WO2000060645A2 - Dual cmp pad conditioner - Google Patents
Dual cmp pad conditioner Download PDFInfo
- Publication number
- WO2000060645A2 WO2000060645A2 PCT/US2000/008340 US0008340W WO0060645A2 WO 2000060645 A2 WO2000060645 A2 WO 2000060645A2 US 0008340 W US0008340 W US 0008340W WO 0060645 A2 WO0060645 A2 WO 0060645A2
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- pad
- conditioning
- cmp
- polishing apparatus
- slurry
- Prior art date
Links
- 230000009977 dual effect Effects 0.000 title description 2
- 238000005498 polishing Methods 0.000 claims abstract description 72
- 230000003750 conditioning effect Effects 0.000 claims abstract description 49
- 239000002002 slurry Substances 0.000 claims abstract description 44
- 239000000463 material Substances 0.000 claims description 17
- 239000011538 cleaning material Substances 0.000 claims description 12
- 239000012530 fluid Substances 0.000 claims description 4
- 239000007789 gas Substances 0.000 claims 2
- 238000004140 cleaning Methods 0.000 abstract description 11
- 238000004519 manufacturing process Methods 0.000 abstract description 10
- 239000000126 substance Substances 0.000 abstract description 6
- 235000012431 wafers Nutrition 0.000 description 50
- 238000000034 method Methods 0.000 description 29
- 239000004065 semiconductor Substances 0.000 description 23
- 230000008569 process Effects 0.000 description 21
- 239000006227 byproduct Substances 0.000 description 9
- 238000006243 chemical reaction Methods 0.000 description 7
- 239000002245 particle Substances 0.000 description 7
- 239000002184 metal Substances 0.000 description 4
- 230000001143 conditioned effect Effects 0.000 description 3
- 238000009826 distribution Methods 0.000 description 3
- 238000007517 polishing process Methods 0.000 description 3
- 230000007547 defect Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000008119 colloidal silica Substances 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000000725 suspension Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B53/00—Devices or means for dressing or conditioning abrasive surfaces
- B24B53/017—Devices or means for dressing, cleaning or otherwise conditioning lapping tools
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B53/00—Devices or means for dressing or conditioning abrasive surfaces
- B24B53/013—Application of loose grinding agent as auxiliary tool during truing operation
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B53/00—Devices or means for dressing or conditioning abrasive surfaces
- B24B53/02—Devices or means for dressing or conditioning abrasive surfaces of plane surfaces on abrasive tools
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B57/00—Devices for feeding, applying, grading or recovering grinding, polishing or lapping agents
- B24B57/02—Devices for feeding, applying, grading or recovering grinding, polishing or lapping agents for feeding of fluid, sprayed, pulverised, or liquefied grinding, polishing or lapping agents
Definitions
- the present device relates generally to semiconductor devices and their fabrication
- CMP chemical-mechanical polishing
- a byproduct of the increased complexity of semiconductor devices includes uneven
- each level within the device is patterned, resulting in a surface with varied "step-heights"
- Planarization is a term describing the surface geometry of a semiconductor device.
- planarization occurs when the surface of the dielectric directly models the "step-height"
- the degree of planarization refers to the degree to which the varied surface geometry can be "planarized,” or smoothed out into a
- CMP chemical-mechanical polishing
- CMP is a popular
- a CMP process involves securing a semiconductor wafer to a wafer
- a slurry typically a colloidal silica that is a suspension of SiO, particles, is
- the particle size typically varies from 100 angstroms to 3 microns.
- the slurry is generally applied using a wand feeding to the wafer holder and pad.
- removal of material from the wafer is a combination of chemical and mechanical rates.
- the chemical removal rate is a function of the size of the slurry particles and the
- a conditioner is also typically used
- the conditioner aids in the CMP polishing process
- the traditional method for conditioning the pad and dispensing slurry is to use two
- the present invention is directed to a method and apparatus for improving the CMP
- the improvements including but not limited to enhanced pad cleaning and
- the present invention includes a CMP
- polishing apparatus having at least two conditioning arms for uses including the conditioning
- the CMP polishing apparatus includes a first pad conditioner configured
- a second pad conditioner is
- the present invention is directed to a
- apparatus includes at least two conditioning arms. Slurry is dispensed and the pad is
- polishing pad is cleaned using a second pad conditioner coupled to another of the polishing pad
- the present invention is directed to a
- the CMP apparatus includes a polishing pad and at least two
- the wafer is coupled to the CMP apparatus.
- the pad is conditioned using a first pad conditioner
- a slurry is supplied by way of the first pad conditioner.
- polishing pad is supplied by way of the second pad conditioner, and a portion of the polishing pad
- the present invention is directed to a
- the CMP polishing apparatus having a polishing pad.
- the apparatus includes means for both
- FIG. 1 shows an arrangement for a CMP process for polishing a semiconductor wafer
- FIG. 2 shows an arrangement for a CMP process for polishing two semiconductor
- FIG. 3 shows an arrangement for a CMP process for polishing a semiconductor wafer
- the present invention makes possible the use of
- a single apparatus may be used both for supplying cleaning material and for conditioning the pad in the CMP process. The use of these apparatuses displaces the need for
- a dispensing wand for the dispense of materials including slurry and cleaning materials, such
- the invention is directed to an apparatus 100 for CMP.
- the apparatus 100 has at least two
- the polishing pad 150 is configured and arranged to rotate.
- conditioning arms
- the CMP polishing apparatus 100 includes a first pad
- conditioner 130 configured and arranged both to dispense slurry and to condition the pad.
- second pad conditioner 140 is configured and arranged to clean a portion of the polishing pad
- a wafer holder 160 is configured and arranged to hold a
- the first pad conditioner 130 and the second pad conditioner 140 may be configured
- the pad conditioners may include
- rotating means such as bearings, wheels, and bushings.
- the rotating shaft For effecting rotation, the rotating shaft
- means may be coupled to devices such as gears, belts, pulleys, and direct drives.
- devices such as gears, belts, pulleys, and direct drives.
- the pad conditioners may comprise a shower head type design, allowing material to be added
- the pad conditioners may also contain items such as brushes
- cleaning or polishing materials are supplied to the surface
- the supply lines may be coupled to the pad conditioners in an appropriate manner, such as using fixed or
- such multiple fluids may be supplied individually, pre-mixed,
- FIG. 2 shows an apparatus 200 for CMP, according to another example embodiment
- FIG. 2 includes all of the embodiments illustrated by FIG. 1, and
- apparatus 200 has at least two additional conditioning arms 210 and 220 for use including
- the additional conditioning arms 210 and 220 are
- the CMP polishing apparatus 200 includes a third pad conditioner 230
- a fourth pad configured and arranged both to dispense slurry and to condition the pad.
- conditioner 240 is configured and arranged to clean a portion of the polishing pad and to
- a second wafer holder 260 is configured and arranged to hold a
- the pad conditioners and the wafer holder may further be configured and arranged to rotate.
- FIG. 3 shows an apparatus 300 for CMP, according to another example embodiment
- the apparatus 300 has at least two conditioning arms 310 and 320
- the polishing belt 350 is
- conditioning arms are configured and arranged to move in a direction generally perpendicular
- the CMP polishing apparatus 300 includes a first belt
- a second belt conditioner 340 is configured and arranged to clean a portion of the polishing belt
- a wafer holder 360 is configured and arranged to hold a
- conditioners and the wafer holder may further be configured and arranged to rotate.
- the present invention is directed to a
- apparatus has at least two conditioning arms. Slurry is dispensed and the pad is conditioned
- polishing pad is cleaned using a second pad conditioner coupled to another of the
- a semiconductor wafer is attached to a wafer holder
- polishing pad 160 is held face-down against a polishing pad 150.
- the polishing pad is caused to rotate
- Conditioning arm 110 is moved in a direction about generally
- Pad conditioner 130 is used to dispense slurry for the CMP process to be performed on the
- Conditioning arm 120 is also moved in a direction about
- Pad conditioner 140 is used to dispense cleaning materials, remove any excess slurry,
- pad conditioners and the wafer holder may further be configured and arranged to rotate.
- a second semiconductor wafer is attached to a wafer
- polishing pad 150 is caused
- conditioning arm 110 is moved in a direction about generally tangential to the rotation of the polishing pad 150,
- Pad conditioner 130 is used to dispense slurry
- Conditioning arm 120 is also moved in a direction about generally tangential to the rotation
- Pad conditioner 140 is used
- Pad conditioner 140 may, for example, remove these materials and
- the second semiconductor wafer is processed similarly to the first. Conditioning arm
- Pad conditioner 230 is used to dispense slurry
- Conditioning arm 220 is also moved in a direction about generally tangential to the rotation
- Pad conditioner 240 is used
- Pad conditioner 240 may remove this material such that about all of the
- At least one of the pad conditioners and the wafer holder may further be configured
- the present invention is
- wafer is attached to a wafer holder 360, and is held face-down against a polishing belt 350.
- the polishing belt is caused to move as shown by arrow 370 in FIG. 3.
- Pad conditioner 330 is used to dispense slurry for the
- polishing belt 350 as depicted with arrow 390 in FIG. 3.
- Pad conditioner 340 is used to
- the slurry of the slurry may be made more uniform.
- reaction byproduct can be completely removed from the pad. The removal of these materials
- the materials can be removed prior to their reaching another wafer.
- results may include more thorough conditioning of the pad
- conditioner grid are extended, which results in lowering the die cost and increasing the
- the polish rate becomes more uniform.
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Grinding-Machine Dressing And Accessory Apparatuses (AREA)
Abstract
Description
Claims
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020007013508A KR20010071353A (en) | 1999-04-01 | 2000-03-29 | Dual cmp pad conditioner |
EP00919823A EP1190455A2 (en) | 1999-04-01 | 2000-03-29 | Dual cmp pad conditioner |
AU40444/00A AU4044400A (en) | 1999-04-01 | 2000-03-29 | Dual cmp pad conditioner |
JP2000610047A JP2002540972A (en) | 1999-04-01 | 2000-03-29 | Double CMP pad adjustment device |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US28371699A | 1999-04-01 | 1999-04-01 | |
US09/283,716 | 1999-04-01 |
Publications (2)
Publication Number | Publication Date |
---|---|
WO2000060645A2 true WO2000060645A2 (en) | 2000-10-12 |
WO2000060645A3 WO2000060645A3 (en) | 2002-01-17 |
Family
ID=23087250
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US2000/008340 WO2000060645A2 (en) | 1999-04-01 | 2000-03-29 | Dual cmp pad conditioner |
Country Status (6)
Country | Link |
---|---|
EP (1) | EP1190455A2 (en) |
JP (1) | JP2002540972A (en) |
KR (1) | KR20010071353A (en) |
CN (1) | CN1362907A (en) |
AU (1) | AU4044400A (en) |
WO (1) | WO2000060645A2 (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2002043923A1 (en) * | 2000-11-29 | 2002-06-06 | Infineon Technologies Ag | Cleaning device for cleaning polishing cloths used for polishing semiconductor wafers |
EP1334802A1 (en) * | 2000-10-24 | 2003-08-13 | Ebara Corporation | Polisher |
DE10308064A1 (en) * | 2003-02-26 | 2004-09-16 | Infineon Technologies Ag | Mechanism for chemo-mechanical polishing (CMP) of semiconductor wafers with polishing medium specified supply, polishing plate and polishing head, which presses wafer onto plate, with supply appliance for polishing medium |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7125324B2 (en) * | 2004-03-09 | 2006-10-24 | 3M Innovative Properties Company | Insulated pad conditioner and method of using same |
KR20110065464A (en) * | 2008-08-14 | 2011-06-15 | 어플라이드 머티어리얼스, 인코포레이티드 | Chemical mechanical polisher having movable slurry dispensers and method |
US20100041316A1 (en) * | 2008-08-14 | 2010-02-18 | Yulin Wang | Method for an improved chemical mechanical polishing system |
US20100291840A1 (en) * | 2009-05-12 | 2010-11-18 | Taiwan Semiconductor Manufacturing Co., Ltd. | System and method for conditioning chemical mechanical polishing apparatus using multiple conditioning disks |
CN102554782A (en) * | 2010-12-20 | 2012-07-11 | 中芯国际集成电路制造(上海)有限公司 | Polishing pad cleaning device and polishing pad finisher |
US8920214B2 (en) * | 2011-07-12 | 2014-12-30 | Chien-Min Sung | Dual dressing system for CMP pads and associated methods |
US9149906B2 (en) * | 2011-09-07 | 2015-10-06 | Taiwan Semiconductor Manufacturing Company, Ltd. | Apparatus for CMP pad conditioning |
CN103182681A (en) * | 2011-12-28 | 2013-07-03 | 青岛嘉星晶电科技股份有限公司 | Rectifying device for millstone of double-sided grinder, and rectifying method thereof |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5421768A (en) * | 1993-06-30 | 1995-06-06 | Mitsubishi Materials Corporation | Abrasive cloth dresser |
US5683289A (en) * | 1996-06-26 | 1997-11-04 | Texas Instruments Incorporated | CMP polishing pad conditioning apparatus |
WO1998045090A1 (en) * | 1997-04-04 | 1998-10-15 | Obsidian, Inc. | Polishing media magazine for improved polishing |
-
2000
- 2000-03-29 KR KR1020007013508A patent/KR20010071353A/en not_active Application Discontinuation
- 2000-03-29 WO PCT/US2000/008340 patent/WO2000060645A2/en not_active Application Discontinuation
- 2000-03-29 AU AU40444/00A patent/AU4044400A/en not_active Abandoned
- 2000-03-29 CN CN00800898A patent/CN1362907A/en active Pending
- 2000-03-29 EP EP00919823A patent/EP1190455A2/en not_active Withdrawn
- 2000-03-29 JP JP2000610047A patent/JP2002540972A/en active Pending
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5421768A (en) * | 1993-06-30 | 1995-06-06 | Mitsubishi Materials Corporation | Abrasive cloth dresser |
US5683289A (en) * | 1996-06-26 | 1997-11-04 | Texas Instruments Incorporated | CMP polishing pad conditioning apparatus |
WO1998045090A1 (en) * | 1997-04-04 | 1998-10-15 | Obsidian, Inc. | Polishing media magazine for improved polishing |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP1334802A1 (en) * | 2000-10-24 | 2003-08-13 | Ebara Corporation | Polisher |
EP1334802A4 (en) * | 2000-10-24 | 2005-08-31 | Ebara Corp | Polisher |
WO2002043923A1 (en) * | 2000-11-29 | 2002-06-06 | Infineon Technologies Ag | Cleaning device for cleaning polishing cloths used for polishing semiconductor wafers |
DE10195157B4 (en) * | 2000-11-29 | 2010-08-26 | Qimonda Ag | Cleaning device for cleaning polishing cloths used for polishing semiconductor wafers |
DE10308064A1 (en) * | 2003-02-26 | 2004-09-16 | Infineon Technologies Ag | Mechanism for chemo-mechanical polishing (CMP) of semiconductor wafers with polishing medium specified supply, polishing plate and polishing head, which presses wafer onto plate, with supply appliance for polishing medium |
DE10308064B4 (en) * | 2003-02-26 | 2006-03-09 | Infineon Technologies Ag | Polishing agent supply in CMP processes |
Also Published As
Publication number | Publication date |
---|---|
JP2002540972A (en) | 2002-12-03 |
WO2000060645A3 (en) | 2002-01-17 |
KR20010071353A (en) | 2001-07-28 |
EP1190455A2 (en) | 2002-03-27 |
AU4044400A (en) | 2000-10-23 |
CN1362907A (en) | 2002-08-07 |
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