GB0012797D0 - A method for growing single crystals - Google Patents

A method for growing single crystals

Info

Publication number
GB0012797D0
GB0012797D0 GB0012797A GB0012797A GB0012797D0 GB 0012797 D0 GB0012797 D0 GB 0012797D0 GB 0012797 A GB0012797 A GB 0012797A GB 0012797 A GB0012797 A GB 0012797A GB 0012797 D0 GB0012797 D0 GB 0012797D0
Authority
GB
United Kingdom
Prior art keywords
single crystals
growing single
growing
crystals
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
GB0012797A
Other versions
GB2362754A (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NANO GATE
Original Assignee
NANO GATE
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NANO GATE filed Critical NANO GATE
Priority to GB0012797A priority Critical patent/GB2362754A/en
Publication of GB0012797D0 publication Critical patent/GB0012797D0/en
Priority to AU62622/01A priority patent/AU6262201A/en
Priority to PCT/IL2001/000476 priority patent/WO2001090449A1/en
Publication of GB2362754A publication Critical patent/GB2362754A/en
Withdrawn legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B19/00—Liquid-phase epitaxial-layer growth
    • C30B19/12—Liquid-phase epitaxial-layer growth characterised by the substrate
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/18—Epitaxial-layer growth characterised by the substrate

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Recrystallisation Techniques (AREA)
GB0012797A 2000-05-25 2000-05-25 A method of growing single crystals Withdrawn GB2362754A (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
GB0012797A GB2362754A (en) 2000-05-25 2000-05-25 A method of growing single crystals
AU62622/01A AU6262201A (en) 2000-05-25 2001-05-24 A method for growing single crystals
PCT/IL2001/000476 WO2001090449A1 (en) 2000-05-25 2001-05-24 A method for growing single crystals

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB0012797A GB2362754A (en) 2000-05-25 2000-05-25 A method of growing single crystals

Publications (2)

Publication Number Publication Date
GB0012797D0 true GB0012797D0 (en) 2000-07-19
GB2362754A GB2362754A (en) 2001-11-28

Family

ID=9892402

Family Applications (1)

Application Number Title Priority Date Filing Date
GB0012797A Withdrawn GB2362754A (en) 2000-05-25 2000-05-25 A method of growing single crystals

Country Status (3)

Country Link
AU (1) AU6262201A (en)
GB (1) GB2362754A (en)
WO (1) WO2001090449A1 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2014151146A1 (en) * 2013-03-15 2014-09-25 Denovx, Llc Directed nucleation and crystal growth from solution using surface energy modified amorphous materials

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3580732A (en) * 1968-01-15 1971-05-25 Ibm Method of growing single crystals
JPS5993000A (en) * 1982-11-17 1984-05-29 Yoshihiro Hamakawa Substrate for manufacturing single crystal thin film
CA1329756C (en) * 1986-04-11 1994-05-24 Yutaka Hirai Method for forming crystalline deposited film
EP0365166B1 (en) * 1988-10-02 1994-02-23 Canon Kabushiki Kaisha Crystal article and method for forming same
KR950005054B1 (en) * 1991-12-31 1995-05-17 삼성전자주식회사 Apparatus for detecting odd/even field of tv signal
JPH0686089A (en) * 1992-03-09 1994-03-25 Meisho Chin Method for compensation of linear distortion of horizontal scanning in monitor and its compensating coil
US5264722A (en) * 1992-06-12 1993-11-23 The United States Of America As Represented By The Secretary Of The Navy Nanochannel glass matrix used in making mesoscopic structures
US5395481A (en) * 1993-10-18 1995-03-07 Regents Of The University Of California Method for forming silicon on a glass substrate
AU7082596A (en) * 1995-07-28 1997-02-26 Forschungsverbund Berlin E.V. Method of producing crystalline layers

Also Published As

Publication number Publication date
AU6262201A (en) 2001-12-03
WO2001090449A1 (en) 2001-11-29
GB2362754A (en) 2001-11-28

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Legal Events

Date Code Title Description
WAP Application withdrawn, taken to be withdrawn or refused ** after publication under section 16(1)