TW202018132A - Control method, device and system for growing crystal and computer storage medium - Google Patents

Abstract

This invention provides shouldering process control method, device and system for growing crystal and computer storage medium. The method comprises: presetting the setting value of the crystal diameter variation value and the setting value of the crystal growth process parameter at different stages of the shoulder process; obtaining the crystal diameters at different stages of the shoulder process and calculating the variation value; comparing the variation value of the crystal diameter with the setting value to obtain the difference as the input variable of PID algorithm; calculating the adjustment value of crystal growth process parameters by PID algorithm as the output variable of PID algorithm; adding the adjustment value of the crystal growth process parameters and the setting value to obtain the process parameters of the actual crystal growth process. The control method, device and system for growing crystal and computer storage medium control the diameter variety during the shoulder process by PID algorithm to overcome the influence of small changes in the thermal field on the shoulder process, ensuring the same variety in crystal diameter, and improving the repeatability of the shoulder process and the stability of the process.

Description

Crystal growth control method, device, system and computer storage medium

The invention relates to the field of crystal growth, in particular to a crystal growth control method, device, system and computer storage medium, and in particular to a crystal growth control method, device, system and computer storage medium for shoulder-shouldering process.

As a semiconductor material, single crystal silicon is generally used to manufacture integrated circuits and other electronic components. In the process of preparing silicon single crystals, it is mainly to immerse the seed crystal with a smaller diameter into the silicon melt, and use seeding to grow a section of fine crystal with a smaller diameter to expel the dislocations to achieve the purpose of growing zero dislocation crystals . Later, the shoulder-shouldering process will be used to make the crystal grow from the fine crystal to the target diameter, and then use the equal diameter growth to obtain the crystal of the required size.

The shoulder-shuffling process is a more critical process in the crystal growth process and is the basis for obtaining crystals of the target diameter. At present, the main method adopted is the method of combining the speed of pulling down the crystal and the temperature to make the crystal diameter continuously increase to reach the target diameter. In the shoulder-shouldering process, the start time of the shoulder-shouldering or the length of the shoulder-shouldering is mainly used to determine the change of the pulling speed and temperature. Therefore, the pulling speed and temperature of different stages need to be matched during the shoulder-shoulding process. However, in the actual crystal growth process, there are some differences in the thermal field use time, seeding temperature, heater life, etc. each time the crystal grows, so if the temperature and crystal pulling speed settings cannot be adjusted in time, the crystal will be lost during the shoulder-shoulder process structure. In addition, changes in different crystal growth conditions will also lead to different shoulder-shouldering processes, resulting in shoulder-shouldering becoming the most difficult part of the growth process of the crystal-growth process. It takes many attempts to find the appropriate temperature and crystal-pulling speed settings. At the same time, it is also the most difficult part of the crystal growth process. It is very difficult to achieve uniformity every time you put your shoulders down.

The invention provides a crystal growth control method, device, system and computer storage medium for shoulder-shouldering process to solve the above technical problems.

The concept of the invention introduces a series of concepts in simplified form, which will be explained in further detail in the detailed description. The summary of the present invention does not mean trying to define the key features and necessary technical features of the claimed technical solution, nor does it mean trying to determine the protection scope of the claimed technical solution.

The present invention provides a crystal growth control method for a shoulder-shouldering process. The method includes: presetting the setting value of the crystal diameter change value at different stages of the shoulder-shouldering process, the setting value of the shoulder-shoulder length change value, and the shoulder-shouldering process The setting values of the crystal growth process parameters at different stages; obtaining the crystal diameter at different stages of the shoulder-releasing process and calculating the change value of the crystal diameter; obtaining the shoulder-releasing length at different stages of the shoulder-releasing process and calculating the The change value of the shoulder length; the ratio of the change value of the crystal diameter and the change value of the shoulder length to the set value of the change value of the crystal diameter and the change value of the change value of the shoulder length Compare, get the difference, and use the difference as the input variable of the PID algorithm; use the PID algorithm to calculate the adjustment value of the crystal growth process parameter as the output variable of the PID algorithm; use the crystal growth process parameter The adjustment value is added to the set value of the crystal growth process parameter to obtain the process parameter of the actual crystal growth process.

Further, the crystal growth process parameters of the shoulder-releasing process include crystal pulling speed and/or temperature.

Further, the different stages of the shoulder laying process include different shoulder laying times or different crystal lengths.

Further, the crystal diameters at different stages of the shoulder-releasing process are obtained by using a diameter measuring device.

Further, the length of the shoulder-shouldering at different stages of the shoulder-shouldering process is obtained using a shoulder-shoulder length measuring device.

The invention also provides a crystal growth control device for shoulder-shouldering process. The device includes: a preset module for presetting the setting value of the crystal diameter change value and the shoulder-shoulder length change value at different stages of the shoulder-shouldering process Setting values and setting values of crystal growth process parameters at different stages of the shoulder-releasing process; diameter measuring device for obtaining the crystal diameters of the different stages of the shoulder-releasing process and calculating the change value of the crystal diameter; shoulder-releasing length Measuring device, used to obtain the shoulder-shoulder length at different stages of the shoulder-shoulder process, and calculate the change value of the shoulder-shoulder length; a comparison module is used to compare the change value of the crystal diameter with the shoulder-shoulder length The ratio of the change value is compared with the ratio of the setting value of the change value of the crystal diameter and the setting value of the change value of the shoulder length to obtain a difference; a PID control module is used to use the difference as the The input variable of the PID control module, and the PID algorithm is used to calculate the adjustment value of the crystal growth process parameter as the output variable of the PID control module; the process parameter setting module, the adjustment value of the crystal growth process parameter and The setting values of the crystal growth process parameters are added to obtain the process parameters of the actual crystal growth process.

Further, the crystal growth process parameters of the shoulder-releasing process include crystal pulling speed and/or temperature.

Further, the different stages of the shoulder laying process include different shoulder laying times or different crystal lengths.

The invention also provides a crystal growth control system for shoulder-shouldering process, including a memory, a processor, and a computer program stored on the memory and running on the processor, the processor executing the computer The steps of the above method are implemented in the program.

The invention also provides a computer storage medium on which a computer program is stored, characterized in that the computer program is executed by a computer to implement the steps of the above method.

In summary, according to the crystal growth control method, device, system and computer storage medium for shoulder-shouldering process of the present invention, the PID algorithm is used to control and adjust the diameter change of the shoulder-shoulder process, and fine-tuning the crystal growth process parameter control The diameter change of the crystal in the shoulder-shouldering process overcomes the influence of the slight changes in the thermal field on the shoulder-shouldering process, making the shape of the crystal grown each time and the shape of the shoulder-shoulder highly repeatable. The repeatability of the shoulder process and the stability of the process establish the foundation for the stability and repeatability of the entire crystal growth process, so that the quality of the crystals grown each time is consistent, so as to ensure that the diameter and length of the shoulder are changed every time. Consistency, thereby ensuring the stability of the crystal growth quality of different batches.

detailed description

In the following description, a large number of specific details are given in order to provide a more thorough understanding of the present invention. However, it is obvious to those skilled in the art that the present invention can be implemented without one or more of these details. In other examples, in order to avoid confusion with the present invention, some technical features known in the art are not described.

In order to thoroughly understand the present invention, detailed steps will be proposed in the following description, in order to explain the crystal growth control method for shoulder-shouldering process proposed by the present invention. Obviously, the implementation of the present invention is not limited to the specific details familiar to those skilled in the semiconductor field. The preferred embodiments of the present invention are described in detail below. However, in addition to these detailed descriptions, the present invention may have other embodiments.

It should be understood that when the terms "comprising" and/or "including" are used in this specification, it indicates the presence of the described features, wholes, steps, operations, elements, and/or elements, but does not exclude the presence or addition of one or Multiple other features, wholes, steps, operations, elements, elements, and/or combinations thereof.

FIG. 1 shows a schematic diagram of a crystal growth furnace used in the crystal growth control method provided by an embodiment of the present invention. As shown in FIG. 1, the crystal growth furnace is used to grow a silicon single crystal by the Czochralski method, including the furnace The body 101 and the furnace body 101 are provided with a heating device and a lifting device. The heating device includes a quartz crucible 102, a graphite crucible 103, and a heater 104. Among them, the quartz crucible 102 is used to contain silicon material, such as polycrystalline silicon. The silicon material is heated into silicon melt 105 therein. The graphite crucible 103 is wrapped on the outside of the quartz crucible 102 for supporting the quartz crucible 102 during the heating process, and the heater 104 is disposed on the outside of the graphite crucible 103. A heat shield 106 is provided above the quartz crucible 102. The heat shield 106 has an inverted conical screen surrounding the growth area of the silicon single crystal 107, which can block the growth of the heater 104 and the high temperature silicon melt 105. The direct thermal radiation of the crystalline silicon ingot 107 reduces the temperature of the single-crystalline silicon ingot 107. At the same time, the heat shield can also make the downward blowing protective gas be sprayed directly near the growth interface, further enhancing the heat dissipation of the single crystal silicon rod 107. The side wall of the furnace body 101 is also provided with thermal insulation material, such as carbon felt.

The lifting device includes a vertically arranged seed crystal axis 108 and a crucible axis 109. The seed crystal axis 108 is set above the quartz crucible 102, the crucible axis 109 is set at the bottom of the graphite crucible 103, and the bottom of the seed crystal axis 108 is mounted with a clamp The top of the seed crystal is connected to the seed crystal shaft driving device, so that it can slowly pull upward while rotating. A crucible shaft driving device is provided at the bottom of the crucible shaft 109, so that the crucible shaft 109 can drive the crucible to rotate.

When growing a single crystal, first put silicon material in the quartz crucible 102, then close the crystal growth furnace and evacuate, fill the crystal growth furnace with protective gas. Exemplarily, the protective gas is nitrogen, the purity is more than 97%, the pressure is 0.05 Mpa, and the flow rate is 70 L/min. Then, the heater 104 is turned on and heated to a melting temperature above 1420°C, so that the silicon material is completely melted into silicon melt 105 within 20 minutes.

Next, the seed crystal is immersed in the silicon melt 105, and the seed crystal shaft 108 is used to drive the seed crystal to rotate and slowly pull, so that silicon atoms grow into a single crystal silicon rod 107 along the seed crystal. The seed crystal is cut or drilled from a single crystal of silicon with a certain crystal orientation. Commonly used crystal orientations are <100>, <111>, <110>, <511>, etc. The seed crystal is generally a cylinder Or cuboid. The growth process of the single-crystal silicon ingot 107 includes the stages of seeding, shoulder laying, shoulder turning, equal diameter and finishing.

Specifically, the seeding stage is performed first. That is, when the silicon melt 105 stabilizes to a certain temperature, the seed crystal is immersed in the silicon melt, and the seed crystal is raised at a certain pulling speed, so that the silicon atoms grow along the seed crystal into a thin neck of a certain diameter until the thin neck reaches Scheduled length. The main function of the seeding process is to eliminate the dislocation defects caused by thermal shock caused by the formation of single crystal silicon. The supercooling degree of the crystallization front is used to drive the silicon atoms to be arranged in order on the silicon solid at the solid-liquid interface to form a single crystal. Silicon. Exemplarily, the pulling speed is 1.5 mm/min-2.5 mm/min, the length of the narrow neck is 1.2-1.4 times the diameter of the ingot, and the diameter of the narrow neck is 5-7 mm.

Then, enter the shoulder-releasing stage, when the neck reaches a predetermined length, slow down the speed of pulling up the seed crystal, and at the same time slightly lower the temperature of the silicon melt, the temperature reduction is to promote the lateral growth of the single crystal silicon, Even if the diameter of the single crystal silicon is increased, this process is called the shoulder-releasing stage. As shown in FIG. 2, the tapered ingot formed at this stage is the shoulder-releasing segment of the ingot.

Then, enter the shoulder turning stage. When the diameter of the single crystal silicon is increased to the target diameter, the heating power of the heater 104 is increased to increase the temperature of the silicon melt, and at the same time, the speed of the seed crystal pulling up, the speed of rotation and the speed of rotation of the quartz crucible are adjusted In this way, the lateral growth of the single crystal silicon is suppressed, and the vertical growth thereof is promoted, so that the single crystal silicon grows to have almost equal diameter.

Then, enter the equal diameter stage. When the diameter of the single crystal silicon ingot reaches a predetermined value, it enters the equal diameter stage. As shown in Figure 2, the cylindrical ingot formed at this stage is the equal diameter segment of the ingot. Specifically, the temperature of the crucible, the pulling speed of the crystal, the rotating speed of the crucible and the rotating speed of the crystal are adjusted to stabilize the growth rate and keep the diameter of the crystal unchanged until the pulling of the crystal is completed. The process of equal diameter is the main stage of the growth of single crystal silicon, with the growth of tens of hours or even more than 100 hours.

Finally, enter the closing stage. When finishing, speed up the lifting rate, and at the same time increase the temperature of the silicon melt 105, so that the diameter of the ingot gradually becomes smaller, forming a conical shape, when the cone tip is small enough, it will eventually leave the liquid surface. The finished crystal rod is lifted to the upper furnace chamber to cool down for a period of time and taken out, that is, a growth cycle is completed.

Among the several stages of the single crystal silicon growth process, the shoulder-releasing stage is the more critical process in the growth process and the basis for obtaining crystals of the target diameter. At present, the main method adopted is the method of combining the speed of pulling down the crystal and the temperature to make the crystal diameter continuously increase to reach the target diameter. In the shoulder-shouldering process, the start time of the shoulder-shouldering or the length of the shoulder-shouldering is mainly used to determine the change of the pulling speed and temperature. Therefore, the pulling speed and temperature of different stages need to be matched during the shoulder-shoulding process. However, in the actual crystal growth process, there are some differences in the thermal field use time, seeding temperature, heater life, etc. each time the crystal grows, so if the temperature and crystal pulling speed settings cannot be adjusted in time, the crystal will be lost during the shoulder-shoulder process structure. In addition, changes in different crystal growth conditions will also lead to different shoulder-shouldering processes, resulting in shoulder-shouldering becoming the most difficult part of the growth process of the crystal-growth process. It takes many attempts to find the appropriate temperature and crystal-pulling speed settings. At the same time, it is also the most difficult part of the crystal growth process. It is very difficult to achieve uniformity every time you put your shoulders down.

In view of the above problems, the present invention proposes a crystal growth control method for shoulder-shouldering process, as shown in Figure 3, which includes the following main steps:

In step S301, the setting value of the change value of the crystal diameter at different stages of the shoulder-releasing process, the setting value of the change value of the length of the shoulder-releasing process, and the setting value of the crystal growth process parameters at different stages of the shoulder-releasing process are preset;

In step S302, the crystal diameters at different stages of the shoulder laying process are obtained, and the change value of the crystal diameters is calculated;

In step S303, the length of the shoulder-shouldering at different stages of the shoulder-shouldering process is obtained, and the change value of the length of the shoulder-shouldering is calculated;

In step S304, the ratio of the change value of the crystal diameter and the change value of the shoulder-shoulder length is compared with the ratio of the setting value of the change value of the crystal diameter and the set value of the shoulder-shoulder length change, Get the difference, and use the difference as the input variable of PID (Proportional Integrative Derivative; proportional calculus) algorithm;

In step S305, the PID algorithm is used to calculate the adjustment value of the crystal growth process parameters as the output variable of the PID algorithm;

In step S306, the adjustment value of the crystal growth process parameter and the set value of the crystal growth process parameter are added to obtain the process parameter of the actual crystal growth process, so as to ensure that each time the diameter of the shoulder-shoulder and the length of the shoulder-shoulder change Consistency, thereby ensuring the stability of the crystal growth quality of different batches.

Exemplarily, the crystal growth control method according to an embodiment of the present invention may be implemented in a device, device, or system having a memory and a processor.

Wherein, the crystal growth process parameters of the shoulder laying process include crystal pulling speed and/or temperature.

Further, different stages of the shoulder-releasing process include different shoulder-relaxing times or different crystal lengths.

Specifically, in step S301, the setting value of the change value of the crystal diameter at different shoulder-releasing times or different crystal lengths, the setting value of the change value of the shoulder-releasing length, the setting value of the pulling speed and/or The set value of temperature.

In step S302, the crystal diameter at different shoulder-releasing times or different crystal lengths in the shoulder-relaxing process is obtained, and the change value of the crystal diameter is calculated.

In the present invention, a diameter measuring device is used to obtain the crystal diameter at different shoulder-releasing times or different crystal lengths in the shoulder-relaxing process. A CCD (Charge coupled Device) camera can be used to collect the image of the three-phase junction between the single crystal silicon rod 107 and the silicon melt 105 in the crystal growth furnace, and then use the computer to process the image to obtain a single The diameter of the crystal silicon rod 107 is fed back to the control system to control the crystal growth. Specifically, during the crystal growth process, a bright ring is generated at the solid-liquid interface between the single crystal silicon ingot 107 and the silicon melt 105 due to the release of latent heat. The CCD camera acquires the image signal of the bright ring, and transmits the signal to the computer system after analog-to-digital conversion. The image processing program in the computer system processes the single crystal growth image to obtain the single crystal silicon rod 107 Measured diameter. As an example, the method for obtaining the measured diameter of the single crystal silicon ingot 107 according to the image signal obtained by the CCD camera includes: an image processing program to extract the bright ring at the solid-liquid interface to obtain the crystal outline; fitting the crystal outline to obtain an ellipse Boundary; correct the elliptical boundary to a circular boundary; take any three primitive points on the circular boundary, and substitute their coordinate values into the circular coordinate formula, compose the equation and solve it, you can calculate the circle center coordinate and the diameter of the crystal size.

In step S303, the shoulder-relaxing lengths at different stages of the shoulder-relaxing process are obtained, and the change value of the shoulder-releasing length is calculated.

In the present invention, a shoulder-releasing length measuring device is used to obtain shoulder-releasing lengths at different stages of the shoulder-releasing process.

In step S304, the ratio of the change value of the crystal diameter and the change value of the shoulder-shoulder length to the set value of the change value of the crystal diameter and the change value of the shoulder-shoulder length is performed Compare, get the difference, and use the difference as the input variable of the PID algorithm.

It should be noted that the change value of the crystal diameter and its setting value (the setting value of the change value of the crystal diameter) and the change value of the shoulder-releasing length and the setting value are the values at the same stage of the shoulder-releasing process, namely The value at the same shoulder-lay time, or the value at the same crystal length.

In step S305, the PID algorithm is used to calculate the adjustment value of the pulling speed and/or the adjustment value of temperature as the output variable of the PID algorithm.

Among them, the PID algorithm is controlled according to the deviation ratio (P), integral (I), and derivative (D). Proportional control can quickly reflect the error, thereby reducing the error, but proportional control cannot eliminate the steady-state error. The increase of the proportional gain causes the system to become unstable; the role of integral control is that as long as there is an error in the system, the integral control function will continue to accumulate , Output control quantity to eliminate the error, so as long as there is enough time, the integral control will be able to completely eliminate the error, but the integral effect is too strong will increase the system overshoot, or even make the system oscillate; differential control can reduce the overshoot , Overcoming oscillations, improving the stability of the system, at the same time speeding up the dynamic response speed of the system, reducing the adjustment time, thereby improving the dynamic performance of the system.

Finally, in step S306, the adjustment value of the pulling speed and the setting value of the pulling speed are added to obtain the pulling speed of the actual crystal growth process; the adjusting value of the temperature and the setting value of the temperature are added to obtain the actual length The temperature of the crystallization process.

Figure 4 shows a schematic diagram of the crystal growth control method for shoulder-shouldering process of the present invention. As shown in Figure 4, the input of the PID algorithm is the ratio of the change value of the crystal diameter to the change value of the shoulder-shoulder length. The difference between the setting value of the change in crystal diameter and the setting value of the change in shoulder length; the output of the PID algorithm is the adjustment value of the pulling speed and the adjustment value of the temperature. The set value of is added to obtain the actual crystal pulling speed, and the adjusted value of temperature is added to the set value of temperature to obtain the actual temperature.

According to the crystal growth control method for shoulder-shouldering process of the present invention, the ratio of the change value of the crystal diameter to the change value of the shoulder-shoulder length to the setting value of the change value of the crystal diameter and the setting value of the shoulder-shoulder length change is performed The difference is used as the input variable of the PID algorithm. The PID algorithm is used to calculate the adjustment value of the crystal growth process parameters. As the output variable of the PID algorithm, the PID algorithm is used to control and adjust the diameter change of the shoulder-shoulder process. Fine-tuning the crystal growth process parameters to control the crystal diameter change in the shoulder-shouldering process, overcoming the influence of the small changes in the thermal field on the shoulder-shouldering process, resulting in high repeatability of the crystal shape and shoulder-shoulder shape each time, ensuring the crystal diameter of the shoulder-shouldering process The change values are consistent, which improves the repeatability and stability of the shoulder-shoulding process, establishes the foundation for the stability and repeatability of the entire crystal growth process, and keeps the quality of the crystals grown every time consistent.

As shown in FIG. 5, the crystal growth control device 500 for shoulder-shouldering process according to an embodiment of the present invention includes a preset module 501, a diameter measuring device 502, a shoulder-shoulder length measuring device 503, a comparison module 504, and PID control Module 505 and process parameter setting module 506.

The preset module 501 is used to preset the setting value of the change value of the crystal diameter at different stages of the shoulder-releasing process, the setting value of the change value of the length of the shoulder-releasing process, and the setting value of the crystal growth process parameter at different stages of the shoulder-releasing process;

The diameter measuring device 502 is used to obtain the crystal diameter at different stages of the shoulder laying process and calculate the change value of the crystal diameter;

Shoulder-shoulder length measuring device 503, which is used to obtain shoulder-shoulder lengths in different stages of the shoulder-shoulder process, and calculate the change value of the shoulder-shoulder length;

The comparison module 504 is used to compare the ratio of the change value of the crystal diameter and the change value of the shoulder-shoulder length to the set value of the change value of the crystal diameter and the change value of the shoulder-shoulder length Compare and get the difference;

The PID control module 505 is used to use the difference as the input variable of the PID control module, and use the PID algorithm to calculate the adjustment value of the crystal growth process parameters as the output variable of the PID control module;

The process parameter setting module 506 adds the adjustment value of the crystal growth process parameter and the set value of the crystal growth process parameter to obtain the process parameter of the actual crystal growth process.

Wherein, the crystal growth process parameters of the shoulder laying process include crystal pulling speed and/or temperature. The pre-setting module 501 pre-sets the setting value of the crystal diameter change value, the setting value of the change value of the shoulder length change, the setting value of the crystal pulling speed and/or the temperature setting at different shoulder placing times or different crystal lengths in the shoulder placing process PID control module 505 uses the difference obtained by the comparison module 504 as the input variable of the PID control module, and uses the PID algorithm to calculate the adjustment value of the pulling speed and/or the temperature The adjusted value is used as the output variable of the PID control module; the process parameter setting module 506 adds the adjusted value of the pulling speed and the set value of the pulling speed to obtain the pulling speed of the actual crystal growth process , The adjusted value of the temperature and the set value of the temperature are added to obtain the actual temperature of the crystal growth process.

Further, different stages of the shoulder-releasing process include different shoulder-relaxing times or different crystal lengths. The change value of the crystal diameter and its set value (the set value of the change value of the crystal diameter) and the change value of the length of the shoulder rest and the setting value are the values at the same stage of the shoulder rest process, that is, at the same shoulder rest The value of time, or the value at the same crystal length.

Exemplarily, the diameter measuring device 502 is a CCD camera. Use the CCD camera to collect the image of the three-phase junction between the single crystal silicon rod 107 and the silicon melt 105 in the crystal growth furnace, and then use the computer to process the image to obtain the diameter of the single crystal silicon rod 107 and feed back The control system controls the crystal growth. Specifically, during the crystal growth process, a bright ring is generated at the solid-liquid interface between the single crystal silicon ingot 107 and the silicon melt 105 due to the release of latent heat. The CCD camera acquires the image signal of the bright ring, and transmits the signal to the computer system after analog-to-digital conversion. The image processing program in the computer system processes the single crystal growth image to obtain the single crystal silicon rod 107 Measured diameter. As an example, the method for obtaining the measured diameter of the single crystal silicon ingot 107 according to the image signal obtained by the CCD camera includes: an image processing program to extract the bright ring at the solid-liquid interface to obtain the crystal outline; fitting the crystal outline to obtain an ellipse Boundary; correct the elliptical boundary to a circular boundary; take any three primitive points on the circular boundary, and substitute their coordinate values into the circular coordinate formula, compose the equation and solve it, you can calculate the circle center coordinate and the diameter of the crystal size

FIG. 6 shows a schematic block diagram of a crystal growth control system 600 for shoulder-shouldering process according to an embodiment of the present invention. The crystal growth control system 600 includes a memory 610 and a processor 620.

The memory 610 stores code for implementing the corresponding steps in the crystal growth control method for the shoulder-releasing process according to an embodiment of the present invention.

The processor 620 is used to run the program code stored in the memory 610 to execute the corresponding steps of the crystal growth control method for the shoulder-shouldering process according to the embodiment of the present invention, and to implement the embodiment according to the present invention The preset module 501, the diameter measuring device 502, the shoulder length measuring device 503, the comparison module 504, the PID control module 505, and the process parameter setting module 506 in the crystal growth control device for the shoulder laying process.

In one embodiment, when the program code is executed by the processor 620, the above-mentioned crystal growth control method for the shoulder-releasing process is executed.

In addition, according to an embodiment of the present invention, there is also provided a storage medium on which program instructions are stored. When the program instructions are executed by a computer or a processor, it is used to carry out the embodiment of the present invention. The corresponding steps of the crystal growth control method of the process, and are used to implement the corresponding modules in the crystal growth control device for the shoulder-shoulder process according to an embodiment of the present invention. The storage medium may include, for example, a storage component of a tablet computer, a hard disk of a personal computer, a read-only memory (ROM), an erasable and programmable read-only memory (EPROM), a portable compact disk read-only memory (CD-ROM), USB memory, or any combination of the above storage media. The computer-readable storage medium may be any combination of one or more computer-readable storage media. For example, one computer-readable storage medium contains computer-readable program code for randomly generating a sequence of action commands. Another computer may The readable storage medium contains computer readable program code for crystal growth control for shoulder-shouldering process.

In one embodiment, when the computer program instructions are executed by a computer, each functional module of the crystal growth control device for the shoulder-shouldering process according to the embodiment of the present invention may be implemented, and/or the embodiment of the present invention may be executed. Of crystal growth control method for shoulder-shouldering process.

In one embodiment, the computer program instructions execute the above crystal growth control method for the shoulder-shoulder process when being run by the computer.

In summary, according to the crystal growth control method, device, system and computer storage medium for shoulder-shouldering process of the present invention, the PID algorithm is used to control and adjust the diameter change of the shoulder-shoulder process, and fine-tuning the crystal growth process parameter control The diameter change of the crystal in the shoulder-shouldering process overcomes the influence of the slight changes in the thermal field on the shoulder-shouldering process, making the shape of the crystal grown each time and the shape of the shoulder-shoulder highly repeatable. The repeatability of the shoulder process and the stability of the process establish the foundation for the stability and repeatability of the entire long crystal process, so that the quality of the crystals grown each time remains consistent.

The present invention has been described using the above-mentioned embodiments, but it should be understood that the above-mentioned embodiments are for illustrative and illustrative purposes only, and are not intended to limit the present invention to the scope of the described embodiments. In addition, those skilled in the art can understand that the present invention is not limited to the above-mentioned embodiments, and more variations and modifications can be made according to the teachings of the present invention, and these variations and modifications fall within the scope of protection claimed by the present invention. Within range. The protection scope of the present invention is defined by the appended claims and their equivalent scope.

101: furnace body 102: Quartz crucible 103: graphite crucible 104: heater 105: Silicon melt 106: Hot screen 107: single crystal silicon ingot 108: Seed axis 109: Crucible shaft S301~S306: The main process flow steps of the crystal growth control method for the shoulder-shoulder process 500: crystal growth control device 501: preset module 502: Diameter measuring device 503: Shoulder length measuring device 504: Compare modules 505: PID control module 506: Process parameter setting module 600: crystal growth control system 610: Memory 620: processor

The following drawings of the present invention are used as a part of the present invention to understand the present invention. The drawings show embodiments of the present invention and their descriptions to explain the principles of the present invention. In the drawings:

Figure 1 shows a schematic diagram of a crystal growth furnace used in the crystal growth control method provided by an embodiment of the present invention;

Figure 2 shows a schematic diagram of a single crystal silicon ingot obtained by the crystal growth control method provided by the embodiment of the present invention;

FIG. 3 shows a main process flow diagram of a crystal growth control method for a shoulder-shuffling process according to an embodiment of the present invention;

FIG. 4 shows a schematic diagram of a crystal growth control method for a shoulder-releasing process according to an embodiment of the present invention;

FIG. 5 shows a schematic block diagram of a crystal growth control device for a shoulder-releasing process according to an embodiment of the present invention;

FIG. 6 shows a schematic block diagram of a crystal growth control system used in a shoulder-releasing process according to an embodiment of the present invention.

no.

S301, S302, S303, S304, S305, S306: steps

Claims (10)

A crystal growth control method for shoulder-shouldering process includes the following steps: Pre-set the setting value of the change value of the crystal diameter in different stages of the shoulder-releasing process, the setting value of the change value of the length of the shoulder-releasing process, and the setting value of the crystal growth process parameters in the different stages of the shoulder-releasing process; Obtain the crystal diameter at different stages of the shoulder laying process, and calculate the change value of the crystal diameter; Obtain the shoulder length at different stages of the shoulder rest process, and calculate the change in the shoulder length Comparing the ratio of the change value of the crystal diameter and the change value of the shoulder-shoulder length to the ratio of the setting value of the crystal diameter change value and the shoulder-shoulder length change value to obtain a difference, and Use the difference as an input variable of the PID algorithm; Use PID algorithm to calculate the adjustment value of crystal growth process parameters as the output variable of PID algorithm; The adjustment value of the crystal growth process parameter and the set value of the crystal growth process parameter are added to obtain the process parameter of the actual crystal growth process. The method according to claim 1, wherein the crystal growth process parameters of the shoulder-releasing process include crystal pulling speed and/or temperature. The method according to claim 1, wherein different stages of the shoulder-releasing process include different shoulder-releasing time or different crystal lengths. The method according to claim 1, wherein the crystal diameters at different stages of the shoulder-releasing process are obtained using a diameter measuring device. The method according to claim 1, wherein the shoulder-releasing lengths at different stages of the shoulder-relaxing process are obtained using a shoulder-releasing length measuring device. A crystal growth control device for shoulder-shouldering process, including: A preset module, which is used to preset the setting value of the change value of the crystal diameter at different stages of the shoulder-releasing process, the setting value of the change value of the length of the shoulder-releasing process, and the setting value of the crystal growth process parameter at different stages of the shoulder-releasing process; A diameter measuring device, used to obtain the crystal diameter at different stages of the shoulder laying process and calculate the change value of the crystal diameter; A shoulder-shoulder length measuring device, which is used to obtain shoulder-shoulder lengths in different stages of the shoulder-shoulder process, and calculate the change value of the shoulder-shoulder length; A comparison module for comparing the ratio of the change value of the crystal diameter and the change value of the shoulder-shoulder length to the setting value of the change value of the crystal diameter and the change value of the shoulder-shoulder length Compare to get the difference; The PID control module is used to use the difference as the input variable of the PID control module, and use the PID algorithm to calculate the adjustment value of the crystal growth process parameters as the output variable of the PID control module; The process parameter setting module adds the adjustment value of the crystal growth process parameter and the set value of the crystal growth process parameter to obtain the process parameter of the actual crystal growth process. The crystal growth control device according to claim 6, wherein the crystal growth process parameters of the shoulder-releasing process include a crystal pulling speed and/or temperature. The crystal growth control device according to claim 6, wherein different stages of the shoulder-releasing process include different shoulder-releasing time or different crystal lengths. A crystal growth control system for shoulder-shouldering process, including a memory, a processor, and a computer program stored on the memory and running on the processor, wherein the processor is implemented when the computer program is executed The method steps of any one of claims 1 to 5. A computer storage medium on which a computer program is stored, wherein when the computer program is executed by a computer, the steps of the method described in any one of request items 1 to 5 are realized.

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