WO2002041374A1 - Systeme d'exposition a des faisceaux d'electrons, procede de correction de faisceaux d'electrons, procede d'exposition a des faisceaux d'electrons, et procede permettant de produire un element semi-conducteur - Google Patents

Systeme d'exposition a des faisceaux d'electrons, procede de correction de faisceaux d'electrons, procede d'exposition a des faisceaux d'electrons, et procede permettant de produire un element semi-conducteur Download PDF

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Publication number
WO2002041374A1
WO2002041374A1 PCT/JP2001/009815 JP0109815W WO0241374A1 WO 2002041374 A1 WO2002041374 A1 WO 2002041374A1 JP 0109815 W JP0109815 W JP 0109815W WO 0241374 A1 WO0241374 A1 WO 0241374A1
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WO
WIPO (PCT)
Prior art keywords
electron beam
exposure
detection
electron
irradiation position
Prior art date
Application number
PCT/JP2001/009815
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English (en)
Japanese (ja)
Inventor
Shinichi Hamaguchi
Hiroshi Yasuda
Original Assignee
Advantest Corporation
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Publication date
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Publication of WO2002041374A1 publication Critical patent/WO2002041374A1/fr

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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/304—Controlling tubes by information coming from the objects or from the beam, e.g. correction signals
    • H01J37/3045—Object or beam position registration
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
    • H01J37/3177—Multi-beam, e.g. fly's eye, comb probe

Definitions

  • Electron beam exposure apparatus electron beam correction method, electron beam exposure method, and semiconductor device manufacturing method
  • the present invention relates to an electron beam exposure apparatus, an electron beam correction method, an electron beam exposure method, and a semiconductor device manufacturing method.
  • This application is related to the following Japanese patent application. For those designated countries that are allowed to be incorporated by reference to the literature, the contents described in the following application are incorporated into this application by reference and are incorporated in the description of this application.
  • a conventional electron beam exposure apparatus that performs exposure processing on a wafer using a plurality of electron beams detects all the electron beam irradiation positions and corrects all the electron beam irradiation positions when correcting the electron beam irradiation positions. The correction value at each irradiation position was determined.
  • an object of the present invention is to provide an electron beam correction method and an electron beam exposure apparatus which can solve the above-mentioned problems. This object is achieved by a combination of features described in the independent claims.
  • the dependent claims define further advantageous embodiments of the present invention. Disclosure of the invention
  • an electron beam exposure apparatus for exposing a wafer with an electron beam, comprising: a wafer stage on which the wafer is mounted; A first electron beam generating section for generating an exposure electron beam to be exposed, a mark section provided on an area other than an area where the wafer is mounted on the wafer stage, and an irradiation position of the exposure electron beam. A second electron beam generator for generating a detection electron beam to be irradiated on the mark portion.
  • the second electron beam generator may generate a detection electron beam for detecting the irradiation position of the exposure electron beam.
  • a deflection unit for deflecting the exposure electron beam and the detection electron beam to irradiate the exposure electron beam and the detection electron beam to the wafer and the mark unit, and detecting reflected electrons of the detection electron beam applied to the mark unit.
  • An electron detector that outputs a detection signal corresponding to the detected amount of reflected electrons; a position detector that detects an irradiation position of the detected electron beam based on the detection signal; It may include a calculation unit that calculates a correction value for correcting the irradiation position of the exposure electron beam based on the irradiation position, and a deflection control unit that controls the deflection unit based on the correction value.
  • the apparatus further includes a slit section for independently shaping the cross-sectional shape of each of the exposure electron beam and the detection electron beam, and an electron lens for independently focusing each of the exposure electron beam and the detection electron beam.
  • Irradiates one detected electron beam to one mark part and the electron detection part detects reflected electrons of one detected electron beam irradiated to the mark part, and corresponds to the amount of detected reflected electrons.
  • the detection signal is output, the position detection unit detects the irradiation position of one detected electron beam based on the detection signal, and the calculation unit calculates the deflection unit, the slit unit, and the detection unit based on the detected irradiation position.
  • a correction value for correcting a shift in the irradiation position of the exposure electron beam due to at least one translation of the electron lens unit may be calculated.
  • a second electron beam generator further comprising: a slit section for independently shaping the cross-sectional shape of each of the exposure electron beam and the detection electron beam; and an electron lens for independently focusing each of the exposure electron beam and the detection electron beam.
  • the three detecting electron beams To the three mark portions, the electron detection portion detects the reflected electrons of the three detected electron beams irradiated to the mark portion, and outputs a detection signal corresponding to the amount of the detected reflected electrons.
  • the position detection unit detects the irradiation positions of the three detected electron beams based on the detection signals, and the calculation unit determines at least one of a deflection unit, a slit unit, and an electron lens unit based on the detected irradiation positions. It is also possible to calculate a correction value for correcting a shift in the irradiation position of the exposure electron beam due to rotation, translation, and expansion and contraction in each of two orthogonal directions.
  • the position detection unit may include a timing generation unit that generates a timing for detecting the irradiation position of the detected electron beam.
  • the second electron beam generator may generate a detection electron beam and expose the electron beam.
  • an electron beam exposure apparatus for generating a plurality of exposure electron beams to irradiate a wafer and a detection electron beam to detect an irradiation position of the exposure electron beam
  • An electron beam correction method for correcting an irradiation position comprising: a detection step of detecting at least one of coordinates of an irradiation position of at least one detection electron beam; and at least one exposure electron beam based on the detected coordinates. Calculating a correction value for correcting the irradiation position of
  • the calculating step may include calculating a correction value for correcting the irradiation position of the detected electron beam based on the detected coordinates.
  • a wafer is exposed by an electron beam exposure apparatus that generates a plurality of exposure electron beams to irradiate the wafer and a detection electron beam to detect an irradiation position of the exposure electron beam.
  • An electron beam exposure method comprising: detecting at least one of coordinates of an irradiation position of at least one detection electron beam; and correcting the irradiation position of at least one exposure electron beam based on the detected coordinates.
  • the method includes a calculation step of calculating a correction value, and an exposure step of exposing a wafer with a plurality of exposure electron beams based on the correction value.
  • An electron beam exposure apparatus includes a wafer stage on which a wafer is placed, and a wafer stage.
  • the stage has a mark portion for detecting the irradiation position of the detection electron beam in a region other than the region where the wafer is mounted, and a mounting stage in which the wafer is mounted on the wafer stage; And moving the wafer to a predetermined position where the mark is irradiated.
  • the detecting step includes irradiating the mark portion with a detection electron beam to detect the coordinates of the irradiation position of the detection electron beam.
  • the electron beam exposure apparatus further includes a deflecting unit for deflecting the detected electron beam, and the mark unit is arranged at a pitch equal to or less than the deflection width of the detected electron beam by the deflecting unit over a moving range in which the wafer stage moves during the exposure processing.
  • the detection step may include detecting the coordinates of the irradiation position of the detection electron beam using one of the plurality of marks in accordance with the movement of the exposure position.
  • the coordinates of the irradiation position of the detection electron beam may be detected by using adjacent marks sequentially as the exposure position moves.
  • a semiconductor device is formed on a wafer by an electron beam exposure apparatus that generates a plurality of exposure electron beams to irradiate the wafer and a detection electron beam to detect the irradiation position of the exposure electron beam.
  • a method for manufacturing a semiconductor device comprising: detecting at least one of coordinates of an irradiation position of at least one detection electron beam; and irradiating at least one exposure electron beam based on the detected coordinates.
  • the method includes a calculation step of calculating a correction value for correcting a position, and an exposure step of exposing a wafer with a plurality of exposure electron beams based on the correction value.
  • FIG. 1 shows a configuration of an electron beam exposure apparatus 100 according to one embodiment of the present invention.
  • FIG. 2 shows a flowchart of the entire operation of the electron beam exposure apparatus 100.
  • FIG. 3 shows the electron beam exposure apparatus 100 in the irradiation position correction stage (S114). 3 shows a flowchart of the operation.
  • FIG. 4 shows an example of the first electron beam generator 10a, the second electron beam generator 10b, and the wafer stage 46.
  • FIG. 7 shows a flowchart of a semiconductor device manufacturing process.
  • FIG. 1 shows a configuration of an electron beam exposure apparatus 100 according to one embodiment of the present invention.
  • the electron beam exposure apparatus 100 includes an exposure unit 150 that performs a predetermined exposure process on the wafer 44 by an electron beam, and a control system 140 that controls the operation of each component included in the exposure unit 150. Prepare.
  • the exposure unit 150 generates an electron beam inside the housing 8, and forms an electron beam forming means 110 for shaping the cross-sectional shape of the electron beam as desired.
  • Irradiation switching means 1 12 for independently switching whether or not to irradiate each electron beam, and wafer projection system 1 for adjusting the direction and size of the image of the pattern transferred to wafer 44
  • An electron optical system including 14 is provided.
  • the exposure unit 150 includes a stage system including a wafer stage 46 on which a wafer 44 whose pattern is to be exposed is mounted, and a wafer stage driving unit 48 for driving the wafer stage 46.
  • a mark portion 56 is provided on the wafer stage 46 in a region other than the region where the wafer 44 is placed.
  • the exposure unit 150 is an electron detection device that detects secondary electrons, reflected electrons, and the like radiated from the mark unit 56 by the electron beam irradiated on the mark unit 56 provided on the wafer stage 46. A part 40 is provided. Electron detector 40 corresponds to the amount of detected reflected electrons The detected signal is output to the backscattered electron processing unit 94.
  • the electron beam shaping means 110 includes a first electron beam generator 10 a having a plurality of electron guns for generating an electron beam to be irradiated on the laser beam 44, and an irradiation position to be irradiated on the mark portion 56.
  • a second electron beam generator 10b having a plurality of electron guns for generating an electron beam for detection; and a plurality of openings for forming a cross-sectional shape of the irradiated electron beam by passing the electron beam.
  • the irradiation switching means 1 1 and 2 are configured to focus the plurality of electron beams independently, adjust the focus of the plurality of electron beams, and to independently deflect the plurality of electron beams.
  • a blanking electrode array 26 that independently switches whether or not each electron beam irradiates the wafer 44, and a plurality of openings through which the electron beams pass;
  • An electron beam shielding member 28 that shields the electron beam deflected by the blanking electrode array 26.
  • the blanking electrode array 26 may be a blanking, aperture, array 'device.
  • the wafer projection system 114 focuses a plurality of electron beams independently, and a third multi-axis electron lens 34 that reduces the irradiation diameter of the electron beam, and independently focuses a plurality of electron beams.
  • a fourth multi-axis electron lens 36 that adjusts the focus of the plurality of electron beams; and a deflecting unit 38 that deflects the plurality of electron beams to desired positions on the wafer 44 independently for each electron beam.
  • a fifth multi-axis electron lens 52 that functions as an objective lens for the wafer 44 and independently focuses a plurality of electron beams.
  • the control system 140 includes an overall control unit 130 and an individual control unit 120.
  • the individual control section 120 includes an electron beam control section 80, a multi-axis electron lens control section 82, a shaping deflection control section 84, a blanking electrode array control section 86, and a deflection control section 92. And a reflected electron processing unit 94 and a wafer stage control unit 96.
  • the general control unit 130 has a calculation unit 132, a memory 134, and a position detection unit 133.
  • the position detecting section 136 includes a timing generating section 138 for generating timing for detecting the irradiation position of the electron beam.
  • the general control unit 130 is, for example, a workstation, and performs general control of each control unit included in the individual control unit 120.
  • the electron beam controller 80 controls the first electron beam generator 10a and the second electron beam generator 10b.
  • the multi-axis electronic lens control unit 82 includes a first multi-axis electronic lens 16, a second multi-axis electronic lens 24, a third multi-axis electronic lens 34, a fourth multi-axis electronic lens 36, and a fifth multi-axis electronic lens 36.
  • the current supplied to the axial electron lens 52 is controlled.
  • the molding / deflecting control section 84 controls the first molding / deflecting section 18 and the second molding / deflecting section 20.
  • the blanking electrode array controller 86 controls the voltage applied to the deflection electrodes included in the blanking electrode array 26.
  • the deflection controller 92 controls the voltage applied to the deflection electrodes of the plurality of deflectors included in the deflection unit 38.
  • the backscattered electron processing unit 94 detects the amount of backscattered electrons based on the detection signal output from the electron detection unit 40, and notifies the general control unit 130.
  • Wafer stage control section 96 controls wafer stage driving section 4.8 to move wafer stage 46 to a predetermined position.
  • the detection electron beam generated by the second electron beam generation unit 10b is irradiated on the mark unit 56 provided on the wafer stage 46, and the exposure generated by the first electron beam generation unit 10a is performed.
  • the process of correcting the irradiation position of the photoelectric beam is performed.
  • a correction value is calculated which corrects a shift in the irradiation position of a plurality of exposure electron beams caused by deformation of each member of the electron beam exposure apparatus 100 due to deformation such as expansion, contraction, rotation, and parallel movement. I do.
  • the calculating unit 132 calculates a correction value for correcting the irradiation position of the electron beam other than the electron beam used for detecting the irradiation position, based on the coordinates of the irradiation position of the detected electron beam. .
  • the memory 1334 stores the irradiation position of the electron beam detected by the position detection unit 1336 and the irradiation position of another electron beam detected by the calculation unit 1332.
  • the calculation unit includes a first molded member 14 having a plurality of openings, a second molded member 22, a first multi-axis electronic lens 16, a second multi-axis electronic lens 24, and a third multi-member.
  • the wafer 44 is exposed using the correction value.
  • the operation of the electron beam exposure apparatus 100 in the exposure processing will be described.
  • the operation of irradiating the mark portion 56 with the electron beam is performed by irradiating the wafer 44 with the electron beam in the exposure processing. This operation may be substantially the same as the operation performed.
  • the first electron beam generator 10a generates a plurality of electron beams.
  • the first molded member 14 is provided with a plurality of electron beams generated by the first electron beam generator 10 a and applied to the first molded member 14. It is formed by passing through the opening of In another example, a plurality of electron beams may be generated by further including means for dividing the electron beam generated in the first electron beam generation unit 10a into a plurality of electron beams.
  • the first multi-axis electron lens 16 independently focuses the plurality of rectangularly shaped electron beams, and independently adjusts the focus of the electron beam on the second formed member 22 for each electron beam.
  • the first shaping deflection section 18 includes a plurality of rectangular shaped pieces formed on the first shaping member 14. The electron beams are independently deflected so as to irradiate a desired position on the second molded member.
  • the second shaping deflection unit 20 deflects the plurality of electron beams deflected by the first shaping deflection unit 18 in directions substantially perpendicular to the second shaping member 22, respectively. Illuminate. Then, the second forming member 22 including the plurality of openings having the rectangular shape is configured to irradiate the wafer 44 with the plurality of electron beams having the rectangular cross-sectional shape applied to the second forming member 22. Is further shaped into an electron beam having a cross-sectional shape of
  • the second multi-axis electron lens 24 independently focuses the plurality of electron beams and adjusts the focus of the electron beam on the blanking electrode array 26 independently. Then, the plurality of electron beams whose focus has been adjusted by the second multi-axis electron lens 24 pass through a plurality of apertures included in the blanking electrode array 26.
  • the electron beam not deflected by the blanking electrode array 26 passes through the third multi-axis electron lens 34. Then, the third multi-axis electron lens 34 reduces the electron beam diameter of the electron beam passing through the third multi-axis electron lens 34. The reduced electron beam passes through an opening included in the electron beam shielding member 28. Further, the electron beam shielding member 28 shields the electron beam deflected by the blanking electrode array 26. The electron beam that has passed through the electron beam shielding member 28 is incident on the fourth multi-axis electron lens 36. Then, the fourth multi-axis electron lens 36 independently focuses the incident electron beams, and adjusts the focus of the electron beams with respect to the deflection unit 38, respectively. The electron beam whose focus has been adjusted by the fourth multi-axis electron lens 36 is incident on the deflection unit 38.
  • the deflection control unit 92 controls a plurality of deflectors included in the deflection unit 38 based on the correction value calculated by the calculation unit 132, and controls each electron beam incident on the deflection unit 38.
  • the wafer 44 is independently deflected to a position to be irradiated on the wafer 44.
  • Fifth The axis electron lens 52 adjusts the focus of each electron beam passing through the fifth multi-axis electron lens 52 on the wafer 44.
  • Each electron beam having a cross-sectional shape to be irradiated on the wafer 44 is irradiated to a desired position to be irradiated on the wafer 44.
  • the wafer stage driving section 48 continuously moves the wafer stage 46 in a fixed direction based on an instruction from the wafer stage control section 96. Then, in accordance with the movement of the wafer 44, the cross-sectional shape of the electron beam is shaped into a shape that should be irradiated to the wafer 44, an aperture for passing the electron beam to be irradiated to the wafer 44 is determined, and further deflection is performed. By deflecting each electron beam to a position where the wafer 44 should be irradiated by the unit 38, a desired circuit pattern can be exposed on the wafer 44.
  • FIG. 2 is a flowchart showing the entire operation of the electron beam exposure apparatus 100 according to the present embodiment. This flowchart starts in S100.
  • stage position calibration stage S102
  • the stage position of the wafer stage 46 provided with the mark portion 56 is calibrated.
  • the irradiation position configuration stage S104
  • the irradiation positions of all the electron beams are detected by irradiating all the electron beams to the mark portion 56, and the respective irradiation positions of the individual electron beams are detected.
  • Perform calibration At the mounting stage (S106), the wafer 44 is mounted on the wafer stage 46.
  • the wafer 44 is moved to a predetermined position where the electron beam generated by the first electron beam generating unit is irradiated on the wafer 44.
  • the exposure processing stage (S110) a predetermined number of exposure processes are performed based on the calibration values determined in the stage position calibration stage (S102) and the irradiation position calibration stage (S104). I do.
  • S112 it is determined whether the desired number of exposure processes has been completed. If it is determined in S111 that the desired number of exposure processes have not been completed, the irradiation position correction stage (S114) detects a predetermined electron beam irradiation position and uses the electron beam for the exposure process. The beam irradiation position is corrected.
  • FIG. 3 is a flowchart of the operation of the electron beam exposure apparatus 100 in the irradiation position correction step (S114). It is preferable that the correction of the irradiation position of the electron beam in the irradiation position correction step (S114) is performed every time.
  • the wafer mounting stage (S106) the wafer 44 is mounted on the wafer stage 46.
  • the wafer moving step (S108) the wafer 44 is moved to a predetermined position where the electron beam generated by the first electron beam generator is irradiated on the wafer 44.
  • the process returns to the irradiation position detection step (S122), and the coordinates of the irradiation position of another electron beam for detection are detected.
  • the irradiation position storing step (S124) the coordinates of the detected irradiation position are stored. If it is determined in S126 that the coordinates of the required irradiation position of the electron beam have been detected, then in the correction value calculation step (S128), the irradiation positions of the electron beams other than the detection electron beam are determined based on the detected coordinates. Calculates the correction value for correcting.
  • the memory 134 of the general control unit 130 stores the positional relationship between the irradiation positions of the respective electron beams.
  • a correction value for correcting the irradiation position of another electron beam may be calculated using the positional relationship stored in the memory 134.
  • the irradiation position is detected in the irradiation position detection step (S122), and the predetermined position is not moved without moving the wafer stage 46.
  • step (S110) it is preferable to perform the exposure processing. Therefore, since the wafer stage 46 is not moved between the time when the irradiation position is corrected and the time when the exposure processing is started, the irradiation position of the electron beam can be accurately corrected in the exposure processing.
  • the overall control unit 130 performs the stage position calibration step (S102) and the irradiation position calibration step (S104). It is preferable that the irradiation position is detected by irradiating an electron beam for detection based on the calibration value determined in the step), and the correction value is calculated. Further, in the irradiation position correction step (S 114) of the predetermined times, which is the plurality of times, the general control unit 130 sets the correction value calculated in the previous irradiation position correction step (S 114) of the predetermined times.
  • the irradiation position is detected by irradiating a detection electron beam based on the calculation, and the correction value is calculated.
  • the general control unit 130 determines the last irradiation position detection step (S 114), which is a plurality of times after the irradiation position calibration step (S 104), the general control unit 130 determines the last irradiation position detection step ( The coordinates of the irradiation position of the electron beam similar to the electron beam whose irradiation position was detected in S122) are detected again, and in the correction value calculation step (S128), the previous irradiation position detection step (S Preferably, the correction value is calculated again based on the coordinates detected in step 122) and the coordinates detected in the predetermined irradiation position detection step (S122). At this time, the coordinates detected in the previous irradiation position detection step (S122) of the predetermined time are extracted from the memory 134 of the overall control unit 130. ⁇
  • FIG. 4 shows an example of the first electron beam generator 10a and the second electron beam generator 10b, and the wafer stage 46.
  • Figure 4 (a) shows 69 electron guns arranged 1 shows a first electron beam generator 10a and a second electron beam generator 10b in which two electron guns are arranged.
  • the wafer stage 46 has two mark portions 5 provided at positions corresponding to the electron guns of the second electron beam generator 10b shown in FIG. 4 (a). With 6.
  • the mark portion 56 is provided in an area other than the area where the wafer 44 is placed.
  • FIG. 5 shows an example of the mark section 56 in the present embodiment.
  • the mark section 56 has a plurality of marks 57 provided at a pitch equal to or smaller than the deflection width b of the electron beam by the deflection section 38.
  • the deflection width b is a width that can be irradiated with one electron beam only by deflection by the deflection unit 38 without moving the wafer stage 46.
  • the mark section 56 has a plurality of marks 57 provided over a movement range (aXa) in which the wafer stage 46 moves during the exposure processing.
  • the electron beam exposure apparatus 100 of the present embodiment uses a mark section 56 having a mark 57 arranged at a pitch equal to or less than the deflection width, and always uses one of the marks 57 to detect an electron for detection.
  • the irradiation position of the beam can be detected, and the irradiation position of the electron beam for exposure can be corrected.
  • FIG. 6 shows a first electron beam generator 10a and a second electron beam generator 10b in an irradiation position detection step (S122) and an exposure processing step (S110).
  • the positional relationship with the wafer stage 46 provided with the mark portion 56 is shown.
  • the second electron beam generation unit 10b When the wafer 44 is located at a position irradiated by the electron beam generated by the first electron beam generation unit 10a, the second electron beam generation unit 10b generates the mark by the generated electron beam. It is preferable to be provided at a position irradiated with 56.
  • the first electron beam generator 10a and the second electron beam generator 10b have a positional relationship as shown in FIG. After the correction, the exposure process can be performed to move the wafer stage 46.
  • the second electron beam generation unit 10b can generate an electron beam for position detection. . Therefore, even during the exposure processing, the general control unit 130 irradiates the mark unit 56 with the electron beam generated by the second electron beam generation unit 10b to detect the irradiation position, and calculates the calculation unit 13 2, the correction value can be calculated based on the detected irradiation position.
  • the electron detector 40 it is preferable to detect the irradiation position of the beam. Further, as the exposure position moves, the electron detector 40 always uses the adjacent marks 57 to always detect reflected electrons, and the position detector 1336 is generated by the timing generator 1338. The irradiation position of the electron beam generated by the second electron beam generation unit 10b is detected in accordance with the timing of the generation, and the calculation unit 1332 calculates the electron beam generated by the first electron beam generation unit 10a. A correction value for correcting the irradiation position may be calculated.
  • the member having a plurality of openings of the electron beam exposure apparatus 100 has uniform expansion and contraction, rotation, parallel movement, non-linear expansion and contraction in each of two orthogonal directions, and the like. As for 0, it is preferable to determine the number of irradiation positions of the electron beam to be detected according to the combination of the deformations to be considered. Specifically, the second electron beam generator 10 b irradiates each of the two electron beams to two mark sections 56, and the electron detector 40 irradiates the mark section 56.
  • the calculation unit 1332 performs, based on the detected irradiation positions, uniform uniform expansion and contraction of a member having a plurality of openings, A correction value for correcting a shift of the irradiation position of the electron beam generated by the first electron beam generating unit 10a due to the rotation and the parallel movement is calculated.
  • the second electron beam generator 10 b irradiates one mark section 56 with one electron beam, and the electron detector 40 generates reflected electrons of the electron beam irradiating the mark section 56. Based on the detected amount of reflected electrons, the irradiation position of one electron beam is detected, and the calculating unit 132 detects the irradiation position of the member having a plurality of openings based on the detected irradiation position. A correction value for correcting a shift in the irradiation position of the electron beam generated by the first electron beam generation unit 10a due to the entire uniform expansion and contraction and the rotation may be calculated.
  • the second electron beam generator 10 b irradiates one mark section 56 with one electron beam, and the electron detector 40 generates reflected electrons of the electron beam irradiating the mark section 56. Based on the detected amount of reflected electrons, the irradiation position of one electron beam is detected, and the calculating unit 132 detects the irradiation position of the member having a plurality of openings based on the detected irradiation position. A correction value for correcting a shift in the irradiation position of the electron beam generated by the first electron beam generation unit 10a due to the parallel movement may be calculated.
  • the second electron beam generator 10 b irradiates each of the three electron beams to the three mark portions 56, and the electron detector 40 reflects the electron beam radiated to the mark portion 56. Electrons are detected, and the irradiation positions of the three electron beams are detected based on the detected amount of reflected electrons.
  • the calculation unit 132 has a plurality of openings based on the detected irradiation positions. Even if a correction value for correcting a shift of the irradiation position of the electron beam generated by the first electron beam generation unit 10a due to the rotation, translation, and expansion and contraction in each of the two orthogonal directions is calculated. Good.
  • First molded member 14, Second molded member 22, First multi-axis electronic lens 16, Second multi-axis electronic lens 24, Third multi-axis electronic lens 34, Fourth multi-axis electronic lens 36, 5th multi-axis electron lens 52, 1st component The amount of variation AVx, AVy of the irradiation position of one electron beam due to expansion, contraction, rotation, and parallel movement of the shape deflection unit 18, the second shaping deflection unit 20, the deflection unit 38, etc.
  • Vx g * Cx + r * Cy + o x
  • AVx and AVy are displacements between the position to be irradiated by the electron beam and the irradiation position of the detected electron beam.
  • Cx and Cy are relative coordinates of the plurality of electron guns 104 and are known values.
  • G is an unknown expansion / contraction coefficient
  • r is an unknown rotation coefficient
  • ox and oy are unknown translation coefficients.
  • the deviation of the irradiation position of the electron beam, which is generated independently for each of the plurality of electron beams is sufficiently small as compared with the variation ⁇ and m Vy. Based on 1) and (2), a correction value for correcting the irradiation position of the electron beam is calculated.
  • Vx g * Cx + r * Cy '-' (3)
  • the irradiation position of one electron beam By detecting the irradiation position of one electron beam, two unknown values are obtained, and the irradiation positions of a plurality of electron beams other than the one electron beam can be calculated. Further, by detecting the irradiation position of one electron beam, a correction value for correcting a shift of the irradiation position of the electron beam due to expansion and contraction and rotation can be calculated. Similarly, by detecting the irradiation position of one electron beam, it is possible to calculate a correction value for correcting a shift of the irradiation position of the electron beam due to one of expansion, contraction, rotation, and translation.
  • the electron beam exposure apparatus 10 ° of the present embodiment by detecting the irradiation position of the detection electron beam, the irradiation of many electron beams other than the detection electron beam can be performed.
  • the position can be calculated. Therefore, it is possible to calculate a correction value for correcting the irradiation positions of many electron beams in a short time without detecting the irradiation positions of many electron beams.
  • FIG. 7 is a flowchart of a semiconductor device manufacturing process according to the present invention for manufacturing a semiconductor device from a wafer.
  • the present flowchart is started.
  • a photoresist is applied to the upper surface of the wafer.
  • the wafer is placed on a wafer stage 46 in an electron beam exposure apparatus 100 coated with a photoresist.
  • the wafer 44 includes the first multi-axis electron lens 16, the second multi-axis electron lens 24, the third multi-axis electron lens 34, and the fourth multi-axis electron lens 34.
  • a focus adjustment step for independently adjusting the focus of a plurality of electron beams by the lens 36, and whether or not to irradiate the wafer 44 with the plurality of electron beams by the blanking electrode array 26 The pattern image is exposed and transferred by irradiating the wafer 44 with an electron beam in an irradiation switching step of independently switching each time.
  • a conductive film or an insulating film is formed to form a wiring layer and an insulating layer between the wirings.
  • an electron beam correction method for correcting the irradiation position of an electron beam other than the predetermined electron beam by detecting the irradiation position of the predetermined electron beam.
  • An electron beam exposure apparatus can be provided.

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  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Electron Beam Exposure (AREA)

Abstract

La présente invention concerne un système d'exposition à des faisceaux d'électrons servant à exposer des plaquettes de semi-conducteur à des faisceaux d'électrons, ledit système comprenant une partie de plaquette montée sur plaquette, un premier dispositif de production de faisceaux d'électrons servant à produire des faisceaux d'électrons d'exposition destinés à être appliqués à des plaquettes de semi-conducteur, une unité de marquage se trouvant dans une zone différente de la zone montée sur plaquette de la partie de plaquette, et un second dispositif de production de faisceaux d'électrons servant à produire des faisceaux d'électrons de détection destinés à être appliqués à l'unité de marquage.
PCT/JP2001/009815 2000-11-15 2001-11-09 Systeme d'exposition a des faisceaux d'electrons, procede de correction de faisceaux d'electrons, procede d'exposition a des faisceaux d'electrons, et procede permettant de produire un element semi-conducteur WO2002041374A1 (fr)

Applications Claiming Priority (2)

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JP2000348472A JP4401557B2 (ja) 2000-11-15 2000-11-15 電子ビーム露光装置、電子ビーム補正方法、電子ビーム露光方法、及び半導体素子製造方法
JP2000-348472 2000-11-15

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WO2002041374A1 true WO2002041374A1 (fr) 2002-05-23

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JP (1) JP4401557B2 (fr)
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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012138519A (ja) * 2010-12-27 2012-07-19 Canon Inc 荷電粒子線描画装置及びデバイス製造方法
CN102741726A (zh) * 2009-11-18 2012-10-17 克列奥股份公司 曝光设备

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL2001369C2 (nl) * 2007-03-29 2010-06-14 Ims Nanofabrication Ag Werkwijze voor maskerloze deeltjesbundelbelichting.
KR20180123006A (ko) * 2016-03-14 2018-11-14 가부시키가이샤 니콘 노광 장치 및 노광 방법, 리소그래피 방법, 그리고 디바이스 제조 방법
US10984982B2 (en) 2017-03-16 2021-04-20 Nikon Corporation Charged particle beam optical apparatus, exposure apparatus, exposure method, control apparatus, control method, information generation apparatus, information generation method and device manufacturing method

Citations (4)

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Publication number Priority date Publication date Assignee Title
EP0518633A1 (fr) * 1991-06-10 1992-12-16 Fujitsu Limited Appareil pour l'inspection de motif et appareil à faisceau électronique
US5384463A (en) * 1991-06-10 1995-01-24 Fujisu Limited Pattern inspection apparatus and electron beam apparatus
JPH08191042A (ja) * 1995-01-11 1996-07-23 Hitachi Ltd 電子線描画装置およびその調整方法
JPH11233418A (ja) * 1998-02-18 1999-08-27 Jeol Ltd 電子ビーム描画装置

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0518633A1 (fr) * 1991-06-10 1992-12-16 Fujitsu Limited Appareil pour l'inspection de motif et appareil à faisceau électronique
US5384463A (en) * 1991-06-10 1995-01-24 Fujisu Limited Pattern inspection apparatus and electron beam apparatus
JPH08191042A (ja) * 1995-01-11 1996-07-23 Hitachi Ltd 電子線描画装置およびその調整方法
JPH11233418A (ja) * 1998-02-18 1999-08-27 Jeol Ltd 電子ビーム描画装置

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102741726A (zh) * 2009-11-18 2012-10-17 克列奥股份公司 曝光设备
JP2012138519A (ja) * 2010-12-27 2012-07-19 Canon Inc 荷電粒子線描画装置及びデバイス製造方法

Also Published As

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TW507271B (en) 2002-10-21
JP2002151399A (ja) 2002-05-24
JP4401557B2 (ja) 2010-01-20

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