EP1309447A1 - Alliages sans plomb a proprietes d'agent mouillant ameliorees - Google Patents

Alliages sans plomb a proprietes d'agent mouillant ameliorees

Info

Publication number
EP1309447A1
EP1309447A1 EP01984406A EP01984406A EP1309447A1 EP 1309447 A1 EP1309447 A1 EP 1309447A1 EP 01984406 A EP01984406 A EP 01984406A EP 01984406 A EP01984406 A EP 01984406A EP 1309447 A1 EP1309447 A1 EP 1309447A1
Authority
EP
European Patent Office
Prior art keywords
alloy
range
electronic device
die
metallic contact
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP01984406A
Other languages
German (de)
English (en)
Other versions
EP1309447A4 (fr
Inventor
Jianxing Li
Michael Pinter
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Honeywell International Inc
Original Assignee
Honeywell International Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Honeywell International Inc filed Critical Honeywell International Inc
Publication of EP1309447A1 publication Critical patent/EP1309447A1/fr
Publication of EP1309447A4 publication Critical patent/EP1309447A4/fr
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B15/00—Layered products comprising a layer of metal
    • B32B15/20—Layered products comprising a layer of metal comprising aluminium or copper
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L24/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
    • H01L2924/0132—Binary Alloys
    • H01L2924/01322—Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/14—Integrated circuits

Definitions

  • the field of the invention is die attach solders.
  • Silicon wafers carrying integrated circuits are typically cut into a plurality of dies, and the dies are subsequently attached to a packaging material to physically protect, and electrically connect the integrated circuit on the die to a plurality of electrical contacts.
  • Various configurations and methods of attaching a die ⁇ i.e., die attach) are known in the art, however, all or almost all of them suffer from one or more disadvantages.
  • a die is attached to a substrate with a polymeric adhesive such as an epoxy resin or a cyanate ester resin.
  • a polymeric adhesive such as an epoxy resin or a cyanate ester resin.
  • Polymeric adhesives frequently exhibit several desirable qualities.
  • cyanate ester-containing die attach adhesives can be cured within a relatively short time (t.e., within several minutes) at a temperature typically below 200°C (see e.g., U.S. Pat. Nos. 5,150,195, 5,195,299, 5,250,600, 5,399,907, and
  • polymeric adhesives retain structural flexibility after curing to allow die attach of integrated circuits onto flexible substrates as disclosed in U.S. Pat. No. 5,612,403 to Nguyen et al.
  • many polymeric adhesives tend to produce resin bleed, potentially leading to undesirable reduction of electrical contact of the die with the substrate, or even partial or total detachment of the die.
  • application of polymeric adhesives to the substrate and/or die typically requires the use of organic solvents that tend to generate inhomogeneity in the adhesive when the solvent is removed.
  • die attach adhesives comprising a silicone composition
  • a silicone composition that cures both via a free radical reaction of an acrylic-functional organopolysiloxane and via a hydrosilylation reaction between an alkenyl-functional organopolysiloxane and a silicon-bonded hydrogen-functional Organopolysiloxane.
  • Mitani 's silicone composition advantageously suppresses the outmigration of low-molecular- weight silicone oil, thereby alleviating potential problems, including impaired wire bondability to the semiconductor chip or lead frame, and defective bonding between the resin sealant and the semiconductor chip, substrate, package, and/or lead frame.
  • the curing process for Mitani 's silicone composition requires a source of high-energy radiation, which may add significant cost to the die attach process.
  • Mitani 's silicone composition still requires a solvent.
  • a glass paste comprising a high-lead borosilicate glass with a softening temperature of approximately 325°C-425°C is employed to couple a die to a substrate.
  • the glass paste is dried and heated to permanently bond the die to the substrate.
  • Glass pastes typically avoid problems associated with bleeding of low molecular weight components, however, they often require temperatures of 425 °C and higher to permanently bond the die to the substrate. Moreover, glass pastes frequently tend to crystallize during heating and cooling, thereby reducing the adhesive qualities of the bonding layer.
  • an improved glass paste composition including V 2 O 5 , Ti 2 O 3 , P 2 O 5 , and Ag can be employed as disclosed in U.S. Pat. No. 5,076,876 to Dietz et al.
  • Such compositions advantageously reduce the firing temperature ⁇ i.e. the temperature required to achieve permanent bonding) to a temperature of less than 350°C while simultaneously reducing the undesired incidence of crystallization.
  • heating an electronic device to 350°C might still be undesirably high in some applications.
  • the use of the improved glass paste composition generally requires a solvent, which may be difficult to remove, especially where the die is relatively large.
  • a die is attached to a substrate by soldering.
  • Soldering a die to a substrate has various advantages, including relatively simple processing, solvent-free application, and especially when a lead-based solder is utilized, relatively low cost.
  • the use of lead may pose environmental and health problems not only during manufacturing, but also after an electronic device that includes a lead-based die attach has been disposed of ⁇ e.g., in a landfill).
  • lead has been replaced in Sn- based alloys by various low melting point metals such as bismuth to form a eutectic alloy replacement (see e.g., U.S. Pat. No.
  • eutectic alloy replacements typically exhibit melting temperatures well below 270°C, which is especially problematic when the assembled electronic device ⁇ i.e., the die attached to the substrate) is exposed to temperatures above the melting point of the eutectic alloy replacement in a downstream processing step ⁇ e.g., wave soldering).
  • the present invention is directed to an electronic device in which a die is attached to a metallic contact of a substrate via a coupling layer, wherein the coupling layer comprises an alloy of at least two metals selected from the group consisting of Zn, Al, Mg, and Ga, and wherein the alloy further comprises at least one sacrificial chemical element other than Zn, Al, Mg, and Ga in more than a trace amount ⁇ i.e., greater than 10 ppm) that has an oxygen affinity higher than the alloy.
  • Alternative contemplated alloys comprise at least two metals selected from the group consisting of Sn, Ag, Bi, Zn, and Cu, wherein the alloy further comprises at least one sacrificial chemical element other than Sn, Ag, Bi, Zn, and Cu in more than a trace amount ⁇ i.e., greater than 10 ppm) that has an oxygen affinity higher than the alloy.
  • Still further alternative alloys comprise at least two metals selected from the group consisting of Sn, Sb, Bi, and Ag, wherein the alloy further comprises at least one sacrificial chemical element other than Sn, Sb, Bi, and Ag in more than a trace amount ⁇ i.e., greater than 10 ppm) that has an oxygen affinity higher than the alloy.
  • the die preferably comprises a semiconductor or an integrated circuit, and the metallic contact preferably comprises copper or a copper alloy.
  • the alloy comprises Zn, Al, Mg, and Ga, preferably with Zn in a range of 85 to 95 wt%, Al in a range of 3 to 8 wt%, Mg in a range of 1 to 5 wt%, and Ga in a range of 1 to 5 wt%.
  • Other particularly contemplated alloys comprise Ag, Cu, Bi, and Zn, preferably at a composition in which Ag is in a range of 1 to 5 wt%, Cu is in a range of 0.5 to 2.5 wt%, Ag and Cu are in a range of 0 to 5 wt% and 0-2.5wt%, respectively, Ag and Bi are in a range of 0 to 5 wt% and 0-6 wt%, respectively, or Zn and Bi are in a range of 0.5 to 2.5 wt% and 0 to 6 wt%, respectively, with the balance being Sn.
  • Still further especially contemplated alloys comprise Sn, Ag, Bi, and Sb, preferably in a composition in which Sb is in a range of 5 to 15 wt% and Bi is in a range of 0 to 6 wt% and the balance being Sn, or in a composition in which Ag is in a range of 20 to 30 wt% and Sb is in a range of 5 to 15 wt% and the balance being Sn.
  • the sacrificial chemical element having a oxygen affinity higher than the alloy is Al, Ba, Ca, Ce, Cs, Hf, Li, Mg, Nd, P, Sc, Sr, Ti, Y, or Zr. It is further preferred that the element is present in a concentration between about 10 ppm and 1000 ppm.
  • the melting point of contemplated alloys is at least 270°C, and preferably between 270°C and 330°C.
  • FIG. 1 is a schematic side view of an electronic device according to the inventive subject matter.
  • the term "alloy” refers to a homogeneous mixture or solid solution of two or more metals, in which the atoms of one metal replace or occupy interstitial positions between the atoms of the other.
  • oxygen affinity refers to the propensity of a compound or element to react with radical, molecular, or ionic oxygen to form the respective oxide, which may be chemically stable ⁇ i.e., the oxide can be isolated), or may further react into a chemically and/or thermodynamically more stable form. For example, calcium oxidizes under identical reaction conditions at a considerably faster rate than platinum, and has therefore a significantly higher oxygen affinity than platinum under the scope of this definition.
  • an electronic device 100 has a substrate 110 onto which an electrical contact 120 is disposed.
  • a coupling layer 130 electrically connects and physically couples the die 140 to the electrical contact 120.
  • the substrate 110 is typically a material employed in packaging integrated circuit dies, and contemplated materials include molded plastics, laminated plastics, pressed ceramics and laminated ceramics. Many materials and configurations for suitable substrates are known in the art, and all of them are contemplated for use in conjunction with the teachings presented herein. For example, a collection of suitable substrates can be found in Electronic Packaging & Interconnection Handbook by CA. Harper, published by McGraw-Hill, 2 nd edition, 1997, (ISBN 0-07-026694-8).
  • electrical contact 120 it is contemplated that a wide variety of electrical contacts are appropriate, and especially preferred contacts include copper contacts, or copper contacts that are sputtered and/or plated with a gold or silver layer. Where resistance to corrosion is particularly desirable, appropriate contacts may also include noble metals and their alloys, including gold, platinum, silver, etc. While it is contemplated that the contact or contacts are considerably thinner than the substrate ⁇ e.g., a conductive trace or thin metal layer of less than 500 microns), pin-shaped contacts or contacts considerably thicker than 500 microns are also contemplated. For example, where the contact is concurrently used as a heat sink, a copper plate with a thickness of about 800-1000 microns or more maybe employed.
  • the contact may be affixed or deposited on the substrate by various methods, including vapor deposition, electro- and electroless plating, sputtering, photo-chemical deposition or by methods utilizing an adhesive.
  • the coupling layer 130 is preferably an alloy comprising Zn, Mg, Al, and Ga, wherein Zn is in a range of 85 to 95 wt%, Al is in a range of 3 to 8 wt%, Mg is in a range of 1 to 5 wt%, and Ga is in a range of 1 to 5 wt%.
  • the alloy comprises Zn at approximately 90 wt%, Al at approximately 5 wt%, Mg at approximately 3 wt%, and Ga at approximately 2 wt%.
  • alloys comprising Zn, Mg, Al, and Ga, are generally preferred, various alternative alloys are also contemplated, so long as the melting temperature is at least 270°C, preferably in a range of about 270°C - 450°C, and even more preferably 280°C - 380°C.
  • an alternative alloy may comprise Sn, Ag, Bi, Zn, and Cu.
  • the alloy comprises Ag in a range of 1 to 5 wt% with the balance being Sn.
  • Cu may be alloyed with Sn in a range of 0.5 to 2.5 wt%.
  • Ag and Cu are in a range of 0 to 5 wt% and 0-2.5 wt%, respectively, Ag and Bi are in a range of 0 to 5 wt% and 0-6 wt%, respectively, or Zn and Bi are in a range of 0.5 to 2.5 wt% and 0 to 6 wt%, respectively, with the balance being Sn.
  • contemplated alloys may comprise Sn, Ag, Bi, and Sb, preferably in a composition in which Sb is in a range of 5 to 15 wt% and Bi is in a range of 0 to 6 wt% with the balance being Sn, or in a composition in which Ag is in a range of 20 to 30 wt% and Sb is in a range of 5 to 15 wt% with the balance being Sn.
  • Pb is a less preferred component of contemplated alloys. It should further be understood that all alloy compositions of the inventive subject matter presented herein may include incidental impuri- ties of organic or inorganic components, elements, and their naturally occurring oxides and/or derivatives. For example, impurities may include oils, antimony, borate, etc.
  • the sacrificial chemical element having an oxygen affinity higher than the other constituents of the alloy
  • the sacrificial chemical element is phosphorus, calcium, or titanium, or any combination thereof.
  • suitable sacrificial chemical elements may also include alkali metals, transition metals, and non-trans- ition metals including Al, Ba, Ca, Ce, Cs, Hf, Li, Mg, Nd, P, Sc, Sr, Ti, Y, or Zr.
  • the element is a "non-essential component" of the alloy, that is, the concentration of the element is less than 1 wt%.
  • the preferred concentration of the element is between about 10 ppm to about 1000 ppm, and will predominantly be determined by the particular alloy employed, the amount of oxides present in the metallic contact, and the condition under which the solder step for the die attach is performed. For example, where the die attach is performed under an inert atmosphere, and the metallic contact predominantly comprises gold, relatively low concentrations of approximately 10-100 ppm maybe appropriate.
  • concentrations of less than 100 ppm maybe required.
  • soldering step is performed in an oxygen containing atmosphere
  • concentrations of the element of 10 ppm to 1000 ppm and more are contemplated.
  • elements with a relatively low oxygen affinity ⁇ e.g., titanium
  • appropriate concentrations maybe in the range of about 200 ppm - to 1000 ppm and more.
  • contemplated alloys may comprise binary, ternary, and higher mixtures of the elements.
  • suitable alloys may include mixtures of P and Ti, or Ca, Sr, and P, so long as the mixtures and its individual components have an oxygen affinity that is higher than that of the alloy.
  • elements but also organic and/or organometallic molecules may be employed, provided that such molecules have an oxygen affinity greater than the oxygen affinity of the alloy.
  • TCEP tris-carboxyethylphosphine
  • an organometallic reducing agent ⁇ i.e., an agent with relatively high oxygen affinity
  • elements having a higher oxygen affinity than the alloy reduce metal oxides that are known to increase the surface tension of a melting or molten solder. Therefore, a decrease in the amount of metal oxides during soldering will generally reduce the surface tension of the molten solder, and thereby significantly increase the wetting ability of the solder.
  • the die 140 is fabricated from a silicon or sapphire wafer and processed to comprise a plurality of semiconductor elements.
  • Preferred dies comprise an integrated circuit, and may have a size between less than one or two mm to several cm 2 and more.
  • the die has a metal coating on the side that contacts the coupling layer, wherein the metal coating may comprise various metals and metal alloys, including an Au/Si, Ag/Sn, Cu/In, Au/Sn alloy, copper, and gold- or silver coated copper.

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Die Bonding (AREA)

Abstract

L'invention concerne un dispositif électronique doté d'une puce fixée à un contact métallique d'un substrat par le biais d'une couche de couplage. Cette dernière comprend un alliage d'au moins deux métaux choisis dans le groupe formé de Zn, Al, Mg et Ga, et au moins un élément chimique sacrificiel autre que Zn, Al, Mg et Ga à une teneur de 10-1000 ppm avec une affinité pour l'oxygène supérieure à l'alliage. D'autres alliages comportent au moins deux métaux choisis dans le groupe formé de Sn, Ag, Bi, Zn et Cu, et au moins un élément chimique sacrificiel autre que Sn, Ag, Bi, Zn et Cu. D'autres alliages envisagés encore comportent au moins deux métaux choisis dans le groupe formé de Sn, Ag, Bi et Sb, et au moins un élément chimique sacrificiel autre que Sn, Ag, Bi et Sb. Ces alliages sans plomb, qui révèlent des caractéristiques d'agent mouillant améliorées, peuvent être utilisés dans des procédés de soudage de grande fiabilité pour des applications de micro-électronique.
EP01984406A 2000-07-31 2001-07-18 Alliages sans plomb a proprietes d'agent mouillant ameliorees Withdrawn EP1309447A4 (fr)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US22182000P 2000-07-31 2000-07-31
US221820P 2000-07-31
PCT/US2001/022778 WO2002009936A1 (fr) 2000-07-31 2001-07-18 Alliages sans plomb a proprietes d'agent mouillant ameliorees

Publications (2)

Publication Number Publication Date
EP1309447A1 true EP1309447A1 (fr) 2003-05-14
EP1309447A4 EP1309447A4 (fr) 2005-11-09

Family

ID=22829529

Family Applications (1)

Application Number Title Priority Date Filing Date
EP01984406A Withdrawn EP1309447A4 (fr) 2000-07-31 2001-07-18 Alliages sans plomb a proprietes d'agent mouillant ameliorees

Country Status (4)

Country Link
EP (1) EP1309447A4 (fr)
JP (1) JP2004514559A (fr)
AU (1) AU2002227489A1 (fr)
WO (1) WO2002009936A1 (fr)

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US9735126B2 (en) * 2011-06-07 2017-08-15 Infineon Technologies Ag Solder alloys and arrangements
US20130045131A1 (en) * 2011-08-17 2013-02-21 Honeywell International Inc. Lead-Free Solder Compositions
CN102632347B (zh) * 2012-01-09 2014-07-02 西安交通大学 一种铝基复合材料及铝合金用钎料及钎焊方法
KR20160003078A (ko) 2013-05-03 2016-01-08 허니웰 인터내셔날 인코포레이티드 무연 솔더 접속을 위한 리드 프레임 구조체
KR20160121562A (ko) 2014-02-20 2016-10-19 허니웰 인터내셔날 인코포레이티드 무연 솔더 조성물
JP6119909B1 (ja) * 2016-07-27 2017-04-26 千住金属工業株式会社 溶射用合金、溶射用合金線、フィルムコンデンサ、およびはんだ合金
CN106271193B (zh) * 2016-09-23 2018-06-15 河南科技大学 一种铜/铝合金钎焊用钎料及其制备方法
US20210217919A1 (en) * 2018-05-28 2021-07-15 Ecole Polytechnique Federale De Lausanne (Epfl) Excitonic device and operating methods thereof

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US5019336A (en) * 1989-03-13 1991-05-28 Allied-Signal Inc. Micro-additions to tin alloys
EP0855242A1 (fr) * 1995-09-29 1998-07-29 Matsushita Electric Industrial Co., Ltd. Soudure sans plomb
DE19816671A1 (de) * 1997-04-16 1998-10-22 Fuji Electric Co Ltd Lötmittel-Legierungen
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EP0976489A1 (fr) * 1996-12-17 2000-02-02 Sony Corporation Matériau pour soudure tendre
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Publication number Priority date Publication date Assignee Title
US5019336A (en) * 1989-03-13 1991-05-28 Allied-Signal Inc. Micro-additions to tin alloys
EP0855242A1 (fr) * 1995-09-29 1998-07-29 Matsushita Electric Industrial Co., Ltd. Soudure sans plomb
EP0976489A1 (fr) * 1996-12-17 2000-02-02 Sony Corporation Matériau pour soudure tendre
DE19816671A1 (de) * 1997-04-16 1998-10-22 Fuji Electric Co Ltd Lötmittel-Legierungen
DE19904765A1 (de) * 1998-02-05 1999-08-12 Fuji Electric Co Ltd Lötmittel-Legierungen
EP0988920A1 (fr) * 1998-09-14 2000-03-29 Murata Manufacturing Co., Ltd. Article soudé

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Title
CSANADY A ET AL: "The influence of some alloying additions (Cr, Cu and Li) on the thermal oxidation of Al-Zn-Mg alloys" CORROSION SCIENCE UK, vol. 22, no. 7, 1982, pages 689-713, XP002343390 ISSN: 0010-938X *
PATENT ABSTRACTS OF JAPAN vol. 2000, no. 05, 14 September 2000 (2000-09-14) & JP 2000 061686 A (SUMITOMO METAL MINING CO LTD), 29 February 2000 (2000-02-29) *
PATENT ABSTRACTS OF JAPAN vol. 2000, no. 07, 29 September 2000 (2000-09-29) -& JP 2000 094181 A (SONY CORP), 4 April 2000 (2000-04-04) *
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SHIMIZU T; ISHIKAWA H; OHNUMA I; ISHIDA K: "Zn-Al-Mg-Ga alloys as Pb-free solder for die-attaching use" JOURNAL OF ELECTRONIC MATERIALS TMS USA, vol. 28, no. 11, November 1999 (1999-11), pages 1172-1175, XP009053240 ISSN: 0361-5235 *

Also Published As

Publication number Publication date
WO2002009936A1 (fr) 2002-02-07
EP1309447A4 (fr) 2005-11-09
AU2002227489A1 (en) 2002-02-13
JP2004514559A (ja) 2004-05-20

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