WO2002021168A1 - Filtre optique a film multicouche et dispositif de communications a multiplexage en longueurs d'onde - Google Patents

Filtre optique a film multicouche et dispositif de communications a multiplexage en longueurs d'onde Download PDF

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Publication number
WO2002021168A1
WO2002021168A1 PCT/JP2001/007324 JP0107324W WO0221168A1 WO 2002021168 A1 WO2002021168 A1 WO 2002021168A1 JP 0107324 W JP0107324 W JP 0107324W WO 0221168 A1 WO0221168 A1 WO 0221168A1
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WIPO (PCT)
Prior art keywords
optical
multilayer film
refractive
film
optical multilayer
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PCT/JP2001/007324
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English (en)
Japanese (ja)
Inventor
Takayuki Akiyama
Mayumi Hagiwara
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Nikon Corporation
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Publication of WO2002021168A1 publication Critical patent/WO2002021168A1/fr

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    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/20—Filters
    • G02B5/28—Interference filters
    • G02B5/285—Interference filters comprising deposited thin solid films
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24—Coupling light guides
    • G02B6/26—Optical coupling means
    • G02B6/28—Optical coupling means having data bus means, i.e. plural waveguides interconnected and providing an inherently bidirectional system by mixing and splitting signals
    • G02B6/293—Optical coupling means having data bus means, i.e. plural waveguides interconnected and providing an inherently bidirectional system by mixing and splitting signals with wavelength selective means
    • G02B6/29346—Optical coupling means having data bus means, i.e. plural waveguides interconnected and providing an inherently bidirectional system by mixing and splitting signals with wavelength selective means operating by wave or beam interference
    • G02B6/29361—Interference filters, e.g. multilayer coatings, thin film filters, dichroic splitters or mirrors based on multilayers, WDM filters

Definitions

  • the present invention relates to an optical multilayer film formed by alternately laminating a high-refractive-index material layer and a low-refractive-index material layer, and used for optical communication using light in the near-infrared region, and wavelength division using the same.
  • the present invention relates to a multiplex optical communication device. Background art
  • WDM communication system Wave-length Division Multiplexing communication system
  • WDM communication system it is necessary to divide the light in the near-infrared region used for communication into a plurality of fine wavelength regions or to combine the light in the plurality of wavelength regions. Therefore, a large amount of optical multilayer film is required.
  • Such an optical multilayer filter is disclosed in, for example, Japanese Patent Application Laid-Open No. 7-198935, and is formed by alternately stacking high-refractive-index material layers and low-refractive-index material layers.
  • This optical multilayer filter has a very complicated configuration in which dozens of layers are formed with different thicknesses.
  • the required specifications regarding the wavelength selection performance as a filter are strict, and therefore very strict film thickness control is required.
  • Film formation for forming such a multilayer film The vacuum evaporation method has been well known as a conventional method. However, when a film is formed using the vacuum evaporation method, the structure of the film becomes pillar-shaped. Shift in the selected wavelength region).
  • an alternating layer film of titanium oxide and silicon dioxide and an alternating layer film of tantalum oxide and silicon dioxide are known as a substance used for an optical multilayer film in the near infrared region.
  • the ion beam sputtering method or the RF sputtering method in which a relatively stable evaporation distribution or sputtering distribution can be easily obtained, may be adopted as the film forming method (by the way, ion beam assisted vapor deposition and In the plasma ion-assisted evaporation method, the dissolution of the sample (evening target) in electron beam evaporation tends to be unstable, and the evaporation distribution is likely to fluctuate.
  • the film forming operation is difficult and the production cost is high.
  • the ion beam sputtering method and the RF sputtering method can both form relatively stable films.However, the film forming speed is higher than that of the ion beam assisted deposition method and the plasma ion assisted deposition method. However, there is a problem that production efficiency is low and production cost is high.
  • optical multilayer films especially optical multilayer films used in optical communications.
  • Lube is used in a variety of environments, must transmit light with low loss over long distances, and must have stable optical properties. Therefore, a light-absorbing and light-scattering property is required, and a dense film is required.
  • the refractive index is stable irrespective of the film forming conditions, and the optical multilayer film has stable optical characteristics. I need an evening.
  • optical communication filters are used where light is split or combined or light is amplified. And it is necessary to provide many such places everywhere in the optical communication network. Therefore, when forming an optical communication network, a large number of optical multilayer film filters having desired conditions are required, and it is possible to obtain a large number of optical communication filters with high production efficiency. Is desired.
  • the present invention has been made in view of the above circumstances, and provides an optical multilayer filter having a small total film thickness and a small number of layers, and which does not impair the performance.
  • the purpose is to:
  • Another object of the present invention is to provide an optical multilayer film which is manufactured using a film forming method capable of forming a film at a high film forming rate and stably, and thus has a high production efficiency and a low production cost. I do.
  • the present invention provides an optical device having a small total film thickness and a small number of film layers. It is another object of the present invention to provide a wavelength division multiplexing optical communication device using an optical multilayer film as a filter, which is a multilayer film and does not impair the performance.
  • a first invention for achieving the above object is an optical multilayer film filter configured by alternately stacking high-refractive-index material layers and low-refractive-index material layers, and used for optical communication using light in the near-infrared region.
  • a is made from the high refractive index material is niobium pentoxide (N b 2 0 5), wherein the low refractive index material is silicon dioxide (S i 0 2) Tona optical multilayer film fill characterized Rukoto evening It is.
  • the optical multilayer film composed of niobium pentoxide and silicon dioxide has low absorption and low scattering characteristics and a stable refractive index. It is suitable for film filling.
  • the optical multilayer film filter composed of niobium pentoxide and silicon dioxide is used particularly for wavelength division multiplexing optical communication.
  • the wavelength selection performance of the optical multilayer filter used for this wavelength division multiplexing optical communication is extremely severe. Therefore, the number of layers formed to satisfy the performance naturally increases.
  • niobium pentoxide and silicon dioxide have characteristics of high refractive index stability, low absorption and low scattering, and have a large difference in refractive index. It is suitable as an optical multilayer film used for wavelength division multiplexing optical communication.
  • the high refractive index material layer and the low refractive index material layer are -It is desirable to form a film alternately by the dopant method.
  • the AC dual force source sputtering method does not have the problem that the evaporation of the sample (target) is unstable and the evaporation rate or the sputtering distribution fluctuates as in the ion beam assisted vapor deposition method and the plasma ion assisted vapor deposition method. Stable film formation is possible, and it is possible to reduce the production cost by automating the film formation work.
  • the film formation rate of the AC dual force source sputtering method is almost the same as that of the ion beam assisted deposition method and the plasma ion assisted deposition method, and the production efficiency is higher than that of the ion beam sputtering method and the RF sputtering method. Is obtained.
  • a second invention for achieving the above object is an optical multilayer film formed by alternately stacking high-refractive-index oxide compound layers and low-refractive-index oxide compound layers, and used for optical communication by light in the near-infrared region.
  • a film is formed by using the method, it is possible to form a film stably without a change in the film formation, and it is possible to automate the film formation. Further, the film formation rate is equivalent to that of the ion beam assisted vapor deposition method and the plasma ion assisted vapor deposition method. Efficiency can be improved and production costs can be reduced.
  • AC Deyuarukaso one Dosupadzu evening method deposition method using uses tantalum pentoxide (T a 2 0 5) as a high refractive index oxide compounds, silicon dioxide as the low refractive index oxide compound (S i 0 It is preferable to apply to optical multilayer film for optical communication using 2 ). Even though the optical multilayer film made of tantalum pentoxide and silicon dioxide has a smaller refractive index difference than the refractive index difference between niobium pentoxide and silicon dioxide, the number of layers is equal to that of niobium pentoxide. Although it is larger than the optical multi-layer film of silicon dioxide, film formation by the method of the present invention enables stable film formation without film formation fluctuation.
  • optical multilayer film for optical communication. Even when compared with the conventional method, when a multilayer film of tantalum pentoxide and silicon dioxide is formed so as to obtain desired wavelength characteristics, a reduction in the film formation time can be expected.
  • Such an optical multilayer film is particularly suitable for an optical multilayer film for wavelength division multiplex communication in which the number of layers is large.
  • a third invention for achieving the above object is a wavelength division multiplexing optical communication device using the optical multilayer film filter of the present invention as a filter.
  • this wavelength division multiplexing optical communication device uses the optical multilayer film filter of the present invention as a filter, it has high refractive index stability, low absorption, low scattering, and low cost as a component. It can be used, has improved performance, and can be inexpensive.
  • FIG. 1 is a schematic diagram showing the configuration of a WDM communication system configured using the optical multilayer film filter of the present invention.
  • FIG. 2 is a schematic diagram showing the configuration of the multiplexer that constitutes the system shown in FIG.
  • FIG. 3 is a graph showing light transmission characteristics of an optical filter used in the multiplexer.
  • FIG. 4 is a schematic diagram showing a configuration of an amplifier constituting the system shown in FIG.
  • FIG. 5 is a graph showing light transmission characteristics of an optical filter used in the amplifier.
  • FIG. 6 is a graph showing light transmission characteristics of an optical filter (optical multilayer filter) according to the present invention, which can be used in the multiplexer.
  • FIG. 7 is a graph showing light transmission characteristics of an optical filter (optical multilayer film) according to the present invention, which can be used for the amplifier.
  • FIG. 8 is a schematic diagram showing a configuration of an AC dual cathode sputtering device used for manufacturing an optical multilayer film according to the present invention.
  • This system it it a different wavelength multiple records one
  • the first emitting device L 1 for outputting an optical signal, L 2, L 3 3 ⁇ ⁇ ⁇ , L n and these lasers one emitter or al the emitted signal 'A multiplexer 1 for combining the light, a transmission optical fiber 2 for transmitting the signal light that is combined and emitted by the multiplexer 1, and a transmission optical fiber
  • a plurality of amplifiers 3 (for example, composed of optical fiber amplifiers) arranged at predetermined intervals (for example, 80 km intervals) on the optical fiber 2 and amplifying the transmission optical signal, and transmitted through the transmission optical fiber 2.
  • a splitter 5 for splitting the obtained optical signal into a plurality of optical signals of different wavelengths, and a plurality of detectors D l, D 2, D 3,... For detecting each optical signal split by the splitter 5. ⁇ ⁇ ⁇ Dn.
  • optical signals are output from the respective laser emitters L 1, L 2, L 3,..., L n, and these are combined by the multiplexer 1 to be combined.
  • the signal is transmitted by the transmission optical fiber 2 as a group of optical signals.
  • each optical signal is divided into the corresponding detectors D l, D 2, D 3, ⁇ ⁇ ⁇ ⁇ Detected by Dn.
  • FIG. 2 is a diagram showing a configuration of the multiplexer 1.
  • This multiplexer 1 is composed of a plurality of optical filters FL 1, FL 2 3 FL 3,---which are arranged to face each of the laser emitters LI, L 2, L 3,. -, .FL n.
  • a laser signal light having a wavelength ⁇ 1 is emitted from the laser light emitter L1, and a light having a desired wavelength width (for example, a narrow wavelength width of about 1 nm) is selected by an optical filter FL1.
  • the light is emitted to the fiber OF1.
  • the optical filter FL1 may not be provided.
  • a laser signal light having a wavelength ⁇ 2 is emitted from the laser light emitter L 2 and enters the front side of the optical filter FL 2.
  • the optical fiber OF1 is guided to the rear surface side of the optical filter FL2, and the laser signal light of the wavelength 1 is emitted toward the front surface of the optical filter FL2.
  • the laser FL2 is composed of an optical multilayer film that transmits light of wavelength ⁇ 2 but reflects light of other wavelengths.
  • the signal light of wavelength 2 from 2 is transmitted as it is, and the light of wavelength 1 from the optical fiber 0 F 1 irradiated on the rear side is reflected.
  • An optical fiber OF2 is disposed opposite to the rear surface of the optical filter FL2, and the signal light transmitted through the optical filter FL2 and the signal light emitted from the optical fiber 0F1 and output from the optical fiber FL2 as described above.
  • the signal light reflected by the evening FL 2 is incident on the optical filter FL 2.
  • the signal light obtained by combining the signal lights of the wavelengths 1 and 2 enters the optical fiber 0F2.
  • the optical filters FL 3 ⁇ -FL n are arranged in opposition to the respective laser light emitters L 3 ⁇ L n, and the optical filters FL 3 ⁇
  • the combined signal light of E1 and E2 and the signal light of E3 are incident on different surfaces, and the signal light of E1, E2, and E3 are synthesized and incident on the next optical fiber 0F3.
  • the optical filter FL n receives the combined signal light of person 1, person 2, person 3 ⁇ ⁇ -l and the signal light of person ⁇ . , ⁇ 3 ⁇
  • the combined signal light of person ⁇ enters optical fiber 0 F n.
  • the optical fiber 0 Fn is connected to the transmission optical fiber 2, and the signal light thus combined is transmitted via the transmission optical fiber 2.
  • each of the optical filters FL 1, FL 2, FL 3... FLn respectively transmits only the corresponding narrow wavelength band optical signal as shown in FIG.
  • the performance of reflecting a signal is required (that is, the performance as a narrow-band interference filter is required), and an optical multilayer filter is used to satisfy such a requirement.
  • the demultiplexer 5 may be configured to perform the reverse operation of the demultiplexer 1, and the demultiplexer 5 In this case, the same plurality of optical multilayer films as used in the multiplexer 1 are used.
  • the optical signal transmitted through the transmission optical fiber 2 includes a signal in a wavelength band of 125 to 5 called C-band: L565 nm, and an L-band signal. It is known to use signals in the wavelength band of 1565 to 1590 nm, so that one transmission optical fiber 2 is formed by mixing C-band and L-band optical signals. Transmission over the Internet.
  • an amplifier 3 disposed in the middle of the transmission optical fiber 2 and amplifying the signal amplifies the C-band and L-band optical signals by an amplifier suitable for the amplification. Is required.
  • the amplifier 3 is configured as shown in FIG. 4, for example, and here, optical filters 31 and 32 composed of optical multilayer films are used.
  • the optical filters 31 and 32 are filters having light transmission characteristics as shown in FIG.
  • the optical signal mixed with the C-band and L-band optical signals transmitted through the transmission optical fino 2 from the left side in FIG. 4 is applied to the optical filter 31 and only the C-band optical signal is applied to the optical filter.
  • the light After passing through the evening filter 31 and being amplified at a predetermined amplification rate by the first fiber amplifier 35, the light is irradiated onto the optical filter 32 and transmitted therethrough.
  • the L-band optical signal is reflected by the optical filter 31, enters the second fiber amplifier 36, is increased there by a predetermined amplification factor, and is then irradiated on the rear side of the optical filter 32. Reflected.
  • the C-band and L-band optical signals divided by the optical filter 31 and amplified by the first and second fiber amplifiers 35 and 36 at a predetermined amplification factor are respectively converted to the optical filter 31. And transmitted through the optical transmission fiber 2 on the right side in FIG.
  • the gain of the C-band optical signal is larger than that of the L-band optical signal.
  • the optical filters 31 and 32 are required to function as edge filters.
  • optical filters FL used in the multiplexer 1 and the demultiplexer 5 will be described.
  • the difference between adjacent wavelengths is about 3.2 nm to 0.8 nm.
  • the difference between the center wavelength of the design data and the center wavelength of the manufactured optical multilayer film and the difference in the width of the selected wavelength band must be sufficiently reduced.
  • an optical multilayer film having a stable refractive index and stable optical characteristics is required regardless of the film forming conditions.
  • the present inventors have developed an optical multilayer film composed of tantalum pentoxide and silicon dioxide, an optical multilayer film composed of titanium oxide and silicon dioxide, and an optical multilayer film composed of niobium pentoxide and silicon dioxide.
  • the performance of the three types of phil evenings was compared and examined.
  • the high refractive index using a tantalum pentoxide (Ta 2 0 5) as the material layer, and a case of using silicon dioxide as a low refractive index material layer (Si0 2), ⁇ Oriritsu titanium oxide material layer (Ti0 2) layer the use, for the case of using the dioxide Kei containing as a low refractive index material layer (Si0 2), making the evening optical multilayer film fill using an ion beam Assist deposition and plasma ion Assist deposition, the performance ( Film density, light absorption, light scattering, refractive index stability)
  • the optical multilayer film with the combination of tantalum pentoxide and silicon dioxide satisfies the desired performance, but the optical multilayer film with the combination of titanium oxide and silicon dioxide has the light scattering and refractive index stability. It turned out that the specifications were not satisfied. It was also found that the optical multilayer film of niobium pentoxide and silicon dioxide had the same performance as the optical multilayer film of tantalum pentoxide and silicon dioxide.
  • the optical films applicable to the multiplexer 1 We decided to manufacture FL.
  • tantalum pentoxide is used as the high-refractive index material layer and silicon dioxide is used as the low-refractive index material layer, and these layers are alternately formed by ion beam assisted vapor deposition or plasma ion assisted vapor deposition.
  • An optical filter FL manufactured by stacking and usable in the multiplexer 1 was manufactured. In this optical filter FL, a filter having desired characteristics was obtained by alternately stacking a total of 96 tantalum pentoxide layers and silicon dioxide layers, and the total film thickness was 25.1 / m. .
  • optical filter formed by alternately laminating a high-refractive-index material layer made of niobium pentoxide and a low-refractive-index material layer made of silicon dioxide is appropriate.
  • the prototype optical filter is composed of a total of 84 alternately laminated niobium pentoxide layers and silicon dioxide layers, and has a total film thickness of 20.9 / m. It was found that it had the performance required for optical filters (density of the film, light absorption, light scattering, and refractive index stability).
  • the light transmittance characteristics (light transmittance characteristics with respect to wavelength) of this optical filter are shown by broken lines in FIG. 6, and the wavelength band in the range of 13 dB or more, where the light transmittance is 50% or more, is shown. Is almost lnm.
  • the refractive index of niobium pentoxide is 2.22 with respect to the refractive index of tantalum pentoxide of 2.08. Even if the thickness was reduced by more than 10% compared to the case of tantalum pentoxide, and the total film thickness was reduced by slightly less than 20%, the same wavelength characteristics could be obtained as shown in FIG.
  • niobium pentoxide and silicon dioxide are used in an optical multilayer film used for optical communication. It is possible to mass-produce it in a short time by using it, and it has been found that it is a very suitable film configuration for optical communication parts that require a very large number of optical multilayer films. .
  • FIG. 8 shows a schematic configuration diagram of an AC dual-cathode sputter device to which the AC dual-cathode sputtering method used in the present embodiment is applied.
  • a substrate holder 11 is provided in a vacuum chamber 10 and rotates around a rotation axis 12.
  • the substrate holder 11 has a disk shape.
  • a substrate 13 for forming a film on the surface is concentric.
  • a module is mounted at one place where the board 13 is to be mounted.
  • a sputtering device 16 is provided below the vacuum chamber 10, from which particles of the components constituting the film fly out and strike the substrate 13 and the surface of the monitor 1 substrate to form a film.
  • the excitation members 63 are provided below the spa sources 61a and 61b and the spa sources 61a and 61b, respectively.
  • a high-frequency power source 62 oscillating at 40 KHz is connected to both the spa power source 61 a and 61 b, and the voltage output from the high-frequency power source 62 is a, 6 1 b.
  • discharge occurs between the vacuum chamber 110 and the sputter sources 61a and 61b.
  • the sputter is performed from the sputter source having a negative potential, but there are a plurality of the sputter sources, and the electrodes thereof are opposite to each other. Is connected to the high-frequency power source 62 as described above, one of them always has a negative potential. Therefore, since the AC dual-source device has a spa source which is set to be in a condition of being constantly sputtered, the deposition rate becomes extremely high.
  • windows 14 are provided on the upper and lower surfaces of a part of the vacuum chamber 10 of the AC dual-cathode sputtering device in the present embodiment, and light emitted from the light emitter 15 is The light passes through the substrate 13 or the monitor substrate and is received by the receiver 17 so that the film thickness can be measured.
  • the film formation of the optical element using the apparatus as shown in FIG. 8 is performed as follows. First, the material of the film, the number of layers, and the thickness of each layer are determined by calculation so as to obtain predetermined optical characteristics (reflectance, transmittance, phase characteristics, and the like). When the design is completed in this way, first, the first layer is formed. If the film thickness can be measured without stopping the rotation of the substrate holder 111, the film thickness is measured each time the substrate of the monitor passes the positions of the light emitter 15 and the light receiver 17. Of course, the approximate time required to form the predetermined film thickness is obtained by calculation, and the film thickness may be measured after a time close to this time has elapsed.
  • the film formation is continued while measuring the film thickness in this way, and when the film thickness falls within the tolerance, the film formation of the first layer is completed. Then, the material used for the sputtering is changed, and the second layer is formed in the same manner. Hereinafter, this is repeated to form a film up to the final film.
  • Such an AC dual cathode sputter method has the advantage that the fluctuation of the sputter distribution in the film forming process is small and stable, so that the film forming operation can be automated and the film forming operation is simplified. Having.
  • the multiplexer with one the available optical multilayer film fill evening FL, tantalum pentoxide as the high refractive index material layer (T a 2 0 5), silicon dioxide as the low refractive index material layer (S i0 2) was used to create the evening optical film by performing the film deposition by the AC dual force Sword sputtering evening method.
  • the fluctuation of the sputtering distribution in the film forming process is small and stable, so the film forming operation is automated. And the film formation work was simplified.
  • the number of laminated films was 96, and the total film thickness was 25.1 / m.
  • the light transmittance characteristics (light transmittance characteristics with respect to wavelength) of the optical filter thus produced are shown by the solid line in FIG. 6, and in this case, the light transmittance is more than 50%.
  • the wavelength band in the above range is almost lnm.
  • the present applicant conducted similar research on the optical filters 31 and 32 used for the amplifier 3, and as a result, performed a film forming operation using an AC dual cathode (Nb 2 0 5) a high refractive index material layer and the optical film is made by a product layer alternately and a low refractive index material layer made of silicon dioxide (Si0 2) consisting of evening have found out that it is appropriate.
  • This optical filter is made of, for example, a total of 82 alternately laminated niobium pentoxide layers and silicon dioxide layers, and has a total film thickness of 20.6 ⁇ m. It has the required performance (density of the film, light absorption, light scattering, refractive index stability, wavelength selectivity).
  • the light transmission characteristics (light transmission characteristics with respect to wavelength) of the optical filter are shown by broken lines in FIG. As can be seen from this figure, the light transmittance is 50% or more.
  • the wavelength band in the range of 3 dB or more is 1526 to 1563 nm, and almost only the C-band optical signal is transmitted.
  • optical filters 3 and 32 for 3 can be used sufficiently.
  • the Applicant further tantalum pentoxide as the high refractive index material layer (Ta 2 0 5), using a silicon dioxide (Si0 2) as a low refractive index material layer, film was formed by AC dual cathode sputtering evening Method Made an optical film.
  • the performance required for the optical filter for the amplifier 3 density of the film, light absorption, light scattering, and refractive index stability
  • the number of laminated films is 92, and the total film thickness is It was 22.9 ⁇ 111.
  • the light transmission characteristics (light transmittance characteristics with respect to wavelength) of the optical filter thus produced are shown by the solid line in FIG.
  • the wavelength band in the range of 13 dB or more which gives a light transmittance of 50% or more, is from 1526 to 1563 nm, and almost only the C-band optical signal is transmitted.
  • this optical filter can be sufficiently used as the optical filters 31 and 32 for the amplifier 3.
  • the optical multilayer film for optical communication is limited to the wavelength selective filter used for the multiplexer and the demultiplexer described above and the wavelength selective filter used for the amplifier 3. Not something.
  • there are various types such as an optical multi-layer filter used as an optical communication component, and a gain flattening filter that makes the optical signal output from the amplifier 3 have the same intensity at any wavelength.
  • All of these optical multilayers require very strict wavelength characteristics, and require a very large number per line.
  • the transmission gain performance that is inverted with respect to the amplification gain for the wavelength of the fiber amplifier using the gain flattening filter is required, the wavelength characteristics become complicated, and a very large number of layers is required.
  • the gain flattening filter also needs the same refractive index stability, light absorption, light scattering characteristics, and environmental resistance as the wavelength selective filter described above. It is desirable to form a gain-flattening filter with an alternating multilayer of niobium pentoxide and silicon dioxide to be reduced.
  • the optical multilayer film of the present invention can be widely used for optical communication devices using near-infrared light, and It is suitable for use in a communication device. Further, the wavelength division multiplexing optical communication device of the present invention can be used as a communication device having a large communication capacity.

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Optical Filters (AREA)

Abstract

L'invention concerne un filtre optique à film multicouche formé par stratification faisant alterner une par une des couches de matériau à indice de réfraction élevé et des couches de matériau à indice de réfraction faible, utilisé dans des communications optiques, et caractérisé en ce que ledit matériau à indice de réfraction élevée comprend du pentoxyde de niobium (Nb2O5) et en ce que ledit matériau à indice de réfraction faible comprend du dioxyde de silicium (SiO2). Ce filtre présente une épaisseur totale réduite, ainsi qu'un nombre de couches constitutives réduites sans préjudice pour ses capacités de performance en tant que filtre optique à film multicouche utilisé dans les communications optiques.
PCT/JP2001/007324 2000-09-05 2001-08-28 Filtre optique a film multicouche et dispositif de communications a multiplexage en longueurs d'onde WO2002021168A1 (fr)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2003096496A1 (fr) * 2002-05-09 2003-11-20 Nikon Corporation Module de filtre optique et amplificateur lumineux utilisant ce module

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Publication number Priority date Publication date Assignee Title
US5583683A (en) * 1995-06-15 1996-12-10 Optical Corporation Of America Optical multiplexing device
JPH1129860A (ja) * 1997-07-14 1999-02-02 Bridgestone Corp スパッタ膜の作製方法及び対向ターゲット式スパッタリング装置
JPH11229131A (ja) * 1998-02-17 1999-08-24 Nikon Corp 成膜用スパッタ装置
JPH11242115A (ja) * 1998-02-26 1999-09-07 Fujitsu Ltd 温度依存性のない光素子
JPH11326633A (ja) * 1998-05-18 1999-11-26 Japan Aviation Electronics Ind Ltd 波長選択素子およびこれを使用した光学装置

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5583683A (en) * 1995-06-15 1996-12-10 Optical Corporation Of America Optical multiplexing device
JPH1129860A (ja) * 1997-07-14 1999-02-02 Bridgestone Corp スパッタ膜の作製方法及び対向ターゲット式スパッタリング装置
JPH11229131A (ja) * 1998-02-17 1999-08-24 Nikon Corp 成膜用スパッタ装置
JPH11242115A (ja) * 1998-02-26 1999-09-07 Fujitsu Ltd 温度依存性のない光素子
JPH11326633A (ja) * 1998-05-18 1999-11-26 Japan Aviation Electronics Ind Ltd 波長選択素子およびこれを使用した光学装置

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2003096496A1 (fr) * 2002-05-09 2003-11-20 Nikon Corporation Module de filtre optique et amplificateur lumineux utilisant ce module

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