WO2002003473A1 - Anordnung mit p-dotierten und n-dotierten halbleiterschichten sowie verfahren zu deren herstellung - Google Patents
Anordnung mit p-dotierten und n-dotierten halbleiterschichten sowie verfahren zu deren herstellung Download PDFInfo
- Publication number
- WO2002003473A1 WO2002003473A1 PCT/DE2001/002309 DE0102309W WO0203473A1 WO 2002003473 A1 WO2002003473 A1 WO 2002003473A1 DE 0102309 W DE0102309 W DE 0102309W WO 0203473 A1 WO0203473 A1 WO 0203473A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- semiconductor layers
- doped
- doped semiconductor
- arrangement
- arrangement according
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 94
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 11
- 230000015556 catabolic process Effects 0.000 claims abstract description 47
- 230000007704 transition Effects 0.000 claims description 29
- 239000000758 substrate Substances 0.000 claims description 28
- 239000002184 metal Substances 0.000 claims description 14
- 229910052751 metal Inorganic materials 0.000 claims description 14
- 238000000034 method Methods 0.000 claims description 13
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 11
- 229910052710 silicon Inorganic materials 0.000 claims description 11
- 239000010703 silicon Substances 0.000 claims description 11
- 238000000407 epitaxy Methods 0.000 claims description 9
- 238000004544 sputter deposition Methods 0.000 claims description 3
- 235000012431 wafers Nutrition 0.000 claims description 3
- 241000478345 Afer Species 0.000 claims 1
- 230000002441 reversible effect Effects 0.000 description 9
- 230000000694 effects Effects 0.000 description 7
- 238000010586 diagram Methods 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000002800 charge carrier Substances 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 230000002349 favourable effect Effects 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 230000005641 tunneling Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/0814—Diodes only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/866—Zener diodes
Definitions
- the invention relates to an arrangement with P-doped and N-doped semiconductor layers, which has transitions between the P-doped semiconductor layers and the N-doped semiconductor layers, the transitions showing a Zener breakdown when a voltage characteristic of a transition is applied.
- the invention further relates to a method for producing the arrangement according to the invention.
- Zener diodes are used in particular for this purpose. If Zener diodes are operated in reverse or reverse direction, they show a distinctive breakdown behavior with comparatively low breakdown voltages.
- the size of the breakdown voltage of a diode essentially depends on the doping concentration of the semiconductor material. In the case of highly doped diodes, a very narrow barrier layer is formed, so that high electrical field strengths lie above the PN junction even when small reverse voltages are applied. If the field strength exceeds a value in the order of 10 5 V / cm, valence electrons in the region of the almost charge-free PN junction can be torn out of their bonds. In the band model, this effect presents itself as a tunneling of the forbidden band.
- Zener voltage At low voltages below the breakdown voltage, which is also called Zener voltage, only the generally negligible reverse current flows. When the Zener voltage is reached, the current rises sharply due to the charge carrier emission. This prevents a further increase in voltage.
- Zener voltage At breakdown voltages below 4.5 V one speaks of a pure Zener breakdown.
- another breakdown effect competes, namely the so-called avalanche or avalanche breakdown. This predominates at voltages above 7 V and essentially results from avalanche-like impact ionizations in the semiconductor.
- a Zener diode is suitable as a voltage limiter due to the defined and reversible breakdown. If you interconnect two Zener diodes in an antiserial manner - that is, in series, but with opposite polarity - you get symmetrical breakdown behavior.
- FIG. 6 Such a circuit is shown in Figure 6.
- a first Zener diode 110 and a second Zener diode 112 are shown, which are connected in series. Such arrangements are used for voltage limitation if both polarities of the voltage of a voltage applied to the contacts 114, 116 are to be limited.
- Figure 7 shows the corresponding current-voltage characteristic of the circuit shown in Figure ⁇ . In the diagram from FIG. 7, the current flowing through the Zener diodes 110, 112 is plotted against the voltage applied to the contacts 114, 116.
- the breakdown voltage of the arrangement is UZ1 + UF, provided that rail resistances and the rise in breakdown voltage due to self-heating are neglected.
- UZ1 denotes the breakdown voltage of one of the Zener diodes, which in the present case are assumed to be identical, and ÜF the voltage drop of a diode in the forward direction. • However, If you want to interpret for greater border tensions such a voltage limiting circuit, so it comes to the indicated in Figure 7 positive temperature coefficient of the breakdown voltage.
- FIG. 7 shows a solid line at room temperature (RT) and a broken line at high temperature (HT).
- RT room temperature
- HT high temperature
- the invention is based on the ⁇ generic arrangement according to claim 1 characterized in that a plurality of over- addressed doped between P-type semiconductor layers and n-type semiconductor layers is present and that the characteristic voltages additive in the breakdown voltage of the whole assembly received. It is therefore no longer necessary to use two separate components in order to limit the voltage for both polarities of the voltage. Rather, a single arrangement with a plurality of transitions between P-doped semiconductor layers and N-doped semiconductor layers can provide a voltage limitation of both polarities.
- the characteristic voltages of the transitions are additively included in the breakdown voltage of the entire arrangement, it is possible to select the individual breakdown voltages as low and still limit them to one by adding the individual breakdown voltages to cause comparatively high voltage. Since the Zener effect dominates at the small characteristic voltages of the individual transitions, which may be 4.2 V, for example, i.e. the avalanche breakdown does not play a role or only plays a minor role, despite the high limit voltage provided, a practically temperature-independent characteristic curve can be used Will be provided.
- the semiconductor layers are preferably highly doped. A high doping leads to a low breakthrough Voltage and thus to the desired temperature independence of the device.
- the semiconductor layers have constant doping. This offers itself in the sense of simple manufacture. Furthermore, the breakdown voltage can be calculated in a simple manner on the basis of the identical properties of the transitions between the layers with constant doping.
- the P-doped semiconductor layers and the N-doped semiconductor layers are doped with the same concentration. This results in a uniform formation of the depletion zone both in the N-doped semiconductor layers and in the P-doped semiconductor layers. This allows the layer sequence to be designed uniformly.
- the P-doped semiconductor layers form at least two groups that are doped with different concentrations. In this way, it is possible to obtain a characteristic curve that is asymmetrical with respect to the voltage polarity, unlike in the case of uniform doping of all P semiconductor layers or of all N semiconductor layers, where a symmetrical characteristic curve is present. Different voltage limits can thus be provided depending on the polarity of the voltage.
- the N-doped semiconductor layers have at least two groups form, which are doped with different concentrations.
- the semiconductor layers prefferably be arranged on an N-doped substrate.
- the semiconductor layers can be arranged on a P-doped substrate. Consequently, no particular doping of the substrate is required, which means that the arrangement is flexible with regard to manufacture and use.
- the type of doping of the semiconductor layer furthest from the substrate corresponds to the type of doping of the substrate.
- the type of doping of the semiconductor layer furthest from the substrate is different than the type of doping of the substrate.
- one is flexible with regard to the manufacture and the areas of application of the arrangement and is not restricted to a specific type of doping of the outermost semiconductor layers.
- the semiconductor layers have a thickness of approximately 4 ⁇ m. Such a thickness is suitable for the practical breakdown voltages of the individual transitions and the associated thicknesses of the depletion zones, that is to say it is sufficiently high. The corresponding thickness prevents the minority charge carriers injected through the transitions polarized in the direction of flow from entering a space charge zone. reach a neighboring transition that is in reverse polarity. This is absolutely necessary, otherwise the entire arrangement would be "ignited" (thyristor effect).
- the substrate is about 500 microns thick. Adequate mechanical stability is ensured, among other things, by such a substrate thickness.
- the concentration of the doping is preferably in the range of 2 ⁇ 10 19 atoms / cm 3 . With such a high doping concentration, a Zener effect is obtained in every transition at the desired low Zener voltage and thus with a correspondingly low temperature dependence.
- the arrangement preferably has metal contacts on its top and bottom that are extend over their entire area.
- the arrangement is thus prepared for further processing, as is usually the case with semiconductor components.
- the semiconductor layers are preferably silicon layers.
- the high doping and the desired layer structure can be realized in a particularly favorable manner with silicon.
- the invention further consists, according to claim 17, in a method for producing an arrangement with P-doped and N-doped semiconductor layers, which has transitions between the P-doped semiconductor layers and the N-doped semiconductor layers, the transitions when applying a characteristic of a transition Voltage show a Zener breakdown, there are a plurality of transitions between P-doped semiconductor layers and N-doped semiconductor layers, and the characteristic voltages additively enter into the breakdown voltage of the entire arrangement, the method comprising the application of the semiconductor layers by epitaxy.
- Epitaxy is a particularly suitable method for building up layer arrangements which make up the present invention.
- the epitaxy preferably takes place at approximately 1180 ° C. This temperature has proven to be particularly favorable for an error-free layer formation.
- the epitaxy occurs at a growth rate of approximately 4 ⁇ m / min. This ensures a high quality layer structure, whereby the manufacturing process is of sufficient speed.
- Metal contacts are preferably sputtered onto the top and bottom of the arrangement.
- the arrangement is prepared for further processing by means of these metal contacts, which preferably cover the entire upper side and the entire lower side of the arrangement.
- the sputtering method has proven to be particularly reliable for the application of thin metal layers.
- the arrangement is preferably divided into individual chips after the metal contacts have been sputtered on.
- a silicon substrate initially used could have a diameter of 125 mm.
- the chips resulting from the method, which are produced, for example, using a circular saw, can then have an area of 20 mm 2 , for example.
- the edges of the chips are removed. If the chips are produced, for example, by a sawing process, crystal disturbances occur at the edge of the chip, which have a negative effect on the electrical properties of the component. This disturbed semiconductor area at the edge of the chip is then removed, for example, to a depth of approximately 50 ⁇ m. This can be achieved, for example, by etching in KOH. The etching often only takes place when the front and back of the chip have been soldered into a copper housing. The further packaging is then carried out in a manner customary in diode technology. In addition to the structure of the layer arrangement by epitaxy, it is also possible to join thin silicon wafers using wafer bonds. So you are variable in terms of production.
- the invention is based on the surprising finding that it is possible with a corresponding layer arrangement of P-doped and N-doped semiconductor layers to provide bipolar voltage limitation with negligible temperature dependence.
- the breakdown voltage of individual PN junctions can be selected by suitable doping so that a practically pure Zener breakdown takes place.
- Figure 1 shows schematically a cross section of an arrangement according to the invention
- FIG. 2 shows a characteristic curve of an arrangement according to FIG. 1
- FIG. 3 shows a doping profile of an arrangement according to FIG. 1;
- Figure 4 shows schematically a cross section of a further embodiment of an arrangement according to the invention.
- FIG. 5 shows a characteristic curve of an arrangement according to FIG. 4
- Figure 6 shows a circuit of the prior art
- FIG. 7 shows a characteristic curve of the arrangement according to FIG. 6.
- Figure 1 shows schematically a cross section of an arrangement according to the invention.
- a plurality of P-doped semiconductor layers 12 and N-doped semiconductor layers 14 are arranged on an N-doped silicon substrate 10.
- a plurality of semiconductor junctions are present between the P-doped semiconductor layers 12 and the N-doped semiconductor layers 14.
- the P-doped semiconductor layers 12 have a thickness TP, while the N-doped semiconductor layers have a thickness TN.
- the thicknesses TP and TN ' are approximately equal and are approximately 4 ⁇ .
- the substrate has a thickness TS of approximately 525 ⁇ m in the present example.
- the total thickness of the arrangement results from this information. T to 605 ⁇ m.
- silicon is chosen as the semiconductor.
- the semiconductor layers 12, 14 each have a constant doping of approximately 2 ⁇ 10 19 atoms / cm 3 .
- Layers 12, 14 were applied to the layer below by epitaxes. In a preferred embodiment, the epitaxy takes place in such a way that a temperature of 1180 ° C.
- the layer arrangement is selected such that the top layer and the bottom layer (substrate) have the same doping type, in the present case an N doping.
- the two outer comprise 'semiconductor layers, a P-type doping.
- the outer layers can be of different doping types, both for an N substrate and for a P substrate.
- FIG. 2 shows in simplified form a characteristic curve of the arrangement from FIG. 1. If a voltage U, which is positive in comparison to electrode 16, is applied to the metal electrode 18, no current flows except for a relatively small reverse current until the reverse voltage UZ is reached. If an attempt is made to increase the voltage U even further, the current through the arrangement rises sharply due to the zener breakdowns in the individual transitions between the semiconductor layers. Since the arrangement is symmetrical, the same electrical behavior occurs when the polarity of the applied voltage U is reversed with the opposite sign. For n P-doped epitaxial layers and n N-doped epitaxial layers, the breakdown voltage UZ is:
- UZ1 is the breakdown voltage of a single junction
- UF is the forward voltage of a single PN diode.
- the solid line in Figure 2 shows the current-voltage behavior of the arrangement at room temperature (RT).
- the broken line shows the behavior at a high temperature (HT). It can be seen that up to very high currents there is practically no influence on the characteristic curve due to the temperature. Only at very high current densities, for example in the range above 200 A / cm 2 , is there again a non-negligible positive temperature coefficient.
- FIG. 3 shows the doping profile of the arrangement from FIG. 1, the number density of the doping atoms N being plotted against the location x.
- the solid lines indicate N-doped silicon.
- the dotted lines indicate P-doped silicon.
- the left side of the diagram in FIG. 3 corresponds to the N-doped silicon layer from FIG. 1, which adjoins the metal electrode 18, while the right side of the diagram in FIG. 3 corresponds to the substrate 10 from FIG. 1, which extends from the metal electrode 16 Figure 1 is adjacent. It can be seen that there is a constant doping concentration of 2 ⁇ 10 19 atoms / cm 3 .
- FIG. 4 schematically shows a cross section of a further embodiment of an arrangement according to the invention, which likewise results in voltage limitation with any voltage polarity.
- FIG. 1 has a symmetrical characteristic curve with regard to the polarity of the applied voltage.
- FIG. 4 achieves an asymmetrical characteristic curve.
- the special feature of this arrangement is that there are two types of P-doped semiconductor layers.
- a first P-doped semiconductor layer 20 has a lower doping concentration than a second P ⁇ -doped semiconductor layer 22.
- the doping concentration of the N semiconductor layers is uniform. This gives diodes with different
- Breakdown voltages corresponding to the transitions N (P + P) or (P + P) N. If the diodes are loaded in the reverse direction, the breakdown voltage UZl is the
- the arrangement according to FIG. 4 is also with regard to the outermost semiconductor layers and with regard to the Animal types principally variable.
- a P substrate can also be used instead of an N substrate. Accordingly, higher doped N + layers and less highly doped N layers would be used for a P substrate.
- the outermost layers of the semiconductor arrangement can in turn match or differ with regard to the doping type.
- FIG. 5 shows a characteristic curve of an arrangement according to FIG. 4. With suitable dimensions, both with regard to the geometry and with regard to the concentrations, characteristic curves that are practically independent of temperature are obtained again, which is shown in FIG. 5.
- Figure 5 corresponds in its basic structure to Figure 2, but here the asymmetrical characteristic curve is decisive.
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Semiconductor Integrated Circuits (AREA)
- Electrodes Of Semiconductors (AREA)
- Bipolar Integrated Circuits (AREA)
- Bipolar Transistors (AREA)
Abstract
Description
Claims
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
AU78366/01A AU781754B2 (en) | 2000-07-05 | 2001-06-22 | Arrangement with P-doped and N-doped semiconductor layers and method for producing the same |
US10/070,521 US7170104B2 (en) | 2000-07-05 | 2001-06-22 | Arrangement with p-doped and n-doped semiconductor layers and method for producing the same |
EP01956284A EP1203409A1 (de) | 2000-07-05 | 2001-06-22 | Anordnung mit p-dotierten und n-dotierten halbleiterschichten sowie verfahren zu deren herstellung |
JP2002507454A JP2004503092A (ja) | 2000-07-05 | 2001-06-22 | P型ドープされた半導体層とn型ドープされた半導体層とを備えたデバイス、およびこのデバイスの製造方法 |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE10032543A DE10032543A1 (de) | 2000-07-05 | 2000-07-05 | Anordnung mit P-dotierten und N-dotierten Halbleiterschichten sowie Verfahren zu deren Herstellung |
DE10032543.2 | 2000-07-05 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2002003473A1 true WO2002003473A1 (de) | 2002-01-10 |
Family
ID=7647788
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/DE2001/002309 WO2002003473A1 (de) | 2000-07-05 | 2001-06-22 | Anordnung mit p-dotierten und n-dotierten halbleiterschichten sowie verfahren zu deren herstellung |
Country Status (7)
Country | Link |
---|---|
US (1) | US7170104B2 (de) |
EP (1) | EP1203409A1 (de) |
JP (1) | JP2004503092A (de) |
AU (1) | AU781754B2 (de) |
DE (1) | DE10032543A1 (de) |
TW (1) | TW512538B (de) |
WO (1) | WO2002003473A1 (de) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2953062B1 (fr) * | 2009-11-24 | 2011-12-16 | St Microelectronics Tours Sas | Diode de protection bidirectionnelle basse tension |
Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3015762A (en) * | 1959-03-23 | 1962-01-02 | Shockley William | Semiconductor devices |
GB1176088A (en) | 1951-01-28 | 1970-01-01 | Itt | Temperature Compensated Zener Diode. |
US3953254A (en) * | 1972-11-07 | 1976-04-27 | Thomson-Csf | Method of producing temperature compensated reference diodes utilizing selective epitaxial growth |
US4040171A (en) * | 1975-04-17 | 1977-08-09 | General Electric Company | Deep diode zeners |
US4200877A (en) * | 1976-12-23 | 1980-04-29 | Hitachi, Ltd. | Temperature-compensated voltage reference diode with intermediate polycrystalline layer |
JPS5821374A (ja) * | 1981-07-29 | 1983-02-08 | Toshiba Corp | 半導体装置 |
US4554568A (en) * | 1981-06-30 | 1985-11-19 | Commissariat A L'energie Atomique | Temperature-compensated Zener diode |
JPH03195054A (ja) | 1989-12-25 | 1991-08-26 | Fuji Electric Co Ltd | 定電圧ダイオード半導体装置 |
US5973359A (en) * | 1997-11-13 | 1999-10-26 | Fuji Electric Co., Ltd. | MOS type semiconductor device |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US597359A (en) * | 1898-01-11 | George e | ||
US3263092A (en) * | 1963-09-12 | 1966-07-26 | Dickson Electronics Corp | Low impedance voltage regulating circuit |
US3416046A (en) * | 1965-12-13 | 1968-12-10 | Dickson Electronics Corp | Encased zener diode assembly and method of producing same |
US4040170A (en) * | 1975-05-27 | 1977-08-09 | Westinghouse Electric Corporation | Integrated gate assisted turn-off, amplifying gate thyristor, and a method for making the same |
-
2000
- 2000-07-05 DE DE10032543A patent/DE10032543A1/de not_active Withdrawn
-
2001
- 2001-06-22 WO PCT/DE2001/002309 patent/WO2002003473A1/de active IP Right Grant
- 2001-06-22 AU AU78366/01A patent/AU781754B2/en not_active Ceased
- 2001-06-22 EP EP01956284A patent/EP1203409A1/de not_active Ceased
- 2001-06-22 US US10/070,521 patent/US7170104B2/en not_active Expired - Fee Related
- 2001-06-22 JP JP2002507454A patent/JP2004503092A/ja not_active Withdrawn
- 2001-06-29 TW TW090115911A patent/TW512538B/zh not_active IP Right Cessation
Patent Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB1176088A (en) | 1951-01-28 | 1970-01-01 | Itt | Temperature Compensated Zener Diode. |
US3015762A (en) * | 1959-03-23 | 1962-01-02 | Shockley William | Semiconductor devices |
US3953254A (en) * | 1972-11-07 | 1976-04-27 | Thomson-Csf | Method of producing temperature compensated reference diodes utilizing selective epitaxial growth |
US4040171A (en) * | 1975-04-17 | 1977-08-09 | General Electric Company | Deep diode zeners |
US4200877A (en) * | 1976-12-23 | 1980-04-29 | Hitachi, Ltd. | Temperature-compensated voltage reference diode with intermediate polycrystalline layer |
US4554568A (en) * | 1981-06-30 | 1985-11-19 | Commissariat A L'energie Atomique | Temperature-compensated Zener diode |
JPS5821374A (ja) * | 1981-07-29 | 1983-02-08 | Toshiba Corp | 半導体装置 |
JPH03195054A (ja) | 1989-12-25 | 1991-08-26 | Fuji Electric Co Ltd | 定電圧ダイオード半導体装置 |
US5973359A (en) * | 1997-11-13 | 1999-10-26 | Fuji Electric Co., Ltd. | MOS type semiconductor device |
Non-Patent Citations (2)
Title |
---|
PATENT ABSTRACTS OF JAPAN vol. 007, no. 099 (E - 172) 27 April 1983 (1983-04-27) * |
PATENT ABSTRACTS OF JAPAN vol. 015, no. 454 (E - 1135) 19 November 1991 (1991-11-19) * |
Also Published As
Publication number | Publication date |
---|---|
DE10032543A1 (de) | 2002-01-17 |
JP2004503092A (ja) | 2004-01-29 |
AU7836601A (en) | 2002-01-14 |
TW512538B (en) | 2002-12-01 |
US20020179924A1 (en) | 2002-12-05 |
AU781754B2 (en) | 2005-06-09 |
US7170104B2 (en) | 2007-01-30 |
EP1203409A1 (de) | 2002-05-08 |
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