WO2002043923A1 - Cleaning device for cleaning polishing cloths used for polishing semiconductor wafers - Google Patents

Cleaning device for cleaning polishing cloths used for polishing semiconductor wafers Download PDF

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Publication number
WO2002043923A1
WO2002043923A1 PCT/DE2001/004082 DE0104082W WO0243923A1 WO 2002043923 A1 WO2002043923 A1 WO 2002043923A1 DE 0104082 W DE0104082 W DE 0104082W WO 0243923 A1 WO0243923 A1 WO 0243923A1
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WO
WIPO (PCT)
Prior art keywords
polishing pad
cleaning
polishing
grinding wheel
cleaning device
Prior art date
Application number
PCT/DE2001/004082
Other languages
German (de)
French (fr)
Inventor
Veit Götze
Rüdiger Hunger
Original Assignee
Infineon Technologies Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Infineon Technologies Ag filed Critical Infineon Technologies Ag
Priority to KR10-2003-7007198A priority Critical patent/KR20040004453A/en
Priority to JP2002545886A priority patent/JP2004514300A/en
Priority to DE10195157T priority patent/DE10195157B4/en
Publication of WO2002043923A1 publication Critical patent/WO2002043923A1/en
Priority to US10/447,387 priority patent/US20030216112A1/en

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Classifications

    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B53/00Devices or means for dressing or conditioning abrasive surfaces
    • B24B53/017Devices or means for dressing, cleaning or otherwise conditioning lapping tools
    • B08B1/32
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B08CLEANING
    • B08BCLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B3/00Cleaning by methods involving the use or presence of liquid or steam
    • B08B3/02Cleaning by the force of jets or sprays
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B57/00Devices for feeding, applying, grading or recovering grinding, polishing or lapping agents
    • B24B57/02Devices for feeding, applying, grading or recovering grinding, polishing or lapping agents for feeding of fluid, sprayed, pulverised, or liquefied grinding, polishing or lapping agents

Definitions

  • the present invention relates to a cleaning device and a method carried out with the cleaning device for cleaning polishing pads, in particular polishing cloths, which are used for the chemical-mechanical polishing of semiconductor wafers in the course of a manufacturing process.
  • the material abrasion occurring in this polishing process is however deposited in the polishing pad. These / deposits can have a negative effect when polishing subsequent wafers, for example by scratches forming on the surface of these wafers.
  • German patent application DE 197 37 854 AI which is hereby included in the disclosure of the present application, a device for cleaning a polishing pad, for example a polishing cloth for polishing wafers.
  • This device is essentially formed by a distributor for delivering a gas-water mixture at a high pressure.
  • the gas-water mixture is atomized and sprayed onto the polishing pad to be cleaned via nozzles which are arranged on the outlet side of the distributor.
  • a blasting nozzle is provided for blasting a directed water jet onto the polishing pad to be cleaned.
  • the directed water jet also exits the blasting nozzle at high pressure.
  • this cleaning device allows thorough cleaning of the surface of the polishing pad.
  • the cleaning process is ineffective, since material particles stuck in the polishing pad in particular can only be removed with a relatively high consumption of the gas-water mixture.
  • the present invention is based on the essential idea that essentially two cleaning systems are used for cleaning the polishing pads, in which a first cleaning system carries out a preliminary or rough cleaning of the surface of the polishing pad, and a second cleaning system carries out a post-cleaning of the surface.
  • the first cleaning system essentially has a rotating grinding wheel, through which the surface of the polishing pad is ground.
  • the second cleaning system on the other hand, essentially consists of the distributor known per se in the prior art and described in the above-mentioned publication DE 197 37 854 A1 for dispensing a gas-water mixture onto the surface of the polishing pad.
  • a corresponding cleaning process of the surface of the polishing pad can be carried out in such a way that in a first cleaning step the entire surface of the polishing pad is first ground off and then in a second cleaning step the surface is exposed to the gas / water mixture under high pressure. If necessary, both cleaning steps can be carried out several times in succession in alternation.
  • both cleaning steps are carried out simultaneously, with different sections of the surface either being ground down or the gas / water mixture being applied, and the polishing pad being rotated about a main axis, so that essentially each the section of the surface is subjected to both cleaning steps at least once.
  • the cleaning device is preferably designed for this purpose so that the polishing pad to be cleaned can be positioned such that the surface to be cleaned of the polishing pad faces the grinding wheel and the exit side of the gas / water mixture from the distributor, and grinding wheel and distributor each on holding arms are attached such that they face different sections of the surface of the polishing pad, and the polishing pad is rotatably supported about a main axis.
  • At least one of the holding arms for the grinding wheel and the distributor can be arranged pivotably.
  • a spray nozzle for rinsing off grinding particles detached from the surface of the polishing pad by the grinding wheel can additionally be attached to the holding arm of the grinding wheel.
  • the cleaning device can additionally have a liquid nozzle through which a further section of the surface of the polishing pad can be acted upon by a liquid, in particular water.
  • a liquid in particular water
  • the cleaning device is preferably designed such that a circular polishing pad for a cleaning process on it preferably rotatably mounted support can be stored.
  • the grinding wheel, the distributor and optionally the liquid nozzle can then be arranged on different circumferential sections of the circular polishing pad.
  • the arrangement of these links and the rotational movement of the polishing pad are preferably such that the surface sections are subjected to a cleaning treatment by the grinding wheel, are then charged with the gas-water mixture and finally rinsed off by the directed water jet from the liquid nozzle.
  • Both the grinding wheel and the distributor can be attached to their respective holding arms in such a way that they can be moved along the holding arm.
  • the distributor for dispensing a gas-water mixture can be designed as it was described in the publication DE 197 37 854 AI already mentioned.
  • a gas supply line and a water supply line are arranged on the inlet side of the distributor.
  • the individual components of the gas-water mixture are fed into the distributor from various sources through the water and gas supply lines.
  • a plurality of nozzles is formed on an outlet side of the distributor, through which the gas-water mixture is discharged or atomized to the outside.
  • abrasion particles located on the polishing pad can thus be removed from the polishing pad in a thorough and effective manner at the same time.
  • the risk of contamination of wafers to be subsequently processed due to abrasion of previously polished wafers is greatly reduced.
  • FIG. 1 shows an exemplary embodiment of a cleaning device according to the invention in a schematic cross-sectional view
  • FIG. 2 shows a top view of the cleaning device according to FIG. 1.
  • FIG. 1 schematically shows an exemplary embodiment of a cleaning device according to the invention for cleaning a polishing cloth 12 arranged on a polishing table 11 in a cross section.
  • 2 shows a top view of the cleaning device, the individual cleaning elements being shown in their relative arrangement to one another and to the surface of the polishing cloth 12 to be cleaned.
  • the cleaning device essentially consists of a first cleaning system 5 for pre-cleaning the surface of the polishing pad 12 and a second cleaning system 2 for carrying out post-cleaning.
  • the first cleaning system 5 has a circular grinding wheel 50 which is set into a rotary movement during the cleaning process.
  • the grinding wheel 50 is fastened on a pivotable holding arm 51 and is displaceable along the holding arm 51 (see FIG. 2).
  • the holding arm 51 is pivoted in so that the grinding wheel 50 is positioned above the surface of the polishing pad 12, whereupon the grinding wheel 50 is placed on the polishing pad 12 with a defined pressure.
  • the grinding wheel 50 is a circular wheel, which is provided with a special rough diamond-coated surface and roughenes the surface of the polishing pad 12 due to its rotational movement.
  • TJ ⁇ ⁇ > TJ 1> N ⁇ - ji P. P. 0 ⁇ su O ⁇ - 0 o. rt ⁇ ⁇ ⁇ - 0 ⁇ ⁇ - Hl P. ⁇ ⁇ 0 rt ⁇ fu ⁇ - 0 rt CQ TJ ⁇ td ⁇ - a X a tr a a ⁇ li tr LQ CQ li a Hl ⁇ - a li ⁇ X H ⁇ >
  • cleaned section is passed due to the rotary movement under the radiation surface of the distributor 20, in which the second cleaning step takes place, whereupon the dissolved particles are subsequently rinsed off the surface of the polishing pad 12 by the water jet 30A of the jet nozzle 30.
  • the holding arm 25 of the second cleaning system can also be pivoted and is initially in a pivoted-out position.
  • the two cleaning steps can be carried out separately, in which case in a first cleaning step essentially the entire surface of the polishing pad 12 is ground down by the grinding wheel 50 attached to the pivoted-in holding arm 51.
  • the holding arm 51 of the first cleaning system can then be pivoted away and the holding arm 25 of the second cleaning system can be pivoted in, after which essentially the entire surface is subjected to a second cleaning step by applying the gas / water mixture from the distributor to the surface 20 is cleaned.

Abstract

A cleaning device for cleaning a polishing pad (12) has a first cleaning system (5) with an abrasive disk (50) and a second cleaning system (2) with a distributor device (20) for discharging a gas-water mixture at high pressure. The polishing pad (12) that is located on the polishing (11) can be caused to rotate, so that the surface sections to be cleaned are subjected first to pre-cleaning with the abrasive disk (50) and then, to a second cleaning with the gas-water mixture of the distributor device (20).

Description

Beschreibungdescription
Reinigungsvorrichtung zum Reinigen von für das Polieren von Halbleiterwafern verwendeten PoliertüchernCleaning device for cleaning polishing cloths used for polishing semiconductor wafers
Die vorliegende Erfindung betrifft eine Reinigungsvorrichtung und ein mit der Reinigungsvorrichtung durchgeführtes Verfahren zum Reinigen von Polierpads, insbesondere von Poliertüchern, welche für das chemisch-mechanische Polieren von Halb- leiterwafern im Verlaufe eines Herstellungsprozesses verwendet werden.The present invention relates to a cleaning device and a method carried out with the cleaning device for cleaning polishing pads, in particular polishing cloths, which are used for the chemical-mechanical polishing of semiconductor wafers in the course of a manufacturing process.
In der Halbleiterindustrie führt die Forderung nach immer kleineren Strukturen und steigender Ausbeute bei Halbleiter- waferϊi dazu, daß neben der Prozeßbeherrschung die Reduktion der Defektdichte auf den Wafern einen zunehmenden Einfluß gewinnt. Im Verlaufe eines Strukturierungs- und Bearbeitungsprozesses einer Halbleiteroberfläche kann vorgesehen sein, daß bestimmte Materialien durch ein Polierpad, beispielsweise ein Poliertuch durch chemisch-mechanisches Polieren oder dergleichen abgetragen werden. Bekannte Einrichtungen hierfür sind beispielsweise die sogenannte IPEC/ estech 472, welche eine Einrichtung speziell zum chemisch-mechanischen Polieren von Silizium- afern ist. Der mit dieser Einrichtung durchge- führte Polierprozeß ist ein Einzelscheibenprozeß, bei welchem die Produktseite des Wafers chemisch-mechanisch poliert wird. Der bei diesem Polierprozeß auftretende Materialabrieb wird jedoch in dem Polierpad abgelagert. Diese /Ablagerungen können sich beim Polieren nachfolgender Wafer negativ auswirken, beispielsweise indem sich auf der Oberfläche dieser Wafer Kratzer bilden. Das Problem stellt sich besonders bei Cu- Prozessen, da eine Kontamination eines nachfolgend polierten Siliziumwafers zum Ausfall von Bauelementen auf diesem Sili- ziumwafer führen kann.In the semiconductor industry, the demand for ever smaller structures and increasing yields in semiconductor wafers means that, in addition to process control, the reduction in defect density on the wafers is gaining increasing influence. In the course of a structuring and processing process of a semiconductor surface, it can be provided that certain materials are removed by means of a polishing pad, for example a polishing cloth, by chemical-mechanical polishing or the like. Known devices for this are, for example, the so-called IPEC / estech 472, which is a device specifically for the chemical-mechanical polishing of silicon fields. The polishing process carried out with this device is a single-wafer process in which the product side of the wafer is chemically and mechanically polished. The material abrasion occurring in this polishing process is however deposited in the polishing pad. These / deposits can have a negative effect when polishing subsequent wafers, for example by scratches forming on the surface of these wafers. The problem arises particularly in Cu processes, since contamination of a subsequently polished silicon wafer can lead to failure of components on this silicon wafer.
Um eine Kontamination nachfolgender Wafer durch Abrieb vorher polierter Wafer zu verringern und um die Belastung des Polierpads mit Abrieb zu begrenzen, wird das Polierpad bisher sehr oft ausgewechselt. Dies ist jedoch generell von Nachteil, da die dadurch verursachten Kosten und Umrüstzeiten die Leistungsfähigkeit des Polierprozesses in beträchtlicher Wei- se beeinflussen.In order to reduce contamination of subsequent wafers by abrasion of previously polished wafers and to reduce the load on the To limit polishing pads with abrasion, the polishing pad has been replaced very often so far. However, this is generally disadvantageous since the costs and changeover times caused thereby have a considerable influence on the performance of the polishing process.
Es ist daher bereits vorgeschlagen worden, die bei dem Polierprozeß verwendeten Polierpads anschließend von dem abgelagerten Materialabrieb sowie von Resten des beim chemisch- mechanischen Polieren verwendeten Slurry's zu reinigen. In der deutschen Patentanmeldung DE 197 37 854 AI, die hiermit in den Offenbarungsgehalt der vorliegenden Anmeldung aufgenommen wird, wird eine Vorrichtung zum Reinigen eines Polierpads, beispielsweise eines Poliertuchs für das Polieren von Wafern beschrieben. Diese Vorrichtung wird im wesentlichen durch einen Verteiler zur Abgabe eines Gas-Wasser-Gemischs • mit einem hohen Druck gebildet. Das Gas-Wasser-Gemisch wird zerstäubt und über Düsen, die an der Ausgangsseite des Verteilers angeordnet sind, auf das zu reinigende Polierpad ab- gesprüht. Weiterhin ist eine Abstrahldüse zum Abstrahlen eines gerichteten Wasserstrahls auf das zu reinigende Polierpad vorgesehen. Der gerichtete Wasserstrahl tritt ebenfalls mit einem hohen Druck aus der Abstrahldüse aus. Mit dieser Reinigungsvorrichtung ist zwar im Prinzip eine gründliche Reini- gung der Oberfläche des Polierpads möglich. Es hat sich jedoch gezeigt, daß der Reinigungsprozeß ineffektiv ist, da insbesondere in dem Polierpad festgesetzte Materialpartikel nur unter einem relativ hohen Verbrauch des Gas-Wasser- Gemischs entfernt werden können.It has therefore already been proposed to subsequently clean the polishing pads used in the polishing process from the deposited material abrasion and from residues of the slurry used in chemical mechanical polishing. In the German patent application DE 197 37 854 AI, which is hereby included in the disclosure of the present application, a device for cleaning a polishing pad, for example a polishing cloth for polishing wafers, is described. This device is essentially formed by a distributor for delivering a gas-water mixture at a high pressure. The gas-water mixture is atomized and sprayed onto the polishing pad to be cleaned via nozzles which are arranged on the outlet side of the distributor. Furthermore, a blasting nozzle is provided for blasting a directed water jet onto the polishing pad to be cleaned. The directed water jet also exits the blasting nozzle at high pressure. In principle, this cleaning device allows thorough cleaning of the surface of the polishing pad. However, it has been shown that the cleaning process is ineffective, since material particles stuck in the polishing pad in particular can only be removed with a relatively high consumption of the gas-water mixture.
Es ist daher Aufgabe der vorliegenden Erfindung, eine Reinigungsvorrichtung und ein entsprechendes Verfahren zur Reinigung von Polierpads, insbesondere Poliertüchern, anzugeben, durch welche eine ebenso gründliche wie effektive Reinigung der Oberfläche der Polierpads ermöglicht werden kann. Diese Aufgabe wird durch die Merkmale der unabhängigen Patentansprüche gelöst. Vorteilhafte Ausgestaltungen der Reinigungsvorrichtung und des Reinigungsverfahrens sind in den entsprechenden Unteransprüchen angegeben.It is therefore an object of the present invention to provide a cleaning device and a corresponding method for cleaning polishing pads, in particular polishing cloths, by means of which a thorough and effective cleaning of the surface of the polishing pads can be made possible. This object is solved by the features of the independent claims. Advantageous embodiments of the cleaning device and the cleaning method are specified in the corresponding subclaims.
Der vorliegenden Erfindung liegt der wesentliche Gedanke zugrunde, daß zum Reinigen der Polierpads im wesentlichen zwei Reinigungssysteme verwendet werden, bei welchen ein erstes Reinigungssystem eine Vor- oder Grobreinigung der Oberfläche des Polierpads vornimmt, und ein zweites Reinigungssystem eine Nachreinigung der Oberfläche vornimmt. Dabei weist das erste Reinigungssystem im wesentlichen eine rotierende Schleifscheibe auf, durch die die Oberfläche des Polierpads abgeschliffen wird. Das zweite Reinigungssystem besteht dagegen im wesentlichen aus dem an sich im Stand der Technik bekannten, und in der oben genannten Druckschrift DE 197 37 854 AI beschriebenen Verteiler zur Abgabe eines Gas-Wasser-Gemischs auf die Oberfläche des Polierpads.The present invention is based on the essential idea that essentially two cleaning systems are used for cleaning the polishing pads, in which a first cleaning system carries out a preliminary or rough cleaning of the surface of the polishing pad, and a second cleaning system carries out a post-cleaning of the surface. The first cleaning system essentially has a rotating grinding wheel, through which the surface of the polishing pad is ground. The second cleaning system, on the other hand, essentially consists of the distributor known per se in the prior art and described in the above-mentioned publication DE 197 37 854 A1 for dispensing a gas-water mixture onto the surface of the polishing pad.
Ein entsprechendes Reinigungsverfahren der Oberfläche des Polierpads kann so erfolgen, daß in einem ersten Reinigungsschritt zuerst die gesamte Oberfläche des Polierpads abgeschliffen wird, und anschließend in einem zweiten Reinigungsschritt die Oberfläche mit dem Gas-Wasser-Gemisch unter hohem Druck beaufschlagt wird. Gegebenenfalls können beide Reinigungsschritte mehrmals im Wechsel nacheinander durchgeführt werden.A corresponding cleaning process of the surface of the polishing pad can be carried out in such a way that in a first cleaning step the entire surface of the polishing pad is first ground off and then in a second cleaning step the surface is exposed to the gas / water mixture under high pressure. If necessary, both cleaning steps can be carried out several times in succession in alternation.
In einer vorteilhaften Ausführungsart des Reinigugsverfahrens werden jedoch beide Reinigungsschritte gleichzeitig ausgeführt, wobei gleichzeitig verschiedene Abschnitte der Oberfläche entweder abgeschliffen oder mit dem Gas-Wasser-Gemisch beaufschlagt werden, und das Polierpad in eine Drehbewegung um eine Hauptachse versetzt wird, so daß im wesentlichen je- der Abschnitt der Oberfläche mindestens einmal beiden Reinigungsschritten unterzogen wird. Die Reinigungsvorrichtung ist vorzugsweise zu diesem Zweck so ausgebildet, daß das zu reinigende Polierpad derart positionierbar ist, daß die zu reinigende Oberfläche des Polierpads der Schleifscheibe und der Austrittsseite des Gas- Wasser-Gemischs aus dem Verteiler zugewandt ist, und Schleifscheibe und Verteiler jeweils an Haltearmen derart befestigt sind, daß sie verschiedenen Abschnitten der Oberfläche des Polierpads gegenüber stehen, und das Polierpad um eine Hauptachse drehbar gelagert ist. Dabei kann mindestens ei- ner der Haltearme für die Schleifscheibe und den Verteiler verschwenkbar angeordnet sein. An dem Haltearm der Schleifscheibe kann zusätzlich eine Sprühdüse zum Abspülen von durch die Schleifscheibe aus der Oberfläche des Polierpads herausgelösten Schleifpartikeln befestigt sein.In an advantageous embodiment of the cleaning method, however, both cleaning steps are carried out simultaneously, with different sections of the surface either being ground down or the gas / water mixture being applied, and the polishing pad being rotated about a main axis, so that essentially each the section of the surface is subjected to both cleaning steps at least once. The cleaning device is preferably designed for this purpose so that the polishing pad to be cleaned can be positioned such that the surface to be cleaned of the polishing pad faces the grinding wheel and the exit side of the gas / water mixture from the distributor, and grinding wheel and distributor each on holding arms are attached such that they face different sections of the surface of the polishing pad, and the polishing pad is rotatably supported about a main axis. At least one of the holding arms for the grinding wheel and the distributor can be arranged pivotably. A spray nozzle for rinsing off grinding particles detached from the surface of the polishing pad by the grinding wheel can additionally be attached to the holding arm of the grinding wheel.
Die Reinigungsvorrichtung kann zusätzlich eine Flüssigkeitsdüse aufweisen, durch die ein weiterer Abschnitt der Oberfläche des Polierpads mit einer Flüssigkeit, insbesondere Wasser, beaufschlagbar ist. Dadurch kann die Oberfläche des Po- lierpads, insbesondere ein Oberflächenabschnitt, der kurz zuvor mit dem Gas-Wasser-Gemisch beaufschlagt worden war, mit einem gerichteten Wasserstrahl aus der Flüssigkeitsdüse abgespült werden.The cleaning device can additionally have a liquid nozzle through which a further section of the surface of the polishing pad can be acted upon by a liquid, in particular water. As a result, the surface of the polishing pad, in particular a surface section which had just been exposed to the gas / water mixture, can be rinsed out of the liquid nozzle with a directed water jet.
Da die für die chemisch-mechanischen Polierprozesse in der Halbleiter-Prozeßtechnik verwendeten Polierpads in vielen Fällen eine kreisrunde Form im wesentlichen in der Form des Halbleiterwafers aufweisen, ist die Reinigungsvorrichtung vorzugsweise so ausgelegt, daß in ihr ein kreisrunder Polier- pad für einen Reinigungsprozeß auf einer vorzugsweise drehbar gelagerten Unterlage gelagert werden kann. In diesem Fall können dann die Schleifscheibe, der Verteiler und gegebenenfalls die Flüssigkeitsdüse an verschiedenen Umfangsabschnit- ten des kreisrunden Polierpads angeordnet sein. Die Anordnung dieser Glieder und die Drehbewegung des Polierpads sind vorzugsweise derart, daß die Oberflächenabschnitte einer Reinigungsbehandlung durch die Schleifscheibe unterzogen werden, anschließend mit dem Gas-Wasser-Gemisch beaufschlagt werden und schließlich von dem gerichteten Wasserstrahl aus der Flüssigkeitsdüse abgespült werden.Since the polishing pads used for the chemical-mechanical polishing processes in semiconductor process technology in many cases have a circular shape essentially in the shape of the semiconductor wafer, the cleaning device is preferably designed such that a circular polishing pad for a cleaning process on it preferably rotatably mounted support can be stored. In this case, the grinding wheel, the distributor and optionally the liquid nozzle can then be arranged on different circumferential sections of the circular polishing pad. The arrangement of these links and the rotational movement of the polishing pad are preferably such that the surface sections are subjected to a cleaning treatment by the grinding wheel, are then charged with the gas-water mixture and finally rinsed off by the directed water jet from the liquid nozzle.
Sowohl Schleifscheibe als auch Verteiler können an ihren jeweiligen Haltearmen derart befestigt sein, daß sie entlang dem Haltearm verschiebbar sind.Both the grinding wheel and the distributor can be attached to their respective holding arms in such a way that they can be moved along the holding arm.
Der Verteiler zur Abgabe eines Gas-Wasser-Gemischs kann so ausgeführt sein, wie er in der bereits genannten Druckschrift DE 197 37 854 AI beschrieben wurde. Der Gesamtinhalt dieser Druckschrift, insbesondere jedoch die Abschnitte, die sich auf den Aufbau des Verteilers für das Gas-Wasser-Gemisch und die Bereitstellung des Gas-Wasser-Gemischs in dem Verteiler beziehen, werden hiermit in den Offenbarungsgehalt der vorliegenden Anmeldung einbezogen. Insbesondere ist an der Eingangsseite des Verteilers eine Gaszuleitung und eine Wasserzuleitung angeordnet. Durch die Wasser- und die Gaszuleitung werden die einzelnen Komponenten des Gas-Wasser-Gemischs aus verschiedenen Quellen in den Verteiler eingespeist. An einer Ausgangsseite des Verteilers ist eine Vielzahl von Düsen ausgebildet, durch die das Gas-Wasser-Gemisch nach außen abgegeben, bzw. zerstäubt wird.The distributor for dispensing a gas-water mixture can be designed as it was described in the publication DE 197 37 854 AI already mentioned. The entire content of this document, but in particular the sections relating to the structure of the distributor for the gas-water mixture and the provision of the gas-water mixture in the distributor, are hereby incorporated into the disclosure content of the present application. In particular, a gas supply line and a water supply line are arranged on the inlet side of the distributor. The individual components of the gas-water mixture are fed into the distributor from various sources through the water and gas supply lines. A plurality of nozzles is formed on an outlet side of the distributor, through which the gas-water mixture is discharged or atomized to the outside.
Durch die erfindungsgemäße Reinigungsvorrichtung und das entsprechende Reinigungsverfahren können auf dem Polierpad befindliche Abriebspartikel somit auf gleichzeitig gründliche und effektive Weise von dem Polierpad entfernt werden. Gleichzeitig wird die Gefahr einer Kontamination nachfolgend zu bearbeitender Wafer durch Abrieb zuvor polierter Wafer stark reduziert. Dadurch daß zunächst bei jedem zu reinigenden Oberflächenabschnitt eine Vorreinigung mittels Abschleifen durch die Schleifscheibe durchgeführt wird und erst anschließend eine Nachreinigung mittels des Verteilers erfolgt, kann der gesamte Reinigungsprozeß sehr effizient ausgeführt werden und der Verbrauch des Gas-Wasser-Gemischs für den Verteiler kann reduziert werden. Im folgenden wird ein einziges Ausführungsbeispiel der erfindungsgemäßen Reinigungsvorrichtung anhand der Zeichnungsfigu- ren näher erläutert. Es zeigen:By means of the cleaning device according to the invention and the corresponding cleaning method, abrasion particles located on the polishing pad can thus be removed from the polishing pad in a thorough and effective manner at the same time. At the same time, the risk of contamination of wafers to be subsequently processed due to abrasion of previously polished wafers is greatly reduced. By first performing a pre-cleaning by grinding through the grinding wheel for each surface section to be cleaned and only then performing subsequent cleaning by means of the distributor, the entire cleaning process can be carried out very efficiently and the consumption of the gas-water mixture for the distributor can be reduced , A single exemplary embodiment of the cleaning device according to the invention is explained in more detail below with reference to the drawing figures. Show it:
Fig. 1 ein Ausführungsbeispiel für eine erfindungsgemäße Reinigungsvorrichtung in einer schematischen Quer- schnittsansicht;1 shows an exemplary embodiment of a cleaning device according to the invention in a schematic cross-sectional view;
Fig. 2 eine Draufsicht auf die Reinigungsvorrichtung gemäß Fig. 1.FIG. 2 shows a top view of the cleaning device according to FIG. 1.
In der Fig. 1 ist ein Ausführungsbeispiel für eine erfindungsgemäße Reinigungsvorrichtung zum Reinigen eines auf einem Poliertisch 11 angeordneten Poliertuchs 12 schematisch in einem Querschnitt dargestellt. Fig. 2 zeigt die Reinigungsvorrichtung in einer Draufsicht, wobei die einzelnen Reinigungselemente in ihrer relativen Anordnung zueinander und zu der Oberfläche des zu reinigenden Poliertuchs 12 dargestellt sind.1 schematically shows an exemplary embodiment of a cleaning device according to the invention for cleaning a polishing cloth 12 arranged on a polishing table 11 in a cross section. 2 shows a top view of the cleaning device, the individual cleaning elements being shown in their relative arrangement to one another and to the surface of the polishing cloth 12 to be cleaned.
Die Reinigungsvorrichtung besteht im wesentlichen aus einem ersten Reinigungssystem 5 für eine Vorreinigung der Oberfläche des Polierpads 12 und einem zweiten Reinigungssystem 2 für die Durchführung einer Nachreinigung. Das erste Reini- gungssystem 5 weist eine kreisförmige Schleifscheibe 50 auf, die während des Reinigungsvorgangs in eine Drehbewegung versetzt wird. Die Schleifscheibe 50 ist auf einem schwenkbaren Haltearm 51 befestigt und ist entlang des Haltearms 51 verschiebbar (s. Fig. 2) . Zu Beginn eines Reinigungsvorgangs mit dem ersten Reinigungssystem 5 wird der Haltearm 51 eingeschwenkt, so daß die Schleifscheibe 50 oberhalb der Oberfläche des Polierpads 12 positioniert ist, worauf die Schleifscheibe 50 mit einem definierten Druck auf das Polierpad 12 aufgesetzt wird. Die Schleifscheibe 50 ist eine kreisrunde Scheibe, die mit einer speziellen rauhen diamantbeschichteten Oberfläche versehen ist und durch ihre Drehbewegung die Oberfläche des Polierpads 12 aufrauht. Zusätzlich ist an dem Hai-
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The cleaning device essentially consists of a first cleaning system 5 for pre-cleaning the surface of the polishing pad 12 and a second cleaning system 2 for carrying out post-cleaning. The first cleaning system 5 has a circular grinding wheel 50 which is set into a rotary movement during the cleaning process. The grinding wheel 50 is fastened on a pivotable holding arm 51 and is displaceable along the holding arm 51 (see FIG. 2). At the beginning of a cleaning process with the first cleaning system 5, the holding arm 51 is pivoted in so that the grinding wheel 50 is positioned above the surface of the polishing pad 12, whereupon the grinding wheel 50 is placed on the polishing pad 12 with a defined pressure. The grinding wheel 50 is a circular wheel, which is provided with a special rough diamond-coated surface and roughenes the surface of the polishing pad 12 due to its rotational movement. In addition, the shark
Figure imgf000009_0001
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5 μ, $u= - tr μ- TJ Hl cd LQ φ li Hi i rt rt X X Si a tr CQ P. X P. i Φ Ω μ. 0 to a φ rt 1 0 φ Φ Φ CQ Su CD 0 0 φ CD Φ LQ N rt φ Φ J Φ 05 μ, $ u = - tr μ- TJ Hl cd LQ φ li Hi i rt rt X X Si a tr CQ P. X P. i Φ Ω μ. 0 to a φ rt 1 0 φ Φ Φ CQ Su CD 0 0 φ CD Φ LQ N rt φ Φ J Φ 0
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Hi μ- φ Φ μ- LQ tr tr td a rt a Q Si CQ rt μ- ü & M li Φ rt a a X fu *—* φ ΩHi μ- φ Φ μ- LQ tr tr td a rt a Q Si CQ rt μ- ü & M li Φ rt a a X fu * - * φ Ω
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Ω φ ö XΩ φ ö X
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LQ Ω Φ φ Φ 0 LQ CQ tr tr CQ rt φ Hl 3 0' SU LQ CDLQ Ω Φ φ Φ 0 LQ CQ tr tr CQ rt φ Hl 3 0 'SU LQ CD
LΠ 0 0 tr ii a 1 μ- CD μ- Φ TJ μ μ- H SU w LQ rt a a φ H1 φ CQ XLΠ 0 0 tr ii a 1 μ- CD μ- Φ TJ μ μ- H SU w LQ rt aa φ H 1 φ CQ X
H Ω CD φ φ O o a ti 1 < φ 1 <! ü μ- 0 tr X 1 j LQ Φ Φ I Φ 1 toH Ω CD φ φ O oa ti 1 <φ 1 <! ü μ- 0 tr X 1 j LQ Φ Φ I Φ 1 to
P. LQ o to 1 φ SU 1 su Φ φ I a μ- μj P. LQ o to 1 φ SU 1 su Φ φ I a μ- μ j
1 ti o 1 rt D 1 a1 ti o 1 rt D 1 a
CD CD
gereinigter Abschnitt wird durch die Drehbewegung bedingt unter der Abstrahlfläche des Verteilers 20 hindurchgeführt, bei der der zweite Reinigungsschritt erfolgt, worauf anschließend die gelösten Partikel durch den Wasserstrahl 30A der Ab- Strahldüse 30 von der Oberfläche des Polierpads 12 gespült werden.cleaned section is passed due to the rotary movement under the radiation surface of the distributor 20, in which the second cleaning step takes place, whereupon the dissolved particles are subsequently rinsed off the surface of the polishing pad 12 by the water jet 30A of the jet nozzle 30.
In einer alternativen Ausführungsform kann auch vorgesehen sein, daß der Haltearm 25 des zweiten Reinigungssytems eben- falls schwenkbar ist und anfänglich in einer ausgeschwenkten Position ist . Die beiden Reinigungsschritte können separat durchgeführt werden, wobei zuerst in einem ersten Reinigungs- schritt im wesentlichen die gesamte Oberfläche des Polierpads 12 durch die an dem eingeschwenkten Haltearm 51 befestigte Schleifscheibe 50 abgeschliffen wird. Nach Durchführen des ersten Reinigungsschritts kann dann der Haltearm 51 des ersten Reinigungssytems weggeschwenkt und der Haltearm 25 des zweiten Reinigungssytems eingeschwenkt werden, worauf anschließend im wesentlichen die gesamte Oberfläche einem zwei- ten Reinigungsschritt durch Beaufschlagen der Oberfläche mit dem Gas-Wasser-Gemisch aus dem Verteiler 20 gereinigt wird. In an alternative embodiment it can also be provided that the holding arm 25 of the second cleaning system can also be pivoted and is initially in a pivoted-out position. The two cleaning steps can be carried out separately, in which case in a first cleaning step essentially the entire surface of the polishing pad 12 is ground down by the grinding wheel 50 attached to the pivoted-in holding arm 51. After the first cleaning step has been carried out, the holding arm 51 of the first cleaning system can then be pivoted away and the holding arm 25 of the second cleaning system can be pivoted in, after which essentially the entire surface is subjected to a second cleaning step by applying the gas / water mixture from the distributor to the surface 20 is cleaned.

Claims

Patentansprüche claims
1. Reinigungsvorrichtung zum Reinigen eines Polierpads (12) , insbesondere eines Poliertuchs, mit einem ersten Reinigungssystem (5) , welches eine Schleifscheibe (50) aufweist, und einem zweiten Reinigungssystem (2) , welches einen Verteiler (20) zur Abgabe eines Gas-Wasser-Gemischs unter hohem Druck aufweist.1. Cleaning device for cleaning a polishing pad (12), in particular a polishing cloth, with a first cleaning system (5), which has a grinding wheel (50), and a second cleaning system (2), which has a distributor (20) for dispensing a gas Has water mixture under high pressure.
2. Reinigungsvorrichtung nach Anspruch 1, dadurch ge kennz e i chne t , daß das Polierpad (12) derart positionierbar ist, daß die zu reinigende Oberfläche des Polierpads (12) der Schleifscheibe (50) und der Austrittsseite (22) des Verteilers (20) zugewandt ist, und2. Cleaning device according to claim 1, characterized ge ez chne t that the polishing pad (12) can be positioned such that the surface to be cleaned of the polishing pad (12) of the grinding wheel (50) and the outlet side (22) of the distributor (20) is facing, and
Schleifscheibe (50) und Verteiler (20) jeweils an Haltearmen (51, 25) derart befestigt sind, daß sie verschiedenen Abschnitten der Oberfläche des Polierpads (12) gegenüberste- hen, und das Polierpad (12) um eine Hauptachse drehbar gelagert ist .The grinding wheel (50) and distributor (20) are each fastened to holding arms (51, 25) in such a way that they face different sections of the surface of the polishing pad (12) and the polishing pad (12) is rotatably mounted about a main axis.
3. Reinigungsvorrichtung nach Anspruch 2 , dadurch gekennzeichnet , daß mindestens einer der Haltearme (25, 51) verschwenkbar ist.3. Cleaning device according to claim 2, characterized in that at least one of the holding arms (25, 51) is pivotable.
4. Reinigungsvorrichtung nach Anspruch 2 oder 3, dadurch ge kenn z e i chne t , daß an dem Haltearm (51) der Schleifscheibe (50) eine Sprühdüse (52) zum Abspülen von durch die Schleifscheibe (50) aus der Oberfläche des Polierpads (12) herausgelösten Schleifpar- tikel befestigt ist.4. Cleaning device according to claim 2 or 3, characterized ge zei chne t that on the holding arm (51) of the grinding wheel (50) has a spray nozzle (52) for rinsing through the grinding wheel (50) from the surface of the polishing pad (12) loosened abrasive particles is attached.
5. Reinigungsvorrichtung nach einem der Ansprüche 2 bis 4, dadurch gekennzeichnet , daß eine Flüssigkeitsdüse (30) derart angeordnet ist, daß durch sie ein weiterer Abschnitt der Oberfläche des Polierpads (12) mit einer Flüssigkeit, insbesondere Wasser, beaufschlagbar ist .5. Cleaning device according to one of claims 2 to 4, characterized in that a liquid nozzle (30) is arranged such that a further section of the surface of the polishing pad (12) can be acted upon by a liquid, in particular water.
6. Reinigungsvorrichtung nach einem der vorhergehenden Ansprüche, dadurch gekennzeichnet , daß6. Cleaning device according to one of the preceding claims, characterized in that
- sie für die Aufnahme eines im wesentlichen kreisrunden Po- lierpads (12) ausgelegt ist, und die Schleifscheibe (50) , der Verteiler (20) und gegebenenfalls die Flüssigkeitsdüse (30) an verschiedenen Umfangs- abschnitten des Polierpads (12) angeordnet sind.- It is designed for receiving an essentially circular polishing pad (12), and the grinding wheel (50), the distributor (20) and optionally the liquid nozzle (30) are arranged on different peripheral sections of the polishing pad (12).
7. Verfahren zum Reinigen eines Polierpads (12), insbesondere eines Poliertuchs, insbesondere unter Verwendung einer Vorrichtung nach einem der Ansprüche 1 bis 6, dadurch gekennzeichnet , daß7. A method for cleaning a polishing pad (12), in particular a polishing cloth, in particular using a device according to one of claims 1 to 6, characterized in that
- die Oberfläche des Polierpads (12) entweder zeitgleich oder im Wechsel abgeschliffen und mit einem Gas-Wasser-Gemisch unter hohem Druck beaufschlagt wird.- The surface of the polishing pad (12) is sanded either simultaneously or alternately and a gas-water mixture is applied under high pressure.
8. Verfahren nach Anspruch 7, da du r c h g e k e nn z e i c hne t , d a ß - gleichzeitig verschiedene Abschnitte der Oberfläche entweder abgeschliffen oder mit dem Gas-Wasser-Gemisch beaufschlagt werden, und8. The method according to claim 7, since you do not have, d a ß - at the same time, different sections of the surface are either ground off or the gas / water mixture is applied, and
- das Polierpad (12) in eine Drehbewegung um eine Hauptachse versetzt wird, so daß im wesentlichen jeder Abschnitt der Oberfläche mindestens einmal beiden Reinigungsschritten unterzogen wird.- The polishing pad (12) is rotated about a main axis so that essentially each section of the surface is subjected to both cleaning steps at least once.
9. Verfahren nach Anspruch 7, da du r c h g e k e nn z e i c hn e t , d a ß - zuerst die gesamte Oberfläche des Polierpads (12) abgeschliffen und anschließend mit dem Gas-Wasser-Gemisch beauf- schlagt wird, wobei beide Reinigungsschritte gegebenenfalls mehrmals im Wechsel nacheinander durchgeführt werden.9. The method of claim 7, since you rchgeke nn zeic hn et, ß - first the entire surface of the polishing pad (12) ground and then applied with the gas-water mixture is struck, the two cleaning steps optionally being carried out several times in succession in alternation.
10. Verfahren nach einem der Ansprüche 7 bis 9, dadurch gekennzeichnet , daß - die Oberfläche des Polierpads (12) , insbesondere ein Ober- flächenabschnitt, der kurz zuvor mit dem Gas-Wasser-Gemisch beaufschlagt worden war, mit einem gerichteten Wasserstrahl (30A) abgespült wird. 10. The method according to any one of claims 7 to 9, characterized in that - the surface of the polishing pad (12), in particular a surface section, which had previously been exposed to the gas-water mixture, with a directed water jet (30A ) is rinsed off.
PCT/DE2001/004082 2000-11-29 2001-10-25 Cleaning device for cleaning polishing cloths used for polishing semiconductor wafers WO2002043923A1 (en)

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KR10-2003-7007198A KR20040004453A (en) 2000-11-29 2001-10-25 Cleaning device for cleaning polishing cloths used for polishing semiconductor wafers
JP2002545886A JP2004514300A (en) 2000-11-29 2001-10-25 Cleaning apparatus for cleaning a polishing cloth used for polishing a semiconductor wafer
DE10195157T DE10195157B4 (en) 2000-11-29 2001-10-25 Cleaning device for cleaning polishing cloths used for polishing semiconductor wafers
US10/447,387 US20030216112A1 (en) 2000-11-29 2003-05-29 Cleaning device and method for cleaning polishing cloths used for polishing semiconductor wafers

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DE10059180 2000-11-29

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US20030216112A1 (en) 2003-11-20

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