WO2002015284A8 - Cellule solaire et son procede de fabrication - Google Patents
Cellule solaire et son procede de fabricationInfo
- Publication number
- WO2002015284A8 WO2002015284A8 PCT/JP2001/006830 JP0106830W WO0215284A8 WO 2002015284 A8 WO2002015284 A8 WO 2002015284A8 JP 0106830 W JP0106830 W JP 0106830W WO 0215284 A8 WO0215284 A8 WO 0215284A8
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- solar cell
- single crystal
- silicon single
- crystal wafer
- less
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title abstract 2
- 238000000034 method Methods 0.000 title 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 7
- 239000013078 crystal Substances 0.000 abstract 7
- 229910052710 silicon Inorganic materials 0.000 abstract 7
- 239000010703 silicon Substances 0.000 abstract 7
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 abstract 2
- 229910052760 oxygen Inorganic materials 0.000 abstract 2
- 239000001301 oxygen Substances 0.000 abstract 2
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/028—Inorganic materials including, apart from doping material or other impurities, only elements of Group IV of the Periodic Table
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Inorganic Chemistry (AREA)
- Life Sciences & Earth Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Sustainable Development (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Photovoltaic Devices (AREA)
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
AU2001277718A AU2001277718B2 (en) | 2000-08-15 | 2001-08-08 | Method for manufacturing solar cell and solar cell |
US10/344,398 US6830740B2 (en) | 2000-08-15 | 2001-08-08 | Method for producing solar cell and solar cell |
AU7771801A AU7771801A (en) | 2000-08-15 | 2001-08-08 | Method for manufacturing solar cell and solar cell |
KR1020037002089A KR100870526B1 (ko) | 2000-08-15 | 2001-08-08 | 태양전지셀의 제조방법 및 태양전지셀 |
EP01955600A EP1313150A4 (en) | 2000-08-15 | 2001-08-08 | SOLAR CELL AND MANUFACTURING PROCESS |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2000-246306 | 2000-08-15 | ||
JP2000246306A JP2002057351A (ja) | 2000-08-15 | 2000-08-15 | 太陽電池セルの製造方法および太陽電池セル |
Publications (2)
Publication Number | Publication Date |
---|---|
WO2002015284A1 WO2002015284A1 (fr) | 2002-02-21 |
WO2002015284A8 true WO2002015284A8 (fr) | 2002-07-18 |
Family
ID=18736647
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2001/006830 WO2002015284A1 (fr) | 2000-08-15 | 2001-08-08 | Cellule solaire et son procede de fabrication |
Country Status (7)
Country | Link |
---|---|
US (1) | US6830740B2 (ja) |
EP (1) | EP1313150A4 (ja) |
JP (1) | JP2002057351A (ja) |
KR (1) | KR100870526B1 (ja) |
AU (2) | AU2001277718B2 (ja) |
TW (1) | TWI295856B (ja) |
WO (1) | WO2002015284A1 (ja) |
Families Citing this family (22)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002076400A (ja) * | 2000-08-30 | 2002-03-15 | Shin Etsu Handotai Co Ltd | 太陽電池セルおよび太陽電池セルの製造方法 |
US7759158B2 (en) * | 2005-03-22 | 2010-07-20 | Applied Materials, Inc. | Scalable photovoltaic cell and solar panel manufacturing with improved wiring |
JP2009515369A (ja) * | 2005-11-07 | 2009-04-09 | アプライド マテリアルズ インコーポレイテッド | 光電池接触部及び配線の形成 |
US20080057220A1 (en) * | 2006-01-31 | 2008-03-06 | Robert Bachrach | Silicon photovoltaic cell junction formed from thin film doping source |
US7749869B2 (en) * | 2008-08-05 | 2010-07-06 | International Business Machines Corporation | Crystalline silicon substrates with improved minority carrier lifetime including a method of annealing and removing SiOx precipitates and getterning sites |
TWI382544B (zh) * | 2008-09-16 | 2013-01-11 | Nexpower Technology Corp | 太陽能光學模組 |
US7858427B2 (en) * | 2009-03-03 | 2010-12-28 | Applied Materials, Inc. | Crystalline silicon solar cells on low purity substrate |
TWI472049B (zh) * | 2009-12-14 | 2015-02-01 | Ind Tech Res Inst | 太陽能電池的製造方法 |
JP5338702B2 (ja) * | 2010-02-12 | 2013-11-13 | 信越化学工業株式会社 | 太陽電池の製造方法 |
US20130089944A1 (en) * | 2010-06-11 | 2013-04-11 | Amtech Systems, Inc. | Solar cell silicon wafer process |
JP5934218B2 (ja) | 2010-09-03 | 2016-06-15 | ジーテイーエイテイー・アイピー・ホールデイング・エルエルシーGTAT IP Holding LLC | ガリウム、インジウムまたはアルミニウムでドープされたケイ素の単結晶 |
KR20120047583A (ko) | 2010-11-04 | 2012-05-14 | 삼성전자주식회사 | 태양 전지 및 이의 제조 방법 |
JP5583053B2 (ja) * | 2011-02-28 | 2014-09-03 | グローバルウェーハズ・ジャパン株式会社 | シリコンウェーハの熱処理方法 |
US20120319157A1 (en) * | 2011-06-14 | 2012-12-20 | Semiconductor Energy Laboratory Co., Ltd. | Photoelectric conversion device |
JP5590002B2 (ja) * | 2011-10-12 | 2014-09-17 | 信越半導体株式会社 | 金属汚染評価方法及びエピタキシャルウェーハの製造方法 |
WO2013152054A1 (en) * | 2012-04-02 | 2013-10-10 | Nusola Inc. | Photovoltaic cell and process of manufacture |
US9099578B2 (en) | 2012-06-04 | 2015-08-04 | Nusola, Inc. | Structure for creating ohmic contact in semiconductor devices and methods for manufacture |
US20130255774A1 (en) * | 2012-04-02 | 2013-10-03 | Nusola, Inc. | Photovoltaic cell and process of manufacture |
US20150333193A1 (en) | 2012-12-31 | 2015-11-19 | Memc Electronic Matrials S.P.A. | Indium-doped silicon wafer and solar cell using the same |
JP5938113B1 (ja) * | 2015-01-05 | 2016-06-22 | 信越化学工業株式会社 | 太陽電池用基板の製造方法 |
US10692736B2 (en) * | 2016-11-14 | 2020-06-23 | Shin-Etsu Chemical Co., Ltd. | Method for producing high-photoelectric-conversion-efficiency solar cell and high-photoelectric-conversion-efficiency solar cell |
MX2022001459A (es) * | 2019-08-09 | 2022-06-08 | Leading Edge Equipment Tech Inc | Oblea con regiones de baja concentracion de oxigeno. |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH06211598A (ja) | 1993-01-19 | 1994-08-02 | Nippon Steel Corp | シリコン単結晶およびその熱処理方法 |
JPH06271384A (ja) | 1993-03-19 | 1994-09-27 | Sumitomo Metal Ind Ltd | 単結晶引き上げ方法 |
EP0733726A3 (en) * | 1995-03-24 | 1997-05-02 | Koji Izunome | Growing silicon single crystal with a uniform distribution of doping in the longitudinal or radial direction |
KR100240023B1 (ko) * | 1996-11-29 | 2000-01-15 | 윤종용 | 반도체 웨이퍼 열처리방법 및 이에 따라 형성된 반도체 웨이퍼 |
EP0949360A1 (en) * | 1998-04-07 | 1999-10-13 | Shin-Etsu Handotai Company Limited | Process for producing a silicon single crystal by Czochralski method. |
JP2000031153A (ja) * | 1998-07-13 | 2000-01-28 | Shin Etsu Handotai Co Ltd | Siウエーハ及びその製造方法 |
US6815605B1 (en) | 1999-05-28 | 2004-11-09 | Shin-Etsu Handotai Co., Ltd. | Silicon single crystal and wafer doped with gallium and method for producing them |
DE19927604A1 (de) | 1999-06-17 | 2000-12-21 | Bayer Ag | Silicium mit strukturierter Sauerstoffdotierung, dessen Herstellung und Verwendung |
JP2001064007A (ja) | 1999-06-24 | 2001-03-13 | Shin Etsu Chem Co Ltd | Ga添加多結晶シリコンおよびGa添加多結晶シリコンウエーハ並びにその製造方法 |
US6313398B1 (en) * | 1999-06-24 | 2001-11-06 | Shin-Etsu Chemical Co., Ltd. | Ga-doped multi-crytsalline silicon, Ga-doped multi-crystalline silicon wafer and method for producing the same |
JP2001267610A (ja) | 2000-03-17 | 2001-09-28 | Hitachi Ltd | 太陽電池 |
-
2000
- 2000-08-15 JP JP2000246306A patent/JP2002057351A/ja active Pending
-
2001
- 2001-08-08 EP EP01955600A patent/EP1313150A4/en not_active Ceased
- 2001-08-08 AU AU2001277718A patent/AU2001277718B2/en not_active Ceased
- 2001-08-08 WO PCT/JP2001/006830 patent/WO2002015284A1/ja active Application Filing
- 2001-08-08 AU AU7771801A patent/AU7771801A/xx active Pending
- 2001-08-08 KR KR1020037002089A patent/KR100870526B1/ko active IP Right Grant
- 2001-08-08 US US10/344,398 patent/US6830740B2/en not_active Expired - Lifetime
- 2001-08-14 TW TW090119901A patent/TWI295856B/zh not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
TWI295856B (ja) | 2008-04-11 |
KR20030027026A (ko) | 2003-04-03 |
US6830740B2 (en) | 2004-12-14 |
JP2002057351A (ja) | 2002-02-22 |
EP1313150A1 (en) | 2003-05-21 |
US20030177976A1 (en) | 2003-09-25 |
AU7771801A (en) | 2002-02-25 |
AU2001277718B2 (en) | 2006-07-06 |
EP1313150A4 (en) | 2006-06-14 |
WO2002015284A1 (fr) | 2002-02-21 |
KR100870526B1 (ko) | 2008-11-26 |
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