WO2002009936A1 - Alliages sans plomb a proprietes d'agent mouillant ameliorees - Google Patents

Alliages sans plomb a proprietes d'agent mouillant ameliorees Download PDF

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Publication number
WO2002009936A1
WO2002009936A1 PCT/US2001/022778 US0122778W WO0209936A1 WO 2002009936 A1 WO2002009936 A1 WO 2002009936A1 US 0122778 W US0122778 W US 0122778W WO 0209936 A1 WO0209936 A1 WO 0209936A1
Authority
WO
WIPO (PCT)
Prior art keywords
alloy
range
electronic device
die
metallic contact
Prior art date
Application number
PCT/US2001/022778
Other languages
English (en)
Inventor
Jianxing Li
Michael Pinter
Original Assignee
Honeywell International Inc.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Honeywell International Inc. filed Critical Honeywell International Inc.
Priority to AU2002227489A priority Critical patent/AU2002227489A1/en
Priority to JP2002516089A priority patent/JP2004514559A/ja
Priority to EP01984406A priority patent/EP1309447A4/fr
Publication of WO2002009936A1 publication Critical patent/WO2002009936A1/fr

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B15/00—Layered products comprising a layer of metal
    • B32B15/20—Layered products comprising a layer of metal comprising aluminium or copper
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L24/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
    • H01L2924/0132—Binary Alloys
    • H01L2924/01322—Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/14—Integrated circuits

Definitions

  • Alternative contemplated alloys comprise at least two metals selected from the group consisting of Sn, Ag, Bi, Zn, and Cu, wherein the alloy further comprises at least one sacrificial chemical element other than Sn, Ag, Bi, Zn, and Cu in more than a trace amount ⁇ i.e., greater than 10 ppm) that has an oxygen affinity higher than the alloy.
  • Still further alternative alloys comprise at least two metals selected from the group consisting of Sn, Sb, Bi, and Ag, wherein the alloy further comprises at least one sacrificial chemical element other than Sn, Sb, Bi, and Ag in more than a trace amount ⁇ i.e., greater than 10 ppm) that has an oxygen affinity higher than the alloy.
  • the die preferably comprises a semiconductor or an integrated circuit, and the metallic contact preferably comprises copper or a copper alloy.
  • the alloy comprises Zn, Al, Mg, and Ga, preferably with Zn in a range of 85 to 95 wt%, Al in a range of 3 to 8 wt%, Mg in a range of 1 to 5 wt%, and Ga in a range of 1 to 5 wt%.
  • Other particularly contemplated alloys comprise Ag, Cu, Bi, and Zn, preferably at a composition in which Ag is in a range of 1 to 5 wt%, Cu is in a range of 0.5 to 2.5 wt%, Ag and Cu are in a range of 0 to 5 wt% and 0-2.5wt%, respectively, Ag and Bi are in a range of 0 to 5 wt% and 0-6 wt%, respectively, or Zn and Bi are in a range of 0.5 to 2.5 wt% and 0 to 6 wt%, respectively, with the balance being Sn.
  • Still further especially contemplated alloys comprise Sn, Ag, Bi, and Sb, preferably in a composition in which Sb is in a range of 5 to 15 wt% and Bi is in a range of 0 to 6 wt% and the balance being Sn, or in a composition in which Ag is in a range of 20 to 30 wt% and Sb is in a range of 5 to 15 wt% and the balance being Sn.
  • the sacrificial chemical element having a oxygen affinity higher than the alloy is Al, Ba, Ca, Ce, Cs, Hf, Li, Mg, Nd, P, Sc, Sr, Ti, Y, or Zr. It is further preferred that the element is present in a concentration between about 10 ppm and 1000 ppm.
  • the melting point of contemplated alloys is at least 270°C, and preferably between 270°C and 330°C.
  • FIG. 1 is a schematic side view of an electronic device according to the inventive subject matter.
  • the term "alloy” refers to a homogeneous mixture or solid solution of two or more metals, in which the atoms of one metal replace or occupy interstitial positions between the atoms of the other.
  • oxygen affinity refers to the propensity of a compound or element to react with radical, molecular, or ionic oxygen to form the respective oxide, which may be chemically stable ⁇ i.e., the oxide can be isolated), or may further react into a chemically and/or thermodynamically more stable form. For example, calcium oxidizes under identical reaction conditions at a considerably faster rate than platinum, and has therefore a significantly higher oxygen affinity than platinum under the scope of this definition.
  • an electronic device 100 has a substrate 110 onto which an electrical contact 120 is disposed.
  • a coupling layer 130 electrically connects and physically couples the die 140 to the electrical contact 120.
  • the substrate 110 is typically a material employed in packaging integrated circuit dies, and contemplated materials include molded plastics, laminated plastics, pressed ceramics and laminated ceramics. Many materials and configurations for suitable substrates are known in the art, and all of them are contemplated for use in conjunction with the teachings presented herein. For example, a collection of suitable substrates can be found in Electronic Packaging & Interconnection Handbook by CA. Harper, published by McGraw-Hill, 2 nd edition, 1997, (ISBN 0-07-026694-8).
  • electrical contact 120 it is contemplated that a wide variety of electrical contacts are appropriate, and especially preferred contacts include copper contacts, or copper contacts that are sputtered and/or plated with a gold or silver layer. Where resistance to corrosion is particularly desirable, appropriate contacts may also include noble metals and their alloys, including gold, platinum, silver, etc. While it is contemplated that the contact or contacts are considerably thinner than the substrate ⁇ e.g., a conductive trace or thin metal layer of less than 500 microns), pin-shaped contacts or contacts considerably thicker than 500 microns are also contemplated. For example, where the contact is concurrently used as a heat sink, a copper plate with a thickness of about 800-1000 microns or more maybe employed.
  • alloys comprising Zn, Mg, Al, and Ga, are generally preferred, various alternative alloys are also contemplated, so long as the melting temperature is at least 270°C, preferably in a range of about 270°C - 450°C, and even more preferably 280°C - 380°C.
  • an alternative alloy may comprise Sn, Ag, Bi, Zn, and Cu.
  • the alloy comprises Ag in a range of 1 to 5 wt% with the balance being Sn.
  • Cu may be alloyed with Sn in a range of 0.5 to 2.5 wt%.
  • Ag and Cu are in a range of 0 to 5 wt% and 0-2.5 wt%, respectively, Ag and Bi are in a range of 0 to 5 wt% and 0-6 wt%, respectively, or Zn and Bi are in a range of 0.5 to 2.5 wt% and 0 to 6 wt%, respectively, with the balance being Sn.
  • contemplated alloys may comprise Sn, Ag, Bi, and Sb, preferably in a composition in which Sb is in a range of 5 to 15 wt% and Bi is in a range of 0 to 6 wt% with the balance being Sn, or in a composition in which Ag is in a range of 20 to 30 wt% and Sb is in a range of 5 to 15 wt% with the balance being Sn.
  • Pb is a less preferred component of contemplated alloys. It should further be understood that all alloy compositions of the inventive subject matter presented herein may include incidental impuri- ties of organic or inorganic components, elements, and their naturally occurring oxides and/or derivatives. For example, impurities may include oils, antimony, borate, etc.
  • soldering step is performed in an oxygen containing atmosphere
  • concentrations of the element of 10 ppm to 1000 ppm and more are contemplated.
  • elements with a relatively low oxygen affinity ⁇ e.g., titanium
  • appropriate concentrations maybe in the range of about 200 ppm - to 1000 ppm and more.
  • contemplated alloys may comprise binary, ternary, and higher mixtures of the elements.
  • suitable alloys may include mixtures of P and Ti, or Ca, Sr, and P, so long as the mixtures and its individual components have an oxygen affinity that is higher than that of the alloy.
  • elements but also organic and/or organometallic molecules may be employed, provided that such molecules have an oxygen affinity greater than the oxygen affinity of the alloy.
  • TCEP tris-carboxyethylphosphine
  • an organometallic reducing agent ⁇ i.e., an agent with relatively high oxygen affinity
  • elements having a higher oxygen affinity than the alloy reduce metal oxides that are known to increase the surface tension of a melting or molten solder. Therefore, a decrease in the amount of metal oxides during soldering will generally reduce the surface tension of the molten solder, and thereby significantly increase the wetting ability of the solder.

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Die Bonding (AREA)

Abstract

L'invention concerne un dispositif électronique doté d'une puce fixée à un contact métallique d'un substrat par le biais d'une couche de couplage. Cette dernière comprend un alliage d'au moins deux métaux choisis dans le groupe formé de Zn, Al, Mg et Ga, et au moins un élément chimique sacrificiel autre que Zn, Al, Mg et Ga à une teneur de 10-1000 ppm avec une affinité pour l'oxygène supérieure à l'alliage. D'autres alliages comportent au moins deux métaux choisis dans le groupe formé de Sn, Ag, Bi, Zn et Cu, et au moins un élément chimique sacrificiel autre que Sn, Ag, Bi, Zn et Cu. D'autres alliages envisagés encore comportent au moins deux métaux choisis dans le groupe formé de Sn, Ag, Bi et Sb, et au moins un élément chimique sacrificiel autre que Sn, Ag, Bi et Sb. Ces alliages sans plomb, qui révèlent des caractéristiques d'agent mouillant améliorées, peuvent être utilisés dans des procédés de soudage de grande fiabilité pour des applications de micro-électronique.
PCT/US2001/022778 2000-07-31 2001-07-18 Alliages sans plomb a proprietes d'agent mouillant ameliorees WO2002009936A1 (fr)

Priority Applications (3)

Application Number Priority Date Filing Date Title
AU2002227489A AU2002227489A1 (en) 2000-07-31 2001-07-18 Lead-free alloys with improved wetting properties
JP2002516089A JP2004514559A (ja) 2000-07-31 2001-07-18 ぬれ性の改善された鉛非含有合金
EP01984406A EP1309447A4 (fr) 2000-07-31 2001-07-18 Alliages sans plomb a proprietes d'agent mouillant ameliorees

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US22182000P 2000-07-31 2000-07-31
US60/221,820 2000-07-31

Publications (1)

Publication Number Publication Date
WO2002009936A1 true WO2002009936A1 (fr) 2002-02-07

Family

ID=22829529

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2001/022778 WO2002009936A1 (fr) 2000-07-31 2001-07-18 Alliages sans plomb a proprietes d'agent mouillant ameliorees

Country Status (4)

Country Link
EP (1) EP1309447A4 (fr)
JP (1) JP2004514559A (fr)
AU (1) AU2002227489A1 (fr)
WO (1) WO2002009936A1 (fr)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102632347A (zh) * 2012-01-09 2012-08-15 西安交通大学 一种铝基复合材料及铝合金用钎料及钎焊方法
CN102814596A (zh) * 2011-06-07 2012-12-12 英飞凌科技股份有限公司 焊料合金及布置
CN104169041A (zh) * 2011-08-17 2014-11-26 霍尼韦尔国际公司 无铅焊料组合物
US9520347B2 (en) 2013-05-03 2016-12-13 Honeywell International Inc. Lead frame construct for lead-free solder connections
CN106271193A (zh) * 2016-09-23 2017-01-04 河南科技大学 一种铜/铝合金钎焊用钎料及其制备方法
CN107663604A (zh) * 2016-07-27 2018-02-06 千住金属工业株式会社 喷镀用合金、喷镀用合金线、薄膜电容器以及软钎料合金
US10046417B2 (en) 2011-08-17 2018-08-14 Honeywell International Inc. Lead-free solder compositions
US20210217919A1 (en) * 2018-05-28 2021-07-15 Ecole Polytechnique Federale De Lausanne (Epfl) Excitonic device and operating methods thereof

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JPS4911748A (fr) * 1972-05-16 1974-02-01
JPS5613456A (en) * 1979-07-16 1981-02-09 Mitsubishi Alum Co Ltd Aluminum alloy for brazing filler metal of brazing sheet
US4929423A (en) * 1988-03-31 1990-05-29 Cookson Group Plc Low toxicity alloy compositions for joining and sealing
SU1731547A1 (ru) * 1990-08-17 1992-05-07 Московский вечерний металлургический институт Припой дл пайки и лужени медных сплавов
US5411703A (en) * 1993-06-16 1995-05-02 International Business Machines Corporation Lead-free, tin, antimony, bismtuh, copper solder alloy
US5527628A (en) * 1993-07-20 1996-06-18 Iowa State University Research Foudation, Inc. Pb-free Sn-Ag-Cu ternary eutectic solder
US5851482A (en) * 1996-03-22 1998-12-22 Korea Institute Of Machinery & Metals Tin-bismuth based lead-free solder for copper and copper alloys
JPH11172352A (ja) * 1997-12-04 1999-06-29 Sumitomo Metal Mining Co Ltd 高温はんだ付用Ｚｎ合金
US5980822A (en) * 1997-02-15 1999-11-09 Samsung Electronics Co., Ltd. Leadless alloy for soldering
JP2000006186A (ja) * 1998-06-29 2000-01-11 Nissha Printing Co Ltd インサート成形品の製造方法
US6027575A (en) * 1997-10-27 2000-02-22 Ford Motor Company Metallic adhesive for forming electronic interconnects at low temperatures
US6156132A (en) * 1998-02-05 2000-12-05 Fuji Electric Co., Ltd. Solder alloys
US6176947B1 (en) * 1998-12-31 2001-01-23 H-Technologies Group, Incorporated Lead-free solders
US6184475B1 (en) * 1994-09-29 2001-02-06 Fujitsu Limited Lead-free solder composition with Bi, In and Sn
US6228322B1 (en) * 1998-09-24 2001-05-08 Sony Corporation Solder alloy composition
US6241942B1 (en) * 1995-09-29 2001-06-05 Matsushita Electric Industrial Co., Ltd. Lead-free solder alloys

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JPS6032975B2 (ja) * 1977-04-05 1985-07-31 日本電気株式会社 半導体装置
US5019336A (en) * 1989-03-13 1991-05-28 Allied-Signal Inc. Micro-additions to tin alloys
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JPS4911748A (fr) * 1972-05-16 1974-02-01
JPS5613456A (en) * 1979-07-16 1981-02-09 Mitsubishi Alum Co Ltd Aluminum alloy for brazing filler metal of brazing sheet
US4929423A (en) * 1988-03-31 1990-05-29 Cookson Group Plc Low toxicity alloy compositions for joining and sealing
SU1731547A1 (ru) * 1990-08-17 1992-05-07 Московский вечерний металлургический институт Припой дл пайки и лужени медных сплавов
US5411703A (en) * 1993-06-16 1995-05-02 International Business Machines Corporation Lead-free, tin, antimony, bismtuh, copper solder alloy
US5527628A (en) * 1993-07-20 1996-06-18 Iowa State University Research Foudation, Inc. Pb-free Sn-Ag-Cu ternary eutectic solder
US6184475B1 (en) * 1994-09-29 2001-02-06 Fujitsu Limited Lead-free solder composition with Bi, In and Sn
US6241942B1 (en) * 1995-09-29 2001-06-05 Matsushita Electric Industrial Co., Ltd. Lead-free solder alloys
US5851482A (en) * 1996-03-22 1998-12-22 Korea Institute Of Machinery & Metals Tin-bismuth based lead-free solder for copper and copper alloys
US5980822A (en) * 1997-02-15 1999-11-09 Samsung Electronics Co., Ltd. Leadless alloy for soldering
US6027575A (en) * 1997-10-27 2000-02-22 Ford Motor Company Metallic adhesive for forming electronic interconnects at low temperatures
JPH11172352A (ja) * 1997-12-04 1999-06-29 Sumitomo Metal Mining Co Ltd 高温はんだ付用Ｚｎ合金
US6156132A (en) * 1998-02-05 2000-12-05 Fuji Electric Co., Ltd. Solder alloys
JP2000006186A (ja) * 1998-06-29 2000-01-11 Nissha Printing Co Ltd インサート成形品の製造方法
US6228322B1 (en) * 1998-09-24 2001-05-08 Sony Corporation Solder alloy composition
US6176947B1 (en) * 1998-12-31 2001-01-23 H-Technologies Group, Incorporated Lead-free solders

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See also references of EP1309447A4 *

Cited By (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10930614B2 (en) * 2011-06-07 2021-02-23 Infineon Technologies Ag Chip arrangements
CN102814596A (zh) * 2011-06-07 2012-12-12 英飞凌科技股份有限公司 焊料合金及布置
US20120313230A1 (en) * 2011-06-07 2012-12-13 Infineon Technologies Ag Solder alloys and arrangements
US20210167034A1 (en) * 2011-06-07 2021-06-03 Infineon Technologies Ag Chip arrangements
US9735126B2 (en) * 2011-06-07 2017-08-15 Infineon Technologies Ag Solder alloys and arrangements
US20170323865A1 (en) * 2011-06-07 2017-11-09 Infineon Technologies Ag Chip arrangements
CN104169041A (zh) * 2011-08-17 2014-11-26 霍尼韦尔国际公司 无铅焊料组合物
US10046417B2 (en) 2011-08-17 2018-08-14 Honeywell International Inc. Lead-free solder compositions
US10661393B2 (en) 2011-08-17 2020-05-26 Honeywell International Inc. Lead-free solder compositions
CN102632347B (zh) * 2012-01-09 2014-07-02 西安交通大学 一种铝基复合材料及铝合金用钎料及钎焊方法
CN102632347A (zh) * 2012-01-09 2012-08-15 西安交通大学 一种铝基复合材料及铝合金用钎料及钎焊方法
US9520347B2 (en) 2013-05-03 2016-12-13 Honeywell International Inc. Lead frame construct for lead-free solder connections
CN107663604A (zh) * 2016-07-27 2018-02-06 千住金属工业株式会社 喷镀用合金、喷镀用合金线、薄膜电容器以及软钎料合金
CN106271193A (zh) * 2016-09-23 2017-01-04 河南科技大学 一种铜/铝合金钎焊用钎料及其制备方法
US20210217919A1 (en) * 2018-05-28 2021-07-15 Ecole Polytechnique Federale De Lausanne (Epfl) Excitonic device and operating methods thereof

Also Published As

Publication number Publication date
AU2002227489A1 (en) 2002-02-13
EP1309447A4 (fr) 2005-11-09
JP2004514559A (ja) 2004-05-20
EP1309447A1 (fr) 2003-05-14

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