WO2001090449A1 - Procede de croissance de cristaux uniques - Google Patents

Procede de croissance de cristaux uniques Download PDF

Info

Publication number
WO2001090449A1
WO2001090449A1 PCT/IL2001/000476 IL0100476W WO0190449A1 WO 2001090449 A1 WO2001090449 A1 WO 2001090449A1 IL 0100476 W IL0100476 W IL 0100476W WO 0190449 A1 WO0190449 A1 WO 0190449A1
Authority
WO
WIPO (PCT)
Prior art keywords
substrate
crater
interior
amorphous
portion located
Prior art date
Application number
PCT/IL2001/000476
Other languages
English (en)
Inventor
Moshe Einav
Original Assignee
Nanogate Ltd.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nanogate Ltd. filed Critical Nanogate Ltd.
Priority to AU62622/01A priority Critical patent/AU6262201A/en
Publication of WO2001090449A1 publication Critical patent/WO2001090449A1/fr

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B19/00—Liquid-phase epitaxial-layer growth
    • C30B19/12—Liquid-phase epitaxial-layer growth characterised by the substrate
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/18—Epitaxial-layer growth characterised by the substrate

Definitions

  • This invention is in the field of crystals manufacturing techniques and relates to a method for growing single crystals.
  • Crystals due to their specific geometry pattern and physical properties are widely used in electronics, in particular semiconductor devices, such as transistors, diodes, thyristors, photodiodes, and integrated circuits. Crystals are characterized by a regular manner arrangement of their atoms or molecules, the values of certain physical properties depending on the direction in which they are measured. When formed freely, a crystalline mass is bounded by plane surfaces (faces) intersecting at definite angles.
  • a mono-crystal structure in such a device.
  • the commonly used technique for growing mono-crystals on substrates is the epitaxy, according to which a thin crystalline layer is grown on a substrate by means of depositing atoms of the layer material onto the substrate at high temperature, and the crystalline orientation of the deposited layer is the same as that of the substrate.
  • the atoms of silicon should be deposited onto a silicon substrate.
  • Various techniques for growing polysilicon films on Si0 2 have been developed.
  • One of the known techniques utilizes the deposition of an ultra-thin microcrystalline-Si seed layer onto a Si0 2 substrate. During the deposition of a poly-Si thin film, this intermediate film provides nucleation sites at which poly-Si film growth can be initiated. This is disclosed in the following article: "Low Temperature (450°C) Poly-Si Thin Film Deposition on Si02 and Glass Using a Microcrystalline Si Seed Layer", David M. Wolfe et al, North Carolina State University, Dept. of Physics, Raleigh, NC; Material Research Society (MRS), Spring Meeting, 1997. Another technique is disclosed in the article "Selective Nucleation/Solid
  • thermal annealing of amorphous silicon film on Al-coated substrate is used. This is disclosed in the article “Rapid Thermal Annealing Crystallization of High Rate Deposited Amorphous Silicon Films Enhanced by Al Coating on Substrate ", Kuixun Lin et al, Amorphous Semiconductor Laboratory, Shantou Univ., Shantou, Guangdong, P.H. China; Material Research Society (MRS), Spring Meeting, 1999; and
  • the main idea of the present invention consists of growing one or more mono-crystal structures on an amorphous substrate (e.g., plastic, glass, etc.). This is implemented by fabricating suitably shaped microenvironment for depositing therein a material to be crystallized.
  • the deposition process may utilize Liquid Phase Epitaxy, Chemical Vapor Deposition (CVD), Physical Vapor Deposition (PVD), e.g., Molecular Beam Epitaxy (MBE), or suitable variations of these techniques.
  • the suitably shaped microenvironment according to the invention actually presents a support groove or crater formed in the amorphous substrate for receiving the deposited material for a corresponding single-crystal structure.
  • the special shape of the crater enables to obtain the single-crystal structure.
  • the crater is shaped like a cone having a substantially V- or U-shaped cross-section.
  • the base of such a cone-like crater is located at the surface of the amorphous substrate, and its tip-like portion is located within the interior of the substrate.
  • tip portion signifies that end portion of the crater whose diameter is smaller than that of the opposite end portion, and which is located within the interior of the substrate.
  • lithography-and-etching technique can be used. After the crystallization of the deposited material, the upper surface of the resulting structure (i.e., substrate with the deposited material in the crater or craters) is polished (by chemical or plasma techniques).
  • the crater may have a substantially U-shaped cross section, or a substantially V-shaped cross section having a tip-like lower end portion.
  • the surface of the structure obtained in step (iii) is then planarized.
  • a three-dimensional device containing at least a pair of vertically arranged single-crystal structures can be obtained by repeating steps (i) to (iii) on top of the lowermost planarized structure.
  • an array e.g., two-dimensional
  • spaced-apart craters is fabricated in the substrate and filled with the deposited material to form an array of spaced-apart single-crystal structures.
  • the present invention provides a method of manufacturing a poly-crystalline film on the surface of an amorphous substrate.
  • a single-crystal stracture wherein the structure is grown in a crater made in an amorphous substrate, the crater extending from the surface of the substrate towards its interior, such that a cross sectional area of the crater is continuously reduced from its upper portion located at the surface of the substrate towards its lower portion located in the interior of the substrate.
  • a stracture comprising an amorphous substrate and an array of spaced-apart single-crystal structures formed in said substrate, each of the single-crystal structures being grown in a crater made in said amorphous substrate, the crater extending from the surface of the substrate towards its interior, such that a cross sectional area of the crater is continuously reduced from its upper portion located at the surface of the substrate towards its lower portion located in the interior of the substrate.
  • a device comprising at least two vertically arranged structures each constructed as described above.
  • Figs. 1A and IB illustrates one possible example of a crater design used for growing a single-crystal therein;
  • Figs. 2A and 2B illustrates another example of the crater design used for growing a single-crystal therein;
  • FIG. 3 A and 3B illustrates yet another example of the crater design used for growing a single-crystal therein;
  • Figs. 4 and 5 schematically illustrate simultaneous manufacture of an array of single-crystal structures;
  • Fig. 6 illustrates the principles of manufacturing a multi-layer device utilizing the stracture of Figs. 4 and 5; and Fig. 7 illustrates how the present invention can be used for manufacturing a poly-crystalline film on the surface of an amorphous substrate
  • the present invention provides a technique for growing a single-crystal stracture in a crater made in an amorphous substrate.
  • a crater 1 is made in amorphous substrate 2
  • the crater 1 extends from the surface 2a of the substrate 2 such that a cross sectional area of the crater is continuously reduced from its upper portion la located at the surface of the substrate towards its lower portion lb located in the interior of the substrate.
  • d ⁇ >d 2 .
  • the crater 1 has a tip-end. Referring to Figs. 2 A and 2B there is illustrated another example of a crater
  • the crater has a U-shaped cross section with the upper and lower diameters d 1 and d , respectively, such that d ⁇ >d 2 .
  • Figs. 3A and 3B illustrate yet another example of a crater 20, which also has a U-shaped cross-section, and a similar relation between its upper and lower diameters di and d , respectively.
  • the crater may be shaped like a pyramid having a polygon-geometry base.
  • Fig. 4 illustrates a structure 30 composed of the amorphous substrate 2, which is formed with a two-dimensional array of spaced-apart single-crystal stractures, generally at 32.
  • Each stracture 32 is a crater formed in the substrate 2 and containing a material to be crystallized.
  • the surface of the substrate is patterned (e.g., by lithography-and-etching) to create the craters 34.
  • a Liquid Phase Epitaxy, CVD, PVD (e.g., MBE), etc. is applied to deposit the material to be crystallized 36 (e.g. semiconductor, piezoelectric, etc.) into the craters 34.
  • CVD or PVD processes the deposition can be carried out at substantially room temperature with the appropriate vacuum conditions.
  • a single silicon crystal can be grown inside the crater with the lower portion of a 0.5 ⁇ m-diameter during 0.5 hour.
  • the deposition procedure is typically followed by a polishing procedure (such as Chemical Mechanical Planarization or Ion Planarization) so as to remove the residuals of the deposited material from the substrate surface within the spaces between the craters.
  • a polishing procedure such as Chemical Mechanical Planarization or Ion Planarization
  • Fig. 6 there is illustrated how a three dimensional array of single-crystals can be fabricated using the stracture of Figs. 4 and 5. To this end, the surface of the previously obtained stracture 30 is polished. Then, a new substrate layer 40 is deposited thereon, and is processed in a manner described above to fabricate a further two-dimensional array of spaced-apart single-crystal stractures, generally at 42.
  • a stracture 50 composed of the amorphous substrate 2 formed with the array of spaced-apart craters 1, and a poly-crystalline film 52 on the surface of the substrate.
  • Each crater 1 presents a center of nucleation.
  • the structure 50 is manufactured in the following manner. The material to be crystallized is deposited into the craters as described above, and grows throughout the craters so as to form a thin layer on the surface of the substrate. The so-obtained poly-crystalline film has a regular structure of its single-crystals.
  • the substrate in which crater or craters are formed, can be made of any amorphous material.
  • the shape of the crater may be a cone, a so-called truncated cone having, respectively, a V-shaped or U-shaped cross section.
  • the crater may be shaped like a pyramid.
  • the material to be deposited may be any atomic or molecular crystallizable material that can be used for fabricating semi- or super-conductive materials, piezoelectric materials, as well as thermo-electric and optically active materials.

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Recrystallisation Techniques (AREA)

Abstract

L'invention porte sur un procédé de fabrication de structures à cristaux uniques. Un substrat amorphe est formé au moyen d'une matrice de cratères espacés. Chaque cratère s'étend de la surface du substrat vers l'intérieur de celui-ci, une zone transversale diminuant en continu de la partie supérieure du cratère situé au niveau de la surface du substrat jusqu'à sa partie inférieure suitée à l'intérieur du substrat. Un matériau cristallisable atomique ou moléculaire est ensuite déposé dans les cratères.
PCT/IL2001/000476 2000-05-25 2001-05-24 Procede de croissance de cristaux uniques WO2001090449A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
AU62622/01A AU6262201A (en) 2000-05-25 2001-05-24 A method for growing single crystals

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GB0012797.7 2000-05-25
GB0012797A GB2362754A (en) 2000-05-25 2000-05-25 A method of growing single crystals

Publications (1)

Publication Number Publication Date
WO2001090449A1 true WO2001090449A1 (fr) 2001-11-29

Family

ID=9892402

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/IL2001/000476 WO2001090449A1 (fr) 2000-05-25 2001-05-24 Procede de croissance de cristaux uniques

Country Status (3)

Country Link
AU (1) AU6262201A (fr)
GB (1) GB2362754A (fr)
WO (1) WO2001090449A1 (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2014151146A1 (fr) * 2013-03-15 2014-09-25 Denovx, Llc Nucléation dirigée et croissance cristalline dirigée à partir d'une solution à l'aide de matières amorphes à énergie de surface modifiée

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0113954A1 (fr) * 1982-11-17 1984-07-25 Yoshihiro Hamakawa Substrat pour la fabrication d'une couche mince monocristalline
EP0241316A2 (fr) * 1986-04-11 1987-10-14 Canon Kabushiki Kaisha Procédé pour former une couche déposée cristalline
EP0365166A1 (fr) * 1988-10-02 1990-04-25 Canon Kabushiki Kaisha Objet en cristal et procédé pour sa fabrication
JPH0686089A (ja) * 1992-03-09 1994-03-25 Meisho Chin モニターにおける水平走査の線形歪み補償方法とその補償コイル
JPH0686093A (ja) * 1991-12-31 1994-03-25 Samsung Electron Co Ltd 映像信号の奇数／偶数フィールド検出装置
US5395481A (en) * 1993-10-18 1995-03-07 Regents Of The University Of California Method for forming silicon on a glass substrate

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3580732A (en) * 1968-01-15 1971-05-25 Ibm Method of growing single crystals
US5264722A (en) * 1992-06-12 1993-11-23 The United States Of America As Represented By The Secretary Of The Navy Nanochannel glass matrix used in making mesoscopic structures
AU7082596A (en) * 1995-07-28 1997-02-26 Forschungsverbund Berlin E.V. Method of producing crystalline layers

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0113954A1 (fr) * 1982-11-17 1984-07-25 Yoshihiro Hamakawa Substrat pour la fabrication d'une couche mince monocristalline
EP0241316A2 (fr) * 1986-04-11 1987-10-14 Canon Kabushiki Kaisha Procédé pour former une couche déposée cristalline
EP0365166A1 (fr) * 1988-10-02 1990-04-25 Canon Kabushiki Kaisha Objet en cristal et procédé pour sa fabrication
JPH0686093A (ja) * 1991-12-31 1994-03-25 Samsung Electron Co Ltd 映像信号の奇数／偶数フィールド検出装置
JPH0686089A (ja) * 1992-03-09 1994-03-25 Meisho Chin モニターにおける水平走査の線形歪み補償方法とその補償コイル
US5395481A (en) * 1993-10-18 1995-03-07 Regents Of The University Of California Method for forming silicon on a glass substrate

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
KUMONI H ET AL: "SELECTIVE NUCLEATION-BASED EPITAXY (SENTAXY): A NOVEL APPROACH FOR THIN FILM FORMATION", JAPANESE JOURNAL OF APPLIED PHYSICS, PUBLICATION OFFICE JAPANESE JOURNAL OF APPLIED PHYSICS. TOKYO, JP, vol. 36, no. 3B, PART 1, 1 March 1997 (1997-03-01), pages 1383 - 1388, XP000703066, ISSN: 0021-4922 *
PATENT ABSTRACTS OF JAPAN vol. 1999, no. 07 31 March 1999 (1999-03-31) *

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2014151146A1 (fr) * 2013-03-15 2014-09-25 Denovx, Llc Nucléation dirigée et croissance cristalline dirigée à partir d'une solution à l'aide de matières amorphes à énergie de surface modifiée
US9193664B2 (en) 2013-03-15 2015-11-24 Denovx, Llc Directed nucleation and crystal growth from solution using surface energy modified amorphous materials
JP2016517387A (ja) * 2013-03-15 2016-06-16 デノブクス，エルエルシー 表面エネルギーを改質した非晶質を使用した溶液からの意図された核形成及び結晶成長
EP2969093A4 (fr) * 2013-03-15 2016-12-21 Denovx Llc Nucléation dirigée et croissance cristalline dirigée à partir d'une solution à l'aide de matières amorphes à énergie de surface modifiée

Also Published As

Publication number Publication date
GB0012797D0 (en) 2000-07-19
AU6262201A (en) 2001-12-03
GB2362754A (en) 2001-11-28

Similar Documents

Publication Publication Date Title
JPS63107016A (ja) 結晶の形成方法
JP2662396B2 (ja) 結晶性堆積膜の形成方法
WO2012015877A2 (fr) Croissance latérale confinée d'un matériau cristallin
US5447117A (en) Crystal article, method for producing the same and semiconductor device utilizing the same
KR100299784B1 (ko) 요철상폴리실리콘층의형성방법및이방법의실시에사용되는기판처리장치와반도체메모리디바이스
CN101019214A (zh) 制造结晶硅的方法
US8445332B2 (en) Single crystal silicon rod fabrication methods and a single crystal silicon rod structure
CA1337170C (fr) Methode pour l'obtention de pellicule cristallisee sous forme de depot
EP1955365A1 (fr) Procede de fabrication d'un film mince de silicium polycristallin
JP2660064B2 (ja) 結晶物品及びその形成方法
JPH04180219A (ja) 結晶の形成方法
WO2001090449A1 (fr) Procede de croissance de cristaux uniques
JPH02260523A (ja) 結晶の形成方法および結晶物品
US20090246460A1 (en) Structure And Method For Forming Crystalline Material On An Amorphous Structure
JPH01132116A (ja) 結晶物品及びその形成方法並びにそれを用いた半導体装置
JP4665488B2 (ja) Ｇｅ微結晶核付き基板の作製方法
US5582641A (en) Crystal article and method for forming same
JPH02191321A (ja) 結晶の形成方法
JP2592834B2 (ja) 結晶物品およびその形成方法
Sedky et al. Pulsed laser annealing of silicon-germanium films
JPH01149483A (ja) 太陽電池
JP2001176796A (ja) 半導体膜の形成方法および半導体装置
JP2615629B2 (ja) 半導体装置の製造方法
JPH01149418A (ja) 電子素子用基板及びその製造方法
JPH01132117A (ja) 結晶の成長方法

Legal Events

Date Code Title Description
AK Designated states

Kind code of ref document: A1

Designated state(s): AE AG AL AM AT AU AZ BA BB BG BR BY BZ CA CH CN CO CR CU CZ DE DK DM DZ EC EE ES FI GB GD GE GH GM HR HU ID IL IN IS JP KE KG KP KR KZ LC LK LR LS LT LU LV MA MD MG MK MN MW MX MZ NO NZ PL PT RO RU SD SE SG SI SK SL TJ TM TR TT TZ UA UG US UZ VN YU ZA ZW

AL Designated countries for regional patents

Kind code of ref document: A1

Designated state(s): GH GM KE LS MW MZ SD SL SZ TZ UG ZW AM AZ BY KG KZ MD RU TJ TM AT BE CH CY DE DK ES FI FR GB GR IE IT LU MC NL PT SE TR BF BJ CF CG CI CM GA GN GW ML MR NE SN TD TG

121 Ep: the epo has been informed by wipo that ep was designated in this application
REG Reference to national code

Ref country code: DE

Ref legal event code: 8642

32PN Ep: public notification in the ep bulletin as address of the adressee cannot be established

Free format text: NOTING OF LOSS OF RIGHTS PURSUANT TO RULE 69(1) EPC (EPO FORM 1205A DATED 25.03.03

122 Ep: pct application non-entry in european phase
NENP Non-entry into the national phase

Ref country code: JP