およびその製法

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Title
See also references of EP1349217A4 *

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1391941A4 (en) * 2001-04-27 2007-06-27 Shinetsu Handotai Kk METHOD FOR PRODUCING LUMINESCENT ELEMENT
EP1901358A1 (en) * 2001-04-27 2008-03-19 Shin-Etsu Handotai Company Limited Method of fabricating light emitting device

Also Published As

Publication number Publication date
EP1349217A1 (en) 2003-10-01
JP4431925B2 (ja) 2010-03-17
US20040051109A1 (en) 2004-03-18
CN1478306A (zh) 2004-02-25
JP2002170993A (ja) 2002-06-14
TW515115B (en) 2002-12-21
CN1264229C (zh) 2006-07-12
KR20030059235A (ko) 2003-07-07
EP1349217A4 (en) 2006-07-26

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