JP2004514300A - Cleaning apparatus for cleaning a polishing cloth used for polishing a semiconductor wafer - Google Patents
Cleaning apparatus for cleaning a polishing cloth used for polishing a semiconductor wafer Download PDFInfo
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- JP2004514300A JP2004514300A JP2002545886A JP2002545886A JP2004514300A JP 2004514300 A JP2004514300 A JP 2004514300A JP 2002545886 A JP2002545886 A JP 2002545886A JP 2002545886 A JP2002545886 A JP 2002545886A JP 2004514300 A JP2004514300 A JP 2004514300A
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- Prior art keywords
- polishing pad
- cleaning
- polishing
- gas
- water
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 238000005498 polishing Methods 0.000 title claims abstract description 90
- 238000004140 cleaning Methods 0.000 title claims abstract description 86
- 239000004744 fabric Substances 0.000 title claims description 7
- 239000004065 semiconductor Substances 0.000 title description 7
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 52
- 239000000203 mixture Substances 0.000 claims abstract description 25
- 238000000034 method Methods 0.000 claims description 20
- 239000007921 spray Substances 0.000 claims description 15
- 239000007788 liquid Substances 0.000 claims description 10
- 239000002245 particle Substances 0.000 claims description 8
- 238000005406 washing Methods 0.000 claims description 3
- 230000002093 peripheral effect Effects 0.000 claims description 2
- 230000002441 reversible effect Effects 0.000 claims description 2
- 235000012431 wafers Nutrition 0.000 description 16
- 239000007789 gas Substances 0.000 description 14
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 8
- 239000000126 substance Substances 0.000 description 6
- 238000007517 polishing process Methods 0.000 description 5
- 238000002347 injection Methods 0.000 description 4
- 239000007924 injection Substances 0.000 description 4
- 229910052757 nitrogen Inorganic materials 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 238000005507 spraying Methods 0.000 description 3
- 238000005299 abrasion Methods 0.000 description 2
- 238000011109 contamination Methods 0.000 description 2
- 239000008367 deionised water Substances 0.000 description 2
- 229910021641 deionized water Inorganic materials 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- 230000001154 acute effect Effects 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 238000004886 process control Methods 0.000 description 1
- 238000007788 roughening Methods 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B53/00—Devices or means for dressing or conditioning abrasive surfaces
- B24B53/017—Devices or means for dressing, cleaning or otherwise conditioning lapping tools
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B1/00—Cleaning by methods involving the use of tools
- B08B1/30—Cleaning by methods involving the use of tools by movement of cleaning members over a surface
- B08B1/32—Cleaning by methods involving the use of tools by movement of cleaning members over a surface using rotary cleaning members
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/02—Cleaning by the force of jets or sprays
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B57/00—Devices for feeding, applying, grading or recovering grinding, polishing or lapping agents
- B24B57/02—Devices for feeding, applying, grading or recovering grinding, polishing or lapping agents for feeding of fluid, sprayed, pulverised, or liquefied grinding, polishing or lapping agents
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Grinding-Machine Dressing And Accessory Apparatuses (AREA)
Abstract
研磨パッド（１２）を洗浄するための洗浄装置は、研削盤（５０）を備えた第１洗浄システム（５）と、ガス水混合物を高圧で噴射するための散水装置（２０）を備えた第２洗浄システム（２）とを備えている。また、研磨台（１１）に配置された研磨パッド（１２）は回転運動可能である。この結果、洗浄される表面部は、初めに、研削盤（５０）によって前洗浄され、続いて、散水装置（２０）のガス水混合物によって第２洗浄される。A cleaning device for cleaning the polishing pad (12) includes a first cleaning system (5) having a grinder (50) and a watering device (20) having a high-pressure jet of a gas-water mixture. 2 cleaning system (2). Further, the polishing pad (12) arranged on the polishing table (11) can rotate. As a result, the surface to be cleaned is first pre-cleaned by the grinding machine (50) and subsequently by a second cleaning by the gas-water mixture of the sprinkler (20).
Description
本発明は、製造プロセスの過程で、研磨パッド、特に半導体ウェハの化学的機械研磨に使用される研磨布の洗浄装置、および、それを用いて行われる洗浄方法に関するものである。
【０００１】
半導体産業では、より小型で高性能な半導体ウェハの要求から、プロセス制御に加えて、ウェハの欠陥度を低減することが重要視されている。半導体表面のパターン化プロセスおよび処理プロセスの過程で、研磨パッド（例えば研磨布）を用いて、化学的機械研磨またはそれと同様のことを行って、特定の物質を除去できる。これに関して、公知の装置として、例えばいわゆるＩＰＥＣ／Ｗｅｓｔｅｃｈ ４７２が挙げられる。この装置は、特にシリコンウェハの化学的機械研磨に用いられる。これによって行われる研磨プロセスは、ウェハの製品側面が化学的機械研磨されるという単一のウェハプロセスである。しかし、この研磨プロセスの際に発生する物質の磨耗は、研磨パッドに堆積する。この堆積物は、例えばこれらのウェハ表面を傷つけるので、次のウェハを研磨する際に悪影響を及ぼしかねない。この問題は、特に、Ｃｕプロセスを用いる場合に発生する。なぜなら、次に研磨されるシリコンウェハが汚れることによって、このシリコンウェハ上の構成素子が破損されてしまうからである。
【０００２】
すでに研磨されたウェハの磨耗によって次のウェハが汚れてしまうことを軽減し、磨耗による研磨パッドの負荷を軽減するために、通常、研磨パッドを非常に頻繁に交換する。しかし、それに起因するコストおよび切換時間が、研磨プロセスの性能に少なからず影響を及ぼすので、一般的に、研磨パッドの交換は都合が悪い。
【０００３】
したがって、研磨プロセスに用いられた研磨パッドに関して、堆積される磨耗した物質と、化学的機械研磨に用いられるスラリーの残留物とを洗浄することが提案されている。ドイツ特許出願ＤＥ １９７ ３７ ８５４ Ａ１（本出願の開示内容に記載する）では、ウェハを研磨するための研磨パッド、例えば研磨布の洗浄装置が開示されている。この装置は、主に、ガス水混合物を高圧で噴出するための散水装置によって構成されている。ガス水混合物は、噴霧され、散水装置の出射側に配置されたノズルを介して、洗浄される研磨パッド上に吹き付けられる。さらに、噴射水を、的を絞って噴射するための噴射ノズルが、洗浄される研磨パッド上に備えられている。この的を絞った噴射水は、同様に、噴射ノズルから高圧で出射される。この洗浄装置を用いて、原理的には、研磨パッドの表面を完全に洗浄できる。しかしながら、特に、ガス水混合物を多量に消費しなければ、研磨パッドに付着した物質の粒子を除去できないので、この洗浄プロセスは効果的ではない。
【０００４】
したがって、本発明の課題は、研磨パッド、特に研磨布、を洗浄するための洗浄装置、および、それを用いた方法を提供することにある。これによって、研磨パッドの表面を完全に、そして効果的に洗浄できる。
【０００５】
本課題を、独立請求項の特徴部分によって解決する。洗浄装置および洗浄方法の有効な形態については、従属請求項に提示する。
【０００６】
本発明は、研磨パッドを洗浄するために、主に２つの洗浄システムを使用するという基本構想に基づいており、第１洗浄システムは、研磨パッドの表面を前洗浄または粗洗浄し、第２洗浄システムは、表面の後洗浄を行う。第１洗浄システムは、主に、研磨パッドの表面が研削される、回転する研削盤を備えている。それに対して、第２洗浄システムは、主に、従来技術によって知られており、上述の明細書ＤＥ １９７ ３７ ８５４ Ａ１に記載されたガス水混合物を、研磨パッドの表面に出射するための散水装置によって構成されている。
【０００７】
研磨パッドの表面の洗浄方法では、第１洗浄工程で研磨パッドの全表面を研削し、続いて、第２洗浄工程でガス水混合物を高圧で表面に供給する。場合によっては、両洗浄工程を、交互に連続して何度も実施してもよい。
【０００８】
しかし、洗浄方法の有効な実施形態では、両洗浄工程を同時に実施する。つまり、異なる表面部分を同時に研削するか、または、表面に、ガス水混合物を供給する。そして、研磨パッドが主軸の周りを回転運動することによって、表面のほぼ全ての部分に両洗浄工程を少なくとも１度施すように設定する。
【０００９】
このために、洗浄装置は、以下のように設計されていることが好ましい。第１に、研磨パッドの洗浄される表面が、研削盤と散水装置の出射側とに面するように、洗浄される研磨パッドを配置できる。第２に、研削盤および散水装置は、研磨パッドの異なる表面部分と対向して配置されている。また、研磨パッドが主軸を中心として回転できるように、研削盤および散水装置は、それぞれ保持アームに取り付けられている。また、それらの少なくとも１つを、水平方向に方向転換可能となるように配置する。加えて、研削盤の保持アームには、研削盤によって研磨パッドの表面から除去された研削粒子を洗い落とすための吹き付けノズルを取り付けることができる。
【００１０】
さらに、洗浄装置は、液体ノズルを備えていてもよい。この液体ノズルを用いて、研磨パッドの表面の、他の部分に、液体、特に水が供給される。これによって、研磨パッドの表面、特に、ガス水混合物が供給される直前の表面部分を、液体ノズルから噴射される噴射水によって、的を絞って洗い落とすことができる。
【００１１】
半導体プロセス技術における化学的機械研磨工程に用いられる研磨パッドは、多くの場合、円型、実質的には半導体ウェハの形状をしている。したがって、洗浄装置は、この洗浄装置の中に、好ましくは回転できるように配置された土台上に、洗浄プロセス用の円型の研磨パッドを配置できるように設計されていることが好ましい。この場合、研削盤、散水装置、および場合によっては液体ノズルを、円型をした研磨パッドの異なる周辺部分に配置できる。また、これらの各部分と研磨パッドの回転運動とを、以下のように規定することが好ましい。つまり、表面部分が研削盤によって洗浄処理され、続いて、ガス水混合物が供給され、最後に、液体ノズルからの噴射水によって的を絞って洗い落とされるように規定することが好ましい。
【００１２】
また、研削盤および散水装置の両方がそれら各々の保持アームに沿って移動できるように、上記研削盤および散水装置を保持アームに取り付けてもよい。
【００１３】
ガス水混合物を噴射するための散水装置を、上述した明細書ＤＥ １９７ ３７ ８５４ Ａ１に記載されているように実施できる。つまり、本出願の開示内容は、上記明細書の全内容、特にガス水混合物用の散水装置の構造および散水装置へのガス水混合物の供給に関係する部分を含んでいる。特に、上記明細書では、散水装置の入射側にガス供給管および水供給管が配置されている。このガス水供給管によって、異なる供給源から供給されるガス水混合物の各成分は、散水装置に供給される。さらに、散水装置の出射側には、ガス水混合物を外へ噴射または噴霧する複数のノズルが構成されている。
【００１４】
以上のように、本発明の洗浄装置およびそれに対応する洗浄方法によって、研磨パッド上に存在する磨耗粒子を、完全にかつ効果的に研磨パッドから除去できる。同時に、後に処理されるウェハが前に研磨されたウェハの磨耗によって汚れる危険は著しく減少する。初めに、洗浄される各表面部分では、前洗浄が研削盤を用いた研削によって行われ、次に、後洗浄が散水装置を用いて行われることによって、全洗浄プロセスを非常に効果的に実施でき、散水装置用のガス水混合物の使用量を低減できる。
【００１５】
次に、本発明の洗浄装置の一実施形態を、添付図面に沿って詳述する。図１は、本発明の一実施形態にかかる洗浄装置を概略的に示す断面図である。図２は、図１の洗浄装置を示す平面図である。
【００１６】
図１は、研磨台１１上に配置された研磨布１２を洗浄するための本発明の一実施形態にかかる洗浄装置を概略的に示す断面図である。図２は、洗浄装置を示す平面図であり、各洗浄素子が互いに相対的に、そして、洗浄される研磨布１２の表面に対して相対的に配置されていることを示している。
【００１７】
洗浄装置は、主として、研磨パッド１２の表面を前洗浄するための第１洗浄システム５、および、後洗浄を行うための第２洗浄システム２によって構成されている。第１洗浄システム５は、洗浄工程の間、回転運動を行う円型の研削盤５０を備えている。この研削盤５０は、方向転換可能な保持アーム５１に取り付けられており、この保持アーム５１に沿って移動できる（図２参照）。第１洗浄システム５による洗浄工程の初めに、保持アーム５１の向きを変える。これによって、研削盤５０を、研磨パッド１２の表面上方に配置し、規定圧力を加えることによって研磨パッド１２に乗せる。研削盤５０とは、ダイヤモンドで覆われたざらざらした特殊な表面を備え、かつ、表面の回転運動によって研磨パッド１２の表面をざらざらにする円形盤である。さらに、保持アーム５１には噴霧器５２が取り付けられている。この噴霧器５２は、研削盤５０によって除去されてざらざらになって研磨パッド１２からはがれた研削粒子を、表面液体噴出器５２Ａを用いて洗い落とすものである。
【００１８】
第２洗浄システム２は、主として、保持アーム２５に取り付けられた散水装置２０によって構成されている。本実施形態では、保持アーム２５は固定配置されている。しかし、同様に、第２洗浄システム２の保持アーム２５を方向転換できるように備えてもよい。この散水装置２０の出射側２２には、複数のノズル２３が備えられている。さらに、散水装置２０の入射側２１には、ガス供給管４０および水供給管４１が配置されている。ガス供給管４０は窒素供給源（図示せず）に連結されており、水供給管４１は水供給源（図示せず）に連結されている。配管４０および４１の流速を、それぞれの弁４２，４３（例えば手動の弁）を介して調節できる。また、ガス供給管４０および水供給管４１に対して適切な圧力を加えるために、圧縮空気供給源または他の不活性ガス供給源（図示せず）が備えられている。この圧縮空気供給源または他の不活性ガス供給源とは、圧縮空気制御手段４４を介して、特に圧縮空気制御手段４４ａおよび弁４５を介して水供給管４１に、そして、圧縮空気制御手段４４ｂおよび弁４６を介してガス供給管４０に連結されている。
【００１９】
第２洗浄システム２の散水装置２０では、脱イオン水が高圧で超高純度窒素と混合され、このガス水混合物は、ノズル２３によって研磨パッド１２の表面へ的を絞って吹き付けられる。つまり、弁４２および４３を適切に設置することによって、ガス供給管４０中の規定窒素流入量、および、水供給管４１中の脱イオン水の規定水流入量を調整する。配管４０および４１に位置する成分は、圧縮空気制御手段４４、４４ａ、４４ｂと、弁４５，４６の適切な設置とを介して、圧縮空気を供給する。この結果、散水装置２０に入る際のこれら成分の圧力は、それぞれ、例えば４１３．７ｋＰａ（６０ｐｓｉ）となる。散水装置２０の入射側２１に入った後、これらの成分は混合されて、例えば上記の圧力であればガス水混合物となる。その後、この混合物を、細長い穴のノズル２３を用いて、洗浄される研磨布１２上に吹き付ける。また、吹き付けノズル２３から出射される少し前に脱イオン水および窒素を噴霧することによって、非常に細かく、効果の高い滴が生成される。この滴の運動エネルギーによって、付着した粒子を研磨布１２からはがし、除去するのである。
【００２０】
さらに、洗浄装置には、噴射ノズル３０が備えられている。この噴射ノズル３０からの噴射水３０Ａは、研磨布１２と４５°未満の鋭角をなす。的を絞った噴射水３０Ａの圧力は、同様に高い圧力である。この噴射水３０Ａによって、散水装置２０によって除去された研磨パッド１２の表面の粒子を、的を絞って洗い落とすことができる。その利点は、非常に傷みやすい研磨パッド表面を傷つけることなく、洗浄が行われるということにある。
【００２１】
例えば、研磨パッド１２上で残りのＣＭＰプロセスをできるだけ効果的に処理するために、両洗浄システム２および５を平行して同時に使用できる。初めに、研削盤５０によって集中的な前洗浄を行う。そして、散水装置２０によって、集中的な第２洗浄工程を行う。そのために、回転可能な研磨台１１上に配置された研磨パッド１２を、反時計に回転させる（図２、１２ａ参照）。また、吹き付け領域が回転する研磨パッド１２を長さ１３０ｍｍ以上洗浄するように、散水装置２０を設計する。研磨台１１の回転方向は、洗浄素子（つまり研削盤５０、散水装置１２、噴射ノズル３０）の配置に適している。研削盤５０によって洗浄された部分を、回転運動によって、散水装置２０の噴射領域下に必然的に導く。そして、この噴霧領域において、第２洗浄工程を行う。続いて、研磨パッド１２の表面の、除去された粒子を噴射ノズル３０の噴射水３０Ａによって洗い落とす。
【００２２】
他の実施形態では、第２洗浄システムの保持アーム２５も、同様に方向転換可能であり、初めに洗い落としがなされた箇所に配置することもできる。ここでは、両洗浄工程は別々に行われる。初めに、第１洗浄工程において、研磨パッド１２のほぼ全表面を、向きの変わる保持アーム５１に取り付けられた研削盤５０によって研削する。第１洗浄工程が行われた後、次に、第１洗浄システムの保持アーム５１は方向転換を止め、第２洗浄システムの保持アーム２５が向きを変え始める。続いて第２洗浄工程では、ほぼ全表面を、ガス水混合物を散水装置２０から表面に供給することによって洗浄する。
【図面の簡単な説明】
【図１】
本発明の一実施形態にかかる洗浄装置を概略的に示す断面図である。
【図２】
図１の洗浄装置を示す平面図である。The present invention relates to an apparatus for cleaning a polishing pad used for chemical mechanical polishing of a polishing pad, particularly a semiconductor wafer, and a cleaning method performed using the same during a manufacturing process.
[0001]
In the semiconductor industry, the demand for smaller and higher-performance semiconductor wafers places emphasis on reducing the defect level of the wafer in addition to process control. During the process of patterning and treating semiconductor surfaces, a polishing pad (eg, a polishing cloth) can be used to perform chemical mechanical polishing or the like to remove certain substances. In this regard, known devices include, for example, the so-called IPEC / Westtech 472. This device is used in particular for chemical mechanical polishing of silicon wafers. The polishing process performed thereby is a single wafer process in which the product side of the wafer is chemically mechanically polished. However, material abrasion that occurs during this polishing process accumulates on the polishing pad. This deposit may, for example, damage the surface of these wafers and thus have an adverse effect when polishing the next wafer. This problem occurs particularly when a Cu process is used. This is because the contamination on the silicon wafer to be polished next will damage the components on the silicon wafer.
[0002]
Polishing pads are usually changed very frequently to reduce contamination of the next wafer by abrasion of an already polished wafer and to reduce the load on the polishing pad due to wear. However, replacing the polishing pad is generally inconvenient, as the resulting cost and switching time have a significant effect on the performance of the polishing process.
[0003]
Accordingly, it has been proposed to clean the worn material deposited and the residue of the slurry used for chemical mechanical polishing with respect to the polishing pad used in the polishing process. German patent application DE 197 37 854 A1 (described in the context of the present application) discloses a polishing pad for polishing a wafer, for example an apparatus for cleaning a polishing cloth. This device is mainly constituted by a sprinkler for jetting a gas-water mixture at high pressure. The gas-water mixture is sprayed and sprayed onto the polishing pad to be cleaned via a nozzle arranged on the outlet side of the watering device. Further, a jet nozzle for jetting the jet water in a targeted manner is provided on the polishing pad to be cleaned. The targeted injection water is similarly discharged from the injection nozzle at a high pressure. In principle, the surface of the polishing pad can be completely cleaned using this cleaning device. However, this cleaning process is not effective, especially since the particles of material adhering to the polishing pad cannot be removed without consuming a large amount of the gas water mixture.
[0004]
Accordingly, an object of the present invention is to provide a cleaning apparatus for cleaning a polishing pad, particularly a polishing cloth, and a method using the same. As a result, the surface of the polishing pad can be completely and effectively cleaned.
[0005]
This problem is solved by the features of the independent claims. Advantageous embodiments of the cleaning device and the cleaning method are given in the dependent claims.
[0006]
The present invention is based on the basic idea of using mainly two cleaning systems for cleaning the polishing pad, wherein the first cleaning system pre-cleans or coarse-cleans the surface of the polishing pad and the second cleaning system. The system performs a post-cleaning of the surface. The first cleaning system mainly includes a rotating grinder on which the surface of the polishing pad is ground. On the other hand, a second cleaning system is mainly known from the prior art and is a watering device for emitting a gas water mixture as described in the above-mentioned specification DE 197 37 854 A1 to the surface of the polishing pad. It is constituted by.
[0007]
In the method of cleaning the surface of the polishing pad, the entire surface of the polishing pad is ground in a first cleaning step, and then a gas-water mixture is supplied to the surface at a high pressure in a second cleaning step. In some cases, both cleaning steps may be performed repeatedly and continuously.
[0008]
However, in an advantageous embodiment of the cleaning method, both cleaning steps are performed simultaneously. That is, different surface portions are ground simultaneously or a gas-water mixture is supplied to the surface. Then, the polishing pad is set so that both cleaning steps are performed at least once on almost all portions of the surface by rotating the polishing pad about the main axis.
[0009]
For this purpose, the cleaning device is preferably designed as follows. First, the polishing pad to be cleaned can be arranged such that the surface to be cleaned of the polishing pad faces the grinder and the exit side of the sprinkler. Second, the grinder and watering device are located opposite different surface portions of the polishing pad. The grinding machine and the sprinkler are each attached to a holding arm so that the polishing pad can rotate about the main shaft. Further, at least one of them is arranged so as to be able to change its direction in the horizontal direction. In addition, the holding arm of the grinding machine can be fitted with a spray nozzle for washing away the abrasive particles removed from the surface of the polishing pad by the grinding machine.
[0010]
Further, the cleaning device may include a liquid nozzle. The liquid nozzle is used to supply a liquid, particularly water, to another part of the surface of the polishing pad. Thus, the surface of the polishing pad, particularly the surface portion immediately before the gas-water mixture is supplied, can be washed off with a target by the jet water jetted from the liquid nozzle.
[0011]
Polishing pads used in chemical mechanical polishing processes in semiconductor processing technology often have a circular, substantially semiconductor wafer shape. Accordingly, the cleaning apparatus is preferably designed such that a circular polishing pad for the cleaning process can be arranged on a base, preferably rotatably arranged therein. In this case, the grinding machine, the sprinkler and possibly the liquid nozzle can be arranged at different peripheral parts of the circular polishing pad. Further, it is preferable to define the respective portions and the rotational movement of the polishing pad as follows. In other words, it is preferable that the surface portion is cleaned by a grinder, the gas-water mixture is subsequently supplied, and finally, the surface portion is washed off by spraying water from a liquid nozzle.
[0012]
The grinding machine and the sprinkler may be mounted on the holding arm such that both the grinder and the sprinkler can move along their respective holding arms.
[0013]
A watering device for injecting a gas-water mixture can be implemented as described in the above-mentioned specification DE 197 37 854 A1. That is, the disclosure content of the present application includes the entire contents of the above specification, particularly the parts related to the structure of the sprinkler for the gas water mixture and the supply of the gas water mixture to the sprinkler. In particular, in the above specification, the gas supply pipe and the water supply pipe are arranged on the incident side of the sprinkler. By means of this gas water supply pipe, each component of the gas water mixture supplied from different sources is supplied to the sprinkler. Furthermore, a plurality of nozzles for injecting or spraying the gas-water mixture to the outside are formed on the exit side of the watering device.
[0014]
As described above, the cleaning device of the present invention and the corresponding cleaning method can completely and effectively remove the wear particles present on the polishing pad from the polishing pad. At the same time, the risk that subsequently processed wafers will become fouled by the wear of previously polished wafers is significantly reduced. First, for each surface part to be cleaned, the pre-cleaning is performed by grinding using a grinder, and then the post-cleaning is performed using a sprinkler, so that the entire cleaning process is performed very effectively. It is possible to reduce the use amount of the gas water mixture for the sprinkler.
[0015]
Next, an embodiment of the cleaning device of the present invention will be described in detail with reference to the accompanying drawings. FIG. 1 is a sectional view schematically showing a cleaning apparatus according to one embodiment of the present invention. FIG. 2 is a plan view showing the cleaning device of FIG.
[0016]
FIG. 1 is a cross-sectional view schematically illustrating a cleaning apparatus for cleaning a polishing pad 12 disposed on a polishing table 11 according to an embodiment of the present invention. FIG. 2 is a plan view showing the cleaning apparatus, showing that the cleaning elements are disposed relative to each other and relative to the surface of the polishing pad 12 to be cleaned.
[0017]
The cleaning device mainly includes a first cleaning system 5 for pre-cleaning the surface of the polishing pad 12 and a second cleaning system 2 for performing post-cleaning. The first cleaning system 5 includes a circular grinder 50 that performs a rotary motion during the cleaning process. The grinding machine 50 is mounted on a holding arm 51 that can change its direction and can move along the holding arm 51 (see FIG. 2). At the beginning of the cleaning process by the first cleaning system 5, the direction of the holding arm 51 is changed. Thus, the grinding machine 50 is disposed above the surface of the polishing pad 12 and is placed on the polishing pad 12 by applying a specified pressure. The grinder 50 is a circular disk having a rough special surface covered with diamond, and roughening the surface of the polishing pad 12 by rotating the surface. Further, a sprayer 52 is attached to the holding arm 51. The sprayer 52 uses a surface liquid ejector 52A to wash off the abrasive particles that have been removed by the grinder 50 and become loose and come off the polishing pad 12.
[0018]
The second cleaning system 2 is mainly configured by the watering device 20 attached to the holding arm 25. In the present embodiment, the holding arm 25 is fixedly arranged. However, similarly, the holding arm 25 of the second cleaning system 2 may be provided so as to be able to change its direction. A plurality of nozzles 23 are provided on the emission side 22 of the watering device 20. Further, a gas supply pipe 40 and a water supply pipe 41 are arranged on the incident side 21 of the water spray device 20. The gas supply pipe 40 is connected to a nitrogen supply source (not shown), and the water supply pipe 41 is connected to a water supply source (not shown). The flow rates of the pipes 40 and 41 can be adjusted via respective valves 42, 43 (eg, manual valves). Also, a compressed air supply or other inert gas supply (not shown) is provided to apply an appropriate pressure to the gas supply pipe 40 and the water supply pipe 41. This compressed air supply or another inert gas supply is connected to the water supply pipe 41 via the compressed air control means 44, in particular via the compressed air control means 44a and the valve 45, and to the compressed air control means 44b. And a gas supply pipe 40 via a valve 46.
[0019]
In the sprinkling device 20 of the second cleaning system 2, deionized water is mixed with ultra-high-purity nitrogen at high pressure, and this gas water mixture is sprayed onto the surface of the polishing pad 12 with a nozzle 23 in a focused manner. That is, by properly installing the valves 42 and 43, the specified nitrogen inflow into the gas supply pipe 40 and the specified water inflow into the water supply pipe 41 are adjusted. Components located in lines 40 and 41 supply compressed air via compressed air control means 44, 44a, 44b and appropriate installation of valves 45,46. As a result, the pressure of these components when entering the watering device 20 is, for example, 413.7 kPa (60 psi). After entering the inlet side 21 of the sprinkler 20, these components are mixed, for example, at the above pressure, into a gas-water mixture. Thereafter, the mixture is sprayed onto the polishing pad 12 to be cleaned by using a nozzle 23 having an elongated hole. By spraying deionized water and nitrogen shortly before exiting from the spray nozzle 23, very fine and highly effective droplets are generated. The attached particles are peeled off the polishing cloth 12 and removed by the kinetic energy of the droplets.
[0020]
Further, the cleaning device is provided with an injection nozzle 30. The spray water 30A from the spray nozzle 30 forms an acute angle of less than 45 ° with the polishing pad 12. The pressure of the targeted jet water 30A is similarly high. By the spray water 30A, particles on the surface of the polishing pad 12 removed by the water sprinkling device 20 can be washed off by focusing. The advantage is that the cleaning is performed without damaging the very fragile polishing pad surface.
[0021]
For example, both cleaning systems 2 and 5 can be used simultaneously in parallel to treat the remaining CMP process on the polishing pad 12 as effectively as possible. First, intensive pre-cleaning is performed by the grinder 50. Then, an intensive second cleaning step is performed by the water spray device 20. For that purpose, the polishing pad 12 arranged on the rotatable polishing table 11 is rotated counterclockwise (see FIG. 2, 12a). Further, the sprinkler 20 is designed so as to wash the polishing pad 12 in which the spray area rotates, with a length of 130 mm or more. The rotation direction of the polishing table 11 is suitable for the arrangement of the cleaning elements (that is, the grinder 50, the water spray device 12, and the spray nozzle 30). The part that has been cleaned by the grinder 50 is necessarily guided under the injection area of the sprinkler 20 by a rotary movement. Then, a second cleaning step is performed in this spray area. Subsequently, the removed particles on the surface of the polishing pad 12 are washed away by the spray water 30A of the spray nozzle 30.
[0022]
In other embodiments, the retaining arm 25 of the second cleaning system is similarly reversible and may be located where it was originally washed off. Here, both cleaning steps are performed separately. First, in the first cleaning step, almost the entire surface of the polishing pad 12 is ground by the grinding machine 50 attached to the holding arm 51 that changes direction. After the first cleaning step has been performed, the holding arm 51 of the first cleaning system then stops turning and the holding arm 25 of the second cleaning system starts to turn. Subsequently, in the second cleaning step, almost the entire surface is cleaned by supplying the gas-water mixture from the sprinkler 20 to the surface.
[Brief description of the drawings]
FIG.
It is a sectional view showing roughly a washing device concerning one embodiment of the present invention.
FIG. 2
FIG. 2 is a plan view showing the cleaning device of FIG. 1.
Claims (10)
ガス水混合物を高圧で噴射するための散水装置（２０）を備えた第２洗浄システム（２）とを有する、研磨パッド（１２）、特に研磨布、を洗浄するための洗浄装置。A first cleaning system (5) with a grinding machine (50);
A second cleaning system (2) with a water spray device (20) for injecting the gas water mixture at high pressure, the cleaning device for cleaning a polishing pad (12), in particular a polishing cloth.
上記研削盤（５０）および散水装置（２０）は、研磨パッド（１２）の表面の異なる部分に位置するように保持アーム（５１，２５）に取り付けられており、
上記研磨パッド（１２）は、主軸の回りを回転できるように備えられていることを特徴とする請求項１に記載の洗浄装置。The polishing pad (12) can be arranged such that the surface to be cleaned of the polishing pad (12) faces the grinding machine (50) and the exit side (22) of the water sprinkler (20);
The grinding machine (50) and the sprinkler (20) are attached to the holding arms (51, 25) so as to be located at different portions of the surface of the polishing pad (12).
The cleaning device according to claim 1, wherein the polishing pad (12) is provided so as to be rotatable around a main shaft.
上記研削盤（５０）、散水装置（２０）、および、場合によっては液体ノズル（３０）は、研磨パッド（１２）の異なる周辺部分に配置されていることを特徴とする請求項１〜５のいずれかに記載の洗浄装置。The cleaning device is designed to include a substantially circular polishing pad (12);
6. The polishing machine according to claim 1, wherein the grinding machine, the watering device, and, in some cases, the liquid nozzle are arranged at different peripheral portions of the polishing pad. The cleaning device according to any one of the above.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE10059180 | 2000-11-29 | ||
| PCT/DE2001/004082 WO2002043923A1 (en) | 2000-11-29 | 2001-10-25 | Cleaning device for cleaning polishing cloths used for polishing semiconductor wafers |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JP2004514300A true JP2004514300A (en) | 2004-05-13 |
Family
ID=7665052
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2002545886A Pending JP2004514300A (en) | 2000-11-29 | 2001-10-25 | Cleaning apparatus for cleaning a polishing cloth used for polishing a semiconductor wafer |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US20030216112A1 (en) |
| JP (1) | JP2004514300A (en) |
| KR (1) | KR20040004453A (en) |
| DE (1) | DE10195157B4 (en) |
| WO (1) | WO2002043923A1 (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
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| JP2006332550A (en) * | 2005-05-30 | 2006-12-07 | Asahi Sunac Corp | Polishing pad dressing-property evaluation method and polishing pad dressing method |
| JP2006344878A (en) * | 2005-06-10 | 2006-12-21 | Disco Abrasive Syst Ltd | Processing apparatus and processing method |
| CN111633563A (en) * | 2020-06-15 | 2020-09-08 | 衢州学院 | Polishing medium preparation device and method, and mechanical chemical polishing equipment and method |
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| JP3797861B2 (en) * | 2000-09-27 | 2006-07-19 | 株式会社荏原製作所 | Polishing device |
| KR100615100B1 (en) * | 2005-08-16 | 2006-08-22 | 삼성전자주식회사 | Cleaner of polishing pad and chemical mechanical polishing apparatus having the same |
| US7913705B2 (en) * | 2007-02-07 | 2011-03-29 | Tbw Industries, Inc. | Cleaning cup system for chemical mechanical planarization apparatus |
| KR100901239B1 (en) * | 2008-03-31 | 2009-06-08 | 신진유지보수 주식회사 | Fixed apparatus for water pipe tunnel regeneration automatic device |
| KR100996234B1 (en) * | 2010-08-30 | 2010-11-23 | 서부길 | Cleaning equipment of polishing pad for chemical mechanical polishing |
| CN102407477A (en) * | 2011-11-14 | 2012-04-11 | 云南钛业股份有限公司 | Cleaning method for titanium or titanium alloy condensing screen |
| US9630295B2 (en) * | 2013-07-17 | 2017-04-25 | Taiwan Semiconductor Manufacturing Co., Ltd. | Mechanisms for removing debris from polishing pad |
| CN106540895B (en) * | 2015-09-16 | 2019-06-04 | 泰科电子(上海)有限公司 | Cleaning system |
| CN106363505A (en) * | 2016-09-20 | 2017-02-01 | 陕西理工学院 | Grinding tool equipment |
| CN113290507A (en) * | 2021-07-06 | 2021-08-24 | 北京半导体专用设备研究所（中国电子科技集团公司第四十五研究所） | Polishing solution conveying device |
| KR102465486B1 (en) | 2021-10-19 | 2022-11-11 | (주)퓨렉스 | Cleaning apparatus for polishing pad |
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| JP2622069B2 (en) * | 1993-06-30 | 1997-06-18 | 三菱マテリアル株式会社 | Dressing equipment for polishing cloth |
| US5456627A (en) * | 1993-12-20 | 1995-10-10 | Westech Systems, Inc. | Conditioner for a polishing pad and method therefor |
| US5486131A (en) * | 1994-01-04 | 1996-01-23 | Speedfam Corporation | Device for conditioning polishing pads |
| JP2647050B2 (en) * | 1995-03-31 | 1997-08-27 | 日本電気株式会社 | Wafer polishing equipment |
| US5578529A (en) * | 1995-06-02 | 1996-11-26 | Motorola Inc. | Method for using rinse spray bar in chemical mechanical polishing |
| JP3678468B2 (en) * | 1995-07-18 | 2005-08-03 | 株式会社荏原製作所 | Polishing device |
| JP2850803B2 (en) * | 1995-08-01 | 1999-01-27 | 信越半導体株式会社 | Wafer polishing method |
| JP2833549B2 (en) * | 1995-11-07 | 1998-12-09 | 日本電気株式会社 | Polishing cloth surface adjustment method and mechanism |
| US5893753A (en) * | 1997-06-05 | 1999-04-13 | Texas Instruments Incorporated | Vibrating polishing pad conditioning system and method |
| US6139406A (en) * | 1997-06-24 | 2000-10-31 | Applied Materials, Inc. | Combined slurry dispenser and rinse arm and method of operation |
| DE19737854C2 (en) * | 1997-08-29 | 1999-06-17 | Siemens Ag | Device and method for cleaning polishing pads, for example polishing cloths, in particular for polishing wafers |
| US5916010A (en) * | 1997-10-30 | 1999-06-29 | International Business Machines Corporation | CMP pad maintenance apparatus and method |
| JP3615931B2 (en) * | 1998-03-26 | 2005-02-02 | 株式会社荏原製作所 | Polishing apparatus and conditioning method in the polishing apparatus |
| JP3770752B2 (en) * | 1998-08-11 | 2006-04-26 | 株式会社日立製作所 | Semiconductor device manufacturing method and processing apparatus |
| KR20010071353A (en) * | 1999-04-01 | 2001-07-28 | 롤페스 요하네스 게라투스 알베르투스 | Dual cmp pad conditioner |
| US6283840B1 (en) * | 1999-08-03 | 2001-09-04 | Applied Materials, Inc. | Cleaning and slurry distribution system assembly for use in chemical mechanical polishing apparatus |
-
2001
- 2001-10-25 WO PCT/DE2001/004082 patent/WO2002043923A1/en not_active Application Discontinuation
- 2001-10-25 DE DE10195157T patent/DE10195157B4/en not_active Expired - Fee Related
- 2001-10-25 JP JP2002545886A patent/JP2004514300A/en active Pending
- 2001-10-25 KR KR10-2003-7007198A patent/KR20040004453A/en not_active Application Discontinuation
-
2003
- 2003-05-29 US US10/447,387 patent/US20030216112A1/en not_active Abandoned
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006332550A (en) * | 2005-05-30 | 2006-12-07 | Asahi Sunac Corp | Polishing pad dressing-property evaluation method and polishing pad dressing method |
| JP2006344878A (en) * | 2005-06-10 | 2006-12-21 | Disco Abrasive Syst Ltd | Processing apparatus and processing method |
| KR101217002B1 (en) * | 2005-06-10 | 2012-12-31 | 가부시기가이샤 디스코 | Processing apparatus and processing method |
| CN111633563A (en) * | 2020-06-15 | 2020-09-08 | 衢州学院 | Polishing medium preparation device and method, and mechanical chemical polishing equipment and method |
| CN111633563B (en) * | 2020-06-15 | 2021-09-14 | 衢州学院 | Polishing medium preparation device and method, and mechanical chemical polishing equipment and method |
Also Published As
| Publication number | Publication date |
|---|---|
| DE10195157D2 (en) | 2003-11-13 |
| WO2002043923A1 (en) | 2002-06-06 |
| DE10195157B4 (en) | 2010-08-26 |
| KR20040004453A (en) | 2004-01-13 |
| US20030216112A1 (en) | 2003-11-20 |
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