WO2002008833A1 - Generateurs de photo-acide, compositions de resine photosensible contenant ces generateurs de photo-acide et procede de gravure faisant appel a ces compositions - Google Patents

Generateurs de photo-acide, compositions de resine photosensible contenant ces generateurs de photo-acide et procede de gravure faisant appel a ces compositions Download PDF

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Publication number
WO2002008833A1
WO2002008833A1 PCT/JP2001/006325 JP0106325W WO0208833A1 WO 2002008833 A1 WO2002008833 A1 WO 2002008833A1 JP 0106325 W JP0106325 W JP 0106325W WO 0208833 A1 WO0208833 A1 WO 0208833A1
Authority
WO
WIPO (PCT)
Prior art keywords
photoacid generators
compositions
same
patterning method
compositions containing
Prior art date
Application number
PCT/JP2001/006325
Other languages
English (en)
French (fr)
Inventor
Shigeyuki Iwasa
Katsumi Maeda
Kaichiro Nakano
Etsuo Hasegawa
Original Assignee
Nec Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nec Corporation filed Critical Nec Corporation
Priority to US10/333,579 priority Critical patent/US6849384B2/en
Priority to KR1020037000975A priority patent/KR100547594B1/ko
Publication of WO2002008833A1 publication Critical patent/WO2002008833A1/ja

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C381/00—Compounds containing carbon and sulfur and having functional groups not covered by groups C07C301/00 - C07C337/00
    • C07C381/12—Sulfonium compounds
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07D—HETEROCYCLIC COMPOUNDS
    • C07D333/00—Heterocyclic compounds containing five-membered rings having one sulfur atom as the only ring hetero atom
    • C07D333/02—Heterocyclic compounds containing five-membered rings having one sulfur atom as the only ring hetero atom not condensed with other rings
    • C07D333/46—Heterocyclic compounds containing five-membered rings having one sulfur atom as the only ring hetero atom not condensed with other rings substituted on the ring sulfur atom
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/114—Initiator containing
    • Y10S430/115—Cationic or anionic
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/114—Initiator containing
    • Y10S430/122—Sulfur compound containing
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/114—Initiator containing
    • Y10S430/122—Sulfur compound containing
    • Y10S430/123—Sulfur in heterocyclic ring

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Materials For Photolithography (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Heterocyclic Compounds Containing Sulfur Atoms (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
PCT/JP2001/006325 2000-07-25 2001-07-23 Generateurs de photo-acide, compositions de resine photosensible contenant ces generateurs de photo-acide et procede de gravure faisant appel a ces compositions WO2002008833A1 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
US10/333,579 US6849384B2 (en) 2000-07-25 2001-07-23 Photoacid generators, photoresist compositions containing the same and pattering method with the use of the compositions
KR1020037000975A KR100547594B1 (ko) 2000-07-25 2001-07-23 광산발생제, 이를 함유한 포토레지스트조성물, 및 이조성물을 이용한 패턴형성방법

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2000-224661 2000-07-25
JP2000224661A JP3386041B2 (ja) 2000-07-25 2000-07-25 光酸発生剤及びそれを含有するフォトレジスト組成物、並びに該組成物を用いたパターン形成方法

Publications (1)

Publication Number Publication Date
WO2002008833A1 true WO2002008833A1 (fr) 2002-01-31

Family

ID=18718582

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2001/006325 WO2002008833A1 (fr) 2000-07-25 2001-07-23 Generateurs de photo-acide, compositions de resine photosensible contenant ces generateurs de photo-acide et procede de gravure faisant appel a ces compositions

Country Status (4)

Country Link
US (1) US6849384B2 (ja)
JP (1) JP3386041B2 (ja)
KR (1) KR100547594B1 (ja)
WO (1) WO2002008833A1 (ja)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4048824B2 (ja) * 2002-05-09 2008-02-20 Ｊｓｒ株式会社 感放射線性樹脂組成物
JP2004334060A (ja) 2003-05-12 2004-11-25 Shin Etsu Chem Co Ltd 化学増幅型レジスト用光酸発生剤及びそれを含有するレジスト材料並びにパターン形成方法
JP4040536B2 (ja) * 2003-06-11 2008-01-30 東京応化工業株式会社 ネガ型レジスト組成物、及びそれを用いたレジストパターン形成方法
JP4667945B2 (ja) * 2005-04-20 2011-04-13 東京応化工業株式会社 ポジ型レジスト組成物およびレジストパターン形成方法
US8685616B2 (en) * 2008-06-10 2014-04-01 University Of North Carolina At Charlotte Photoacid generators and lithographic resists comprising the same
JP5824823B2 (ja) * 2010-03-26 2015-12-02 住友化学株式会社 塩及びレジスト組成物
JP5386527B2 (ja) * 2011-02-18 2014-01-15 富士フイルム株式会社 パターン形成方法、感活性光線性又は感放射線性樹脂組成物、及びレジスト膜
WO2012125401A1 (en) * 2011-03-11 2012-09-20 Fujifilm Electronic Materials U.S.A., Inc. Novel etching composition
TWI577834B (zh) 2011-10-21 2017-04-11 富士軟片電子材料美國股份有限公司 新穎的鈍化組成物及方法
JP5894802B2 (ja) * 2012-01-10 2016-03-30 東京応化工業株式会社 レジスト組成物、及びレジストパターン形成方法
US8709277B2 (en) 2012-09-10 2014-04-29 Fujifilm Corporation Etching composition
JP6249664B2 (ja) * 2013-07-31 2017-12-20 東京応化工業株式会社 レジスト組成物、酸発生剤、及びレジストパターン形成方法
US10662274B2 (en) 2016-12-02 2020-05-26 Georgia Tech Research Corporation Self-immolative polymers, articles thereof, and methods of making and using same

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2000011041A1 (en) * 1998-08-21 2000-03-02 Ciba Specialty Chemicals Holding Inc. Thermal- and photoinitiated radical polymerization in the presence of an addition fragmentation agent
JP2000122296A (ja) * 1998-08-04 2000-04-28 Shipley Co Llc フォトレジスト組成物、その方法及びそれらを含有してなる工業製品

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3426046A (en) * 1965-10-22 1969-02-04 Dow Chemical Co Synthesis of epoxides from allylic sulfonium salts
JP2578646B2 (ja) 1988-07-18 1997-02-05 三洋電機株式会社 非水系二次電池
JP2776204B2 (ja) 1993-07-14 1998-07-16 日本電気株式会社 アルキルスルホニウム塩、遠紫外線露光用感光性樹脂組成物、及びそれを用いたパターン形成方法
JP2606655B2 (ja) 1993-09-20 1997-05-07 日本電気株式会社 感光性化合物および感光性組成物
JP2856116B2 (ja) 1995-01-26 1999-02-10 日本電気株式会社 ビニルモノマー、重合体、フォトレジスト組成物、及びそれを用いたパターン形成方法
JP2964990B2 (ja) 1997-05-07 1999-10-18 日本電気株式会社 橋かけ環式アルキル基を有する光酸発生剤を含有する感光性樹脂組成物、およびそれを用いたパターン形成方法
JP3055617B2 (ja) 1997-08-27 2000-06-26 日本電気株式会社 ネガ型フォトレジスト組成物およびそれを用いたパターン形成方法
JP3042618B2 (ja) 1998-07-03 2000-05-15 日本電気株式会社 ラクトン構造を有する（メタ）アクリレート誘導体、重合体、フォトレジスト組成物、及びパターン形成方法
JP3003680B1 (ja) 1998-08-13 2000-01-31 日本電気株式会社 重合体、これを含有する化学増幅型ネガレジスト及びレジストパターン形成方法
JP3351424B2 (ja) * 1999-12-28 2002-11-25 日本電気株式会社 スルホニウム塩化合物及びレジスト組成物、並びにそれを用いたパターン形成方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000122296A (ja) * 1998-08-04 2000-04-28 Shipley Co Llc フォトレジスト組成物、その方法及びそれらを含有してなる工業製品
WO2000011041A1 (en) * 1998-08-21 2000-03-02 Ciba Specialty Chemicals Holding Inc. Thermal- and photoinitiated radical polymerization in the presence of an addition fragmentation agent

Also Published As

Publication number Publication date
KR100547594B1 (ko) 2006-01-31
JP3386041B2 (ja) 2003-03-10
US6849384B2 (en) 2005-02-01
JP2002040636A (ja) 2002-02-06
KR20030079911A (ko) 2003-10-10
US20030198889A1 (en) 2003-10-23

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