WO2001063022A3 - Controlled neck growth process for single crystal silicon - Google Patents

Controlled neck growth process for single crystal silicon

Info

Publication number
WO2001063022A3
WO2001063022A3 PCT/US2001/005379 US0105379W WO0163022A3 WO 2001063022 A3 WO2001063022 A3 WO 2001063022A3 US 0105379 W US0105379 W US 0105379W WO 0163022 A3 WO0163022 A3 WO 0163022A3
Authority
WO
WIPO (PCT)
Prior art keywords
single crystal
crystal silicon
growth process
large diameter
neck
Prior art date
Application number
PCT/US2001/005379
Other languages
French (fr)
Other versions
WO2001063022A2 (en
Inventor
Hiroyo Haga
Makoto Kojima
Shigemi Saga
Original Assignee
Memc Electronic Materials
Hiroyo Haga
Makoto Kojima
Shigemi Saga
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Memc Electronic Materials, Hiroyo Haga, Makoto Kojima, Shigemi Saga filed Critical Memc Electronic Materials
Priority to US10/204,654 priority Critical patent/US6869477B2/en
Priority to EP01914414A priority patent/EP1259664A2/en
Priority to KR1020027010918A priority patent/KR20020081343A/en
Publication of WO2001063022A2 publication Critical patent/WO2001063022A2/en
Publication of WO2001063022A3 publication Critical patent/WO2001063022A3/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20—Controlling or regulating
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20—Controlling or regulating
    • C30B15/22—Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

A process for preparing a single crystal silicon in accordance with the Czochralski method, is provided. More specifically, by quickly redueing the pull rate at least once during the growth of a neck portion of the single crystal silicon ingot, in order to change the melt/solid interface shape from a concave to a convex shape, the present process enables zero dislocation growth to be achieved in a large diameter neck within a comparably short neck length, such that large diameter ingots of substantial weight can be produced safely and at a high throughput.
PCT/US2001/005379 2000-02-22 2001-02-20 Controlled neck growth process for single crystal silicon WO2001063022A2 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
US10/204,654 US6869477B2 (en) 2000-02-22 2001-02-20 Controlled neck growth process for single crystal silicon
EP01914414A EP1259664A2 (en) 2000-02-22 2001-02-20 Controlled neck growth process for single crystal silicon
KR1020027010918A KR20020081343A (en) 2000-02-22 2001-02-20 Controlled neck growth process for single crystal silicon

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2000-44369 2000-02-22
JP2000044369 2000-02-22
JP2000-136811 2000-05-10
JP2000136811A JP4521933B2 (en) 2000-02-22 2000-05-10 Method for growing silicon single crystal

Publications (2)

Publication Number Publication Date
WO2001063022A2 WO2001063022A2 (en) 2001-08-30
WO2001063022A3 true WO2001063022A3 (en) 2002-07-25

Family

ID=26585834

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2001/005379 WO2001063022A2 (en) 2000-02-22 2001-02-20 Controlled neck growth process for single crystal silicon

Country Status (5)

Country Link
EP (1) EP1259664A2 (en)
JP (1) JP4521933B2 (en)
KR (1) KR20020081343A (en)
TW (1) TW500841B (en)
WO (1) WO2001063022A2 (en)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10137856B4 (en) * 2001-08-02 2007-12-13 Siltronic Ag Single-crystal silicon made by crucible-free zone peeling
JP5486190B2 (en) 2006-01-20 2014-05-07 エイエムジー・アイデアルキャスト・ソーラー・コーポレーション Single crystal molded silicon for photoelectric conversion and method and apparatus for manufacturing single crystal molded silicon body
JP4857920B2 (en) * 2006-06-07 2012-01-18 株式会社Ｓｕｍｃｏ Method for producing silicon single crystal
US20100203350A1 (en) 2007-07-20 2010-08-12 Bp Corporation Noth America Inc. Methods and Apparatuses for Manufacturing Cast Silicon from Seed Crystals
US8591649B2 (en) 2007-07-25 2013-11-26 Advanced Metallurgical Group Idealcast Solar Corp. Methods for manufacturing geometric multi-crystalline cast materials
WO2009015167A1 (en) 2007-07-25 2009-01-29 Bp Corporation North America Inc. Methods for manufacturing monocrystalline or near-monocrystalline cast materials
KR101515373B1 (en) * 2014-10-22 2015-04-28 하나머티리얼즈(주) Preparation Method of Single Crystal Silicon Componet with Improved Durability for Plasma Appratus
KR101665827B1 (en) * 2014-12-30 2016-10-12 주식회사 엘지실트론 Method for Growing Single Crystal enabling control Shape of Ingot Interface
JP6439536B2 (en) * 2015-03-26 2018-12-19 株式会社Sumco Method for producing silicon single crystal
DE102019210254A1 (en) * 2019-07-11 2021-01-14 Siltronic Ag Method for pulling a single crystal from silicon according to the Czochralski method

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04104988A (en) * 1990-08-20 1992-04-07 Fujitsu Ltd Growth of single crystal
EP0671491A1 (en) * 1994-03-11 1995-09-13 Shin-Etsu Handotai Company Limited Method of growing silicon single crystals
US5487355A (en) * 1995-03-03 1996-01-30 Motorola, Inc. Semiconductor crystal growth method
EP0747512A2 (en) * 1995-06-07 1996-12-11 MEMC Electronic Materials, Inc. Process for eliminating dislocations in the neck of a silicon single crystal
WO1999007922A1 (en) * 1997-08-08 1999-02-18 Memc Electronic Materials, Inc. Non-dash neck method for single crystal silicon growth
JPH11199384A (en) * 1997-12-27 1999-07-27 Shin Etsu Handotai Co Ltd Growth of silicon single crystal
EP0949359A1 (en) * 1998-04-07 1999-10-13 Shin-Etsu Handotai Company Limited Process for producing a silicon single crystal by Czochralski method
US6019836A (en) * 1996-03-15 2000-02-01 Sumitomo Metal Industries, Ltd. Method for pulling a single crystal

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4224906B2 (en) * 1999-10-29 2009-02-18 株式会社Ｓｕｍｃｏ Pulling method of silicon single crystal

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04104988A (en) * 1990-08-20 1992-04-07 Fujitsu Ltd Growth of single crystal
EP0671491A1 (en) * 1994-03-11 1995-09-13 Shin-Etsu Handotai Company Limited Method of growing silicon single crystals
US5487355A (en) * 1995-03-03 1996-01-30 Motorola, Inc. Semiconductor crystal growth method
EP0747512A2 (en) * 1995-06-07 1996-12-11 MEMC Electronic Materials, Inc. Process for eliminating dislocations in the neck of a silicon single crystal
US6019836A (en) * 1996-03-15 2000-02-01 Sumitomo Metal Industries, Ltd. Method for pulling a single crystal
WO1999007922A1 (en) * 1997-08-08 1999-02-18 Memc Electronic Materials, Inc. Non-dash neck method for single crystal silicon growth
JPH11199384A (en) * 1997-12-27 1999-07-27 Shin Etsu Handotai Co Ltd Growth of silicon single crystal
EP0949359A1 (en) * 1998-04-07 1999-10-13 Shin-Etsu Handotai Company Limited Process for producing a silicon single crystal by Czochralski method

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
HOSHIKAWA K ET AL: "DISLOCATION-FREE CZOCHRALSKI SILICON CRYSTAL GROWTH WITHOUT THE DISLOCATION-ELIMINATION-NECKING PROCESS", JAPANESE JOURNAL OF APPLIED PHYSICS, PUBLICATION OFFICE JAPANESE JOURNAL OF APPLIED PHYSICS. TOKYO, JP, vol. 38, no. 12A, PART 2, 1 December 1999 (1999-12-01), pages L1369 - L1371, XP000890830, ISSN: 0021-4922 *
PATENT ABSTRACTS OF JAPAN vol. 016, no. 349 (C - 0967) 28 July 1992 (1992-07-28) *
PATENT ABSTRACTS OF JAPAN vol. 1999, no. 12 29 October 1999 (1999-10-29) *

Also Published As

Publication number Publication date
EP1259664A2 (en) 2002-11-27
JP4521933B2 (en) 2010-08-11
JP2001316198A (en) 2001-11-13
TW500841B (en) 2002-09-01
WO2001063022A2 (en) 2001-08-30
KR20020081343A (en) 2002-10-26

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