TW500841B - Controlled neck growth process for single crystal silicon - Google Patents

Abstract

A process for preparing a single crystal silicon in accordance with the Czochralski method, is provided. More specifically, by quickly reducing the pull rate at least once during the growth of a neck portion of the single crystal silicon ingot, in order to change the melt/solid interface shape from a concave to a convex shape, the present process enables zero dislocation growth to be achieved in a large diameter neck within a comparably short neck length, such that large diameter ingots of substantial weight can be produced safely and at a high throughput.

Description

500841

The invention is prepared to be relevant. The single crystal silicon ingot achieves an inexhaustible increase in single crystal silicon on the neck of the ingot. The starting material, which is polycrystalline silicon, is poured into the crucible single crystal. The slow growth of the crystal and the melting of the non-seed crystal send the entire growth in In monocrystalline silicon, a small diameter should be drawn with the southern crystal (for example, before, completely after, the surface slope has been eliminated in these rows, and the neck can be broken by increasing the temperature after the main body. It is intended to be used in electricity. In particular, the process-related growth period is the semiconductor usually melted by chai-ta-ri, the heat of extraction and the contact of the growth substance with the crystal of the crystal body, and the long rate of eliminating the differential row (eg, 2 to 4 mm eliminates the difference. The neck of small diameter, the crystal straight until the circle is reached, controls the elongation speed to the main that has a crystal close to broken early crystals. When the water impact is in between, add 0 to the traditional square, high). In general, the difference in the diameter will increase the column main body rate and the semiconductor-level single-crystal silicon manufactured by the bulk drop element when the constant straight element is weak. Among them, the elongation rate change is prepared for the opening method (“Cz”) of most procedures of electronic component manufacturing when the shaft length is reduced. In this method, a daughter crystal is brought into contact with molten silicon and a crystal growth is started. The time difference is generated from the seed crystal. These differences exclude the neck area being eliminated, otherwise it will be passed (called the impact neck method) to 6 mm / min. The growth has to start at approximately 100 mm in the growth of the crystal body. Neck growth can be eliminated completely. Once the difference is long, it forms a crystal crown or the required diameter of the crystal. Crystal Cylinder Compensation reduces the melting diameter when melting levels. Partly, during the crystal growth, to the crucible. So with shock

Page 5 500841 Five-necked neck, invention description (2) The traditional crystal of one usually grows to a weight of 100 kilograms or less. However, in recent years, in semiconductors, "to reduce the progress in the E-card industry that continues to increase the production of larger silicon wafers of high quality and to create highly integrated semiconductor devices has led to increased wafer denominations. In particular, more than 200 millimeters (8 inches) to 300 millimeters (12 inches) or larger, and the pair has a straight pinch requirement. This leads to the demand for a more efficient Nθ production capacity of the neck growth process: a: Elimination of bismuth tea row and its prevention of neck breakage can support Pandan, Go /, and more The growth of spar ingots. Dong Yan reached 300 kg or

The conventional solution to prevent neck breakage in larger crystals is ancient, 1 B ▽ W Nafazawa increase L Fuji-ancient

path. However, the 'large diameter' neck is usually less desirable, the seed crystal of U, which is then J2 when it comes in contact with Shi Xi melt, a large sliding difference. Therefore, the neck portion of the larger diameter can be effectively removed! 5 0,, ^ ^, ^ ^ ^ ^ effectively eliminates the slip difference. To win ’, to minimize the sliding difference in the impact neck with a larger diameter. Please serial number 4-1 04988 propose the use of a tip with a taper: 2 in the sequence of the water sun. However, the unique seed crystal handles Indian shellfish. Because seed crystals are unique,

Therefore, change, regardless of whether or not the growth of indiscriminate emissions is achieved. Because of productivity. Ϊ: A downtime period that requires over-treatment ', which adversely affects the mold. And the right Γ This program uses the built-in heater between the seed crystal bracket and the heater to make it to form on the seed crystal and the neck :; the degree gradient is more difficult, which requires a single crystal to be extremely

Page 6 V. Description of the invention In the larger Japanese version, please disclose that the degree of increase by at least two of the interaction of the heavy path. The large increase and decrease in diameter must be as heavy as before. ”Therefore, direct control or Is the program, whose block has a large crystal with a large diameter. Therefore, the early crystals prayed. (I) The difference between the seed crystals; hit the neck, the other is used to eliminate the difference (Kokai) 1 bu 1 99384. In which the procedure needs to be shortened by eliminating the slip neck diameter. The neck therefore has an increase in the diameter of this reference description. However, when the procedure claims to provide shorter Shiyuki single crystals, the procedure is complicated and difficult. In the process of growing the ingot with a larger diameter but a shorter shuttle, the heating and contact melting in the fixed and short block neck that continues in the removal of the large and medium output diameter neck of the hair (iii) exposed here The straight part of the neck length is used to cause the target to cause (3) the diameter of the punching order to change the area again and again. However, a small part of the diameter is often rephrased. Among the many characteristics of the large straight Ming, the single crystal broken ingots, and the rate and yield are increased by the neck; provide such a sliding differential row; mention, and provide that, the present invention The difference in the direction of the row of the polycrystalline stone in the growth process is until the process of the seed at the growth rate R. Specifically, the increase and decrease of the dynamic difference row has a neck with a reduced length to control because the length of the neck There is a need for 'necks' that can be mentioned: provide procedures with a large production; provide so; provide such procedures where the prayer process' which considerably reduces the supply of such procedures where the neck procedure uses standard seeds Procedures for removing in-systems according to the Chai's method. This package forms a silicon melt; (i 丨) causes the melting to begin, which is formed in it ’withdraw seed water from the melt

$ 7 页 500841 Fifth, description of the invention (4) A — " ~ ----—- crystal to form a first section having a neck having a diameter of at least about 5 mm; (iv): decreasing the growth rate R 速率 growth Rate R2 to form a second section with a neck having a diameter of at least about 5 millimeters; and (V) increase the growth rate R at a growth rate R 3 'to open > additional to a neck having a diameter of at least about 5 mm Section; where the rate R is at least about 25% less than the rate R, and where the difference is eliminated in the neck in a shaft length of less than about 150 mm. The present invention is also directed to a procedure for eliminating the difference in the neck of a single crystal silicon ingot 'and its growth is based on the Chai's method. This procedure includes: (丨) heating the polycrystalline silicon in the crumble to form a silicon melt; (ii) bringing the seed crystal into contact with the melt 'until the seed begins to melt, which forms a differential row therein; (丨 丨 i) The seed crystal is withdrawn to grow into a neck portion of the ingot, the neck having a diameter of at least about 5¾ meters and a length of less than about 150 millimeters, at a rate that changes with the length of the neck, 'causing the shape of the melting / solidifying interface from concave to convex The shape is changed at least once to eliminate the difference between them; (iv) growing a seed cone that glows outwards adjacent to the neck of the ingot; and (v) growing a body that is adjacent to the seed cones glowing outward, The body has a nominal upper gastric diameter of at least about 150 mm, 200 mm, or 300 mm. The present invention is further directed to a single crystal silicon, the compound seven red, ..., 〇 ^ T / dry tools include · (〇-neck has a flat) and the lower part of the neck synonymously the diameter is at least about the average diameter of about 5 mm, A layer portion with a length of less than about 150 mm and a lower layer portion with no difference; (ii adjacent seed cones; and, (iii) a body adjacent to a seed cone having a name of 150 mm. The present invention, other objects, and Some features will be obvious and others

Figure 1 is a diagram that outlines the direction in which the sliding difference increases when the shape of the melting / solidification interface (for example, "" normal S / L ") is changed to a convex surface (for example," low s concave surface. ") The vertical region, whose description is usually included in the upper layer of the present invention. Figure 3 is a graph showing the crystal growth rate ("S / L") and neck diameter during the operation performed according to a specific embodiment of the present invention and further + f described in Example 1; 乂 Figures 4 A and 4 B are photographs of the X-ray measurement chart of the single crystal second part grown according to a specific embodiment of the present invention and are further described in Example 丨, @ 图 t § 贝 4 Photographs of most grades; ^ Figure 5 is a graph showing the crystal growth μ ("S / L") and neck diameter during the traditional long neck procedure, as described in Example 2; and, Figures 6 Α and 6 Β In order to use the traditional long-neck procedure as described in Example 2, a photo of the X-ray measurement chart of the neck part of the growing single Shi Xi, Figure 6] 5 is a photo of the 8-year enlarged part of the 6a.之 Detailed description of the embodiments According to the procedure of the present invention, it has been found that Below, even for ingots with larger diameters and considerable weights, sliding differential rows can be eliminated at the neck portion of single crystal silicon ingots, the growth of which is based on the Chai's method. More specifically, it has been found that compared to The traditional method for growing large diameter and / or large monocrystalline stone ingots can be eliminated in the neck of monocrystalline stone ingots, even if the neck has a larger diameter, its length can be borrowed.

500841 > Description of the invention (6) ____ By changing the crystal branch length rate rapidly from ancient times, that is, the cover can be significantly reduced by == low speed; removed once less. θ The length of the shoulder sharply reduces the elongation rate to the neck. Referring now to Figure 1, it is generally believed that for a standard growth procedure, _, the normal growth rate is used during the growth period (e.g., greater than, medium, m / min) ^ Due to the concave nature of the melting / solidification interface, the == general: to; of: the heart grows vertically. As a result, the difference between the two ranks is two lengths, which must be increased to remove these differences: about 150 mm or more). It ’s non-relevant (for example, you do n’t need to cite any special reason for it) Ground, changing the melting / solidification, the surface from concave to convex surface is reduced by considerably reducing the pull rate. By rapidly changing the melting / solidification interface shape from concave to convex surface, the difference is shown in the general and As mentioned above, the vertical angle of the interface is more effectively concentrated on the elimination of the favorable difference of the neck as shown in Figure i. Because of the change in the shape of the interface, the shorter the wheelbase in the ingot, the larger the diameter Or the elimination of the difference in length (for example, less than about 50 gm)., '^ Therefore, unlike the existing impact neck procedure, where (丨) is relatively straight (such as A on 5f or even 10) ° mm) Its growth is 2, 4 mm) sequence, in which the neck has a diameter of less than about 4 mm (for example, from about,) and a length of less than about 100 mm. 5. Description of the invention (7) Speed elongation Rate (e.g., about ^ light dass pen meters / minute or more), or (ii)乂 Large-diameter ingots (eg, go to #) shovel Liang ^ ^ greater than about 150 mm) its growth is through Xu Xi's order, in which the neck and right-handed production is greater than 1 w 丄, there is a large straight ( For example, greater than about 5 millimeters) and a length greater than about 15 0 ¾ meters, Benluo Rn # fl e, moon hunting by a procedure in which a large-diameter neck constriction with a relatively large button length is formed and the shellfish can be large The diameter of monocrystalline stone ingots is safe and there is a growth of drought. A more specific and ingenious procedure includes growing at the neck: Second, as described further here, 'this hair once to form a non-difference row', the change of 3 Ge is the cyclic elongation rate of hair less, the Has a diameter greater than about 5 mm (for example, about 6¾ meters, 8 mm, 1 inch or more), and a length less than about 150 millimeters, for example, less than about 1 2 5 e φ / lN, ^ Α, 100 mm, 90 mm, 80 mm or Qixi, h 丄 is stupid and large diameter (for example, about 2000, 300 mm Cheng Xi, 々a) such as, About 100, 200, 300, 400 kg or more). It should be noted in this matter that a neck (for example, about the father ’s preference to have the largest diameter and the shortest as possible and reduce the processing time, especially ^ meters and 1GG mm) 'in order to increase strength 5 > nn4 qnn 八 & ,,, Don't order for heavier ingots (for example, about Z ϋ ϋ or 300 kg), in! In some cases, when the diameter is increased, the length of the A system needs to be increased to eliminate the difference, the upper and lower rows (for example, about 10 or 12 mm and about 125 mm or more, respectively). However, I ^ Shi Guangbuya> idea processing can be optimized to achieve a large diameter, non-difference neck (u). H M si (for example, 10 mm, 12 mm or more) with relative = Length (for example, less than 100 mm or even 80 mm). According to this procedure and the Cheshire method and referring now to FIG. 2, a single crystal 10 has a seed crystal 121 14, a seed cone 16, a shoulder 18, and a body. 2 〇 ° Once the seed crystal 1 2 is discharged, it will contact the surface of the melted semiconductor material.

Page 11 丄 5. Description of the invention (8) When it touches, for example, Shi Xi, by changing it, it usually has: or the growth rate, the neck "then has a display" on top of the seed crystal; 'discrete' gate growth In the row with the difference (without the layer, there is less difference (1 :) in the middle 々24 'growing in Shangyu County in the middle Qiu Ba +, and (1 1 1) the lower layer part 26, :: Under the knife, there is no difference. In summary, as further described here, 'the diameter of the neck is constant for the length, that is, the change in the straight yttrium of the neck is different from the purpose or the desired diameter. The length of the neck is about Η%, 10 /. 'Or even 5 /. (For example, more than about the last 50%, 60%,

70%, 80%, 90%, 95% or more). In the first embodiment, an initial elongation rate will be established, which is sufficiently shaped and has a diameter of the neck (the exact diameter depends at least in part on the diameter and / or weight of the growing ingot). In general, the rate ranges from greater than about, b to about 6 m / min, and the rate from about 5 to 5 mm / min, or to about 3 to about 4 mm / min. Some specific embodiments = In general, the elongation rate is established to cause the melting / solidification interface to have a concave shape. After the long rate is established, 't is maintained for a period of time sufficient to form the length of the neck. Generally speaking

\ Minutes, 5 minutes, Η minutes or more, the time is about neck formation, 20%, m or more. In other words, the initial rate is maintained for about 5, 10, 15, 20, or even 25 millimeters. After the completion of the initial period of the cervix length, the 'elongation rate is rapidly reduced to a first long rate, which is sufficient to change the shape of the melting / solidification interface from the concave surface to the shape of the main convex surface. In general, this involves a significant change in elongation rate at least

500841

bU% OU 70% 5%, 40%, meters or length or "reduced", the rate is less than about 丨 mm / min, its rate is about ^ minutes, 0.6 mm / minute, 0.5 mm / minute, 〇 · 3mm / min ^ 0.2mm / min, which is used in some cases. Therefore, minutes min Ϊ = decrease Γ! 1mm / min, Umm / min, 2mm =. To order. V card / min know, 3 House meters / minute, 4 mm / minute or more, in order to ensure that the melting / solidification interface from the concave surface 拎 忾 Z; „It is important to decrease quickly at a longer rate. For example, in the shape of a convex surface, the elongation rate will be reduced such that the second elongation speed is 6 ,, and the elongation is about 50, 40, 30, 20, or even 1 (^ / or 疋 less (for example, in This matter must be achieved within the phonetic notation. For the lengthening of a given crystal; the length of the second rate depends at least in part on the type and type of stretcher used, 掸 = eg, depends on the formation of silicon meters / minute-like High can be used at the beginning, "such as about 8 or even 10, let alone f or low) should not be regarded as a kind of limit. Therefore, the above rate (after the establishment of Bhutan, the reduction is to, for The round of maximizing the procedure 2. The rate is only maintained for a short period of time; Hold a segment that is sufficient to change the melting / solidification level, and the 'reduced elongation rate will only increase the outward growth of the sliding difference row. A shape of time is generated in the neck Approximately 3% of the entire neck formation time, however, this rate will be maintained at 0.5%, 0.2%, or even 0.1%). Second, less (for example, less than about usually results in reduced maintenance Elongation rate means the commonly used elongation rate, this' even 1 minute, which is less than the neck / 5 minutes at f, 4 minutes Clock, 2 minutes (for example, about 0.5 millimeters, 〇2 nanometers into 5 halo meters, 1 millimeter or less •, 0.1 millimeters or less) V. Description of the invention (10) F. The decreasing elongation rate increases rapidly after maintaining a given period of time, and the "elongation rate after chanting" + θ wti increases rapidly after a certain period has elapsed. Tongdang = = = Γ 姐 = After the text, in some cases, the rate is stretched. After the rate is stretched, the rate can be maintained directly. After the second rate is quickly reduced and the rate is again after the rate, the rate center Hi: Reduce the rate increase μ, _, Two = bell (for example, about 20% (for example, about 5%, 10%, 20%, or more of the neck length). After the shape, the page can be quickly reduced again to change the melting / solidification interface ^, The rate is further two steps J, and the middle 3 difference is arranged at the peripheral edge of the neck, as described above. 'And two :: number, where the elongation rate is changed from the high elongation rate to the high elongation rate, (which can be the same or Different from the 冋 elongation rate) to quickly change the melting / solidification, it can optimize the crystal elongation process: · Consider factors such as ingot straight weight, etc. to ensure that only a minimum number of cycles are used to achieve undifferentiated row growth at the earliest possible grate (eg, degrees), thus maximizing output rate. In some specific embodiments The number of cycles will range from about i to about 10 (eg, about 2, 4, 6, or 8), ^ 2 to about 8 or from about 4 to about 6. '^ The neck is as described above, and the program of the present invention causes Large-diameter, profitable blocks can be produced efficiently and safely by increasing the relatively short diameter of large-diameter workers. The present invention is particularly advantageous because five, the invention description ( 11) __ (1) maintain the rapid growth rate between the growth rate and the elongation rate in a short period of time ', the less rate and (ii) the diameters of the high and reduced diameters remain substantially constant (which causes < throughout the growth process, Neck = Say, although in the neck of the ingot 擗 = to form a stronger neck). More specifically, under these reduction rates, the elongation rate of the neck during the straight pressing of θ changes at 5%, 3%, 2%, or even 1%; that is, the position of the Γ transition usually changes less than about the diameter of the neck, relative to増 = the diameter of the area that is growing at a decreasing rate, which is generally "2% or even 1% at the usual growth rate. 'For Han Jiao, the increase is less than about 5%, 3%, according to this The preferred specific electric meter of the invention starts at a normal or normal rate from two, where the neck range decreases from about 5 to 7 millimeters when the elongation rate is reduced to about 0.8 millimeters H5 mm / min. The interface between the discovery and the seed crystal From + or less, in the operation of the invention of silicon melting, the shape of the convex surface is changed for the sake of debate. Therefore, the neck is usually increased at a rapid rate ... Second, the neck has a diameter from about 5 to about 7 mm, time It is sufficient to form a growth of at least ^ to about 5 mm / minute, and the length of the neck section is 15 mm long, and the length of the neck is preferably at least about, usually less than about 20 mm in length. Within the growth rate, the elongation rate is faster ^ t is preferably less than about 20 or even at least about 1 in 10 seconds. 5 亳 m / 八 于 ， 乂. The elongation rate is reduced by m / min from the initial elongation rate. The current quotient is about 2.5 mm / min and the best is about 3 millimeters of "high" elongation. The rate ranges from 4 for the growth of the pass / ingot, of which about 5 to 7 millimeters, 2 to about 5 m / min, and requires a small neck diameter, preferably 0.5 亳 < / 二 j 逮The rate should be about 0.8 mm / min or more ", knife or mile, and the best 0.3 mm / min or

Page 15 :)? 41 5. Invention description (12) Fewer. Before returning to the high elongation rate, to 5 minutes, and preferably from about 2 to 3 minutes (for example, back to first ^ to maintain about i or some rate in the "high" range). The catch rate, the growth program according to the present invention can be applied to the method of Shizuku's growth, and the magnetic field to apply Chai's (MCz): if the standard Chai = 1 long period, the application of transverse magnetic field or magnetic tip in water is not very ... For example, You can use 丄 Ϊ: crystal < gt〇 > or < 111 >). y Ah, and in some embodiments, seed crystals with a diameter of less than about 7 millimeters can use the diameter of the tip of the crystal) Λ by melting the seeds in the melt. The diameter of the large and small crystals is not less than about 7 millimeters. Part of it can be based on the remainder of the operating conditions used by the ":::::" county, and attention should be paid to water additions; "Increase-length of ordinary ^" "Elongation rate is not Yonggu, Tianchu *, Tonghang, start to start Correction of the elongation rate Y, only limited to use in the crystal growth range: long: any other used during the sequence; such as' this ^ any elongation rate, Gan] Liangxi elongation rate is specifically used The = :, melting, / curing interface from concave to convex shape of the program is used in the neck thumb. Xiang said =-In general, pay attention to the shape of the curing / curing interface of the present invention; long rate changes quickly to change the melting 4 and reduce the difference in row from the neck. Usually when this method is involved

Page 16 V. Description of the invention (13) involves quickly reducing the rate from high rate to low rate and back. In some specific embodiments, || itp **,, ^. ^, T 硪. The growth of 卩 can start at a low rate and then quickly increase to a high rate. ^ ^ IL Example The following example illustrates a method sequence. Therefore, these should not be interpreted in a way that can be used to implement the process limitation of the present invention. Example 1 This example shows the effect of eliminating the difference of 5 when the neck portion of single crystal silicon is grown according to the present invention. In this example, the growth of the single crystal is performed using the direct

坩 600 mm (24 inches) and crucible with a capacity of 140 kg of starting material. The growth of the neck begins with the use of a seed water with a bottom 丨 2 mm X 丨 2 mm in diameter, and a single crystal with a diameter of 0 0 ¾ meters is elongated at a growth rate of 4 mm / min. It is sufficient to form a diameter greater than 5.7 mm The neck, as shown in Figure 3. After the neck has grown to a length of nearly 20 mm, the growth rate is reduced to 0.2 mm / min, which is maintained for 1 minute. This procedure (the growth of 2 0¾ at 4 mm / min: the crystal of rice 'followed by the growth of the neck' at a decrease growth rate of 0.2 mm / min for 1 minute) was repeated a total of 10 times.

After examining the neck by X-ray measurement, it was decided that after the first decrease in the growth rate, substantially all the slip difference was immediately eliminated in the neck (at about 20 mm of the neck length), as shown in Figures 4A and 4B The X-ray measurement chart is shown. Therefore, it is important to note that from this example, in some cases, the 'elongation rate can be cycled from high to low to high multiple times during neck growth, to eliminate differential discharge, possibly after only one cycle (or melting / curing interface) Change) basically

Page 17 500841 __________ ^ ----- ----- V. Description of the invention (14) Eliminate all sliding differences. §JL ^ L · For the purpose of comparison, this example shows the traditional operation for forming the neck portion of a monocrystalline stone. This example is performed using a crucible with a direct press of 600 mm (24 inches), a capacity of 140 kg of starting material, and a seed crystal with a bottom of 12 mm x 12 mm, as in Example 1. Single crystal silicon with a diameter of 00 mm grows at a growth rate close to 4 mm / min to form a neck having a diameter greater than 5.2 mm, as shown in FIG. 5. As shown in the X-ray measurements of the song section 6A and 6B, the length of the neck needs to be between 150 and 200 mm before the sliding difference is eliminated. % ΜΛ- —Single crystal silicon length is just like the above example, except that during the crystal growth period, a magnetic field of 3,0 0 0 Gauss is applied with crucible = surface. In this example, a single crystal with a diameter of 200 millimeters is elongated at a growth rate ranging from 2 to 5 millimeters per minute, which is at the tip of the seed crystal, enough to form a neck portion with a diameter of approximately 6.5 millimeters. After the neck portion has grown to a length of approximately 20 mm, the growth rate is reduced to 0.2 mm / minute for 2 minutes. This procedure (growing the neck by 20 mm at a usual growth rate from 2 to 5 mm / min, followed by a decrease = length rate of 0.2 mm / min, time of 2 minutes, growing the neck) is repeated; In the two programs, the 'growth rate is changed within 15 seconds or less between the normal or initial growth rate and the long growth rate. The results obtained are as follows: A. Single crystal silicon grown in the magnetic field application as described above Among them, there are only 3 secret neighbors, and there is a difference of 500841 from the tip of the seed crystal, i.e. 500841. 5. Description of the invention (15) The single crystal eve is less than about 15 mm from the tip of the seed crystal. This is better than using the procedure of the present invention, which has no application (as described in Example 1), to increase the single crystal silicon Ganz σ ± 0. Heart m Crystal stone in the neck 10 mm distance, Γ; Poor; Medium and long order from work > It means that 丨, mountain,, and have a row, and all crystals have no row at a distance of less than about 150 mm from the tip of the seed crystal. 2 · In comparison, For the traditional long-necked Ganzhuang e, the toast grows at 2 to 5 millimeters per minute, and the crystal grows in the first phase. The second, 应用 applies a 3, 0 0 0 Gauss magnetic field from the side, almost ι 〇 ％% of single crystal silicon: magnetic = 100 mm distance from the tip of the crystal, there are differential rows. And, From the distance of 100 and 200 mm from the tip of the seed crystal, the crystal silicon still has a differential row. Ding Zao 3. Another comparison, for the traditional long-neck procedure, the growth rate is in the range of 2 to 5¾ m / Minutes, the magnetic field was not applied during the crystal growth period: the crystal silicon 'almost 90% of the silicon single crystal is on the neck, and there is a difference between the distance from the seed crystal tip = the distance of the meter'. The same 'from the seed crystal tip 2〇 With a distance of 0 mm, only 4% of the monocrystalline silicon still has a differential row in the neck. = As shown in the example above, the procedure of the present invention can eliminate the differential row from the neck, thereby generating a large-diameter and differential row. Monocrystalline silicon. Taking into account the previous paragraph, it can be known that during the neck growth phase, by rapidly reducing the pull rate again at least once, as described above, it may be earlier and earlier than before (that is, at shorter neck lengths). (Within) can achieve non-differenced row growth in the neck of large straight scales. As a result, large diameter and high weight ingots: the output rate can be increased.% 500841 Schematic illustration of 11EI · ΙΙ Page 20 O: \ 69 \ 69375 .ptd

Claims (1)

500841 Mou # 葶 籼 90104084 Amendment 1. A method to eliminate the difference in discharge in the neck of single crystal silicon ingots, the growth of which is based on the Chai's method, the procedure includes: heating polycrystalline stone in J # 塥 to form stone melting ; Contact the seed crystal with the melt until the seed begins to melt, forming a differential row inside; at a growth rate I, withdraw the seed crystal from the melt to form a first section with a neck of at least 5 mm in diameter ; Reduce the growth rate I to the growth rate R2 to form a second section with a neck of at least 5 mm in diameter; increase the growth rate R2 to the growth rate R3 to form an additional section with a neck of at least 5 mm in diameter; The growth rate R2 is at least 25% less than the growth rate I, and the difference is arranged in the neck, which is eliminated within the axial length of less than 150 mm. 2. The method according to item 1 of the patent application scope, further comprising, after the neck growth is completed, growing a seed cone that emits light adjacent to the neck; and growing a body that is adjacent to the seed cone that emits light outward The body has a nominal diameter of at least 150 mm. 3. The method of claim 2 in which the subject has a nominal diameter of at least 200 mm or 300 mm. 4. The method of claim 2 or 3, wherein the subject has a weight of at least 100 kg, 200 kg, or 300 kg. 5. The method as described in the first item of the patent application, wherein the difference is arranged in the neck and eliminated within the length of the shaft less than 125 mm. O: \ 69 \ 69375-910703.ptc Page 21, 500841 _Case No. 90104084_f / Amended on July 3, 2006_ 6. Application for Patent Scope 6. If the method of the first scope of patent application is applied, the difference is in the neck, Eliminate within axis lengths less than 100 mm. 7. The method according to item 1 of the patent application scope, wherein the growth rate R2 is at least 40% lower than the growth rate I. 8 · The method of the first scope of patent application, wherein the growth rate R2 is at least 80% lower than the growth rate 1. 9. The method according to item 1 of the patent application range, wherein the rate R2 is at least 1.5 mm / min less than &. 10. The method according to item 1 of the patent application range, wherein the rate R2 is at least 2.5 mm / min lower than &. 1 1. The method according to item 1 of the patent application range, wherein the rate R2 is at least 0.8 mm / minute less. 1 2. The method according to item 1 of the patent application range, wherein the rate R2 is at least 0.5 mm / minute less. 1 3. The method of claim 1 in the patent application range, wherein the rate & ranges from 2 to 5 mm / min. 14. The method of claim 1 in which the rate & is reduced to a rate in less than 60 seconds. 15. The method according to item 1 of the scope of patent application, wherein the rate dagger is reduced to the rate R2 in less than 20 seconds. 16. The method according to item 1 of the patent application range, wherein the rate R2 is maintained for a period ranging from 2 to 5 minutes. 1 7. The method according to item 1 of the patent application range, wherein the rate r2 is maintained for less than 3 minutes. O: \ 69 \ 69375-910703.ptc Page 22, 500841 _Case No. 90104084 _ // July of the year > Revision_6. Application for patent scope 1 8. As for the method of applying for the scope of the first item of patent scope, where the rate & Equal to R3. 19. The method according to item 1 of the scope of patent application, wherein the cycle of changing the growth rate is repeated at least 3 times before the seed cone of the adjacent neck is formed. 2 0. The method of claim 1 in which the magnetic field is applied during growth. 2 1. The method of claim 1 in which the neck has a diameter of at least 10 mm. 2 2. The method according to item 1 of the patent application, wherein the diameter difference between the first section and the second section of the neck is not less than 5%. 2 3. The method according to item 1 of the scope of patent application, wherein the change in the neck diameter is at the last 75% of the neck length and less than 10%. 2 4. The method according to item 1 of the scope of patent application, wherein the change in the neck diameter is at the last 75% of the neck length and less than 5%. 2 5. — A method to eliminate the difference in discharge in the neck of single crystal silicon ingots, the growth of which is based on the Cheshire method, which method includes: heating polycrystalline silicon in a crucible to form a silicon melt; The melt contacts until the seed begins to melt, forming a differential row in it; withdrawing the seed crystal from the melt to grow the neck of the ingot, which has a diameter of at least 5 mm and a length of less than 150 mm; change The growth rate of the crystal, under the length of the neck, makes the melting / solidification interface shape change from the concave shape to the convex shape at least once to eliminate the difference between them; O: \ 69 \ 69375-910703.ptc Page 23, 500841 _Case No. 90104084_fV amended on July 20, 2006_ Sixth, the scope of the application for patents has increased and the seed cones that emit light adjacent to the neck of the ingot have grown; A body adjacent to the outwardly emitting seed cone, the body having a nominal diameter of at least 150 mm, 200 mm, or 300 mm. 26. The method of claim 25, wherein the neck has a diameter of at least 10 mm. 27. The method of claim 25, wherein the neck has a length of less than 125 mm. 2 8. The method according to item 25 of the scope of patent application, wherein the growth rate is changed in less than 60 seconds or 30 seconds, so that the growth rate of the seed crystal withdrawn from the melt is reduced from a first rate I, The interface is concave, and to a second rate, the interface is convex. 29. The method according to item 28 of the scope of patent application, wherein the rate R2 is at least 25% or 50% lower than the rate I. 30. The method of claim 28, wherein the rate R2 is maintained for 1 to 3 minutes. 31. The method of claim 25, wherein the growth rate is reduced to cause the interface shape to change from concave to convex, and then increased to change the interface shape from convex to concave. 32. The method of claim 31, wherein the cycle of changing the interface from concave to convex to concave is repeated at least 3 or 5 times. 3 3. The method according to item 31 of the scope of patent application, wherein the shape of the convex interface is maintained for less than 5 minutes or less than 3 minutes. 34. The method of claim 25, wherein the diameter of the neck ranges from 5 mm to 7 mm. O: \ 69 \ 69375-910703.ptc Page 24 500841 _ Case No. 90104084_fV July 3rd __ VI. Application for patent scope 3 5. If the method of applying for patent scope No. 25, the seed crystal has a lot of At the tip of 12 mm2. 36. The method of claim 25, wherein the rate at which the interface has a convex shape is less than 0.8 mm / minute or 0.5 mm / minute. 37. The method of claim 25, wherein the difference between the rate such that the interface has a concave shape and the rate such that the interface has a convex shape is at least 1 mm / minute or 2 mm / minute. 38. The method of claim 25, wherein the seed crystal has a diameter of at least 7 mm. 3 9. A kind of monocrystalline stone, including: a neck having an average diameter of at least 5 mm and a length of less than 150 mm, and including a portion with a difference upper layer and a portion without a difference lower layer; a sub-cone and a lower layer of the neck Partially adjacent; and a body adjacent to a seed cone having a nominal diameter of at least 150 mm. 40. The single crystal silicon according to item 39 of the patent application scope, wherein the body has a nominal diameter of at least 200 mm or 300 mm. 4 1. The monocrystalline silicon according to item 39 of the patent application, wherein the neck has an average diameter of at least 7 mm. 4 2. The monocrystalline silicon according to item 39 of the patent application, wherein the neck has a length of less than 125 mm. 4 3. According to the single crystal silicon of the 39th patent application scope, the change in the diameter of the neck is less than the length of the final neck by 50 ° /. , 75% or 15% of 85%. 4 4. If the single crystal silicon of the scope of patent application No. 39, the neck has an average O: \ 69 \ 69375-910703.ptc Page 25 500841 Case No. 90104084_f / July 3rd of the year_Amendment O: \ 69 \ 69375-910703.ptc Page 26