Classifications

• • C—CHEMISTRY; METALLURGY
  • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
  • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
  • C09K13/00—Etching, surface-brightening or pickling compositions
  • C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
  • C09K13/06—Etching, surface-brightening or pickling compositions containing an inorganic acid with organic material
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
  • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
  • H01L31/1884—Manufacture of transparent electrodes, e.g. TCO, ITO
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
  • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
  • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
  • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
  • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
  • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
  • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
  • H01L21/321—After treatment
  • H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
  • H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
  • H01L21/32134—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by liquid etching only
• • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
  • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
  • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
  • Y02E10/00—Energy generation through renewable energy sources
  • Y02E10/50—Photovoltaic [PV] energy

Definitions

• the present invention relates to an etchant composition used for wet etching of a transparent conductive film such as ITO (indium tin oxide) used as a pixel electrode in a liquid crystal display or the like.
• a transparent conductive film such as ITO (indium tin oxide) used as a pixel electrode in a liquid crystal display or the like.
• Transparent conductive films such as ITO films have been widely used in the field of electronic devices such as antistatic films, heat reflective films, photoelectric conversion elements, and transparent electrodes for various flat panel displays.
• LCDs liquid crystal displays
• a transparent conductive film such as an ITO film is used as a display electrode of a pixel and is formed by etching using photolithography.
• polycrystalline ITO has been used, but as the size of the substrate increases, it becomes more difficult to achieve uniform polycrystalline ITO. ing.
• a photoresist is coated on a transparent conductive film, and after exposure and development, the photoresist remaining after etching is etched using an etching agent using the photoresist as a mask. It is formed by peeling.
• Aqueous / hydrochloric acid aqueous solution, iodic acid aqueous solution, phosphoric acid aqueous solution, hydrochloric acid / nitric acid aqueous solution (aqua regia) have been used.
• the wet etching agent such as ITO causes corrosion to A1 and the like during patterning, and selective etching proceeds from the grain boundaries, so that it is difficult to perform patterning with high processing accuracy.
• the present invention provides a transparent conductive film characterized by being an aqueous solution containing oxalic acid, polyoxyethylene alkyl ether sulfate and z or polyoxyethylene alkyl ether sulfate. (4) It relates to an etchant composition.
• FIG. 1 shows that an insulating film, SiN, is formed on a glass substrate, amorphous ITO is formed, a resist is applied on the amorphous ITO, and the substrate is developed.
• FIG. 2 is a cross-sectional view.
• FIG. 2 is a state diagram after the substrate of FIG. 1 has been etched with the etching agent described in Comparative Example 1 and the resist has been stripped with a basic resist stripping solution.
• BEST MODE FOR CARRYING OUT THE INVENTION The concentration of oxalic acid used in the present invention ranges from 0.01% to 10% by weight. When the concentration is 0.01% by weight or less, the etching rate is low. When the concentration is 10% by weight or more, the etching rate does not improve. Not a good idea.
• polyoxyethylene alkyl ether sulfate used in the present invention is represented by the general formula [I]:
• R represents an alkyl group having 6 to 22 carbon atoms
• n represents an integer of 1 to 50 °
• M represents an ammonia, an organic amine, a quaternary ammonium or an alkali metal.
• Emar 20C Kao
• Hytenol 325D Hytenol 325D (Daiichi Kogyo Pharmaceutical)
• Alscope AP-30 Alscope LE-240 (Toho Chemical)
• Sannole 605N Lion And the like are preferably used.
• concentration of the above polyoxyethylene alkyl ether sulfate or polyoxyethylene alkyl phenyl ether sulfate is less than 0.0001% by weight, a residue at the time of etching is generated. This is not preferable because the etching rate of the transparent conductive film decreases.
• the use concentration of the present invention is from normal temperature to 90 ° C., and the use time is about 1 to 30 minutes. Further, the present invention is suitably used for wet etching such as IZO (indium monooxide, oxide) in addition to amorphous ITO.
• IZO indium monooxide, oxide
• FIG. 1 shows that an insulating film, SiN (2), is formed on a glass substrate (1), an amorphous ITO (3) is formed, and a resist is applied on the amorphous ITO.
• FIG. 4 is a cross-sectional view of the substrate after application and development. Using the substrate shown in FIG.
• Example 1 The substrate used in Example 1 was etched at 40 ° C. for 2 minutes using an etching agent which is an aqueous solution containing 3.4% by weight of oxalic acid, washed with water, and dried. After the resist was stripped off with a basic resist stripping solution, it was washed with water. As a result of SEM observation, the amorphous ITO had been etched, but as shown in FIG. 2, many residues (5) were observed. .
• an etching agent which is an aqueous solution containing 3.4% by weight of oxalic acid
• Oxalic acid 3.4 weight 0 /. , 0.1 weight 0/0 of polyoxyethylene alkylphenyl ether sulfate (trade name: Hitenol N-12, manufactured by Dai-ichi Kogyo Seiyaku Co.) using an etching agent is an aqueous solution containing, used in Example 1
• the substrate thus obtained was subjected to etching at 40 ° C. for 2 minutes, washed with water, further stripped of the resist with a basic resist stripper, washed with water, and dried.
• the amorphous ITO was etched well and the remaining No residue was observed at all.
• etchant is an aqueous solution containing
• the substrate used in Example 1 was subjected to etching at 40 ° C. for 2 minutes, washed with water, and then, after the resist was stripped with a basic resist stripping solution, washed with water and dried.
• the amorphous ITO was etched well and no residue was observed.
• Example 1 Oxalate 1.0 wt 0/0, 0.1 weight 0/0 of polyoxyethylene alkylphenyl ether sulfate (trade name: Hitenol N-12, manufactured by Dai-ichi Kogyo Seiyaku Co.) which is an aqueous solution containing etching
• the substrate used in Example 1 was etched at 40 ° C. for 2 minutes, washed with water, and further, the resist was peeled off with a basic resist stripper, washed with water, and dried.
• the amorphous ITO was favorably etched, and no residue was observed.

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• Engineering & Computer Science (AREA)
• Chemical & Material Sciences (AREA)
• Manufacturing & Machinery (AREA)
• Physics & Mathematics (AREA)
• Condensed Matter Physics & Semiconductors (AREA)
• General Physics & Mathematics (AREA)
• Computer Hardware Design (AREA)
• Microelectronics & Electronic Packaging (AREA)
• Power Engineering (AREA)
• Electromagnetism (AREA)
• Chemical Kinetics & Catalysis (AREA)
• General Chemical & Material Sciences (AREA)
• Inorganic Chemistry (AREA)
• Materials Engineering (AREA)
• Organic Chemistry (AREA)
• Weting (AREA)
• Photosensitive Polymer And Photoresist Processing (AREA)

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Citations (3)

• 2001
  • 2001-11-21 JP JP2002547213A patent/JP4122971B2/ja not_active Expired - Fee Related
  • 2001-11-21 KR KR1020027009580A patent/KR100761602B1/ko active IP Right Grant
  • 2001-11-21 WO PCT/JP2001/010161 patent/WO2002045144A1/ja active Application Filing
  • 2001-11-21 CN CNB018042937A patent/CN1214449C/zh not_active Expired - Lifetime
  • 2001-11-27 TW TW090129288A patent/TW529098B/zh not_active IP Right Cessation

Patent Citations (3)

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